WO2014203488A1 - Elément de conversion de longueur d'onde, source de lumière et lampe - Google Patents

Elément de conversion de longueur d'onde, source de lumière et lampe Download PDF

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Publication number
WO2014203488A1
WO2014203488A1 PCT/JP2014/003033 JP2014003033W WO2014203488A1 WO 2014203488 A1 WO2014203488 A1 WO 2014203488A1 JP 2014003033 W JP2014003033 W JP 2014003033W WO 2014203488 A1 WO2014203488 A1 WO 2014203488A1
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WIPO (PCT)
Prior art keywords
wavelength conversion
conversion member
phosphor layer
light
holding material
Prior art date
Application number
PCT/JP2014/003033
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English (en)
Japanese (ja)
Inventor
白石　誠吾
長尾　宣明
純久 長崎
森本　廉
山中　一彦
Original Assignee
パナソニックＩｐマネジメント株式会社
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Publication of WO2014203488A1 publication Critical patent/WO2014203488A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/16—Laser light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/176—Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/30—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by reflectors
    • F21S41/37—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by reflectors characterised by their material, surface treatment or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Definitions

  • the present disclosure relates to a wavelength conversion member, a light source, and a lamp.
  • a semiconductor laser element a light emitting part that emits light by laser light emitted from the semiconductor laser element, and a light emitting part facing surface that faces the light emitting part, and a heat conducting member that receives heat of the light emitting part through the light emitting part facing surface
  • a gap layer that is provided between the light emitting portion and the light emitting portion facing surface and conducts heat of the light emitting portion to the light emitting portion facing surface, and the gap layer includes at least an inorganic amorphous material.
  • the problem of the present disclosure is to improve at least one of luminous efficiency and reliability.
  • a wavelength conversion member includes a phosphor layer that converts light from a semiconductor light emitting element into light having a longer wavelength, and a holding material that transmits light having an emission wavelength of the phosphor layer, The holding material is disposed so as to surround a surface of the phosphor layer that intersects a surface on which light from the semiconductor light emitting element is incident.
  • wavelength conversion member of the present disclosure at least one of light emission efficiency and reliability can be improved.
  • FIG. 1 is a schematic diagram illustrating a light source according to an embodiment.
  • FIG. 2 is a schematic diagram illustrating a modification of the light source according to the embodiment.
  • FIG. 3 is a schematic diagram illustrating a modification of the light source according to the embodiment.
  • FIG. 4 is a schematic diagram illustrating a lamp according to an embodiment.
  • FIG. 5 is a schematic view showing a modification of the lamp according to the embodiment.
  • FIG. 6 is a schematic diagram illustrating a modification of the lamp according to the embodiment.
  • FIG. 7 is a schematic diagram illustrating a modification of the lamp according to the embodiment.
  • FIG. 8 is a schematic diagram illustrating a vehicle according to an embodiment.
  • FIG. 9 is a schematic view showing a wavelength conversion member of one embodiment.
  • FIG. 10 is a diagram for explaining an analysis method according to an embodiment.
  • FIG. 11 is a diagram illustrating an analysis result of one example.
  • FIG. 12 is a graph showing the relationship between the size of the holding material and the temperature in one example.
  • FIG. 13 is a graph showing the relationship between the area ratio between the holding material and the phosphor layer and the temperature in one example.
  • FIG. 14 is a graph showing the relationship between the film thickness of the holding material and the temperature in one example.
  • FIG. 15 is a graph showing the relationship between the film thickness ratio between the holding material and the phosphor layer and the temperature in one example.
  • FIG. 16 is a graph showing the relationship between the volume ratio between the holding material and the phosphor layer and the temperature in one example.
  • a wavelength conversion member includes a phosphor layer that converts light from a semiconductor light emitting element into light having a longer wavelength, and a holding material that transmits light having an emission wavelength of the phosphor layer.
