WO2014172971A1 - 窄边框显示装置及其制备方法 - Google Patents

窄边框显示装置及其制备方法 Download PDF

Info

Publication number
WO2014172971A1
WO2014172971A1 PCT/CN2013/077358 CN2013077358W WO2014172971A1 WO 2014172971 A1 WO2014172971 A1 WO 2014172971A1 CN 2013077358 W CN2013077358 W CN 2013077358W WO 2014172971 A1 WO2014172971 A1 WO 2014172971A1
Authority
WO
WIPO (PCT)
Prior art keywords
common electrode
display device
sealant
frame
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2013/077358
Other languages
English (en)
French (fr)
Inventor
周波
刘晓那
宋勇志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Beijing BOE Display Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US14/235,975 priority Critical patent/US20140333881A1/en
Publication of WO2014172971A1 publication Critical patent/WO2014172971A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells

Definitions

  • Narrow bezel display device and preparation method thereof Narrow bezel display device and preparation method thereof
  • Embodiments of the present invention relate to a narrow bezel display device and a method of fabricating the same. Background technique
  • narrow bezel technology has been widely used in the field of liquid crystal displays, and various manufacturers have also launched their own narrow bezel products. As the frame is narrowed, the visible area of the liquid crystal display increases, and the display effect is better.
  • Figure 1 (a), (b) are a front view and a partial cross-sectional view of a conventional display panel non-narrow bezel design, respectively
  • Figure 2 (a), (b) are front view of the existing display panel narrow bezel design and Partial section view.
  • the narrow bezel technology requires the sealant 1 to overlap with a portion of the black matrix (BM) 3 on the color filter substrate 2 and a portion of the common electrode 5 on the TFT substrate 4 to reduce the periphery of the panel.
  • the occupation of space the purpose of achieving a narrow border.
  • the BM3 is opaque, and since the common electrode 5 is usually made of a material such as metal Cu, A1 or its alloy, it is also opaque. Therefore, when the above three portions overlap, the BM3 and the common electrode 5 are caused. It is difficult to achieve UV curing of the sealant 1.
  • a plurality of juxtaposed slits 6, such as etched slits 6, are now provided by overlapping the frame sealant 1 on the BM3 or the common electrode 5.
  • ultraviolet light can be irradiated onto the sealant 1 from the slit 6 to effect ultraviolet light curing.
  • the ultraviolet light is irradiated from the side of the color filter substrate 2 through the etched slit 6 on the BM3 to irradiate the sealant 1;
  • the ultraviolet light is irradiated from the TFT substrate 4 side through the common electrode 5 to etch the slit 6 to irradiate the sealant 1.
  • the ultraviolet light cannot pass, and the sealant 1 corresponding to the position of the unetched slit 6 cannot be completely cured. Therefore, when the ultraviolet light intensity is constant, the ultraviolet curing time of the sealant 1 will be prolonged, and the curing efficiency is low.
  • a first transparent electrode layer is formed on the substrate, and then a gate is formed And a gate insulating layer; then sequentially forming a semiconductor layer including a source and a drain, a passivation insulating layer, forming a via hole in the passivation insulating layer, and finally forming a second transparent electrode layer.
  • the common electrode is made of a material such as metal Cu, A1 or an alloy thereof, and is the same as the material used for the gate electrode, it is an opaque material, and thus the common electrode and the gate electrode are simultaneously formed.
  • the embodiment of the invention provides a narrow bezel display device and a preparation method thereof, which can solve the problems of long ultraviolet curing time and low curing efficiency of the existing sealant.
  • An aspect of the present invention provides a narrow bezel display device, including: an upper substrate, a lower substrate, a liquid crystal layer filled between the upper substrate and the lower substrate, and disposed on edges of the upper substrate and the lower substrate a sealant; a common electrode at a position overlapping the sealant in the display device is a transparent common electrode.
  • the common electrodes at positions corresponding to the respective frames of the display device and overlapping with the sealant are transparent common electrodes.
  • the transparent common electrode is made of a transparent conductive material.
  • the transparent conductive material is indium tin oxide, indium oxide or oxidized.
  • the thickness of the common electrode at the position overlapping the sealant is set to 400 to 1500.
