TW544374B - Conditioner of chemical-mechanical polishing station - Google Patents
Conditioner of chemical-mechanical polishing station Download PDFInfo
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- TW544374B TW544374B TW091119090A TW91119090A TW544374B TW 544374 B TW544374 B TW 544374B TW 091119090 A TW091119090 A TW 091119090A TW 91119090 A TW91119090 A TW 91119090A TW 544374 B TW544374 B TW 544374B
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- chemical mechanical
- mechanical polishing
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- 238000005498 polishing Methods 0.000 title claims abstract description 119
- 239000012530 fluid Substances 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims description 46
- 239000000126 substance Substances 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 230000003750 conditioning effect Effects 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 41
- 239000002245 particle Substances 0.000 description 17
- 230000007547 defect Effects 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010432 diamond Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 241001674048 Phthiraptera Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
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本發明是有關於一種化學機械研磨（Chemical Mechamcal P〇lishing，CMP)機台之裝置且特別是有關 於一種化學機械研磨機台之調節器（c〇nditi〇ner)。 化學機械研磨法是現今唯一能提供全面性平坦化的一 種技術。而其平坦化之原理是利用類似磨刀這種機械式的 原理，配合適當的化學助劑（Reagent)，而將晶圓表面高 低起伏的輪廓加以磨平。 第1圖所示，其繪示為習知一化學機械研磨機台之上 視簡圖；第2圖所示，其繪示為習知一化學機械研磨機台 之側視簡圖。The present invention relates to a device for a chemical mechanical polishing (CMP) machine, and more particularly to a controller for a chemical mechanical polishing machine. CMP is the only technique that can provide comprehensive planarization today. The principle of flattening is to use a mechanical principle similar to a sharpening knife and cooperate with appropriate chemical agents (Reagent) to smooth the contours of the wafer surface. FIG. 1 is a schematic view showing a conventional chemical mechanical polishing machine; FIG. 2 is a schematic side view showing a conventional chemical mechanical polishing machine.
請同時參照第1圖與第2圖，一化學機械研磨機台係包 括一研磨台100(Polishing Table)、一研磨塾（p〇iishing Pad)102、一晶圓載具（Wafer Carrier)104、一研磨液輸 送管件（Slurry Tube)108以及一調節器 (Condi t i oner)110 〇 其中，研磨墊1 0 2係舖在研磨台1 〇 〇上。晶圓載具1 〇 4 係配置在研磨墊1 〇 2之上方，其係用來抓住被研磨的晶圓 1 〇 6，以使晶圓1 0 6能於研磨墊1 〇 2上進行研磨。研磨液輸 送管件108係配置在研磨墊102之上方，其係用來輸送研磨 液到研磨墊1 0 2上。而調節器11 0係配置在研磨墊1 〇 2之上 方，且調節器1 1 0接觸研磨墊1 0 2之表面係嵌有許多堅硬顆 粒，例如是鑽石顆粒（Diamond Gri ts)或陶瓷顆粒，用以 調節研磨墊1 0 2之表面。 當進行化學機械研磨時，研磨台1 0 0與晶圓載具1 0 4分Please refer to FIG. 1 and FIG. 2 at the same time. A chemical mechanical polishing machine system includes a polishing table 100 (Polishing Table), a polishing pad 102, a wafer carrier 104, a Slurry tube 108 and a controller 110, among which polishing pad 102 is laid on polishing table 100. The wafer carrier 104 is disposed above the polishing pad 102, and is used to hold the wafer 106 to be polished, so that the wafer 106 can be polished on the polishing pad 102. The polishing liquid conveying pipe 108 is disposed above the polishing pad 102, and is used to convey the polishing liquid to the polishing pad 102. The adjuster 110 is disposed above the polishing pad 102, and the surface of the adjuster 110 contacting the polishing pad 102 is embedded with many hard particles, such as diamond particles or ceramic particles. Used to adjust the surface of the polishing pad 102. When performing chemical mechanical polishing, the polishing table 1 0 0 and the wafer carrier 1 4 4
