WO2014190616A1 - Oled基板和显示装置 - Google Patents

Oled基板和显示装置 Download PDF

Info

Publication number
WO2014190616A1
WO2014190616A1 PCT/CN2013/080859 CN2013080859W WO2014190616A1 WO 2014190616 A1 WO2014190616 A1 WO 2014190616A1 CN 2013080859 W CN2013080859 W CN 2013080859W WO 2014190616 A1 WO2014190616 A1 WO 2014190616A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
pixel
emitting
light
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/080859
Other languages
English (en)
French (fr)
Inventor
代青
孙力
刘则
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/347,390 priority Critical patent/US9640597B2/en
Publication of WO2014190616A1 publication Critical patent/WO2014190616A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating

Definitions

  • Embodiments of the present invention relate to an OLED substrate and a display device. Background technique
  • OLED Organic Light-Emitting Diode
  • LCD Organic Light-Emitting Diode
  • OLED displays have the advantages of self-illumination, fast response speed and wide viewing angle, and can be flexibly displayed, transparently displayed and displayed in 3D, thus achieving rapid development and popularization.
  • the OLED display includes an OLED substrate (a substrate on which an OLED structure is formed), a film, and a package cover.
  • the OLED substrate includes a substrate substrate, an illuminating sub-pixel disposed on the substrate substrate, and a pixel dividing wall disposed on the substrate substrate for separating the illuminating sub-pixels.
  • the light-emitting sub-pixel includes an anode, a hole injection layer, a hole transport layer, and an organic light-emitting layer which are sequentially laminated on the substrate, and the hole injection layer, the hole transport layer, and the organic light-emitting layer are organic layers.
  • the pixel dividing wall includes an lyophilic film and a liquid repellent film which are alternately laminated, and the lowermost layer of the pixel dividing wall is a lyophilic film, and the uppermost layer of the pixel dividing wall is a liquid repellency film.
  • the number of film layers included in the pixel dividing wall corresponding to the anode and the hole injecting layer included in each of the light-emitting sub-pixels is equal to 1, and the number of layers included in the pixel dividing wall corresponding to the hole transporting layer included in each of the light-emitting sub-pixels
  • a pixel separation wall equal to 2 and corresponding to the organic light-emitting layer included in each of the light-emitting sub-pixels has a number of layers equal to two.
  • the layer thickness of the same organic layer corresponding to each of the illuminating sub-pixels can only be equal. Summary of the invention
  • An embodiment of the present invention provides an OLED substrate and a display device, which can avoid each of the illuminating sub-pixels included in the OLED substrate, and the layer thickness of the same organic layer corresponding to each illuminating sub-pixel can only be equal, and can be used to improve the illuminating sub-pixel.
  • the surface smoothness of each organic layer included in the pixel can be used to improve the illuminating sub-pixel.
  • An aspect of the invention provides an OLED substrate, comprising: a substrate, a plurality of light-emitting sub-pixels disposed on the substrate, and a substrate disposed on the substrate for separating the light-emitting sub-pixels The pixel separates the wall.
  • the illuminating sub-pixels each include an anode sequentially stacked on the substrate, a hole injection layer, a hole transport layer, and an organic light-emitting layer;
  • the pixel separation wall includes an lyophilic film layer and a liquid-repellent film layer which are alternately stacked, and a lowermost layer of the pixel separation wall is a lyophilic film layer, the pixel
  • the uppermost layer of the partition wall is a liquid repellent film layer; at least two of the hole injection layer, the hole transport layer and the organic light-emitting layer corresponding to at least two of the light-emitting sub-pixels have a layer thickness that is unequal, and any of the light-emitting sub-pixels is empty
  • the upper surfaces of the hole injection layer, the hole transport layer, and the organic light-emitting layer are flush with the upper surface of one of the lyophilic film layers of the pixel dividing wall.
  • Another aspect of the present invention provides a display device including the OLED substrate.
  • the upper surfaces of the hole injection layer, the hole transport layer, and the organic light-emitting layer of any of the light-emitting sub-pixels are flush with the upper surface of one of the lyophilic film layers of the pixel dividing wall, Therefore, it can be ensured that when each organic layer included in the sub-pixel region is formed by the wet method, the droplets of the organic material falling into the sub-pixel region do not climb up along the wall of the pixel dividing wall, thereby improving the falling into the sub-pixel.
  • FIG. 1 is a schematic structural view of an OLED substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view showing a difference in thickness of a hole injection layer according to an embodiment of the present invention
  • FIG. 3 is a schematic structural view showing a difference in thickness of a hole transport layer according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a thickness of an organic light emitting layer according to an embodiment of the present invention.
  • FIG. 5 is a schematic flow chart of a method for fabricating an OLED substrate according to an embodiment of the present invention.
  • 6A-6E are schematic views showing a process of fabricating a pixel dividing wall by using the first method according to an embodiment of the present invention
  • FIGS. 7A-7E are schematic views showing a process of fabricating a pixel dividing wall by using the second method according to an embodiment of the present invention. detailed description
  • an OLED substrate includes a substrate substrate, light emitting sub-pixels disposed on the substrate substrate, and a pixel dividing wall disposed on the substrate substrate for separating the light emitting sub-pixels.
  • the light-emitting sub-pixels each include an anode, a hole injecting layer, a hole transporting layer, and an organic light-emitting layer which are sequentially laminated on the base substrate.
  • the pixel dividing wall includes an lyophilic film layer and a liquid repellency film layer which are alternately stacked, and a lowermost layer of the pixel dividing wall is a lyophilic film layer, and an uppermost layer of the pixel dividing wall is a liquid repellency film layer.
  • At least two illuminating sub-pixels are present, and at least one of the corresponding hole injection layer, hole transport layer and organic luminescent layer has a layer thickness unequal, and a hole injection layer of any illuminating sub-pixel
  • the upper surfaces of the hole transport layer and the organic light emitting layer are flush with the upper surface of one of the lyophilic film layers of the pixel dividing wall.
  • the OLED substrate of the embodiment of the present invention at least two illuminating sub-pixels are present in the plurality of illuminating sub-pixels, and at least one layer of the corresponding hole injecting layer, the hole transporting layer and the organic luminescent layer is not thick.
  • the display device in order to improve the display performance of the display device (eg, luminous efficiency, luminescence lifetime, etc.), it is generally required that the display device includes at least two illuminating sub-pixels in the OLED substrate, and the corresponding hole injection layer
  • the layer thickness of at least one of the hole transport layer and the organic light-emitting layer is not equal, and thus the display performance of the display device including the OLED substrate of the embodiment of the present invention is high.
  • the upper surfaces of the hole injection layer, the hole transport layer, and the organic light-emitting layer of any of the light-emitting sub-pixels are flush with the upper surface of one of the lyophilic film layers of the pixel dividing wall, it is ensured that the wet method is employed.
  • the droplets of the organic material falling into the sub-pixel region do not climb upward along the wall of the pixel dividing wall, thereby improving the droplets of the organic material falling into the sub-pixel region.
  • an OLED substrate of the embodiment of the invention is a substrate formed with an OLED structure.
  • an OLED substrate provided by an embodiment of the present invention includes a base substrate 101 , an illuminating sub-pixel 102 disposed on the base substrate 101 , and a photo sub-pixel 102 disposed on the base substrate 101 for separating the illuminating sub-pixels 102 .
  • Pixel partition wall 103 As shown in FIG. 1 , an OLED substrate provided by an embodiment of the present invention includes a base substrate 101 , an illuminating sub-pixel 102 disposed on the base substrate 101 , and a photo sub-pixel 102 disposed on the base substrate 101 for separating the illuminating sub-pixels 102 .
  • the light-emitting sub-pixel 102 includes an anode 1021 and a hole injection layer which are sequentially stacked on the base substrate 101.
  • the hole injection layer 1022, the hole transport layer 1023, and the organic light-emitting layer 1024 are organic layers.
  • the pixel dividing wall 103 includes an lyophilic film layer 1031 and a liquid repellency film layer 1032 which are alternately laminated, the lowermost layer of the pixel dividing wall is a lyophilic film layer 1031, and the uppermost layer of the pixel dividing wall is a liquid repellency film layer 1032.
  • the layer thickness of at least one of the organic light-emitting layer 1024 and the organic light-emitting layer 1024 is unequal, and the upper surface of the hole injection layer 1022, the hole transport layer 1023, and the organic light-emitting layer 1024 of any of the light-emitting sub-pixels 102 and the pixel partition wall 103 are The upper surface of one layer of the lyophilic film layer 1031 is flush.
  • the embodiment of the pixel separation wall 103 included in the OLED substrate of the embodiment of the present invention is the same.
  • the hole injection layer 1022, the hole transport layer 1023, and the organic light-emitting layer 1024 has a layer thickness that is not equal.
  • the embodiments are all applicable to the present invention, and three possible embodiments will be exemplified below.
  • the corresponding layer thickness of the hole injection layer 1022 is unequal; at least two illuminating sub-pixels 102 are present, the layer thickness of the corresponding hole injecting layer 1022 is not equal, and The layer thicknesses of the corresponding hole transport layers 1023 are not equal; and at least two light-emitting sub-pixels 102 are present, the layer thicknesses of the corresponding hole injection layers 1022 are not equal, and the layer thicknesses of the corresponding hole transport layers 1023 are not equal. And the layer thicknesses of their corresponding organic light-emitting layers 1024 are not equal.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the anode 1021 and the hole injecting layer 1022 is an odd number; the number of film layers included in the pixel dividing wall 103 corresponding to the hole transporting layer 1023 or the organic light emitting layer 1024 is even.
  • the three illuminating sub-pixels 102 included in the OLED substrate are a red illuminating sub-pixel, a green illuminating sub-pixel, and a blue illuminating sub-pixel, respectively.
  • the pixel partition wall 103 corresponding to the anode 1021 and the hole injection layer 1022 included in the red light-emitting sub-pixel has a number of film layers of 1, and a pixel partition wall corresponding to the anode 1021 and the hole injection layer 1022 included in the green light-emitting sub-pixel.
  • the number of layers included in 103 is 3, and the number of layers included in the pixel dividing wall 103 corresponding to the anode 1021 and the hole injecting layer 1022 included in the blue light-emitting sub-pixel is 3.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the hole transporting layer 1023 included in the red light-emitting sub-pixel is 4, and is included in the pixel dividing wall 103 corresponding to the hole transporting layer 1023 included in the green light-emitting sub-pixel.
  • the number of layers is 2, and the hole is included with the blue illuminating sub-pixel
  • the pixel separation wall 103 corresponding to the transmission layer 1023 includes 4 layers.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the organic light emitting layer 1024 included in the red light emitting sub-pixel is 4, and the film layer included in the pixel dividing wall 103 corresponding to the organic light emitting layer 1024 included in the green light emitting sub-pixel
  • the number of layers 4 and the pixel dividing wall 103 corresponding to the organic light-emitting layer 1024 included in the blue light-emitting sub-pixels are two.
  • the pixel dividing wall 103 includes a liquid-repellent film layer 1031 and a liquid-repellent film layer 1032 which are alternately laminated, the lowermost layer of the pixel dividing wall 103 is a lyophilic film layer 1031, and the uppermost layer of the pixel dividing wall 103 is a liquid-repellent film layer 1032.
  • the upper surface of the hole injection layer 1022 and one of the lyophilic film layers 1031 of the pixel separation wall 103 can be ensured.
  • the upper surface is flush, so that when the hole injection layer 1022 is formed by the wet method, the droplets of the organic material falling into the sub-pixel region do not climb up along the wall of the pixel dividing wall, thereby improving the falling.
  • the upper surface of the hole transport layer 1023 and the organic light-emitting layer 1024 and the pixel partition wall 103 can be secured.
  • the upper surface of one of the lyophilic film layers 1031 is flush, so that the surface smoothness of the hole transport layer 1023 and the organic light-emitting layer 1024 formed by the droplets of the organic material falling into the sub-pixel region after drying can be improved.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the anode 1021 and the hole injection layer 1022 is also different, and is different from the anode 1021 and the thickness.
  • the pixel separation wall 103 corresponding to the large hole injection layer 1022 includes a larger number of film layers than the pixel separation wall 103 corresponding to the anode 1021 and the hole injection layer 1022 having a small thickness. For example, as shown in FIG.
  • the three illuminating sub-pixels 102 included in the OLED substrate are respectively a red illuminating sub-pixel, a green illuminating sub-pixel, and a blue illuminating sub-pixel;
  • the red illuminating sub-pixel includes a hole injecting layer 1022 that is smaller than a green illuminating
  • the sub-pixel includes a hole injection layer 1022. Therefore, the number of film layers (1 layer) included in the pixel partition wall 103 corresponding to the anode 1021 and the hole injection layer 1022 included in the red light-emitting sub-pixel is smaller than the anode 1021 and the hole injection layer 1022 included in the green light-emitting sub-pixel.
  • the number of layers (3 layers) included in the pixel dividing wall 103 is a red illuminating sub-pixel, a green illuminating sub-pixel, and a blue illuminating sub-pixel;
  • the red illuminating sub-pixel includes a hole injecting layer 1022 that is smaller than
  • the pixel dividing wall 103 corresponding to the anode 1021 and the thickest hole injecting layer 1022 includes a number of film layers greater than 1, and the pixel dividing wall 103 corresponding to the anode 1021 and the thinnest hole injecting layer 1022
  • the number of layers included is not less than one.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the anode 1021 and the thickest hole injecting layer 1022 is an odd number greater than 1; preferably, corresponding to the anode 1021 and the thickest hole injecting layer 1022
  • the number of layers included in the pixel dividing wall 103 is any odd number greater than 1, such as 3, 5 or 7, which can be set as needed or empirically.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the anode 1021 and the thinnest hole injecting layer 1022 is an odd number of not less than 1, that is, a pixel corresponding to the anode 1021 and the thinnest hole injecting layer 1022.
