WO2014181658A1 - Procédé de fabrication de carte de circuits imprimés transparente - Google Patents

Procédé de fabrication de carte de circuits imprimés transparente Download PDF

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Publication number
WO2014181658A1
WO2014181658A1 PCT/JP2014/060955 JP2014060955W WO2014181658A1 WO 2014181658 A1 WO2014181658 A1 WO 2014181658A1 JP 2014060955 W JP2014060955 W JP 2014060955W WO 2014181658 A1 WO2014181658 A1 WO 2014181658A1
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WO
WIPO (PCT)
Prior art keywords
transparent
temporary fixing
fixing material
adhesion layer
circuit board
Prior art date
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PCT/JP2014/060955
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English (en)
Japanese (ja)
Inventor
宇圓田　大介
鈴木　彰
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日東電工株式会社
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Publication of WO2014181658A1 publication Critical patent/WO2014181658A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/04—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by at least one layer folded at the edge, e.g. over another layer ; characterised by at least one layer enveloping or enclosing a material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/05—Interconnection of layers the layers not being connected over the whole surface, e.g. discontinuous connection or patterned connection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/06—Interconnection of layers permitting easy separation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1046—Polyimides containing oxygen in the form of ether bonds in the main chain
    • C08G73/105—Polyimides containing oxygen in the form of ether bonds in the main chain with oxygen only in the diamino moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075—Partially aromatic polyimides
    • C08G73/1082—Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/412—Transparent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/748—Releasability
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/08—PCBs, i.e. printed circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0386—Paper sheets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0104—Properties and characteristics in general
    • H05K2201/0108—Transparent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/16—Inspection; Monitoring; Aligning
    • H05K2203/163—Monitoring a manufacturing process

Definitions

  • the present invention relates to a method for manufacturing a transparent circuit board.
  • Patent Document 1 discloses a method of manufacturing a glass substrate to cope with such circumstances.
  • a thin glass substrate is fixed to a support substrate as a reinforcing material with an adhesive interposed therebetween, and then a transparent electrode film is formed on the surface of the thin glass substrate.
  • a thin glass substrate, an adhesive as a temporary fixing material, and a support substrate are integrally formed to form a pattern, so that the adhesive is also affected by the heat treatment at that time.
  • this adhesive has heat resistance, it is not sufficient, and if the influence of heat treatment cannot be ignored, outgas derived from the adhesive is generated, and the glass substrate cannot be contaminated or a desired pattern cannot be formed.
  • the present invention solves the above-mentioned problems found in the production of a transparent circuit board. For example, a desired pattern processing can be performed while reducing the generation of outgas derived from a temporarily fixed material even when a high temperature treatment at 200 ° C. or higher is performed.
  • An object of the present invention is to provide a method for producing a transparent circuit board that can be carried out cleanly.
  • the present invention provides a laminate preparation step of preparing a laminate in which a transparent workpiece is temporarily fixed on a support via a temporary fixing material, Including a processing step of forming a pattern on the transparent workpiece by pattern processing including a heat treatment of 200 ° C. or higher to produce a transparent circuit board, and a peeling step of peeling the transparent circuit board from the temporary fixing material,
  • a processing step of forming a pattern on the transparent workpiece by pattern processing including a heat treatment of 200 ° C. or higher to produce a transparent circuit board and a peeling step of peeling the transparent circuit board from the temporary fixing material
  • the differential heat-thermogravimetric simultaneous measurement for the temporary fixing material was performed by raising the temperature to 400 ° C. at a temperature increase rate of 5 ° C./min, the weight loss rate of the temporary fixing material at 200 ° C. or less was less than 1%. It is a manufacturing method of a certain transparent circuit board.
  • the transparent workpiece is fixed using a highly heat-resistant temporary fixing material whose weight reduction rate at a high temperature of 200 ° C. or less is less than 1%, pattern processing including heat treatment at 200 ° C. or more is performed. Even if it carries out, generation
  • the measuring method of a weight decreasing rate is based on description of an Example.
  • the temporary fixing material includes a highly adhesive layer having an adhesive strength of 0.05 N / 20 mm or more and 10 N / 20 mm or less to a glass plate, and 0 N / 20 mm or more and 0.05 N / 20 mm to a glass plate. It is preferable to provide a low-adhesion layer having an adhesive strength of less than. With such a configuration, it is possible to efficiently achieve both retention during processing of a transparent workpiece and releasability after processing.
  • the outer periphery of the pattern processing region on the transparent workpiece is located inside the outer periphery of the low adhesion layer.
  • the low adhesive layer is assigned to the cut out transparent circuit board.
  • peeling from the support can be easily performed.
  • the number of pattern processing regions for one low adhesion layer may be one or more.
  • the outer periphery of the pattern processing region located at the outermost periphery may be positioned inside the outer periphery of the low adhesive layer.
  • the low-adhesion layer is disposed between the transparent workpiece and the support, and the high-adhesion layer connects the outer peripheral side of the transparent circuit board and the outer peripheral side of the support. It is preferable to arrange
  • the height of the highly adhesive layer is 50% or more and less than 100% of the height of the laminate in a side view of the laminate. preferable.
  • FIG. 2 is a sectional view taken along line XX in FIG.
  • FIG. 2 is a sectional view taken along line XX in FIG.
  • It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the transparent circuit board which concerns on one Embodiment of this invention.
  • It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the transparent circuit board which concerns on one Embodiment of this invention.
  • It is a cross-sectional schematic diagram for demonstrating the manufacturing method of the transparent circuit board which concerns on one Embodiment of this invention.
  • the method for producing a transparent circuit board of the present invention is a laminate preparation step for preparing a laminate in which a transparent workpiece is temporarily fixed on a support via a temporary fixing material, Including a processing step of forming a pattern on the transparent workpiece by pattern processing including a heat treatment of 200 ° C. or higher to produce a transparent circuit board, and a peeling step of peeling the transparent circuit board from the temporary fixing material,
  • a processing step of forming a pattern on the transparent workpiece by pattern processing including a heat treatment of 200 ° C. or higher to produce a transparent circuit board and a peeling step of peeling the transparent circuit board from the temporary fixing material
  • the differential heat-thermogravimetric simultaneous measurement for the temporary fixing material is performed at a temperature increase rate of 5 ° C./min up to 400 ° C.
