WO2015007507A1 - Module à semi-conducteurs de puissance - Google Patents

Module à semi-conducteurs de puissance Download PDF

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Publication number
WO2015007507A1
WO2015007507A1 PCT/EP2014/063843 EP2014063843W WO2015007507A1 WO 2015007507 A1 WO2015007507 A1 WO 2015007507A1 EP 2014063843 W EP2014063843 W EP 2014063843W WO 2015007507 A1 WO2015007507 A1 WO 2015007507A1
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WO
WIPO (PCT)
Prior art keywords
power semiconductor
circuit board
semiconductor module
frame
housing
Prior art date
Application number
PCT/EP2014/063843
Other languages
English (en)
Inventor
Gontran Pâques
Dominik Trüssel
Klaudio BATINIC
Raffael Schnell
Roman EHRBAR
Original Assignee
Abb Technology Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Technology Ag filed Critical Abb Technology Ag
Publication of WO2015007507A1 publication Critical patent/WO2015007507A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to a power semiconductor module.
  • the present invention particularly relates to a power semiconductor module having an improved resistance against thermo cycling effects and having an improved lifetime.
  • semiconductor modules comprise a baseplate, on which baseplate electrical conductors such as metallizations are provided which serve as location for power semiconductor devices, or chips, respectively. Said Chips are connected to terminals, such as control terminals. Further, additional circuit boards may be provided which are positioned in a distance from the power semiconductor devices and arranged above said power semiconductor devices.
  • the above defined arrangement is generally located in a housing which is filled with an insulating gel, such as silicon gel.
  • Silicon gel is known to expand due to the influence of heat and to
  • silicon gel may have an influence to the components arranged in a housing.
  • US patent US2010/0176505 describes that the printed board within a semiconductor module is transformable between supporting portions in order to cope with said volume expansion of the silicone gel due to thermal expansion.
  • document US 6,272,015 describes a power semiconductor module in which a plurality of power semiconductor dies are fixed to a ceramic based substrate support such as an insulation metal substrate (IMS) and are carried in a main support shell which also supports a printed circuit board (PCB) which carries control circuits for controlling the power semiconductor dies.
  • the PCB is generally supported in a plane above the plane of the IMS. It is further described that wire bonds are made from die to terminals on the printed circuit board which will conduct control signals from control terminal which controls the operation of the power die.
  • a volume above the IMS is further filled with silastic.
  • Document US 6,144,571 discloses a power converter such as an inverter device, and particularly a power converter having a hybrid integrated circuit equipped with power semiconductor elements used in a power unit and control circuit elements used in a control unit.
  • a power converter such as an inverter device, and particularly a power converter having a hybrid integrated circuit equipped with power semiconductor elements used in a power unit and control circuit elements used in a control unit.
  • Such a device comprises a package in which an adhesive sheet with a lead frame and power semiconductor elements are provided. Further, a circuit board is provided being arranged on the package.
  • Document 2012/0320545 A1 describes an intelligent power module and a
  • Such a power module comprises a control circuit board and a power circuit board as well as a body case closed by a lid in order to package the boards. It is further described that such a device is a hybrid power device designed to integrate high speed and low loss IGBTs with dedicated drive circuitry for AC motor control, usually implemented on a printed circuit board.
  • a press fit is provided which is pressed in in suitably metalized holes comprising rivets in order to contact the circuit board, which is provided in a lid.
  • the press fit comprises a body which is connected to at least one power device.
  • circuit board within a power semiconductor module is designed in a way that it can be moved by the thermal extension of the gel.
  • the connection between substrate and circuit board is usually connected by a copper pin with strain relief.
  • the present invention provides a power semiconductor module, comprising a baseplate equipped with metallizations that are electrically isolated towards the baseplate; at least one power semiconductor device being arranged on a metallization; a circuit board with at least one circuit component, the circuit board having a connection area for connecting said at least one circuit component to a metallization, said connection area being connected to the metallization by a bond wire, wherein the circuit board is mounted spaced apart from at least one power semiconductor device; a frame for supporting the circuit board, and a housing for enclosing the power semiconductor module, wherein the housing is filled with an insulating gel, wherein the whole circuit board is immovably fixed to the frame, wherein the frame is formed as a grid.
