WO2014194637A1 - 阵列基板、液晶显示面板及显示装置 - Google Patents

阵列基板、液晶显示面板及显示装置 Download PDF

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Publication number
WO2014194637A1
WO2014194637A1 PCT/CN2013/089462 CN2013089462W WO2014194637A1 WO 2014194637 A1 WO2014194637 A1 WO 2014194637A1 CN 2013089462 W CN2013089462 W CN 2013089462W WO 2014194637 A1 WO2014194637 A1 WO 2014194637A1
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Prior art keywords
electroluminescent
layer
array substrate
electroluminescent device
liquid crystal
Prior art date
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Ceased
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PCT/CN2013/089462
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English (en)
French (fr)
Inventor
郭仁炜
董学
张财政
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Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Publication of WO2014194637A1 publication Critical patent/WO2014194637A1/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133612—Electrical details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements

Definitions

  • Embodiments of the present invention relate to an array substrate, a liquid crystal display panel, and a display device. Background technique
  • liquid crystal displays with lightness, thinness, low power consumption, high brightness and high display quality have been pursued.
  • the existing liquid crystal display mainly includes a liquid crystal display panel 80 and a backlight module 90; the backlight module 90 is located on the light incident side of the liquid crystal display panel 80;
  • the liquid crystal display panel 80 mainly includes a color film substrate 801 and an array substrate 802 disposed opposite to each other, and a liquid crystal layer 803 filled between the color film substrate 801 and the array substrate 802;
  • the backlight module 90 includes at least a light source, a back plate, an optical film, and the like.
  • the backlight module includes an edge light type and a direct type according to the position where the light source is disposed.
  • the edge-lit backlight module will be described as an example below.
  • the backlight module 90 mainly includes a back plate 901 , a bottom reflection plate 902 located above the back plate 901 , a light guide plate 903 located above the bottom reflection plate 902 , an optical film 904 located above the light guide plate 903 , and a light guide plate 903 side end light source 905.
  • the backlight module provides a light source for the liquid crystal display panel.
  • the thickness of each layer structure (such as the back plate, the bottom reflector, the light guide plate, the optical film layer, etc.) in the backlight module has a fixed specification, and the backlight module assembled from each layer realizes a light and thin liquid crystal display having a certain thickness. limitation.
  • the backlight module is independent of the liquid crystal display panel, and the assembly is complicated and heavy, which is not conducive to the realization of a liquid crystal display having the advantages of lightness and thinness. Summary of the invention
  • An array substrate provided by an embodiment of the invention includes a substrate substrate, a thin film transistor pixel array located above the substrate substrate, and one or more electro-electrodes between the thin film transistor pixel array and the substrate a light emitting device, wherein the electroluminescent device corresponds to a region where the thin film transistor pixel array is located; and the electroluminescent device and the thin film transistor pixel array are transparent
  • the insulating layer is insulated.
  • the overall light emitting area of the electroluminescent device overlaps the pixel display area of the array substrate.
  • the electroluminescent device is an electroluminescent device that emits white light.
  • the plurality of electroluminescent devices are disposed in the same layer, and the spacing between any two adjacent of the electroluminescent devices is less than 100 microns, preferably less than 60 microns.
  • the plurality of electroluminescent devices are mutually parallel strip structures extending along opposite ends of the substrate substrate.
  • the electroluminescent device includes oppositely disposed cathodes and anodes, and an electroluminescent layer between the anode and cathode, the cathode, electroluminescent layer and anode being disposed in a stacked manner On the base substrate.
  • the array substrate further includes: a plurality of switching transistors connected to the respective electroluminescent devices in a one-to-one correspondence between the transparent insulating layer and the substrate; wherein An anode of the electroluminescent device is connected to a drain of the switching transistor, a cathode of the electroluminescent device is connected to a first power supply; or an anode of the electroluminescent device is connected to the first power supply, A cathode of the electroluminescent device is coupled to a drain of the switching transistor.
  • each of the switching transistors is located on the same side of each of the electroluminescent devices; the array substrate further includes: a gate line connected to a gate of each switching transistor, and a source of each switching transistor A connected data line that is connected to the second power supply.
  • the electroluminescent layer is an integral electroluminescent layer or an electroluminescent layer comprised of a plurality of mutually independent electroluminescent layer units having a patterned pattern.
  • the setting pattern of the electroluminescent layer unit is one or more of a rectangle, a diamond, a circle, a triangle, and a trapezoid.
  • the electroluminescent device further includes an electron injection layer and an electron transport layer between the cathode and the electroluminescent layer, and between the anode and the electroluminescent layer. a hole injection layer and a hole transport layer.
  • Another embodiment of the present invention provides a liquid crystal display panel comprising any of the above array substrate, a counter substrate, and a liquid crystal layer between the opposite substrate and the array substrate.
  • the opposite substrate is a color film substrate.
  • a further embodiment of the present invention provides a display device comprising the above liquid crystal display panel and a driving circuit for driving the liquid crystal display panel to realize image display.
  • FIG. 1 is a schematic structural view of a conventional liquid crystal display
  • FIG. 2 is a schematic top view of an array substrate according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of the array substrate shown in FIG. 2 taken along line A-A;
  • FIG. 4 is a top plan view of the array substrate including the switching transistors in one-to-one correspondence with the electroluminescent device shown in FIG. 2;
  • Figure 5 is a cross-sectional view of the array substrate shown in Figure 4 taken along line A-A;
  • FIG. 6 is a schematic view showing a pattern of an electroluminescent layer unit in an electroluminescent layer according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram showing the structure of an electroluminescent layer composed of rectangular electroluminescent layer units according to an embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of an electroluminescent layer composed of a triangular-shaped electroluminescent layer unit according to an embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of an array substrate according to an embodiment of the present invention.
  • FIG. 10 to FIG. 19 are schematic cross-sectional views of an array substrate according to an embodiment of the present invention at different stages of fabrication. detailed description
  • Embodiments of the present invention provide an array substrate, a liquid crystal display panel, and a display device for implementing A liquid crystal display panel and a display device having a single structure and a thin structure.
  • the display device provided by the embodiment of the invention may be a liquid crystal display or a liquid crystal television or the like.
  • the liquid crystal display or the liquid crystal television is mainly composed of a liquid crystal display panel and a driving circuit for driving the liquid crystal display panel to realize image display, and an electroluminescent device provided with a backlight provided in the liquid crystal display panel is substituted for the existing backlight module, thereby realizing a A liquid crystal display panel that provides backlighting.
  • an electroluminescent device is embedded in an array substrate of a liquid crystal display panel to realize a backlight in-cell type (In cell type) liquid crystal display panel.
  • the structure of the liquid crystal display panel is simple, light and thin, and can provide a backlight. Accordingly, the display device including the liquid crystal display panel has a single structure and is light and thin.
  • the electroluminescent device provided by the embodiment of the invention is a surface light source, and the surface light source is located in the pixel display area of the array substrate covering the entire array substrate, and provides backlight for the liquid crystal display panel.
