WO2014181372A1 - Procede d'assemblage - Google Patents

Procede d'assemblage Download PDF

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Publication number
WO2014181372A1
WO2014181372A1 PCT/JP2013/002963 JP2013002963W WO2014181372A1 WO 2014181372 A1 WO2014181372 A1 WO 2014181372A1 JP 2013002963 W JP2013002963 W JP 2013002963W WO 2014181372 A1 WO2014181372 A1 WO 2014181372A1
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WO
WIPO (PCT)
Prior art keywords
bonding
plasma treatment
gas
plasma
metal
Prior art date
Application number
PCT/JP2013/002963
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English (en)
Japanese (ja)
Inventor
克昭 菅沼
至成 長尾
徹 菅原
創一 坂元
隆史 藤立
一哉 小谷
Original Assignee
国立大学法人大阪大学
株式会社ニッシン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 国立大学法人大阪大学, 株式会社ニッシン filed Critical 国立大学法人大阪大学
Priority to PCT/JP2013/002963 priority Critical patent/WO2014181372A1/fr
Priority to JP2015515653A priority patent/JP6087425B2/ja
Publication of WO2014181372A1 publication Critical patent/WO2014181372A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06—Metallic powder characterised by the shape of the particles
    • B22F1/068—Flake-like particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2202/00—Treatment under specific physical conditions
    • B22F2202/13—Use of plasma

