WO2015016453A1 - Procédé de formation de nanostructure par nano-impression - Google Patents

Procédé de formation de nanostructure par nano-impression Download PDF

Info

Publication number
WO2015016453A1
WO2015016453A1 PCT/KR2014/002233 KR2014002233W WO2015016453A1 WO 2015016453 A1 WO2015016453 A1 WO 2015016453A1 KR 2014002233 W KR2014002233 W KR 2014002233W WO 2015016453 A1 WO2015016453 A1 WO 2015016453A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist layer
nanostructure
forming
substrate
mold
Prior art date
Application number
PCT/KR2014/002233
Other languages
English (en)
Korean (ko)
Inventor
위정섭
이태걸
Original Assignee
한국표준과학연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020140026932A external-priority patent/KR20150014352A/ko
Application filed by 한국표준과학연구원 filed Critical 한국표준과학연구원
Publication of WO2015016453A1 publication Critical patent/WO2015016453A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/015—Imprinting
    • B81C2201/0153—Imprinting techniques not provided for in B81C2201/0152

Definitions

  • the present invention relates to a method for forming nanostructures using nanoimprint, and more particularly, to a method of forming fine patterns and nanoparticles that can be easily adjusted in size using a nanoimprint process.
  • Nano-imprint technology is proposed as a technique for forming a fine pattern, and it is possible to pattern a nano-level pattern of 100 nm or less on a substrate.
  • Nanoimprint technology after applying a photocurable resin or a thermosetting resin on a substrate, and presses a mold made of a relatively high strength and containing a nano-sized irregularities on the applied resin layer, and the ultraviolet or heat It refers to a technique of transferring a pattern onto a substrate as if by painting it by adding and curing it.
  • One of the technical problems to be achieved by the technical idea of the present invention is to provide a method for forming a nanostructure using nanoimprint capable of forming nanostructures of various sizes with one mold.
  • a method of forming a nanostructure using nanoimprint includes: sequentially forming first and second resist layers on a substrate; Preparing a mold including a body portion and a nano pattern extending from the body portion and having a changed cross-sectional size; Pressing the mold onto the second resist layer to insert the nanopattern into the second resist layer to form a pattern region to which the nanopattern is transferred; After removing the mold, selectively etching the first resist layer to expose the substrate in the pattern region; And forming a nanostructure on the substrate using the second resist layer as a mask layer.
  • the mold in the forming of the pattern region, may pass through the second resist layer and be inserted into at least a portion of the first resist layer.
  • the mold in the forming of the pattern region, is inserted only into the second resist layer, and after removing the mold, etching the second resist layer to expand the pattern region. It may further include.
  • an undercut may be formed below the second resist layer.
  • the size of the nanostructure is determined by the size of the nanopattern at the interface between the first resist layer and the second resist layer in forming the pattern region to which the nanopattern is transferred. Can be determined.
  • the size of the nanostructure, after the step of selectively etching the first resist layer, the removal of the second resist layer at the interface between the first resist layer and the second resist layer can be determined by the size of the area.
  • the size of the nanostructures can be controlled by the relative thicknesses of the first and second resist layers.
  • the nano-pattern may have a triangular cross section in one direction perpendicular to the body portion.
  • forming the pattern region to which the nanopatterns are transferred may include curing the first and second resist layers using heat or light.
  • the method may further include etching at least a portion of the substrate using the nanostructure.
  • the material forming the nanostructure in the forming of the nanostructure, may be controlled to be deposited on the substrate at an angle with respect to the substrate.
  • the substrate includes a soluble layer formed in an upper region in which the first resist layer is formed, and the method of forming a nanostructure using the nanoimprint includes soluble the soluble layer on which the nanostructure is formed. Invading the solution; And recovering the nanostructures.
  • a method of forming a nanostructure using nanoimprint includes: sequentially forming first and second resist layers on a substrate; Preparing a mold including a nano pattern having a three-dimensional shape in which the cross-sectional area is gradually changed; Pressing the mold onto the second resist layer to transfer the nanopatterns; Selectively etching at least a portion of the exposed first and second resist layers after removing the mold; And forming a nanostructure on the substrate using the second resist layer as a mask layer.
  • a method of forming a nanostructure using nanoimprint that can form nanostructures of various sizes with a single mold by controlling the relative thickness of the resist layer by using a multi-layered resist layer and a nanopattern whose cross-sectional size is changed. Can be.