  • the holding material is disposed so as to surround the surface of the phosphor layer that intersects the surface on which light from the semiconductor light emitting element is incident.
  • a surface of the phosphor layer on which light from the semiconductor light emitting element is incident may not be covered with the holding material.
  • the wavelength conversion member according to an aspect of the present disclosure may further include a reflective layer that reflects light having the emission wavelength of the phosphor layer.
  • the reflective layer may be disposed so as to contact a surface of the phosphor layer opposite to a surface on which light from the semiconductor light emitting element is incident.
  • the reflective layer may be disposed so as to surround a surface of the holding material that faces the surface surrounding the holding material.
  • the phosphor layer may include phosphor powder and a binder material.
  • the area of the surface in contact with the holding material in the phosphor layer may be larger than the area of the surface not in contact with the holding material.
  • the holding material may be made of an inorganic material.
  • a light source includes a semiconductor light emitting element and the wavelength conversion member according to any one of the aspects described above.
  • the lamp according to one aspect of the present disclosure includes a semiconductor light emitting element, a mirror, and the wavelength conversion member according to any one of the above aspects.
  • the semiconductor light emitting element may be a semiconductor laser element
  • the mirror may be disposed between the semiconductor laser element and the wavelength conversion member.
  • an incident optical system may be further provided between the semiconductor laser element and the mirror.
  • a part of the wavelength conversion member may be in contact with the mirror.
  • the holding member is partly in contact with the mirror, the other part is separated from the mirror, a surface of the phosphor layer on which light from the semiconductor light emitting element is incident, and the mirror You may have a space
  • FIG. 1 shows a schematic configuration of a light source 20A according to an embodiment.
  • the light source 20 ⁇ / b> A of the present embodiment includes a wavelength conversion member 10 ⁇ / b> A and the semiconductor light emitting element 11.
  • the semiconductor light emitting element 11 can be, for example, a light emitting diode (LED), a super luminescent diode (SLD), or a laser diode (LD). In the present embodiment, a case where the semiconductor light emitting element 11 is an LD will be described as an example.
  • the semiconductor light emitting element 11 may be a single LD, or a plurality of optically coupled LDs.
  • the light emitted from the semiconductor light emitting element 11 may be blue-violet light, blue light, or light of other wavelengths.
  • the semiconductor light emitting element 11 may emit light having a plurality of wavelengths.
  • blue-violet light refers to light having a peak wavelength of 380 nm to 420 nm
  • blue light refers to light having a peak wavelength greater than 420 nm and not greater than 480 nm.
  • an incident optical system 14 that guides the light of the semiconductor light emitting element 11 to the wavelength conversion member 10A may be provided.
  • the incident optical system 14 may include, for example, at least one of a lens, a mirror, and an optical fiber.
  • the wavelength conversion member 10 ⁇ / b> A includes a phosphor layer 12 and a holding material 13 that holds the phosphor layer 12.
  • the wavelength conversion member 10A has, for example, a thick disk shape.
  • the wavelength conversion member 10A may have other shapes.
  • the wavelength conversion member 10A may have a rectangular plate shape or a square plate shape.
  • the phosphor layer 12 has, for example, a cylindrical shape.
  • the phosphor layer 12 may have other shapes.
  • the phosphor layer 12 may have a prismatic shape, a rectangular plate shape, or a square plate shape.
  • the phosphor layer 12 converts the wavelength of the light from the semiconductor light emitting element 11 into light having a longer wavelength.
  • the phosphor layer 12 may be a layer containing a phosphor, and the phosphor emits fluorescent light having a wavelength longer than that of the incident light when excited by the incident light.
  • the phosphor layer 12 may include, for example, phosphor powder containing a large number of phosphor particles and a binder material.
  • the type of the phosphor can be appropriately selected according to the wavelength of the incident light and the required wavelength of the emitted light.