^336twi pul 第4頁 544374 五'發明說明（2) 別沿一定的方向旋轉。而晶圓載具1 〇 4係抓住晶圓1 〇 6的背 面，而將晶圓104的正面壓在研磨墊102上。研磨液輸送管 件1 0 8則是將研磨液持續不斷地供應到研磨墊1 〇 2上。所 以’化學機械研磨程序就是當晶圓1 〇 6正面之凸出的部分 和研磨墊1 0 2接觸時，便可利用研磨液中的化學助劑，以 在晶圓106的正面產生化學反應，並且藉由研磨液中之研 磨粒（Abrasive Particles)以輔助機械研磨，而去除晶圓 106正面之凸出的部份。在反覆上述之化學反應與機械研 磨之後，便可以使晶圓1 〇 6之正面平坦化。 通常研磨墊102之表面上具有許多助於研磨的凹凸結 構’因此研磨墊102之表面係呈現！微米到2微米的粗糙^ 度。而一般化學機械研磨機台在研磨數片晶圓之後，原先 研磨墊102凹凸不平之表面將會變得平坦，以致研磨墊〖ο? 之研磨能力降低。而且，在研磨過後，從晶圓丨〇 6上被研 磨掉的物質還可能殘留在研磨墊1〇2上，如此將使得研磨 特性有所改變，進而影響研磨之效果。因此，通常在研磨 數片晶圓之後，都會利用調節器11〇來調節研磨墊1〇2，以 使=磨墊1〇2之表面恢復成凹凸不平的表面，並且同時刮 除基在研磨塾102中的殘留物。 而習知化學機械研磨機么夕上田#抑，4 Λ ^ ,,0 π君微口之调即器110係由一調節盤 Π 2以及鑲嵌在調節盤J J 2之一 Ρ ^ ^ 凋即面上之堅硬顆粒11 4(例 如疋鑽石顆粒或陶瓷顆粒）所槿占 F夕臣又说顆MU m 構成。然而，倘若調節器110 上之堅硬顆粒11 4因任何可能夕| 時，將合#日ΡΜ Μ + 2 素而掉落至研磨墊1 02上 4，將會使日日0 1 0 6在研磨過程中曹 々τ梃到掉洛下來之堅硬顆^ 336twi pul Page 4 544374 Five 'invention description (2) Do not rotate in a certain direction. The wafer carrier 104 grasps the back surface of the wafer 106, and presses the front surface of the wafer 104 on the polishing pad 102. The polishing liquid conveying pipe 108 supplies the polishing liquid continuously to the polishing pad 102. Therefore, the chemical mechanical polishing process is that when the protruding part of the front side of the wafer 106 is in contact with the polishing pad 102, the chemical assistant in the polishing liquid can be used to generate a chemical reaction on the front side of the wafer 106. And the abrasive particles in the polishing liquid (Abrasive Particles) are used to assist the mechanical polishing, so as to remove the convex portion on the front surface of the wafer 106. After repeating the above-mentioned chemical reaction and mechanical grinding, the front side of the wafer 106 can be planarized. Usually, the surface of the polishing pad 102 has a plurality of uneven structures that facilitate polishing. Therefore, the surface of the polishing pad 102 appears! Roughness from micron to 2 microns. However, after a general chemical mechanical polishing machine grinds several wafers, the uneven surface of the original polishing pad 102 will become flat, so that the polishing capability of the polishing pad 〖ο? Decreases. In addition, after grinding, the material ground from the wafer 106 may remain on the polishing pad 102, which will change the polishing characteristics and affect the polishing effect. Therefore, usually after polishing several wafers, the adjuster 11 is used to adjust the polishing pad 102, so that the surface of the polishing pad 10 is restored to an uneven surface, and at the same time, the substrate is scraped off. 102 residue. And the conventional chemical mechanical grinder Mo Xi Shangtian # Eli, 4 Λ ^ ,, 0 π Jun micro mouth tone adjuster 110 is composed of an adjustment disk Π 2 and one of the adjustment disk JJ 2 P ^ ^ The hard particles 11 4 (such as 疋 diamond particles or ceramic particles) are said to be composed of MU m. However, if the hard particles 11 4 on the regulator 110 are dropped onto the polishing pad 1 02 4 due to any possible time, it will make the day 0 1 0 6 grind In the process, Cao 々τ 梃 reached the hard particles that fell down.