Definitions

  • the present invention relates to a joining method for joining a workpiece, and more particularly to a technique for joining a metal or metal oxide fine particles by sintering.
  • Solder using lead by increasing the maximum allowable junction temperature of semiconductors (maximum temperature for heating semiconductors in use) and complying with the restrictions on the use of certain hazardous substances such as lead (RoHS: Restriction of Hazardous Substances)
  • the use of bonding technology has been limited.
  • Lead-free solder has also been developed, but there is a problem that cracking occurs when used as a joining application. Therefore, a joining technique using a conductive paste is being promoted as an alternative technique for solder.
  • Solder consists of fine particles of gold, silver, or copper with a size of several tens of microns, and the conductive paste consists of fine particles of gold, silver, copper, or oxides of nano size to 1 micron or less. Development is underway.
  • the bonding process by heating and pressurization is also called “solid phase diffusion bonding”, and utilizes the diffusion of atoms generated between the bonding surfaces by pressing the base material (here, conductive paste) in close contact. And join.
  • solid phase diffusion bonding the bonding surfaces on which diffusion bonding is performed are bonded in a solid state.
  • pressure bonding is essential in solid phase diffusion bonding.
  • heat treatment is performed on the object to be processed with the conductive paste made of silver or silver oxide fine particles interposed therebetween, and the silver or silver oxide fine particles are sintered to perform pressureless bonding or self-weight pressure bonding.
  • a bonding process on an object to be processed for example, see Patent Documents 1 and 2.
  • the object to be processed is a semiconductor such as silicon (Si) or the above-described SiC. Even if there is, damage can be prevented. In addition, there is an effect that the joining ability (adhesion ability) is high.
  • the use of the conductive paste containing silver or the like causes the temperature to rise compared to the use of solder. Therefore, when a frame material (for example, a lead frame) made of an easily oxidizable metal such as copper (Cu) is used to join a workpiece, a reducing atmosphere or an oxygen-free atmosphere is used to prevent the frame material from being oxidized. Need to be fired. In that case, the conductive paste itself is difficult to be fired in a reducing atmosphere or an oxygen-free atmosphere, and problems such as being unable to be bonded occur.
  • a frame material for example, a lead frame
  • an easily oxidizable metal such as copper (Cu)
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a joining method having high joining ability.
  • the conductive paste contains a solvent for dissolving fine particles of gold, silver, copper and oxides thereof, and a dispersant for dispersing fine particles of gold, silver, copper and oxides thereof.
  • the dispersant When heated to sinter the fine particles of gold, silver, copper or oxides thereof, the dispersant vaporizes, creating voids in the conductive paste, which is similar to pressureless or self-weight pressure bonding It was found that the bonding ability was low without the voids being removed at the pressure of. Therefore, paying attention to the above-mentioned Patent Document 3, in the case of combined heating in which heat treatment and vacuum treatment are combined, voids disappear due to the vacuum, and the joining ability increases even in pressureless joining or self-pressure joining. I came up with an idea.
  • the bonding capability can be increased by applying a combination of heat treatment, vacuum treatment, and plasma treatment to the bonding.
  • these fine particles have a size of nano size to 1 micron or less in the case of the conductive paste as described above.
  • the maximum thickness of the junction is about several hundreds of micrometers. Therefore, when fine particles having a size of nanometer to 1 micron or less are arranged with each other, it is considered that the gap between the fine particles adjacent to each other in the lateral direction becomes small as shown in the schematic diagram of FIG.
  • the bonding method according to the present invention is a bonding method in which fine particles of metal or metal oxide are sintered and bonded to an object to be processed, and flakes shaped from the fine particles by mechanical stress are removed. And using a plasma processing step of performing a plasma treatment on the object to be processed with the flakes interposed therebetween, and sintering the flakes to perform a bonding process on the object to be processed. To do.
  • the plasma treatment process performs the plasma treatment on the object to be treated with the flakes interposed. Do. Increase the contact area between the flakes and apply residual stress inside the flakes. Furthermore, since the diffusion of the metal is promoted by the plasma treatment, the bonding ability is increased. Further, the processing time can be shortened as compared with the conventional heat bonding process (without performing plasma processing), and the processing efficiency is improved and the effect of greatly contributing to the productivity is also achieved.
  • the plasma treatment while controlling the relative amount of radicals to ions in the plasma to be increased. Since the workpiece may be damaged by the ions, the ions can be damaged by blocking the ions or radicalizing the ions so that the amount of radicals relative to the ions increases. It is possible to perform the bonding process without imparting the above.
  • at least one of a plurality of objects to be bonded is a semiconductor, semiconductor damage due to ions increases, so by controlling so that the relative amount of radicals to ions increases, Bonding can be performed without damaging the semiconductor by the ions.
  • At least one of a plurality of objects to be bonded is a semiconductor. Even when a large-sized semiconductor is bonded using flakes formed from metal or metal oxide fine particles, pressureless bonding or self-pressure bonding is performed in a state where the bonding capability is high due to a vacuum state. It is also possible to increase the metal selectivity without damaging the semiconductor. Therefore, not only precious metals such as gold and silver but also base metals such as copper, tin, zinc and aluminum or alloys thereof can be selected. Therefore, it is possible to obtain a bonding material that is cheaper and has equivalent electric / thermal conduction / bonding characteristics.
