KR20150095309A

KR20150095309A - Plasma chemical vapor apparatus

Info

Publication number: KR20150095309A
Application number: KR1020140016462A
Authority: KR
Inventors: 안경준; 권오대
Original assignee: (주)에스엔텍
Priority date: 2014-02-13
Filing date: 2014-02-13
Publication date: 2015-08-21

Abstract

The present invention relates to a plasma chemical vapor device, capable of performing a plasma chemical vapor process on a side of a base material. The device includes a vacuum chamber; a loading part loading the base material in the vacuum chamber; at least one hollow electrode placed on at least one side of the base material; at least one magnetic field generating member continuously reciprocating in a preset angle range around a shaft line of the electrode; a power supply part supplying power to the electrode; a vacuum control part controlling a vacuum degree of the vacuum chamber; and a gas supply part supplying process gas into the vacuum chamber. Therefore, the plasma chemical vapor device is capable of performing a high quality plasma chemical vapor process on the entire area of the base material at a high speed.

Description

[0001] PLASMA CHEMICAL VAPOR APPARATUS [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma chemical vapor deposition apparatus, and more particularly, to a plasma chemical vapor deposition apparatus capable of performing a uniform high-quality plasma chemical vapor deposition process over the entire surface of a substrate at a high speed.

There are physical vapor deposition (PVD) methods such as vacuum deposition and sputtering, chemical vapor deposition (CVD), and the like as techniques for forming a thin film on a substrate in a semiconductor, a display, a solar cell,

Among these, plasma chemical vapor deposition apparatus based on chemical vapor deposition (CVD) is a method of performing a series of plasma chemical vapor processing processes such as film deposition, etching, surface treatment, etc. on the substrate surface by decomposing process gas by plasma As the process speed and process quality are superior to those using PVD method, they are widely used.

As an example of such a conventional plasma chemical vapor deposition apparatus 101, an apparatus used in a film formation process is disclosed in Japanese Patent Application Laid-Open No. 2006-283119 (hereinafter referred to as "prior patent").

As shown in FIG. 1, the prior art discloses a structure for densifying plasma on the surface of a substrate S positioned inside a vacuum chamber 110, and includes an electrode 120 including a magnet 130 therein And a substrate S is disposed under the substrate S. When a power is supplied to the electrode 120, a magnetic field is formed from the magnet 130. When a gas is supplied into the vacuum chamber 110, a magnetic field formed by the magnet 130 densifies the plasma in the film deposition region, Raw material particles of gas decomposed on the surface of the substrate S are formed.

Here, the electrode 120 has a circular cross-section and is continuously rotated in one direction, thereby minimizing the accumulation of the raw material particles due to the gas decomposition on the electrode 120 in addition to the substrate. The magnet 130 inside the electrode 120 is arranged to face the substrate S during the chemical vapor processing, and the plasma is concentrated to the substrate S side.

However, in such a conventional plasma chemical vapor deposition apparatus, since the process proceeds in a state in which the magnet faces the substrate, a chemical vapor phase treatment is performed on the surface of the substrate in the plasma densified region corresponding to the direction of the magnet and in the region between the both electrodes, There is a difference in quality. This is a problem in that when the plasma chemical vapor deposition process is a film deposition and etching process, the film thickness of the substrate surface and the thickness and density of the etching pattern are uneven, and the surface treatment region is uneven in the surface treatment. This problem is more noticeable in large-sized substrates.

In order to solve this problem, it is possible to carry out the process while transferring the substrate. In order to perform a uniform high-quality plasma chemical vapor deposition process over the entire surface of the substrate, the transfer speed of the substrate must be slowed, .

Accordingly, it is an object of the present invention to provide a plasma chemical vapor deposition apparatus capable of performing a high-quality plasma chemical vapor deposition process uniform over the entire surface of a substrate at a high speed.

This object is achieved according to the present invention by a plasma chemical vapor deposition apparatus for performing a plasma chemical vapor deposition process on at least one surface of a substrate, the plasma chemical vapor deposition apparatus comprising: a vacuum chamber; At least one hollow electrode disposed on at least one side of the substrate; At least one magnetic field generating member provided inside the electrode to generate a magnetic field outside the electrode; A loading section for supporting the base material in a reciprocating manner in both directions orthogonal to the axis of the electrode; A power supply for supplying power to the electrode; A vacuum controller for controlling a degree of vacuum in the vacuum chamber; And a gas supply unit for supplying a process gas into the vacuum chamber.