  • the electroluminescent device is of a stacked structure, and the electroluminescent device comprises at least: an oppositely disposed anode and cathode, an electroluminescent layer between the anode and the cathode; energizing the anode and the cathode, and carrying the anode
  • the carrier electrons of the hole and the cathode are injected into the electroluminescent layer from the anode and the cathode, respectively, and the excitons are formed in the electroluminescent layer, the excitons are excited, and the excitons are quickly repulsed back to the ground state, and the excitation is repulsed.
  • the radiated energy excites the electroluminescent layer to emit light. That is, the electroluminescent device is turned on (light
  • FIG. 2 is a schematic top view of an array substrate according to an embodiment of the invention.
  • the array substrate includes a substrate substrate 1; a thin film transistor pixel array (not shown in FIG. 2) on the substrate substrate 1; one or more layers disposed between the substrate substrate 1 and the pixel array
  • An electroluminescent device 11 emitting white light, the electroluminescent device 11 corresponding to the region in which the pixel array is located; and a transparent insulating layer between the electroluminescent device 11 and the pixel array.
  • the electroluminescent device 11 is used to provide backlight for the liquid crystal display panel, and the light emitted by the electroluminescent device 11 can be smoothly emitted to the thin film transistor pixel array for display, and thus the insulation between the electroluminescent device 11 and the thin film transistor pixel array.
  • the layer is a transparent insulating layer, for example, the transparent insulating layer may be a silicon oxide (SiOx) layer or a silicon nitride (SiNx) layer.
  • the array substrate shown in FIG. 2 is AA, the cross-sectional view of the line is shown in Figure 3.
  • the electroluminescent device 11 is located above the substrate 1; the insulating layer 13 is located above the electroluminescent device 11;
  • the thin film transistor pixel array 14 is located above the insulating layer 13.
  • the electroluminescent device comprises at least a cathode and an anode disposed oppositely and an electroluminescent layer between the cathode and the anode, the cathode, the anode and the electroluminescent layer being disposed in a stacked manner.
  • the cathode 111 of the electroluminescent device 11 is located above the substrate substrate 1
  • the electroluminescent layer 113 is located above the cathode 111
  • the anode 112 is located at the electroluminescent layer 113.
  • the arrangement of the anode and the cathode on the substrate can be interchanged, and correspondingly, the driving connection mode needs to be adjusted accordingly.
  • the functional film layer on the electroluminescent layer 113 ie, the side away from the substrate 1 needs to be set to be transparent or translucent.
  • the anode above the electroluminescent layer 113 is a transparent metal oxide film layer, or the cathode above the electroluminescent layer 113 is a translucent metal (for example, its transmittance is greater than 80%), of course, at the cathode 111
  • the electroluminescent layer 113 between the anode and the anode 112 there may be other auxiliary layers which are also required to be transparent as long as they are located above the electroluminescent layer 113.
  • the array substrate provided in Figure 3 is intended to illustrate the invention and is not intended to limit the invention.
  • the transparent metal oxide film layer may be, but not limited to, indium tin oxide ITO or indium oxide oxide IZO.
  • the array substrate shown in Figures 2 and 3 is an array substrate capable of providing backlights according to an embodiment of the present invention.
  • the anode 112 and the cathode 111 of the electroluminescent device 11 are energized to achieve electroluminescence.
  • the arrows in Fig. 3 indicate the light emitted from the electroluminescent device 11.
  • the array substrate provided by the embodiment of the present invention can provide a backlight, and realizes providing a backlight only by a backlight source (electroluminescence device) embedded in the array substrate, so that the liquid crystal display panel formed by using the array substrate
  • the structure is more compact and lighter.
  • the electroluminescent device disposed in the array substrate is located between the pixel transistor pixel array and the substrate, and the electric field formed between the cathode and the anode of the electroluminescent device does not affect the pixel electrode and the common electrode in the pixel transistor pixel array.
  • the electric field formed between the two that is, the electroluminescent device does not affect the array substrate and the color filter substrate
  • the deflection of the liquid crystal molecules between the two realizes a liquid crystal display panel having a better display effect and a backlight effect.
  • the light-emitting area of the electroluminescent device provided by the embodiment of the present invention is determined by the area of the electroluminescent layer, the cathode and the anode. Generally, the pattern and area of the cathode, anode and electroluminescent layer are identical, and the area of illumination of the electroluminescent device is determined, for example, by the coverage area of the electroluminescent layer.
  • the electroluminescent device has the advantages of large light-emitting area, high luminous efficiency, and luminous brightness.
  • the luminescent color of the electroluminescent device is mainly determined by the material of the electroluminescent layer, and when the electroluminescent layer is made of a material that emits white light, the electroluminescent layer emits white light.
  • it is also possible to respectively emit light of a corresponding color by setting an electroluminescent layer that emits red light, green light, and blue light, and obtain white light by mixing light.
  • Such a structure requires a small area of each of the electroluminescent layers emitting red, green and blue light, which is advantageous for uniform light mixing.
  • the embodiment of the invention is described by taking an electroluminescent layer that emits white light as an example.
  • An electroluminescent device may be disposed in the array substrate, or a plurality of electroluminescence may be disposed.
  • the cathode, the anode, and the cathode and the anode of the electroluminescent device are stacked.
  • the electroluminescent layer between them covers, for example, the entire substrate substrate, or at least covers the pixel display area of the entire array substrate.
  • the illuminating area of the electroluminescent device is, for example, approximately equal to the area of the entire substrate.
  • the sum of the light-emitting area regions of the respective electroluminescent devices coincides with at least the pixel display regions of the entire array substrate.
  • the sum of the light emitting areas of the respective electroluminescent devices is approximately equal to the area of the substrate.
  • each of the electroluminescent devices is distributed over different regions of the substrate, covering the entire substrate. Each of the electroluminescent devices is energized separately, causing each of the electroluminescent devices to be turned on (illuminated), respectively, to stop energizing an electroluminescent device, and the electroluminescent device is turned off (not emitting light).
  • a plurality of electroluminescent devices may be disposed in the array substrate provided by the embodiments of the present invention. Four electroluminescent devices are disposed in the array substrate as shown in FIG.
  • Each electroluminescent device can be of any regular pattern of suitable size.
  • each of the electroluminescent devices is a mutually parallel strip-shaped electroluminescent device extending along opposite ends of the substrate substrate 1.
  • the spacing between any two adjacent electroluminescent devices is less than 100 microns. Or, the spacing between any two adjacent electroluminescent devices Less than 60 microns.
  • the electroluminescent devices are identical in shape and size, and when the respective electroluminescent devices are simultaneously activated, the same voltage can be applied to the anodes of the respective electroluminescent devices, applying the same to the cathodes of the respective electroluminescent devices.
  • the voltage is a backlight that achieves uniform illumination brightness of each of the light-emitting devices.
  • each odd-numbered electroluminescent device is turned on, and each even-numbered row of electroluminescent devices is turned off.
  • only a part of the electroluminescent device can be turned on and another electroluminescent device can be turned off under the premise that the brightness is satisfactory.
  • each odd row of electroluminescent devices is turned off and the even rows of electroluminescent devices are turned on. This can double the life of each electroluminescent device.
