WO2014184824A1 - Dispositif de traitement par plasma et son procédé d'étanchéité - Google Patents

Dispositif de traitement par plasma et son procédé d'étanchéité Download PDF

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Publication number
WO2014184824A1
WO2014184824A1 PCT/JP2013/003107 JP2013003107W WO2014184824A1 WO 2014184824 A1 WO2014184824 A1 WO 2014184824A1 JP 2013003107 W JP2013003107 W JP 2013003107W WO 2014184824 A1 WO2014184824 A1 WO 2014184824A1
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WO
WIPO (PCT)
Prior art keywords
space
conductor
plasma
inner conductor
processing chamber
Prior art date
Application number
PCT/JP2013/003107
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English (en)
Japanese (ja)
Inventor
平山　昌樹
Original Assignee
国立大学法人東北大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 国立大学法人東北大学 filed Critical 国立大学法人東北大学
Priority to JP2013544605A priority Critical patent/JP5441083B1/ja
Priority to PCT/JP2013/003107 priority patent/WO2014184824A1/fr
Priority to TW103117005A priority patent/TW201506985A/zh
Publication of WO2014184824A1 publication Critical patent/WO2014184824A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas

Definitions

  • the present invention relates to a plasma processing apparatus for performing plasma processing on a substrate and a sealing method thereof.
  • plasma processing apparatuses are used for thin film formation and etching.
  • the present inventors have proposed one disclosed in Patent Document 1 and the like.
  • FIG. 7 is a cross-sectional view schematically showing a plasma processing apparatus of the same type as that of Patent Document 1.
  • This apparatus is connected to a metal processing chamber 10 that defines a sealed space 11, a susceptor 14 installed in the processing chamber 10 for placing a substrate 16, and a lid 13 that forms the upper part of the processing chamber 10.
  • the inner conductor 21 of the coaxial tube 20 extends to the upper surface of the dielectric plate 34 through the opening 13 h of the lid 13, and the flange at the lower end of the cylindrical outer conductor 22 is connected to the periphery of the opening 13 h of the lid 13. Yes.
  • the electrode 36 is provided so as to cover most of the lower surface of the dielectric plate 34 so that only the outer peripheral edge 34p of the dielectric plate 34 is exposed to the sealed space 11.
  • an O-ring 40 having heat resistance is installed between the lower surface of the lid 13 and the dielectric plate 34.
  • a synthetic rubber excellent in heat resistance and plasma resistance, for example, perfluoroelastomer is used.
  • a microwave introduced from an unillustrated microwave supply source to the inner conductor 21 propagates through the coaxial waveguide 20, passes through the dielectric plate 34, and conducts a conductor surface wave from the outer peripheral edge 34 p of the dielectric plate 34. It propagates along the surface 36f of the electrode 36 as TM.
  • the plasma is excited by the microwave as the conductor surface wave TM propagating on the surface 36f of the electrode 36.
  • an O-ring 40 made of heat-resistant elastomer is used to seal the closed space 11.
  • the O-ring 40 is disposed in the microwave path as described above, it is heated to about 200 ° C. during the plasma processing.
  • the O-ring 40 is exposed to oxygen radicals or hydrogen radicals formed by excited plasma under a heated state to cause a chemical reaction, and the gasification substance leaks into the sealed space 11. It was.
  • the gasified substance leaking into the sealed space 11 of the processing chamber 10 is taken into the film on the substrate 16 formed by plasma processing in the processing chamber 10, and there is a problem that the characteristics of the film are affected. .
  • the present invention provides a plasma processing apparatus capable of improving the characteristics of a film formed by plasma processing, and a sealing method applied to the plasma processing apparatus.
  • the plasma processing apparatus includes a processing chamber that defines a sealed space, a plasma forming electrode provided in the sealed space, and an opening formed in the processing chamber from the outside of the processing chamber.
  • An inner conductor extending toward the forming electrode, surrounding the inner conductor, defining an air gap between the inner conductor and the outer conductor defining the opening; and the inner conductor and the outer conductor
  • a seal member formed of an insulator for connecting the gap to an atmosphere-side space and a space communicating with the sealed space; and, of the gap, the sealed space side with respect to the seal member
  • a discharge preventing member made of an insulating material that fills the space formed in the substrate.
  • the plasma formation is performed through a processing chamber defining a sealed space, a plasma forming electrode provided in the sealed space, and an opening formed in the processing chamber from the outside of the processing chamber.
