WO2014208043A1 - Détecteur de grandeur physique - Google Patents

Détecteur de grandeur physique Download PDF

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Publication number
WO2014208043A1
WO2014208043A1 PCT/JP2014/003219 JP2014003219W WO2014208043A1 WO 2014208043 A1 WO2014208043 A1 WO 2014208043A1 JP 2014003219 W JP2014003219 W JP 2014003219W WO 2014208043 A1 WO2014208043 A1 WO 2014208043A1
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WO
WIPO (PCT)
Prior art keywords
substrate
physical quantity
resistivity
insulating film
semiconductor layer
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PCT/JP2014/003219
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English (en)
Japanese (ja)
Inventor
圭正 杉本
酒井　峰一
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株式会社デンソー
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Publication of WO2014208043A1 publication Critical patent/WO2014208043A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration

Definitions

  • a hermetic chamber is formed between a first substrate and a second substrate, a sensing unit that outputs a sensor signal corresponding to a physical quantity is provided in the hermetic chamber, and the second substrate is maintained at a predetermined potential.
  • the present invention relates to a physical quantity sensor.
  • Patent Document 1 a first substrate on which a sensing unit that outputs a sensor signal corresponding to a physical quantity is formed, and a second substrate that is bonded to the first substrate so as to seal the sensing unit,
  • a physical quantity sensor comprising: Note that the first substrate has a silicon substrate on which a sensing portion is formed, and the second substrate has a structure in which a silicon substrate to be a bonded substrate is covered with an insulating film.
  • a parasitic capacitance is generated between the first substrate and the second substrate, but the potential of the second substrate is not stable because the potential of the second substrate (bonded substrate) is in a floating state. It may become stable. For this reason, the parasitic capacitance generated between the first substrate and the second substrate varies, and the change in the parasitic capacitance may become noise.
  • a contact portion made of aluminum or the like is formed on a bonded substrate that constitutes the second substrate, and the bonded substrate and an external circuit are connected via the contact portion. It is conceivable to maintain a constant potential. That is, it is conceivable to make the parasitic capacitance generated between the first substrate and the second substrate constant. In this case, if the contact resistance between the bonded substrate and the contact portion is high, it is difficult to apply a sufficient charge to the bonded substrate, so it is desirable to reduce the contact resistance.
  • the present disclosure aims to provide a physical quantity sensor that can reduce the contact resistance between the bonded substrate and the contact portion without increasing the number of manufacturing steps.
  • a physical quantity sensor includes a first substrate having one surface, a second substrate having one surface, the second substrate being bonded to the first substrate in a state of facing the one surface of the first substrate, 1.
  • a sensing unit is provided in an airtight chamber formed between the first and second substrates and outputs a sensor signal corresponding to a physical quantity.
  • the second substrate is formed of a P-type silicon substrate having a resistivity of 0.01 to 0.2 [ ⁇ ⁇ cm], and is connected to a contact portion formed using a metal material to have a predetermined potential. Having a bonded substrate).
  • the first substrate is an SOI (Silicon-on-Insulator) substrate in which a support substrate, an insulating film, and a semiconductor layer are sequentially stacked, and the surface of the semiconductor layer opposite to the insulating film is one surface of the first substrate. It can be said that.
  • SOI Silicon-on-Insulator
  • At least a part of the sensing unit is formed in the semiconductor layer, and a periodic voltage carrier wave is input to the part. It can be composed of a silicon substrate having a rate of 0.01 to 20 [ ⁇ ⁇ cm].
  • the support substrate is made of a P-type silicon substrate having a resistivity of 0.01 to 0.2 [ ⁇ ⁇ cm], and is connected to an external circuit through a contact portion made of a metal material. Thus, it can be maintained at a predetermined potential.
  • the semiconductor layer can be composed of a P-type silicon substrate having a resistivity of 0.01 to 0.03 [ ⁇ ⁇ cm]. Further, the semiconductor layer can be formed of an N-type silicon substrate having a resistivity of 0.01 to 0.2 [ ⁇ ⁇ cm].
  • the sheet resistance (depletion layer resistance) is 1.0 ⁇ ⁇ cm 2 or less, and it is possible to suppress a decrease in detection accuracy.