  • FIGS. 1A to 1F are diagrams of main steps schematically illustrating a method of forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • FIGS. 2A to 2C are diagrams illustrating main steps of a method of forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • FIG 3 is a cross-sectional view illustrating a method of forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • FIGS. 4A to 4C are perspective views schematically illustrating molds that may be used in a method for forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • 5A to 5C are plan views schematically illustrating nanostructures formed by a method for forming nanostructures using nanoimprints according to an embodiment of the present invention.
  • FIG. 6 is an electron micrograph of a mold usable in a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.
  • FIGS. 7A to 7C are schematic views illustrating a method of forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • Embodiments of the present invention may be modified in various other forms, or various embodiments may be combined, and the scope of the present invention is not limited to the embodiments described below.
  • the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.
  • FIGS. 1A to 1F are diagrams of main steps schematically illustrating a method of forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • the steps of sequentially forming the first and second resist layers 112 and 114 on the substrate 100 are performed.
  • the substrate 100 is a layer on which a nanostructure is formed, and may correspond to a substrate of an electronic device or a substrate during electronic device manufacture, according to an embodiment. In some embodiments, when etching the substrate 100 using the nanostructure as a mask, the substrate 100 may correspond to an etching target layer.
  • the substrate 100 may be selected from a conventional semiconductor substrate, such as a silicon substrate, a conductive substrate, or an insulating substrate, depending on the use.
  • the first and second resist layers 112 and 114 may be made of a thermosetting, thermoplastic and / or photocurable material, and may be a polymer resin layer.
  • the first and second resist layers 112 and 114 may be made of different materials, for example, a photoresist material such as polymethyl methacrylate (PMMA).
  • PMMA polymethyl methacrylate
  • the first and second resist layers 112 and 114 may be applied onto the substrate 100 by spin coating, screen printing, spraying, or the like.
  • the first resist layer 112 has a first thickness T1
  • the second resist layer 114 has a second thickness T2
  • the preparing of the mold 120 in which the nanopattern 125 is formed is performed.
  • the mold 120 is a kind of stamp or template for imprinting, and includes a body portion 123 and nano patterns 125 on the body portion 123, and a plurality of nano patterns 125 may be provided.
  • the mold 120 may be made of silica, quartz, silicon (Si), silicon carbide (SiC), a metal, or a polymer material.
  • the mold 120 may be made of PDMS (polydimethylsiloxane), PUA (polyurethane acrylate), or PTFE. (Polytetrafluoroethylene), ETFE (Ethylene Tetrafluoroethylene) or PFA (Perfluoroalkyl acrylate) may include any one.
  • the nano-pattern 125 may have a three-dimensional shape that is gradually reduced in size and cross-sectional area along the direction extending from the body portion 123, in particular, the cross section in the direction perpendicular to the body portion 123 may be triangular.
  • the nano-pattern 125 may have a horn shape, and may have a conical, polygonal, or triangular pillar shape. The shape and arrangement of the nanopattern 125 will be described in detail with reference to FIGS. 4A to 4C below.
  • a step of transferring the nanopattern 125 by pressing the mold 120 onto the first and second resist layers 112 and 114 is performed.
  • the nanopattern 125 is pressed to penetrate through the second resist layer 114 and be inserted into at least a portion of the first resist layer 112.
  • light such as heat and / or UV may be applied to cure the first and second resist layers 112, 114.
  • the shape of the nanopattern 125 may be imprinted on the first and second resist layers 112 and 114.
  • the first and second resist layers 112 and 114 are made of a thermoplastic resin, a process of softening the first and second resist layers 112 and 114 may be additionally performed before pressing the mold 120.
  • the nano pattern 125 may have a first length D1 at the interface between the first resist layer 112 and the second resist layer 114, and the first length D1 may be formed by a subsequent process.
  • the size of the structure can be determined.
  • the mold 120 is removed.
  • the pattern region P to which the nanopattern 125 of the mold 120 is transferred is formed in the first and second resist layers 112 and 114, and the opening is formed in the second resist layer 114 in the pattern region P. Is formed, and part of the first resist layer 112 is exposed.
  • a step of selectively etching the first resist layer 112 is performed.
  • the etching may be performed on the first resist layer 112 exposed in the pattern region P.
  • a dry etching process such as wet etching or reactive ion etching (RIE) may be used.
  • RIE reactive ion etching
  • anisotropic etching can be made. Therefore, an opening may be formed in the first resist layer 112, and an undercut U may be formed under the second resist layer 114.
  • etching may be selectively performed only on the first resist layer 112.
  • an etchant capable of selectively removing only the first resist layer 112 may be used.
  • the etching may be performed such that the etching rate of the first resist layer 112 is greater than that of the second resist layer 114.
