WO2015005695A1 - Dispositif photovoltaïque - Google Patents

Dispositif photovoltaïque Download PDF

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Publication number
WO2015005695A1
WO2015005695A1 PCT/KR2014/006197 KR2014006197W WO2015005695A1 WO 2015005695 A1 WO2015005695 A1 WO 2015005695A1 KR 2014006197 W KR2014006197 W KR 2014006197W WO 2015005695 A1 WO2015005695 A1 WO 2015005695A1
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Prior art keywords
conductive window
photovoltaic device
cell region
light
bandgap energy
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PCT/KR2014/006197
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English (en)
Korean (ko)
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안상정
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An Sang Jeong
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present disclosure relates generally to photovoltaic devices (PHOTOVOLTAIC DECIVE), and more particularly to photovoltaic devices that improve the problems of conventional glass substrates and / or transmissive conductive oxide films (TCOs).
  • POTOVOLTAIC DECIVE photovoltaic devices
  • TCOs transmissive conductive oxide films
  • the photovoltaic device refers to a device such as a solar cell using a photovoltaic effect.
  • FIG. 1 is a view showing an example of a conventional photovoltaic device, wherein a solar cell composed of a-Si (amorphous silicon) (amorphous silicon) is formed on the upper left side, and a solar cell composed of CdTe is formed on the lower left side.
  • a solar cell composed of a-Si (amorphous silicon) (amorphous silicon) is formed on the upper left side
  • a solar cell composed of CdTe is formed on the lower left side.
  • a cell in which the cell is composed of CuInGaSe 2 (CIGS) on the right side is exemplified.
  • the a-Si solar cell and the CdTe solar cell have a superstrate structure in which light is incident from the substrate 100
  • the CIGS solar cell is a sub-light in which light is incident from the opposite side of the substrate 100. It has a straight structure.
  • the a-Si solar cell is a substrate 100 made of glass, an electrode 200 made of transparent conductive oxide (TCO) such as SnO 2 , a p layer 301 (eg p-SiC), an i-layer as a light absorption region. 302 (eg, ia-Si), n-layer 303 (eg, na-Si), a reflective layer 401, and an electrode 402.
  • TCO transparent conductive oxide
  • the CdTe cell comprises a substrate 100 made of glass, an electrode 200 made of transparent conductive oxide (TCO) such as SnO 2 , an n layer 303 (eg CdS), and a p layer 301 (eg p-CdTe).
  • the CIGS cell comprises a glass substrate 100, an electrode 200 (eg Mo), a p layer 301 (eg p-CuInGaSe 2 ), an n layer 303 (eg n-CdS), a buffer layer 404; For example, ZnO) and the electrode 402.
  • an electrode 200 eg Mo
  • a p layer 301 eg p-CuInGaSe 2
  • an n layer 303 eg n-CdS
  • a buffer layer 404 For example, ZnO
  • FIG. 2 is a diagram illustrating other examples of a conventional photovoltaic device, and includes a plurality of cell regions 310, 320, and 330 in one device (eg, US Patent No. 5,407,491).
  • the cell region 310 located in the upper side, the cell region 320 located in the middle, and the cell region 330 located in the lower side have a large band gap energy from above. It is possible to improve the conversion efficiency of the photovoltaic device.
  • the bandgap energy of various semiconductor materials is as follows (InN: 0.6 eV, Ge: 0.65 eV, Cu (In, Ga) Se 2 : 1.04-1.67 eV, c-Si: 1.12 eV InGaAs: 1.2 eV , InP: 1.35 eV, GaAs: 1.4 eV, CdTe; 1.45 eV, InGaP: 1.86 eV, GaP: 2.25 eV, ZeSe: 2.7 eV, ZnO: 3.37 eV, GaN: 3.4 eV).
  • a photovoltaic device having one cell region or a plurality of cell regions having various band gap energies has been proposed, but a glass substrate is mainly used as the substrate 100.
  • the glass substrate 100 is not suitable for high temperature growth, methods suitable for low temperature growth are mainly used in the manufacture of the thin film solar cell, and there is a limit in achieving high quality of the thin film using high temperature growth. .