  • Another aspect of the present invention provides a method for fabricating a narrow bezel display device, including: disposing an upper and a lower substrate of the display device, and performing oppositely disposed upper and lower substrates on the display device, A liquid crystal layer is disposed between the upper and lower substrates, and a sealant is disposed on the edges of the upper and lower substrates. The method further includes: forming a common electrode at a position overlapping the sealant, and selecting a transparent conductive material at a common electrode at a position overlapping the sealant.
  • a common electrode at a position overlapping the sealant is formed while forming the first transparent electrode layer of the display device.
  • the transparent conductive material selected from the common electrode at the position where the sealant is overlapped is the same as the material of the first transparent electrode layer.
  • the first transparent electrode layer and the common electrode at the position overlapping with the sealant are formed by: depositing a transparent conductive material on the substrate, and forming a first transparent electrode layer by the patterning process; The common electrode at the location where it overlaps the sealant.
  • the transparent conductive material is deposited at a temperature ranging from room temperature to 230 degrees.
  • the common electrode at the non-overlapping position of the sealant and the common electrode at the position where the sealant overlaps are connected by overlapping.
  • Figure 1 (a) is a front view of a conventional display panel non-narrow bezel design
  • Figure 1 (b) is a partial cross-sectional view of a conventional display panel non-narrow bezel design
  • Figure 2 (a) is a front view of a conventional narrow design of the display panel
  • Figure 2 (b) is a partial cross-sectional view of a conventional narrow design of the display panel
  • Figure 3 (a) is a plan view showing a portion of a color film substrate in which a slit is disposed at a position where the BM and the sealant 1 overlap;
  • Figure 3 (b) is a plan view showing a portion of a TFT substrate in which a slit is provided at a position where the common electrode and the sealant 1 overlap;
  • FIG. 4 is a schematic plan view showing a planar structure of a narrow bezel display panel according to an embodiment of the present invention.
  • FIG. 5 is a partial cross-sectional view showing a design of a narrow bezel display panel according to an embodiment of the present invention.
  • An embodiment of the present invention provides a narrow bezel display device, the display device including: an upper substrate, a lower substrate, a liquid crystal layer filled between the upper substrate and the lower substrate, and the upper substrate and a frame sealant at the edge of the lower substrate; in this embodiment, the common electrode at the position overlapping the sealant in the display device is disposed as a transparent conductive material to form a transparent common electrode, so that ultraviolet light can be transmitted through the common electrode to completely Irradiation to the frame sealant to achieve rapid curing of the sealant and improve the efficiency of UV curing.
  • FIG. 4 is a schematic plan view showing a plan view of a narrow bezel display panel according to an embodiment of the present invention
  • FIG. 5 is a partial cross-sectional view along the line A-A of the design of the narrow bezel display panel of the embodiment of the present invention, showing the common electrode.
  • the narrow bezel display panel of the present embodiment includes an array substrate 4, a color filter substrate 2, and a periphery of the array substrate 4 and the color filter substrate 2 to combine the two to form a liquid crystal cell.
  • the liquid crystal cell is filled with a liquid crystal material.
  • the black matrix 3 and the common electrode 51 may overlap with the sealant 1.
  • the array substrate 4 and the color filter substrate 2 are examples of the lower substrate and the upper substrate, respectively. For example, when a color film structure is formed on the array substrate 4 as a lower substrate, the upper substrate need not include a color film structure.
  • the liquid crystal display panel can be a horizontal electric field mode or a vertical electric field mode.
  • the horizontal electric field mode can be a fringe field switch (FFS) mode or an in-plane switching (IPS) mode;
  • the vertical electric field mode can be a twisted nematic (TN) mode or a vertical alignment (VA) mode.
  • the effective display area of the array substrate is formed with two transparent electrodes, a common transparent electrode (Vcom) and a pixel transparent electrode, which are used to form a horizontal electric field; for the TN mode, the array substrate is effective.