  • a plasma processing apparatus sealing method comprising: an inner conductor extending toward an electrode; and an outer conductor that surrounds the inner conductor, defines an air gap between the inner conductor, and defines the opening
  • a seal member formed of an insulator is connected to the inner conductor and the outer conductor, the gap is separated into a space on the atmosphere side and a space communicating with the sealed space, and the seal among the gaps A space formed on the sealed space side with respect to the member is filled with an insulator.
  • the discharge prevention member fills the space formed on the sealed space side with respect to the sealing member, so that when the space is decompressed, the discharge is generated between the inner conductor and the outer conductor. As a result, it is possible to stably excite high-density plasma.
  • FIG. 1 is a cross-sectional view schematically showing a plasma processing apparatus according to an embodiment of the present invention.
  • the top view seen from the lower surface side of the electrode of FIG. 1 is a cross-sectional view schematically showing a plasma processing apparatus according to an embodiment of the present invention.
  • the expanded sectional view of the principal part of FIG. The perspective view of a conductive elastic member. Sectional drawing of the VI-VI line direction of FIG. Sectional drawing which shows the outline of the plasma processing apparatus which used the elastomer O-ring around the formation area of plasma.
  • a plasma processing apparatus 1 (hereinafter referred to as an apparatus 1) shown in FIGS. 1 and 2 is used for various plasma processes such as plasma CVD (Chemical Vapor Deposition).
  • This apparatus 1 has the same basic structure as the plasma processing apparatus described in FIG. That is, the apparatus 1 includes the processing chamber 10, the susceptor 14, the coaxial tube 20, the dielectric plate 34, and the electrode 36 as described in FIG.
  • the seal member 60, the seal metals 70 and 71, and the discharge prevention member 100 are included. not exist.
  • the processing chamber 10 is formed of a conductive material such as aluminum alloy or stainless steel, and is connected to a reference potential.
  • An exhaust port 20 for exhausting the atmosphere in the processing chamber 10 is provided at the bottom of the processing chamber 10, and an exhaust device such as a vacuum pump (not shown) installed outside the processing chamber 10 is connected to the exhaust port 20. Is done. With this exhaust device, the sealed space 11 is decompressed.
  • An elastomer O-ring 50 is provided between the outer peripheral edge of the lower surface of the upper lid 13 and the upper end portion of the processing chamber 10 to seal between the upper lid 13 and the processing chamber 10. Since this O-ring 50 is sufficiently separated from the plasma formation region, it does not cause a chemical reaction with oxygen radicals or hydrogen radicals formed by the plasma.
  • the dielectric plate 34 is formed of a material such as aluminum oxide and is installed on the lower surface of the upper lid 13.
  • the plasma forming electrode 36 is formed of a material such as an aluminum alloy, and is disposed on the lower surface of the dielectric plate 34.
  • the plasma forming electrode 36 is fixed to the upper lid 13 together with the dielectric plate 34 by a fastening member such as a bolt.
  • the dielectric plate 34 and the plasma forming electrode 36 have a square outer shape, and are formed so that the dielectric plate 34 is slightly larger than the plasma forming electrode 36. Of 34, only the outer peripheral edge 34 p is exposed to the sealed space 11.
  • the processing chamber 10 including the upper lid 13 is formed of a conductive material such as an aluminum alloy and is grounded.
  • the processing chamber 10 defines a sealed space 11 that can be decompressed.
  • the susceptor 14 is made of, for example, aluminum nitride, and electrostatically attracts the substrate 16 to be placed and supplies a power supply unit (not shown) for applying a predetermined bias voltage, and heats the substrate 16 to a predetermined temperature (not shown). Built-in heater.
  • the coaxial tube 20 includes a round bar-shaped inner conductor 21 extending toward the electrode 36 and a cylindrical outer conductor 22 surrounding the inner conductor 21, and a microwave (not shown) provided outside the processing chamber 10. Connected to a supply source and receives microwave power.
  • the inner conductor 21 and the outer conductor 22 are made of a low resistance material such as oxygen-free copper.
  • the inner conductor 21 extends to the upper surface of the dielectric plate 34 through the opening 13 h of the lid 13, and the lower end surface of the inner conductor 21 is adjacent to the upper surface of the dielectric plate 34. It is desirable to provide a narrow gap of about 0.2 to 0.4 mm at room temperature between the inner conductor 21 and the dielectric plate 34.