  • the number of layers included in the partition wall 103 may be 1 or may be an odd number of more than 1 : 3 ⁇ 4 port 3.
  • the hole injection layer 1022 included in each of the light-emitting sub-pixels 102 is equal, the hole injection layer 1022 and the pixel separation wall 103 may be formed in the same manner as the existing hole injection layer and the pixel separation wall. It can also be formed differently from the existing hole injection layer and the pixel dividing wall.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the anode 1021 and the hole injecting layer 1022 is 1 (ie, the lowermost layer of the lyophilic film layer 1031 of the pixel dividing wall 103); or, with the anode 1021 and the empty
  • the pixel separation wall 103 corresponding to the hole injection layer 1022 includes an odd number of layers greater than one.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the hole transport layer 1023 is also different, and the hole transport layer 1023 having a large thickness is formed.
  • the number of film layers included in the corresponding pixel dividing wall 103 is larger than the number of film layers included in the pixel dividing wall 103 corresponding to the hole transport layer 1023 having a small thickness.
  • the three illuminating sub-pixels 102 included in the OLED substrate are a red illuminating sub-pixel, a green illuminating sub-pixel, and a blue illuminating sub-pixel, respectively.
  • the red light-emitting sub-pixel includes a hole transport layer 1023 having a thickness larger than the hole transport layer 1023 included in the green light-emitting sub-pixel, and thus the film layer included in the pixel separation wall 103 corresponding to the hole transport layer 1023 included in the red light-emitting sub-pixel.
  • the number (4 layers) is larger than the number of layers (2 layers) included in the pixel dividing wall 103 corresponding to the hole transport layer 1023 included in the green light-emitting sub-pixel.
  • the number of layers included in the pixel dividing wall 103 corresponding to the thickest hole transporting layer 1023 is not less than 2.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the thickest hole transporting layer 1023 is an even number greater than 2; preferably, the pixel dividing wall 103 corresponding to the thickest hole transporting layer 1023 is included
  • the number of layers is any even number greater than 2, such as 4, 6 or 8, which can be set as needed or empirically.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the thinnest hole transporting layer 1023 is an even number not less than 2, that is, the pixel dividing wall 103 corresponding to the thinnest hole transporting layer 1023
  • the number of layers may be 2 or an even number greater than 2, such as 4.
  • the embodiment of the hole transport layer 1023 included in each of the light-emitting sub-pixels 102 may be formed in the same manner as the existing hole transport layer and the pixel separation wall, or It is different from the existing hole transport layer and pixel partition wall.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the hole transporting layer 1023 is 2; or the number of film layers included in the pixel dividing wall 103 corresponding to the hole transporting layer 1023 is an even number greater than 2.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the organic light-emitting layer 1024 is also different, and the pixels corresponding to the organic light-emitting layer 1024 having a large thickness are included.
  • the number of layers included in the partition wall 103 is larger than the number of layers included in the pixel dividing wall 103 corresponding to the organic light-emitting layer 1024 having a small thickness. For example, as shown in FIG.
  • the three illuminating sub-pixels 102 included in the OLED substrate are a red illuminating sub-pixel, a green illuminating sub-pixel, and a blue illuminating sub-pixel, respectively.
  • the green light-emitting sub-pixel includes a thickness of the organic light-emitting layer 1024 that is larger than the organic light-emitting layer 1024 included in the blue light-emitting sub-pixel; thus, the number of film layers included in the pixel separation wall 103 corresponding to the organic light-emitting layer 1024 included in the green light-emitting sub-pixel ( The 4 layers are larger than the number of layers (2 layers) included in the pixel dividing wall 103 corresponding to the organic light-emitting layer 1024 included in the blue light-emitting sub-pixel.
  • the pixel dividing wall 103 corresponding to the thickest organic luminescent layer 1024 includes more than 2 layers, and the most The number of film layers included in the pixel dividing wall 103 corresponding to the thin organic light emitting layer 1024 is not less than 2.
  • the number of layers included in the pixel dividing wall 103 corresponding to the thickest organic light emitting layer 1024 The amount is an even number greater than 2; preferably, the number of layers of the pixel separation wall 103 corresponding to the thickest organic light-emitting layer 1024 is any even number greater than 2, such as 4, 6 or 8, as needed or Experience setting.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the thinnest organic light emitting layer 1024 is an even number not less than 2, that is, the film layer included in the pixel dividing wall 103 corresponding to the thinnest organic light emitting layer 1024.
  • the number can be 2 or an even number greater than 2, such as 4.
  • the organic light emitting layer 1024 included in each of the light emitting sub-pixels 102 may be equal, the organic light emitting layer 1024 and the pixel dividing wall 103 may be formed in the same manner as the existing organic light emitting layer and the pixel dividing wall, or may be The existing organic light-emitting layer and the pixel dividing wall are formed in different ways.
  • the number of film layers included in the pixel dividing wall 103 corresponding to the organic light emitting layer 1024 is 2; or the number of film layers included in the pixel dividing wall 103 corresponding to the organic light emitting layer 1024 is an even number greater than 2.
  • the illuminating sub-pixel 102 includes a red illuminating sub-pixel, a green illuminating sub-pixel, and a blue illuminating sub-pixel.
  • the base substrate 101 can be similar to the substrate substrate included in the existing OLED substrate.
  • the material of the base substrate 101 includes one or more of quartz, glass, metal foil, resin film, and resin sheet, for example, the resin includes PMMA (polydecyl acrylate), PET (poly(p-benzoquinone) Acid glycol ester), PBN (polyethylene glycol dicarboxylate) and polycarbonate resin.
  • the base substrate 101 can be used to prevent water and gas from penetrating the OLED substrate.
  • the OLED substrate of the bottom emission type display device includes the substrate 101 having good transparency (i.e., light transmittance in the visible light wavelength range).
  • the anode 1021 can be formed in a manner similar to that of the anode included in the existing OLED substrate.
  • the anode 1021 is a simple substance or alloy of Cr (chromium), Au (gold), Pt (platinum), Ni (nickel), Cu (copper), W (tungsten), A1 (aluminum), and Ag (silver) or A thin film composed of an oxide, for example, a transparent conductive film composed of ITO (indium tin oxide), InZnO (indium oxide) or ZnO (oxidized).
  • the hole injection layer 1022 may be formed in a manner similar to the manner in which the hole injection layer included in the existing OLED substrate is formed.
  • the hole injection layer 1022 is used to improve the injection capability of holes and the surface of the anode 1011. Modifications are made to act as a buffer.
  • the hole transport layer 1023 can be formed in a manner similar to that of the hole transport layer included in the existing OLED substrate.
  • the material of the hole transport layer 1023 may be a polymer material such as polyvinyl carbazole and its derivatives, polyfluorene and its derivatives, polyaniline and its derivatives, polysilane and its derivatives, main chain or Polyoxysilanes having an aromatic amine structure in the side chain and derivatives thereof, polythiamidine and derivatives thereof, polypyrrole and the like.
  • the hole transport layer 1023 comprises a polymer material having a Mw (weight average molecular weight) of from 50,000 to 300,000.
  • the hole transport layer 1023 comprises a polymer material having an Mw of from 100,000 to 200,000.
  • the hole transport layer 1023 ranges from 10 nm to 200 nm, and preferably, the hole transport layer 1023 ranges from 15 nm to 150 nm.
  • the organic light-emitting layer 1024 can be formed in a manner similar to that of the organic light-emitting layer included in the existing OLED substrate.
  • the organic light-emitting layer 1024 ranges from 10 nm to 200 nm, and preferably, the organic light-emitting layer 1024 ranges from 15 nm to 100 nm.
  • the material of the organic light-emitting layer 1024 may be a small molecule material and/or a high molecular polymer.
  • high molecular polymers include polyfluorene and its derivatives, polyparaphenylene women's derivatives, polyphenylene derivatives, polyvinyl carbazole derivatives and polythiamidine derivatives; small molecular materials Including citronellin, coumarin pigment, rhodamine pigment, fluorescein pigment, hydrazine, hydrazine and its derivatives and diene or polyene derivatives.
  • the thickness of the lyophilic film layer 1031 and the liquid repellency film layer 1032 may be the same or different.
  • the thickness of the lyophilic film layer 1031 or the liquid repellency film layer 1032 ranges from 5 nm to 100 nm, and preferably, the lyophilic film layer 1031 or the liquid repellency film layer 1032 has a thickness ranging from 5 nm to 20 nm.
  • the lyophilic film layer 1031 and/or the liquid repellency film layer 1032 may be an inorganic material and/or an organic material.
  • the material of the lyophilic film layer 1031 is an inorganic material having a controllable deposition rate and/or an organic material having a polar group.
  • inorganic materials with controlled deposition rates include SiOx (silicon oxide), SiNx (silicon nitride), SiNxOy (silicon oxynitride), TiOx (titanium oxide), and AlxOy (aluminum) Oxide).
  • the surface roughness of the inorganic material can be controlled by controlling the deposition rate of the inorganic material to achieve lyophilicity of the lyophilic film layer 1031.
  • an organic material having a polar group includes a polymer of a hydroxyl group, a mercapto group, an amino group, a carboxyl group, and an amide, for example, a polyhydroxystyrene derivative, a phenol resin derivative, and a poly(indenyl)acrylic derivative. And polyvinyl alcohol derivatives and polycinnamic acid derivatives.
  • the material of the liquid repellency film layer 1032 is an inorganic material having a controllable deposition rate and/or an organic material having a low surface energy.
  • inorganic materials with controlled deposition rates include SiOx (silicon oxide), SiNx (silicon nitride), SiNxOy (silicon oxynitride), TiOx (titanium oxide), and AlxOy (aluminum oxide). Wait.
  • the liquid repellent property of the liquid repellent film layer 1032 can be achieved by controlling the deposition rate of the inorganic material to control the surface roughness of the inorganic material.
  • organic materials having low surface energy include fluorinated polymeric materials such as fluorinated polyacrylates or polydecyl acrylates, fluorinated polyimide derivatives, fluorinated siloxane derived , a fluorinated norbornene dianhydride derivative, a fluorinated maleic anhydride derivative, a fluorinated epoxide derivative, and the like.
  • fluorinated polymeric materials such as fluorinated polyacrylates or polydecyl acrylates, fluorinated polyimide derivatives, fluorinated siloxane derived , a fluorinated norbornene dianhydride derivative, a fluorinated maleic anhydride derivative, a fluorinated epoxide derivative, and the like.
  • each of the light-emitting sub-pixels 102 further includes an electron transport layer 1025, an electron injection layer 1026, and a cathode 1027 which are sequentially stacked on the organic light-emitting layer 1024 and the pixel dividing wall 103.
  • the electron transport layer 1025, the electron injection layer 1026, and the cathode 1027 may be formed in a manner similar to the manner in which the electron transport layer, the electron injection layer, and the cathode included in the existing OLED substrate are formed.
  • the material of the electron transport layer 1025 includes quinoline and its derivatives or metal complexes, perylene and its derivatives or metal complexes, phenanthroline and its derivatives or metal complexes, and diphenyl.
  • the material of the electron injecting layer 1026 includes an oxide/composite oxide/fluoride/alloy of a metal such as an alkaline earth metal, an alkali metal, and a metal having a low work function, for example, Li 2 0 (lithium oxide), LiF ( Fluoride) and Cs 2 C0 3 (complex oxide of ruthenium).
  • the cathode 1027 is made of A1 (aluminum), Mg (magnesium), Ca (4 ⁇ ), Na (sodium), Au (gold), Ag (silver), Cu (copper), Cr (chromium), Pt (platinum).
  • a film made of a simple substance or alloy or oxide of a metal element such as Ni (nickel), for example, ITO (Indium Tin Oxide), InZnO (Indium Oxide), and ZnO (Oxide).
  • the cathode 1027 ranges from 5 nm to 1000 nm, and preferably, the cathode 1027 ranges from
  • the OLED substrate of the embodiment of the present invention further includes a protective layer 104 disposed on the cathode 1027 included in the light-emitting sub-pixel 102.
  • the protective layer 104 may be formed in a manner similar to that of the protective layer included in the OLED substrate of the prior art.
  • the protective layer 104 ranges from 2 ⁇ to 3 ⁇ .
  • the material of the protective layer 104 is an insulating material or a conductive material.
  • the insulating material includes inorganic amorphous insulating materials such as ⁇ -Si (amorphous silicon), a-SiC (amorphous silicon carbide), a-SiN (amorphous silicon nitride), aC (amorphous carbon), and Si0 2 (silica).
  • the plurality of light-emitting sub-pixels 102 included in the OLED substrate are red light-emitting sub-pixels, green light-emitting sub-pixels, and blue light-emitting sub-pixels.
  • the present invention is implemented.
  • An example of an OLED substrate is described.
  • the embodiment in which the organic layer is the hole injection layer 1022 is introduced.
  • the OLED substrate provided by the embodiment of the present invention includes a base substrate 201, and a red light-emitting sub-pixel 202R, a green light-emitting sub-pixel 202G, and a blue light-emitting sub-pixel 202B disposed on the base substrate 201 are disposed on the lining.
  • the red light-emitting sub-pixel 202R includes an anode 2021R, a hole injection layer 202AR, a hole transport layer 202BR, an organic light-emitting layer 202CR, an electron transport layer 202DR, an electron injection layer 202ER, and a cathode 202FR.
  • the green light-emitting sub-pixel 202G includes an anode 2021G, a hole injection layer 202AG, a hole transport layer 202BG, an organic light-emitting layer 202CG, an electron transport layer 202DG, an electron injection layer 202EG, and a cathode 202FG.
  • the blue light-emitting sub-pixel 202B includes an anode 2021B, a hole injection layer 202AB, a hole transport layer 202BB, an organic light-emitting layer 202CB, an electron transport layer 202DB, and an electron.
  • the layer 202EB and the cathode 202FB are implanted.
  • the pixel dividing wall 203 includes a lyophilic film layer 203A1, a liquid repellency film layer 203B1, a lyophilic film layer 203 A2, a liquid repellency film layer 203B2, a lyophilic film layer 203 A3, a liquid repellency film layer 203B3, a lyophilic film layer 203A4, and a repulsion layer.
  • Each of the light-emitting sub-pixels includes a hole injection layer that is not all the same.
  • the hole injection layer 202AR is the thinnest, and the hole injection layer 202AG and the hole injection layer 202AB are the same; the hole transport layer 202BR, the hole transport layer 202BG, and the hole transport layer 202BB are the same; the organic light-emitting layer 202CR, the organic light-emitting layer 202CG, and The organic light-emitting layer 202CB is the same.
  • the total thickness of the anode 2021R and the hole injection layer 202AR is equal to one film layer (ie, 203A1) included in the pixel separation wall 203 corresponding to the anode 2021R and the hole injection layer 202AR; the total thickness of the anode 2021G and the hole injection layer 202AG
