WO2014176242A1 - Procédés et appareil utilisant des fluides excités pour nettoyer des plaquettes de polissage par planarisation mécano-chimique - Google Patents
Procédés et appareil utilisant des fluides excités pour nettoyer des plaquettes de polissage par planarisation mécano-chimique Download PDFInfo
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- WO2014176242A1 WO2014176242A1 PCT/US2014/034959 US2014034959W WO2014176242A1 WO 2014176242 A1 WO2014176242 A1 WO 2014176242A1 US 2014034959 W US2014034959 W US 2014034959W WO 2014176242 A1 WO2014176242 A1 WO 2014176242A1
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- Prior art keywords
- polishing pad
- energized fluid
- energized
- fluid delivery
- pad
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Definitions
- the present invention generally relates to electronic device manufacturing, and more particularly is directed to using fluids to clean chemical mechanical planarization (CMP) polishing pads.
- CMP chemical mechanical planarization
- CMP chemical mechanical polishing
- CMP is commonly used to flatten the surface of a substrate after etch and/or deposition steps, generally to such a degree that subsequent photolithography steps have a sufficient focus margin.
- CMP is performed by using a polishing pad in combination with a slurry of water, abrasives, and reactive chemicals for the desired chemical reaction or reactions.
- the polishing pad is caused to be pressed against the substrate surface and relative motion between the substrate and the pad is imparted (that is, by moving one or both of the substrate and the pad) .
- the polishing pad is conventionally a porous pliable material.
- Polyurethane foam is particularly common for use as a polishing pad.
- Surface asperities of the polishing pad are critical to the polishing process because they provide the mechanical polishing action.
- the pad is used for polishing, it tends to become smoother as the asperities are rubbed away and/or as slurry residues build up in the pores. As a result, the polishing process is degraded. It is therefore conventionally known to condition the polishing pad to roughen the surface and increase the open porosity of the foam.
- Inventive embodiments of methods and apparatus are provided for cleaning slurry and debris from CMP polishing pads by applying energized fluids to the polishing pads.
- Embodiments of the present invention use energized fluid (e.g., liguids and gases) to clean off slurry residues and pad debris between substrate polishing or during wafer polishing.
- energized fluid e.g., liguids and gases
- a vacuum pump is used to remove the dislodged material.
- a scraper, beater, and/or a rotating bristle brush may selectively, continuously, or intermittently contact the polishing pad to further help loosen and dislodge residue and debris.
- the energized fluid instead of merely pressurizing a fluid, can be acoustically energized (e.g., via acoustic cavitation), pneumatically assisted (e.g., using a liguid mixed with a pressurized gas), and/or thermally state changed (e.g., liguid heated to gas) .
- Other methods and combinations of energizing fluids can be used.
- a method for cleaning a chemical mechanical polishing (CMP) pad includes positioning an energized fluid delivery assembly over a CMP polishing pad; rotating the polishing pad on a platen; energizing a fluid within the energized fluid delivery assembly; applying the energized fluid to the polishing pad to dislodge slurry residue and debris; and removing the dislodged slurry residue and debris using a vacuum suction unit .
- CMP chemical mechanical polishing
- a system for cleaning a chemical mechanical polishing (CMP) pad includes a processor; and a memory storing instructions executable by the processor, the instructions operative to: position an energized fluid delivery assembly over a CMP polishing pad; rotate the polishing pad on a platen; energize a fluid within the energized fluid delivery assembly; apply the energized fluid to the polishing pad to dislodge slurry residue and debris; and remove the dislodged slurry residue and debris using a vacuum suction unit .
- CMP chemical mechanical polishing
- an apparatus for cleaning a chemical mechanical polishing (CMP) pad includes an energized fluid delivery assembly configured to energize a fluid and apply the energized fluid to a CMP polishing pad to dislodge slurry residue and debris from the polishing pad; and a vacuum suction unit configured to remove the dislodged slurry residue and debris .