  • the processing portion containing the object to be processed with a cooling gas containing noble gas, nitrogen or hydrogen without oxygen after the plasma processing process.
  • the treatment part is cooled by a cooling gas containing noble gas, nitrogen or hydrogen without oxygen, thereby forcibly cooling to the stage temperature as well as preventing oxidation while having a reducing effect. Therefore, it is not necessary to cool for a long time in an oxygen-free atmosphere, and the treatment time can be shortened while preventing oxidation while having a reducing effect.
  • the adhesive itself containing flakes shaped from fine particles of metal or metal oxide can be baked, and can be joined at the stage of the plasma treatment process.
  • the frame material and the bonding material can be immediately cooled after the plasma processing process, and the processing time can be shortened while preventing the frame material and the bonding material from being oxidized. Note that flakes shaped from metal oxide fine particles can be used for bonding due to the reduction effect.
  • cooling gas is a gas containing a rare gas
  • a plasma treatment is performed using the gas containing the rare gas described above in the plasma treatment process, and a treatment using the same gas as the plasma treatment is performed after the plasma treatment process. Cooling the part.
  • the processing time is further shortened while performing reduction processing from the stage of the plasma processing step. be able to.
  • gas consumption can be reduced.
  • the plasma treatment may be performed using hydrogen alone regardless of whether or not cooling is performed after the plasma treatment process. Since hydrogen has a reducing effect, the reduction treatment can be performed at the stage of the plasma treatment process. In view of improving safety, it is more preferable to perform plasma treatment using helium alone or a mixed gas of helium and hydrogen. Further, since hydrogen and helium penetrate into the inside as compared with an element having a small atomic number and a large molecular size, there is also an effect that it is easily diffused in the reduction treatment while alleviating damage to the surface of the object to be treated.
  • the plasma treatment process performs the plasma treatment on the object to be treated with the flakes interposed.
  • the bonding ability is increased.
  • the processing time can be shortened as compared with the conventional heat bonding process (without performing plasma processing), and the processing efficiency is improved and the effect of greatly contributing to the productivity is also achieved.
  • FIG. 1 is a schematic diagram of a joining apparatus according to an embodiment.
  • description will be made by taking an example of die bonding in which a diced semiconductor chip is bonded and mounted (mounted) on a frame including a mounting substrate and a lead frame. Therefore, in the present embodiment, a semiconductor chip and a frame will be described as an example of objects to be bonded.
  • the bonding apparatus includes a chamber 1 and an electric heater 2 in the chamber 1.
  • a vacuum pump 3 is provided in order to reduce the pressure inside the chamber 1 to make a vacuum.
  • the chamber 1 corresponds to the processing unit in the present invention.
  • the bonding apparatus includes a stage 4 on which the semiconductor chip C and the frame F with the conductive paste P interposed are placed.
  • the electric heater 2 described above is provided in the stage 4.
  • the mounting substrate is plated or wired, and the semiconductor chip C is provided with back metal or electrodes, but these are not shown.
  • the semiconductor chip C a semiconductor such as silicon (Si), silicon carbide (SiC), or gallium nitride (GaN) is used.
  • the mounting substrate a metal substrate for heat dissipation and an insulating substrate such as a glass epoxy substrate or a ceramic substrate are used between the wirings.
  • a paste containing flakes shaped from metal or metal oxide fine particles by mechanical stress is used.
  • the semiconductor chip C and the frame F correspond to objects to be processed in the present invention.
  • pressureless bonding or self-weight pressure bonding can be performed in a state where the bonding capability is high due to the vacuum state. Therefore, metal selectivity is widened, and metals other than noble metals such as gold and silver can be used.
  • base metals such as copper, tin, zinc, and aluminum, or alloys thereof can be used.
  • a paste containing flakes shaped from metal fine particles may be used, or a paste containing flakes shaped from metal oxide fine particles may be used due to the reduction effect. Also good.
  • the metal can be selected according to the material and temperature characteristics of the base material (here, the frame F) and the chip (here, the semiconductor chip P). There is also an effect that damage to the chip due to temperature can be reduced. Furthermore, for example, a chip provided with an aluminum pad (aluminum pad) due to the difference in the rate of temperature rise due to metal can also selectively raise the temperature of the metal at the connection without raising the temperature of aluminum. . Even if a brittle material such as SiC is used for the semiconductor chip, it is not damaged in the case of pressureless bonding.
  • a noble metal such as gold or silver may be used, or a base metal such as copper, tin, zinc or aluminum or an alloy thereof may be used.
  • a paste containing flakes shaped from fine particles by mechanical stress is used instead of conventional metal fine particles of nano size to 1 micron or less.
  • the flakes are shaped into a flake shape by physical treatment such as hitting spherical particles.
  • Mechanical stress also refers to the physical treatment described above.
  • the size of the flakes may be a micrometer size, and the major axis is 1 ⁇ m to 100 ⁇ m, preferably 1 ⁇ m to several tens of ⁇ m.
  • the electric heater 2 is provided in the stage 4, but the electric heater 2 is not necessarily provided in the stage 4, and the electric heater is provided in the vicinity of the semiconductor chip C and the frame F with the conductive paste P interposed. 2 may be provided. Further, the electric heater 2 is not necessarily required. As illustrated in a microwave heater or a lamp heater made of SiC, a heating unit that is normally used for heat treatment is provided in the chamber 1. The heating unit is not particularly limited.