  • layer 202AG is the same.
  • the number of layers included in the pixel separation wall 203 corresponding to the anode and hole injection layers included in the red and white light-emitting sub-pixels 202R and/or the blue light-emitting sub-pixels 202G and 202B may be Is an odd number greater than one.
  • the OLED substrate provided by the embodiment of the present invention includes a base substrate 301, and a red light-emitting sub-pixel 302R, a green light-emitting sub-pixel 302G, and a blue light-emitting sub-pixel 302B disposed on the base substrate 301 are disposed on the lining.
  • the red light-emitting sub-pixel 302R includes an anode 3021R, a hole injection layer 302AR, a hole transport layer 302BR, an organic light-emitting layer 302CR, an electron transport layer 302DR, an electron injection layer 302ER, and The cathode 302FR;
  • the green light-emitting sub-pixel 302G includes an anode 3021G, a hole injection layer 302AG, a hole transport layer 302BG, an organic light-emitting layer 302CG, an electron transport layer 302DG, an electron injection layer 302EG, and a cathode 302FG;
  • the blue light-emitting sub-pixel 302B includes an anode.
  • the pixel dividing wall 303 includes a lyophilic film layer 303A1, a liquid repellency film layer 303B1, a lyophilic film layer 303 A2, a liquid repellency film layer 303B2, a lyophilic film layer 303 A3, a liquid repellency film layer 303B3, a lyophilic film layer 303A4, and a repellency Liquid film layer 303B4.
  • the second embodiment differs from the first embodiment in that each of the illuminating sub-pixels in the second embodiment includes the same hole injecting layers, and each of the illuminating sub-pixels includes a hole transporting layer that is not identical.
  • the green light-emitting sub-pixel 302G includes a hole transport layer 302BG smaller than the hole transport layer 302BR included in the red light-emitting sub-pixel 302R; and the hole transport layer 302BR and the blue light-emitting sub-pixel 302B included in the red light-emitting sub-pixel 302R include hole transport.
  • Layer 302BB is the same.
  • the hole transport layer 302BG is equal to the two film layers (ie, 303B1 and 303A2) included in the pixel dividing wall 303 corresponding to the hole transport layer 302BG; the hole transport layer 302BR is equal to the pixel dividing wall corresponding to the hole transport layer 302BR.
  • the four film layers included in 303 i.e., 303B1, 303A2, 303B2, and 303A3; the embodiment of the hole transport layer 302BB is the same as the embodiment of the hole transport layer 302BR.
  • the embodiment of the present invention is only an example in which the number of film layers included in the pixel dividing wall 303 corresponding to the hole transporting layer 302BR included in the red light emitting sub-pixel 302R is greater than 2, and the light emitting sub-pixel 102 is used as an example.
  • the inclusion of the hole transport layer 1023 is not the same as the embodiment
  • the number of layers of the pixel separation wall 303 corresponding to the hole transport layer 301 corresponding to the red light-emitting sub-pixel 202R and/or the green light-emitting sub-pixel 202G and/or the blue light-emitting sub-pixel 202B may be greater than The even number of 2.
  • the OLED substrate provided by the embodiment of the present invention includes a base substrate 401, and a red light-emitting sub-pixel 402R, a green light-emitting sub-pixel 402G, and a blue light-emitting sub-pixel 402B disposed on the base substrate 401 are disposed on the lining.
  • the red light-emitting sub-pixel 402R includes an anode 4021R, a hole injection layer 402AR, a hole transport layer 402BR, an organic light-emitting layer 402CR, an electron transport layer 402DR, an electron injection layer 402ER, and a cathode 402FR.
  • the green light-emitting sub-pixel 402G includes an anode 4021G, a hole.
  • the blue light-emitting sub-pixel 402B includes an anode 4021B, a hole injection layer 402AB, a hole transport layer 402BB, The organic light-emitting layer 402CB, the electron transport layer 402DB, the electron injection layer 402EB, and the cathode 402FB.
  • the pixel dividing wall 403 includes a lyophilic film layer 403A1, a liquid repellency film layer 403B1, a lyophilic film layer 403 A2, a liquid repellency film layer 403B2, a lyophilic film layer 403 A3, a liquid repellency film layer 403B3, a lyophilic film layer 403A4, and a repulsion layer.
  • the third embodiment differs from the second embodiment in that each of the light-emitting sub-pixels in the third embodiment includes the same hole transport layer, and each of the light-emitting sub-pixels includes an organic light-emitting layer that is not identical.
  • the organic light-emitting layer 402CG included in the green light-emitting sub-pixel 402G is larger than the organic light-emitting layer 402CR included in the red light-emitting sub-pixel 402R, and the organic light-emitting layer 402CR included in the red light-emitting sub-pixel 402R is the same as the organic light-emitting layer 402CB included in the blue light-emitting sub-pixel 402B.
  • the organic light-emitting layer 402CG is equal to the four film layers (ie, 403B2, 403 A3, 403B3, and 403 A4) included in the pixel dividing wall 403 corresponding to the organic light-emitting layer 402CG; the organic light-emitting layer 402CR is equal to the pixel corresponding to the organic light-emitting layer 402CR
  • the two layers of the film contained in the partition wall 403 ie,
  • the embodiment of the organic light-emitting layer 402CB is the same as that of the organic light-emitting layer 402CR.
  • the embodiment of the present invention is only an example in which the number of film layers included in the pixel dividing wall 403 corresponding to the organic light emitting layer 402CG included in the green light emitting sub-pixel 402R is greater than 2, and the light emitting sub-pixel 102 is included.
  • the organic light-emitting layer 1024 is not the same embodiment
  • the number of layers of the pixel separation wall 403 corresponding to the organic light-emitting layer included in the red light-emitting sub-pixel 202R and/or the green light-emitting sub-pixel 202G and/or the blue light-emitting sub-pixel 202B may both be greater than two. even.
  • a display device includes the OLED substrate.
  • the embodiment of the present invention further provides a method for fabricating an OLED substrate. As shown in FIG. 5, the method for fabricating an OLED substrate according to an embodiment of the present invention includes the following steps:
  • Step 501 forming a plurality of anodes corresponding to the plurality of light-emitting sub-pixels on the base substrate; Step 502, forming a lyophilic film layer and a liquid-repellent film layer on the substrate and the portion of the anode substrate that are not covered by the anode Pixel partition walls of alternately stacked structures;
  • Step 503 sequentially forming a hole injection layer, a hole transport layer, and an organic light-emitting layer on a region of the anode that is not covered by the pixel separation wall.
  • At least two illuminating sub-pixels there are at least two illuminating sub-pixels, and at least one of the corresponding hole injecting layer, hole transporting layer and organic luminescent layer has an unequal layer thickness, and the hole injecting layer and the hole transporting layer of any illuminating sub-pixel And an upper surface of the organic light-emitting layer is flush with an upper surface of one of the lyophilic film layers of the pixel dividing wall.
  • step 501 forming a plurality of anodes on a base substrate includes: forming a transparent electrode conductive film on, for example, a substrate, and patterning the transparent electrode conductive film.
  • a plurality of anodes corresponding to a plurality of light-emitting sub-pixels formed on, for example, a substrate are required to be respectively connected to drain electrodes of driving transistors corresponding to the light-emitting sub-pixels.
  • a pixel separation wall is formed on a region of the base substrate that is not covered by the anode and a portion of the anode, including: not being covered by the anode on the substrate substrate by multiple coating or multiple vapor deposition
  • the formed lyophilic film and the liquid repellent film which are alternately laminated are subjected to one-time patterning treatment.
  • the film is applied successively or vapor-deposited. Each layer of the vapor deposited film is patterned.
  • Method 1 After multiple coating or multiple vapor deposition, forming a plurality of layers of lyophilic film and liquid repellent film alternately laminated on a region of the substrate that is not covered by the anode and a portion of the anode, The multi-layer alternately laminated lyophilic film and the liquid repellent film are subjected to a one-time patterning treatment.
  • the solvent of the adjacent upper film used may not be adjacent to the cured film.
  • the next layer of film is redissolved.
  • the material of the film forming the pixel dividing wall is an inorganic material
  • a lyophilic film which is alternately laminated in a plurality of layers and a portion of the anode on the substrate of the substrate is formed by vapor deposition.
  • a liquid repellent film is formed by vapor deposition.
  • any vapor deposition method is suitable for the present invention, such as CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), Atomic Layer Deposition, and Evaporation.
  • CVD Chemical Vapor Deposition
  • PVD Physical Vapor Deposition
  • Atomic Layer Deposition and Evaporation.
  • the pixel separation wall can be formed by control.
  • the deposition rate of the material of the film achieves control of the wettability of the formed film.
  • the deposited film when the deposition rate of the film is low, the deposited film is generally denser and has higher wettability; when the deposition rate of the film is higher, the surface of the film is sparse and rough, and the wettability is poor.
  • methods of patterning include wet etching and dry etching.
  • the lyophilic film and the liquid repellency film which are alternately laminated in a plurality of layers are patterned by wet etching; and the pixel is formed.
  • the material of the film of the partition wall is a non-photosensitive polymer or an inorganic material
  • the lyophilic film and the liquid-repellent film which are alternately laminated in a plurality of layers are patterned by dry etching.
  • the wet etching method in the embodiment of the present invention can be similar to the existing wet etching method, including three steps of exposure, development, and etching.
  • plasma etching and reactive ion etching for example, plasma etching and reactive ion etching.
  • the method of performing one-time patterning treatment on the formed lyophilic film and the liquid repellency film which are alternately laminated in a plurality of layers is low in cost.
  • the pixel separation wall in FIG. 2 is formed by a coating method as an example, and the method 1 is described in detail.
  • Step M1 forming a lyophilic film A1 on the substrate 601 on which the anode 602 is formed by a coating method, as shown in FIG. 6A;
  • the lyophilic film A1 After the lyophilic film A1 is formed on the substrate 601, it is possible to determine whether or not to perform drying, solvent removal, annealing, etc., depending on the properties of the lyophilic film A1.
  • Step M2 a liquid-repellent film B1 is formed on the lyophilic film A1 by a coating method, as shown in Fig. 6B.
  • a lyophilic film A2 is formed on the liquid-repellent film B1 by a coating method, as shown in Fig. 6C.
  • Step M4 a liquid-repellent film B2, a lyophilic film A3, a liquid-repellent film B3, a lyophilic film A4, and a liquid-repellent film are sequentially formed on the lyophilic film A2 by a coating method.
  • Film B4 as shown in Figure 6D.
  • Step M5 performing a one-time patterning process on the formed lyophilic film and the liquid repellency film which are alternately laminated, thereby forming a pixel separation wall on a region of the substrate not covered by the anode and a part of the anode (203A1) , 203B1, 203A2, 203B2, 203A3, 203B3, 203A4, and 203B4), as shown in FIG. 6E.
  • Method 2 successively coating or vapor-depositing multiple layers of the lyophilic film and the liquid-repellent film in the region not covered by the anode on the substrate and the partial anode, after coating or gas phase Each layer of deposited film is patterned.
  • the implementation method of the second method is similar to the implementation method of the first method, except that the order of the layers in the pixel separation wall is different.
  • the pixel separation wall in FIG. 2 is formed by the coating method as an example, and the second method is introduced in detail. .
  • Step N1 a lyophilic film A1 is formed on the substrate 701 on which the anode 702 is formed by a coating method, as shown in Fig. 7A.
  • Step N2 The coated film A1 is subjected to wet etching to obtain a lyophilic film layer 203A1 as shown in Fig. 7B.
  • Step N3 forming a liquid repellent film on the lyophilic film layer 203A1 and the anode by a coating method
  • Step N4 wet etching the coated film B1 to obtain a liquid repellent film layer 203B1, as shown in Fig. 7D.
  • Step N5 in accordance with the above method of forming the lyophilic film layer 203A1, a lyophilic film layer 203 A3, a liquid repellency film layer 203B3, a lyophilic film layer 203A4, and a liquid repellency film layer 203B4 are sequentially formed on the liquid repellency film layer 203B1. 7E is shown.
  • step 503 forming a hole injecting layer on a region of the anode that is not covered by the pixel dividing wall includes: forming a hole injecting layer on a region of the anode that is not covered by the pixel dividing wall by a coating method.
  • an organic material forming a hole injecting layer is provided on the anode by an inkjet method.
  • the area covered by the partition wall is dried, and the organic material disposed on the anode is not covered by the pixel dividing wall.
  • the atmosphere and temperature of the drying treatment are related to the material forming the hole injection layer.
  • the embodiment in which the hole transport layer is formed on the hole injection layer is similar to the embodiment in which the hole injection layer is formed on the region where the pixel is not covered by the pixel partition wall, and will not be described herein.
  • the atmosphere in which the organic material forming the hole transport layer provided on the hole injection layer is dried is N2 (nitrogen) or an atmosphere.
  • the temperature at which the organic material forming the hole transport layer provided on the hole injection layer is dried is 150 degrees C to 300 degrees C, preferably, the hole transport layer is formed on the hole injection layer.
  • the temperature at which the organic material is dried is 180 degrees Celsius to 250 degrees Celsius.
  • the embodiment in which the hole is injected into the hole injecting layer is similar, and will not be described herein.
  • an organic light is formed on the hole transport layer.
  • the organic material forming the organic light-emitting layer is a polymer material
  • an organic light-emitting layer is formed on the hole transport layer.
  • the method is similar to the embodiment in which a hole injection layer is formed on a region of the anode that is not covered by the pixel separation wall; when the organic material forming the organic light-emitting layer is a small molecule material, a vapor deposition method may be used to form a hole transport layer.
  • Organic light-emitting layer is a vapor deposition method.
  • the method further includes: sequentially forming an electron transport layer, an electron injection layer, a cathode, and a protective layer over the plurality of light-emitting sub-pixels by vapor deposition.
  • an electron transport layer, an electron injection layer, a cathode, and a protective layer are sequentially formed over a plurality of light-emitting sub-pixels, and an electron transport layer, an electron injection layer, a cathode, and a protective layer are sequentially formed over a plurality of light-emitting sub-pixels.
  • the way is similar.
  • the energy generated by the particles has a negligible effect on the OLED substrate.
  • the dense layer of the protective layer is sufficiently good to effectively block the penetration of moisture and oxygen.
  • the protective layer prevents the WVTR (permeation rate) of the water vapor to be less than 10 - 5 g / m 2 /day (gram per Square meters every 24 hours).