  • the display area may also be formed with two transparent electrodes, which are respectively a storage transparent electrode and a pixel transparent electrode.
  • the array substrate further includes a common electrode wiring in the non-display area (peripheral area), and these common electrodes overlap with the sealant.
  • the common electrode of the non-display area can be connected, for example, to a common electrode in the effective display area. As shown in FIG.
  • the common electrode 51 at the position overlapping with the sealant 1 is made of a transparent conductive material, and the transparent conductive material may be selected from indium tin oxide (ITO), indium oxide (IZO), and oxidized. Materials such as (ZnO).
  • ITO indium tin oxide
  • IZO indium oxide
  • ZnO zinc oxide
  • the common electrode 51 overlapping the adjacent frame (right and lower bezel) of the display device and overlapping with the sealant 1 is provided as a transparent conductive material.
  • the common electrode 51 (the common electrode indicated by the left and upper frames in FIG. 4) corresponding to the position of the other two frames of the display device and overlapping with the sealant 1 may be set as a transparent conductive material. production.
  • the upper and left frame portions of the display device shown in Fig. 4 may be provided as a transparent conductive material with the common electrode 51 overlapping the sealant 1.
  • the transparent common electrode formed of the transparent conductive material may have a thickness of 400 to 150 ⁇ . Accordingly, the slits may or may not be provided in the portion of the black matrix 3 overlapping the sealant 1.
  • the common electrode 51 at the position overlapping with the sealant 1 is provided as a transparent conductive material, only ultraviolet light is irradiated from the side of the TFT substrate 4 when the ultraviolet light of the sealant 1 is cured. That is, the ultraviolet light can be completely irradiated onto the sealant 1 through the transparent common electrode 51, which is different from the conventional ultraviolet light irradiated onto the sealant 1 as shown in FIG. Therefore, the embodiment can realize fast and complete curing of the frame sealant 1 and improve the curing efficiency.
  • the display device may be an ADS type, an in-plane switch (IPS) type, a surface switch (PLS) type, or the like, an FFS type, a TN type, or the like.
  • IPS in-plane switch
  • PLS surface switch
  • the method includes the following steps 501 ⁇ 504:
  • Step 501 Form a first transparent electrode layer on the substrate and a common electrode at a position overlapping the sealant.
  • the common electrode formed in this step is light transmissive, the same transparent conductive material as that used for the first transparent electrode layer can be used, and thus can be formed simultaneously with the first transparent electrode layer.
  • the transparent conductive material may be ITO, IZO or ZnO or the like.
  • the resistance of the transparent conductive material can be reduced, for example, by lowering the deposition temperature of the ITO, and the deposition temperature can be lowered from 230 degrees to room temperature (25 ° C);
  • the transparent electrode material with lower resistivity can be replaced, and the resistivity of ZnO is smaller than that of ITO. Therefore, ZnO is more suitable for preparing the common electrode at the overlapping position with the sealant than ITO.
  • Step 502 Continue to form the gate electrode and the common electrode at a position non-overlapping with the sealant.
  • the common electrode at the non-overlapping position of the sealant (e.g., in the effective display area) is selected from the same metal opaque material as the gate.
  • the common electrode at the non-overlapping position of the sealant and the common electrode at the position overlapping the sealant may be connected by overlapping.
  • Step 503 continue to form a gate insulating layer, and sequentially form a semiconductor layer including a source and a drain, and a passivation insulating layer.
  • Step 504 Finally, a via hole and a second transparent electrode layer are formed.
  • the narrow bezel display device can be formed by boxing with a counter substrate (lower substrate or upper substrate) of, for example, a color filter substrate.
  • a liquid crystal layer is disposed between the upper and lower substrates, and a sealant is disposed at an edge of the upper and lower substrates.
  • the common electrode at the non-overlapping position with the sealant can also be formed by using a transparent conductive layer.
  • the common electrode at the position where the sealant overlaps and the common electrode at the non-overlapping position can be simultaneously formed. , thus connecting to each other.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

