TWI230644B - High-pressure polishing equipment - Google Patents

Abstract

The present invention discloses a high-pressure polishing equipment, which utilizes a sorting machine having high-pressure spraying nozzle to inject a solution for proceeding a conditioning process onto the polishing pad. The damage on wafer surface and the consumption of diamond sorting machine in the traditional process, which are caused by applying a larger force on the diamond sorting machine to secure a good state of the polishing pad, can be prevented. Also, the present invention can be realized by matching with the design of conventional manufacturing machines to be more practically convenient.

Description

1230644 t 921374 ^

V. Description of the invention (1) [Technical field of Xu Ming] The present invention relates to a grinder a grinder capable of grinding a kind of high-pressure grinding in a grinding mill = avoiding the use of diamonds in the conventional manufacturing process; ground removal And [prior art] The resulting wafer damage. When the semiconductor VLSI process technology becomes more and more area, the transistor can be made = = = "upper unit area, lithography or two :: continuous processes such as thin film mechanical polishing technology: increased etching difficulty. The chemical machine is ca—ca1 Poll Shlng, ⑽, OK. B said that the mouth surface has been comprehensively flattened to facilitate the subsequent process. In the manufacturing process, the surface is roughened with abrasive particles covered with abrasive particles. With the aid of chemical additives, the wafer surface is double-added by J-mechanical polishing, etc. to perform wafer surface: = treatment ', but when used for a long time, it will cause the polishing pad surface to flow. The path to the surface of the wafer (cha η ne 1) and the ability to grasp the abrasive particles are reduced. To solve this problem in the conventional process, a so-called adjustment is performed on the surface of the polishing pad before the next wafer is subjected to surface polishing. A chemical process (CondltiOning), which uses a diamond disk to perform a mechanical abrading on the polishing pad, so that the polished silicon dioxide is removed from the polishing pad. The point is that diamond is a brittle material. If you want to get a good removal ability, you must use the great force of the driver (D 0 w n F 〇 r c e) and the sharper diamond.

Page 5 1230644 _Case No. 92137442_Date___ V. Description of the invention (2) It is easy to cause the diamond to break or fall off, which will cause serious scratches on the wafer, increase the cost, and other undesirable results. Therefore, the present invention addresses the above-mentioned problems and proposes a high-pressure grinding tool, which can not only easily remove the material such as silicon dioxide deposited in the grinding pad, but also does not have a better quality like a traditional diamond grinding disc because of the need. The removal ability causes the diamond to break or fall off, which reduces the possibility of the wafer being scratched in this process and prolongs the use of the diamond grinding disc. SUMMARY OF THE INVENTION The main object of the present invention is to provide a high-pressure polishing appliance which can achieve the purpose of removing the material deposited in the polishing pad. Another object of the present invention is to provide a high-pressure grinding device, which can avoid the diamonds on the diamond grinding disc from being broken or peeled off due to the good removal ability in the conventional manufacturing process. Yet another object of the present invention is to provide a high-pressure grinding tool, which can reduce the chance of scratching the wafer surface due to the fracture of the diamond on the diamond grinding disc. Yet another object of the present invention is to provide a high-pressure grinding appliance which can prolong the service life of a diamond grinding disc. Another object of the present invention is to provide a high-pressure grinding tool which can be implemented in accordance with a conventional process machine design, and can further provide convenience in implementation. The invention is a high-pressure grinding appliance, which comprises a grinding platform with a grinding pad; a grinding liquid supplier located on the grinding platform for supplying a grinding liquid to the grinding pad; Spin

Page 6 1230644 Case No. 92137442 _η Revision V. Description of the Invention (3) A wafer carrier is used to hold and rotate one side of the wafer carrier to contact the polishing liquid and the polishing pad so as to access a polishing platform located on the polishing platform. The finisher is provided with a plurality of symmetrically arranged high pressure nozzles which can be interposed with the polishing pad, and is used to finish polishing the wafer to produce a solution for surface adjustment of the polishing pad. In order to further your understanding and understanding of the effectiveness of the present invention, we would like to provide detailed explanations as follows: [Embodiment] The present invention can be widely applied to the manufacture of semiconductor mechanical chemical The flattening process after the process. When the present invention is an invention, those who are familiar with this field should recognize the changes, such as the operation mode of the finisher, the type of medicine at the nozzle angle, etc., which can be replaced. Spirit and scope. As shown in the first figure, it is a polishing platform 10 according to the present invention, and a finisher 16 for rotating a wafer carrier rotating above the polishing platform 10 and above the polishing platform 10, wherein the polishing platform 10 is on And chemical auxiliary polishing pad 18, the polishing liquid is supplied to the polishing pad, and the function of rotating the wafer carrier 14 is attached to the bottom thereof, so that the wafer 20 to be polished on the surface wafer 'and the wafer table Chemical mechanical polishing; after changing from 90 ° to 5 ° from the angle of the opposite surface of the polishing pad, the high pressure nozzle spray structure and the CMP process in the preparation process are performed according to the preferred embodiment diagram and the achieved work. Many different preferred embodiments are used to illustrate that the present invention can be changed, the nozzle type or the chemical replacement is undoubtedly not detached from the schematic diagram, which includes a grinding fluid supplier 1 2 and 1 4 and a movable up and down and It is provided with a polishing granulator 1 2 that supplies a polishing liquid to suck wafer 2 0 toward the polishing pad 18 and makes