  • the bonding apparatus has a supply flow path 5 for supplying a gas for plasma (indicated by “Gas” in FIG. 1) and a large number of holes 6a to block ions in the plasma and only radicals. And a punching metal 6 that passes through the hole 6a.
  • a gas (process gas) for plasma a rare gas such as argon (Ar) or helium (He) is used in addition to hydrogen (H 2 ), oxygen, or nitrogen.
  • the chamber 1 is cooled with a cooling gas containing noble gas, nitrogen or hydrogen without oxygen.
  • a gas containing a rare gas is used as a plasma gas (process gas).
  • a gas containing helium is optimal.
  • helium penetrates into the interior as compared with an element having a large molecular size, damage to the surface of an object to be processed such as the semiconductor chip C or the frame F is further alleviated.
  • the gas may be a mixed gas of helium and another element, or helium alone.
  • the gas containing helium is a mixed gas of helium and hydrogen (H 2 )
  • H 2 hydrogen
  • it can be cooled while having a reduction effect by hydrogen.
  • hydrogen penetrates into the inside as compared with an element having a large molecular size, so that the damage to the surface of an object to be processed such as the semiconductor chip C and the frame F is further reduced. .
  • the cooling gas may not necessarily include a rare gas.
  • the cooling gas may be a gas containing nitrogen.
  • Plasma is generated in the chamber 1 by supplying gas into the chamber 1 through the supply flow path 5 and adding energy such as microwaves (indicated as “Power” in FIG. 1) to the process gas. Then, plasma processing is performed on the semiconductor chip C and the frame F placed on the stage 4. In addition to adding energy such as microwaves to the process gas, power may be applied to electrodes (not shown) to generate plasma in the chamber 1 by plasma discharge.
  • energy such as microwaves (indicated as “Power” in FIG. 1)
  • power may be applied to electrodes (not shown) to generate plasma in the chamber 1 by plasma discharge.
  • the punching metal 6 is not particularly limited as long as it is a metal that blocks ions and allows radicals to pass.
  • the punching metal 6 may be grounded or simply installed in the chamber 1.
  • FIG. 2 is a flowchart showing a series of flows of the joining method according to the embodiment. Since the electric heater 2 is used, FIG. 2 will be described assuming that step S1 is first performed in order to uniformly distribute heat under atmospheric pressure.
  • Step S1 Heating under atmospheric pressure
  • the electric heater 2 is operated under atmospheric pressure to heat the chamber 1 under atmospheric pressure. By heating under atmospheric pressure, heat is evenly distributed under atmospheric pressure.
  • Step S2 Placement of Semiconductor Chip and Frame Semiconductor Chip C with Conductive Paste P Containing Flakes Shaped from Fine Particles by Mechanical Stress with Electric Heater 2 Continued to Operate at Atmospheric Pressure
  • the frame F is placed on the stage 4.
  • Step S3 Heat Treatment
  • the semiconductor chip C and the frame F with the conductive paste P interposed are placed on the stage 4 in a state where the electric heater 2 is kept operating at atmospheric pressure, it is provided in the stage 4.
  • the electric heater 2 heats the semiconductor chip C and the frame F, the semiconductor chip C and the frame F are heated at atmospheric pressure.
  • Step S4 Vacuuming / Vacuum Processing Inside the chamber 1 with the semiconductor chip C and the frame F placed on the stage 4 and accommodated in the chamber 1 after the heat treatment with the electric heater 2 kept operating.
  • the vacuum pump 3 is evacuated to a vacuum by reducing the pressure. Due to this evacuation, the inside of the chamber 1 is evacuated, so that the semiconductor chip C and the frame F are processed in a vacuum. Then, by continuing to operate the electric heater 2 in a vacuum state, the heat treatment is continuously performed in a vacuum state.
  • Step S5 Plasma generation After the heat treatment in steps S3 and S4, and further after the vacuum treatment in step S4, the semiconductor chip C and the frame F are placed on the stage 4 and accommodated in the chamber 1 and supplied. Gas is supplied through the passage 5 into the chamber 1 until a predetermined pressure (for example, about 20 Pascals) is reached. Then, plasma energy is generated in the chamber 1 by adding energy such as microwaves (indicated as “Power” in FIG. 1) to the process gas. In the case where the semiconductor chip C and the frame F are accommodated in the chamber 1 and any of the semiconductor chip C, the frame F, or the plasma generation is disturbed, the semiconductor chip C is necessary as necessary until the next step S6. The frame F may be once lifted from the chamber 1.
  • a predetermined pressure for example, about 20 Pascals
  • Step S6 Plasma Processing With the semiconductor chip C and the frame F placed on the stage 4 and accommodated in the chamber 1, the semiconductor chip C and the frame F are subjected to plasma processing. Since the semiconductor chip C and the frame F may be damaged by the ions, in order to prevent the damage, the ions are blocked by the punching metal 6 and controlled so that the relative amount of radicals to the ions is increased.
  • This step S6 corresponds to the plasma processing process in the present invention.
  • Step S7 Chamber Cooling After the plasma treatment process in step S6, the chamber 1 is cooled by a cooling gas containing noble gas, nitrogen or hydrogen without oxygen.
  • a cooling gas containing noble gas, nitrogen or hydrogen without oxygen When the chamber 1 is cooled using the same gas as the plasma treatment, only energy such as microwaves needs to be stopped. If the amount of gas that can be cooled is not sufficient, the gas is appropriately supplied into the chamber 1 through the supply channel 5. Further, when the chamber 1 is cooled using a gas different from the plasma treatment, the gas is supplied into the chamber 1 through the supply flow path 5 and cooled to an amount that can be cooled as described above.
  • Step S8 Are there semiconductor chips and frames? After the plasma processing in step S6, the semiconductor chip C and the frame F after cooling in step S7 are lifted from the chamber 1. Until the semiconductor chip C and the frame F to be subjected to the single wafer processing are eliminated, the single wafer processing is performed in which the process gas is returned from the process gas filling state to the atmospheric pressure, the process returns to step S1, and steps S1 to S8 are repeated. That is, the single-wafer processing is performed by repeatedly placing the next semiconductor chip C and frame F on the stage 4 after performing the processing in steps S1 to S8. When the semiconductor chip C and the frame F to be subjected to the single wafer processing are eliminated, a series of joining processes is finished.