  • the array substrate provided by the embodiment of the present invention further includes a plurality of switching TFTs 12 correspondingly connected to the respective electroluminescent devices.
  • the light-emitting transistor TFT12 controls the electroluminescent device 11 connected thereto to be turned on or off.
  • each switch TFT 12 is located at one end of each electroluminescent device; each switch
  • the TFT 12 controls its opening or closing by a gate line and a data line.
  • each of the switches TFT12 is located at the same end of each of the electroluminescent devices 11, and each of the switches TFT12 is controlled to be turned on or off by a different gate line 15 and the same data line 16.
  • each TFT 12 is connected to a plurality of gate lines 15, the source is connected to the data line 16, and the drain is connected to the anode of the plurality of electroluminescent devices 11; each electroluminescent device 11 The cathode is connected to a first power supply capable of providing a constant voltage, the data line 16 is connected to the second power supply; or the drain is connected to the cathode of the plurality of electroluminescent devices 11, the anode of each electroluminescent device 11 Connected to a first power supply that provides a constant voltage, the data line 16 is coupled to a second power supply.
  • the gate line 15 connected to the electroluminescent device 11 is controlled to input a gate voltage Vg that enables the TFT 12 to be turned on for the TFT 12 corresponding to the gate line 15.
  • the second power supply inputs an anode (or cathode) voltage VI to the TFT 12 through the data line 16 (the anode voltage is input when the drain is connected to the anode, and the cathode voltage is input when the drain is connected to the cathode).
  • TFT12 is turned on, voltage VI is applied to the anode (or cathode), and the first power supply is the cathode (or anode)
  • the applied voltage V2, I VI - V2 I is greater than the threshold voltage of the electroluminescent device 11, the electroluminescent device 11 is turned on (i.e., illuminated).
  • the gate line input voltage Vg corresponding to the electroluminescent device is stopped, the TFT 12 connected to the gate line is turned off, and the electroluminescent device 11 is turned off (i.e., the light is stopped).
  • the gate lines and the data lines connected to the electroluminescent device and the gate lines and the data lines involved in the pixel array of the thin film transistor are different (ie, not shared), and the embodiment and the The gate lines and data lines connected to the electroluminescent device are only used to control the mutually intersecting signal lines provided by the backlight of the electroluminescent device to form part of the backlight driving circuit.
  • Figure 5 is a cross-sectional view of the array substrate shown in Figure 4 taken along line A-A.
  • the structure of the array substrate shown in Fig. 4 will be further described below with reference to Fig. 5.
  • the TFT 12 is located on one side of the electroluminescent device 11; the TFT 12 is located between the substrate 1 and the insulating layer 13; the TFT 12 includes at least a gate 121, a gate insulating layer 122, a source 123 and a drain 124, and a semiconductor layer 125; The drain 124 of the TFT 12 is connected to the cathode 111 of the electroluminescent device 11.
  • the TFT 12 shown in FIG. 5 is schematically illustrated by using a top gate type thin film transistor structure as an example.
  • the cathode 111 of the electroluminescent device 11 is located on the base substrate 1, and the drain 124 of the TFT 12 and the electroluminescent device are shown.
  • the cathode 111 of 11 is connected.
  • the TFT 12 can also be formed as a bottom-gate thin film transistor.
  • the electroluminescent device 11 can also be formed such that the anode is located on the substrate, and the drain electrode 124 of the TFT 12 is connected to the anode of the electroluminescent device 11, which is not specifically limited.
  • the electroluminescent layer in each electroluminescent device can be composed of an electroluminescent layer without any pattern (ie consisting of an integral electroluminescent layer), for example a pattern of electroluminescent layers such as 2 and 4, the electroluminescent layer is composed of an integrated light-emitting layer; the electroluminescent layer in each electroluminescent device can also be composed of a plurality of mutually independent electroluminescences having a set pattern.
  • the layer unit is composed of, and the electroluminescent layer unit may be a regular or irregular pattern, and may be, for example, one or more of a rectangle, a diamond, a circle, a triangle, a trapezoid, and the like as shown in FIG. 6.
  • the electroluminescent layer consists of a plurality of mutually independent rectangular electroluminescent layer units 118 as shown in FIG. 7, or a plurality of mutually independent triangular electroluminescent layer units 118 as shown in FIG.
  • the electroluminescent layer units 118 are disposed opposite each other.
  • Independent electroluminescent layer The gap between the elements 118 is small, ensuring that the uniformity of the brightness of the pixel areas on the array substrate is not affected.
  • the patterns of the electroluminescent layers shown in Figures 6 through 8 are for illustrative purposes only and are not intended to limit the embodiments of the present invention.
  • the electroluminescent device 11 further includes: a cathode 111 and an electroluminescent layer 113.
  • An electron transport layer 114 is disposed between the hole transport layer 115 between the anode 112 and the electroluminescent layer 113.
  • the hole transport layer 115 can increase the transport rate of holes, and the electron transport layer 114 can increase the electron transport rate, thereby increasing the recombination probability of electrons and holes in the electroluminescent layer, and improving the luminous efficiency of the electroluminescent device.
  • the cathode 111 and the anode 112 shown in Fig. 9 are interchangeable.
  • the electron transport layer 114 and the hole transport layer 115 also need to be interchanged.
  • the structure of the electroluminescent device comprises an anode, a hole transport layer, an electroluminescent layer, an electron transport layer and a cathode which are sequentially distributed from top to bottom, or a cathode, an electron transport layer which is sequentially distributed from top to bottom, An electroluminescent layer, a hole transport layer and an anode.
  • the light-emitting layer, the electron transport layer, and the cathode may, for example, further include a hole blocking layer between the cathode and the electron transport layer, and/or an electron blocking layer between the anode and the hole transport layer to achieve enhanced electron and space
  • the electroluminescent device 11 may further include any film layer which can improve the luminous efficiency of the electroluminescent device, and for example, may further include an electron injecting layer and a hole injecting layer (not shown), and the electron injecting layer is located at the cathode and the electron Between the transport layers, a hole injection layer is located between the anode and the hole transport layer. I won't go into details here.
  • the anode may be a transparent conductive film layer, for example, an indium tin oxide ITO or an indium oxide oxide IZO film layer, and the cathode may be a metal or an alloy such as aluminum or molybdenum.
  • the electroluminescent layer is a white light-emitting electroluminescent layer formed of an organic electroluminescent material, or a white-emitting electroluminescent layer formed of a quantum electroluminescent material.
  • the electroluminescent layer is a white light-emitting electroluminescent layer formed of a quantum dot electroluminescent material
  • the quantum dot electroluminescent material includes quantum dots capable of generating three colors of red, green and blue to achieve the effect of emitting white light.
  • the insulation between the electroluminescent device 11 and the TFT pixel array 14 in the array substrate shown in FIG. Layer 13 is a flat layer.
  • the switching TFT 12 that controls the electroluminescent device 11 to emit light as shown in FIG. 4 may It is thought that the top gate type TFT can also be a bottom gate type TFT. In the array substrate shown in FIG. 4, the switching TFT 12 is a top gate type TFT.
  • Step 1 A switch TFT and an electroluminescent device connected to the switch TFT are fabricated on the substrate.