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED基板包括多个发光亚像素和像素分隔墙，至少两个发光亚像素对应的空穴注入层、空穴传输层和有机发光层中至少存在一层的层厚不相等，且任意发光亚像素的空穴注入层、空穴传输层和有机发光层的上表面与所述像素分隔墙的其中一层亲液膜层的上表面平齐。该OLED基板可用以提高发光亚像素包括的每层有机层的表面平滑度。还提供了一种显示装置。

Description

OLED基板和显示装置 技术领域
本发明的实施例涉及一种 OLED基板和显示装置。 背景技术
OLED ( Organic Light-Emitting Diode )显示器是一种新型的显示器件。 与液晶显示器相比， OLED显示器具有自发光、响应速度快和宽视角等优点， 而且可以进行柔性显示、 透明显示和 3D显示， 因而得到了快速发展与普及。
OLED显示器包括 OLED基板 (其上形成有 OLED结构的基板 )、 胶膜 和封装盖板。 OLED基板包括衬底基板， 设于衬底基板上的发光亚像素和设 于衬底基板上、 用于分隔所述发光亚像素的像素分隔墙。 发光亚像素包括依 次层叠于所述基板上的阳极、 空穴注入层、 空穴传输层和有机发光层， 所述 空穴注入层、 空穴传输层和有机发光层为有机层。 像素分隔墙包括交替层叠 的亲液性膜与斥液性膜， 像素分隔墙的最下层是亲液性膜， 像素分隔墙的最 上层是斥液性膜。
目前与各发光亚像素包括的阳极和空穴注入层对应的像素分隔墙所包含 的膜层数量等于 1 , 与各发光亚像素包括的空穴传输层对应的像素分隔墙所 包含的膜层数量等于 2, 以及与各发光亚像素包括的有机发光层对应的像素 分隔墙所包含的膜层数量等于 2。 综上所述， 目前针对 OLED基板包括的各 发光亚像素， 所述各发光亚像素对应的同一有机层的层厚只能相等。 发明内容
本发明实施例提供了一种 OLED基板和显示装置，可避免 OLED基板包 括的各发光亚像素， 所述各发光亚像素对应的同一有机层的层厚只能相等的 问题， 可用以提高发光亚像素包括的每层有机层的表面平滑度。
本发明的一个方面提供了一种 OLED基板， 其包括： 衬底基板、 设于所 述衬底基板上的多个发光亚像素和设于所述衬底基板上用于分隔所述发光亚 像素的像素分隔墙。所述发光亚像素每个包括依次层叠于所述基板上的阳极、 空穴注入层、 空穴传输层和有机发光层； 所述像素分隔墙包括交替层叠的亲 液膜层与斥液膜层， 所述像素分隔墙的最下层是亲液膜层， 所述像素分隔墙 的最上层是斥液膜层； 至少两个发光亚像素对应的空穴注入层、 空穴传输层 和有机发光层中至少存在一层的层厚不相等， 且任意发光亚像素的空穴注入 层、 空穴传输层和有机发光层的上表面与所述像素分隔墙的其中一层亲液膜 层的上表面平齐。
本发明的另一个方面提供了一种显示装置， 包括所述 OLED基板。
在本发明的实施例中， 由于任意发光亚像素的空穴注入层、 空穴传输层 和有机发光层的上表面与所述像素分隔墙的其中一层亲液膜层的上表面平 齐， 因而可以保证在采用湿式制法制作发光亚像素包括的每层有机层时， 落 入亚像素区域内的有机材料液滴不会沿着像素分隔墙的墙壁向上爬升， 从而 可以提高落入亚像素区域内的有机材料液滴在干燥后形成的每层有机层的表 面平滑度。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为本发明实施例 OLED基板的结构示意图；
图 2为本发明实施例空穴注入层厚度不同的结构示意图；
图 3为本发明实施例空穴传输层厚度不同的结构示意图；
图 4为本发明实施例有机发光层厚度不同的结构示意图；
图 5为本发明实施例 OLED基板制作方法的流程示意图；
图 6A〜图 6E为本发明实施例采用第一种方法制作像素分隔墙的过程示 意图；
图 7A〜图 7E为本发明实施例采用第二种方法制作像素分隔墙的过程示 意图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
在本发明的一个实施例中， OLED基板包括衬底基板， 设于所述衬底基 板上的发光亚像素和设于所述衬底基板上用于分隔所述发光亚像素的像素分 隔墙。 所述发光亚像素每个包括依次层叠于所述衬底基板上的阳极、 空穴注 入层、 空穴传输层和有机发光层。 所述像素分隔墙包括交替层叠的亲液膜层 与斥液膜层， 所述像素分隔墙的最下层是亲液膜层， 所述像素分隔墙的最上 层是斥液膜层。 该 OLED基板中， 至少存在两个发光亚像素， 其对应的空穴 注入层、 空穴传输层和有机发光层中至少存在一层的层厚不相等， 且任意发 光亚像素的空穴注入层、 空穴传输层和有机发光层的上表面与所述像素分隔 墙的其中一层亲液膜层的上表面平齐。
针对本发明实施例的 OLED基板包括的多个发光亚像素中， 至少存在两 个发光亚像素， 其对应的空穴注入层、 空穴传输层和有机发光层中至少存在 一层的层厚不相等， 而在实际应用中， 为了提高显示装置的显示性能（比如， 发光效率和发光寿命等）， 一般要求显示装置包括的 OLED基板中至少存在 两个发光亚像素， 其对应的空穴注入层、 空穴传输层和有机发光层中至少存 在一层的层厚不相等， 因而包括本发明实施例的 OLED基板的显示装置的显 示性能较高。
由于任意发光亚像素的空穴注入层、 空穴传输层和有机发光层的上表面 与所述像素分隔墙的其中一层亲液膜层的上表面平齐， 因而可以保证在采用 湿式制法制作发光亚像素包括的每层有机层时， 落入亚像素区域内的有机材 料液滴不会沿着像素分隔墙的墙壁向上爬升， 从而可以提高落入亚像素区域 内的有机材料液滴在干燥后形成的每层有机层的表面平滑度。
需要说明的是,本发明实施例的 OLED基板为形成有 OLED结构的基板。 如图 1所示， 本发明一个实施例提供的 OLED基板包括衬底基板 101 , 设于衬底基板 101上的发光亚像素 102和设于衬底基板 101上、 用于分隔发 光亚像素 102的像素分隔墙 103。
发光亚像素 102包括依次层叠于衬底基板 101上的阳极 1021、空穴注入 层 1022、 空穴传输层 1023和有机发光层 1024。 空穴注入层 1022、 空穴传输 层 1023和有机发光层 1024为有机层。
像素分隔墙 103包括交替层叠的亲液膜层 1031与斥液膜层 1032, 像素 分隔墙的最下层是亲液膜层 1031 , 像素分隔墙的最上层是斥液膜层 1032。
至少存在两个发光亚像素 102, 其对应的空穴注入层 1022、 空穴传输层
1023和有机发光层 1024中至少存在一层的层厚不相等， 且任意发光亚像素 102的空穴注入层 1022、 空穴传输层 1023和有机发光层 1024的上表面与像 素分隔墙 103的其中一层亲液膜层 1031的上表面平齐。
例如， 本发明实施例的 OLED基板包括的各个像素分隔墙 103的实施方 式相同。
例如， 至少存在两个发光亚像素 102, 其对应的空穴注入层 1022、 空穴 传输层 1023和有机发光层 1024中至少存在一层的层厚不相等的实施方式有 多种，任意一种实施方式均适用于本发明，下面将例举三种可能的实施方式。
比如， 至少存在两个发光亚像素 102, 其对应的空穴注入层 1022的层厚 不相等； 至少存在两个发光亚像素 102, 其对应的空穴注入层 1022的层厚不 相等， 以及其对应的空穴传输层 1023的层厚不相等；和至少存在两个发光亚 像素 102,其对应的空穴注入层 1022的层厚不相等，其对应的空穴传输层 1023 的层厚不相等， 以及其对应的有机发光层 1024的层厚不相等。
例如， 与阳极 1021和空穴注入层 1022对应的像素分隔墙 103所包含的 膜层数量为奇数； 与空穴传输层 1023或有机发光层 1024对应的像素分隔墙 103所包含的膜层数量为偶数。
比如， 如图 1所示， OLED基板包括的三个发光亚像素 102分别为红色 发光亚像素、 绿色发光亚像素和蓝色发光亚像素。 与红色发光亚像素包括的 阳极 1021和空穴注入层 1022对应的像素分隔墙 103所包含的膜层数量为 1 , 与绿色发光亚像素包括的阳极 1021 和空穴注入层 1022对应的像素分隔墙 103所包含的膜层数量为 3 , 以及与蓝色发光亚像素包括的阳极 1021和空穴 注入层 1022对应的像素分隔墙 103所包含的膜层数量为 3。
而且，与红色发光亚像素包括的空穴传输层 1023对应的像素分隔墙 103 所包含的膜层数量为 4,与绿色发光亚像素包括的空穴传输层 1023对应的像 素分隔墙 103所包含的膜层数量为 2, 以及与蓝色发光亚像素包括的空穴传 输层 1023对应的像素分隔墙 103所包含的膜层数量为 4。
而且，与红色发光亚像素包括的有机发光层 1024对应的像素分隔墙 103 所包含的膜层数量为 4,与绿色发光亚像素包括的有机发光层 1024对应的像 素分隔墙 103所包含的膜层数量为 4, 以及与蓝色发光亚像素包括的有机发 光层 1024对应的像素分隔墙 103所包含的膜层数量为 2。
另外，像素分隔墙 103包括交替层叠的亲液膜层 1031与斥液膜层 1032, 像素分隔墙 103的最下层是亲液膜层 1031 ,像素分隔墙 103的最上层是斥液 膜层 1032。
在与阳极 1021和空穴注入层 1022对应的像素分隔墙 103所包含的膜层 数量为奇数时，可以保证空穴注入层 1022的上表面与像素分隔墙 103的其中 一层亲液膜层 1031的上表面平齐，从而可以保证在采用湿式制法制作空穴注 入层 1022时，落入亚像素区域内的有机材料液滴不会沿着像素分隔墙的墙壁 向上爬升， 进而可以提高落入亚像素区域内的有机材料液滴在干燥后形成的 空穴注入层 1022的表面平滑度。
而且， 在与空穴传输层 1023或有机发光层 1024对应的像素分隔墙 103 所包含的膜层数量为偶数时， 可以保证空穴传输层 1023和有机发光层 1024 的上表面与像素分隔墙 103的其中一层亲液膜层 1031的上表面平齐,从而可 以提高落入亚像素区域内的有机材料液滴在干燥后形成的空穴传输层 1023 和有机发光层 1024的表面平滑度。
例如，在发光亚像素 102包括的空穴注入层 1022不相等时，与阳极 1021 和空穴注入层 1022对应的像素分隔墙 103中所包含的膜层数量也不相同，并 且与阳极 1021和厚度大的空穴注入层 1022对应的像素分隔墙 103所包含的 膜层数量大于与阳极 1021 和厚度小的空穴注入层 1022对应的像素分隔墙 103所包含的膜层数量。 比如， 如图 1所示， OLED基板包括的三个发光亚 像素 102分别为红色发光亚像素、 绿色发光亚像素和蓝色发光亚像素； 红色 发光亚像素包括的空穴注入层 1022 小于绿色发光亚像素包括的空穴注入层 1022。 因而， 与红色发光亚像素包括的阳极 1021和空穴注入层 1022对应的 像素分隔墙 103所包含的膜层数量（1层） 小于与绿色发光亚像素包括的阳 极 1021和空穴注入层 1022对应的像素分隔墙 103所包含的膜层数量（ 3层）。