- CMP chemical mechanical polishing
- a system for cleaning a chemical mechanical polishing (CMP) pad includes a polishing pad configured to be rotated on a platen; a polishing head configured to hold a substrate against the polishing pad; and an energized fluid delivery assembly configured to apply an energized fluid to the polishing pad to dislodge slurry residue and debris from the polishing pad.
- CMP chemical mechanical polishing
- FIG. 1 illustrates a schematic side-view drawing depicting an example of a CMP system according to
- FIGs. 2A to 2C illustrates top, side, and front views respectively of a CMP polishing pad and an example of an energized fluid cleaning assembly according to a first embodiment.
- FIGs. 3A and 3B illustrates top and side views respectively of a CMP polishing pad and an example of an energized fluid cleaning assembly according to a second embodiment.
- FIGs. 4A to 4C illustrates top, side, and front views respectively of a CMP polishing pad and an example of an energized fluid cleaning assembly according to a third embodiment.
- FIG. 5 illustrates a flowchart depicting an example method of cleaning a CMP polishing pad using energized fluid according to some embodiments.
- Embodiments of the present invention provide improved systems, methods and apparatus configured to clean slurry and debris from CMP polishing pads by applying energized fluids to the polishing pads.
- CMP CMP
- slurries and pad debris are accumulated and become trapped within pad grooves and pores, which can cause scratches on the substrate being polished.
- Current state-of-the-art technology uses a high-pressure (e.g., -40 PSI) de-ionized water (DIW) rinse and/or vacuum to pick up such residues from the pad.
- DIW de-ionized water
- the high-pressure DIW rinse and vacuum have been shown not to be sufficient to dislodge slurry/debris residues from the pad grooves and pores. Therefore, conventional methods of using high-pressure DIW rinse and vacuum are not sufficient for pad cleaning.
- One or more embodiments of the present invention use energized fluid (e.g., liguids and gases) to clean off slurry residues and pad debris between wafer polishing or during wafer polishing.
- energized fluid e.g., liguids and gases
- a vacuum pump is used to remove the dislodged material.
- FIG. 1 a side view of an example
- CMP chemical-mechanical planarization
- the system 100 also includes an energized fluid delivery assembly 112 supported by fluid delivery arm 114.
- the fluid delivery arm also supports a vacuum suction unit 116 operative to remove residue and debris dislodged by the application of the energized fluid to the CMP
- polishing pad 106 polishing pad 106.
- controller 118 e.g., a processor
- programmable logic array operative to execute instructions (e.g., software, programs, commands, signals, etc.) to perform the methods of the present invention, and in particular, the methods described below with respect to the flowchart in FIG. 5.
- instructions e.g., software, programs, commands, signals, etc.
- the energized fluid can be acoustically energized.
- Ultrasonically or megasoincally energized fluid e.g., fluid that experiences acoustic cavitation
- FIGs. 2A through 2C depict top, side and front views respectively of an energized fluid delivery assembly 112 (FIG. 1) that includes an acoustically energized fluid delivery unit 212 that is adapted to delivery acoustically energized fluid 214 to the polishing pad 106 while vacuum suction unit 116 removes dislodged residue and debris.
- the acoustically energized fluid delivery unit 212 can include a piezoelectric transducer (PZT) operating in the freguency range from the lower ultrasonic range (approximately 20 KHz) to the upper megasonic range (approximately 2 MHz.) Other freguency ranges can be used.
- PZT piezoelectric transducer
- a suitable acoustic energy source generator e.g., a PZT
- a PZT can be rectangular with dimensions in the range of approximately 5 mm x 50 mm to approximately 15 mm x 1500 mm.
- Other sized PZTs can be used.
- a PZT with a length of 15 inches may be used.
- the vacuum suction unit 116 can be the same length .