544374544374
而於晶圓1 〇 6上產生缺陷。 五、發明說明 粒傷害， 因此’本發明的目的就是在提供一種化學機械研磨機 台之調節器，以解決習知調節器可能會發生堅硬顆粒掉落 至研磨墊，而導致晶圓缺陷產生之情形。 /Defects occur on the wafer 106. 5. The invention explains the damage of grains. Therefore, the purpose of the present invention is to provide a regulator of a chemical mechanical polishing machine to solve the problem that conventional regulators may cause hard particles to fall to the polishing pad, which may cause wafer defects. situation. /
本發明提出一種化學機械研磨機台之調節器，其包括 一調節盤、一管件、一高壓流體源以及複數個喷嘴。其 中’此調節盤具有一輸入面以及一輸出面。而管件之一端 係連接在調節盤之輸入面上，且高壓流體源係連接在管件 之另一端。另外，喷嘴則是配置在調節盤之輸出面上。在 本發明中，高壓流體源可以是一高壓液體源或一高壓氣體 源，而高壓液體源所提供之一液體例如是水，高壓氣體源 所提供之一氣體例如是氮氣。而且高壓液體源或高壓氣體 2所供應之一高壓液體之壓力或一高壓氣體之壓力例如是 )丨於1 0 p s i至1 〇 〇 p s i之間。因此，利用本發明之調節器 j調節研磨墊時，係利用調節器之喷嘴所喷出高壓液體或 南壓氣體’以將研磨墊之表面恢復成凹凸不平的表面並刮 除塞在研磨墊中的殘留物。 ^ 本發明提出一種化學機械研磨機台，其包括一研磨 ^ 研磨塾、一晶圓載具、一研磨液輸送管件以及一調The invention provides a regulator for a chemical mechanical polishing machine, which comprises a regulating disc, a tube, a high-pressure fluid source, and a plurality of nozzles. Among them, the adjusting disk has an input surface and an output surface. One end of the pipe is connected to the input surface of the adjusting disc, and a high-pressure fluid source is connected to the other end of the pipe. In addition, the nozzle is arranged on the output surface of the adjustment disk. In the present invention, the high-pressure fluid source may be a high-pressure liquid source or a high-pressure gas source, and a liquid provided by the high-pressure liquid source is, for example, water, and a gas provided by the high-pressure gas source is, for example, nitrogen. Moreover, the pressure of a high-pressure liquid or a high-pressure gas supplied by the high-pressure liquid source or the high-pressure gas 2 is, for example, between 10 ps i and 100 ps i. Therefore, when using the adjuster j of the present invention to adjust the polishing pad, the high-pressure liquid or south pressure gas ejected from the nozzle of the adjuster is used to restore the surface of the polishing pad to an uneven surface and scrape the plug in the polishing pad. Residues. ^ The present invention proposes a chemical mechanical polishing machine, which includes a grinding ^ grinding 塾, a wafer carrier, a polishing liquid delivery pipe and a tuning
^ /、中研磨墊係配置在研磨台上。晶圓載具係配置 研磨墊之上方，其係凡用來抓住一晶圓以使晶圓能於研 …塾上進行研磨。研磨液輸送管件係配置在研磨墊之上 ^ ’用以輸运一研磨液至研磨墊上。而調節器係配置在研 磨墊之上方，用以調節研磨墊。其中，本發明之調節器係^ / 、 The middle polishing pad is arranged on the polishing table. The wafer carrier is arranged above the polishing pad, and it is generally used to hold a wafer so that the wafer can be polished on the polishing pad. The polishing liquid conveying pipe is arranged on the polishing pad ^ ′ to transport a polishing liquid to the polishing pad. The adjuster is arranged above the polishing pad to adjust the polishing pad. Among them, the regulator of the present invention is
544374 五、發明說明（4) 包括一調節盤、 其中，此調節盤 端係連接在調節 官件之另一端， 本發明之調節器 向壓氣體源，而 壓氣體源所提供 高壓氣體源所供 A例如是介於10 學機械研磨機台 磨墊時，係利用 體’以將研磨塾 研磨墊中的殘留 本發明之化 或高壓氣體以調 會發生堅硬顆粒 形0 ’南壓 在調節 源可以 提供之 是氣氣 體之壓 i之間。 圓，而 所喷出 凹凸不 台之調 此可避 而導致 源以及 輸出面 流體源 盤之該 是一高 一液體 。而且 力或一 因此 需以言周 高壓液 平的表 一管件、一高壓流體 具有一輸入面以及一544374 V. Description of the invention (4) Including a regulating disc, wherein the end of the regulating disc is connected to the other end of the regulating official part, the regulator of the present invention is directed to a pressure gas source, and the pressure gas source provided by the pressure gas source For example, when the polishing pad is between 10 mechanical polishing machines, the body is used to remove the residue of the present invention in the polishing pad or the high-pressure gas to regulate the formation of hard particles. 0 South pressure on the adjustment source can Provided is between the gas pressure i. Round, and the ejected unevenness can avoid the source and the output surface of the fluid source disk should be one high and one liquid. Moreover, the force or pressure must be expressed in terms of high pressure level, a tube, a high pressure fluid with an input surface and a