  • the drawing It is sectional drawing of the acceleration sensor in 1st Embodiment of this indication. It is a top view by the side of the 2nd board
  • FIG. 8E It is sectional drawing which shows the manufacturing process following FIG. 8E. It is sectional drawing which shows the manufacturing process with respect to a bonded substrate board. It is sectional drawing which shows the manufacturing process following FIG. 9A. It is sectional drawing which shows the manufacturing process of the acceleration sensor shown in FIG. It is sectional drawing which shows the manufacturing process following FIG. 10A. It is sectional drawing which shows the manufacturing process following FIG. 10B.
  • FIG. 10C is a cross-sectional view showing a manufacturing step following FIG. 10C.
  • the acceleration sensor is configured by laminating a first substrate 10 and a second substrate 40. 1 corresponds to the II cross section in FIGS. 2 and 3.
  • FIG. 1 corresponds to the II cross section in FIGS. 2 and 3.
  • the first substrate 10 is an SOI (Silicon on Insulator) substrate in which a semiconductor layer 13 is disposed on a support substrate 11 via an insulating film 12, and one surface 10 a is insulated from the semiconductor layer 13. It is comprised by the surface on the opposite side to the film
  • the support substrate 11 and the semiconductor layer 13 are composed of a silicon substrate, and the insulating film 12 is composed of SiO 2 , SiN, or the like.
  • the semiconductor layer 13 is subjected to micromachining to form a groove portion 14, and the movable portion 20 and the peripheral portion 30 are partitioned by the groove portion 14.
  • the support substrate 11 and the insulating film 12 are recessed in a portion facing the movable portion 20. 15 is formed.
  • the movable portion 20 includes a rectangular frame-shaped frame portion 22 in which a planar rectangular opening portion 21 is formed, and a torsion beam 23 provided so as to connect opposite sides of the opening portion 21.
  • the movable portion 20 is supported by the support substrate 11 by connecting the torsion beam 23 to the anchor portion 24 supported by the insulating film 12.
  • the x-axis direction is the left-right direction in FIG. 1
  • the y-axis direction is the direction perpendicular to the x-axis in the plane of the first substrate 10
  • the z-axis direction is the surface of the first substrate 10. The direction is normal to the direction.
  • the torsion beam 23 is a member that becomes a rotation axis that becomes the rotation center of the movable portion 20 when an acceleration in the z-axis direction is applied, and is provided so as to divide the opening 21 into two in this embodiment.
  • the frame portion 22 has an asymmetric shape with respect to the torsion beam 23 so that it can rotate around the torsion beam 23 when an acceleration in the z-axis direction is applied.
  • the length of the frame portion 22 in the x-axis direction to the end of the portion farthest from the torsion beam 23 in the first portion 22a is farthest from the torsion beam 23 in the second portion 22b.
  • the length to the end of the part is shorter than the length in the x-axis direction. That is, in the frame portion 22 of the present embodiment, the mass of the first part 22a is smaller than the mass of the second part 22b.
  • pad portions 25 and 31 and a frame-shaped sealing portion 32 are formed on one surface 10a of the first substrate 10 (the surface of the semiconductor layer 13). Specifically, the pad portion 25 is formed on the anchor portion 24 and connected to the anchor portion 24 (movable portion 20), and the pad portion 31 is formed on the peripheral portion 30 and connected to the peripheral portion 30 for sealing.
  • the part 32 is formed in the peripheral part 30 so as to surround the movable part 20 (groove part 14).
  • the pad part 31 is arrange
  • a frame-like spacer 33 surrounding the sealing portion 32 is formed on the outer edge portion of the peripheral portion 30 on the one surface 10 a of the first substrate 10.
  • the spacer 33 maintains the distance between the first substrate 10 and the second substrate 40, and is composed of an insulating film such as an oxide film.
  • an oxide film such as an oxide film.
  • phosphorus or the like serving as an ion trap may be added to the oxide film constituting the spacer 33 in order to capture sodium ions or the like applied from the external environment.
  • the second substrate 40 is bonded to the bonded substrate 41, the insulating film 42 formed on one side and the side of the bonded substrate 41 facing the first substrate 10, and the bonded substrate 41.
  • the substrate 41 has an insulating film 43 formed on the other surface opposite to the first substrate 10 side. Then, one surface 40 a of the second substrate 40 is formed on the surface of the insulating film 42 facing the first substrate 10.
  • the bonded substrate 41 is made of a silicon substrate, the insulating film 42 is made of SiO 2 , SiN or the like, and the insulating film 43 is made of TEOS or the like.
  • the first and second wiring portions 51 and 52 are formed on the one surface 40a of the second substrate 40.