  • the weight reduction rate of the temporary fixing material at 200 ° C. or less is less than 1%. It is.
  • laminate preparation process a laminate is prepared in which a transparent work is temporarily fixed on a support via a temporary fixing material. Below, after explaining each member, formation of a laminated body is demonstrated.
  • FIG. 1A is a partially transparent plan view of a temporary fixing member according to an embodiment of the present invention
  • FIG. 1B is a sectional view taken along line XX.
  • the temporary fixing material 11 has a peripheral portion 11P formed of a highly adhesive layer 11a, and a central portion 11C inside the peripheral portion 11P has a lower adhesive force than the high adhesive layer 11a. It is formed by lamination with the low adhesion layer 11b. That is, the temporary fixing material 11 has the low adhesion layer 11b and the high adhesion layer 11a laminated
  • the adhesive force of the low adhesive layer 11b is lower than the adhesive force of the high adhesive layer 11a.
  • the temporarily fixing material 11 is bonded to a support body by using the surface where the low adhesion layer 11b is exposed as a bonding surface (see FIG. 2A).
  • the high adhesive layer 11a having higher adhesive force than the low adhesive layer 11b exists in the peripheral portion, it can be firmly bonded to the support in this portion.
  • the support and the transparent circuit board can be easily separated vertically by an external force in the peeling process described later. It becomes possible to do.
  • positioned on the temporarily fixed material 11 can be fixed more firmly in the surface where only the high adhesion layer 11a is exposed.
  • the central portion 11C is formed by stacking the high adhesion layer 11a and the low adhesion layer 11b. Accordingly, the central portion 11C formed by stacking the high adhesion layer 11a and the low adhesion layer 11b has a relatively lower adhesive force than the peripheral edge portion 11P formed only by the high adhesion layer 11a. Thereby, it becomes possible to separate the support and the transparent circuit board up and down easily by applying an external force.
  • the temporary fixing material 11 is easily peeled off from the support after the peeling step. Therefore, it becomes easy to reuse the support.
  • the high adhesion layer 11a is formed in the peripheral part 11P in the temporary fixing material 11, in the peeling process mentioned later, the high adhesion layer 11a is melt
  • the weight reduction rate at 200 ° C. of the temporary fixing material 11 was less than 1%. Preferably, it is 0.8% or less, more preferably 0.6% or less.
  • the lower limit of the weight loss rate is preferably as low as possible, and 0% or more is preferable, but may be 0.01% or more.
  • the thickness of the temporary fixing material 11 is not particularly limited, and the lower limit thereof is, for example, 5 ⁇ m or more, preferably 10 ⁇ m or more. When the thickness is 5 ⁇ m or more, it is possible to follow irregularities on the surface of the support or the surface of the transparent workpiece, and the temporary fixing material can fill the space between the support and the transparent workpiece without any gap.
  • the upper limit of the thickness of the temporary fixing material 11 is 500 micrometers or less, for example, Preferably it is 200 micrometers or less. When the thickness is 500 ⁇ m or less, variation in thickness and shrinkage / expansion during heating can be suppressed.
  • the thickness of the high adhesion layer 11a in the central portion 11C can be set as appropriate, but the lower limit thereof is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more, and further preferably 1 ⁇ m or more. Further, the upper limit of the thickness is preferably 300 ⁇ m or less, and more preferably 200 ⁇ m or less. Moreover, the thickness of the low adhesion layer 11b in the center part 11C can be suitably set with the same thickness as the high adhesion layer 11a.
  • the temporarily fixed material 11 has a rectangular shape when viewed in plan.
  • the size of the temporarily fixed material 11 in plan view is not particularly limited, and may be set as appropriate according to the size of the transparent workpiece to be processed.
  • the length of one side of the temporary fixing material 11 is preferably +1.0 to ⁇ 1.0 mm with respect to the length of the corresponding side of the support.
  • the shape of the low adhesion layer 11b is rectangular.
  • the area of the low adhesion layer 11b when the temporary fixing material 11 is viewed in plan is preferably 10% or more, more preferably 20% or more with respect to the area of the temporary fixing material 11 when the temporary fixing material 11 is viewed in plan. More preferably, it is 50% or more. If it is 10% or more, it is easy to separate the transparent circuit board and the support.
  • work can be firmly fixed to a support body as it is 99.95% or less.
  • the adhesive strength of the high adhesion layer 11a is preferably, for example, a 90 ° peeling force with respect to a glass plate at a temperature of 23 ⁇ 2 ° C. and a peeling speed of 300 mm / min is 0.05 N / 20 mm or more. More preferably, it is 10 N / 20 mm or more. A support body and the temporary fixing material 11 can be fixed more firmly as it is 0.05 N / 20mm or more.
  • the upper limit of the 90 ° peeling force is not particularly limited and is preferably as large as possible. For example, it is 10 N / 20 mm or less, preferably 5 N / 20 mm or less.
  • an adhesive composition which comprises the high adhesion layer 11a The structure derived from the structural unit derived from the diamine which has an imide group and has an alkyl ether structure in part at least, or linear alkylenediamine
  • a polyimide resin or a polyamideimide resin having a unit can be preferably used.
  • a silicone resin can also be used suitably.
  • the said polyimide resin is preferable from the point of heat resistance, chemical resistance, and adhesive residue.
  • the polyimide resin can be generally obtained by imidizing (dehydrating and condensing) a polyamic acid that is a precursor thereof.
  • a method for imidizing the polyamic acid for example, a conventionally known heat imidization method, azeotropic dehydration method, chemical imidization method and the like can be employed. Of these, the heating imidization method is preferable.
  • the heat imidization method it is preferable to perform heat treatment under a nitrogen atmosphere or an inert atmosphere such as a vacuum in order to prevent deterioration of the polyimide resin due to oxidation.
  • the polyamic acid is an acid anhydride and a diamine (a diamine having an alkyl ether structure and a linear alkylene diamine (both are also referred to as “specific diamine”), and a diamine other than these (hereinafter, "Other diamines”) are also included in a substantially equimolar ratio and reacted.