  • the phosphor layer 12 may include, for example, a yellow phosphor and a blue phosphor in order to generate white light.
  • the yellow phosphor refers to a phosphor having an emission spectrum peak wavelength of 540 nm or more and 590 nm or less.
  • a blue phosphor refers to a phosphor having an emission spectrum peak wavelength of greater than 420 nm and less than or equal to 480 nm.
  • the phosphor layer 12 can be configured to include, for example, a yellow phosphor.
  • the binder material is disposed between the phosphor particles and binds the phosphor particles.
  • the binding material can be, for example, an inorganic material.
  • the binder material may be a medium such as resin, glass, or transparent crystal.
  • the phosphor layer 12 does not necessarily include a binder material, and may be a phosphor sintered body such as phosphor ceramics.
  • the holding material 13 is disposed so as to surround the side surface of the phosphor layer 12.
  • the side surface of the phosphor layer 12 refers to a surface of the phosphor layer 12 that surrounds the light incident surface on which light from the semiconductor light emitting element 11 is incident and intersects the incident surface.
  • the area of the surface of the phosphor layer 12 that contacts the holding material 13 may be larger than the area of the surface that does not contact the holding material 13.
  • the area of the side surface of the phosphor layer 12 may be larger than the sum of the areas of both end surfaces of the phosphor layer 12. In this way, heat dissipation of the phosphor layer 12 can be promoted.
  • the holding member 13 is a cylinder having a thick central side wall substantially coincident with the central axis of the phosphor layer 12, the height is substantially equal to the phosphor layer 12.
  • the holding material 13 may have other shapes.
  • the holding material 13 may have a thermal conductivity of 42 W / m ° C. or higher.
  • the holding material 13 may be made of an inorganic material, for example.
  • the holding material 13 may be made of resin, glass, transparent crystal, or the like.
  • the holding material 13 can be, for example, a sapphire substrate.
  • the holding material 13 transmits light having the emission wavelength of the phosphor layer 12. Thereby, the light extraction efficiency can be improved.
  • the holding material 13 may absorb or reflect light having the emission wavelength of the semiconductor light emitting element 11.
  • the holding material 13 transmits light having the emission wavelength of the semiconductor light emitting element 11, the light incident surface of the phosphor layer 12 may be covered with the holding material 13.
  • the holding material 13 Even if the holding material 13 transmits or does not transmit light having the emission wavelength of the semiconductor light emitting element 11, the holding material 13 faces the surface opposite to the light incident surface of the phosphor layer 12. It may be covered. When the holding material 13 does not cover the light incident surface of the phosphor layer 12, the loss of light incident on the phosphor layer 12 from the semiconductor light emitting element 11 can be reduced, so that the light emission efficiency is improved. Alternatively, when the holding material 13 does not cover the surface opposite to the light incident surface of the phosphor layer 12, the loss of light emitted from the phosphor layer 12 can be reduced, so that the light extraction efficiency is improved.
  • the semiconductor light emitting element 11 is an LD emitting blue-violet light and the phosphor layer 12 includes a yellow phosphor and a blue phosphor
  • the light emitted from the semiconductor light emitting element 11 passes through the incident optical system 14 and enters the phosphor layer 12 of the wavelength conversion member 10A.
  • the phosphor of the phosphor layer 12 emits yellow light and blue light, which are fluorescent lights, when excited by incident light. These emitted yellow light and blue light are mixed into white light.
  • the phosphor generates heat when it emits light.
  • the heat generated from the phosphor is conducted from the contact surface between the phosphor layer 12 and the holding material 13 to the holding material 13 side, and heat dissipation of the phosphor is promoted.
  • the holding material 13 surrounds the side surface of the phosphor layer 12. For this reason, the heat dissipation of the phosphor is promoted, and at least one of the light emission efficiency and the reliability is improved.
  • the light source 20B shown in FIG. 2 may include a wavelength conversion member 10B having a reflective layer 15 instead of the above-described wavelength conversion member 10A.