  • the first wiring part 51 is formed in a portion facing the first part 22a, and includes a first fixed electrode 51a and a first fixed electrode that form a predetermined capacity with the first part 22a.
  • the second wiring portion 52 is formed in a portion facing the second portion 22b, and is pulled out from the second fixed electrode 52a and the second fixed electrode 52a that constitutes a predetermined capacity between the second portion 22b.
  • Second lead wiring 52b Second lead wiring 52b.
  • the first and second fixed electrodes 51a and 52a have the same planar shape, and form an equal capacity between the first and second portions 22a and 22b when no acceleration is applied.
  • the first and second lead wires 51b and 52b have circular shapes at the ends opposite to the first and second fixed electrodes 51a and 52a, respectively. And the part which opposes the 1st, 2nd fixed electrodes 51a and 52a among the frame parts 22 becomes a movable electrode.
  • pad portions 53 and 54 are formed at portions facing the pad portion 25 and pad portion 31, and the sealing portion 32 is disposed at a portion facing the sealing portion 32.
  • the sealing part 55 having the same shape as that is formed.
  • the pad parts 53 and 54 and the sealing part 55 are made of aluminum or the like.
  • each through electrode portion 70 is formed in the second substrate 40 so as to penetrate the second substrate 40 in the thickness direction (the stacking direction of the first and second substrates 10 and 40).
  • a through electrode 70 c is formed in a through hole 70 a that penetrates the insulating film 43, the bonded substrate 41, and the insulating film 42 via an insulating film 70 b, and the through electrode 70 c and the external circuit are formed on the insulating film 43.
  • the pad portion 70d that is electrically connected to the pad is formed.
  • the through electrode portions 70 are electrically connected to the first and second wiring portions 51 and 52 and the pad portions 53 and 54, respectively. That is, the through hole 70a in each through electrode part 70 is formed to reach the first and second wiring parts 51 and 52 and the pad parts 53 and 54, respectively.
  • the two wiring portions 51 and 52 and the pad portions 53 and 54 are disposed in the through hole 70a so as to be electrically connected.
  • the movable portion 20 is connected to the through electrode 70c via the pad portions 25 and 53, and the first and second fixed electrodes 51a and 52a are connected to the through electrode 70c.
  • the peripheral portion 30 is connected to the through electrode 70 c via the pad portions 31 and 54.
  • the through hole 70a of the through electrode portion 70 that is electrically connected to the first and second wiring portions 51 and 52 corresponds to the first and second lead wirings 51b and 52b in the first and second wiring portions 51 and 52, respectively.
  • the first and second fixed electrodes 51a and 52a are formed so as to reach the end opposite to the side.
  • the through hole 70a is cylindrical
  • the insulating film 70b is made of an insulating material such as TEOS
  • the through electrode 70c is made of aluminum or the like.
  • a contact hole 43 a that opens a predetermined portion of the bonded substrate 41 is formed in the insulating film 43.
  • a contact portion 80 for connecting the bonded substrate 41 and an external circuit and maintaining the bonded substrate 41 at a predetermined potential is embedded.
  • the contact portion 80 is made of aluminum, like the through electrode 70c and the pad portion 70d.
  • the above is the configuration of the second substrate 40 in the present embodiment. And the said 1st, 2nd board
  • the first and second substrates 10 and 40 are integrated by metal bonding of the pad portion 25 and the pad portion 53, the pad portion 31 and the pad portion 54, and the sealing portion 32 and the sealing portion 55. It has become.
  • the space between the first and second substrates 10 and 40 forms an airtight chamber 90, and the frame portion 22 and the first and second fixed electrodes 51 a and 52 a (sensing unit 60) are sealed in the airtight chamber 90. ing.
  • the hermetic chamber 90 is, for example, a vacuum.
  • the above is the basic configuration of the acceleration sensor in the present embodiment. Next, the configuration of the support substrate 11, the semiconductor layer 13, and the bonded substrate 41 that are characteristic points of the present embodiment will be specifically described.
  • the contact resistance between silicon and aluminum becomes almost zero when the resistivity of silicon is 0.2 ⁇ ⁇ cm or less.
  • the contact resistance gradually increases as the resistivity of silicon increases. That is, silicon and aluminum are in ohmic contact when the resistivity of silicon is 0.2 ⁇ ⁇ cm or less, and are in Schottky contact when the resistivity of silicon is greater than 0.2 ⁇ ⁇ cm.
  • FIG. 4 is a diagram showing the relationship between the contact resistance between P-type silicon and aluminum, but the relationship between the resistivity of silicon and the contact resistance even when a metal material such as gold other than aluminum is used. The same.