  • steps S2 to S8 may be repeated. In other words, if heating at atmospheric pressure in step S1 can be substituted with process gas or cooling gas, the gas may be returned to atmospheric pressure without degassing.
  • the plasma processing process in step S6 includes the semiconductor chip C and the flakes interposed therebetween.
  • Plasma processing is performed on the frame F. Increase the contact area between the flakes and apply residual stress inside the flakes. Furthermore, since the diffusion of the metal is promoted by the plasma treatment, the bonding ability is increased. Further, the processing time can be shortened as compared with the conventional heat bonding process (without performing plasma processing), and the processing efficiency is improved and the effect of greatly contributing to the productivity is also achieved.
  • the plasma treatment by controlling the amount of radicals relative to ions in the plasma to be increased.
  • the punching metal 6 is used to block ions, and control is performed so that the relative amount of radicals to ions increases. Since the semiconductor chip C and the frame F may be damaged by the ions, the semiconductor chip C and the frame F are damaged by the ions by controlling the ions so that the relative amount of radicals with respect to the ions increases. It is possible to perform the bonding process without imparting the above.
  • a semiconductor semiconductor chip C, for example, a semiconductor such as SiC
  • the bonding process can be performed without damaging the semiconductor due to ions by controlling the relative amount of radicals relative to ions to be increased.
  • the method for controlling the relative amount of radicals with respect to ions to be increased is not limited to the punching metal 6.
  • the ion may be radicalized by a laser or the like, and control may be performed so that the relative amount of the radical with respect to the ion increases.
  • At least one of a plurality (two in this embodiment) of objects to be bonded is a semiconductor.
  • one of the two objects to be processed is a semiconductor chip C made of a semiconductor such as SiC.
  • a large-sized semiconductor here, semiconductor chip C
  • self-weight pressurization joining can be performed and there also exists an effect that the selectivity of a metal spreads, without giving a damage to a semiconductor. Therefore, not only precious metals such as gold and silver but also base metals such as copper, tin, zinc and aluminum or alloys thereof can be selected. Therefore, it is possible to obtain a bonding material that is cheaper and has equivalent electric / thermal conduction / bonding characteristics.
  • a processing unit in this embodiment, that accommodates the semiconductor chip C and the frame F with an oxygen-free cooling gas containing noble gas, nitrogen, or hydrogen.
  • the chamber 1) is preferably cooled.
  • the treatment part (chamber 1) is cooled with a cooling gas containing noble gas, nitrogen or hydrogen without oxygen, thereby preventing oxidation and reducing the temperature to the stage 4 temperature. Force cooling. Therefore, it is not necessary to cool for a long time in an oxygen-free atmosphere, and the treatment time can be shortened while preventing oxidation while having a reducing effect.
  • the adhesive in this embodiment
  • the frame material and the bonding material can be immediately cooled after the plasma processing process, and the processing time can be shortened while preventing the frame material and the bonding material from being oxidized. Note that flakes shaped from metal oxide fine particles can be used for bonding due to the reduction effect.
  • An example of the cooling gas is a gas containing a rare gas (for example, helium).
  • Plasma treatment is performed using the gas containing the rare gas described above in the plasma treatment process, and the same gas as the plasma treatment after the plasma treatment process. Is used to cool the processing unit (chamber 1).
  • the processing time can be further increased while performing the reduction process from the stage of the plasma processing process. It can be further shortened.
  • gas consumption can be reduced.
  • the present invention is not limited to the above embodiment, and can be modified as follows.
  • the semiconductor chip and the frame by die bonding are taken as an example of the object to be processed. However, it is applied to the wire bonding after die bonding, or the wiring substrate on which the electrodes are wired. As exemplified in application to electrode bonding for bonding semiconductor chips, there is no particular limitation as long as it can be a bonding target.
  • one is a semiconductor chip, for example, and the other is a mounting substrate made of a metal substrate or an insulating substrate, for example.
  • the semiconductor is not limited to a semiconductor as long as it can be a bonding target.
  • the number of junctions is not limited to two and may be three or more.
  • the processing portion (chamber 1 in the embodiment) is cooled by a cooling gas containing oxygen and a rare gas, nitrogen, or hydrogen.
  • a cooling gas containing oxygen and a rare gas, nitrogen, or hydrogen.
  • only reduction is performed during the plasma treatment process, only reduction is performed after the plasma treatment process, or only reduction is performed continuously from the plasma treatment process to the plasma treatment process.
  • plasma treatment may be performed using hydrogen alone. Since hydrogen has a reducing effect, the reduction treatment can be performed at the stage of the plasma treatment process.
  • the punching metal 6 (see FIG. 1) is controlled so that the relative amount of radicals to ions is increased.
  • the amount of radicals relative to ions it is not always necessary to control the amount of radicals relative to ions to be increased.
  • the vacuum processing is performed before the plasma processing.
  • the vacuum processing is not necessarily performed as long as the workpieces to be bonded can withstand pressurization.
  • the heat treatment is performed before the plasma treatment, but the heat treatment is not necessarily performed.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Composite Materials (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Powder Metallurgy (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Die Bonding (AREA)