例如， 至少存在两个发光亚像素 102, 其对应的空穴注入层 1022的层厚 不相等； 与阳极 1021和最厚的空穴注入层 1022对应的像素分隔墙 103所包 含的膜层数量大于 1 , 且与阳极 1021和最薄的空穴注入层 1022对应的像素 分隔墙 103所包含的膜层数量不小于 1。
例如， 与阳极 1021和最厚的空穴注入层 1022对应的像素分隔墙 103所 包含的膜层数量为大于 1的奇数；较佳地，与阳极 1021和最厚的空穴注入层 1022对应的像素分隔墙 103所包含的膜层数量为大于 1的任何奇数，比如 3 , 5或 7, 具体可以根据需要或经验设定。
例如， 与阳极 1021和最薄的空穴注入层 1022对应的像素分隔墙 103所 包含的膜层数量为不小于 1 的奇数， 即， 与阳极 1021和最薄的空穴注入层 1022对应的像素分隔墙 103所包含的膜层数量可以为 1 , 也可以为大于 1的 奇 t匕: ¾口3。
例如，在每个发光亚像素 102包括的空穴注入层 1022相等时， 空穴注入 层 1022和像素分隔墙 103的形成方式可以与现有的空穴注入层和像素分隔墙 的形成方式相同，也可以与现有的空穴注入层和像素分隔墙的形成方式不同。
比如， 与阳极 1021和空穴注入层 1022对应的像素分隔墙 103所包含的 膜层数量为 1 (即， 像素分隔墙 103的最下层的亲液膜层 1031 ) ； 或者， 与 阳极 1021和空穴注入层 1022对应的像素分隔墙 103所包含的膜层数量为大 于 1的奇数。
例如，在发光亚像素 102包括的空穴传输层 1023不相等时，与空穴传输 层 1023对应的像素分隔墙 103所包含的膜层数量也不相同，并且与厚度大的 空穴传输层 1023对应的像素分隔墙 103所包含的膜层数量大于与厚度小的空 穴传输层 1023对应的像素分隔墙 103所包含的膜层数量。
比如， 如图 1所示， OLED基板包括的三个发光亚像素 102分别为红色 发光亚像素、 绿色发光亚像素和蓝色发光亚像素。 红色发光亚像素包括的空 穴传输层 1023的厚度大于绿色发光亚像素包括的空穴传输层 1023 , 因而与 红色发光亚像素包括的空穴传输层 1023对应的像素分隔墙 103所包含的膜层 数量（ 4层）大于与绿色发光亚像素包括的空穴传输层 1023对应的像素分隔 墙 103所包含的膜层数量（ 2层） 。
例如， 至少存在两个发光亚像素 102, 其对应的空穴传输层 1023的层厚 不相等；与最厚的空穴传输层 1023对应的像素分隔墙 103所包含的膜层数量 大于 2,且与最薄的空穴传输层 1023对应的像素分隔墙 103所包含的膜层数 量不小于 2。
例如，与最厚的空穴传输层 1023对应的像素分隔墙 103所包含的膜层数 量为大于 2的偶数； 较佳地， 与最厚的空穴传输层 1023对应的像素分隔墙 103所包含的膜层数量为大于 2的任何偶数， 比如 4, 6或 8, 具体可以根据 需要或经验设定。
例如，与最薄的空穴传输层 1023对应的像素分隔墙 103所包含的膜层数 量为不小于 2的偶数， 即， 与最薄的空穴传输层 1023对应的像素分隔墙 103 所包含的膜层数量可以为 2, 也可以为大于 2的偶数， 比如 4。
在每个发光亚像素 102包括的空穴传输层 1023相等时，空穴传输层 1023 和像素分隔墙 103的实施方式可以与现有的空穴传输层和像素分隔墙的形成 方式相同， 也可以与现有的空穴传输层和像素分隔墙的形成方式不同。
比如，与空穴传输层 1023对应的像素分隔墙 103所包含的膜层数量为 2; 或者，与空穴传输层 1023对应的像素分隔墙 103所包含的膜层数量为大于 2 的偶数。
例如，在发光亚像素 102包括的有机发光层 1024不相等时，与有机发光 层 1024对应的像素分隔墙 103所包含的膜层数量也不相同，并且与厚度大的 有机发光层 1024对应的像素分隔墙 103所包含的膜层数量大于与厚度小的有 机发光层 1024对应的像素分隔墙 103所包含的膜层数量。比如，如图 1所示， OLED基板包括的三个发光亚像素 102分别为红色发光亚像素、 绿色发光亚 像素和蓝色发光亚像素。绿色发光亚像素包括的有机发光层 1024的厚度大于 蓝色发光亚像素包括的有机发光层 1024; 因而与绿色发光亚像素包括的有机 发光层 1024对应的像素分隔墙 103所包含的膜层数量（ 4层）大于与蓝色发 光亚像素包括的有机发光层 1024对应的像素分隔墙 103所包含的膜层数量 ( 2 层） 。
例如， 至少存在两个发光亚像素 102, 其对应的有机发光层 1024的层厚 不相等；与最厚的有机发光层 1024对应的像素分隔墙 103所包含的膜层数量 大于 2,且与最薄的有机发光层 1024对应的像素分隔墙 103所包含的膜层数 量不小于 2。
例如，与最厚的有机发光层 1024对应的像素分隔墙 103所包含的膜层数 量为大于 2的偶数； 较佳地， 与最厚的有机发光层 1024对应的像素分隔墙 103所包含的膜层数量为大于 2的任何偶数， 比如 4, 6或 8, 具体可以根据 需要或经验设定。
例如，与最薄的有机发光层 1024对应的像素分隔墙 103所包含的膜层数 量为不小于 2的偶数， 即， 与最薄的有机发光层 1024对应的像素分隔墙 103 所包含的膜层数量可以为 2, 也可以为大于 2的偶数， 比如 4。
例如，在每个发光亚像素 102包括的有机发光层 1024相等时，有机发光 层 1024和像素分隔墙 103的形成方式可以与现有的有机发光层和像素分隔墙 的形成方式相同，也可以与现有的有机发光层和像素分隔墙的形成方式不同。
比如，与有机发光层 1024对应的像素分隔墙 103所包含的膜层数量为 2; 或者，与有机发光层 1024对应的像素分隔墙 103所包含的膜层数量为大于 2 的偶数。
例如， 发光亚像素 102包括红色发光亚像素、 绿色发光亚像素和蓝色发 光亚像素。
例如， 衬底基板 101可以与现有的 OLED基板包括的衬底基板类似。 例如， 衬底基板 101的材料包括石英、 玻璃、 金属箔、 树脂膜和树脂片 中的一种或多种， 例如， 树脂包括 PMMA (聚曱基丙烯酸曱酯） 、 PET (聚 对苯二曱酸乙二醇酯） 、 PBN (聚蔡二曱酸乙二醇酯）和聚碳酸酯树脂等。
较佳地， 衬底基板 101可以用于防止水和气体渗透 OLED基板。
较佳地，底端发射型的显示装置的 OLED基板包括的衬底基板 101具备 良好的透明性（即， 在可见光波长范围内具有光线穿透性） 。
例如， 阳极 1021的形成方式可以与现有的 OLED基板包括的阳极的形 成方式类似。
例如， 阳极 1021为由 Cr (铬） 、 Au (金） 、 Pt (铂） 、 Ni (镍） 、 Cu (铜）、 W (钨）、 A1 (铝）和 Ag (银）的单质或合金或氧化物构成的薄膜， 比如， 由 ITO (铟锡氧化物） 、 InZnO (铟辞氧化物）或 ZnO (氧化辞）构 成的透明导电薄膜。
例如， 空穴注入层 1022的形成方式可以与现有的 OLED基板包括的空 穴注入层的形成方式类似。
较佳地， 空穴注入层 1022用于提高空穴的注入能力和对阳极 1021表面 进行修饰以起到緩沖的作用。
例如， 空穴传输层 1023的形成方式可以与现有的 OLED基板包括的空 穴传输层的形成方式类似。
例如， 空穴传输层 1023的材料可以为聚合物材料， 比如， 聚乙烯咔唑及 其衍生物、 聚芴及其衍生物、 聚苯胺及其衍生物、 聚硅烷及其衍生物、 主链 或侧链中具有芳胺结构的聚氧硅烷及其衍生物、 聚噻喻及其衍生物和聚吡咯 等。
例如， 空穴传输层 1023包括的聚合物材料的 Mw (重量平均分子量 )为 50000 ~ 300000, 较佳地， 空穴传输层 1023 包括的聚合物材料的 Mw 为 100000 ~ 200000。
例如， 空穴传输层 1023范围为 10nm~200nm,较佳地， 空穴传输层 1023 范围为 15nm~150nm。
例如， 有机发光层 1024的形成方式可以与现有的 OLED基板包括的有 机发光层的形成方式类似。
例如，有机发光层 1024范围为 10nm~200nm,较佳地，有机发光层 1024 范围为 15nm~100nm。
例如， 有机发光层 1024的材料可以为小分子材料和 /或高分子聚合物。 例如， 高分子聚合物包括聚芴及其衍生物、聚对亚苯基亚乙婦基衍生物、 聚亚苯基衍生物、 聚乙烯咔唑衍生物和聚噻喻衍生物等； 小分子材料包括二 蔡嵌苯色素、 香豆素色素、 罗丹明色素、 荧光素色素、 芘、 蒽及其衍生物和 二烯或多烯类衍生物等。
例如， 亲液膜层 1031和斥液膜层 1032的厚度可以相同， 也可以不同。 例如， 亲液膜层 1031或斥液膜层 1032的厚度范围为 5nm ~ lOOnm, 较 佳地， 亲液膜层 1031或斥液膜层 1032的厚度范围为 5nm ~ 20nm。
例如， 亲液膜层 1031和 /或斥液膜层 1032可以为无机材料和 /或有机材 料。
例如， 亲液膜层 1031的材料为沉积速率可控的无机材料和 /或带有极性 基团的有机材料。
例如， 沉积速率可控的无机材料包括 SiOx (硅的氧化物）、 SiNx (硅的 氮化物） 、 SiNxOy (硅的氮氧化物） 、 TiOx (钛的氧化物）和 AlxOy (铝的 氧化物）等。
具体实施中， 可以通过控制无机材料的沉积速率来控制无机材料的表面 粗糙度， 实现亲液膜层 1031的亲液性。
例如， 带有极性基团的有机材料包括羟基、 巯基、 氨基、 羧基和酰胺等 的聚合物， 比如， 聚羟基苯乙烯类衍生物、 酚 树脂类衍生物、 聚（曱基） 丙烯酸类衍生物、 聚乙烯醇类衍生物和聚肉桂酸类衍生物等。
例如， 斥液膜层 1032的材料为沉积速率可控的无机材料和 /或具有低表 面能的有机材料。
例如， 沉积速率可控的无机材料包括 SiOx (硅的氧化物）、 SiNx (硅的 氮化物 ) 、 SiNxOy (硅的氮氧化物 ) 、 TiOx (钛的氧化物 )和 AlxOy (铝的 氧化物）等。
具体实施中， 可以通过控制无机材料的沉积速率来控制无机材料的表面 粗糙度， 实现斥液膜层 1032的斥液性。
例如， 具有低表面能的有机材料包括氟化的聚合物材料， 比如， 氟代的 聚丙烯酸酯或聚曱基丙烯酸酯类、 氟化的聚酰亚胺衍生物、 氟化的硅氧烷衍 生物、 氟化降冰片烯二酸酐衍生物、 氟化马来酸酐衍生物和氟化环氧化物衍 生物等。
例如，每个发光亚像素 102还包括依次层叠于有机发光层 1024和像素分 隔墙 103上的电子传输层 1025、 电子注入层 1026和阴极 1027。
例如， 电子传输层 1025、 电子注入层 1026和阴极 1027的形成方式可以 与现有的 OLED基板包括的电子传输层、电子注入层和阴极的形成方式类似。