- shorter length PZTs can be used in the acoustically energized fluid delivery unit 212 where the acoustically energized fluid delivery unit 212 is adapted to be swept from the center of the pad 106 to the edge of the pad 106.
- the fluid delivery arm 114 (FIG. 1), can be used to sweep the acoustically energized fluid delivery unit 212 across the pad 106 radially.
- a separate gantry can be used to sweep the acoustically energized fluid delivery unit 212 back and forth radially over the pad 106.
- the acoustically energized fluid delivery unit 212 can include a housing with an input channel to receive fluid, a PZT held within the housing to apply energy to the received fluid, and a slot or
- the housing or individual nozzles can be configured to rock back and forth as energized fluid 214 is being dispensed to further enhance the loosening action of the energized fluid 214 by continually altering the angle of impact of the energized fluid 214 on the pad 106.
- the acoustically energized fluid delivery unit 212 can be disposed from approximately 4 mm to approximately 10 mm above the polishing pad 106 during application of the acoustically energized fluid 214.
- the vacuum suction unit can be similarly disposed from approximately 4 mm to approximately 10 mm above the polishing pad 106 during application of the acoustically energized fluid 214.
- the fluid that is energized can be deionized water (DIW) and/or cleaning chemistry.
- the temperature of the fluid can be from 20C to 90C. Other temperatures can be used.
- the flow rate of the energized fluid 214 can be in the range of approximately 100 ml/min to approximately 10 L/min. Other flow rates can be used.
- the cleaning chemistry can be, for example, diluted potassium hydroxide (KOH) when using, for example, SemiSperse ® SS12 slurry manufactured by Cabot Microelectronics Corporation of Aurora, IL.
- a scraper, beater, and/or a rotating bristle brush may selectively, continuously, or intermittently contact the polishing pad 106 to further help loosen and dislodge residue and debris.
- the use of a scraper, beater, and/or a rotating bristle brush may be selectively applied by the controller 118.
- An optical sensor can be used to inspect the pad 106 and provide information to the controller 118 as to the status of the pad 106. Based on the status of the pad 106, the
- controller 118 can determine if the pad should continue to be treated with energized fluid, if higher energy should be applied to the fluid (e.g., heat, pressure, acoustic energy, etc.), or of the pad should receive contact from a scraper, beater, and/or a rotating bristle brush.
- higher energy e.g., heat, pressure, acoustic energy, etc.
- the energized fluid can
- pressurized gas assisted liquid spray jets can be used to effectively dislodge residue and debris from large areas like polishing pad grooves and also from smaller areas like polishing pad pores. As noted, this capability provides for high cleaning efficiency of the polishing pad as compared to conventional pad cleaning methods.
- the pressurized gas assisted spray removes particles via fluid droplet momentum transfer. Because this method has a lower fluid flow rate, not only is DIW conserved, the amount of splash is drastically reduced and therefore, there is
- FIGs. 3A and 3B depict top and side views
- an energized fluid delivery assembly 112 (FIG. 1) that includes an pressurized gas energized fluid delivery unit 312 that is adapted to delivery pressurized gas energized fluid 314 to the polishing pad 106 while vacuum suction unit 116 removes dislodged residue and debris.
- the pressurized gas energized fluid delivery unit 312 that is adapted to delivery pressurized gas energized fluid 314 to the polishing pad 106 while vacuum suction unit 116 removes dislodged residue and debris.
- energized fluid delivery unit 312 can include a
- the mixing chamber within the pressurized gas energized fluid delivery unit 312 can be rectangular with dimensions in the range of approximately 5 mm x 50 mm to approximately 15 mm x 1500 mm. Other sized mixing chambers can be used. For example, with a polishing pad radius of 15 inches, a mixing chamber with a length of 15 inches may be used. Likewise, the vacuum suction unit 116 can be the same length. In some embodiments, shorter length mixing chambers can be used in the pressurized gas energized fluid delivery unit 312 where the delivery unit 312 is adapted to be swept from the center of the pad 106 to the edge of the pad 106 as indicated by the double ended arrow in FIG. 3A. In such embodiments, the fluid delivery arm 114 (FIG. 1), can be used to sweep the pressurized gas energized fluid delivery unit 312 across the pad 106 radially.
