CN1245741C - Adjuster of desk of chemical mechanical grinding machine - Google Patents
Adjuster of desk of chemical mechanical grinding machine Download PDFInfo
- Publication number
- CN1245741C CN1245741C CN 02131867 CN02131867A CN1245741C CN 1245741 C CN1245741 C CN 1245741C CN 02131867 CN02131867 CN 02131867 CN 02131867 A CN02131867 A CN 02131867A CN 1245741 C CN1245741 C CN 1245741C
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- grinding
- grinding pad
- adjuster
- pipe fitting
- chemical
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to an adjuster of a grinding table of a chemical mechanical machine, which comprises an adjusting disk, a pipe member, a high pressure fluid source and a plurality of nozzles, wherein the adjusting disk is provided with an input face and an output face; one end of the pipe member is connected to the input face of the adjusting disk. The high pressure fluid source is connected with the other end of the pipe member; the nozzles are arranged on the output face of the adjusting disk.
Description
Technical field
The invention relates to a kind of cmp (Chemical MechanicalPolishing, the CMP) device of board, and particularly relevant for a kind of regulator in chemical and mechanical grinder bench (Conditioner).
Background technology
Chemical mechanical milling method is unique now a kind of technology that comprehensive planarization can be provided.And the principle of its planarization is to utilize this mechanical principle of similar sharpening, cooperates suitable chemical assistant (Reagent), and the profile that crystal column surface just rises and falls is polished.
Shown in Figure 1, it is the diagrammatic top view of a known work-table of chemicomechanical grinding mill; Shown in Figure 2, it is the diagrammatic side views of a known work-table of chemicomechanical grinding mill.
Please be simultaneously with reference to Fig. 1 and Fig. 2, a work-table of chemicomechanical grinding mill comprises a grinding table 100 (Polishing Table), a grinding pad (Polishing Pad) 102, one wafer carrier (WaferCartier) 104, lapping liquid conveying pipe fitting (Slurry Tube) 108 and one adjuster (Conditioner) 110.
Wherein, grinding pad 102 is layered on the grinding table 100.Wafer carrier 104 is configured in the top of grinding pad 102, and it is used for catching polished wafer 106, so that wafer 106 can grind on grinding pad 102.Lapping liquid carries pipe fitting 108 to be configured in the top of grinding pad 102, and it is used for carrying lapping liquid to grinding pad 102.And adjuster 110 is configured in the top of grinding pad 102, and the surface of adjuster 110 contact grinding pads 102 is embedded with many hard particles, for example is diamond grains (Diamond Grits) or ceramic particle, in order to regulate grinding pad 102 surfaces.
When carrying out cmp, grinding table 100 rotates along certain direction respectively with wafer carrier 104.And wafer carrier 104 is caught the back side of wafer 106, and the front of wafer 104 is pressed on the grinding pad 102.It is that lapping liquid is fed on the grinding pad 102 continuously that lapping liquid is carried 108 of pipe fittings.So, the cmp program is exactly when the part of the protrusion in wafer 106 fronts contacts with grinding pad 102, just can utilize the chemical assistant in the lapping liquid, produce chemical reaction with front at wafer 106, and grind with Aided Machine by the abrasive grains (Abrasive Particles) in the lapping liquid, and the part of the protrusion in removal wafer 106 fronts.Behind above-mentioned repeatedly chemical reaction and mechanical lapping, just can make the positive planarization of wafer 106.
Usually have many concaveconvex structures that help grind on the surface of grinding pad 102, so the surface of grinding pad 102 presents 1 micron to 2 microns degree of roughness.And generally work-table of chemicomechanical grinding mill is after grinding several pieces wafers, and original grinding pad 102 rough surfaces will become smooth, so that the grainding capacity of grinding pad 102 reduces.And after grinding, the material that is ground away from the wafer 106 also may remain on the grinding pad 102, will make that so abrasive characteristic changes to some extent, and then the influence effect of grinding.Therefore, after grinding several pieces wafers, all can utilize adjuster 110 to regulate grinding pad 102 usually,, and strike off the residue of plug in grinding pad 102 simultaneously so that the surface recovery of grinding pad 102 becomes rough surface.
And known regulator in chemical and mechanical grinder bench 110 is made of an adjustment disk 112 and the hard particles 114 (for example being diamond grains or ceramic particle) that is embedded on the adjusting range of adjustment disk 112.Yet, if when the hard particles 114 on the adjuster 110 falls on the grinding pad 102 because of any possible factor, the hard particles injury that wafer 106 is fallen down in process of lapping, and on wafer 106, produce defective.