  • FIG. 3 is a view showing another example of a conventional photovoltaic device, which includes a substrate 100, an electrode 200, a cell region 300 for converting light into electrical energy, and an electrode 402. Equipped.
  • the rough surface 201 is formed on the electrode 200 (eg, ZnO).
  • the rough surface 201 may be formed during the formation of the electrode 200, or may be formed by surface texturing (eg, wet etching or dry etching) after the formation of the electrode 200. By having a rough surface 200, it is possible to scatter the incident light to increase the amount of light absorption into the device.
  • the cell region 300 is formed on the rough surface 201, there are many constraints (shunting paths, pinholes, local depletion, etc.) to grow a variety of high-quality semiconductor material on the rough surface 201.
  • the electrode 200 In a photovoltaic device with a superstrate structure, the electrode 200 must be conductive, light transmissive, form the base of the cell region 300, and form a high quality rough surface 201. It should be possible.
  • the electrode 200 using the conventional TCO is not easy to satisfy such various requirements, and on the other hand, the substrate 100 made of glass that cannot withstand the high temperature is provided underneath the cell region 300. There are limitations to forming by hot growth techniques.
  • a conductive window having a hexagonal close-packed lattice structure; A conductive window having a rough surface to scatter and having a first bandgap energy; A cell region formed on the conductive window and converting incident light into electrical energy, the cell region having a bandgap energy smaller than the first bandgap energy and having a light absorption region made of a heterogeneous material different from the material constituting the conductive window; And, a photovoltaic device is provided comprising a; a reflective layer for reflecting light incident from the opposite side of the conductive window to the cell region with respect to the cell region.
  • FIG. 1 is a view showing an example of a conventional photovoltaic device
  • FIG. 2 is a view showing other examples of a conventional photovoltaic device
  • FIG. 3 is a view showing still another example of a conventional photovoltaic device
  • FIG. 4 is a diagram illustrating an example of a photovoltaic device according to the present disclosure.
  • FIG. 5 is a photograph showing an example of a rough surface formed on a material having a hexagonal dense lattice structure
  • FIG. 6 illustrates another example of a photovoltaic device according to the present disclosure
  • FIG. 7 and 8 illustrate an example of a method of manufacturing a photovoltaic device according to the present disclosure.
  • the photovoltaic device includes a conductive window 23, a cell region 30, and a reflective layer 41.
  • the conductive window 23 is located on the side where light is incident and has a rough surface 21 that scatters light. Unlike the photovoltaic device shown in FIG. 3, the rough surface 21 is formed outside the device rather than on the cell region 30 side, so that the formation of the rough surface 21 is independent of the formation of the cell region 30. It has the advantage that it can be controlled.
  • the conductive window 23 on which the rough surface 31 is formed is made of a material having a hexagonal dense lattice structure. As shown in FIG.
  • the surface texturing eg, wet etching
  • a material having a hexagonal dense lattice structure eg, GaN, ZnO
  • the N-face GaN, from which the substrate 10 is removed and exposed, is well etched and provides a high quality rough surface 21 as shown.
  • Techniques for surface texturing the conductive window 23, as in FIGS. 3-4, are well known to those skilled in the art.
  • a representative material having a hexagonal dense lattice structure which is represented by a GaN-based compound semiconductor (i.e., Al x Ga y In 1-xy N (0 ⁇ x ⁇ 1,0 ⁇ y ⁇ 1,0 ⁇ x + y ⁇ 1) Group III nitride semiconductors and ZnO-based oxides such as ZnO and MgZnO.
  • a GaN-based compound semiconductor i.e., Al x Ga y In 1-xy N (0 ⁇ x ⁇ 1,0 ⁇ y ⁇ 1,0 ⁇ x + y ⁇ 1)
  • Group III nitride semiconductors and ZnO-based oxides such as ZnO and MgZnO.
  • the substrate 10 may be formed of, for example, sapphire, SiC, Si, Ge, SiGe, GaAs, and the like, and the conductive window 23 is not particularly limited as long as it can be formed, but preferably a material having a high melting point Preferably consisting of sapphire.