  • the diamine having the alkyl ether structure is not particularly limited as long as it is a compound having an alkyl ether structure and having at least two terminals having an amine structure.
  • Examples thereof include a diamine having a methylene skeleton and an ether group bonded to the methylene skeleton.
  • Examples of the diamine having a methylene skeleton and an ether group bonded thereto include, for example, a diamine having a polypropylene glycol structure and one amino group at each end, a polyethylene glycol structure, and an amino group.
  • a diamine having an alkylene glycol such as a diamine having a polytetramethylene glycol structure at each end and a diamine having one amino group at each end.
  • a diamine having a combination of a plurality of these methylene skeletons and ether groups bonded to the methylene skeleton and one amino group at each end can be given.
  • the molecular weight of the diamine having an ether structure is preferably within the range of 100 to 5000, and more preferably 150 to 4800. When the molecular weight of the diamine having an ether structure is in the range of 100 to 5,000, it is easy to obtain a highly adhesive layer 11a having high adhesive strength and light release properties.
  • linear alkylene diamine examples include a diamine having a linear alkylene structure and one amino group at each end.
  • examples of the linear alkylene diamine include ethylene diamine, hexamethylene diamine, 1,8-diaminooctane, 1,10-diaminodecane, 1,12-diaminododecane, 1,14-diaminotetradecane, and 1,16-diaminohexadecane. 1,20-diaminoicosane and the like.
  • the molecular weight of the linear alkylene diamine is usually 50 to 1,000,000, preferably 100 to 30,000.
  • a diamine other than the specific diamine may be used in combination.
  • An aromatic diamine can be mentioned as another diamine.
  • the adhesion with the adherend can be controlled.
  • aromatic diamine examples include 4,4′-diaminodiphenyl ether, 3,4′-diaminodiphenyl ether, 3,3′-diaminodiphenyl ether, m-phenylenediamine, p-phenylenediamine, and 4,4′-diaminodiphenylpropane.
  • the molecular weight of the aromatic diamine is usually 50 to 1000, preferably 100 to 500.
  • the molecular weight of diamine refers to a value (weight average molecular weight) measured by GPC (gel permeation chromatography) and calculated in terms of polystyrene.
  • the blending ratio of both is preferably in the range of 50:50 to 20:80, more preferably 20:80 to 50 : 50, and more preferably 25:75 to 45:55.
  • the blending ratio of the specific diamine and the other diamine is within the above range, it is excellent in peelability as well as heat resistance.
  • the blending ratio of both is preferably in the range of 100: 0 to 20:80, more preferably 95: 5 to 40 : 60, and more preferably 90:10 to 50:50.
  • the blending ratio of the specific diamine and the other diamine is within the above range, it is excellent in peelability as well as heat resistance.
  • Examples of the acid anhydride include 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride, 2,2 ′, 3,3′-biphenyltetracarboxylic dianhydride, 3,3 ′, 4,4′-benzophenone tetracarboxylic dianhydride, 2,2 ′, 3,3′-benzophenone tetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride, 2,2-bis (2, 3-Dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA), bis (2,3-dicarboxyphenyl) methane dianhydride Bis (3,4-dicarboxyphenyl) methane dianhydride, bis (2,3-dicarboxyphenyl) sulfone dianhydride, bis
  • Examples of the solvent for reacting the acid anhydride with the diamine include N, N-dimethylacetamide, N-methyl-2-pyrrolidone, N, N-dimethylformamide, and cyclopentanone. These may be used alone or in combination. Further, in order to adjust the solubility of raw materials and resins, a nonpolar solvent such as toluene or xylene may be appropriately mixed and used.
  • silicone resin examples include peroxide cross-linked silicone pressure sensitive adhesive, addition reaction type silicone pressure sensitive adhesive, dehydrogenation reaction type silicone pressure sensitive adhesive, and moisture curable type silicone pressure sensitive adhesive.
  • the said silicone resin may be used individually by 1 type, and may use 2 or more types together. When the silicone resin is used, the heat resistance becomes high, and the storage elastic modulus and adhesive strength at high temperatures can be appropriate values.
  • addition reaction type silicone pressure-sensitive adhesives are preferable in terms of few impurities.
  • the adhesive composition constituting the highly adhesive layer 11a may contain other additives.
  • other additives include flame retardants, silane coupling agents, and ion trapping agents.
  • flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin.
  • silane coupling agent include ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, and the like.
  • the ion trapping agent include hydrotalcites and bismuth hydroxide. Such other additives may be only one kind or two or more kinds.
  • Low adhesion layer Although it does not specifically limit as an adhesive composition which comprises the low adhesion layer 11b,
  • the polyimide resin which has an imide group and has a structural unit derived from the said other diamine in at least one part can be used conveniently. By using only the other diamine without using the specific diamine, the adhesive force can be suitably reduced.
  • the composition and formation method of the low-adhesion layer 11b employ the same composition and formation method as the high-adhesion layer except that the specific diamine in the term of the high-adhesion layer is not used as the diamine, but only other diamines are used. be able to.
  • fluorine-containing aromatic diamines such as 2,2'-bis (trifluoromethyl) benzidine and 1,1'-bis (trifluoromethyl) benzidine can also be suitably used as the other diamine.
  • the low-adhesion layer 11b is not particularly limited as long as it has a lower adhesive force than that of the high-adhesion layer 11a and has heat resistance in addition to the layer formed using the resin as described above.
  • Examples of such layers include thin films of inorganic materials such as metals such as aluminum and ceramics, and thin films of other heat-resistant organic materials such as other polyimides and polyether ether ketones.
  • Examples of the method for forming a thin film of an inorganic material include a vapor deposition method, a sputtering method, a chemical vapor deposition method, and a sol-gel method.
  • the adhesive strength of the low adhesive layer 11b is lower than the adhesive strength of the high adhesive layer 11a.
  • the adhesive strength of the low adhesive layer 11b is, for example, preferably a 90 ° peeling force with respect to a glass plate under a temperature of 23 ⁇ 2 ° C. and a peeling speed of 300 mm / min is less than 0.05 N / 20 mm, and 0.01 N / 20 mm or less is more preferable.