例如， 电子传输层 1025的材料包括喹啉及其衍生物或金属络合物、二萘 嵌苯及其衍生物或金属络合物、 菲咯啉及其衍生物或金属络合物、 双苯乙烯 及其衍生物或金属络合物、 嘧啶及其衍生物或金属络合物、 三唑及其衍生物 或金属络合物、 恶唑及其衍生物或金属络合物、 富勒烯及其衍生物或金属络 合物、 恶二唑及其衍生物或金属络合物， 以及芴酮及其衍生物或金属络合物 等。
例如， 电子注入层 1026的材料包括碱土金属、碱金属和具有低功函数的 金属等金属的氧化物 /复合氧化物 /氟化物 /合金， 比如， Li20 (锂的氧化物）、 LiF (氟化物）和 Cs2C03 (铯的复合氧化物） 。 例如， 阴极 1027为由 A1 (铝） 、 Mg (镁） 、 Ca ( 4丐） 、 Na (钠） 、 Au (金） 、 Ag (银） 、 Cu (铜） 、 Cr (铬） 、 Pt (铂）和 Ni (镍）等金属 元素的单质或合金或氧化物制成的薄膜， 比如， ITO (铟锡氧化物）、 InZnO (铟辞氧化物 )和 ZnO (氧化辞 ) 。
例如， 阴极 1027 范围为 5nm~1000nm, 较佳地， 阴极 1027 范围为
10nm~150nm。
例如， 本发明实施例的 OLED基板还包括设于发光亚像素 102包括的阴 极 1027上的保护层 104。
例如，保护层 104的形成方式可以与现有技术中 OLED基板包括的保护 层的形成方式类似。 例如， 保护层 104范围为 2μηι~3μηι。 例如， 保护层 104 的材料为绝缘材料或者导电材料。 例如， 绝缘材料包括无机非晶绝缘材料， 比如， α-Si (非晶硅） 、 a-SiC (非晶碳化硅） 、 a-SiN (非晶氮化硅） 、 a-C (非晶碳 )和 Si02 (二氧化硅 ) 。
下面将以 OLED基板包括的多个发光亚像素 102为红色发光亚像素、绿 色发光亚像素和蓝色发光亚像素为例， 对在发光亚像素 102包括的同一有机 层不全相等时， 本发明实施例的 OLED基板进行介绍。
实施例一
在本发明实施例一中将对有机层为空穴注入层 1022 的实施方式进行介
^P?。
如图 2所示， 本发明实施例提供的 OLED基板包括衬底基板 201 , 设于 衬底基板 201上的红色发光亚像素 202R、绿色发光亚像素 202G和蓝色发光 亚像素 202B,设于衬底基板 201上未被发光亚像素覆盖的区域的像素分隔墙 203和设于红色发光亚像素 202R、 绿色发光亚像素 202G与蓝色发光亚像素 202B上的保护层 204。
红色发光亚像素 202R包括阳极 2021R、 空穴注入层 202AR、 空穴传输 层 202BR、 有机发光层 202CR、 电子传输层 202DR、 电子注入层 202ER和 阴极 202FR。 绿色发光亚像素 202G包括阳极 2021G、 空穴注入层 202AG、 空穴传输层 202BG、 有机发光层 202CG、 电子传输层 202DG、 电子注入层 202EG和阴极 202FG。 蓝色发光亚像素 202B包括阳极 2021B、 空穴注入层 202AB、 空穴传输层 202BB、 有机发光层 202CB、 电子传输层 202DB、 电子 注入层 202EB和阴极 202FB。
像素分隔墙 203包括亲液膜层 203A1、斥液膜层 203B1、亲液膜层 203 A2、 斥液膜层 203B2、 亲液膜层 203 A3、 斥液膜层 203B3、 亲液膜层 203A4、 斥 液膜层 203B4。
各发光亚像素包括的空穴注入层不全相同。 空穴注入层 202AR最薄， 空 穴注入层 202AG和空穴注入层 202AB相同； 空穴传输层 202BR、 空穴传输 层 202BG和空穴传输层 202BB相同；有机发光层 202CR、有机发光层 202CG 和有机发光层 202CB相同。
阳极 2021R和空穴注入层 202AR的总厚度等于与阳极 2021R和空穴注 入层 202AR对应的像素分隔墙 203所包含的 1层膜层（即 203A1 ) ； 阳极 2021G 和空穴注入层 202AG 的总厚度等于与阳极 2021G 和空穴注入层 202AG对应的像素分隔墙 203 所包含的 3 层膜层（即 203A1、 203B1 和 203A2 ) ； 阳极 2021B和空穴注入层 202AB的实施方式与阳极 2021G和空 穴注入层 202AG的实施方式相同。
需要说明的是， 本发明实施例仅是以与绿色发光亚像素 202G包括的阳 极 2021G和空穴注入层 202AG对应的像素分隔墙 203所包含的膜层数量为 大于 1的奇数为例，对发光亚像素 102包括的空穴注入层 1022不全相同的实 施方式进行的介绍。
在其他示例中， 与红色发光亚像素 202R和 /或绿色发光亚像素 202G和 / 或蓝色发光亚像素 202B包括的阳极和空穴注入层对应的像素分隔墙 203所 包含的膜层数量可以均为大于 1的奇数。
实施例二
本发明实施例二中将对有机层为空穴传输层 1023的实施方式进行介绍。 如图 3所示， 本发明实施例提供的 OLED基板包括衬底基板 301 , 设于 衬底基板 301上的红色发光亚像素 302R、绿色发光亚像素 302G和蓝色发光 亚像素 302B,设于衬底基板 301上未被发光亚像素覆盖的区域的像素分隔墙 303和设于红色发光亚像素 302R、 绿色发光亚像素 302G与蓝色发光亚像素 302B上的保护层 304。
红色发光亚像素 302R包括阳极 3021R、 空穴注入层 302AR、 空穴传输 层 302BR、 有机发光层 302CR、 电子传输层 302DR、 电子注入层 302ER和 阴极 302FR; 绿色发光亚像素 302G包括阳极 3021G、 空穴注入层 302AG、 空穴传输层 302BG、 有机发光层 302CG、 电子传输层 302DG、 电子注入层 302EG和阴极 302FG; 蓝色发光亚像素 302B包括阳极 3021B、 空穴注入层 302AB、 空穴传输层 302BB、 有机发光层 302CB、 电子传输层 302DB、 电子 注入层 302EB和阴极 302FB。
像素分隔墙 303包括亲液膜层 303A1、斥液膜层 303B1、亲液膜层 303 A2、 斥液膜层 303B2、 亲液膜层 303 A3、 斥液膜层 303B3、 亲液膜层 303A4、 斥 液膜层 303B4。
实施例二与实施例一的不同在于， 实施例二中的各发光亚像素包括的空 穴注入层相同， 而各发光亚像素包括的空穴传输层不全相同。 绿色发光亚像 素 302G包括的空穴传输层 302BG小于红色发光亚像素 302R包括的空穴传 输层 302BR; 红色发光亚像素 302R包括的空穴传输层 302BR与蓝色发光亚 像素 302B包括的空穴传输层 302BB相同。
空穴传输层 302BG等于与空穴传输层 302BG对应的像素分隔墙 303所 包含的 2层膜层（即， 303B1和 303A2 )； 空穴传输层 302BR等于与空穴传 输层 302BR对应的像素分隔墙 303所包含的 4层膜层（即， 303B1、 303A2、 303B2和 303A3 ) ； 空穴传输层 302BB的实施方式与空穴传输层 302BR的 实施方式相同。
需要说明的是， 本发明实施例仅是以与红色发光亚像素 302R包括的空 穴传输层 302BR对应的像素分隔墙 303所包含的膜层数量为大于 2的偶数为 例，对发光亚像素 102包括的空穴传输层 1023不全相同的实施方式进行的介
^P?。
在其他示例中， 与红色发光亚像素 202R和 /或绿色发光亚像素 202G和 / 或蓝色发光亚像素 202B包括的空穴传输层对应的像素分隔墙 303所包含的 膜层数量可以均为大于 2的偶数。
实施例三
在本发明实施例中将对有机层为有机发光层 1024的实施方式进行介绍。 如图 4所示， 本发明实施例提供的 OLED基板包括衬底基板 401 , 设于 衬底基板 401上的红色发光亚像素 402R、绿色发光亚像素 402G和蓝色发光 亚像素 402B,设于衬底基板 401上未被发光亚像素覆盖的区域的像素分隔墙 403和设于红色发光亚像素 402R、 绿色发光亚像素 402G与蓝色发光亚像素 402B上的保护层 404。
红色发光亚像素 402R包括阳极 4021R、 空穴注入层 402AR、 空穴传输 层 402BR、 有机发光层 402CR、 电子传输层 402DR、 电子注入层 402ER和 阴极 402FR; 绿色发光亚像素 402G包括阳极 4021G、 空穴注入层 402AG、 空穴传输层 402BG、 有机发光层 402CG、 电子传输层 402DG、 电子注入层 402EG和阴极 402FG; 蓝色发光亚像素 402B包括阳极 4021B、 空穴注入层 402AB、 空穴传输层 402BB、 有机发光层 402CB、 电子传输层 402DB、 电子 注入层 402EB和阴极 402FB。
像素分隔墙 403包括亲液膜层 403A1、斥液膜层 403B1、亲液膜层 403 A2、 斥液膜层 403B2、 亲液膜层 403 A3、 斥液膜层 403B3、 亲液膜层 403A4、 斥 液膜层 403B4。
实施例三与实施例二的不同在于， 实施例三中的各发光亚像素包括的空 穴传输层相同， 而各发光亚像素包括的有机发光层不全相同。 绿色发光亚像 素 402G包括的有机发光层 402CG大于红色发光亚像素 402R包括的有机发 光层 402CR, 红色发光亚像素 402R包括的有机发光层 402CR与蓝色发光亚 像素 402B包括的有机发光层 402CB相同。
有机发光层 402CG等于与有机发光层 402CG对应的像素分隔墙 403所 包含的 4层膜层（即， 403B2、 403 A3、 403B3和 403 A4 )；有机发光层 402CR 等于与有机发光层 402CR对应的像素分隔墙 403所包含的 2层膜层（即，
403B2和 403A3 ) ； 有机发光层 402CB的实施方式与有机发光层 402CR的 实施方式相同。
需要说明的是， 本发明实施例仅是以与绿色发光亚像素 402R包括的有 机发光层 402CG对应的像素分隔墙 403所包含的膜层数量为大于 2的偶数为 例，对发光亚像素 102包括的有机发光层 1024不全相同的实施方式进行的介
^P?。
其他示例中， 与红色发光亚像素 202R和 /或绿色发光亚像素 202G和 /或 蓝色发光亚像素 202B包括的有机发光层对应的像素分隔墙 403所包含的膜 层数量可以均为大于 2的偶数。
本发明实施例的显示装置包括所述的 OLED基板。 本发明实施例还提供了一种 OLED基板的制作方法， 如图 5所示， 本发 明实施例的 OLED基板制作方法， 包括如下步骤：
步骤 501、 在衬底基板上形成多个发光亚像素对应的多个阳极； 步骤 502、 在所述衬底基板上未被阳极覆盖的区域和部分阳极上形成亲 液膜层与斥液膜层交替层叠结构的像素分隔墙；