盤之輸入面上 而喷嘴是配置 中’高壓流體 高壓液體源所 之* 氣體例如 應之一高壓液 psi 至1〇〇 pS 在研磨數片晶 調節器之喷嘴 之表面恢復成 物。 學機械研磨機 郎研磨墊，因 掉洛研磨塾， 複數個喷嘴。 ’而管件之一 則是連接在該 輪出面上。在 壓液體源或一 例如是水，高 高壓液體源或 高壓氣體之壓 當本發明化 節器以調節研 體或高壓氣 面並刮除塞在 郎器係利用高壓液體 免習知之調節器可能 晶圓缺陷產生之情 j發學機械研磨機台之調節器非但可提高晶圓 之良率’而且此調節器之結構並不會太複雜。The input surface of the disk and the nozzle is the medium of the high-pressure fluid source. The gas, for example, should be a high-pressure liquid psi to 100 pS. The surface of the nozzle that grinds a few crystal regulators is restored. Learn about mechanical polishing machine Lang polishing pad, because of Luo Luo grinding 塾, a plurality of nozzles. ’One of the pipe fittings is connected to the wheel exit surface. The pressure of a liquid source or a pressure source such as water, a high-pressure liquid source, or a high-pressure gas when the present invention is used to adjust the research body or the high-pressure gas surface and scrape off the plug. The condition of the wafer defect. The adjuster of the mechanical polishing machine not only can improve the yield of the wafer ', but also the structure of the adjuster is not too complicated.
為讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂’下文特舉_較佳實施例，並配合所附圖式，作詳 細說明如下： ° 圖式之標不說明： 1 0 0 :研磨台In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the following exemplifies _ preferred embodiments, and in conjunction with the accompanying drawings, the detailed description is as follows: ° The symbols of the drawings do not indicate: 1 0 0: grinding table
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1 Ο 2 :研磨塾 1 〇 4 :晶圓載具 1 〇 6 :晶圓 1 0 8 :研磨液輸送管件 1 10、220 :調節器 1 1 2、2 0 0 :調節盤 1 1 4 :堅硬顆粒 2〇〇a :輸入面 2〇〇b :輸出面 202 喷嘴 204 管件 206 液體或氣體 210 高壓流體源 實施例1 〇 2: Grinding 塾 1 〇4: Wafer carrier 1 〇6: Wafer 1 0 8: Polishing liquid conveying pipe 1 10, 220: Adjuster 1 1 2, 2 0 0: Adjusting disk 1 1 4: Hard particles 200a: Input surface 200b: Output surface 202 Nozzle 204 Pipe fitting 206 Liquid or gas 210 High pressure fluid source embodiment
第3圖所示，其繪示為依照本發明一較佳實施例之一 化學機械研磨機台之上視簡圖·，第4圖是依照本發明一較 佳實施例之一化學機械研磨機台之側視簡圖。 請同時參照第3圖與第4圖，本發明之化學機械研磨機 台包括一研磨台100、一研磨墊102、一晶圓載具1〇4、一 研磨液輸送管件1 0 8 以及一調節器2 2 0。 ^其中，研磨墊102係舖在研磨台100上。晶圓載具1〇4 係用來抓住被研磨的晶圓1 0 6，以使晶圓丨〇 6能於研磨塾 102上進行研磨。其中，晶圓載具1〇4具有用以吸住晶圓 106之一真空孔洞（未繪示）以及用以支撐晶圓1〇6之一晶圓FIG. 3 is a schematic diagram showing a top view of a chemical mechanical polishing machine according to a preferred embodiment of the present invention, and FIG. 4 is a chemical mechanical polishing machine according to a preferred embodiment of the present invention. A simple side view of the platform. Please refer to FIG. 3 and FIG. 4 at the same time. The chemical mechanical polishing machine of the present invention includes a polishing table 100, a polishing pad 102, a wafer carrier 104, a polishing liquid conveying pipe 108, and a regulator. 2 2 0. ^ The polishing pad 102 is laid on the polishing table 100. The wafer carrier 104 is used to hold the polished wafer 106 so that the wafer 106 can be polished on the polishing wafer 102. The wafer carrier 104 has a vacuum hole (not shown) for holding a wafer 106 and a wafer for supporting a wafer 106.