  • An opening of the second resist layer 114 at the boundary between the first resist layer 112 and the second resist layer 114 may have a first length D1, which is the first resist layer described above with reference to FIG. 1C. It corresponds to the size of the nano-pattern 125 at the boundary of 112 and the second resist layer 114.
  • the first resist layer 112 may have a second length D2 greater than the first length D1 at the boundary with the second resist layer 114.
  • at least a portion of the substrate 100 may be exposed in the pattern region P, and the exposed region may have a third length D3.
  • the third length D3 may be the same as or similar to the first length D1, but may vary according to the degree of etching of the first resist layer 112, and is not limited to the relative size shown in the drawing.
  • a step of forming the nanostructure 150 on the substrate 100 is performed.
  • the nanostructure 150 may be formed on the substrate 100 exposed in the pattern region P by using the second resist layer 114 as a mask.
  • the nanostructure 150 may be formed by depositing a deposition material on the substrate 100 by moving from the top or one side of the substrate 100 to the substrate 100.
  • the deposition material may be deposited by moving at a predetermined angle with respect to the substrate 100, and may be deposited by moving at a vertical or inclined angle. Therefore, the size D4 of the nanostructure 150 is the first length D1 which is the length of the opening of the second resist layer 114 at the boundary between the first resist layer 112 and the second resist layer 114. May be the same as or similar to).
  • the size D4 of the nanostructure 150 may be smaller than the first length D1, and the position of the nanostructure 150 is also a predetermined length from the bottom of the opening of the second resist layer 114. It may be shifted and formed.
  • the nanostructure 150 may be formed using, for example, physical vapor deposition (PVD), such as sputtering.
  • PVD physical vapor deposition
  • the nanostructure 150 may be made of, for example, metal, but various materials may be used depending on the purpose.
  • a process of removing the remaining first and second resist layers 112 and 114 may be performed, and only the nanostructure 150 may be arranged on the substrate 100.
  • At least a portion of the substrate 100 may be etched using the nanostructure 150 as a mask.
  • FIGS. 2A to 2C are diagrams illustrating main steps of a method of forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • first and second resist layers 112 and 114 sequentially forming the first and second resist layers 112 and 114 on the substrate 100 and the mold 120 having the nanopattern 125 formed thereon. Preparing a step may be performed.
  • the thickness of the second resist layer 114 may be relatively thick.
  • a step of transferring the nanopattern 125 by pressing the mold 120 on the second resist layer 114 is performed.
  • the nano pattern 125 is pressed to be inserted into at least a portion of the second resist layer 114.
  • the mold 120 may be inserted into at least a portion of the second resist layer 114 without passing through the second resist layer 114.
  • light such as heat and / or UV may be applied to cure the first and second resist layers 112, 114.
  • the shape of the nanopattern 125 may be imprinted on the second resist layer 114.
  • the mold 120 may be removed.
  • the pattern region P to which the nanopattern 125 of the mold 120 is transferred may be formed in the second resist layer 114.
  • the etching of the second resist layer 114 may be performed to extend the pattern region P. Referring to FIG. 2C, the etching of the second resist layer 114 may be performed to extend the pattern region P. Referring to FIG. 2C, the etching of the second resist layer 114 may be performed to extend the pattern region P. Referring to FIG. 2C, the etching of the second resist layer 114 may be performed to extend the pattern region P. Referring to FIG.
  • the etching may be performed by a dry etching process, for example, an oxygen plasma may be used.
  • a part of the first resist layer 112 may be etched together with the second resist layer 114.
  • the pattern region P is extended so that the pattern region P may have a first length D1 ′ at the boundary between the first and second resist layers 112 and 114, and the first length D1. ') Can determine the size of the nanostructures formed by subsequent processes.
  • the nanostructure 150 may be formed.
  • the nanostructure 150 may be formed by etching the second resist layer 114 such that the pattern region P is extended.
  • the size of the nanostructure 150 may be determined by the size of the removed region of the second resist layer 114 at the interface between the first and second resist layers 112 and 114.
  • FIG 3 is a cross-sectional view illustrating a method of forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • FIG. 3 a process corresponding to pressing the mold 120 to the first and second resist layers 112 and 114 described above with reference to FIG. 1C is illustrated with respect to three embodiments. It will be described how to control the size of the nanostructure 150.
  • the size of the nanostructure 150 is variously formed from the first diameter to the third diameter C1, C2, C3 using the same mold 120. Can be.
  • the size of the nanostructure 150 may be controlled by the selection of the interface levels L1, L2, L3 of the first and second resist layers 112, 114. As described above, the size of the nanostructure 150 is determined by the size of the opening of the second resist layer 114 formed after the mold 120 is pressed. Accordingly, the interface level L1, L2, L3 may be changed according to the thickness ratio of the first and second resist layers 112 and 114, thereby controlling the size of the nanostructure 150 finally formed. have.