  • Step 2 A pixel array for realizing image display is formed in the above-described switch TFT.
  • the above step 1 may include the following steps, for example:
  • Step 101 depositing an amorphous silicon film (a-Si) on a base substrate (for example, a glass substrate) by using a film forming process, and referring to FIG. 10, forming an amorphous region in a region near the side end of the glass substrate 1 by a patterning process Silicon layer 120.
  • a-Si amorphous silicon film
  • Step 102 depositing an insulating film on the glass substrate 1 shown in FIG. 10 by using a film forming process, and the insulating film may be a silicon nitride protective film SiNx, and forming an amorphous silicon layer 120 as shown in FIG. 11 by a patterning process.
  • the upper surface of the gate insulating layer 122 and the gate insulating layer 122 is smaller than the area of the amorphous silicon layer 120, for example, to ensure that both sides of the amorphous silicon layer 120 are exposed.
  • Step 103 depositing a metal thin film on the glass substrate 1 shown in FIG. 11 by using a film forming process.
  • a gate electrode 121 on the gate insulating layer 122 is formed by a patterning process.
  • Step 104 ion implantation is performed on a region exposed on both sides of the amorphous silicon layer 120. Referring to FIG. 13, a source 123 and a drain 124 and a semiconductor layer 125 are formed.
  • Step 105 forming source and gate leads and gate lines and data lines (not shown in the drawings) on the glass substrate by a sputtering method.
  • the gate line and the data line are the signal lines of the backlight driving circuit, and are independent of the gate lines and the data lines in the thin film transistor pixel array to be formed later.
  • Step 106 Referring to Figure 14, an aluminum or molybdenum film in contact with the drain is sputtered on the glass substrate, and a cathode 111 corresponding to each electroluminescent device is formed by a patterning process.
  • Step 107 referring to FIG. 15, depositing an electron transport layer 114 on the cathode 111, the electron transport layer
  • the electron transport layer 114 is insulated from the gate electrode 121, the source electrode 123, and the semiconductor layer 125, and the electron transport layer 114 covers only a portion of the cathode 111.
  • Step 108 Referring to FIG. 16, an electroluminescent layer 113 is deposited on the electron transport layer 114, and the electroluminescent layer 113 covers only the region where the electron transport layer 114 is located.
  • Step 109 referring to FIG. 17, depositing a hole transport layer 115 on the electroluminescent layer 113, the cavity
  • the transport layer 115 covers only the area where the electroluminescent layer 113 is located.
  • Step 110 Referring to Fig. 18, an anode 112 is deposited on the hole transport layer 115, and the anode 112 covers the region where the hole transport layer 115 is located.
  • Step 111 Referring to Fig. 19, an insulating resin layer is applied over the entire glass substrate 1 as a transparent insulating layer 13.
  • Step 112. The array substrate formed by forming the pixel array 14 on the glass substrate 1 shown in Fig. 19 is, for example, as shown in Fig. 9.
  • the backlight is provided by an electroluminescent device formed by lamination deposition, thereby flexibly preparing a liquid crystal display panel having a backlight function.
  • the liquid crystal display panel mainly includes the array substrate provided by any one of the above embodiments of the present invention, the opposite substrate disposed opposite the array substrate, and the liquid crystal layer between the opposite substrate and the array substrate.