一种窄边框显示装置，包括：上基板（2），下基板（4），填设于该上基板（2）和下基板（4）之间的液晶层，以及设置于上基板（2）和下基板（4）边缘的封框胶（1），显示装置中与封框胶（1）重叠位置处的公共电极（51）为透明公共电极（51）。以及一种窄边框显示装置的制备方法。

Description

窄边框显示装置及其制备方法 技术领域
本发明的实施例涉及一种窄边框显示装置及其制备方法。 背景技术
目前， 窄边框技术在液晶显示器领域得到了广泛的应用， 各生产商也已 推出了自己的窄边框产品。 由于边框变窄， 液晶显示器的可视面积增加， 显 示效果更好。
图 1 ( a ) 、 ( b )分别为传统的显示面板非窄边框设计的正视图和部分 截面图， 图 2 ( a ) 、 ( b )分别为现有的显示面板窄边框设计的正视图和部 分截面图。 对比图 1和图 2可以看出， 窄边框技术需要封框胶 1同时与彩膜 基板 2上的部分黑矩阵（BM ) 3以及 TFT基板 4上的部分公共电极 5重叠， 以减少对于面板周边空间的占用， 实现窄边框的目的。 所述 BM3 不透光， 又由于公共电极 5通常选用金属 Cu、 A1或其合金等材料， 所以也是不透光 的， 因此当上述三部分重叠时， 就会导致 BM3与公共电极 5之间的封框胶 1 的难以实现紫外光固化。
为了解决上述问题， 现通过在 BM3或公共电极 5上与封框胶 1重叠的 位置设置多条并列的细缝（slit ) 6, 如刻蚀出的细缝 6。 如图 3 ( a ) 、 ( b ) 所示，紫外光能从所述细缝 6通过照射到封框胶 1上，从而实现紫外光固化。 对于在 BM3上形成细缝 6的情况， 进行封框胶 1的紫外光固化时， 紫外光 从彩膜基板 2侧透过 BM3上刻蚀细缝 6对封框胶 1进行照射； 对于在公共 电极 5上刻蚀细缝 6的情况， 进行封框胶 1的紫外光固化时， 紫外光从 TFT 基板 4侧透过公共电极 5上刻蚀细缝 6对封框胶 1进行照射。但是，对于 BM3 或公共电极 5上未刻蚀细缝 6的位置， 紫外光不能通过， 对应未刻蚀细缝 6 位置的封框胶 1不能固化完全。 因此， 在紫外光光照强度不变时， 封框胶 1 的紫外光固化时间将会延长， 固化效率较低。
下面再对上述设置有公共电极的 TFT基板的制备流程进行筒单描述，该 流程包括如下步骤。 首先， 在基板上形成第一透明电极层， 之后形成栅极以 及栅极绝缘层； 然后顺序形成包括源极和漏极的半导体层、 钝化绝缘层， 在 钝化绝缘层中形成过孔， 最后再形成第二透明电极层。 需要说明的是， 由于 所述公共电极采用金属 Cu、 A1或其合金等材料， 与栅极所用材料相同， 均 为不透光材料， 因此所述公共电极与所述栅极同时形成。 发明内容
本发明的实施例提供一种窄边框显示装置及其制备方法， 可解决现有封 框胶的紫外光固化时间长， 固化效率低的问题。
本发明的一个方面提供了一种窄边框显示装置， 包括： 上基板、 下基板， 填设于所述上基板和下基板之间的液晶层， 以及设置于所述上基板和下基板 边缘的封框胶； 所述显示装置中与所述封框胶重叠位置处的公共电极为透明 公共电极。
例如， 与所述显示装置的各边框对应位置处且与封框胶重叠的公共电极 均为透明公共电极。
例如， 所述透明公共电极为透明导电材料制成。
例如， 所述透明导电材料为氧化铟锡、 氧化铟辞或氧化辞。
例如， 所述与封框胶重叠位置处的公共电极的厚度设置为 400~1500人。 本发明的另一个方面提供了一种窄边框显示装置的制备方法， 包括： 设 置所述显示装置的上、 下基板， 并将相对设置的上、 下基板进行对盒形成所 述显示装置， 在所述上、 下基板间设置液晶层， 在所述上、 下基板边缘设置 封框胶。 该方法还包括： 形成与所述封框胶重叠位置处的公共电极， 与所述 封框胶重叠位置处的公共电极选用透明导电材料。
例如， 在形成所述显示装置的第一透明电极层的同时形成与所述封框胶 重叠位置处的公共电极。
例如， 所述与封框胶重叠位置处的公共电极选用的透明导电材料与所述 第一透明电极层的材料相同。
例如， 所述第一透明电极层和所述与封框胶重叠位置处的公共电极的形 成方法为： 在基板上沉积一层透明导电材料， 并通过构图工艺形成第一透明 电极层和所述与封框胶重叠位置处的公共电极。
例如， 所述透明导电材料的沉积温度为室温至 230度。 例如， 所述与封框胶非重叠位置处的公共电极和与封框胶重叠位置处的 公共电极通过重叠的方式相连接。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 筒单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1 ( a )为传统的显示面板非窄边框设计的正视图；
图 1 ( b )为传统的显示面板非窄边框设计的部分截面图；
图 2 ( a )为现有的显示面板窄边框设计的正视图；