Summary of the invention
Therefore, purpose of the present invention is providing a kind of regulator in chemical and mechanical grinder bench exactly, and hard particles may take place fall to grinding pad to solve known adjuster, and the situation that causes wafer defect to produce.
The present invention proposes a kind of regulator in chemical and mechanical grinder bench, and it comprises an adjustment disk, a pipe fitting, a high-pressure fluid source and a plurality of nozzle.Wherein, this adjustment disk has an input face and an output face.And an end of pipe fitting is connected on the input face of adjustment disk, and high-pressure fluid source system is connected the other end of pipe fitting.In addition, nozzle then is to be configured in the output face of adjustment disk.In the present invention, high-pressure fluid source can be a high pressure liquid source or a high pressurized gas, and the liquid that high pressure liquid source provided for example is water, and the gas that high pressurized gas provided for example is nitrogen.And the pressure of the highly pressurised liquid supplied of high pressure liquid source or high pressurized gas or the pressure of gases at high pressure for example are between between the 10psi to 100psi.Therefore, when utilizing adjuster of the present invention, be highly pressurised liquid that nozzle sprays or the gases at high pressure that utilize adjuster with the adjusting grinding pad, become rough surface and strike off the residue of plug in grinding pad with surface recovery grinding pad.
The present invention proposes a kind of work-table of chemicomechanical grinding mill, and it comprises a grinding table, a grinding pad, a wafer carrier, lapping liquid conveying pipe fitting and an adjuster.Wherein, grinding pad is configured on the grinding table.Wafer carrier is configured in the top of grinding pad, and it is used for catching a wafer so that wafer can grind on grinding pad.Lapping liquid conveying pipe fitting is configured in the top of grinding pad, in order to carry a lapping liquid to grinding pad.And regulator configuration is above grinding pad, in order to regulate grinding pad.Wherein, adjuster of the present invention comprises an adjustment disk, a pipe fitting, a high-pressure fluid source and a plurality of nozzle.Wherein, this adjustment disk has an input face and an output face, and an end of pipe fitting is connected on the input face of adjustment disk, and high-pressure fluid source then is the other end that is connected this pipe fitting, and nozzle is to be configured in this output face of adjustment disk.In adjuster of the present invention, high-pressure fluid source can be a high pressure liquid source or a high pressurized gas, and the liquid that high pressure liquid source provided for example is water, and the gas that high pressurized gas provided for example is nitrogen.And the pressure of the highly pressurised liquid supplied of high pressure liquid source or high pressurized gas or the pressure of gases at high pressure for example are between between the 10psi to 100psi.Therefore, when work-table of chemicomechanical grinding mill of the present invention is grinding several pieces wafers, and need with adjuster when regulating grinding pad, be highly pressurised liquid that nozzle sprays or the gases at high pressure that utilize adjuster, become rough surface and strike off the residue of plug in grinding pad with surface recovery grinding pad.
Regulator in chemical and mechanical grinder bench of the present invention utilizes highly pressurised liquid or gases at high pressure to regulate grinding pad, therefore can avoid known adjuster that the hard particles grinding pad that drops may take place, and the situation that causes wafer defect to produce.
Not only regulator in chemical and mechanical grinder bench of the present invention can improve the qualification rate of wafer, and the structure of this adjuster can't be too complicated.
Description of drawings
Fig. 1 is the diagrammatic top view of a known work-table of chemicomechanical grinding mill;
Fig. 2 is the diagrammatic side views of a known work-table of chemicomechanical grinding mill;
Fig. 3 is the diagrammatic top view according to a work-table of chemicomechanical grinding mill of a preferred embodiment of the present invention;
Fig. 4 is the diagrammatic side views according to a work-table of chemicomechanical grinding mill of a preferred embodiment of the present invention;
Fig. 5 is the schematic diagram according to a regulator in chemical and mechanical grinder bench of a preferred embodiment of the present invention; And
Fig. 6 is the schematic diagram according to a regulator in chemical and mechanical grinder bench of a preferred embodiment of the present invention.