  • the reflective layer 15 is disposed so as to be in contact with the bottom of the phosphor layer 12.
  • the bottom of the phosphor layer 12 refers to a surface of the surface of the phosphor layer 12 opposite to the surface on which light from the semiconductor light emitting element 11 is incident.
  • the planar shape of the reflective layer 15 may be the same as the planar shape of the bottom of the phosphor layer 12.
  • the reflective layer 15 may be disk-shaped.
  • the planar shape of the reflective layer 15 may not match the planar shape of the bottom of the phosphor layer 12.
  • the light emitted from the semiconductor light emitting element 11 passes through the incident optical system 14 and enters the phosphor layer 12 of the wavelength conversion member 10B.
  • the phosphor of the phosphor layer 12 emits yellow light and blue light, which are fluorescent lights, when excited by incident light. These yellow light and blue light are mixed into white light.
  • yellow light and blue light emitted from the phosphor layer 12 are reflected by the reflection layer 15.
  • the same effect as that of the wavelength conversion member 10A can be obtained.
  • the light source 20C shown in FIG. 3 can also include a wavelength conversion member 10C having a reflective layer 16 disposed so as to surround the side surface of the holding material 13, instead of the wavelength conversion member 10A described above.
  • the side surface of the holding material 13 refers to a surface (outside surface) opposite to a surface (inner side surface) in contact with the phosphor layer 12 in the holding material 13.
  • the reflective layer 16 may not completely cover the side surface of the phosphor layer 12.
  • the light emitted from the semiconductor light emitting element 11 passes through the incident optical system 14 and enters the phosphor layer 12 of the wavelength conversion member 10C.
  • the phosphor of the phosphor layer 12 emits yellow light and blue light when excited by incident light. These yellow light and blue light are mixed into white light.
  • yellow light and blue light emitted from the phosphor layer 12 are reflected by the reflection layer 16.
  • a reflective layer may be provided on both the side surface of the holding material 13 and the bottom of the phosphor layer 12.
  • the light source of this embodiment can be used for a lamp 40A as shown in FIG.
  • the lamp 40A can be, for example, a vehicle headlamp or special illumination.
  • the lamp 40A may be a head-up display or a projector lamp.
  • the lamp 40A has a mirror 42 provided between the semiconductor light emitting element 11 and the wavelength conversion member 10A.
  • the mirror 42 reflects the light emitted from the wavelength conversion member 10 ⁇ / b> A and traveling in a direction different from the light emitting direction of the lamp 40 ⁇ / b> A so as to go in the light emitting direction.
  • the mirror 42 can be a concave mirror, for example.
  • the mirror 42 includes a light transmission portion 42a through which light traveling from the semiconductor light emitting element 11 toward the wavelength conversion member 10A is transmitted.
  • a portion of the mirror 42 excluding the light transmitting portion 42a is provided with a metal film made of aluminum (Al), silver (Ag), or the like, or a reflective film having a protective film formed on the surface.
  • the light emitted from the semiconductor light emitting element 11 passes through the incident optical system 14 and the light transmission part 42a and enters the phosphor layer 12 of the wavelength conversion member 10A.
  • the phosphor of the phosphor layer 12 emits yellow light and blue light when excited by incident light. These yellow light and blue light are mixed into white light.
  • Part of the white light generated by the wavelength conversion member 10A is directed forward (on the side opposite to the mirror 42 when viewed from the wavelength conversion member 10A), and the remaining portion is directed to the mirror 42 side.
  • White light directed toward the mirror 42 is reflected by the mirror 42 and travels forward.
  • the lamp 40A may be a so-called reflector type or a projector type.
  • a wavelength cut filter may be provided in any part of the emission optical system including the mirror 42. The wavelength cut filter may absorb or reflect the blue-violet light from the semiconductor light emitting element 11 so as not to be emitted to the outside.
  • the light source of this embodiment can also be used for a lamp 40B as shown in FIG.
  • the mirror 42 is in contact with at least a part of the wavelength conversion member 10A.