  • the thickness is less than 0.05 N / 20 mm, the low adhesion layer 11 b can be easily peeled off.
  • the lower limit of the 90 ° peeling force is preferably as low as possible, but is preferably 0 N / 20 mm or more, more preferably 0.001 N / 20 mm or more, and further preferably 0.0015 N / 20 mm or more.
  • the temporary fixing material preferably has a weight reduction rate of less than 1% by weight and less than 0.9% by weight after being immersed in a 3% tetramethylammonium hydroxide (TMAH) aqueous solution at room temperature for 5 minutes. Is more preferable, and it is still more preferable that it is less than 0.8 weight%. Further, the weight reduction rate is preferably as small as possible. Accordingly, the lower limit of the weight reduction rate is preferably 0% by weight or more, but may be 0.001% by weight or more. When the weight reduction rate after being immersed in the TMAH aqueous solution is within the above range, the solvent resistance (particularly the solvent resistance to the TMAH aqueous solution) can be improved.
  • the weight reduction rate of the temporary fixing material can be controlled by, for example, the composition of the diamine used (solubility of the diamine in the TMAH aqueous solution). The method for measuring the weight loss rate is as described in the examples.
  • the temporary fixing material preferably has a weight reduction rate of less than 1% by weight after being immersed in a 10% sulfuric acid aqueous solution at room temperature for 5 minutes, more preferably less than 0.9% by weight, More preferably, it is less than% by weight. Further, the weight reduction rate is preferably as small as possible. Accordingly, the lower limit of the weight reduction rate is preferably 0% by weight or more, but may be 0.001% by weight or more. Acid resistance (especially acid resistance with respect to sulfuric acid aqueous solution) can be improved as the weight decreasing rate after being immersed in sulfuric acid aqueous solution is the said range.
  • the weight reduction rate of the temporary fixing material can be controlled by, for example, the composition of the diamine used (solubility of the diamine in an aqueous sulfuric acid solution). The method for measuring the weight loss rate is as described in the examples.
  • the temporary fixing material preferably has a weight reduction rate of less than 1% by weight after being immersed in a 10% aqueous sodium hydroxide solution at room temperature for 5 minutes, more preferably less than 0.9% by weight, More preferably, it is less than 8% by weight. Further, the weight reduction rate is preferably as small as possible. Accordingly, the lower limit of the weight reduction rate is preferably 0% by weight or more, but may be 0.001% by weight or more. Alkali resistance (especially alkali resistance with respect to sodium hydroxide aqueous solution) can be improved as the weight reduction
  • the weight reduction rate of the temporary fixing material can be controlled by, for example, the composition of the diamine used (solubility of the diamine in an aqueous sodium hydroxide solution). The method for measuring the weight loss rate is as described in the examples.
  • the temporary fixing material preferably has a weight reduction rate of less than 1% by weight after being immersed in 100 mL of N-methylpyrrolidone (NMP) at room temperature for 5 minutes, more preferably less than 0.9% by weight. More preferably, it is less than 0.8% by weight. Further, the weight reduction rate is preferably as small as possible. Accordingly, the lower limit of the weight reduction rate is preferably 0% by weight or more, but may be 0.001% by weight or more. When the weight reduction rate after being immersed in NMP is in the above range, solvent resistance (particularly, solvent resistance to NMP) can be improved.
  • the weight reduction rate of the temporary fixing material can be controlled by, for example, the composition of the diamine used (solubility of diamine in NMP). The method of measuring the weight loss rate can be performed according to other measurement procedures for chemical resistance evaluation.
  • the manufacturing method of the temporary fixing material 11 is not specifically limited.
  • a solution containing a composition for forming the low-adhesion layer 11b is applied on a separator and dried to form an application layer, and further a composition for forming the high-adhesion layer 11a. It can manufacture by apply
  • a protective separator may be bonded onto the highly adhesive layer 11a. In this method, the coating layer formed around the low adhesion layer 11b becomes the high adhesion layer 11a of the peripheral edge portion 11P.
  • a procedure in which the high-adhesion layer 11a and the low-adhesion layer 11b are formed on separate separators and the two are finally bonded can be employed.
  • the high-adhesion layer 11a as the peripheral edge portion 11P can be formed around the low-adhesion layer 11b by keeping the size of the high-adhesion layer 11a in plan view larger than that of the low-adhesion layer 11b.
  • a procedure can be employed in which the low-adhesion layer 11b formed on the separator is bonded to the support 12, and the high-adhesion layer 11a separately formed on the separator is bonded thereto. .
  • the high-adhesion layer 11a as the peripheral edge portion 11P can be formed around the low-adhesion layer 11b by setting the size of the high-adhesion layer 11a in plan view larger than that of the low-adhesion layer 11b. it can.
  • the low-adhesion layer 11b is formed on the support 12 by vapor deposition or bonding
  • a low adhesion layer 11b made of an inorganic thin film or the like is deposited or laminated on the high adhesion layer 11a. It is possible to adopt a procedure of forming and bonding this to the support 12 with the surface where the low adhesion layer 11b is exposed as the bonding surface. What is necessary is just to set suitably the viscosity and application quantity of the solution to apply
  • the transparent workpiece 13 (see FIG. 2A) is not particularly limited as long as it is a material having transparency and heat resistance.
  • polyester such as polyethylene terephthalate and polyethylene naphthalate, polycarbonate, polyimide, polyetherimide, polyamide, polyamide Imido, wholly aromatic polyamide, polyphenylsulfide, aramid (paper), glass, glass cloth, fluororesin, silicone resin, metal (foil), paper, FRP, ultrathin glass, physically tempered glass, chemically tempered glass, etc.
  • work does not have flexibility substantially.
  • “Not substantially flexible” means that the material is broken at a bending elastic modulus of 500 MPa or more according to a three-point bending test according to JIS R 1601.