^336twf.ptd^ 336twf.ptd
544374 五、發明說明（6) 邊緣壓覆環（Retaining Ring)(未繪示）等其他構件。另 外，研磨液輸送管件1 〇 8係配置在研磨墊1 〇 2之上方，其係 用來輸送一研磨液到研磨墊1〇2上。而調節器22〇是配置在 研磨墊102之上方，用以調節研磨塾1〇2，而將研磨墊1〇2 之表面恢復成凹凸不平的表面並刮除塞在研磨墊中的 殘留物。 第5圖與第6圖所示，其繪示為依照本發明一較佳實施 例之一化學機械研磨機台之調節器之示意圖。 請參照第4圖、第5圖與第6圖，在本發明之化學機械 研磨機台中，調節器220係包括一調節盤2〇〇、一管件 2一04、一咼壓流體源21〇以及複數個喷嘴2〇2(如第5圖所 示）。其中，調節盤20 0具有一輸入面2〇〇a以及一輸出面 第6圖所不），而且官件204之一端係連接在調節盤 2〇〇之輸入面200 a上。高壓流體源21〇則是連接在管件2〇4 之另一端。而喷嘴202是配置在調節盤2〇〇之輸出面⑼卟 上0 在本發明之調節器22〇中，高壓流體源21〇可以是一邊 f液體源或一高壓氣體源。其中，高壓液體源210所提供 =〇6例如是水或是其他任何適用之液體，而高壓 虱體源210所提伴夕— ，、之軋體206例如是氮氣或是其他任何楚 f # i2 ί，高壓液體源或高壓氣體源21 〇所供應之 之Η — \兩堅氣體206之一壓力例如是介於10 psi至10( 間’當本發明化學機械研磨機台在研磨數片 曰曰Η，而品以言周節器220以調節研磨塾1〇2時，係利用調節 544374 五、發明說明（7) 器2 2 0之喷嘴2 〇 2所喷出古阿、 磨塾102之表面恢復成凹Y液體或高壓氣體2〇6，以將研 102中的殘留物。換+之不平的表面並刮除塞在研磨墊 所提供之液體或氣體壓液體源或高壓氣體源210 後，便直接從喷嘴202噴、==件2 04而通入調節盤200之 塾1〇2上，因此藉由所噴，壓液體或高壓氣體於研磨 以將研磨墊1〇2之表面恢：：高壓液體或高壓液體206便可 研磨墊1〇2中的殘留物^设成凹凸不平的表面並刮除塞在 用堅5顆月κ之化學機械研磨機1台之調節器220並非使 用坚硬顆粒（鑽石顆私+ ‘ 7「^ 面，而是以高壓液體或古厂竟顆粒）來調節研磨塾1〇2之表 面。因此，本發明之二=體20 6來調節研磨塾102之表 102上，而使晶圓1〇1二有因堅硬顆粒掉落於研磨塾 研磨機台中利用本發3;;，二題。因此’在化Α機械 減少晶圓缺p的“ 調節研磨㈣调可以 ®缺的產i，進而提高晶圓之良率。 綜合以上所述’本發明具有下列優點： 體二y :之化學機械研磨機台之調節器係利用高壓液 ί i:ΐ 以凋郎研磨墊’因此可避免習知之調節器可 =會發生堅硬顆粒掉落研磨墊，而導致晶圓缺陷產生之情 2.本發明之化學機械研磨機台之調節器非但可提高晶 圓之良率，而且此調節器之結構並不會太複雜。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神544374 V. Description of the invention (6) Other components such as edge retaining ring (not shown). In addition, the polishing liquid conveying pipe 108 is arranged above the polishing pad 102, and is used to convey a polishing liquid to the polishing pad 102. The adjuster 22 is disposed above the polishing pad 102 to adjust the polishing pad 102. The surface of the polishing pad 102 is restored to an uneven surface and scrape off the residue stuck in the polishing pad. 5 and 6 are schematic diagrams showing a regulator of a chemical mechanical polishing machine according to a preferred embodiment of the present invention. Please refer to FIG. 4, FIG. 5, and FIG. 6. In the chemical mechanical polishing machine of the present invention, the regulator 220 includes a regulating disk 200, a tube 2 04, a pressure fluid source 21 0, and A plurality of nozzles 202 (as shown in Fig. 5). Among them, the adjusting disk 200 has an input surface 200a and an output surface (not shown in FIG. 6), and one end of the official part 204 is connected to the input surface 200a of the adjusting disk 200. A high-pressure fluid source 21o is connected to the other end of the pipe 204. The nozzle 202 is arranged on the output surface of the adjusting disk 200. In the adjusting device 22 of the present invention, the high-pressure fluid source 21 may be a side f liquid source or a high-pressure gas source. Among them, the high-pressure liquid source 210 provides water such as water or any other applicable liquid, and the high-pressure lice body source 210 provides a companion evening, and the rolling body 206 is, for example, nitrogen or any other fluid. # I2 ί, which is supplied by a high-pressure liquid source or a high-pressure gas source 21 〇 — \ The pressure of one of the two strong gases 206 is, for example, between 10 psi to 10 (between)而, and the word is used to adjust the grind 塾 102, the adjustment is 544374. 