图 2 ( b )为现有的显示面板窄边框设计的部分截面图；
图 3 ( a )为现有在 BM与封框胶 1重叠的位置设置细缝的部分彩膜基板 平面示意图；
图 3 ( b )为现有在公共电极与封框胶 1重叠的位置设置细缝的部分 TFT 基板平面示意图；
图 4为本发明实施例的窄边框显示面板的平面结构示意图；
图 5为本发明实施例的窄边框显示面板设计的部分截面图。
附图标记：
1封框胶； 2彩膜基板； 3黑矩阵； 4 TFT基板； 5公共电极； 6细缝； 51透明公共电极。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图，对本发明实施例的技术方案进行清楚、 完整地描述。显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
除非另作定义， 此处使用的技术术语或者科学术语应当为本发明所属领 域内具有一般技能的人士所理解的通常意义。 同样， "一个" 、 "一" 或者 "该" 等类似词语也不表示数量限制， 而是表示存在至少一个。 "包括" 或 者 "包含" 等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词 后面列举的元件或者物件及其等同， 而不排除其他元件或者物件。 "上" 、
"下" 、 "左" 、 "右" 等仅用于表示相对位置关系， 当被描述对象的绝对 位置改变后， 则该相对位置关系也可能相应地改变。
本发明的实施例提供了一种窄边框显示装置， 所述显示装置包括： 上基 板、 下基板、 填设于所述上基板和下基板之间的液晶层， 以及设置于所述上 基板和下基板边缘的封框胶； 在该实施例中， 将显示装置中与封框胶重叠位 置处的公共电极设置为透明导电材料形成透明公共电极， 因此可使紫外光透 过该公共电极以完全照射到封框胶， 实现封框胶的快速固化， 提高紫外光固 化效率。
下面结合附图及具体实施例对本发明作进一步详细说明。
图 4为本发明实施例的窄边框显示面板的平面结构示意图； 图 5为本发 明实施例的窄边框显示面板设计的沿 A-A，的部分截面图，图中示出了公共电 极。
如图 4和图 5所示， 本实施例的窄边框显示面板包括阵列基板 4、 彩膜 基板 2、 设置在阵列基板 4和彩膜基板 2的周边以将二者结合起来以形成液 晶盒的封框胶 1。 液晶盒中填充有液晶材料。 在显示面板的周边区域， 黑矩 阵 3和公共电极 51可以与封框胶 1相重叠。阵列基板 4和彩膜基板 2分别是 下基板和上基板的示例。 例如， 当作为下基板的阵列基板 4上形成有彩膜结 构时， 上基板无需再包括彩膜结构。
液晶显示面板可以为水平电场模式或者垂直电场模式。 水平电场模式可 以为边缘场开关（FFS )模式或面内开关（IPS )模式； 垂直电场模式可以为 扭曲向列 （TN )模式或垂直配向 （VA )模式等。
例如， 对于 FFS模式， 阵列基板的有效显示区域形成有两层透明电极， 分别为公共透明电极（ Vcom )和像素透明电极， 这两层电极用于形成水平电 场； 对于 TN模式， 阵列基板的有效显示区域也可以形成有两层透明电极， 分别为存储透明电极和像素透明电极。 除了有效显示区域中的公共电极， 阵 列基板在非显示区域（周边区域）还包括公共电极布线， 这些公共电极与封 框胶重叠。 非显示区域的公共电极例如可以与有效显示区域中的公共电极相 连接。 如图 4所示，所述与封框胶 1重叠位置处的公共电极 51为透明导电材料 制成， 所述透明导电材料可选为氧化铟锡（ITO ) 、 氧化铟辞（IZO ) 、 氧化 辞（ ZnO )等材料。 所述与封框胶 1重叠位置处的公共电极 51与非重叠位置 处的公共电极 5相连。
图 4所示仅在显示装置的相邻两边框（右、 下边框）对应位置处、 且与 封框胶 1重叠的公共电极 51设置为透明导电材料。当然，在实际应用过程中， 可将显示装置另外两条边框对应位置处、且与封框胶 1重叠的公共电极 51(图 4 中左、 上边框所指示的公共电极）设置为透明导电材料制成。 例如： 图 4 中所示的显示装置的上边框和左边框部分与封框胶 1重叠的公共电极 51均可 设置为透明导电材料。 所述透明导电材料形成的透明公共电极的厚度设置可 以为 400~150θΑ。 相应地， 与封框胶 1重叠的黑矩阵 3的部分中可以设置或 不设置细缝。
本发明实施例中，由于与封框胶 1重叠位置处的公共电极 51设置为透明 导电材料， 因此在对封框胶 1的紫外光固化时， 只需令紫外光从 TFT基板 4 一侧照射即可，紫外光可完整透过透明的公共电极 51照射到封框胶 1上，这 不同于如图 2所示构造现有的只有部分紫外光照射到封框胶 1上。 因此， 本 实施例可实现封框胶 1快速完整的固化， 提高固化效率。
本发明实施例的所述显示装置可为 ADS型、 平面内开关（IPS )型、 面 线开关（PLS )型等、 FFS型、 TN型等。