  • the bonded substrate 41 is a P-type, and is formed of a silicon substrate having a resistivity of 0.01 to 0.2 ⁇ ⁇ cm.
  • the bonded substrate 41 is formed of a silicon substrate having a resistivity at which the contact resistance with the contact portion 80 is substantially zero.
  • 0.01 ⁇ ⁇ cm which is the lower limit of the resistivity, is the lowest limit resistivity when the silicon substrate is actually formed, and the same applies to the support substrate 11 and the semiconductor layer 13 described below.
  • the bonded substrate 41 is made of an N-type silicon substrate, if the contact resistance is made to be almost zero due to the work function with aluminum, the minimum limit resistivity when forming Si is obtained. A value lower than a certain 0.01 ⁇ ⁇ cm is required. For this reason, when the bonded substrate 41 is composed of an N-type silicon substrate, it is necessary to form a high-concentration layer in a portion in contact with the contact portion 80, which increases the manufacturing process.
  • the acceleration sensor as described above is a fully differential type composed of an operational amplifier 101, first and second capacitors 102a and 102b, and first and second switches 103a and 103b. It may be used by being connected to the CV conversion circuit 110.
  • the first capacitor 102a and the first switch 103a are arranged in parallel between the inverting input terminal of the operational amplifier 101 and the + side output terminal.
  • the second capacitor 102b and the second switch 103b are disposed in parallel between the non-inverting input terminal of the operational amplifier 101 and the negative output terminal.
  • the operational amplifier 101 has an inverting input terminal electrically connected to the first fixed electrode 51a and a non-inverting input terminal electrically connected to the second fixed electrode 52a.
  • a pulse-shaped periodic carrier wave having an amplitude between a voltage Vcc and 0 V and having a predetermined frequency is input to the movable unit 20.
  • the frame portion 22 rotates according to the acceleration with the torsion beam 23 as the rotation axis. Since the capacitance between the first portion 22a and the first fixed electrode 51a and the capacitance between the second portion 22b and the second fixed electrode 52a change according to the acceleration, the CV conversion circuit 110 Output a sensor signal Vout (V1-V2) corresponding to the capacitance.
  • the potential of the support substrate 11 is in a floating state, the potential of the support substrate 11 is displaced depending on the carrier wave input to the anchor portion 24 (frame portion 22).
  • the support substrate 11 has a resistivity, if the resistivity is large, the potential of the portion of the support substrate 11 that faces the anchor portion 24 via the insulating film 12 and the outer edge portion of the frame portion 22 And a potential of the portion facing each other. That is, the electrostatic force (parasitic capacitance) generated between a portion of the support substrate 11 that faces the anchor portion 24 via the insulating film 12 and the anchor portion 24, and the outer edge of the frame portion 22 of the support substrate 11.
  • the electrostatic force (parasitic capacitance) generated between the part facing the part and the outer edge part is different. For this reason, at the time of detection, the difference in electrostatic force becomes an output error, and the detection accuracy decreases.
  • the support substrate 11 is composed of a silicon substrate having a resistivity of 0.01 to 20 ⁇ ⁇ cm.
  • FIG. 6 shows a simulation result using a silicon substrate having a thickness of 120 ⁇ m, a width of 400 ⁇ m, and a length of 2 mm. Further, since the phase difference is the same between the P-type silicon substrate and the N-type silicon substrate, the support substrate 11 may be configured by either the P-type silicon substrate or the N-type silicon substrate.
  • the semiconductor layer 13 (frame portion 22) detects charges generated due to capacitance changes when acceleration is applied, the surface resistance (depletion) is reduced so as to make the phase shift at the electrode interface negligible.
  • the layer resistance is preferably 1.0 ⁇ ⁇ cm 2 or less. Therefore, as shown in FIG. 7, the semiconductor layer 13 is a P-type silicon substrate having a thickness of 0.01 to 0.03 ⁇ ⁇ cm or an N-type silicon substrate having a thickness of 0.01 to 0.2 ⁇ ⁇ cm. It is composed of a silicon substrate.
  • FIGS. 8A to 8F a method for manufacturing the acceleration sensor will be described with reference to FIGS. 8A to 8F, FIGS. 9A to 9B, and FIGS. 10A to 10D.
  • a support substrate 11 is prepared, and an insulating film 12 is formed on the support substrate 11 by a CVD (Chemical Vapor Deposition) method, thermal oxidation, or the like.