5. Description of the invention (7) The nozzle 2 〇2 of the device 2 2 sprays the surface of Gua and Mo 102 Recover into a concave Y liquid or high-pressure gas 206 to remove the residue in the research 102. Change to an uneven surface and scrape off the liquid or gas pressure liquid source or high-pressure gas source 210 provided in the polishing pad. It is sprayed directly from the nozzle 202, == 2 04 and is passed onto the 塾 102 of the adjusting disk 200. Therefore, the surface of the polishing pad 102 is restored by spraying, pressing liquid or high-pressure gas on the grinding: The high-pressure liquid or high-pressure liquid 206 can grind the residue in the pad 102 and set it as an uneven surface and scrape it. The regulator 220, which is a chemical mechanical grinder with a 5-month kappa, does not use hard particles (diamonds + 7 '^, but high-pressure liquid or ancient factory particles) to adjust the grinding 塾 1 〇2 surface. Therefore, the second of the present invention = body 20 6 to adjust the grinding table 102 on the table 102, so that the wafer 102 has hard particles falling on the grinding table grinding machine using the hair 3; , Second question. Therefore, 'reducing wafer defects in the chemical mechanical machinery' can adjust the grinding process to improve the yield of wafers, thereby improving the yield of wafers. In summary, the present invention has the following advantages: y: The regulator of the chemical mechanical polishing machine uses high-pressure liquid ί i: ΐ Wither polishing pad 'so you can avoid the conventional regulator can = hard particles will fall off the polishing pad, resulting in wafer defects Case 2. The conditioner of the chemical mechanical polishing machine of the present invention can not only improve the yield of the wafer, but also the structure of the conditioner is not too complicated. Although the present invention has been disclosed above in a preferred embodiment, it is not To limit the invention, anyone skilled in the art, in Departing from the spirit of the invention
544374 五、發明說明（8) 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。544374 5. In the description (8) and the scope of the invention, some modifications and retouching can be made. Therefore, the scope of protection of the present invention shall be determined by the scope of the attached patent application.