  • the cell region 30 is formed on the conductive window 23 and converts light incident through the conductive window 23 into electrical energy.
  • the cell region 30 has a light absorbing region 32, and the light absorbing region 32 is a region in which the conversion into electrical energy of light is actually caused by a photovoltaic effect in the cell region 30.
  • the light absorption region 32 is made of the cell region 30 having an n-layer, i-layer, p-layer, that is, a PIN structure.
  • the depletion region between the p layer and the n layer is used as the light absorption region 32, or a single layer having conductivity different from the conductive window 23 is formed as the cell region 30, thereby conducting It is theoretically possible to use the depletion region between the window 23 and the cell region 30 as the light absorbing region 32.
  • an i layer may be further provided therebetween. That is, the light absorbing region 32 can be made by any method commonly used in the field of photovoltaic devices.
  • the conductive window 23 is made of a material having a bandgap energy greater than that of the light absorbing region 32 so as to prevent incident light from reaching the light absorbing region 32.
  • the light absorption region 32 is formed of Si, Ge, CdTe, CuInGaSe 2 , AlGaInAs, AlGaInP, Group III element- (As, P, N) compounds. Or the like.
  • the reflective layer 41 is formed on the opposite side of the conductive window 23 with respect to the cell region 30, and reflects light incident into the device to the cell region 30.
  • the reflective layer 41 may be made of Ag, Al, Au, Pt, Ni, Mo, Cu, Cr, Ti, TiW, Distributed Bragg Reflector (DBR), Omni-Directional Reflector (ODR), or a combination thereof.
  • DBR Distributed Bragg Reflector
  • ODR Omni-Directional Reflector
  • the electrode 22, the support substrate 40, and the electrode 42 may be further provided, and the support substrate 40 may be bound by the bonding layer 43.
  • the support substrate 40 supports the photovoltaic device after the removal process and the removal of the substrate 10.
  • the bonding layer 43 may be made of Au, Ni, Pd, Pt, Cu, Ti, W, Cr, CrN, TiW, Sn, In, Zn, or a combination thereof.
  • the support substrate 40 may be configured in a rigid form or a flexible form, and may include Sapphire, Si, Refractory Metal (Mo, V, Ti, Cr, etc.), glass, polyimide, and general organic material. And the like.
  • the light absorbing region 30 may be formed by chemical vapor deposition (CVD; for example, MOCVD, ALD, PECVD), and also by physical vapor deposition (PVD; for example, thermal or evaporator, sputtering). Formation is possible.
  • TCO transparent, conducting oxide
  • TCN nitride
  • TCON oxynitride
  • FIG. 6 illustrates another example of a photovoltaic device according to the present disclosure, wherein the photovoltaic device includes two cell regions 30A and 30B. It goes without saying that two or more cell regions can be provided.
  • Reference numeral 35 is a tunnel junction layer.
  • the conductive window 23, the cell region 30A, and the cell region 30B are preferably made of a material having a smaller band gap energy.
  • the conductive window 23 is formed on the substrate 10.
  • a GaN buffer layer is formed at a temperature of about 500 ° C, and then an undoped GaN layer is formed at a temperature of about 1000 ° C, followed by
  • the conductive window 23 may be formed by forming a doped GaN layer.
  • the cell region 30 is formed by a known method according to the selected material, and then the reflective layer 41 is formed.
  • the supporting substrate 40 having the electrode 42 is prepared (the electrode 42 may be formed after wafer bonding or omitted).
  • the supporting substrate 40 is bonded to at least one side of the supporting substrate 40 and the reflective layer 41.
  • the materials constituting layer 43 are formed and then joined.
  • the substrate 10 is removed.
  • the substrate 10 When a transparent substrate 10 such as sapphire or SiC is used, the substrate 10 can be removed by a laser lift-off method (also can be removed by wet etching or mechanical elongation), and Si, Ge, SiGe, In the case of the opaque substrate 10 such as GaAs, it may be removed by wet etching. Finally, as in (d), the rough surface 21 is formed and the electrode 22 is formed.