  • the flange at the lower end of the outer conductor 22 is connected to the periphery of the opening 13 h of the lid 13.
  • the flange at the lower end of the external conductor 22 is fixed to the lid 13 and both are electrically connected.
  • the opening 13h formed in the lid 13 has an inner diameter that is approximately the same as the inner diameter of the outer conductor 22, and a gap 23 is formed between the inner conductor 21, the outer conductor 22, and the opening 13h. . That is, the opening 13h of the lid 13 defines a part of the gap 23 and constitutes a part of the outer conductor of the present invention.
  • the gap 23 communicates with the atmosphere.
  • the seal member 60 is formed in an annular shape and is disposed in the gap 23 between the inner conductor 21 and the outer conductor 22, and separates the gap 23 into a space on the atmosphere side and a space communicating with the sealed space 11.
  • the seal member 60 is formed of an insulator such as aluminum oxide.
  • the space between the inner peripheral portion at the upper end of the seal member 60 and the outer surface of the inner conductor 21 is sealed with a seal metal 70, and the space between the outer peripheral portion at the lower end of the seal member 60 and the inner wall surface of the opening 13f is sealed metal. 71 is sealed.
  • a metal having a relatively low coefficient of thermal expansion is used for the seal metals 70 and 71.
  • the seal metal 70 is brazed to the inner conductor 70 and the seal member 60, and the seal metal 71 is brazed to the seal member 60 and welded to the inner wall surface of the opening 13f.
  • the seal metals 70 and 71 are formed in a cylindrical shape in order to secure a certain dimension of the inner conductor 21 in the central axis direction. This is because the members connected to the seal metals 70 and 71 are deformed due to thermal expansion, so that stress repeatedly acts on the seal metals 70 and 71. However, by securing a certain dimension in the central axis direction, This is to prevent the seal metals 70 and 71 from being broken.
  • the discharge preventing member 100 is formed in a ring shape, and the diameter of the through hole 100a formed in the center is formed so that the inner conductor 70 is fitted, and the outer peripheral surface 100b on the upper end side is an annular sealing metal 70.
  • the outer peripheral surface 100c on the lower end side is formed so as to fit on the inner wall surface of the opening 13h of the upper lid 13.
  • the height of the discharge preventing member 100 (the dimension of the inner conductor 70 in the central axis direction) is substantially the same as the distance between the lower surface of the seal member 60 and the upper surface of the dielectric plate 34.
  • the discharge preventing member 100 is formed to have a size that fills the space SP, which is a part of the gap 23, defined by the sealing member 60, the sealing metal 71, the inner wall surface of the opening 13h, and the upper surface of the dielectric plate 34.
  • the discharge prevention member 100 is formed of an insulator, and it is preferable to use a material having low microwave absorption.
  • quartz, aluminum oxide, fluorocarbon resin (trade name: Teflon (registered trademark)) or the like can be used as a material for forming the discharge preventing member 100.
  • the above-described space SP is sealed with respect to the air gap 23 by the seal member 60 and the seal metals 70 and 71 and communicates with the sealed space 11 of the processing chamber 10.
  • the sealed space 11 is depressurized and the space SP is also depressurized.
  • the microwave is It propagates through the coaxial tube 20, passes through the dielectric plate 34, and propagates from the outer peripheral edge 34p of the dielectric plate 34 along the surface 36f of the electrode 36 as a conductor surface wave TM.
  • the plasma is excited by the microwave as the conductor surface wave TM propagating on the surface 36f of the electrode 36.
  • FIGS. 3 to 6 the same reference numerals are used for the same components as those in the first embodiment.
  • the present embodiment other aspects of the discharge preventing member and other aspects of the coaxial tube will be described.
  • the abnormal discharge can be prevented by filling the space SP formed above the plasma forming electrode 36 in the sealed gap 23 with the discharge preventing member.
  • the plasma processing apparatus 1A (hereinafter referred to as apparatus 1A) according to the present embodiment is the first discharge preventing member 100A formed as the discharge preventing member so as to match the shape of the space where the abnormal discharge occurs.
  • the 2nd discharge prevention member 100B formed so that it may have fluidity.
  • the seal member 60A is connected to the inner conductor 21A by a sealing metal 70A, and is connected to the outer peripheral edge of the opening 13h of the upper lid 13 by a sealing metal 71A.
  • the space 23 is separated from the atmosphere side and the electrode 36 side by the seal member 60A and the sealing metals 70A and 71A, and a space communicating with the sealed space 11 is formed on the electrode 36 side.