  • the support substrate 11 is composed of an N-type silicon substrate or a P-type silicon substrate having a resistivity of 0.01 to 20 ⁇ ⁇ cm.
  • a mask such as a resist or an oxide film is formed on the insulating film 12 and wet etching or the like is performed to form a recess 15 in the support substrate 11.
  • the insulating film 12 and the semiconductor layer 13 are joined to form the first substrate 10.
  • the bonding between the insulating film 12 and the semiconductor layer 13 is not particularly limited, but can be performed as follows, for example.
  • the bonding surface of the insulating film 12 and the bonding surface of the semiconductor layer 13 are irradiated with N 2 plasma, O 2 plasma, or an Ar ion beam to activate the bonding surfaces of the insulating film 12 and the semiconductor layer 13. Then, alignment is performed with an infrared microscope or the like using an appropriately formed alignment mark, and the insulating film 12 and the semiconductor layer 13 are bonded by so-called direct bonding at room temperature to 550 ° C.
  • the semiconductor layer 13 is a P-type silicon substrate having a resistivity of 0.01 to 0.03 ⁇ ⁇ cm, or an N-type having a resistivity of 0.01 to 0.2 ⁇ ⁇ cm. It is composed of a silicon substrate.
  • the insulating film 12 and the semiconductor layer 13 may be bonded by a bonding technique such as anodic bonding, intermediate layer bonding, or fusion bonding. And after joining, you may perform the process which improves joining quality, such as high temperature annealing. Further, after bonding, the semiconductor layer 13 may be processed to a desired thickness by grinding and polishing.
  • an insulating film is formed on one surface 10a of the first substrate 10 by a CVD method or the like.
  • the spacer 33 is formed by patterning the insulating film by reactive ion etching or the like using a mask (not shown) such as a resist or an oxide film.
  • a metal film is formed on one surface 10a of the first substrate 10 by a CVD method or the like.
  • the pad parts 25 and 31 and the sealing part 32 are formed by patterning the said metal film by reactive ion etching etc. using masks (not shown), such as a resist and an oxide film.
  • a groove 14 is formed in the semiconductor layer 13 by reactive ion etching or the like using a mask (not shown) such as a resist or an oxide film.
  • a mask such as a resist or an oxide film.
  • a bonded substrate 41 is prepared as shown in FIG. 9A, and an insulating film 42 is formed on the entire surface of the bonded substrate 41 by thermal oxidation or the like.
  • the bonded substrate 41 is composed of a P-type silicon substrate having a resistivity of 0.01 to 0.03 ⁇ ⁇ cm as described above.
  • a metal film is formed on a portion of the insulating film 42 facing the first substrate 10. Then, by patterning the metal film by reactive ion etching or the like using a mask (not shown) such as a resist or an oxide film, the first and second wiring parts 51 and 52, pad parts 53 and 54, sealing A stop 55 is formed.
  • a mask such as a resist or an oxide film
  • the first substrate 10 and the second substrate 40 are bonded. Specifically, alignment is performed by an infrared microscope or the like using appropriately formed alignment marks, and the pad portions 25 and 31 of the first substrate 10, the sealing portion 32, and the pad portions 53 and 54 of the second substrate 40. Then, the sealing portion 55 is metal-bonded at 300 to 500 °.
  • the space between the first substrate 10 and the second substrate 40 is sealed by the sealing portion 32 and the sealing portion 55 to form an airtight chamber 90, and the frame portion 22 and the first and second fixed electrodes 51a. , 52a (sensing unit 60) is hermetically sealed in the hermetic chamber 90. Note that the distance between the first substrate 10 and the second substrate 40 is defined by the spacer 33.
  • the insulating film 42 and the bonded substrate 41 are ground from the side opposite to the first substrate 10 side, and the insulating film 42 on the side opposite to the first substrate 10 side is removed and bonded.
  • the substrate 41 is thinned. This step may be performed before the first substrate 10 and the second substrate 40 are bonded.
  • the two through holes 70 a are formed by removing the bonded substrate 41 and the insulating film 42 at locations corresponding to the pad portions 53 and 54. Further, in a cross section different from FIG. 10C, by removing the bonding substrate 41 and the insulating film 42 at locations corresponding to the first and second lead wirings 51b and 52b in the first and second wiring parts 51 and 52, Two through holes 70a are formed. Then, an insulating film 70b such as TEOS is formed on the wall surface of each through hole 70a. At this time, the insulating film 43 is composed of an insulating film formed on the side of the bonded substrate 41 opposite to the first substrate 10 side.