Here, the electrodes are provided in a plurality of mutually spaced intervals along the longitudinal direction of the substrate, and the stacking unit is preferably reciprocated by at least a section corresponding to the spacing distance between the electrodes.

It is effective that the loading section supports the substrate in contact or non-contact manner.

In addition, the stacking portion may support the substrate in a reciprocating manner to a position spaced apart from a position where the substrate approaches the electrode.

At this time, it is preferable that a heating means or a cooling means is provided on the side of the loading portion or the surface of the base material to be processed.

Meanwhile, the electrode may be a circular hollow body or a polygonal hollow body.

Here, the electrode may rotate non-rotatably or continuously about the axis, or may rotate by a predetermined angle at regular intervals.

The size of the electrodes may be the same or at least one of them may have a different diameter from the other electrodes.

The electrode has an inner tube provided with a hollow body and an outer tube surrounding the inner tube with a heat exchange fluid receiving space therebetween; The magnetic field generating member is preferably accommodated in the inner tube.

It is more effective that the magnetic field generating member continuously reciprocates in a predetermined angular range about the axis of the electrode during the process.

On the other hand, the electrode may have a larger diameter on both sides in the longitudinal direction than the remaining central region.

And the process gas may be a deposition gas or an etching gas or a surface treatment gas.

According to the present invention, there is provided a plasma chemical vapor deposition apparatus capable of performing a high-quality plasma chemical vapor deposition process uniform over the entire surface of a substrate at a high speed.

1 is a schematic view of a conventional plasma chemical vapor deposition apparatus,
2 is a schematic diagram of a plasma chemical vapor deposition apparatus according to an embodiment of the present invention,
3 to 6 are schematic views of essential parts of a plasma chemical vapor deposition apparatus according to another embodiment of the present invention,
7 to 10 are views showing various forms of electrodes used in a plasma chemical vapor deposition apparatus according to the present invention.

2 to 6, the plasma chemical vapor deposition apparatus 1 according to the present invention includes a vacuum chamber 10 for forming a vacuum space, a vacuum controller 10 for controlling the degree of vacuum inside the vacuum chamber 10, A gas supply unit 40 for supplying a process gas into the vacuum chamber 10 and an electrode unit 50 for densifying the plasma to an adjacent region of the substrate S loaded on the mounting unit 20 A power supply unit 60 for applying power to the electrode unit 50 and a loading unit 20 for loading the base material S in the vacuum chamber 10. [

The vacuum chamber 10 can be manufactured to have a suitable vacuum space by using a plate-shaped member such as a metal or alloy excellent in internal pressure and heat resistance, and a frame. A shield cover (not shown) may be provided in one region of the vacuum chamber 10 to define a region other than the process performing region. Here, the shielding cover (not shown) as a region between at least a part of the outer circumferential surface of the electrode 51 and the surface of the substrate S, which will be described later, can divide the region other than the process performing region into various shapes And the configuration of the shield cover (not shown) may be omitted in some cases.

The vacuum regulator 30 may include a vacuum pump, a valve, or the like, connected in various forms, as in a conventional plasma chemical vapor deposition apparatus. A high vacuum pump 33, a plurality of valves 35, and a pressure control valve 35 so that the vacuum exhaust can be performed from a low vacuum to a high vacuum in the process of controlling the degree of vacuum in the vacuum chamber 10. [ A valve 37, a high vacuum valve 39, and the like. The degree of vacuum in the vacuum chamber 10 by the vacuum controller 30 can be variously adjusted according to the conditions of the film forming process.

The gas supply unit 40 includes a gas supply source 41 for supplying the process gas into the vacuum chamber 10, a gas supply channel (not shown) extending from the gas supply source 41 into the vacuum chamber 10, A gas flow controller 45 and a vacuum gauge 47 and a valve 48 may be provided as a gas supply regulator 43 for opening and closing a gas supply passage (not shown).

Here, the gas supply passage (not shown) may extend from the gas supply source 41 to the inside of the vacuum chamber 10. For example, the gas supply passage may be a region adjacent to the surface to be processed of the substrate S, Or other desirable regions. And a nozzle 49 for spraying the gas may be provided in the gas supply passage extending to the area.