步骤 503、 在阳极上未被像素分隔墙覆盖的区域依次形成空穴注入层、 空穴传输层和有机发光层。
至少存在两个发光亚像素， 其对应的空穴注入层、 空穴传输层和有机发 光层中至少存在一层的层厚不相等， 且任意发光亚像素的空穴注入层、 空穴 传输层和有机发光层的上表面与所述像素分隔墙的其中一层亲液膜层的上表 面平齐。
例如， 在步骤 501中， 在衬底基板上形成多个阳极， 包括： 在例如基板 上形成透明电极导电薄膜， 并对所述透明电极导电薄膜进行图形化处理。
例如， 在例如基板上形成的多个发光亚像素对应的多个阳极需要分别与 发光亚像素对应的驱动晶体管的漏电极相连。
例如， 在步骤 502中， 在衬底基板上未被阳极覆盖的区域和部分阳极上 形成像素分隔墙， 包括： 通过多次涂覆或多次气相沉积， 在衬底基板上未被 阳极覆盖的区域和部分阳极上形成多层交替层叠的亲液性的薄膜与斥液性的 薄膜后， 对形成的多层交替层叠的亲液性的薄膜与斥液性的薄膜进行一次性 的图案化处理； 或者， 在衬底基板上未被阳极覆盖的区域和部分阳极上逐次 涂覆或气相沉积多层交替层叠的亲液性的薄膜与斥液性的薄膜中的每层薄膜 后， 对涂覆或气相沉积的每层薄膜进行图案化处理。
下面将分别对上述两种形成像素分隔墙的方法的示例进行详细介绍。 方法一、 通过多次涂覆或多次气相沉积， 在衬底基板上未被阳极覆盖的 区域和部分阳极上形成多层交替层叠的亲液性的薄膜与斥液性的薄膜后， 对 形成的多层交替层叠的亲液性的薄膜与斥液性的薄膜进行一次性的图案化处 理。
需要说明的是， 在通过涂覆法形成多层交替层叠的亲液性的薄膜与斥液 性的薄膜时， 采用的相邻的上一层薄膜的溶剂不能对已经涂覆固化的相邻的 下一层薄膜进行再溶解。 较佳地， 在形成像素分隔墙的薄膜的材料为无机材料时， 通过气相沉积 法， 在村底基板上未被阳极覆盖的区域和部分阳极上形成多层交替层叠的亲 液性的薄膜与斥液性的薄膜。
例如， 任何气相沉积法均适用于本发明， 比如 CVD (化学气相沉积） 、 PVD (物理气相沉积） 、 原子层沉积法和蒸发法等。
例如， 在采用气相沉积法时， 在村底基板上未被阳极覆盖的区域和部分 阳极上形成多层交替层叠的亲液性的薄膜与斥液性的薄膜时， 可以通过控制 形成像素分隔墙的薄膜的材料的沉积速率， 实现控制形成的薄膜的浸润性。
例如， 当薄膜的沉积速率较低时， 沉积出的薄膜通常较致密， 润湿性较 强； 当膜的沉积速率较高时， 膜的表面较稀疏和粗糙， 润湿性较差。
例如， 图案化处理的方法包括湿法刻蚀和干法刻蚀。
例如， 在形成像素分隔墙的薄膜的材料为光敏性聚合物材料时， 采用湿 法刻蚀对多层交替层叠的亲液性的薄膜与斥液性的薄膜进行图案化处理； 以 及在形成像素分隔墙的薄膜的材料为非光敏性聚合物或无机材料时， 采用干 法刻蚀对多层交替层叠的亲液性的薄膜与斥液性的薄膜进行图案化处理。
例如，本发明实施例中湿法刻蚀的方法可和现有的湿法刻蚀的方法类似， 包括曝光、 显影和刻蚀三个步骤。 比如， 等离子刻蚀和反应离子刻蚀等。
实施中， 采用对形成的多层交替层叠的亲液性的薄膜与斥液性的薄膜进 行一次性的图案化处理的方法产生的成本较低。
下面将以涂覆法形成图 2中的像素分隔墙为例，对方法一进行详细介绍。 步骤 Ml、 通过涂覆法， 在形成有阳极 602的基板 601上形成亲液性的 薄膜 A1 , 如图 6A所示；
在基板 601上形成亲液性的薄膜 A1后，可以根据亲液性的薄膜 A1的性 能， 决定是否进行干燥、 除去溶剂和退火等步骤。
步骤 M2、 通过涂覆法， 在亲液性的薄膜 A1上形成斥液性的薄膜 B1 , 如图 6B所示。
在亲液性的薄膜 A1上形成斥液性的薄膜 B1后，可以根据斥液性的薄膜 B1的性能， 决定是否进行干燥、 除去溶剂和退火等步骤。 步骤 M3、 通过涂覆法， 在斥液性的薄膜 B1上形成亲液性的薄膜 A2, 如图 6C所示。
步骤 M4、 通过涂覆法， 在亲液性的薄膜 A2上依次形成斥液性的薄膜 B2、 亲液性的薄膜 A3、 斥液性的薄膜 B3、 亲液性的薄膜 A4和斥液性的薄 膜 B4, 如图 6D所示。
步骤 M5、 对形成的多层交替层叠的亲液性的薄膜与斥液性的薄膜进行 一次性的图案化处理， 实现在基板上未被阳极覆盖的区域和部分阳极上形成 像素分隔墙（ 203A1、 203B1、 203A2、 203B2、 203A3、 203B3、 203A4和 203B4 ), 如图 6E所示。
方法二、 在基板上未被阳极覆盖的区域和部分阳极上逐次涂覆或气相沉 积多层交替层叠的亲液性的薄膜与斥液性的薄膜中的每层薄膜后， 对涂覆或 气相沉积的每层薄膜进行图案化处理。
方法二的实施方式与方法一的实施方式类似， 只不过形成像素分隔墙中 的各层的顺序不同， 下面将以涂覆法形成图 2中的像素分隔墙为例， 对方法 二进行详细介绍。
步骤 Nl、通过涂覆法，在形成有阳极 702的基板 701上形成亲液性的薄 膜 A1 , 如图 7A所示。
步骤 N2、 对涂覆的薄膜 A1进行湿法刻蚀， 得到亲液膜层 203A1 , 如图 7B所示。
步骤 N3、 通过涂覆法， 在亲液膜层 203A1和阳极上形成斥液性的薄膜
B1 , 如图 7C所示。
步骤 N4、 对涂覆的薄膜 B1进行湿法刻蚀， 得到斥液膜层 203B1 , 如图 7D所示。
步骤 N5、 按照上述形成亲液膜层 203A1的方法， 在斥液膜层 203B1上 依次形成亲液膜层 203 A3、 斥液膜层 203B3、 亲液膜层 203A4和斥液膜层 203B4, 如图 7E所示。
例如， 在步骤 503中， 在阳极上未被像素分隔墙覆盖的区域形成空穴注 入层， 包括： 采用涂覆法， 在阳极上未被像素分隔墙覆盖的区域形成空穴注 入层。
比如， 通过喷墨的方法将形成空穴注入层的有机材料设于阳极上未被像 素分隔墙覆盖的区域， 并对设于阳极上未被像素分隔墙覆盖的区域的有机材 料进行干燥处理。
干燥处理的气氛和温度与形成空穴注入层的材料有关。
在空穴注入层上形成空穴传输层的实施方式与在阳极上未被像素分隔墙 覆盖的区域形成空穴注入层的实施方式类似， 在此不再赘述。
例如， 对设于空穴注入层上的形成空穴传输层的有机材料进行干燥处理 的气氛为 N2 (氮气）或大气氛围。
例如， 对设于空穴注入层上的形成空穴传输层的有机材料进行干燥处理 的温度为 150摄氏度〜 300摄氏度， 较佳地， 对设于空穴注入层上的形成空穴 传输层的有机材料进行干燥处理的温度为 180摄氏度〜 250摄氏度。
例如， 对于红色发光亚像素或绿色发光亚像素的有机发光层， 在空穴传 成空穴注入层的实施方式类似， 在此不再赘述。
例如， 对于蓝色发光亚像素的有机发光层， 在空穴传输层上形成有机发 例如， 在形成有机发光层的有机材料为聚合物材料时， 在空穴传输层上 形成有机发光层的实施方式与在阳极上未被像素分隔墙覆盖的区域形成空穴 注入层的实施方式类似； 在形成有机发光层的有机材料为小分子材料时， 可 以采用气相沉积法， 在空穴传输层上形成有机发光层。
例如， 在步骤 503之后， 上述方法还包括： 采用气相沉积法， 在多个发 光亚像素上方依次形成电子传输层、 电子注入层、 阴极和保护层。
例如， 在多个发光亚像素上方依次形成电子传输层、 电子注入层、 阴极 和保护层的方式与现有的在多个发光亚像素上方依次形成电子传输层、 电子 注入层、 阴极和保护层的方式类似。
例如，在形成保护层时，粒子产生的能量对 OLED基板的影响可以忽略。 较佳地，保护层的致密性要足够好，能够有效的阻断水汽和氧气的渗透， 例如， 保护层阻止水汽的 WVTR (渗透速率）要小于 10-5g/ m2/day (克每平 方米每 24小时） 。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1、 一种 OLED基板， 包括衬底基板、 设于所述衬底基板上的多个发光 亚像素和设于所述衬底基板上用于分隔所述发光亚像素的像素分隔墙， 其中， 所述发光亚像素每个包括依次层叠于所述基板上的阳极、 空穴注 入层、 空穴传输层和有机发光层，
所述像素分隔墙包括交替层叠的亲液膜层与斥液膜层， 所述像素分隔墙 的最下层是亲液膜层， 所述像素分隔墙的最上层是斥液膜层，
其中， 至少两个发光亚像素对应的空穴注入层、 空穴传输层和有机发光 层中至少存在一层的层厚不相等， 且任意发光亚像素的空穴注入层、 空穴传 输层和有机发光层的上表面与所述像素分隔墙的其中一层亲液膜层的上表面 平齐。
2、 如权利要求 1所述的 OLED基板， 其中， 与所述阳极和空穴注入层 对应的像素分隔墙所包含的膜层数量为奇数； 以及
与所述空穴传输层或有机发光层对应的像素分隔墙所包含的膜层数量为 偶数。
3、 如权利要求 2所述的 OLED基板， 其中， 所述至少两个发光亚像素 对应的空穴注入层的层厚不相等；
与所述阳极和最厚的空穴注入层对应的像素分隔墙所包含的膜层数量大 于 1 , 且与所述阳极和最薄的空穴注入层对应的像素分隔墙所包含的膜层数 量不小于 1。
4、 如权利要求 2或 3所述的 OLED基板， 其中， 所述至少两个发光亚 像素对应的空穴传输层的层厚不相等；
与最厚的空穴传输层对应的像素分隔墙所包含的膜层数量大于 2, 且与 最薄的空穴传输层对应的像素分隔墙所包含的膜层数量不小于 2。
5、 如权利要求 2-4任一所述的 OLED基板， 其中， 所述至少两个发光 亚像素对应的有机发光层的层厚不相等；
与最厚的有机发光层对应的像素分隔墙所包含的膜层数量大于 2, 且与 最薄的有机发光层对应的像素分隔墙所包含的膜层数量不小于 2。
6、 如权利要求 1-5任一所述的 OLED基板， 其中， 所述亲液膜层或所 述斥液膜层范围为 5nm ~ 100nm。
7、 如权利要求 1-6任一所述的 OLED基板， 其中， 所述亲液膜层的材 料为沉积速率可控的无机材料和 /或带有极性基团的有机材料。
8、 如权利要求 1-7任一所述的 OLED基板， 其中， 所述斥液膜层的材 料为沉积速率可控的无机材料和 /或具有低表面能的有机材料。
9、 一种显示装置， 包括如权利要求 1~7任一所述的 OLED基板。
PCT/CN2013/080859 2013-05-30 2013-08-06 Oled基板和显示装置 Ceased WO2014190616A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/347,390 US9640597B2 (en) 2013-05-30 2013-08-06 Organic light-emitting diode (OLED) substrate and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310210261.1 2013-05-03
CN201310210261.1A CN103337594B (zh) 2013-05-30 2013-05-30 一种oled基板和显示装置