100: grinding table
102: grinding pad
104: wafer carrier
106: wafer
108: lapping liquid is carried pipe fitting
110,220: adjuster
112,200: adjustment disk
114: hard particles
200a: input face
200b: output face
202: nozzle
204: pipe fitting
206: liquid or gas
210: high-pressure fluid source
Embodiment
Shown in Figure 3, it is the diagrammatic top view according to a work-table of chemicomechanical grinding mill of a preferred embodiment of the present invention; Fig. 4 is the diagrammatic side views according to a work-table of chemicomechanical grinding mill of a preferred embodiment of the present invention.
Please be simultaneously with reference to Fig. 3 and Fig. 4, work-table of chemicomechanical grinding mill of the present invention comprises a grinding table 100, a grinding pad 102, a wafer carrier 104, lapping liquid conveying pipe fitting 108 and an adjuster 220.
Wherein, grinding pad 102 is layered on the grinding table 100.Wafer carrier 104 is used for catching polished wafer 106, so that wafer 106 can grind on grinding pad 102.Wherein, wafer carrier 104 has in order to the vacuum hole (not illustrating) that holds wafer 106 and covers ring (Retaining Ring) (not illustrating) in order to a crystal round fringes of supporting wafer 106 and waits other member.In addition, lapping liquid carries pipe fitting 108 to be configured in the top of grinding pad 102, and it is used for carrying a lapping liquid to grinding pad 102.And adjuster 220 is the tops that are configured in grinding pad 102, in order to adjusting grinding pad 102, and the surface recovery of grinding pad 102 is become rough surface and strikes off the residue of plug in grinding pad 102.
Fig. 5 and shown in Figure 6, it is the schematic diagram according to a regulator in chemical and mechanical grinder bench of a preferred embodiment of the present invention.
Please refer to Fig. 4, Fig. 5 and Fig. 6, in work-table of chemicomechanical grinding mill of the present invention, adjuster 220 comprises an adjustment disk 200, a pipe fitting 204, a high-pressure fluid source 210 and a plurality of nozzle 202 (as shown in Figure 5).Wherein, adjustment disk 200 has an input face 200a and an output face 200b (as shown in Figure 6), and an end of pipe fitting 204 is connected on the input face 200a of adjustment disk 200.210 of high-pressure fluid source are the other ends that is connected pipe fitting 204.And nozzle 202 is to be configured on the output face 200b of adjustment disk 200.
In adjuster 220 of the present invention, high-pressure fluid source 210 can be a high pressure liquid source or a high pressurized gas.Wherein, the liquid 206 that high pressure liquid source 210 is provided for example is water or other any suitable liquid, and the gas 206 that high pressurized gas 210 is provided for example is nitrogen or other any suitable gas.And highly pressurised liquid that high pressure liquid source or high pressurized gas 210 are supplied or a pressure of gases at high pressure 206 for example are between between the 10psi to 100psi.Therefore, when work-table of chemicomechanical grinding mill of the present invention is grinding several pieces wafers, and need with adjuster 220 when regulating grinding pad 102, utilize adjuster 220 nozzle 202 spray highly pressurised liquid or gases at high pressure 206, become rough surface and strike off the residue of plug in grinding pad 102 with surface recovery grinding pad 102.In other words, by high pressure liquid source or liquid that high pressurized gas 210 provided or gas 206 and after feeding adjustment disk 200 through pipe fittings 204, just directly from nozzle 202 ejection highly pressurised liquids or gases at high pressure 206 on grinding pad 102, therefore highly pressurised liquid or the highly pressurised liquid 206 that passes through to be sprayed just can become the surface recovery of grinding pad 102 rough surface and strike off the residue of plug in grinding pad 102.
Because regulator in chemical and mechanical grinder bench 220 of the present invention is not to use hard particles (diamond grains or ceramic particle) to regulate the surface of grinding pad 102, but regulates the surface of grinding pad 102 with highly pressurised liquid or gases at high pressure 206.Therefore, method of the present invention does not have because of hard particles drops on grinding pad 102, and the problem that wafer 106 is damaged.Therefore, in work-table of chemicomechanical grinding mill, utilize adjuster 220 of the present invention to grind the generation that 102 pads can reduce wafer defect, and then improve the qualification rate of wafer to regulate.
Comprehensive the above, the present invention has following advantages:
1. the adjuster of work-table of chemicomechanical grinding mill of the present invention utilizes highly pressurised liquid or high pressure gas Therefore body can be avoided known adjuster that hard particles may take place and drop to regulate grinding pad Grinding pad, and the situation that causes wafer defect to produce.