  • the opposite substrate may be a color filter substrate on which a color filter is formed.
  • the color filter is not formed on the opposite substrate but is formed on the array substrate, that is, in this case, the array substrate is formed with a TFT pixel array and color filter simultaneously. sheet.
  • the electrons of the cathode and the holes of the anode are respectively injected into the electroluminescent layer under the action of an electric field to excite the electroluminescent layer covering the entire substrate to emit light.
  • the light emitted by the electroluminescent device is ejected, and the light of different gray scales is generated by the deflection of the liquid crystal molecules to be projected onto the color filter substrate disposed opposite to the array substrate, and is filtered by the color filter layer in the color filter substrate.
  • the light-emitting side of the liquid crystal display panel forms a color display.
  • Another embodiment of the present invention further provides a display device including the above liquid crystal display panel and a driving circuit for driving the liquid crystal display panel to realize image display.
  • the display device may be a liquid crystal display or a liquid crystal television or the like.
  • the thicknesses and relative sizes of the film layers in the drawings of the embodiments of the present invention do not represent actual thicknesses and relative sizes, and the purpose is to schematically illustrate the present invention.
  • the terms "above” and “below” mentioned in the embodiments of the present invention are merely illustrative of the upper and lower positional relationship of the two film layers, and the two film layers may be in direct contact or may have an insertion member therebetween.
  • a backlight in-cell (In cell type) liquid crystal display panel is realized by embedding an electroluminescent device in an array substrate of a liquid crystal display panel.
  • Electroluminescent device replaces the conventional complicated backlight module, and realizes a liquid crystal display panel with a structure that is simple and light, and provides a backlight. Accordingly, the display device including the liquid crystal display panel has a single and thin structure.

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Abstract

提供一种阵列基板、液晶显示面板及显示装置。阵列基板包括：衬底基板（1）、位于衬底基板（1）上方的薄膜晶体管像素阵列（14）、以及位于薄膜晶体管像素阵列（14）和衬底基板（1）之间的一个或多个电致发光器件（11），电致发光器件（11）对应薄膜晶体管像素阵列（14）所在区域；且电致发光器件（11）与薄膜晶体管像素阵列（14）通过透明绝缘层（13）相绝缘。

Description

阵列基板、 液晶显示面板及显示装置 技术领域
本发明实施例涉及阵列基板、 液晶显示面板及显示装置。 背景技术
在液晶显示领域， 轻、 薄、 低功耗、 高亮度和高显示品质的液晶显示器 一直是追求的目标。
参见图 1 ,现有液晶显示器主要包括液晶显示面板 80和背光模组 90; 背 光模组 90位于液晶显示面板 80的入光侧；
液晶显示面板 80主要包括相对设置的彩膜基板 801和阵列基板 802, 以 及填充于彩膜基板 801和阵列基板 802之间的液晶层 803;
所述背光模组 90至少包括光源、 背板、 光学膜材等结构。 背光模组按照 光源的设置位置不同包括侧光式和直下式。 以下将以侧光式背光模组为例说 明。
参见图 1 , 背光模组 90主要包括背板 901 , 位于背板 901上方的底反射 板 902、位于底反射板 902上方的导光板 903、位于导光板 903上方的光学膜 材 904、 位于导光板 903侧端的光源 905。
所述背光模组为液晶显示面板提供光源。所述背光模组中的各层结构（如 背板、 底反射板、 导光板、 光学膜层等） 的厚度具有固定规格， 由各层组装 而成的背光模组实现轻薄化液晶显示器具有一定局限性。 背光模组独立于所 述液晶显示面板， 组装复杂且重量较重， 不利于实现具备轻、 薄等优点的液 晶显示器。 发明内容
本发明实施例提供的阵列基板， 包括衬底基板、 位于所述衬底基板上方 的薄膜晶体管像素阵列， 以及位于所述薄膜晶体管像素阵列和所述衬底基板 之间的一个或多个电致发光器件， 所述电致发光器件对应所述薄膜晶体管像 素阵列所在区域； 且所述电致发光器件与所述薄膜晶体管像素阵列通过透明 绝缘层相绝缘。
在一个示例中， 所述电致发光器件的总体发光区域与所述阵列基板的像 素显示区域相互重叠。
在一个示例中， 所述电致发光器件为发射白光的电致发光器件。
在一个示例中， 所述多个电致发光器件同层设置， 且任意两个相邻所述 电致发光器件之间的间隔小于 100微米， 优选地， 小于 60微米。
在一个示例中， 所述多个电致发光器件为沿所述衬底基板的相对的两端 延伸的相互平行的条状结构。
在一个示例中， 所述电致发光器件包括相对设置的阴极和阳极， 以及位 于所述阳极和阴极之间的电致发光层， 所述阴极、 电致发光层和阳极以叠层 的方式设置在所述衬底基板上。