  • a power semiconductor module like described above may provide a significantly increased resistance against thermocycling effects and may particularly withstand even huge amounts of expansion and contracting cycles of the insulating gel.
  • the power semiconductor module according to the invention is particularly configured
  • a power semiconductor device may be particularly suitable for power electronics which may exemplary and typically refer to applications working with currents of more than approximately 74A and voltages of approximately more than 100V, the before named values being exemplary values only and not limiting.
  • It comprises a baseplate formed from a metal, such as aluminium or tungsten or copper, for example, or from a compound like aluminium silicon-carbide (AlSiC) that is at least partially coated by a metal such as nickel or copper, for example.
  • the baseplate is equipped with metallizations, such as copper metallizations which are positioned on electric insulating areas located on top of the baseplate. Placed on the metallizations may be at last one, preferably a plurality of power semiconductor devices as it is generally known in the art.
  • the power such as aluminium or tungsten or copper, for example, or from a compound like aluminium silicon-carbide (AlSiC) that is at least partially coated by a metal such as nickel or copper, for example.
  • the baseplate is equipped with metallizations, such as copper metallizations which are positioned on electric insulating areas located on top of the baseplate. Placed on the metallizations may be at last one, preferably a plurality of power semiconductor
  • insulated gate bipolar transistors IGBT
  • reverse conductive insulated gate bipolar transistors reverse conducting IGBT
  • bi-mode insulated gate transistors BIGT
  • diodes for example.
  • a collector electrode of the power semiconductor device is electrically connected to the metallization, whereas the emitter electrode of the power semiconductor device may be bonded by bond wires, such as aluminium bond wires, to respective terminals as it is known in the art.
  • a circuit board such as a printed board may be provided, which circuit board may comprise at least one circuit component.
  • the circuit board may act as a control circuit and may correspondingly comprise the respective components of a control circuit.
  • the circuit board may have one or more connection areas such as bond pads which serve as a receiving area for bond wires in order to respectively connect the circuit board, or the circuit components, respectively.
  • At least one circuit component of the circuit board is connected to a
  • a bond wire may be a preferred connection between the circuit board, such as the control circuit, and a metallization.
  • a circuit component according to the present invention may be any part of the circuit board, such as electrical devices, electrical and non-electrical connections, sensors, connectors and the like.
  • the circuit board is mounted spaced apart from at least one power
  • the circuit component is connected to.
  • a housing for enclosing the power semiconductor module is provided.
  • the feature according to which the housing encloses the power semiconductor module shall mean that the housing may be part of the power semiconductor module or may be a separate part.
  • the housing may be filled with an insulating gel such as silicon gel.
  • a frame In order to support the circuit board, a frame is provided.
  • the frame may be part of the housing or it may be connected thereto. However, a connection of the frame and the housing is not strictly required.
  • the circuit board With regard to the circuit board, the whole circuit board is immovably fixed to the frame. This arrangement may provide significant advantages with regard to arrangements of the circuit boards at which the circuit board is movable due to an expansion of the silicon gel.
  • thermally expanded silicon gel is displaced upwardly.
  • the coefficient of thermal expansion of the silicon gel is by far greater than that of any other component.
  • the expansion of the silicon gel is conducted to the circuit board, so that a force acts on the circuit board. According to the prior art, the circuit board may be greatly displaced in answer to this force.
  • Such a displacement of the circuit board may be conveyed to a cover plate of the housing, in answer to which the cover plate may as well be displaced, which leads to a great transformation of the cover plate.
  • a cover plate often is formed from a fragile material such as polyphenylene sulfide (PPS), the latter has a small yield stress and is likely to be broken even by small transformations.
  • PPS polyphenylene sulfide
  • the displacement of the circuit board affects a force to the bond wire connection.