  • the insulating film 43 and the insulating film 70b are formed in the same process. Thereafter, the insulating film 70b formed at the bottom of each through hole 70a is removed, and the first and second lead lines 51b and 52b and the pad part in the first and second wiring parts 51 and 52 are formed in each through hole 70a. 53 and 54 are exposed.
  • each through electrode 70c is electrically connected to the first and second lead wires 51b and 52b and the pad portions 53 and 54 in the first and second wiring portions 51 and 52, respectively. Thereafter, the through electrode portion 70 is formed by patterning the metal film on the insulating film 43 to form the pad portion 70d.
  • the acceleration sensor is manufactured by forming the contact hole 43a in the insulating film 43 and embedding the metal film in the contact hole 43a to form the contact portion 80.
  • substrates 10 and 40 are prepared, and after dicing and cutting these, it divides
  • the bonded substrate 41 is composed of a P-type silicon substrate having a resistivity of 0.01 to 0.03 ⁇ ⁇ cm. For this reason, the contact resistance between the bonded substrate 41 and the contact portion 80 can be made substantially zero without forming a high concentration layer on the bonded substrate 41 (see FIG. 4). That is, contact resistance can be reduced without increasing the number of manufacturing steps.
  • the support substrate 11 is made of a silicon substrate having a resistivity of 0.01 to 20 ⁇ ⁇ cm. Therefore, even when a carrier wave is input to the movable portion 20 (semiconductor layer 13) when connected to a fully differential CV conversion circuit, the potential of the support substrate 11 is prevented from varying from part to part. It can suppress and it can suppress that detection accuracy falls.
  • the semiconductor layer 13 is composed of a P-type silicon substrate having a resistivity of 0.01 to 0.03 ⁇ ⁇ cm or an N-type silicon substrate having a resistivity of 0.01 to 0.2 ⁇ ⁇ cm. Has been. For this reason, surface resistance (depletion layer resistance) becomes 1.0 ⁇ ⁇ cm 2 or less, and it is possible to suppress a decrease in detection accuracy.
  • the acceleration sensor that detects acceleration in the z-axis direction has been described as an example.
  • the present disclosure may be applied to an acceleration sensor that detects acceleration in the x-axis direction or the y-axis direction.
  • the first substrate 10 is formed with a movable part 20 having a movable electrode that is displaced according to acceleration, and a fixed part having a fixed electrode facing the movable electrode.
  • a carrier wave is input to either the movable electrode or the fixed electrode according to the CV conversion circuit to be connected. Therefore, the support substrate 11 is composed of a silicon substrate having a resistivity of 0.01 to 20 ⁇ ⁇ cm.
  • the physical quantity sensor of the present disclosure can be applied to an angular velocity sensor or the like.
  • a contact portion similar to the contact portion 80 may be formed on the support substrate 11, and the support substrate 11 and an external circuit may be connected to keep the potential of the support substrate 11 constant.
  • the support substrate 11 is composed of a P-type silicon substrate having a resistivity of 0.01 to 0.2 ⁇ ⁇ cm. According to this, it is possible to suppress a variation in parasitic capacitance generated between the semiconductor layer 13 and the support substrate 11 while reducing the contact resistance between the support substrate 11 and the contact portion.

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Abstract

L'invention concerne un détecteur de grandeur physique comprenant un premier substrat (10), un deuxième substrat (40) réuni au premier substrat, et une unité de détection (60) située à l'intérieur d'une chambre étanche à l'air (90) formée entre le premier substrat et le deuxième substrat, de façon à produire en sortie un signal de détecteur en réaction à une grandeur physique. Réalisé en silicium dopé P, le deuxième substrat présente une résistivité se situant dans une plage allant de 0,01 Ω·cm à 0,2 Ω·cm. Il est pourvu d'un substrat collé (41) maintenu à un potentiel de consigne par une connexion avec une pièce de contact (80) en matière métallique.
PCT/JP2014/003219 2013-06-27 2014-06-17 Détecteur de grandeur physique WO2014208043A1 (fr)

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JP2013134840A JP2015010871A (ja) 2013-06-27 2013-06-27 物理量センサ
JP2013-134840 2013-06-27

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DK2841183T3 (en) 2012-03-26 2018-08-27 Fluor Tech Corp EMISSION REDUCTION TO CO2 COLLECTION

Citations (4)

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