在一个示例中， 所述阵列基板还包括： 位于所述透明绝缘层与所述衬底 基板之间的与所述各电致发光器件一一对应相连的多个开关晶体管； 其中， 所述电致发光器件的阳极与所述开关晶体管的漏极相连， 所述电致发光器件 的阴极与第一供电电源相连； 或者所述电致发光器件的阳极与所述第一供电 电源相连， 所述电致发光器件的阴极与所述开关晶体管的漏极相连。
在一个示例中， 所述各开关晶体管位于所述各电致发光器件的同一侧； 所述阵列基板还包括： 与每一开关晶体管的栅极相连的栅线， 以及与各开关 晶体管的源极相连的数据线， 该数据线与第二供电电源相连。 致发光层， 或量子点电致发光材料形成的发白光的电致发光层。
在一个示例中， 所述电致发光层为一体的电致发光层或由多个相互独立 的具有设定图案的电致发光层单元组成的电致发光层。
在一个示例中， 所述电致发光层单元的设定图案为矩形、 菱形、 圓形、 三角形、 梯形中的一种或几种。
在一个示例中， 所述电致发光器件还包括位于所述阴极与所述电致发光 层之间的电子注入层和电子传输层， 以及位于所述阳极与所述电致发光层之 间的空穴注入层和空穴传输层。
本发明的另一实施例提供一种液晶显示面板， 包括以上所述任一项阵列 基板、 对置基板， 以及位于所述对置基板和阵列基板之间的液晶层。 在一个示例中， 所述对置基板为彩膜基板。
本发明的又一实施例提供一种显示装置， 包括上述的液晶显示面板和驱 动该液晶显示面板实现图像显示的驱动电路。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例或现有技 术描述中所需要使用的附图作筒单地介绍， 显而易见地， 下面描述中的附图 仅仅涉及本发明的一些实施例， 并非对本发明的限制。
图 1为现有液晶显示器结构示意图；
图 2为本发明实施例提供的阵列基板俯视示意图；
图 3为图 2所示的阵列基板在 A-A，线的截面图；
图 4为图 2所示的包括有与电致发光器件一一对应的开关晶体管的阵列 基板俯视示意图；
图 5为图 4所示的阵列基板在 A-A， 线的截面图；
图 6 为本发明实施例提供的电致发光层中的电致发光层单元图案示意 图；
图 7为本发明实施例提供的矩形状电致发光层单元组成的电致发光层结 构示意图；
图 8为本发明实施例提供的三角形状电致发光层单元组成的电致发光层 结构示意图；
图 9为本发明实施例提供的一种阵列基板的结构示意图；
图 10至图 19为本发明实施例提供的阵列基板在不同的制造阶段的截面 结构示意图。 具体实施方式
下面将结合附图，对本发明实施例中的技术方案进行清楚、完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而不是全部的实施例。 基于本发明中的实施例， 本领域普通技术人员在没有做出创造性劳动前提下 所获得的所有其他实施例， 都属于本发明保护的范围。
本发明实施例提供一种阵列基板、 液晶显示面板及显示装置， 用以实现 一种结构筒单且轻薄的液晶显示面板和显示装置。
本发明实施例提供的显示装置可以为液晶显示器或液晶电视等。 液晶显 示器或液晶电视主要由液晶显示面板和驱动该液晶显示面板实现图像显示的 驱动电路组成， 采用液晶显示面板中设置的可提供背光的电致发光器件替代 现有的背光模组， 实现了一种可提供背光的液晶显示面板。
例如， 电致发光器件内嵌在液晶显示面板的阵列基板中， 实现一种背光 内嵌式（In cell式） 的液晶显示面板。 液晶显示面板的结构筒单、 轻薄， 且 可提供背光， 相应地， 包括所述液晶显示面板的显示装置结构筒单且轻薄。
本发明实施例提供的所述电致发光器件为面光源， 该面光源位于阵列基 板中覆盖整个阵列基板的像素显示区域， 为液晶显示面板提供背光。 所述电致发光器件为叠层式的结构， 电致发光器件至少包括： 相对设置 的阳极和阴极，位于阳极与阴极之间的电致发光层；给所述阳极和阴极通电， 阳极的载流子空穴和阴极的载流子电子分别从阳极和阴极注入电致发光层， 在电致发光层复合形成激子，激子处于激发状态，激子很快退激发回到基态， 退激发辐射出的能量激发电致发光层发光。即电致发光器件在通电时开启（发 光） ， 在未通电时关闭 （不发光） 。
以下将通过附图具体说明本发明实施例提供的阵列基板、 液晶显示面板 和显示装置。 图 2示出本发明实施例提供的阵列基板俯视示意图。 该阵列基板包括衬 底基板 1 ; 位于衬底基板 1上的薄膜晶体管像素阵列 （图 2中未示出 ) ； 位 于衬底基板 1与所述像素阵列之间的一个或多个同层设置的发射白光的电致 发光器件 11 , 电致发光器件 11对应所述像素阵列所在区域； 以及位于电致 发光器件 11与像素阵列之间的透明绝缘层。
电致发光器件 11用于为液晶显示面板提供背光， 电致发光器件 11发出 的光线能够顺利出射至薄膜晶体管像素阵列用于显示， 因此位于电致发光器 件 11和薄膜晶体管像素阵列之间的绝缘层为透明绝缘层，例如该透明绝缘层 可以为氧化硅（SiOx )层或者氮化硅 (SiNx)层。
为了更清楚地说明图 2所示的阵列基板的结构， 图 2所示的阵列基板在 A-A， 线的截面图如图 3所示。
电致发光器件 11位于衬底基板 1之上；绝缘层 13位于电致发光器件 11 之上；
薄膜晶体管像素阵列 14位于绝缘层 13之上。
在一个示例中， 电致发光器件至少包括相对设置的阴极和阳极以及位于 阴极和阳极之间的电致发光层， 阴极、阳极和电致发光层以叠层的方式设置。
在一个示例中在一个示例中， 如图 3所示， 电致发光器件 11的阴极 111 位于衬底基板 1之上， 电致发光层 113位于阴极 111之上， 阳极 112位于电 致发光层 113之上。
需要说明的是， 阳极和阴极在基板上的设置方式可以互换， 对应的， 其 驱动连接方式需要做相应的调整。 同时，为了使得电致发光器件 11发出的光 线能够为液晶显示面板提供背光， 位于电致发光层 113之上（即远离衬底基 板 1的一侧 ) 的功能膜层需要设置为透明或半透明， 如电致发光层 113之上 的阳极为透明金属氧化物膜层， 或者电致发光层 113之上的阴极为半透明的 金属 (例如， 其透过率大于 80% ) , 当然在阴极 111和阳极 112之间除了电 致发光层 113之外， 还可以有其他一些辅助层， 这些层只要是位于电致发光 层 113之上也需要设置为透明的。 图 3提供的阵列基板用于示意性地说明本 发明， 不用于限制本发明。
所述透明金属氧化物膜层可以但不限于为铟锡氧化物 ITO或铟辞氧化物 IZO。
图 2和图 3所示的阵列基板为本发明实施例提供的可提供背光的阵列基 板。 如图 3所示， 当液晶显示面板需要背光时， 给电致发光器件 11 的阳极 112和阴极 111通电实现电致发光。 图 3中的箭头表示电致发光器件 11发射 的光线。
由此可见， 本发明实施例提供的所述阵列基板可以提供背光， 实现了仅 通过内嵌在阵列基板中的背光光源 （电致发光器件）提供背光， 使得采用该 阵列基板形成的液晶显示面板的结构更加筒单， 更加轻便。 另外， 阵列基板 中设置的电致发光器件位于薄膜晶体管像素阵列与衬底基板之间， 电致发光 器件的阴极和阳极之间形成的电场不会影响薄膜晶体管像素阵列中像素电极 与公共电极之间形成的电场， 即电致发光器件不影响阵列基板和彩膜基板之 间的液晶分子的偏转，实现一种显示效果和背光效果均较佳的液晶显示面板。 本发明实施例提供的电致发光器件的发光面积由电致发光层、 阴极和阳 极的面积决定。 一般地， 阴极、 阳极以及电致发光层的图案和面积相一致， 电致发光器件的发光面积例如由电致发光层的覆盖面积决定。
电致发光器件具备发光面积大、 发光效率高和发光亮度均勾等优点。 电 致发光器件的发光颜色主要由电致发光层的材料决定， 当电致发光层由发白 光的材料制作而成时， 电致发光层发射白光。 当然， 也可以通过设置发射红 光、 绿光和蓝光的电致发光层分别发射对应颜色的光， 经过混光得到白光。 此种结构需要各个发射红光、 绿光和蓝光的电致发光层面积较小， 有利于混 光均匀。 本发明实施例以发射白光的电致发光层为例进行说明。
上述阵列基板中可以设置一个电致发光器件， 也可以设置多个电致发光 当在阵列基板中设置一个电致发光器件时， 电致发光器件的层叠设置的 阴极、 阳极， 以及位于阴极和阳极之间的电致发光层例如覆盖整个衬底基板， 或者至少覆盖整个阵列基板的像素显示区域。 该电致发光器件的发光面积例 如约等于整个基板的面积。
当在阵列基板中设置多个电致发光器件时， 各电致发光器件的发光面积 区域之和至少与整个阵列基板的像素显示区域重合。 在一个示例中， 各电致 发光器件的发光面积之和约等于所述衬底基板的面积。 在一个示例中， 各电 致发光器件分布在基板的不同区域， 覆盖整个基板。 分别给各电致发光器件 通电， 使得各电致发光器件分别开启 （发光） ， 停止给某一电致发光器件通 电， 电致发光器件关闭 （不发光） 。