  • the lifetime of this connection is highly affected by such a movement of the circuit board.
  • connections may withstand the force of the expansion of the insulating gel. This securely prevents a force to act to the bond wire connection.
  • the stress on the bonded connection is significantly reduced.
  • the power semiconductor device may withstand even a large amount of even excessive thermocycles. Therefore, the power semiconductor module according to the invention provides a significant increase in lifetime stability. This is especially advantageous taking into consideration that the failure of single modules may under circumstances lead to a serious damage, which, in an extreme case may lead to a complete system failure.
  • the reliability and thus the lifetime of power semiconductor modules may significantly be enhanced. This may further decrease the danger of either required service intervals as well as forced service measures due to a failure. As a result, the operation of the power semiconductor module may be enhanced and may be performed especially cost-saving.
  • the frame is formed as a grid.
  • the frame forms only few resistance against the insulating gel in case it expands.
  • the space inside the housing is not or only little negatively influenced allowing the power semiconductor module to be designed with low dimensions and essentially without restrictions. Further, advantages with respect to weight may be achieved which may be advantageous with respect to mobile applications.
  • a high resistance against thermocycling effects and in particular against expansion and contraction of the insulating gel being located inside the housing may be combined with a bonding connection of the circuit board, or its components, respectively and thus with a cost-saving and highly automatable connection. Cost-intensive measures for providing a defined movability of the circuit board thereby preventing a damage of the cover plate or the electric connection of the circuit board may thus be avoided.
  • the power semiconductor module according to the invention may provide a cost-saving measure for achieving a module being highly resistive against thermocycling effects and thus having an improved lifetime.
  • the circuit board is immovably fixed to the frame by means of at least one punctual fixation.
  • an especially easy and cost-saving fixation measure may be provided.
  • Such a fixation may be especially advantageous due to the fact that it allows a highly automated process.
  • the fixation may be performed independently from the structure of the circuit components due to the fact that the punctual fixations may be realized in dependence of sensitive and less sensitive areas of the circuit board.
  • the fixation may be performed in an especially adaptable manner and is capable of being integrated in any existing power semiconductor module. It is thereby possible to use only one punctual fixation.
  • the punctual fixation is realized by means of a form fit.
  • a form fit may create a secure and reliable fixation, which, on the other hand, may be formed by automated processes and in an easy and cost-saving manner. Further, automated processes often result in faster production methods and further in more reproducible results allowing a higher quality to be reached.
  • Form fit fixations may thereby be formed, for example, by means of ultrasonic waves acting on the respective material and leading to a save and reliable connection. Examples for form fit fixations comprise, inter alia, the provision of rivets.
  • Such fixation means are especially reliable and further applicable under highly automated conditions.
  • the circuit board is immovably fixed to the frame by means of an expanded fixation.
  • An expanded fixation according to the present invention shall particularly mean - in contrast to a punctual fixation - a fixation which is expanded over a defined area and may thus be any area apart from a punctual fixation. Examples for such expanded fixations comprise connections in the form of areas, lines and the like.
  • an especially secure fixation may be provided which may particularly be adapted to the form of the frame.
  • defined or all supporting portions of the frame may serve as fixation areas so that especially according to this embodiment the risk of detaching the circuit board from the frame by means of thermocycling and thus the influence of expanding insulating gel may significantly be reduced.
  • the expanded fixation is formed by means of an adhesive.
  • the fixation may be especially secure due to the fact that the adhesive, like a silicon glue, used may be adapted to the respective materials to be fixed with each other and further to the working conditions of the module.
  • the adhesive like a silicon glue
  • a highly adapted fixation may be provided which, again, is usable in highly automated processes allowing the advantages like described above, particularly with respect to low costs and high quality.
  • at least one circuit component is connected to a metallization by at least two bond wires.
  • this embodiment a kind of redundant connection of the circuit board, or the respective components thereof, respectively, may be achieved.