  • the space SP3 formed between the lower end surface of the seal member 60A and the upper surface of the dielectric plate 34 is formed by the first discharge preventing member 100A made of a dielectric formed in a ring shape so as to match the space SP3. Buried.
  • the second discharge member 100B includes a space SP1 formed between the inner conductor 21A and the inner peripheral surface of the seal member 60A, the seal member 60A, the seal metal 71A, the upper lid 13, and the first discharge prevention member 100A. Is housed in a space SP2 surrounded by
  • the second discharge member 100B is a large number of small particles (for example, a spherical shape having a diameter of about 1 mm) formed of aluminum oxide, fluorocarbon resin (trade name: Teflon (registered trademark)), quartz, or the like. Has fluidity. For this reason, it is possible to fill the space according to the shape of the space to be accommodated, and it is not necessary to process the insulator so as to match the shape of the space to be accommodated.
  • the second discharge member 100B is not limited to a granular body, and may be a powder or a liquid. In the case of a liquid, the space may be filled with an insulating liquid having a small dielectric loss in the microwave band, for example, a fluorine-based liquid (trade name: Fluorinert, Galden, etc.).
  • a slight gap is formed between the lower end surface of the inner conductor 21 and the upper surface of the dielectric plate 34.
  • the load impedance from the coaxial tube 20 side to the electrode 36 changes greatly, and it becomes difficult to control the power supplied to the plasma.
  • a gap is formed between the inner conductor and the dielectric plate, abnormal discharge may occur.
  • the apparatus 1A is provided with a movable conductor plate 21B between the lower end surface of the inner conductor 21A constituting the coaxial tube 20A and the upper surface of the dielectric plate 34.
  • a conductive elastic member 150 is provided between the plate 21B and the lower end surface of the internal conductor 21A.
  • a sirocco fan 200 for air-cooling the inner conductor 21A is attached to the outer peripheral surface of the cylindrical outer conductor 22 constituting the coaxial pipe 20A.
  • the movable conductor plate 21B is formed in a disk shape having substantially the same diameter as the inner conductor 21A, and a ring-shaped groove 21Bt for receiving the conductive elastic member 150 is formed on the upper surface.
  • the movable conductor plate 21B is formed of a low-resistance material such as copper, like the internal conductor 21A. As shown in FIG. 4, a gap Gp is formed between the lower end surface of the inner conductor 21 ⁇ / b> A and the upper surface of the movable conductor plate 21 ⁇ / b> B by inserting the conductive elastic member 150.
  • the conductive elastic member 150 is a spring in which a spirally wound wire is formed in a ring shape.
  • the conductive elastic member 150 is made of a metal such as stainless steel or phosphor bronze and has conductivity. Due to the presence of the conductive elastic member 150, the inner conductor 21A and the movable conductor plate 21B are always electrically connected.
  • a belt-shaped spring material is spirally wound to form a ring shape, a flat spring material is processed into a leaf spring, nickel, Those plated with gold, silver or the like can be used. Also, a resin O-ring with metal plating can be used.
  • the conductive elastic member 150 pushes down the movable conductor plate 21B with an appropriate elastic force, and brings the movable conductor plate 21B into close contact with the dielectric plate 34. Even if the lower surface of the inner conductor 21A is moved downward due to the thermal expansion of the inner conductor 21A, and even if the processing dimensions vary, the movable conductor plate 21B and the dielectric plate 21B It is possible to prevent a gap from being generated.
  • an inlet 22h1 for taking in cooling air supplied from the sirocco fan 200 into the outer conductor 22A is provided on the wall surface of the outer conductor 22A to which the exhaust port 201 of the sirocco fan 200 is connected.
  • a plurality of outlets 22h2 for discharging the air from the outer conductor 22A to the outside are formed on the opposite side of the inner conductor 21A on the wall surface of the outer conductor 22A from the inlet 22h1.
  • the temperature of the inner conductor 21A can be made substantially constant. If the temperature rise or temperature change of the inner conductor 21A can be suppressed, deformation of the inner conductor 21A due to heat can be suppressed, and the size of the gap Gp between the lower end surface of the inner conductor 21A and the upper surface of the movable conductor plate 21B can be made constant. Can be maintained, and fluctuations in load impedance can be suppressed.
  • the seal member is connected by using the seal metal. Is possible.