  • the mirror 42 may be in contact with the outer edge portion of the bottom surface of the wavelength conversion member 10A.
  • the mirror 42 may be in contact with the side surface of the wavelength conversion member 10A.
  • a wavelength cut filter may be provided on the bottom surface of the wavelength conversion member 10A.
  • the bottom surface of the wavelength conversion member refers to the surface of the wavelength conversion member opposite to the surface on which light from the semiconductor light emitting element is incident.
  • the side surface of the wavelength conversion member refers to a surface in a direction intersecting with a surface on which light from the semiconductor light emitting element 11 is incident, among the surfaces of the wavelength conversion member.
  • the lamp may include a wavelength conversion member 10B having a reflective layer 15 disposed so as to be in contact with the bottom of the phosphor layer 12.
  • the lamp 40C shown in FIG. 6 and the lamp 40D shown in FIG. 7 include a wavelength conversion member 10B.
  • the white light generated in the phosphor layer 12 is reflected directly or reflected by the reflection layer 15 toward the mirror 42, and reflected by the mirror 42 toward the front.
  • the lamp may include a wavelength conversion member 10C having a reflective layer 16 disposed so as to surround the side surface of the holding member 13 instead of the wavelength conversion member 10B.
  • the lamp may include a wavelength conversion member in which a reflective layer is provided on both the bottom of the phosphor layer 12 and the side surface (outer surface) of the holding material 13.
  • the lamps 40 ⁇ / b> A, 40 ⁇ / b> B, 40 ⁇ / b> C, and 40 ⁇ / b> D shown in FIGS. 4 to 7 have a gap between the mirror 42 and the surface of the phosphor layer 12 on which light from the semiconductor light emitting element 11 is incident. Thereby, the loss of the light emitted from the semiconductor light emitting element 11 when passing between the mirror 42 and the phosphor layer 12 can be reduced.
  • the lamps 40A, 40B, 40C, and 40D shown in FIGS. 4 to 7 have a gap between the mirror 42 and the surface of the holding member 13 that faces the mirror 42. Thereby, it is possible to reduce the light loss until the light emitted from the phosphor layer 12 is reflected by the mirror 42 and reaches the holding member 13.
  • the lamp of the present embodiment can be used for a vehicle 80 as shown in FIG.
  • the vehicle 80 includes a lamp 81 and a power supply source 82.
  • the vehicle 80 may include a generator 83 that is rotated by a drive source such as an engine.
  • the electric power generated by the generator 83 is stored in the electric power supply source 82.
  • the power supply source 82 can be a secondary battery.
  • the lamp 81 can be a lamp 40 ⁇ / b> A having the semiconductor light emitting element 11, the wavelength conversion member 10 ⁇ / b> A, and the mirror 42.
  • the vehicle 80 can include other lamps shown in the present embodiment.
  • the lamp used in the vehicle 80 can include, for example, the wavelength conversion member 10B or the wavelength conversion member 10C instead of the wavelength conversion member 10A.
  • the vehicle 80 is, for example, an automobile, a motorcycle, or a special vehicle.
  • the vehicle 80 may be an engine vehicle, an electric vehicle, or a hybrid vehicle.
  • FIG. 9 shows a schematic configuration of the wavelength conversion member 91 of one embodiment.
  • a phosphor layer 92 is embedded in one surface (upper surface) of a holding material 93 that is a sapphire substrate.
  • the inventors of the present invention conducted a simulation analysis of the thermal characteristics of the wavelength conversion member 91 while keeping the size of the phosphor layer 92 constant and changing the size of the holding material 93.
  • the phosphor layer 92 Y 3 Al 5 O 12 : Ce (hereinafter, YAG) was used as the phosphor, and glass was used as the binder material.
  • the phosphor layer 92 was a rectangular parallelepiped having a length of 0.4 mm, a width of 0.8 mm, a height of 0.1 mm, and a volume of 0.032 mm 3 .
  • the surface (upper surface) irradiated with light from the semiconductor light emitting element of the phosphor layer 92 is a rectangle having a length of 0.4 mm, a width of 0.8 mm, and an area of 0.32 mm 2 .
  • the phosphor layer 92 had a thermal conductivity of 7.75 W / m ° C., an emissivity of 0.9, and a heat transfer coefficient of 1 ⁇ 10 ⁇ 5 W / mm 2 ° C.
  • the holding material 93 was a rectangular parallelepiped having vertical L, horizontal L, and height (film thickness) Tsap, and the size of the holding material 93 was changed by changing the value of L or Tsap.