  • This feature allows a further increase in reliability and thus a decrease in the danger of forced or unforced service times. Due to the fact that bond wires are cost-saving to form, this embodiment allows a significant security improvement with relatively low investments.
  • the frame supports the housing or is part of the housing.
  • the frame may be a part which may be present in the power semiconductor module anyhow because of which only minor adaptions have to be performed. This allows producing the power semiconductor module like described above with only small modifications with regard to the production process.
  • the frame in case the frame is part of the housing or connected thereto, the frame as such is fixed in an especially stable way. This allows that not only the circuit board but also the frame is immovably fixed so that the danger of potential damages due to the expansion and contraction of the insulating gel may be further reduced. Thus, the reliability is further improved and the danger of forced or unforced service times is further decreased.
  • a channel is provided for letting the insulating gel flowing alongside the circuit board.
  • the force acting on the circuit board is significantly reduced so that the requirements regarding the formation of the circuit board may as well be reduced.
  • the circuit board may be formed especially cost-saving.
  • the channels may thereby be provided simply next to the circuit board, so that the insulating gel may flow alongside the circuit board by flowing next to the circuit board in case of an extraction, for example.
  • the channels may be formed in the circuit board, for example by providing through-holes in the board, particularly at less sensitive positions.
  • Fig. 1 shows a schematic view from above of a part of an embodiment of a power semiconductor device
  • FIG. 2 shows a schematic cross-sectional view of the embodiment of figure
  • Fig. 1 shows a schematic view from above of a part 10 of an embodiment of a power semiconductor module.
  • the power semiconductor module according to the invention is particularly suitable for a high-voltage direct current (HVDC) - electric power transmission system or a flexible AC transmission system (FACTS) or for any kind of traction applications.
  • HVDC high-voltage direct current
  • FACTS flexible AC transmission system
  • the power semiconductor module comprises a baseplate formed from a metal, such as aluminium or tungsten, for example, and being equipped with
  • ceramic substrates may be provided on the baseplate.
  • the ceramic substrates may be brazed onto the baseplate or may in another way be located at the surface of the baseplate.
  • the metallizations may then be located on said ceramic substrates, for example. Further, at least one power
  • the power semiconductor devices may be chosen from the group consisting of insulated gate bipolar transistors (IGBT), reverse conductive insulated gate bipolar transistors (reverse conducting IGBT), bi-mode insulated gate transistors (BIGT), and diodes, for example.
  • IGBT insulated gate bipolar transistors
  • BIGT bi-mode insulated gate transistors
  • a collector electrode of the power semiconductor device is electrically connected to the metallization, whereas the emitter electrode of the power semiconductor device may be bonded by bond wires, such as aluminium bond wires, to respective terminals as it is known in the art.
  • a circuit board 12 such as a printed board may be provided, which circuit board 12 may comprise at least one circuit component.
  • the circuit board 12 may act as a control circuit and may correspondingly comprise the respective components of a control circuit.
  • the circuit board 12 may have one or more connection areas such as bond pads which serve as a receiving area for bond wires in order to respectively connect the circuit board 12, or the circuit components, respectively.
  • a housing for enclosing the power semiconductor module may be provided, wherein the housing is filled with an insulating gel, such as particular with silicon gel.
  • a frame 16 is provided.
  • the frame 16 is formed as a grid. Further, the frame 16 may support the housing or may be part of the housing.
  • the whole circuit board is immovably fixed to said frame 16.
  • the whole circuit board 12 is immovably fixed to the frame 16.
  • the fixation area 14 of the circuit board 12 to the frame 16 is schematically illustrated by the dashed line.
  • figure 1 shows an exemplary embodiment at which the circuit board 12 is immovably fixed to the frame 16 by means of an expanded fixation. This expanded fixation may for example be realized by means of an adhesive.
  • the circuit board 12 may be immovably fixed to the frame 16 by means of at least one punctual fixation.
  • a punctual fixation may be realized by means of a form fit.
  • Such a form fit may in an exemplary manner be realized by providing one or preferably a plurality of rivets.