  • the sealing member and the discharge preventing member are formed of different materials, but may be formed of the same material. Moreover, although the sealing member and the discharge preventing member are separate members, the sealing member and the discharging preventing member may be integrated to have both a sealing function and a function of filling the space SP.
  • the whole discharge preventing member may be made of a fluid insulator.
  • the air cooling mechanism using the sirocco fan is applied to the apparatus of the second embodiment, but this air cooling mechanism can also be applied to the apparatus according to the first embodiment.
  • microwaves are used as electromagnetic waves.
  • present invention is not limited to this, and may be electromagnetic waves in other frequency bands.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　L'invention porte sur un dispositif de traitement par plasma dans lequel les propriétés d'un film formé par traitement par plasma peuvent être améliorées. Cette invention possède : une chambre de traitement (10) pour définir un espace scellé de manière étanche (11) ; une électrode de formation de plasma (36) disposée dans l'espace scellé de manière étanche ; un conducteur intérieur (21) s'étendant depuis l'extérieur de la chambre de traitement (10) vers l'électrode de formation de plasma (36) à travers une ouverture (13h) formée dans la chambre de traitement (10) ; des conducteurs extérieurs (22,13) entourant la périphérie du conducteur intérieur (21), et définissant l'ouverture (13h) et un vide (23) lié sur un côté par le conducteur intérieur (21) ; un élément d'étanchéité (60) pour diviser le vide (23) en un espace côté atmosphère et un espace communiquant avec l'espace scellé de manière étanche (11), l'élément d'étanchéité (60) étant formé à partir d'un isolant et étant connecté au conducteur intérieur (21) et aux conducteurs extérieurs (22,13) ; et un isolant anti-décharge (100) pour remplir une partie du vide (23) correspondant à l'espace formé sur le côté d'espace scellé de manière étanche (11) par rapport à l'élément d'étanchéité (60).
PCT/JP2013/003107 2013-05-15 2013-05-15 Dispositif de traitement par plasma et son procédé d'étanchéité WO2014184824A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013544605A JP5441083B1 (ja) 2013-05-15 2013-05-15 プラズマ処理装置およびそのシール方法
PCT/JP2013/003107 WO2014184824A1 (fr) 2013-05-15 2013-05-15 Dispositif de traitement par plasma et son procédé d'étanchéité
TW103117005A TW201506985A (zh) 2013-05-15 2014-05-14 電漿處理裝置及其密封方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2013/003107 WO2014184824A1 (fr) 2013-05-15 2013-05-15 Dispositif de traitement par plasma et son procédé d'étanchéité

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WO2014184824A1 true WO2014184824A1 (fr) 2014-11-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020189545A1 (fr) * 2019-03-15 2020-09-24 株式会社ノア リーディング Dispositif de traitement au plasma, procédé de traitement au plasma et élément conducteur

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263183A (ja) * 1994-03-22 1995-10-13 Nissin Electric Co Ltd プラズマ源
JP2001284238A (ja) * 2000-03-31 2001-10-12 Tadahiro Omi 電磁波伝送装置、電磁波共振装置、プラズマ処理装置、露光装置及びデバイス製造方法
JP2004319871A (ja) * 2003-04-18 2004-11-11 Advanced Lcd Technologies Development Center Co Ltd 処理装置、処理方法およびプラズマ処理装置
JP2007208084A (ja) * 2006-02-03 2007-08-16 Hitachi High-Technologies Corp プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263183A (ja) * 1994-03-22 1995-10-13 Nissin Electric Co Ltd プラズマ源
JP2001284238A (ja) * 2000-03-31 2001-10-12 Tadahiro Omi 電磁波伝送装置、電磁波共振装置、プラズマ処理装置、露光装置及びデバイス製造方法
JP2004319871A (ja) * 2003-04-18 2004-11-11 Advanced Lcd Technologies Development Center Co Ltd 処理装置、処理方法およびプラズマ処理装置
JP2007208084A (ja) * 2006-02-03 2007-08-16 Hitachi High-Technologies Corp プラズマ処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020189545A1 (fr) * 2019-03-15 2020-09-24 株式会社ノア リーディング Dispositif de traitement au plasma, procédé de traitement au plasma et élément conducteur
JPWO2020189545A1 (fr) * 2019-03-15 2020-09-24
JP7496961B2 (ja) 2019-03-15 2024-06-10 株式会社ノアリーディング プラズマ処理装置、プラズマ処理方法及び導通部材

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TW201506985A (zh) 2015-02-16

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