  • the thickness of the transparent workpiece 13 may be set according to the design of the device in which the processed transparent circuit board is incorporated, the upper limit of the thickness is preferably 5 mm or less, and more preferably 1 mm or less. Moreover, the minimum of the thickness of a transparent workpiece
  • the support body 12 It does not specifically limit as the support body 12 (refer FIG. 2A), A SUS board, a glass plate, a plastic plate etc. are mentioned preferably.
  • the plastic plate material include low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, and polymethylpentene.
  • Polyolefin such as ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, Ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic Polyamide, polyphenyl sulphates id, aramid (paper), can be glass, glass cloth, fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, also possible to use paper or the like.
  • Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyether
  • the support 12 may be used alone or in combination of two or more.
  • the thickness of the support is not particularly limited, but is usually about 10 ⁇ m to 20 mm.
  • FIG. 1A and 1B are schematic cross-sectional views for explaining a method for manufacturing a transparent circuit board according to an embodiment of the present invention.
  • the temporary fixing material 11 is manufactured by the first or second method, the separator is peeled from the manufactured temporary fixing material 11, and the lower surface of the temporary fixing material 11 is bonded to the support 12 as a bonding surface (see FIG. 2A).
  • the bonding method is not particularly limited, but a method by pressure bonding is preferable.
  • the crimping is usually performed while pressing with a pressing means such as a crimping roll.
  • the conditions for pressure bonding are preferably 20 ° C.
  • the temporary fixing material 11 can be firmly bonded to the support 1 because the high-adhesion layer 11a having higher adhesive strength than the low-adhesion layer 11b is exposed on the lower surface.
  • the temporary fixing material 11 is manufactured in a state where the temporary fixing material 11 is bonded to the support 12 and can be used as it is in the next step.
  • the laminated body 10 can be formed by bonding the transparent workpiece 13 on the temporary fixing material 11.
  • the bonding method is not particularly limited, but pressure bonding is preferable.
  • the pressing is usually performed by pressing means such as a pressing roll or a press.
  • the press method is desirable from the viewpoint of unevenness followability, the total thickness of the adherend, and the support.
  • the pressure bonding conditions are as follows: temperature: 40 ° C. to 200 ° C., pressure: 0.1 kg / cm 2 to 100 kg / cm 2 , reduced pressure atmosphere: 1 to 100 torr (1.33 ⁇ 10 2 Pa to 1.33 ⁇ 10 4 Pa ), Preferably 60 to 600 s.
  • a transparent circuit board 15 is manufactured by forming a pattern 14 on the transparent workpiece 13 by pattern processing including heat treatment at 200 ° C. or higher.
  • the processing for the transparent workpiece 13 is not particularly limited, and a conventionally known process can be adopted depending on the device design to which the processed transparent circuit board 15 is applied, and a typical example is pattern formation.
  • the pattern 14 may be a transparent work, a flexible circuit board (FPC), a base substrate of an organic EL panel, a display driving circuit using an electronic paper, an LCD, or an organic EL display unit, a color filter,
  • the transparent circuit board is a member on which a circuit board such as a TFT (drive circuit) or a color filter is formed
  • the circuit board can be manufactured through a known photolithography process.
  • a typical photolithography process procedures such as formation of an organic or inorganic thin film, application of a resist composition, baking of a resist coating, exposure, etching of the resist coating, etching of the thin film, removal of the resist film are repeated.
  • a desired pattern circuit can be formed.
  • the temporary fixing material 11 has a chemical resistance and a thin film when forming a resist film and a plated wiring. Heat resistance at the time of formation, baking and drying, and vacuum resistance at the time of forming a thin film (wiring) by sputtering or the like are required. Conventionally, outgassing is generated from the temporary fixing material 11 by the heat treatment or vacuum processing as described above, and bubbles are generated at the interface between the temporary fixing material 11 and the transparent workpiece 13 or at the interface between the temporary fixing material 11 and the support 13.
  • a thin film formation failure occurs due to outgassing, or the temporary fixing material 11 is denatured or deformed by the chemical treatment as described above, so that a desired pattern cannot be formed.
  • the temporary fixing material 11 having heat resistance, chemical resistance, and vacuum resistance is used, a desired pattern can be formed.
  • the transparent circuit board can be a transparent circuit board such as a single-sided circuit, a double-sided circuit, or a multi-layered circuit. Not only the circuit can be formed, but also an element or the like can be mounted. In order to form circuits on both sides of the transparent workpiece, it is possible to employ means for forming a circuit on one side after forming the circuit on one side and fixing the circuit forming surface to a support via a temporary fixing material.
  • the material is not particularly limited, and a low molecular organic semiconductor material, a high molecular organic semiconductor material, or an organic / inorganic hybrid semiconductor material can be used.
  • a low molecular organic semiconductor material a high molecular organic semiconductor material, or an organic / inorganic hybrid semiconductor material can be used.
  • the insulating material an organic polymer material or an inorganic material can be used.
  • the electrode and the wiring can be formed by drawing directly on the film.
  • a metal nano paste or ink containing metal nanoparticles such as silver, or a paste or ink containing metal oxide nanoparticles can be employed.
  • a conductive polymer solution or the like may be employed.
  • an inkjet method, a screen printing method, a gravure printing, a flexographic printing, and a nanoprinting technique can be employed.
  • a TFT circuit or the like may be formed on the film by transfer.
  • the outer periphery of the pattern processing region on the transparent workpiece 13 (the outermost periphery of the pattern 14) is inside the outer periphery of the low adhesion layer 11b. It is preferable to be located at. Thereby, even when the outer peripheral part of the pattern processing area of the transparent circuit board is cut out or when the transparent circuit board is separated into pieces for each pattern processing area, the low adhesion layer 11b is assigned to the cut out transparent circuit board. Thus, peeling from the support 12 can be easily performed.
  • the transparent circuit board 15 is peeled from the temporary fixing material 11. Specifically, first, as shown in FIGS. 2C and 2D, the support 12 and the temporary fixing material 11 are peeled off using the surface on the support 12 side of the temporary fixing material 11 as an interface. As described above, since the temporary fixing material 11 includes not only the high adhesion layer 11a but also the low adhesion layer 11b having a lower adhesion than the high adhesion layer 11a, the support and the transparent circuit board can be easily attached by an external force. It becomes possible to separate it up and down.