下面对本发明的一个实施例设置有公共电极的 TFT基板（上基板或下基 板） 的制备方法进行筒单描述。 该方法包括如下步骤 501~504：
步骤 501: 在基板上形成第一透明电极层以及与封框胶重叠位置处的公 共电极。
由于该步骤形成的公共电极是透光的， 可采用与第一透明电极层所用相 同的透明导电材料， 因此可与第一透明电极层同时形成。 所述透明导电材料 可为 ITO、 IZO或 ZnO等。 为了降低设置为透明导电材料的公共电极的电阻 率，可以通过降低透明导电材料的电阻，如通过降低 ITO的沉积温度来实现， 沉积温度可从 230度降至室温（25°C ) ； 又如， 可更换电阻率更低的透明电 极材料， ZnO的电阻率小于 ITO电阻率， 因此 ZnO较 ITO更适合制备与封 框胶重叠位置处的公共电极。 步骤 502: 继续形成栅极以及与封框胶非重叠位置处的公共电极。
这里， 与封框胶非重叠位置处（例如位于有效显示区域内） 的公共电极 选用已有的与栅极相同的金属不透光材料。 例如， 所述与封框胶非重叠位置 处的公共电极和与封框胶重叠位置处的公共电极可以通过重叠的方式相连 接。
步骤 503: 继续形成栅极绝缘层， 并顺序形成包括源极和漏极的半导体 层、 以及钝化绝缘层。
步骤 504: 最后形成过孔以及第二透明电极层。
优选的， 形成所述 TFT基板后， 可将其与例如彩膜基板的对置基板（下 基板或上基板）进行对盒形成所述窄边框显示装置。 上、 下基板间设置有液 晶层， 所述上、 下基板边缘设置有封框胶。
当然，在与封框胶非重叠位置处的公共电极也可以采用透明导电层形成， 在此种情况下， 则与封框胶重叠位置处的公共电极和非重叠位置处的公共电 极可以同时形成， 从而彼此连接。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1、 一种窄边框显示装置， 包括： 上基板、 下基板、 填设于所述上基板和 下基板之间的液晶层， 以及设置于所述上基板和下基板边缘的封框胶； 其中， 所述显示装置中与所述封框胶重叠位置处的公共电极为透明公共 电极。
2、根据权利要求 1所述的窄边框显示装置， 其中， 与所述显示装置的各 边框对应位置处、 且与封框胶重叠的公共电极均为透明公共电极。
3、根据权利要求 1或 2所述的窄边框显示装置， 其中， 所述透明公共电 极为透明导电材料制成。
4、根据权利要求 3所述的窄边框显示装置， 其中， 所述透明导电材料为 氧化铟锡、 氧化铟辞或氧化辞。
5、 根据权利要求 1-4任一所述的窄边框显示装置， 其中， 所述与封框胶 重叠位置处的公共电极的厚度设置为 400~150θΑ。
6、 一种窄边框显示装置的制备方法， 包括：
设置所述显示装置的上、 下基板，
将相对设置的上、 下基板进行对盒形成所述显示装置，
在所述上、 下基板间设置液晶层，
在所述上、 下基板边缘设置封框胶；
其中， 形成与所述封框胶重叠位置处的公共电极， 与所述封框胶重叠位 置处的公共电极由透明导电材料制成。
7、根据权利要求 6所述的方法， 其中， 在形成所述显示装置的第一透明 电极层的同时形成与所述封框胶重叠位置处的公共电极。
8、根据权利要求 7所述的方法， 其中， 所述与封框胶重叠位置处的公共 电极选用的透明导电材料与所述第一透明电极层的材料相同。
9、根据权利要求 7或 8所述的方法， 其中， 所述第一透明电极层和所述 与封框胶重叠位置处的公共电极的形成方法为：
在基板上沉积一层透明导电材料， 并通过构图工艺形成第一透明电极层 和所述与封框胶重叠位置处的公共电极。
10、 根据权利要求 9所述的方法， 其中， 所述透明导电材料的沉积温度 为室温至 230度。
11、 根据权利要求 6-10任一所述的方法， 其中， 所述透明导电材料为氧 化铟锡、 氧化铟辞或氧化辞。
12、 根据权利要求 6-11任一所述的方法， 其中， 所述与封框胶非重叠位 置处的公共电极和与封框胶重叠位置处的公共电极通过重叠的方式相连接。
PCT/CN2013/077358 2013-04-27 2013-06-18 窄边框显示装置及其制备方法 Ceased WO2014172971A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US14/235,975 US20140333881A1 (en) 2013-04-27 2013-06-18 Narrow frame display device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310153263.1 2013-04-27
CN201310153263.1A CN104122711A (zh) 2013-04-27 2013-04-27 一种窄边框显示装置及其制备方法