- a separate gantry can be used to sweep the pressurized gas energized fluid delivery unit 312 back and forth radially over the pad 106.
- the pressurized gas energized fluid delivery unit 312 can include a housing with a liguid input channel to receive the liguid and a gas input channel to receive the pressurized gas.
- the housing also includes the mixing chamber to apply the pressurized gas to the liguid and a slot or plurality of nozzles along the bottom length of the housing aimed at the polishing pad 106 to distribute the energized fluid 314 across the polishing pad 106.
- the housing or individual nozzles can be configured to rock back and forth as energized fluid 314 is being dispensed to further enhance the loosening action of the energized fluid 314 by continually altering the angle of impact of the energized fluid 314 on the pad 106.
- the pressurized gas energized fluid delivery unit 312 can be disposed from approximately 10 mm to approximately 100 mm above the polishing pad 106 during application of the pressurized gas energized fluid 314.
- the vacuum suction unit can be disposed from approximately 4 mm to
- the fluid that is energized can be deionized water (DIW) and/or cleaning chemistry.
- the temperature of the fluid can be from 20C to 90C. Other temperatures can be used.
- the air pressure applied to energize the fluid can be in the range from approximately 40 PSI to approximately 140 PSI. Other pressures can be used.
- the liguid flow rate can be in the range from approximately 100 ml/min to approximately 2 L/min. Other flow rates can be used.
- the droplet speed can be in the range from approximately 100 m/s to
- the cleaning chemistry can be, for example, diluted potassium hydroxide (KOH) when using, for example, SemiSperse ® SS12 slurry manufactured by Cabot Microelectronics Corporation of Aurora, IL.
- KOH diluted potassium hydroxide
- a scraper, beater, and/or a rotating bristle brush may selectively, continuously, or intermittently contact the polishing pad 106 to further help loosen and dislodge residue and debris.
- the use of a scraper, beater, and/or a rotating bristle brush may be selectively applied by the controller 118.
- An optical sensor can be used to inspect the pad 106 and provide information to the controller 118 as to the status of the pad 106. Based on the status of the pad 106, the
- controller 118 can determine if the pad should continue to be treated with energized fluid, if higher energy should be applied to the fluid (e.g., heat, pressure, acoustic energy, etc.), or of the pad should receive contact from a scraper, beater, and/or a rotating bristle brush.
- higher energy e.g., heat, pressure, acoustic energy, etc.
- the energized fluid can
- thermally energized to change state can be thermally energized to change state.
- thermally energized liguid forced to change into gas e.g., using an ultra-pure DIW to steam generator
- thermally energized gas removes particles via heat transfer. Because this method has a lower fluid flow rate, not only is DIW conserved, the amount of splash is drastically reduced and therefore, there is substantially less slurry residue build up within the system 100.
- FIGs. 4A through 4C depict top, side, and front views respectively of an energized fluid delivery assembly 112 (FIG. 1) that includes a thermally energized fluid delivery unit 412 that is adapted to delivery thermally energized fluid 414 to the polishing pad 106 while vacuum suction unit 116 removes dislodged residue and debris.
- the thermally energized fluid delivery unit 412 can include a heater to vaporize cleaning fluid.
- the vaporizing chamber within the thermally energized fluid delivery unit 412 can be rectangular with dimensions in the range of approximately 5 mm x 50 mm to
- vaporizing chambers approximately 15 mm x 1500 mm.
- Other sized vaporizing chambers can be used.
- a vaporizing chamber with a length of 15 inches may be used.
- the vacuum suction unit 116 can be the same length.