  • the central portion 11C of the temporary fixing material 11 is formed by stacking the high adhesion layer 11a and the low adhesion layer 11b. Accordingly, the central portion 11C formed by stacking the high adhesion layer 11a and the low adhesion layer 11b has a relatively lower adhesive force than the peripheral edge portion 11P formed only by the high adhesion layer 11a. Thereby, it becomes possible to separate the support and the transparent circuit board up and down easily by applying an external force. Moreover, since the high adhesion layer 11a is formed in the peripheral part 11P in the temporary fixing material 11, it is possible to dissolve the high adhesion layer 11a with a solvent, or to make a physical cut by a cutter, a laser, or the like.
  • the adhesive force of the peripheral edge part 11P with respect to the part 11C can be cut off, and the temporary fixing material 11 can be peeled off from the support body 12 more easily.
  • a method for blocking or reducing the adhesive strength of the high adhesive layer 11a a method of dissolving the high adhesive layer 11a with a solvent to block the adhesive strength, and physically cutting the high adhesive layer 11a with a cutter or a laser. Examples thereof include a method of blocking the adhesive force, a method of forming the highly adhesive layer 11a with a material whose adhesive force is reduced by heating, and a method of reducing the adhesive force by heating.
  • a physical cut is made at a position slightly inside the outer periphery of the central portion 11C.
  • the adhesive force of the peripheral part 11P with respect to the center part 11C is interrupted, and since only the low adhesive layer 11b has an adhesive force with respect to the support in the center part 11C, the center part 11C is peeled from the support body 12. Can be made easier.
  • the transparent circuit board 15 can be recovered by peeling the transparent circuit board 15 together with the temporary fixing material 11 from the support 12. Since the transparent circuit board 15 including the pattern processing region on which the pattern 14 is formed is located above the low adhesion layer 11b, the transparent circuit board 15 can be easily peeled off from the support 12.
  • 2A to 2D show an embodiment in which one transparent circuit board 15 is formed on the temporary fixing material 11, but the present invention is not limited to this.
  • a plurality of transparent workpieces are bonded on the temporary fixing material 11, respectively.
  • the transparent workpiece is patterned to produce a plurality of transparent circuit boards, and then the adhesive force of the high-adhesion layer 11a as described above is cut off to collect individual transparent circuit boards. Can do.
  • a plurality of pattern processing regions are formed on one transparent workpiece, and a plurality of transparent circuit boards are manufactured by performing dicing or the like for each pattern processing region, and then the adhesive strength of the high adhesive layer 11a as described above. It is possible to adopt a procedure in which the individual transparent circuit boards are collected by shutting off.
  • the temporary fixing material 11 can be removed from the transparent circuit board 15 by peeling without any special treatment.
  • FIG. 3 is a schematic cross-sectional view showing a temporary fixing material according to a second embodiment of the present invention.
  • the temporary fixing material 21 has a peripheral portion 21P formed of a high adhesive layer 21a and a central portion 21C inside the peripheral portion 21P formed of a low adhesive layer 21b.
  • the adhesive force of the low adhesive layer 21b is lower than the adhesive force of the high adhesive layer 21a.
  • the support and the transparent circuit board can be easily separated vertically by an external force in the peeling process.
  • the temporary fixing material 21 Since the central portion 21C of the temporary fixing material 21 is formed by the low adhesive layer 21b and the low adhesive layer 21b is also in contact with the support, the temporary fixing material 21 is easily peeled from the support during the peeling process. Become. Therefore, it becomes easy to reuse the support. Moreover, since the high adhesion layer 21a is formed in the peripheral part 21P in the temporary fixing material 21, in the peeling process, the high adhesion layer 21a is dissolved with a solvent, or it is physically cut with a cutter, a laser, or the like. Thus, the adhesive force of the high-adhesion layer 21a with respect to the central portion 21C can be cut off, and the temporary fixing material 21 can be more easily separated from the support.
  • composition of the temporary fixing material 21 can be the same as in the first embodiment.
  • FIG. 4 is a schematic cross-sectional view showing a temporary fixing material according to a third embodiment of the present invention.
  • the temporary fixing material 31 is formed by stacking a high adhesion layer 31a and a low adhesion layer 31b.
  • the adhesive force of the low adhesive layer 31b is lower than the adhesive force of the high adhesive layer 31a.
  • the transparent circuit board can be fixed to the support in a processing step or the like. Moreover, since it has not only the high adhesion layer 31a but the low adhesion layer 31b whose adhesive force is lower than that of the high adhesion layer 31a, the support and the transparent circuit board can be easily separated vertically by an external force in the peeling process. Is possible.
  • the thickness of the high adhesion layer 31a is not particularly limited, and is, for example, 10 ⁇ m or more, preferably 20 ⁇ m or more. When the thickness is 10 ⁇ m or more, the unevenness on the surface of the transparent workpiece can be followed, and the temporarily fixing material 31 can be filled between the transparent workpiece and the support without gaps. Moreover, the thickness of the high adhesion layer 31a is 100 micrometers or less, for example, Preferably it is 50 micrometers or less. When the thickness is 100 ⁇ m or less, variation in thickness and shrinkage / expansion during heating can be suppressed or prevented.
  • the thickness of the low adhesion layer 31b is not particularly limited and is, for example, 1 ⁇ m or more, preferably 5 ⁇ m or more. When the thickness is 1 ⁇ m or more, the unevenness on the surface of the support can be followed, and the temporarily fixing material 31 can be filled between the transparent workpiece and the support without any gap. Moreover, the thickness of the low adhesion layer 31b is 50 micrometers or less, for example, Preferably it is 20 micrometers or less. When the thickness is 50 ⁇ m or less, variation in thickness and shrinkage / expansion during heating can be suppressed or prevented.
  • the adhesive strength of the low adhesive layer 31b is, for example, preferably a 90 ° peel strength with respect to a glass plate under a temperature of 23 ⁇ 2 ° C. and a peel speed of 300 mm / min is less than 0.05 N / 20 mm. / 20 mm or less is more preferable. If it is less than 0.05 N / 20 mm, the transparent circuit board can be easily separated from the support.