Page 7 1230644 Case No. 92137442 Λ_ Revision V. Description of the Invention (4) Wafer surface 20 is in contact with the polishing liquid and polishing pad 18 for chemical mechanical polishing. The finisher 16 is opposite to the polishing pad 18 There are several high-pressure nozzles 22 that are symmetrical and can be adjusted at an angle of 90 ° to 5 °. The top view is shown in the first (a) diagram. It is used to complete the grinding of the wafer 20, and The nozzle 22 sprays a pure water or chemical solution to remove the residues attached to the surface of the polishing pad 18, so-called conditioning (c ο nditi ο ning), and the angle of the nozzle 22 and the angle at which it sprays the solution The pressure setting can be adjusted as the process requires. When the present invention is used to perform a chemical mechanical polishing process on a wafer, as shown in the schematic diagram of the polishing process in the second figure, the wafer is first grasped by the rotating wafer carrier 14 from the back, with its front facing the polishing pad 18, for proper polishing. The liquid is injected from the polishing liquid supplier 12 between the polishing pad 18 and the wafer surface, and the rotating wafer carrier 14 is used to press the wafer against the polishing pad 18 to rotate in a certain direction (as shown in the figure). An arrow indicates the direction of movement) and the action of the polishing liquid and the wafer surface to perform polishing, so that the dual processing operations such as chemical reaction and mechanical polishing are performed simultaneously. After a period of use, the polishing pad 1 8 The surface will be smoothed (g 1 azing), so that the channel of the polishing liquid to the wafer surface (channel) and the ability to grasp the polishing particles are reduced. Therefore, before the next polishing, the polishing pad 1 8 for surface adjustment, the finisher 16 will rotate on the surface of the polishing pad 1 8 in a certain direction and move left and right (the movement mode is indicated by an arrow in the figure), and high-pressure nozzles 22 will spray pure water or chemical The solution restores the polishing pad 20 to the surface state before grinding. The high-pressure nozzle 22 can change the angle between 5 ° and 90 °. Therefore, the angle of the liquid being sprayed can be adjusted according to the needs of the process. Make appropriate changes with intensity.

1230644 _Case No. 92137442_ Year Month Date__ V. Description of the Invention (5) Of course, the present invention can be used for the design of a machine using the diamond finisher 24, which is based on the conventional machine and then adds a finisher. 22 As shown in the third figure, under this design, it is not necessary to apply a larger stress to obtain better removal results as in the case of the conventional process, thereby extending the life of the diamond grinding wheel. In this machine design, the finisher 16 can also be configured with the diamond finisher 24, as shown in the fourth figure. At this time, the finisher 16 is moved in the same way as the diamond finisher 24, or The finisher 16 can also be designed to be attached to the polishing liquid supplier 12 as shown in the fifth figure. In this case, the finisher 16 and the polishing liquid supplier 12 will move in a left-right manner. . To sum up, the present invention is a high-pressure polishing appliance, which uses a finisher to adjust the surface of the polishing pad, which can easily remove impurities deposited in the polishing pad, and avoids the diamond in the conventional manufacturing process. Breaking and scratching the wafer. However, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of this creative implementation. Therefore, for example, the equal changes and changes in shape, structure, characteristics and spirit described in the scope of the patent application for the present invention and Modifications should be included in the scope of patent application of the present invention. [Comparison of drawing number] 1 0 polishing platform 1 2 polishing liquid supplier 1 4 rotating wafer carrier 1 6 finisher 1 8 polishing pad

1230644 Case No. 92137442 _η Revision V. Description of the invention (6) 2 0 wafer 2 2 high-pressure nozzle 2 4 diamond finishing device

Page 10 1230644 _Case No. 92137442_Year Month__ Brief description of the drawings The first picture is a schematic diagram of the device of the present invention. The first (a) is a top view of the nozzle configuration design of the finisher. The second figure is a schematic diagram of a preferred embodiment of the present invention. The third diagram is a schematic diagram of a preferred embodiment of the present invention applied to a conventional diamond grinding machine. The fourth figure is a schematic diagram of a preferred embodiment when the present invention is applied to a conventional diamond grinding machine equipped with a finisher and a diamond finisher. The fifth diagram is a schematic diagram of a preferred embodiment when the present invention is applied to a conventional diamond grinding machine and a finisher and a polishing liquid supplier are arranged together.

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Claims (1)

1230644 _Case No. 92137442_Year Month__ VI. Patent Application Range 1 · A high-pressure grinding appliance, which includes: a grinding platform with a grinding pad attached to it; a grinding fluid supplier located at the grinding platform A rotary wafer carrier, which is located on the polishing platform, is used to hold and rotate a wafer, and make the wafer surface and the polishing liquid and the polishing pad Contacting for chemical mechanical polishing; and a finisher, located on the polishing platform, with a number of symmetrical arrangements on the opposite side of the polishing pad and capable of changing the angle between the polishing pad and the polishing pad by 90 ° to 5 ° The nozzle is used for spraying a solution from the high-pressure nozzle to adjust the surface of the polishing pad after the wafer is polished. 2 · The high-pressure grinding appliance according to item 1 of the scope of patent application, wherein the solution may be pure water. 3. The high-pressure grinding appliance according to item 1 of the scope of patent application, wherein the finisher can be moved up, down, left and right. 4 · The high-pressure grinding appliance according to item 1 of the patent application scope, wherein the finisher is rotatable. 5. The high-pressure grinding appliance according to item 1 of the scope of patent application, wherein the finisher can be matched with a diamond finisher. 6. The high-pressure grinding appliance according to item 5 of the scope of the patent application, wherein the finisher can be configured with the grinding liquid supplier. 7. The high-pressure grinding appliance as described in item 5 of the patent application scope, wherein the finisher can be configured with the diamond finisher. Page 12