  • the upper surface of the holding material 93 is square, and the area Ssap thereof is L ⁇ L including the upper surface of the phosphor layer 92.
  • the heat conductivity of the holding material 93 at 20 ° C. is 42 W / m ° C.
  • the heat conductivity at 100 ° C. is 25 W / m ° C.
  • the radiation rate is 0.02
  • the heat transfer coefficient is 1 ⁇ 10 ⁇ 5 W / mm 2 ° C. did.
  • the inventors changed the thermal characteristics of the wavelength conversion member 91 when the wavelength conversion member 91 is irradiated with laser light having an incident power of 5 W by changing the vertical length L and the horizontal length L of the holding material 93. Simulation analysis was performed. In this simulation, the wavelength conversion member 91 was all divided by hexagonal mesh, and the nodes of each mesh were shared at the interface between the phosphor layer 92 and the holding material 93 (see FIG. 10). As shown in FIG. 11, the heat spreads from the portion irradiated with light to the surroundings.
  • FIG. 12 shows a case where the height Tsap of the holding material 93 is 5 mm and the length L (mm) of one side of the upper surface of the holding material 93 is changed. It is a graph which shows the relationship with the temperature of the body layer 92 or the holding material 93.
  • FIG. If the area of the upper surface of the holding member 93 (vertical L ⁇ horizontal L) is 25mm 2, 100mm 2, 400mm 2 , 900mm 2, 1600mm 2 and 3600 mm 2, the temperature of the phosphor layer 92, respectively, 881 ° C., 433 ° C. 208 ° C, 145 ° C, 115 ° C and 93 ° C.
  • the temperature of the holding member 93 when the area of the upper surface of the holding member 93 is 25mm 2, 100mm 2, 400mm 2 , 900mm 2, 1600mm 2 and 3600 mm 2, the temperature of the holding member 93, respectively, 815 °C, 367 °C, 140 °C, 81 °C 57 ° C and 38 ° C.
  • the temperatures of the phosphor layer 92 and the holding material 93 can be significantly reduced.
  • FIG. 13 shows the ratio of the area of the holding material 93 to the area of the phosphor layer 92 and the temperature of the phosphor layer 92 or the holding material 93 when the height Tsap of the holding material 93 is 5 mm and L is changed. It is a graph which shows the relationship.
  • the temperature of the phosphor layer 92 is 881 respectively. , 433 ° C, 208 ° C, 145 ° C, 115 ° C and 93 ° C.
  • the temperature of the holding material 93 is 815 ° C, 367 ° C, 140 ° C, 81 ° C, 57 ° C and 38 ° C.
  • FIG. 14 shows the thickness Tsap of the holding material 93 and the phosphor layer 92 or the holding material 93 when the vertical length L and the horizontal length L of the holding material 93 are 40 mm and the film thickness Tsap is changed. It is a graph which shows the relationship with temperature.
  • the temperature of the phosphor layer 92 is 170 ° C., 142 ° C., 128 ° C., 122 ° C. and 115 ° C., respectively. It became.
  • the temperature of the holding material 93 is 61 ° C., 62 ° C., 62 ° C., 60 ° C., and 57 ° C., respectively. It became °C.
  • the temperature of the phosphor layer 92 can be significantly reduced.
  • FIG. 15 shows the ratio of the film thickness of the holding material 93 to the film thickness of the phosphor layer 92 when the vertical length L and the horizontal length L of the holding material 93 are 40 mm and the film thickness Tsap is changed. And the temperature of the phosphor layer 92 or the holding material 93.
  • Tsap / Tphos obtained by dividing the film thickness Tsap of the holding material 93 by the film thickness Tphos of the phosphor layer 92 is 50, 30, 20, 10, and 5
  • the temperature of the phosphor layer 92 is 170 ° C., respectively. It became 142 degreeC, 128 degreeC, 122 degreeC, and 115 degreeC.
  • the temperature of the holding material 93 was 61 ° C., 62 ° C., 62 ° C., 60 ° C. and 57 ° C., respectively.
  • FIG. 16 shows the ratio of the volume of the holding material 93 to the volume of the phosphor layer 92 when the vertical length L and the horizontal length L of the holding material 93 are 40 mm and the film thickness Tsap is changed. It is a graph which shows the relationship with the temperature of the fluorescent substance layer 92 or the holding material 93.
  • the temperatures of the phosphor layer 92 are 170 ° C., 142 ° C., 128 ° C., 122, respectively. And 115 ° C.
  • the temperatures of the holding material 93 are 61 ° C., 62 ° C., 62 ° C., respectively. It became 60 degreeC and 57 degreeC.
  • the temperature of the phosphor layer 92 can be significantly reduced. As a result, at least one of light emission efficiency and reliability can be improved.
  • the wavelength conversion member of the present disclosure can be used for a light source such as special illumination, a head-up display, a projector, and a vehicle headlamp.