  • the lower limit of the 90 ° peeling force is preferably 0.01 N / 20 mm or more, more preferably 0.02 N / 20 mm or more, and further preferably 0.03 N / 20 mm or more.
  • work can be favorably fixed to a support body as it is 0.01 N / 20mm or more, and pattern processing can be performed favorably.
  • composition of the temporary fixing material 31 can be the same as in the first embodiment.
  • FIG. 5 is a schematic cross-sectional view showing a temporary fixing material according to a fourth embodiment of the present invention.
  • the low adhesion layer 41 b is disposed between the transparent workpiece 43 and the support 42, and the high adhesion layer 41 a is formed on the outer peripheral side surface of the transparent workpiece 43 and the outer periphery of the support 42. It arrange
  • the transparent workpiece 43 can be processed in a clean state. Further, since the transparent work 43 can be peeled off from the support 42 only by peeling off or cutting off the portion of the highly adhesive layer 41a located on the outer periphery, the production efficiency can be improved.
  • the height h of the highly adhesive layer 41a is 50% or more and less than 100% of the height H of the laminate in the side view of the laminate 40. It is preferable that it is 60% or more and less than 90%.
  • the transparent workpiece 43 can be firmly fixed to the support 42, and the highly adhesive layer 41a can be prevented from wrapping around the processed surface of the transparent workpiece 43, so that the transparent workpiece 43 can be processed cleanly.
  • the thickness of the highly adhesive layer 41a (the amount of protrusion from the outer peripheral side surface of the laminate 40) is not particularly limited, the upper limit is preferably 500 ⁇ m or less, and more preferably 200 ⁇ m or less. Accordingly, it is possible to prevent the high adhesion layer 41a from entering the pattern processing region or the adhesion to the support 42 when it is desired not to adhere to the support 42. Further, the lower limit of the thickness is preferably 5 ⁇ m or more, and more preferably 10 ⁇ m or more. Thereby, fixation to the support body 42 of the transparent workpiece
  • the method of forming the laminate 40 including the temporary fixing material 41 includes, for example, attaching the low adhesive layer 41b formed on the separator to the support 42, and attaching the transparent workpiece 43 on the low adhesive layer 41b. After that, the high adhesive layer 41a extends over the outer peripheral side surface of the low adhesive laminate (that is, a part of the outer peripheral side surface of the transparent workpiece 43, the outer peripheral side surface of the low adhesive layer 41b, and a part of the outer peripheral side surface of the support 42).
  • the procedure of forming can be employed.
  • a procedure of applying a composition solution for forming the high-adhesion layer 41a to the outer peripheral side surface can be employed.
  • composition of the temporary fixing material 41 can be the same as in the first embodiment.
  • the shape of the high-adhesion layer and the low-adhesion layer when viewed from the top of the temporary fixing material is not limited to a rectangle, and may be another shape such as a circle, a polygon, or an ellipse independently.
  • the manufacturing method of the transparent circuit board in this invention is not limited to the example mentioned above, In the range of the summary of this invention, it can change suitably. It is.
  • PMDA pyromellitic dianhydride (molecular weight: 218.1)
  • Erasmer 1000 a diamine having an alkyl ether structure manufactured by Ihara Chemical Industry Co., Ltd. (molecular weight: 1229.7)
  • Dymer 1075 linear alkylenediamine (Molecular weight: 537.0) manufactured by Croda Japan TFMB: 2,2′-bis (trifluoromethyl) benzidine (molecular weight: 320.2)
  • DDE 4,4′-diaminodiphenyl ether (molecular weight: 200.2)
  • NMP N-methyl-2-pyrrolidone
  • DMAc N, N-dimethylacetamide
  • Commercial polyimide sheet Polyimide film “Kapton (registered trademark) 20EN” manufactured by Toray DuPont
  • Example 1 In an atmosphere under a nitrogen stream, 30.95 g of NMP was mixed with 33.95 g of elastomer 1000, 17.42 g of DDE, and 25 g of PMDA, respectively, and reacted at 80 ° C. to obtain a polyamic acid for a highly adhesive layer.
  • Solution A1 was obtained.
  • polyamic acid solution A2 was obtained by the method similar to polyamic acid solution A1. The obtained polyamic acid solution A1 was cooled to 23 ° C., applied to a separator, and dried at 90 ° C. for 3 minutes to obtain a 10 ⁇ m thick polyamic acid sheet A1 (precursor of a highly adhesive layer). Similarly, a polyamic acid sheet A2 (precursor of a low adhesion layer) having a thickness of 5 ⁇ m was obtained from the polyamic acid solution A2.
  • a polyamic acid sheet A2 having a size of 120 mm ⁇ 120 mm was bonded to a polyamic acid sheet A1 having a size of 200 mm ⁇ 200 mm at 90 ° C. so that their centers of gravity substantially coincided to obtain a polyamic acid sheet A.
  • the obtained polyamic acid sheet A is imidized under conditions of 350 ° C. ⁇ 1.5 hr under a vacuum atmosphere of 10 Pa or less, and is a laminate of a polyimide sheet A1 which is a high adhesion layer and a polyimide sheet A2 which is a low adhesion layer.
  • a temporary fixing material A was obtained.
  • the obtained temporary fixing material A is bonded to a glass plate having a length of 150 mm ⁇ width 150 mm ⁇ thickness 1 mm at 90 ° C. so that the polyimide sheet A2 is in the center, and is temporarily fixed along the outer periphery of the glass plate.
  • the material A was cut out to obtain a temporary fixing material A with a glass plate.
  • Example 2 A temporary fixing material B and a temporary fixing material B with a glass plate were obtained in the same manner as in Example 1 except that the composition and thickness of each layer of the high adhesion layer and the low adhesion layer were in accordance with Table 1.
  • Example 3 According to the composition shown in Table 1, a polyamic acid sheet C1 having a thickness of 10 ⁇ m, which is a precursor of the high adhesion layer, was obtained in the same procedure as in Example 1.