电致发光器件在长时间使用时， 发光效率会下降、 寿命会缩短。 为了避 免在阵列基板中设置一个电致发光器件导致寿命缩短的问题,在一个示例中， 本发明实施例提供的阵列基板中例如可设置多个电致发光器件。 如图 2所示 的阵列基板中设置有四个电致发光器件。
各电致发光器件可以为合适大小的任何规则图案。
在一个示例中， 如图 2所示， 各电致发光器件为沿衬底基板 1的相对的 两端延伸的相互平行的条状电致发光器件。 例如， 任意两个相邻电致发光器 件之间的间隔小于 100微米。 或者， 任意两个相邻电致发光器件之间的间隔 小于 60微米。
在一个示例中， 各电致发光器件的形状和大小一致， 当各电致发光器件 同时启动时， 可以为各电致发光器件的阳极施加相同的电压， 为各电致发光 器件的阴极施加相同的电压， 实现各发光器件发光亮度一致的背光。
为了延长电致发光器件的寿命， 在一次图像显示过程中， 保证亮度满足 要求的前提下可以仅开启部分电致发光器件， 关闭另一部分电致发光器件。 例如各奇数行电致发光器件开启， 各偶数行电致发光器件关闭。 在下一次图 像显示过程中， 保证亮度满足要求的前提下可以仅开启部分电致发光器件， 关闭另一部分电致发光器件。 例如各奇数行电致发光器件关闭， 偶数行电致 发光器件开启。 这样可以使得每一个电致发光器件的寿命提高一倍。
在一个示例中， 为了灵活控制任一电致发光器件的开启与关闭， 参见图 4,本发明实施例提供的阵列基板，还包括与各电致发光器件——对应相连的 多个开关 TFT12, 该开光晶体管 TFT12控制与之相连的电致发光器件 11开 启或关闭。
在一个示例中， 各开关 TFT12位于每一电致发光器件的一端； 各开关
TFT12通过栅线和数据线控制其开启或关闭。
为了方便布线， 在一个示例中， 如图 4所示， 各开关 TFT12位于各电致 发光器件 11 的同一端， 各开关 TFT12通过不同的栅线 15和同一条数据线 16控制其开启或关闭。
如图 4所示， 各 TFT12的栅极与多条栅线 15相连， 源极与数据线 16相 连， 漏极与多个电致发光器件 11的阳极——对应相连； 各电致发光器件 11 的阴极与可提供恒定电压的第一供电电源相连,数据线 16与第二供电电源相 连；或者漏极与多个电致发光器件 11的阴极——对应相连，各电致发光器件 11的阳极与可提供恒定电压的第一供电电源相连， 数据线 16与第二供电电 源相连。
如图 4所示， 当需要某一电致发光器件 11开启时，控制与该电致发光器 件 11相连的栅线 15为该栅线 15对应的 TFT12输入能使 TFT12开启的栅极 电压 Vg, 第二供电电源通过数据线 16为 TFT12输入阳极 (或阴极)电压 VI (当漏极与阳极相连则输入阳极电压， 当漏极与阴极相连则输入阴极电压）。 TFT12开启， 阳极 (或阴极)上施加有电压 VI ,第一供电电源为阴极（或阳极） 施加电压 V2, I VI- V2 I大于该电致发光器件 11的阈值电压时， 该电致发 光器件 11开启 （即发光） 。
当需要某一电致发光器件关闭时， 停止为与该电致发光器件对应的栅线 输入电压 Vg, 与该栅线相连的 TFT12关闭， 该电致发光器件 11关闭（即停 止发光） 。
需要说明的是， 本发明实施例中与所述电致发光器件相连的栅线和数据 线与薄膜晶体管像素阵列中涉及的栅线与数据线不同 （即不共用） ， 本发明 实施例与所述电致发光器件相连的栅线和数据线仅用于控制电致发光器件产 生背光所设置的相互交叉的信号线， 为构成背光驱动电路的一部分。
图 5所示为图 4所示的阵列基板在 A-A， 线的截面图。 以下参看图 5进 一步描述图 4所示的阵列基板的结构。
TFT12位于电致发光器件 11的一侧； TFT12位于衬底基板 1与绝缘层 13之间； TFT12至少包括栅极 121、 栅极绝缘层 122、 源极 123和漏极 124, 以及半导体层 125; TFT12的漏极 124与电致发光器件 11的阴极 111相连。
其中， 图 5所示的 TFT12以顶栅型薄膜晶体管结构为例进行示意说明本 发明实施例， 电致发光器件 11的阴极 111位于衬底基板 1上， TFT12的漏 极 124与电致发光器件 11的阴极 111连接。 当然， TFT12也可以形成为底 栅型薄膜晶体管， 电致发光器件 11也可以形成为阳极位于基板上，则 TFT12 的漏极 124与电致发光器件 11的阳极连接， 这里不作具体限制。
在一个示例中， 每一电致发光器件中的电致发光层可以由一个无任何图 案的电致发光层组成（即由一体的电致发光层组成） ， 例如电致发光层的图 案为如图 2和图 4所示的矩形状， 电致发光层由一体的发光层组成； 每一电 致发光器件中的电致发光层也可以由多个相互独立的具有设定图案的电致发 光层单元组成， 电致发光层单元可以为规则或不规则的图形， 例如可以为如 图 6所示的矩形、 菱形、 圓、 三角形、 梯形等图形中的一种或多种。 图 6所
例如电致发光层由图 7 所示的多个相互独立的矩形状电致发光层单元 118组成， 或由图 8所示的多个相互独立的三角形状电致发光层单元 118组 成， 三角形状电致发光层单元 118两两相对设置。 相互独立的电致发光层单 元 118之间的间隙较小， 保证不影响阵列基板上像素区域亮度的均匀性。 图 6至图 8所示的电致发光层的图案仅是为了说明本发明实施例， 不用 于限制本发明实施例。
在一个示例中， 为了提高阴极的电子和阳极的空穴的注入效率， 以提高 电致发光器件的发光效率，参见图 9,电致发光器件 11还包括：位于阴极 111 与电致发光层 113之间的电子传输层 114, 以及位于阳极 112与电致发光层 113之间的空穴传输层 115。 空穴传输层 115可以提高空穴的传输速率， 电子 传输层 114可以提高电子的传输速率， 从而提高了电子和空穴在电致发光层 内的复合几率， 提高电致发光器件发光效率。 需要说明的是， 图 9所示的阴 极 111和阳极 112可以互换，当阴极 111和阳极 112互换后，电子传输层 114 与空穴传输层 115也需要互换。 也就是说电致发光器件的结构包括从上至下 依次分布的阳极、 空穴传输层、 电致发光层、 电子传输层和阴极， 或者包括 从上至下依次分布的阴极、 电子传输层、 电致发光层、 空穴传输层和阳极。 发光层、 电子传输层和阴极， 例如还可以包括位于阴极和电子传输层之间的 空穴阻挡层， 和 /或位于阳极和空穴传输层之间的电子阻挡层， 以实现提高电 子和空穴的传输速率， 这里不再赘述。 当然， 电致发光器件 11还可以包括任 何可以提高电致发光器件发光效率的膜层， 例如还可以包括电子注入层和空 穴注入层（图中未示出） ， 电子注入层位于阴极和电子传输层之间， 空穴注 入层位于阳极和空穴传输层之间。 这里不再赘述。
所述阳极可以为透明导电膜层， 例如可以为铟锡氧化物 ITO或铟辞氧化 物 IZO膜层， 所述阴极可以为铝或钼等金属或合金。
所述电致发光层为有机电致发光材料形成的发白光的电致发光层， 或量 子点电致发光材料形成的发白光的电致发光层。 当电致发光层为量子点电致 发光材料形成的发白光的电致发光层时， 量子点电致发光材料包括能够产生 红、 绿和蓝三色的量子点， 以实现发射白光的效果。
在一个示例中， 为了提高阵列基板中 TFT像素阵列 14与液晶层相接触 的一侧的平整性， 图 4所示的阵列基板中， 位于电致发光器件 11和 TFT像 素阵列 14之间的绝缘层 13为平坦层。
在一个示例中， 图 4所示的控制电致发光器件 11发光的开关 TFT12可 以为顶栅型 TFT也可以为底栅型 TFT。 图 4所示的阵列基板中， 开关 TFT12 为顶栅型 TFT。
以下具体介绍本发明实施例提供的阵列基板的制作方法， 主要包括两个 步骤：
步骤 1 : 在基板上制作开关 TFT和与该开关 TFT相连的电致发光器件。 步骤 2: 在形成有上述开关 TFT制作用于实现图像显示的像素阵列。 上述步骤 1例如可包括如下步骤：
步骤 101、 采用成膜工艺在衬底基板（例如玻璃基板）上沉积一层非晶 硅薄膜（a-Si ) , 参见图 10, 通过构图工艺在玻璃衬底基板 1靠近侧端的区 域形成非晶硅层 120。
步骤 102、采用成膜工艺在图 10所示的玻璃基板 1上沉积一层绝缘薄膜， 该绝缘薄膜可以为氮化硅保护薄膜 SiNx, 通过构图工艺形成图 11所示的位 于非晶硅层 120上的栅极绝缘层 122, 栅极绝缘层 122的面积例如小于非晶 硅层 120的面积， 保证非晶硅层 120的两侧露出。