Here, in the case where the plasma chemical vapor deposition apparatus 1 according to the present invention is a film forming apparatus for performing a film forming process, the film forming gas may be at least one selected from the group consisting of HMDSO, TEOS, SiH ₄ , dimethylsilane, trimethylsilane, , HMDS, TMOS, etc., and may be C-containing methane, ethane, ethylene, acetylene, and the like. In addition, various raw material gases can be appropriately selected depending on the type of the film including titanium tetrachloride containing Ti and the like. As the reaction gas, oxygen, ozone, or nitrous oxide may be used for oxide formation, and nitrogen, ammonia, or the like may be appropriately selected for forming the nitride depending on the kind of the film. As the auxiliary gas, Ar, He, H _2, or the like can be selectively used, and various auxiliary gases can be selectively used depending on the kind of the deposition. The deposition gas suitable for the deposition process to be performed is not limited.

Alternatively, in the case where the plasma chemical vapor deposition apparatus 1 according to the present invention is an etching apparatus for performing an etching process, the etching gas as a process gas may be changed depending on a material of the substrate S to be etched and a thin film formed on the substrate S Lt; / RTI > For example, the etching gas may include Cl-based gases such as Cl2 and BCl3, and F-based gases such as CF4, SF6, and NF3. In addition, various etching gases such as HF, hfacH, XeF2, Acetone, NH3, and CH4 may be selected. That is, the etching gas suitable for the etching process to be performed is not limited. In the case of the etching process, a mask corresponding to the etching pattern may be included on the surface of the substrate S.

Alternatively, when the plasma chemical vapor deposition apparatus 1 according to the present invention is a surface treatment apparatus for performing the surface treatment process, various process gases may be used in the application for changing the surface characteristics of the substrate S as the process gas. For example, the gases for the pre-treatment use can be gases such as Ar, H2, O2, N2, He, CF4, NF3 and the like, and gases such as Ar, O2 and CF4 can be used for the ashing gas. The process gas suitable for the surface treatment process to be performed is not limited.

The electrode unit 50 has a hollow electrode 51 and a magnetic field generating member 55 provided inside the electrode 51 and generating a magnetic field on the substrate side outside the electrode 51. The electrode unit 50 may be provided as a single electrode unit 50. The electrode unit 50 may be provided in the vacuum chamber 10 so that the longitudinal direction of the substrate corresponding to one direction of the loading unit 20 The electrode unit 50 may be provided with at least one pair of electrode units 50 spaced apart from each other or may be provided with a plurality of electrode units 50 corresponding to the large-sized substrate S as shown in FIGS. These electrode units 50 may be fixed on the same horizontal line, and at least one of the electrode units 50 may be provided so as to approach the substrate S side or reciprocate in the original direction depending on the case.

The electrode 51 may be provided so as to be continuously rotated by driving means (not shown), or rotated by a predetermined angle at regular intervals. Or the electrode 51 may be installed in a fixed form. At this time, it is preferable that the electrode 51 is cylindrical hollow as shown in FIG. As shown in Fig. 8, the electrode 51 may have a polygonal hollow body shape.

The shape in which the electrode 51 is continuously rotated can minimize the accumulation of deposits generated during the process on the surface of the cylindrical electrode 51, thereby increasing the cleaning and replacement cycle of the electrode 51.

When the electrode 51 has a cylindrical or polygonal shape in which the electrodes 51 are rotated by a predetermined angle at regular intervals, the outer surface of the electrode 51 is partially faced to the substrate, When the sediments are piled up, the other outer surface is used to perform the process, so that the cleaning and replacement cycle of the electrode 51 can be increased.

Such an electrode 51 may be made of a metal material having excellent plasma resistance, excellent heat resistance, cooling efficiency, and thermal conductivity and being excellent in workability as a nonmagnetic material. Specifically, aluminum, iron, copper, stainless steel, magnesium, MO , Ti, or the like. The cooling fluid or the heating fluid may be perfused as the heat exchange fluid in each electrode 51.

In addition, the diameter of each electrode 51 can be variously changed according to the conditions such as the area and the type of the substrate S, and the diameter thereof is appropriately selected from 100 mm to 2000 mm, .

At this time, the plurality of electrodes 51 may all have the same diameter, or at least some may have different diameters. It is possible to increase the diameter of the electrode 51 of the electrode unit 50 positioned corresponding to the end of the base material S placed on the mounting portion 20 to be larger than the diameter of the other electrode 51, A stable process can be performed in the end region of the substrate S and its edge region.