  • an aluminum vapor deposition film C2 (deposition apparatus: “UPC-410” manufactured by ULVAC, conditions: 70A, 10 s) of 120 mm ⁇ 120 mm ⁇ thickness 50 nm is formed on a glass plate having a length of 150 mm ⁇ width 150 mm ⁇ thickness 1 mm. A low adhesion layer was obtained.
  • a polyamic acid sheet C1 having a size of 200 mm ⁇ 200 mm was bonded at 90 ° C. so that the centers of gravity of each other substantially coincided with each other.
  • the bonded polyamic acid sheet C1 is imidized in a vacuum atmosphere of 10 Pa or less under the condition of 350 ° C. ⁇ 1.5 hr to obtain a temporary fixing material C that is a laminate of the polyimide sheet C1 and the aluminum vapor deposition film C2. It was.
  • the temporary fixing material C was cut along the outer periphery of the glass plate to obtain a temporary fixing material C with a glass plate.
  • Example 4 According to the composition in Table 1, a polyamic acid sheet D1 having a thickness of 20 ⁇ m, which is a precursor of the high adhesion layer, was obtained in the same procedure as in Example 1.
  • the obtained polyamic acid sheet D is imidized under conditions of 350 ° C.
  • the obtained temporary fixing material D is bonded to a glass plate having a length of 150 mm, a width of 150 mm, and a thickness of 1 mm at 150 ° C. so that the portion of the commercially available polyimide sheet D2 comes to the center, and temporarily attached along the outer periphery of the glass plate.
  • the fixing material D was cut out to obtain a temporary fixing material D with a glass plate.
  • Example 1 Comparative Example 1 According to the composition shown in Table 1, a 20 ⁇ m thick polyamic acid sheet E1 was obtained in the same procedure as in Example 1. The obtained polyamic acid sheet E1 was imidized under a vacuum atmosphere of 10 Pa or less under the conditions of 350 ° C. ⁇ 1.5 hr to obtain a temporary fixing material E composed of a single layer of the polyimide sheet E1.
  • the obtained temporary fixing material E was bonded to a glass plate having a length of 150 mm, a width of 150 mm, and a thickness of 1 mm at 90 ° C., and the temporary fixing material E was cut along the outer periphery of the glass plate.
  • Each of the high-adhesion layers A1 to E1 with glass plate and the low-adhesion layers A2 to D2 with glass plate is processed into a width of 20 mm and a length of 100 mm, and the temperature is measured using a tensile tester (manufactured by Shimadzu Corp., Autograph AGS-H). The 90 ° peel strength was evaluated at 23 ° C. and 300 mm / min. The results are shown in Table 2.
  • each sample was immersed in 100 ml of 10% sulfuric acid aqueous solution (room temperature) for 5 minutes to evaluate acid resistance, and each sample was immersed in 100 ml of 3% tetramethylammonium hydroxide (room temperature) for 5 minutes to evaluate solvent resistance. did.
  • the case where the weight reduction rate was less than 1% was evaluated as “ ⁇ ”, and the case where the weight reduction rate was 1% or more was evaluated as “X”.
  • the results are shown in Table 2.
  • Tempered glass of 100 mm ⁇ 60 mm (“Gorilla Glass” manufactured by Corning) was attached to temporary fixing materials A to E with glass plates under the conditions of 120 ° C., 4.5 kN, 3000 Pa, 60 seconds. Then, a vacuum high-temperature treatment that is exposed to an atmosphere of 300 ° C. and 5 Pa for 3 hours is applied, and “ ⁇ ” indicates that peeling of the tempered glass or peeling of the temporarily fixed material from the glass plate is not confirmed. “ ⁇ ” was evaluated. The results are shown in Table 2.
  • the temporary fixing materials of the examples had good results in retention during tempered glass processing, peelability after processing, chemical resistance, and heat resistance (outgas suppression). Although the temporary fixing material of the comparative example was good in chemical resistance, it was found that the tempered glass could not be held and the tempered glass could not be processed.

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  • Laminated Bodies (AREA)

Abstract

La présente invention concerne un procédé de fabrication de carte de circuits imprimés transparente qui permet de réaliser proprement un motif souhaité tout en réduisant les émissions de gaz dues à un matériau de fixation temporaire, même si un traitement à haute température, par exemple à une température de 200°C ou plus, est effectué. La présente invention concerne un procédé de fabrication de carte de circuits imprimés transparente qui comprend les étapes suivantes : une étape de préparation de stratifié au cours de laquelle est préparé un stratifié comprenant une pièce transparente fixée temporairement à un support, un matériau de fixation temporaire étant intercalé entre eux; une étape de réalisation de motif au cours de laquelle la réalisation d'un motif qui comprend un traitement thermique à une température de 200°C ou plus, est utilisée pour former un motif sur la pièce transparente, pour produire une carte de circuits imprimés transparente; et une étape de séparation au cours de laquelle la carte de circuits imprimés transparente est séparée du matériau de fixation temporaire. Si le matériau de fixation temporaire est soumis à des mesures simultanées de différence de température et de thermogravimétrie avec une élévation de la température jusqu'à 400°C à une vitesse de 5°C/min, ledit matériau de fixation temporaire présente un pourcentage de réduction de poids inférieur à 1 % à des températures inférieures ou égales à 200°C.
PCT/JP2014/060955 2013-05-08 2014-04-17 Procédé de fabrication de carte de circuits imprimés transparente WO2014181658A1 (fr)

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JP2013098091A JP2014218394A (ja) 2013-05-08 2013-05-08 透明回路基板の製造方法

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TWI601104B (zh) 2015-04-02 2017-10-01 元太科技工業股份有限公司 顯示面板
CN111133073B (zh) * 2017-09-27 2022-06-03 日产化学株式会社 临时粘接层形成用组合物和临时粘接层

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JP2010161167A (ja) * 2009-01-07 2010-07-22 Three M Innovative Properties Co 粘着テープ及び該粘着テープを含む積層体の作製方法
JP2010287819A (ja) * 2009-06-15 2010-12-24 Furukawa Electric Co Ltd:The 半導体ウエハ加工用粘着テープおよびその製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018111790A (ja) * 2017-01-12 2018-07-19 ナニワ化工株式会社 電子部品の仮止め用シート状基板

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