步骤 103、采用成膜工艺在图 11所示的玻璃基板 1上沉积一层金属薄膜， 参见图 12, 通过构图工艺形成位于栅极绝缘层 122上的栅极 121。
步骤 104、 在非晶硅层 120两侧露出的区域进行离子注入， 参见图 13 , 形成源极 123和漏极 124和半导体层 125。
步骤 105、 通过溅射法在玻璃基板上形成源极引线和栅极引线以及栅线 和数据线（未在附图中体现） 。 需要说明的是， 此处栅线和数据线为背光驱 动电路的信号线， 独立于后面要形成的薄膜晶体管像素阵列中的栅线和数据 线。
步骤 106、 参见图 14, 在玻璃基板上溅射与漏极相接触的铝或钼薄膜， 通过构图工艺形成与每一电致发光器件对应的阴极 111。
步骤 107、 参见图 15, 在阴极 111上沉积电子传输层 114, 电子传输层
114与栅极 121、源极 123和半导体层 125等相绝缘， 电子传输层 114仅覆盖 阴极 111的部分区域。
步骤 108、 参见图 16, 在电子传输层 114上沉积电致发光层 113 , 该电 致发光层 113仅覆盖电子传输层 114所在区域。
步骤 109、 参见图 17, 在电致发光层 113上沉积空穴传输层 115 , 空穴 传输层 115仅覆盖电致发光层 113所在区域。
步骤 110、 参见图 18, 在空穴传输层 115上沉积阳极 112, 阳极 112覆 盖空穴传输层 115所在区域。
步骤 111、 参见图 19, 在整个玻璃基板 1上涂覆起绝缘作用的树脂层作 为透明绝缘层 13。
步骤 112、在图 19所示的玻璃衬底基板 1上形成像素阵列 14,形成的阵 列基板例如如图 9所示。
本发明实施例中， 背光由叠层沉积方式形成的电致发光器件提供， 从而 灵活制备具有背光功能的液晶显示面板。
本发明另一实施例提供一种液晶显示面板。 该液晶显示面板主要包括本 发明上述任一实施例提供的阵列基板、 与该阵列基板相对设置的对置基板， 以及位于对置基板和阵列基板之间的液晶层。
在一个示例中，所述对置基板可以为其上形成有彩色滤光片的彩膜基板。 在另一示例中， 彩色滤光片不形成在该对置基板上而是形成于上述阵列基板 上， 也就是说， 在此情况下， 上述阵列基板为同时形成有 TFT像素阵列和彩 色滤光片。
在一个示例中， 当给电致发光器件的阴极和阳极之间通电时， 阴极的电 子和阳极的空穴在电场的作用下分别注入电致发光层， 激发覆盖整个基板的 电致发光层发光。 电致发光器件发射的光线均勾出射， 通过液晶分子的偏转 产生不同灰度的光线投射到与阵列基板相对设置的彩膜基板， 经彩膜基板中 的彩膜层的滤光作用之后投射到液晶显示面板的出光侧， 形成彩色显示。
本发明另一实施例还提供一种显示装置， 包括上述液晶显示面板和驱动 该液晶显示面板实现图像显示的驱动电路。 显示装置可以为液晶显示器或液 晶电视等。
需要说明的是， 本发明实施例附图中的各膜层的厚度和相对大小不代表 实际的厚度和相对大小， 目的在于示意性地说明本发明。 另外， 本发明实施 例提到的 "之上" "之下" 的术语仅是说明两层膜层的上下位置关系， 该两 个膜层可以直接接触也可以在其之间具有插入构件。
综上所述， 本发明实施例通过将电致发光器件内嵌在液晶显示面板的阵 列基板中， 实现一种背光内嵌式（In cell式） 的液晶显示面板。 电致发光器 件替代了现有结构较复杂的背光模组， 实现了一种结构筒单、 轻薄的可提供 背光的液晶显示面板， 相应地， 包括所述液晶显示面板的显示装置结构筒单 且轻薄。
虽然上文中已经用一般性说明及具体实施方式， 对本发明作了详尽的描 述， 但在本发明基础上， 可以对之作一些修改或改进， 这对本领域技术人员 而言是显而易见的。 因此， 在不偏离本发明精神的基础上所做的这些修改或 改进， 均属于本发明要求保护的范围。

Claims

权利要求书
1、一种阵列基板， 包括衬底基板、位于所述衬底基板上方的薄膜晶体管 像素阵列， 以及位于所述薄膜晶体管像素阵列和所述衬底基板之间的一个或 多个电致发光器件， 所述电致发光器件对应所述薄膜晶体管像素阵列所在区 域;且所述电致发光器件与所述薄膜晶体管像素阵列通过透明绝缘层相绝缘。
2、根据权利要求 1所述的阵列基板， 其中， 所述电致发光器件的总体发 光区域与所述阵列基板的像素显示区域相互重叠。
3、根据权利要求 1所述的阵列基板， 其中， 所述电致发光器件为发射白 光的电致发光器件。
4、根据权利要求 1至 3中任一项所述的阵列基板， 其中， 所述多个电致 发光器件同层设置， 且任意两个相邻所述电致发光器件之间的间隔小于 100 米， 优选地， 小于 6(H敫米。
5、根据权利要求 4所述的阵列基板， 其中， 所述多个电致发光器件为沿 所述衬底基板的相对的两端延伸的相互平行的条状结构。
6、根据权利要求 1至 5中任一项所述的阵列基板， 其中， 所述电致发光 器件包括相对设置的阴极和阳极， 以及位于所述阳极和阴极之间的电致发光 层， 所述阴极、 电致发光层和阳极以叠层的方式设置在所述衬底基板上。
7、根据权利要求 1至 6中任一项所述的阵列基板，还包括： 位于所述透 明绝缘层与所述衬底基板之间的与所述各电致发光器件——对应相连的多个 开关晶体管；其中，所述电致发光器件的阳极与所述开关晶体管的漏极相连， 所述电致发光器件的阴极与第一供电电源相连； 或者所述电致发光器件的阳 极与所述第一供电电源相连， 所述电致发光器件的阴极与所述开关晶体管的 漏极相连。
8、根据权利要求 7所述的阵列基板， 其中， 所述各开关晶体管位于所述 各电致发光器件的同一侧；
所述阵列基板还包括： 与每一开关晶体管的栅极相连的栅线， 以及与各 开关晶体管的源极相连的数据线， 该数据线与第二供电电源相连。
9、根据权利要求 6至 8中任一项所述的阵列基板， 其中， 所述电致发光 层为有机电致发光材料形成的发白光的电致发光层， 或量子点电致发光材料 形成的发白光的电致发光层。
10、 根据权利要求 6至 9中任一项所述的阵列基板， 其中， 所述电致发 光层为一体的电致发光层或由多个相互独立的具有设定图案的电致发光层单 元组成的电致发光层。
11、根据权利要求 10所述的阵列基板， 其中， 所述电致发光层单元的设 定图案为矩形、 菱形、 圓形、 三角形、 梯形中的一种或几种。
12、根据权利要求 6至 11中任一项所述的阵列基板， 其中， 所述电致发 光器件还包括位于所述阴极与所述电致发光层之间的电子注入层和电子传输 层， 以及位于所述阳极与所述电致发光层之间的空穴注入层和空穴传输层。
13、一种液晶显示面板， 包括根据权利要求 1至 12中任一项所述的阵列 基板、 对置基板， 以及位于所述对置基板和阵列基板之间的液晶层。
14、根据权利要求 13所述的液晶显示面板，其中所述对置基板为彩膜基 板。
15、 一种显示装置， 包括权利要求 13或 14所述的液晶显示面板和驱动 该液晶显示面板实现图像显示的驱动电路。
PCT/CN2013/089462 2013-06-08 2013-12-14 阵列基板、液晶显示面板及显示装置 Ceased WO2014194637A1 (zh)

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CN103525406B (zh) 2013-10-21 2015-08-26 京东方科技集团股份有限公司 一种复合薄膜及其制作方法、光电元件和光电设备
CN103779509A (zh) * 2014-01-27 2014-05-07 京东方科技集团股份有限公司 发光器件及其制作方法和显示面板
CN104516150B (zh) * 2015-01-28 2017-07-21 京东方科技集团股份有限公司 一种显示面板、其制作方法及显示装置
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US10818856B2 (en) 2017-05-18 2020-10-27 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus
KR102837101B1 (ko) * 2020-07-09 2025-07-24 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
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