- shorter length vaporizing chambers can be used in the thermally energized fluid delivery unit 412 where the delivery unit 412 is adapted to be swept from the center of the pad 106 to the edge of the pad 106.
- the fluid delivery arm 114 (FIG. 1), can be used to sweep the thermally energized fluid delivery unit 412 across the pad 106 radially.
- a separate gantry can be used to sweep the thermally energized fluid delivery unit 412 back and forth radially over the pad 106.
- the thermally energized fluid delivery unit 412 can include a housing with a liguid input channel to receive the liguid.
- the housing can hold a heating element that receives electrical energy to vaporize the liguid.
- the housing also includes the vaporizing chamber to apply the thermal energy to the liguid and a slot or plurality of nozzles along the bottom length of the housing aimed at the polishing pad 106 to distribute the energized fluid 414 across the polishing pad 106.
- the housing or individual nozzles can be configured to rock back and forth as energized fluid 414 is being dispensed to further enhance the loosening action of the energized fluid 414 by continually altering the angle of contact of the energized fluid 414 on the pad 106.
- the thermally energized fluid delivery unit 412 can be disposed from approximately 4 mm to approximately 10 mm above the polishing pad 106 during application of the thermally energized fluid 414.
- the vacuum suction unit can be similarly disposed from approximately 4 mm to approximately 10 mm above the polishing pad 106 during application of the thermally energized fluid 414.
- the fluid that is energized can be deionized water (DIW) and/or cleaning chemistry.
- the temperature of the fluid can be from 20C to 90C. Other temperatures can be used.
- the heat energy applied to energize the fluid can be in the range from approximately 2 Kcal (2 Cal) to approximately 2000 Kcal (2000Cal) . Other amounts of thermal energy can be used.
- the liguid flow rate can be in the range from approximately 100 ml/min to approximately 10 L/min. Other flow rates can be used.
- the cleaning chemistry can be, for example, diluted potassium hydroxide (KOH) when using, for example, SemiSperse ® SS12 slurry manufactured by Cabot Microelectronics Corporation of Aurora, IL.
- a scraper, beater, and/or a rotating bristle brush may selectively, continuously, or intermittently contact the polishing pad 106 to further help loosen and dislodge residue and debris.
- the use of a scraper, beater, and/or a rotating bristle brush may be selectively applied by the controller 118.
- An optical sensor can be used to inspect the pad 106 and provide information to the controller 118 as to the status of the pad 106. Based on the status of the pad 106, the
- controller 118 can determine if the pad should continue to be treated with energized fluid, if higher energy should be applied to the fluid (e.g., heat, pressure, acoustic energy, etc.), or of the pad should receive contact from a scraper, beater, and/or a rotating bristle brush.
- higher energy e.g., heat, pressure, acoustic energy, etc.
- FIG. 5 a flowchart depicting an example method 500 of cleaning a CMP polishing pad is provided. Note that the steps listed can be implemented using the system 100 either manually by an operator or automatically by the controller 118 executing instructions or a program. In some embodiments, some steps may be performed manually while others are performed
- an energized fluid delivery assembly 112 is positioned above the CMP polishing pad (502) .
- the energized fluid delivery assembly 112 may be positioned over the pad 106 while CMP processing is performed.
- the method 500 may be performed while CMP processing is being performed.
- energizing the fluid can include applying acoustic energy, applying pressurized gas, applying thermal energy to change a liguid to a gas, or any combination of these methods.
- the energized fluid is applied to the polishing pad 106 while the pad 106 is monitored (506) .
- the energized fluid can be applied directly to the pad 106 and in some embodiments, the energized fluid can be sprayed at the pad 106 from continuously changing angles by pivoting the energized fluid delivery assembly 112 or its output ports (e.g., slot or nozzles).
- the energized fluid delivery assembly 112 can also be oscillated in a radial direction relative to the pad 106 to cover the full radius to the pad 106.