  • the rough surface 21 may be formed by various methods such as wet etching, dry etching, and mechanical polishing. Preferably it is possible to form a rough surface 21 as in FIG. 5 using a basic etchant (eg KOH, NaOH).
  • the electrode 22 can be formed by stacking Ti / Ni / Au.
  • a conductive window having a hexagonal close-packed lattice structure comprising: a conductive window having a rough surface for scattering light on the side from which light is incident and having a first bandgap energy; ; A cell region formed on the conductive window and converting incident light into electrical energy, the cell region having a bandgap energy smaller than the first bandgap energy and having a light absorption region made of a heterogeneous material different from the material constituting the conductive window; And a reflective layer reflecting light incident from the opposite side of the conductive window to the cell region with respect to the cell region.
  • the window means an entrance through which light comes in.
  • the first bandgap energy When the conductive window is a layer of one material composition, the first bandgap energy has a single value, while when the conductive window is a layer of a plurality of material compositions, the first bandgap energy is the average value of each bandgap energy. It can be defined as.
  • the term "heterogeneous material different from the material constituting the conductive window” means that the GaN-based compound semiconductor (Al x Ga y In 1-xy N (0 ⁇ x ⁇ 1, It means that the light absorption region is made of a material other than 0 ⁇ y ⁇ 1,0 ⁇ x + y ⁇ 1).
  • a photovoltaic device wherein the first bandgap energy is greater than 3 eV.
  • GaN-based compound semiconductors, ZnO-based oxides and MgO-based oxides may satisfy these conditions.
  • a bandgap energy of 3 eV or more it is possible to guide the cell region without absorbing or reflecting most of the light from the sun.
  • a material having a large bandgap energy generally has a high melting point
  • various cell regions applicable at high and low temperatures by using a conductive window having a bandgap energy of 3 eV or more as a base for forming a cell region Forming techniques (PECVD, MOCVD, MBE, HVPE, Sputtering, Evaporator, etc.) can be used.
  • the bandgap energy of the light absorption region is 2 eV or less. This configuration makes it possible to use a material such as Si as the light absorption region.
  • a photovoltaic device characterized in that the cell region contains a compound bonded with a group III-arsenic (As).
  • a photovoltaic device characterized in that the cell region contains a compound bonded by group III-phosphorus (P).
  • a photovoltaic device wherein the cell region contains a compound bonded with Cu-In-Ga-S (Se).
  • Photovoltaic devices eg, ZnO, MgZnO, MgO
  • the conductive window is made of an oxide containing zinc (Zn) or magnesium (Mg).
  • the cell region may be made of an organic material such as a dye-sensitized die.
  • the present disclosure it is possible to improve the problems caused by the use of the existing glass substrate and / or the transparent conductive oxide film (TCO).
  • photovoltaic device it is possible to provide a substrate or a base capable of growing a cell region at a high temperature.
  • photovoltaic device According to another photovoltaic device according to the present disclosure, it is possible to make a photovoltaic device having a rough surface that can solve problems such as shunting paths, pinholes, local depletion, and the like.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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  • Engineering & Computer Science (AREA)
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Abstract

La présente invention concerne un dispositif photovoltaïque comprenant : une fenêtre conductrice dotée d'une structure de réseau hexagonal compact, d'une surface rugueuse permettant de diffuser la lumière au niveau d'un côté d'incidence, et d'une première bande d'énergie interdite ; une région de cellule formée sur la fenêtre conductrice, ladite région convertissant la lumière introduite en énergie électrique et offrant une région de photo-absorption dont la bande d'énergie interdite est inférieure à la première bande d'énergie interdite et fabriquée dans un matériau différent de celui de la fenêtre conductrice ; et une couche réfléchissante destinée à réfléchir la lumière introduite par le côté opposé de la fenêtre conductrice, par rapport à la région de cellule, vers la région de cellule.
PCT/KR2014/006197 2013-07-10 2014-07-10 Dispositif photovoltaïque WO2015005695A1 (fr)

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KR102591150B1 (ko) * 2021-12-30 2023-10-19 웨이브로드 주식회사 비발광 3족 질화물 반도체 소자를 제조하는 방법

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