In addition, as shown in FIG. 10, the electrode 51 may have a larger diameter than the remaining central region 51a. The widthwise both end regions of the substrate corresponding to the longitudinal direction of the electrode 51 and the edge regions thereof are vulnerable to the process.

9, the electrode 51 may be provided as a single hollow tube. However, as shown in FIG. 9, the electrode 51 and the inner tube 52 are surrounded by the inner tube 52 and the heat exchange fluid receiving space 54, May be a structure having an outer tube (53). At this time, the magnetic field generating member 55 is accommodated in the inner tube 52. This makes it possible to protect the magnetic field generating member 55 from the fluid by providing the electrode 51 in the form of a double pipe to partition the region where the magnetic field generating member 55 is accommodated and the region where the heat exchanging fluid is circulated and received. Here, the heat exchange fluid may be selected from either cooling water or heating water depending on the process conditions.

The magnetic field generating member 55 is provided inside the electrode 51 with a length corresponding to the length of the electrode 51 and is disposed in a track shape around the center magnet 56 and the center magnet 56 And has an outer magnet 57. The structure of such a magnet is a structure for generating a plasma track in the form of a race track on the outer surface of the electrode 51 facing the substrate S. The polarity of the center magnet 56 and the outer magnet 57, ) Of the magnetic field generating member 55 may have various polarity arrangements.

Here, the magnetic field generating member 55 may be provided as a single magnetic field generating member 55 having a central magnet 56 and an outer magnet 57, and may generate a plurality of magnetic fields Member 55 as shown in FIG.

Further, the magnetic field generating member 55 may continuously reciprocate the predetermined angle range around the axis of the electrode 51 during the process. The continuous rotation of the magnetic field generating member 55 includes a rotation shaft 58 provided at the center of the electrode 51 and a rotation support member for supporting the magnetic field generating member 55 on the rotation shaft 58, And the rotary shaft 58 is reciprocally rotated in a predetermined angle range. In this case, the drive motor (not shown) may also be used to rotate the electrode 51 in addition to the continuous rotation of the magnetic field generating member 55, including a clutch (not shown).

The continuous rotation of the magnetic field generating member 55 during the process continuously changes the direction of the plasma from the base material surface area opposed to the electrode 51 to the base material surface area that is not opposed to the electrode 51, So that the plasma is concentrated. As a result, a high-quality plasma chemical vapor deposition process can be performed at high speed over the entire surface of the substrate.

The power supply unit 60 may supply a high frequency AC power source as a power source for generating plasma to the electrode unit 50 to be described later.

Here, in order to form a high-density plasma, a high frequency AC power source can use an HF (High Frequency: AC power of 3 to 30 MHz) or a VHF (Very High Frequency: AC power of 30 to 300 MHz) The polarity can selectively connect the positive electrode (+) or the negative electrode (-) to the electrode unit (50) in consideration of the plasma and the process quality.

On the other hand, the mounting portion 20 is provided in a region adjacent to the electrode unit 50, and may be provided on one side of the electrode unit 50 when the substrate to be processed has one surface, The loading unit 20 can be positioned in such a manner that the electrode unit 50 is provided on both sides of the loading unit 20. [ In the case of FIGS. 2 to 6 shown in one embodiment, the loading unit 20 is provided below the electrode unit 50.

The loading section 20 includes a loading table 21 on which the substrate S is loaded and a heating means 23 for holding the substrate S loaded on the loading table 21 at a constant temperature in accordance with the type of process and conditions, . &Lt; / RTI >

3, the stage 21 includes a reciprocating stage 25 that reciprocates the substrate S in both directions of the stage 21 to perform a process while reciprocating the substrate S . When the substrate S is reciprocally moved, the plasma is repeatedly concentrated in the region corresponding to the electrode unit 50 and in the region corresponding to the gap between the electrode units 50, and the magnetic field generating member 55, Is continuously reciprocated in a predetermined angular range, it is possible to perform a high-quality plasma chemical vapor processing process uniformly over the entire surface of the substrate at a high speed.

At this time, the table 21 may be reciprocated in a contact-type manner such as an electrostatic chuck in a state in which the substrate is brought into close contact with the table surface of the table 21, or the table may be moved in a non-contact manner, Or in a noncontact state with respect to the base plate.

At this time, it is preferable that the loading table 21 is reciprocally moved by at least a section corresponding to the interval between the plurality of electrodes.