9^36twf ptd 第11頁 5443749 ^ 36twf ptd Page 11 544374
$)=疋習知一化學機械研磨機台之上視簡圖； 圖，習知一化學機械研磨機台之側視簡圖； •圖是依照本發明一較佳實施例之一化學機械研磨 機台之上視簡圖； 第4圖是依照本發明一較佳實施例之一化學機械研磨 機台之侧視簡圖； 第5圖是依照本發明一較佳實施例之一化學機械研磨 機台之調節器之示意圖；以及 第6圖是&照本發明一較佳實施例之一化學機械研磨 機台之調節器之示意圖。$) = 疋 A schematic view of the top of a known chemical mechanical polishing machine; Figure, a schematic side view of a known chemical mechanical polishing machine; The drawing is a chemical mechanical polishing according to a preferred embodiment of the present invention Top view of the machine; FIG. 4 is a side view of a chemical mechanical polishing machine according to a preferred embodiment of the present invention; FIG. 5 is a chemical mechanical polishing machine according to a preferred embodiment of the present invention A schematic diagram of the regulator of the machine; and FIG. 6 is a schematic diagram of the regulator of the chemical mechanical polishing machine according to one of the preferred embodiments of the present invention.
第12頁Page 12
Claims (1)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW091119090A TW544374B (en) | 2002-08-23 | 2002-08-23 | Conditioner of chemical-mechanical polishing station |
| US10/065,033 US20040038632A1 (en) | 2002-08-23 | 2002-09-12 | Conditioner of chemical-mechanical polishing station |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW091119090A TW544374B (en) | 2002-08-23 | 2002-08-23 | Conditioner of chemical-mechanical polishing station |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW544374B true TW544374B (en) | 2003-08-01 |
Family
ID=29708544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091119090A TW544374B (en) | 2002-08-23 | 2002-08-23 | Conditioner of chemical-mechanical polishing station |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20040038632A1 (en) |
| TW (1) | TW544374B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI615239B (en) * | 2017-03-20 | 2018-02-21 | 台灣積體電路製造股份有限公司 | Chemical mechanical polishing apparatus and chemical mechanical polishing process |
| TWI639486B (en) * | 2018-05-31 | 2018-11-01 | 國立清華大學 | Omni-directional integrated conditioner device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140323017A1 (en) * | 2013-04-24 | 2014-10-30 | Applied Materials, Inc. | Methods and apparatus using energized fluids to clean chemical mechanical planarization polishing pads |
| US10293462B2 (en) * | 2013-07-23 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad conditioner and method of reconditioning planarization pad |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3722591B2 (en) * | 1997-05-30 | 2005-11-30 | 株式会社日立製作所 | Polishing equipment |
| US6302771B1 (en) * | 1999-04-01 | 2001-10-16 | Philips Semiconductor, Inc. | CMP pad conditioner arrangement and method therefor |
| US6331136B1 (en) * | 2000-01-25 | 2001-12-18 | Koninklijke Philips Electronics N.V. (Kpenv) | CMP pad conditioner arrangement and method therefor |
| US6626743B1 (en) * | 2000-03-31 | 2003-09-30 | Lam Research Corporation | Method and apparatus for conditioning a polishing pad |
| US6409580B1 (en) * | 2001-03-26 | 2002-06-25 | Speedfam-Ipec Corporation | Rigid polishing pad conditioner for chemical mechanical polishing tool |
| US6508697B1 (en) * | 2001-07-16 | 2003-01-21 | Robert Lyle Benner | Polishing pad conditioning system |
-
2002
- 2002-08-23 TW TW091119090A patent/TW544374B/en not_active IP Right Cessation
- 2002-09-12 US US10/065,033 patent/US20040038632A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI615239B (en) * | 2017-03-20 | 2018-02-21 | 台灣積體電路製造股份有限公司 | Chemical mechanical polishing apparatus and chemical mechanical polishing process |
| TWI639486B (en) * | 2018-05-31 | 2018-11-01 | 國立清華大學 | Omni-directional integrated conditioner device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040038632A1 (en) | 2004-02-26 |
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