  • the interface between the first and second resist layers 112 and 114 is located at the first level L1, that is, when the thickness of the first resist layer 112 is relatively thin, the thickness is relatively small.
  • the nanostructure 150 having the first diameter C1 may be formed.
  • the boundary surfaces of the first and second resist layers 112 and 114 are positioned at the third level L3, that is, when the thickness of the first resist layer 112 is relatively thick, a relatively large third The nanostructure 150 having the diameter C3 may be formed.
  • the shape of the nanostructure 150 is circular is described as an example, the embodiment of the present invention is not limited thereto, and the size control method may be applied to the nanostructure 150 having various shapes.
  • the interface levels L1, L2, and L3 may be variously changed in addition to the illustrated levels.
  • the nanostructure 150 having a different size depending on the relative thickness of the first and second resist layers 112, 114 do. Therefore, one mold 120 may be utilized for various applications, and it is possible to prevent the hassle of manufacturing a new mold.
  • FIGS. 4A to 4C are perspective views schematically illustrating molds that may be used in a method for forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • 5A to 5C are plan views schematically illustrating nanostructures formed by a method for forming nanostructures using nanoimprints according to an embodiment of the present invention.
  • the mold 120a may include a body portion 123a and a nano pattern 125a on the body portion 123a, and a plurality of nano patterns 125a may be arranged in rows and columns.
  • the nano-pattern 125a has a circular cross section in a plane parallel to the body part 123a, has a triangular shape in a vertical plane, extends upward from the body part 123a, and has a conical shape in which the cross-sectional area is gradually reduced.
  • the formed nanostructure 150a may have a circular pattern.
  • the mold 120b may include a body portion 123b and a nano pattern 125b on the body portion 123b, and a plurality of nano patterns 125b may be arranged in rows and columns.
  • the nano-pattern 125b has a rectangular cross section in a plane parallel to the body part 123b, has a triangular shape in a vertical plane, and extends upward from the body part 123b, and has a square pyramid shape whose cross-sectional area is gradually reduced.
  • the shape of the nano-pattern 125b is not limited thereto, and may be used as the nano-pattern 125b of the present invention as long as it extends upward from the body 123b and has a reduced cross-sectional area.
  • the nanostructure 150b may form a square pattern of the substrate 100.
  • the mold 120c may include a body portion 123c and a nano pattern 125c on the body portion 123c, and a plurality of nano patterns 125c may be arranged in a row.
  • the nanopattern 125c of the present embodiment may have a triangular prism shape extending in one direction, and has a rectangular cross section in a plane parallel to the body portion 123c and a triangular shape in a vertical plane. In addition, it is extended from the body portion 123c and the cross-sectional area may be gradually reduced.
  • the nanostructure 150c may form a line pattern.
  • FIG. 6 is an electron micrograph of a mold usable in a method of forming a nanostructure using a nanoimprint according to an embodiment of the present invention.
  • the mold 120 may be manufactured by electron-beam lithography using, for example, hydrogen silsesquioxane (HSQ) as a resist, but is not limited thereto.
  • HSQ hydrogen silsesquioxane
  • the mold 120 has a conical shape and is arranged in rows and columns at regular intervals. Specifically, the nanopattern 125 is arranged with a pitch of about 100 nm.
  • FIGS. 7A to 7C are schematic views illustrating a method of forming a nanostructure using nanoimprint according to an embodiment of the present invention.
  • the substrate 100a includes a base 101 and a soluble layer 105, unlike in FIG. 1A.
  • the base 101 may be any one of a conventional semiconductor substrate such as a silicon substrate, a conductive substrate, or an insulating substrate.
  • the soluble layer 105 may be a polymer layer, and may be formed of a material that can be dissolved in a predetermined solution in which the base 101 is not dissolved.
  • First and second resist layers 112 and 114 may be sequentially stacked on the substrate 100a.
  • the nanostructure 150 is formed on the substrate 100a by the process described above with reference to FIGS. 1B through 1F.
  • the nanostructure 150 may have, for example, a circular cross section in a plane parallel to the upper surface of the substrate 100a.
  • a step of melting the soluble layer 105 to collect the nanostructure 105 is performed.
  • the substrate 100a on which the nanostructures 150 are formed is invaded to expose the soluble layer 105 exposed between the top and side surfaces of the nanostructures 150. Can be dissolved. Thereby, the nanostructure 105 which is a nanoparticle can be collected.
  • the nanostructure 150 such as nanoparticles can be easily manufactured in large quantities.
  • the nanostructure forming method using the nanoimprint according to the embodiment of the present invention may be used to form nanostructures including micro patterns in electronic devices and substrates included in electronic products.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