  • the punctual fixations such as the rivets may be located at the shown fixation area in order to securely fix the circuit board 12 to the frame 16.
  • the number of punctual fixations, such as the rivets may be chosen in dependence of the respective application and for example in dependence of the thermocycle properties which are expected.
  • Figure 2 shows a schematic cross-sectional view of the embodiment of figure 1 because of which it is referred to the detailed description of figure 1. It can again be seen that the circuit board 12 is supported by the frame 16, wherein outer portions of the frame 16 as well as supporting portions are shown, the latter acting as fixation area 14.
  • Figure 2 further shows that the circuit board 12, or a circuit component thereof, respectively, is connected to a metallization 20 by means of bond wires 18. It may be provided that at least one circuit component is connected to a

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention concerne un module à semi-conducteurs de puissance comprenant une plaque de base pourvue de métallisations qui sont isolées électriquement du côté de la plaque de base ; au moins un dispositif à semi-conducteurs de puissance disposé sur une métallisation ; une carte de circuit (12) pourvue d'au moins un composant de circuit et comportant une zone de connexion pour connecter au moins un composant de circuit à une métallisation au moyen d'un fil de connexion (18), la carte de circuit (12) étant montée espacée d'au moins un dispositif à semi-conducteurs de puissance ; un cadre (16) pour prendre en charge la carte de circuit, et un logement pour contenir le module à semi-conducteurs de puissance, ce logement étant rempli d'un gel isolant, et au moins la zone de connexion étant fixée définitivement au cadre (16). Ce module à semi-conducteurs de puissance peut créer une résistance considérablement accrue contre des effets de cycle thermique et peut particulièrement résister même à de très grands nombres de cycles d'expansion et de contraction du gel isolant.
PCT/EP2014/063843 2013-07-15 2014-06-30 Module à semi-conducteurs de puissance WO2015007507A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP13176497 2013-07-15
EP13176497.9 2013-07-15

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WO2015007507A1 true WO2015007507A1 (fr) 2015-01-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11502434B2 (en) 2017-06-07 2022-11-15 Hitachi Energy Switzerland Ag Power semiconductor module

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
JP2000068446A (ja) * 1998-08-25 2000-03-03 Hitachi Ltd パワー半導体モジュール
US6144571A (en) 1999-02-22 2000-11-07 Hitachi, Ltd. Semiconductor module, power converter using the same and manufacturing method thereof
US6272015B1 (en) 1997-11-24 2001-08-07 International Rectifier Corp. Power semiconductor module with insulation shell support for plural separate substrates
US20100176505A1 (en) 2006-06-16 2010-07-15 Kazuhiro Oyama Power semiconductor module and fabrication method thereof
US20100225363A1 (en) * 2003-02-14 2010-09-09 Hitachi, Ltd. Integrated Circuit for Driving Semiconductor Device and Power Converter
US20120320545A1 (en) 2011-06-20 2012-12-20 Stmicroelectronics S.R.L. Intelligent power module and related assembling method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
US6272015B1 (en) 1997-11-24 2001-08-07 International Rectifier Corp. Power semiconductor module with insulation shell support for plural separate substrates
JP2000068446A (ja) * 1998-08-25 2000-03-03 Hitachi Ltd パワー半導体モジュール
US6144571A (en) 1999-02-22 2000-11-07 Hitachi, Ltd. Semiconductor module, power converter using the same and manufacturing method thereof
US20100225363A1 (en) * 2003-02-14 2010-09-09 Hitachi, Ltd. Integrated Circuit for Driving Semiconductor Device and Power Converter
US20100176505A1 (en) 2006-06-16 2010-07-15 Kazuhiro Oyama Power semiconductor module and fabrication method thereof
US20120320545A1 (en) 2011-06-20 2012-12-20 Stmicroelectronics S.R.L. Intelligent power module and related assembling method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11502434B2 (en) 2017-06-07 2022-11-15 Hitachi Energy Switzerland Ag Power semiconductor module

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