- the energized fluid can be simply be applied for a fixed amount of time or a fixed amount of energized fluid can be applied.
- an optical sensor can be used to monitor the pad 106.
- the vacuum suction unit 116 can include one or more sensors to determine if anything more than energized fluid is being removed from the pad 106 and thus, that the pad 106 is clean. Thus, cleaning completion can be determined based upon the pad 106 receiving a predefined amount of energized fluid, based on a predefined amount of time passing, or based upon feedback from one or more sensors providing status of the pad (508) .
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- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
La présente invention concerne des procédés conçus pour nettoyer une plaquette de polissage mécano-chimique (CMP). Les procédés consistent à positionner un ensemble de distribution de fluide excité; à faire tourner la plaquette de polissage sur une platine; à mettre sous tension un fluide dans l'ensemble de distribution de fluide excité; à appliquer le fluide excité à la plaquette de polissage afin de déloger les résidus et les débris de pâte; et à retirer les résidus et débris de pâte délogés à l'aide d'une unité d'aspiration sous vide. L'invention concerne également des systèmes et un appareil destinés à réaliser les procédés, ainsi que de nombreux autres aspects
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US13/869,307 | 2013-04-24 | ||
US13/869,307 US20140323017A1 (en) | 2013-04-24 | 2013-04-24 | Methods and apparatus using energized fluids to clean chemical mechanical planarization polishing pads |
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WO2014176242A1 true WO2014176242A1 (fr) | 2014-10-30 |
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PCT/US2014/034959 WO2014176242A1 (fr) | 2013-04-24 | 2014-04-22 | Procédés et appareil utilisant des fluides excités pour nettoyer des plaquettes de polissage par planarisation mécano-chimique |
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US (1) | US20140323017A1 (fr) |
TW (1) | TW201501869A (fr) |
WO (1) | WO2014176242A1 (fr) |
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JP7162465B2 (ja) | 2018-08-06 | 2022-10-28 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
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CN109562505A (zh) | 2018-10-24 | 2019-04-02 | 长江存储科技有限责任公司 | 具有刮擦固定装置的化学机械抛光设备 |
US11628478B2 (en) * | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
TW202110575A (zh) | 2019-05-29 | 2021-03-16 | 美商應用材料股份有限公司 | 用於化學機械研磨系統的蒸氣處置站 |
US11633833B2 (en) | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
TWI753460B (zh) * | 2019-06-27 | 2022-01-21 | 美商應用材料股份有限公司 | 用於化學機械研磨的蒸汽產生 |
US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
TWI765192B (zh) * | 2019-11-19 | 2022-05-21 | 大量科技股份有限公司 | 化學機械研磨裝置之研磨墊檢測方法與研磨墊檢測裝置 |
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2013
- 2013-04-24 US US13/869,307 patent/US20140323017A1/en not_active Abandoned
-
2014
- 2014-04-22 WO PCT/US2014/034959 patent/WO2014176242A1/fr active Application Filing
- 2014-04-24 TW TW103114862A patent/TW201501869A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001113455A (ja) * | 1999-10-14 | 2001-04-24 | Sony Corp | 化学的機械研磨装置及び方法 |
US20030153250A1 (en) * | 1999-11-10 | 2003-08-14 | Strasbaugh | Subaperture chemical mechanical planarization with polishing pad conditioning |
US20040087257A1 (en) * | 2002-10-22 | 2004-05-06 | Yong-Sung Hong | CMP equipment for use in planarizing a semiconductor wafer |
KR20060024102A (ko) * | 2004-09-13 | 2006-03-16 | 동부아남반도체 주식회사 | 화학기계적 연마장치 |
KR20090066131A (ko) * | 2007-12-18 | 2009-06-23 | 주식회사 동부하이텍 | 반도체 소자의 제조를 위한 cmp 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20140323017A1 (en) | 2014-10-30 |
TW201501869A (zh) | 2015-01-16 |
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