Un procédé de formation d'une nanostructure par nano-impression conformément à une réalisation de la présente invention comprend les étapes consistant à : former séquentiellement des première et seconde couches de réserve sur un substrat ; préparer un moule comprenant une partie corps et un nano-motif qui s'étend depuis la partie corps et dont la taille de section transversale varie; former une région de motif, dans laquelle le nano-motif est transféré, par pressage du moule sur la seconde couche de réserve de façon à permettre l'insertion du nano-motif dans la seconde couche de réserve ; retirer le moule et graver sélectivement la première couche de réserve de façon à permettre l'exposition du substrat dans la région de motif ; et former une nanostructure sur le substrat au moyen de la seconde couche de réserve comme couche de masque.
PCT/KR2014/002233 2013-07-29 2014-03-17 Procédé de formation de nanostructure par nano-impression WO2015016453A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20130089339 2013-07-29
KR10-2013-0089339 2013-07-29
KR10-2014-0026932 2014-03-07
KR1020140026932A KR20150014352A (ko) 2013-07-29 2014-03-07 나노 임프린트를 이용한 나노 구조물 형성 방법

Publications (1)

Publication Number Publication Date
WO2015016453A1 true WO2015016453A1 (fr) 2015-02-05

Family

ID=52431950

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2014/002233 WO2015016453A1 (fr) 2013-07-29 2014-03-17 Procédé de formation de nanostructure par nano-impression

Country Status (1)