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Abstract

L'invention concerne un élément (10A) de conversion de longueur d'onde qui comporte : une couche (12) de matériau fluorescent, qui convertit la lumière émise par un élément (11) électroluminescent à semi-conducteur en une lumière à plus grande longueur d'onde ; et un matériau (13) de maintien qui transmet la lumière possédant une longueur d'onde de la lumière émise par la couche (12) de matériau fluorescent. Le matériau (13) de maintien est disposé de telle sorte que le matériau de maintien entoure une surface de la couche (12) de matériau fluorescent qui croise une surface de couche de matériau fluorescent à partir de laquelle pénètre la lumière émise par l'élément (11) électroluminescent à semi-conducteur.
PCT/JP2014/003033 2013-06-21 2014-06-06 Elément de conversion de longueur d'onde, source de lumière et lampe WO2014203488A1 (fr)

Applications Claiming Priority (2)

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JP2013-130619 2013-06-21
JP2013130619A JP2016154063A (ja) 2013-06-21 2013-06-21 波長変換部材、光源、及びランプ

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WO2014203488A1 true WO2014203488A1 (fr) 2014-12-24

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CN105789414A (zh) * 2015-01-14 2016-07-20 Lg伊诺特有限公司 发光装置
CN107960115A (zh) * 2015-04-20 2018-04-24 夏普株式会社 照明装置、显示装置以及电视接收装置
WO2018116525A1 (fr) 2016-12-19 2018-06-28 日本碍子株式会社 Élément luminophore et dispositif d'éclairage
US10060580B2 (en) 2014-09-24 2018-08-28 Sharp Kabushiki Kaisha Light emitting device
WO2019159462A1 (fr) * 2018-02-16 2019-08-22 凸版印刷株式会社 Dispositif d'éclairage
US11016233B2 (en) 2017-11-21 2021-05-25 Ngk Insulators, Ltd. Optical waveguide structure, phosphor element, and method for manufacturing optical waveguide structure

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EP3309446A1 (fr) * 2016-10-17 2018-04-18 Lumileds Holding B.V. Dispositif de conversion de lumière avec convertisseur de lumière encastré
JP6737150B2 (ja) * 2016-11-28 2020-08-05 セイコーエプソン株式会社 波長変換素子、光源装置及びプロジェクター
US10883687B2 (en) * 2016-12-16 2021-01-05 Lumileds Llc Light conversion device with angular and wavelength selective coating
WO2019031102A1 (fr) * 2017-08-07 2019-02-14 パナソニックＩｐマネジメント株式会社 Élément de conversion de longueur d'onde, dispositif d'émission de lumière et dispositif d'éclairage

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JP2004354495A (ja) * 2003-05-27 2004-12-16 Nec Viewtechnology Ltd 光源装置
WO2007105647A1 (fr) * 2006-03-10 2007-09-20 Nichia Corporation Dispositif electroluminescent
JP2011154995A (ja) * 2009-12-28 2011-08-11 Sharp Corp 照明装置
JP2013084470A (ja) * 2011-10-11 2013-05-09 Olympus Corp 光源装置

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2004354495A (ja) * 2003-05-27 2004-12-16 Nec Viewtechnology Ltd 光源装置
WO2007105647A1 (fr) * 2006-03-10 2007-09-20 Nichia Corporation Dispositif electroluminescent
JP2011154995A (ja) * 2009-12-28 2011-08-11 Sharp Corp 照明装置
JP2013084470A (ja) * 2011-10-11 2013-05-09 Olympus Corp 光源装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10060580B2 (en) 2014-09-24 2018-08-28 Sharp Kabushiki Kaisha Light emitting device
EP3046154A1 (fr) * 2015-01-14 2016-07-20 LG Innotek Co., Ltd. Appareil électroluminescent
US9903562B2 (en) 2015-01-14 2018-02-27 Lg Innotek Co., Ltd. Light emitting apparatus
CN105789414B (zh) * 2015-01-14 2019-08-02 Lg伊诺特有限公司 发光装置
CN105789414A (zh) * 2015-01-14 2016-07-20 Lg伊诺特有限公司 发光装置
EP3287689A4 (fr) * 2015-04-20 2018-11-21 Sharp Kabushiki Kaisha Dispositif d'éclairage, dispositif d'affichage et dispositif de réception de télévision
CN107960115A (zh) * 2015-04-20 2018-04-24 夏普株式会社 照明装置、显示装置以及电视接收装置
WO2018116525A1 (fr) 2016-12-19 2018-06-28 日本碍子株式会社 Élément luminophore et dispositif d'éclairage
US10859747B2 (en) 2016-12-19 2020-12-08 Ngk Insulators, Ltd. Phosphor element and illumination device
US11016233B2 (en) 2017-11-21 2021-05-25 Ngk Insulators, Ltd. Optical waveguide structure, phosphor element, and method for manufacturing optical waveguide structure
WO2019159462A1 (fr) * 2018-02-16 2019-08-22 凸版印刷株式会社 Dispositif d'éclairage
US11079095B2 (en) 2018-02-16 2021-08-03 Toppan Printing Co., Ltd. Lighting apparatus
EP3754247A4 (fr) * 2018-02-16 2021-11-03 Toppan Printing Co., Ltd. Dispositif d'éclairage

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