Publications (1)

Publication Number Publication Date
WO2014190616A1 true WO2014190616A1 (zh) 2014-12-04

Family

ID=49245724

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/080859 Ceased WO2014190616A1 (zh) 2013-05-30 2013-08-06 Oled基板和显示装置

Country Status (3)

Country Link
US (1) US9640597B2 (zh)
CN (1) CN103337594B (zh)
WO (1) WO2014190616A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117082914A (zh) * 2023-08-31 2023-11-17 惠科股份有限公司 显示面板、显示面板的制造方法及电子装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10038034B2 (en) * 2014-06-20 2018-07-31 Joled Inc. Organic light-emitting device and display apparatus
CN105355798A (zh) * 2015-11-25 2016-02-24 京东方科技集团股份有限公司 有机电致发光器件及其制作方法、显示装置
CN105428391B (zh) 2015-12-30 2017-12-22 天马微电子股份有限公司 像素结构及其制作方法、显示面板
CN107017346B (zh) * 2016-01-27 2018-10-30 上海和辉光电有限公司 一种有机发光二极管器件及其显示装置
CN105870157B (zh) * 2016-05-30 2019-03-12 深圳市华星光电技术有限公司 用于打印成膜的凹槽结构及其制作方法
CN106356469A (zh) * 2016-09-05 2017-01-25 Tcl集团股份有限公司 一种3d打印反置结构的量子点发光二极管及制备方法
KR102840689B1 (ko) * 2016-12-16 2025-07-30 엘지디스플레이 주식회사 전계발광소자 및 이를 포함하는 전계발광 표시장치
CN107591432B (zh) * 2017-09-27 2020-05-26 京东方科技集团股份有限公司 像素界定层、显示基板及制造方法、显示装置
CN107887423B (zh) * 2017-11-14 2019-08-13 合肥鑫晟光电科技有限公司 一种显示面板、其制备方法及显示装置
CN108470752A (zh) * 2018-03-27 2018-08-31 京东方科技集团股份有限公司 像素界定层及其制造方法和显示基板
CN108919605B (zh) * 2018-07-27 2021-12-21 京东方科技集团股份有限公司 光阻组合物、像素界定层、其制备方法及应用
EP3660907B1 (en) 2018-11-28 2023-03-22 Samsung Display Co., Ltd. Display device
KR102784946B1 (ko) * 2019-06-11 2025-03-21 엘지디스플레이 주식회사 전자장치
KR20220100763A (ko) 2021-01-08 2022-07-18 삼성디스플레이 주식회사 표시 장치의 제조 방법
CN113161499B (zh) * 2021-04-13 2022-06-17 浙江大学 光电器件及其制造方法
CN113745406B (zh) * 2021-11-04 2022-02-08 惠科股份有限公司 像素结构及其制备方法和显示面板
CN114141793B (zh) * 2021-11-30 2024-09-10 湖北长江新型显示产业创新中心有限公司 一种显示面板及其制备方法、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123234A (ja) * 2005-09-27 2007-05-17 Toppan Printing Co Ltd 有機エレクトロルミネッセンス素子基板及び有機エレクトロルミネッセンス素子
JP2007305318A (ja) * 2006-05-09 2007-11-22 Canon Inc 有機ｅｌ素子アレイ及び有機ｅｌ表示装置
KR20100021281A (ko) * 2008-08-14 2010-02-24 엘지디스플레이 주식회사 유기 발광 표시 장치
CN102386206A (zh) * 2010-08-25 2012-03-21 索尼公司 有机电致发光显示单元和电子设备
CN203277508U (zh) * 2013-05-30 2013-11-06 京东方科技集团股份有限公司 一种oled基板和显示装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3646510B2 (ja) * 1998-03-18 2005-05-11 セイコーエプソン株式会社 薄膜形成方法、表示装置およびカラーフィルタ
JP4466594B2 (ja) 2005-03-30 2010-05-26 セイコーエプソン株式会社 有機ｅｌ装置及び有機ｅｌ装置の製造方法
JP4556838B2 (ja) 2005-05-13 2010-10-06 セイコーエプソン株式会社 バンクの形成方法および膜パターンの形成方法
GB0517195D0 (en) 2005-08-23 2005-09-28 Cambridge Display Tech Ltd Molecular electronic device structures and fabrication methods
JP2007286469A (ja) 2006-04-19 2007-11-01 Seiko Epson Corp 膜パターンの形成方法、アクティブマトリクス基板の製造方法、デバイス、電気光学装置、及び電子機器
JP2008004376A (ja) * 2006-06-22 2008-01-10 Seiko Epson Corp デバイス、薄膜形成方法及びデバイスの製造方法並びに電子機器
JP4333728B2 (ja) 2006-09-14 2009-09-16 セイコーエプソン株式会社 電気光学装置の製造方法および電子機器
KR100922763B1 (ko) 2008-03-13 2009-10-21 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
GB2458454B (en) 2008-03-14 2011-03-16 Cambridge Display Tech Ltd Electronic devices and methods of making the same using solution processing techniques
JP5766422B2 (ja) * 2010-10-05 2015-08-19 株式会社Ｊｏｌｅｄ 有機ｅｌ表示装置およびその製造方法
CN102184937B (zh) * 2011-05-03 2013-08-21 昆山维信诺显示技术有限公司 一种有机电致发光器件及其制备方法
KR101932564B1 (ko) * 2011-11-29 2018-12-28 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20140064328A (ko) 2012-11-20 2014-05-28 엘지디스플레이 주식회사 유기전계 발광소자 및 이의 제조 방법
JP6233401B2 (ja) 2013-02-22 2017-11-22 コニカミノルタ株式会社 有機発光素子の製造方法
CN103187434A (zh) 2013-04-01 2013-07-03 京东方科技集团股份有限公司 有机电致发光器件及制备有机电致发光器件的方法
KR102114314B1 (ko) 2013-06-26 2020-05-25 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
CA2856942A1 (en) 2014-07-16 2016-01-16 Trican Well Service Ltd. Aqueous slurry for particulates transportation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123234A (ja) * 2005-09-27 2007-05-17 Toppan Printing Co Ltd 有機エレクトロルミネッセンス素子基板及び有機エレクトロルミネッセンス素子
JP2007305318A (ja) * 2006-05-09 2007-11-22 Canon Inc 有機ｅｌ素子アレイ及び有機ｅｌ表示装置
KR20100021281A (ko) * 2008-08-14 2010-02-24 엘지디스플레이 주식회사 유기 발광 표시 장치
CN102386206A (zh) * 2010-08-25 2012-03-21 索尼公司 有机电致发光显示单元和电子设备
CN203277508U (zh) * 2013-05-30 2013-11-06 京东方科技集团股份有限公司 一种oled基板和显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117082914A (zh) * 2023-08-31 2023-11-17 惠科股份有限公司 显示面板、显示面板的制造方法及电子装置

Also Published As

Publication number Publication date
CN103337594B (zh) 2016-02-10
CN103337594A (zh) 2013-10-02
US20150028310A1 (en) 2015-01-29
US9640597B2 (en) 2017-05-02

Similar Documents

Publication Publication Date Title
CN103337594B (zh) 一种oled基板和显示装置
CN103187434A (zh) 有机电致发光器件及制备有机电致发光器件的方法
JP6001595B2 (ja) 有機エレクトロルミネセンスデバイス
CN104952904B (zh) 气密密封式孤立oled像素
US9048459B2 (en) Display device and method of manufacturing the same
CN105206753B (zh) 有机发光元件
CN103887322B (zh) 有机发光显示装置及其制造方法
CN104576958B (zh) 有机发光装置
JP5683094B2 (ja) 有機エレクトロルミネッセンス素子及びこれを用いた多色表示装置
EP1712109A4 (en) FLEXIBLE ELECTROLUMINESCENT FACILITIES
US20060181199A1 (en) Organic light emitting device comprising multilayer cathode
JP2010140980A (ja) 機能性有機物素子及び機能性有機物装置
CN102386206A (zh) 有机电致发光显示单元和电子设备
JP5124083B2 (ja) 有機電界発光表示装置及びその製造方法
US20170194589A1 (en) Organic light emitting device and method of fabricating the same, and display device
CN103098551A (zh) 电致发光元件、显示装置以及照明装置
CN103824969A (zh) 具有多层金属复合电极的有机电致发光器件
CN104205395B (zh) 具有至少一个金属生长层的电子结构以及用于制造电子结构的方法
CN203277508U (zh) 一种oled基板和显示装置
WO2016147639A1 (ja) 有機ｅｌ表示装置およびその製造方法
CN1784102A (zh) 有机电致发光显示器装置和制备该装置的方法
TW200529437A (en) Organic electroluminescence device and fabricating method thereof
KR102673970B1 (ko) 유기발광 표시장치 그 제조방법
JP4491894B2 (ja) 有機エレクトロルミネッセンス表示素子およびその製造方法
JP2010015786A (ja) 多色発光表示装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14347390

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13885972

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 05.02.2016)

122 Ep: pct application non-entry in european phase

Ref document number: 13885972

Country of ref document: EP

Kind code of ref document: A1