Country Link
WO (1) WO2015016453A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050065955A (ko) * 2003-12-26 2005-06-30 엘지전자 주식회사 나노 임프린트 리쏘그라피를 이용한 메탈 리프트오프 공정
KR100918850B1 (ko) * 2008-01-25 2009-09-28 고려대학교 산학협력단 나노 임프린트 리소그래피와 리프트 오프 공정을 이용한나노 패턴 형성 방법
KR101022506B1 (ko) * 2008-12-24 2011-03-16 한국기계연구원 쉐도우 증착과 나노전사 프린팅을 이용한 나노임프린트 리소그래피의 패턴전사 방법
KR20110034710A (ko) * 2009-09-29 2011-04-06 광주과학기술원 패턴 형성방법
KR20130012291A (ko) * 2011-07-25 2013-02-04 (재)한국나노기술원 임프린트 리소그래피와 리프트 오프 공정을 이용한 3차원 구조의 정렬된 나노구조체 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050065955A (ko) * 2003-12-26 2005-06-30 엘지전자 주식회사 나노 임프린트 리쏘그라피를 이용한 메탈 리프트오프 공정
KR100918850B1 (ko) * 2008-01-25 2009-09-28 고려대학교 산학협력단 나노 임프린트 리소그래피와 리프트 오프 공정을 이용한나노 패턴 형성 방법
KR101022506B1 (ko) * 2008-12-24 2011-03-16 한국기계연구원 쉐도우 증착과 나노전사 프린팅을 이용한 나노임프린트 리소그래피의 패턴전사 방법
KR20110034710A (ko) * 2009-09-29 2011-04-06 광주과학기술원 패턴 형성방법
KR20130012291A (ko) * 2011-07-25 2013-02-04 (재)한국나노기술원 임프린트 리소그래피와 리프트 오프 공정을 이용한 3차원 구조의 정렬된 나노구조체 및 그 제조방법

Similar Documents

Publication Publication Date Title
WO2011090262A2 (fr) Procédé de lithographie utilisant une évaporation inclinée
KR100508337B1 (ko) 나노미터 수준으로 패턴화된 고분자 박막의 제조 방법
Bao et al. Nanoimprinting over topography and multilayer three-dimensional printing
US8828871B2 (en) Method for forming pattern and mask pattern, and method for manufacturing semiconductor device
US20050159019A1 (en) Method for manufacturing large area stamp for nanoimprint lithography
US20030080471A1 (en) Lithographic method for molding pattern with nanoscale features
US20060127522A1 (en) Lithographic apparatus for molding ultrafine features
KR20100110839A (ko) 자기 정렬
JP2002544373A (ja) 重合体フィルムをパターン化する方法及びその方法の使用
WO2013191341A1 (fr) Procédé de fabrication d'un poinçon pour un appareil de nanolithographie plasmonique, et appareil de nanolithographie plasmonique
KR101022506B1 (ko) 쉐도우 증착과 나노전사 프린팅을 이용한 나노임프린트 리소그래피의 패턴전사 방법
US20070257396A1 (en) Device and method of forming nanoimprinted structures
US6946390B2 (en) Photolithographic production of trenches in a substrate
CN1823412A (zh) 纳米级mosfet晶体管阵列及其制造方法
KR100407602B1 (ko) 디웨팅 현상을 이용한 미세 패턴 형성 방법
CA3014989C (fr) Methode de micro et nano fabrication par retrait de gabarit selectif
KR100930177B1 (ko) 나노 임프린트용 스탬프 제조 방법
KR100918850B1 (ko) 나노 임프린트 리소그래피와 리프트 오프 공정을 이용한나노 패턴 형성 방법
US20100193993A1 (en) Method of making a secondary imprint on an imprinted polymer
WO2015016453A1 (fr) Procédé de formation de nanostructure par nano-impression
KR101448870B1 (ko) 나노/마이크로 하이브리드 구조물 제조방법
US20130042779A1 (en) Stamp, method of manufacturing the same, and imprinting method using the stamp
KR20100025363A (ko) 나노 패턴 제조방법, 마스크 제조방법 및 나노 임프린트 리소그래피 방법
KR20220096324A (ko) 초미세 패턴을 이용한 블록공중합체 정렬 방법
WO2023146042A1 (fr) Procédé pour fabriquer une surface ayant une nano-microstructure hiérarchique à l'aide d'une force capillaire

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14831449

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14831449

Country of ref document: EP

Kind code of ref document: A1