4, the stage 21 may be conveyed and supported so as to move the substrate from the supply side of the vacuum chamber 10 to the discharge side in one direction. In this case, the process is performed while the substrate is transferred, and the magnetic field generating member 55 continuously reciprocates in a predetermined angular range, so that a uniform high-quality plasma chemical vapor processing process can be performed at high speed over the entire surface of the substrate.

5, the loading table 21 may be provided so as to be reciprocally movable to a position spaced apart from a position approaching the electrode unit 50 side. This is so that the intensity of the plasma toward the substrate can be adjusted by changing the distance between the substrate and the electrode 51.

The substrate S to be mounted on the mounting portion 20 may be made of various materials such as a glass substrate, a ceramic substrate, a semiconductor substrate, a metal substrate, a plastic substrate or a film, a paper or nonwoven fabric, or a fiber.

The substrate S to be loaded on the loading unit 20 is loaded on the loading table 21 by a separate substrate supplying unit (not shown) and a substrate discharging unit (not shown) And then discharged to the outside.

In the plasma chemical vapor deposition apparatus 1 according to the present invention having such a configuration, a magnetic field is generated on the substrate side outside the electrode 51 during the process, and the loading unit 20 continuously reciprocates the substrate while rotating the plasma, It is possible to perform a high-quality plasma chemical vapor processing process uniformly and uniformly over the entire substrate surface while the plasma is repeatedly densely packed on the surface of the base material facing the electrode 51 and the surface of the base material facing the region between the electrodes 51.

On the other hand, when the substrate is reciprocally moved in both directions orthogonal to the axis of the electrode 51 in the process, and the magnetic field generating member 55 is continuously rotated during the process, a more uniform high-quality The plasma chemical vapor processing process can be performed at a higher speed.

As described above, according to the present invention, a plasma chemical vapor deposition apparatus capable of performing a high-quality plasma chemical vapor deposition process uniform over the entire surface of a substrate can be performed at a high speed.

10: Vacuum chamber 20:
30: Vacuum control unit 40: Gas supply unit
50: electrode unit 51: electrode
55: magnetic field generating member 60: power supply unit

Claims

1. A plasma chemical vapor deposition apparatus for performing a plasma chemical vapor processing process on at least one surface of a substrate,
A vacuum chamber;
At least one hollow electrode disposed on at least one side of the substrate;
At least one magnetic field generating member provided inside the electrode to generate a magnetic field outside the electrode;
A loading section for supporting the base material in a reciprocating manner in both directions orthogonal to the axis of the electrode;
A power supply for supplying power to the electrode;
A vacuum controller for controlling a degree of vacuum in the vacuum chamber;
A gas supply unit for supplying a process gas into the vacuum chamber;
Wherein the plasma chemical vapor deposition apparatus comprises:

The method according to claim 1,
The plurality of electrodes are spaced apart from each other along the longitudinal direction of the substrate,
Wherein the loading part is reciprocated by at least a section corresponding to a separation distance between the electrodes.

3. The method according to claim 1 or 2,
Wherein the loading section supports the substrate in a contact manner or supports the substrate in a non-contact manner.

The method of claim 3,
Wherein the loading portion supports the substrate so as to reciprocate at a position spaced apart from a position where the substrate approaches the electrode.

The method of claim 3,
Wherein a heating means or a cooling means is provided on the side of the mounting portion or the surface of the base material to be processed.

The method of claim 3,
Wherein the electrode is a circular hollow.

The method of claim 3,
Wherein the electrode is a polygonal hollow.

The method of claim 3,
Wherein the electrode rotates non-rotatably or continuously about the axis, or rotates by a predetermined angle every predetermined period.

3. The method of claim 2,
Wherein the electrodes are the same size or at least one of which has a different diameter from the other electrodes.

The method of claim 3,
Said electrode having an inner tube provided as a hollow body and an outer tube surrounding said inner tube with a heat exchange fluid receiving space therebetween;
Wherein the magnetic field generating member is housed inside the inner tube.

The method of claim 3,
Wherein the magnetic field generating member continuously reciprocates in a predetermined angular range about an axis of the electrode during the process.

The method of claim 3,
Wherein the electrode has a larger diameter in both longitudinal side regions than in the remaining central region.

The method of claim 3, wherein
Wherein the process gas is a deposition gas, an etching gas, or a surface treatment gas.