Abstract

L'invention porte sur un procédé d'assemblage utilisant des paillettes formées à partir de fines particules de métal ou d'oxyde métallique à l'aide d'une contrainte mécanique, un traitement par plasma, dans un processus de traitement par plasma d'une étape (S6), étant effectué sur une puce à semi-conducteur et un châssis entre lesquels de telles paillettes sont intercalées. La surface de contact entre les paillettes est accrue et une contrainte résiduelle est appliquée au sein des paillettes. En outre, en raison du traitement par plasma, une liaison a lieu au niveau atomique et donc l'aptitude d'assemblage dans la direction horizontale et dans la direction verticale est accrue. De plus, par comparaison avec un traitement d'assemblage thermique classique (dans lequel un traitement par plasma n'est pas effectué), la durée du traitement peut être réduite et la présente invention crée un effet de forte contribution à la productivité grâce à une efficacité de traitement améliorée.
PCT/JP2013/002963 2013-05-08 2013-05-08 Procede d'assemblage WO2014181372A1 (fr)

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PCT/JP2013/002963 WO2014181372A1 (fr) 2013-05-08 2013-05-08 Procede d'assemblage
JP2015515653A JP6087425B2 (ja) 2013-05-08 2013-05-08 接合方法

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2018181083A1 (fr) * 2017-03-28 2018-10-04 Ｄｏｗａエレクトロニクス株式会社 Matériau de liaison et corps lié au moyen de celui-ci

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JP2012052198A (ja) * 2010-09-02 2012-03-15 Nippon Handa Kk ペースト状銀粒子組成物、金属製部材接合体の製造方法および金属製部材接合体

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WO2018181083A1 (fr) * 2017-03-28 2018-10-04 Ｄｏｗａエレクトロニクス株式会社 Matériau de liaison et corps lié au moyen de celui-ci
JP2018165387A (ja) * 2017-03-28 2018-10-25 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合体
CN110582362A (zh) * 2017-03-28 2019-12-17 同和电子科技有限公司 接合材料及使用该接合材料的接合体

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