2. not only the adjuster of work-table of chemicomechanical grinding mill of the present invention can improve the qualified of wafer Rate, and the structure of this adjuster can't be too complicated.
Claims (14)
1. a regulator in chemical and mechanical grinder bench is characterized in that, this adjuster comprises:
One adjustment disk, this adjustment disk have an input face and an output face;
One pipe fitting, an end of this pipe fitting are connected on this input face of this adjustment disk;
One high-pressure fluid source is connected the other end of this pipe fitting; And
A plurality of nozzles are configured in this output face of this adjustment disk.
2. regulator in chemical and mechanical grinder bench as claimed in claim 1 is characterized in that, this high-pressure fluid source is a high pressure liquid source.
3. regulator in chemical and mechanical grinder bench as claimed in claim 2 is characterized in that the liquid that this high pressure liquid source provided comprises water.
4. add right and require 2 described regulator in chemical and mechanical grinder bench, it is characterized in that, the fluid pressure that this high pressure liquid source is supplied is 10psi to 100psi.
5. regulator in chemical and mechanical grinder bench as claimed in claim 1 is characterized in that, this high-pressure fluid source is a high pressurized gas.
6. regulator in chemical and mechanical grinder bench as claimed in claim 5 is characterized in that the gas that this high pressurized gas provided comprises nitrogen.
7. regulator in chemical and mechanical grinder bench as claimed in claim 5 is characterized in that, the gas pressure that this high pressurized gas is supplied is 10psi to 100psi.
8. a work-table of chemicomechanical grinding mill is characterized in that, this board comprises:
One grinding table;
One grinding pad is configured on this grinding table;
One wafer carrier is configured in the top of this grinding pad, and this carrier catches a wafer that this wafer can be ground on this grinding pad;
One lapping liquid is carried pipe fitting, is configured in the top of this grinding pad, and this pipe fitting carries a lapping liquid to this grinding pad; And
One adjuster is configured in the top of this grinding pad, and this adjuster is regulated this grinding pad, and wherein this adjuster comprises:
One adjustment disk, this adjustment disk have an input face and an output face;
One pipe fitting, an end of this pipe fitting are connected on this input face of this adjustment disk;
One high-pressure fluid source is connected the other end of this pipe fitting; And
A plurality of nozzles are configured in this output face of this adjustment disk.
9. work-table of chemicomechanical grinding mill as claimed in claim 8 is characterized in that, this high-pressure fluid source is a high pressure liquid source.
10. work-table of chemicomechanical grinding mill as claimed in claim 9 is characterized in that the liquid that this high pressure liquid source provided comprises water.
11. work-table of chemicomechanical grinding mill as claimed in claim 9 is characterized in that, the fluid pressure that this high pressure liquid source is supplied is 10psi to 100psi.
12. work-table of chemicomechanical grinding mill as claimed in claim 8 is characterized in that, this high-pressure fluid source is a high pressurized gas.
13. work-table of chemicomechanical grinding mill as claimed in claim 12 is characterized in that, the gas that this high pressurized gas provided comprises nitrogen.
14. work-table of chemicomechanical grinding mill as claimed in claim 12, wherein the gas pressure supplied of this high pressurized gas is 10psi to 100psi.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02131867 CN1245741C (en) | 2002-09-04 | 2002-09-04 | Adjuster of desk of chemical mechanical grinding machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02131867 CN1245741C (en) | 2002-09-04 | 2002-09-04 | Adjuster of desk of chemical mechanical grinding machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1480989A CN1480989A (en) | 2004-03-10 |
| CN1245741C true CN1245741C (en) | 2006-03-15 |
Family
ID=34145056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02131867 Expired - Fee Related CN1245741C (en) | 2002-09-04 | 2002-09-04 | Adjuster of desk of chemical mechanical grinding machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1245741C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101451962B (en) * | 2008-12-25 | 2011-03-16 | 北大方正集团有限公司 | Wafer and method for verifying defect scanning machine |
| CN110233115B (en) * | 2019-05-29 | 2020-09-08 | 宁波芯健半导体有限公司 | Wafer-level chip packaging method and packaging structure |
-
2002
- 2002-09-04 CN CN 02131867 patent/CN1245741C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1480989A (en) | 2004-03-10 |
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| PB01 | Publication | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060315 Termination date: 20190904 |
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| CF01 | Termination of patent right due to non-payment of annual fee |