Publications (1)

Publication Number Publication Date
WO2014172971A1 true WO2014172971A1 (zh) 2014-10-30

Family

ID=51768186

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2013/077358 Ceased WO2014172971A1 (zh) 2013-04-27 2013-06-18 窄边框显示装置及其制备方法

Country Status (3)

Country Link
US (1) US20140333881A1 (zh)
CN (1) CN104122711A (zh)
WO (1) WO2014172971A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688812B (zh) * 2018-11-21 2020-03-21 友達光電股份有限公司 顯示裝置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104880144B (zh) * 2015-06-12 2018-06-08 合肥鑫晟光电科技有限公司 具有显示面板的变形检测功能的电子装置及相应的方法
CN116400536A (zh) * 2023-06-08 2023-07-07 广州华星光电半导体显示技术有限公司 一种显示面板及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101957522A (zh) * 2010-09-01 2011-01-26 友达光电股份有限公司 显示面板
CN102662275A (zh) * 2012-04-27 2012-09-12 深圳市华星光电技术有限公司 液晶显示模组及液晶显示装置
CN203259750U (zh) * 2013-04-27 2013-10-30 京东方科技集团股份有限公司 一种窄边框显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100814339B1 (ko) * 2001-11-16 2008-03-18 엘지.필립스 엘시디 주식회사 콜레스테릭 액정 컬러필터를 가지는 반사형 액정표시장치
JP4058766B2 (ja) * 2004-03-23 2008-03-12 ソニー株式会社 反射型液晶表示素子および液晶表示装置
CN102062975A (zh) * 2007-03-30 2011-05-18 夏普株式会社 液晶显示装置
US8687154B2 (en) * 2007-11-14 2014-04-01 Hydis Technologies Co., Ltd. In-plane switching mode liquid crystal display device
US8681305B2 (en) * 2008-12-24 2014-03-25 Lg Display Co., Ltd. Liquid crystal display device comprising a common line pattern formed correspond to the conductive seal pattern, a transparent electrode pattern overlapping the common line pattern with an insulating layer interposed there between, the transparent electrode pattern having a width equal to or less than that of the common line pattern
EP2835685B1 (en) * 2012-03-30 2019-05-08 Sharp Kabushiki Kaisha Liquid crystal display panel

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101957522A (zh) * 2010-09-01 2011-01-26 友达光电股份有限公司 显示面板
CN102662275A (zh) * 2012-04-27 2012-09-12 深圳市华星光电技术有限公司 液晶显示模组及液晶显示装置
CN203259750U (zh) * 2013-04-27 2013-10-30 京东方科技集团股份有限公司 一种窄边框显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688812B (zh) * 2018-11-21 2020-03-21 友達光電股份有限公司 顯示裝置

Also Published As

Publication number Publication date
CN104122711A (zh) 2014-10-29
US20140333881A1 (en) 2014-11-13

Similar Documents

Publication Publication Date Title
CN104111748B (zh) 集成有触摸屏的显示装置的滤色器基板及其制造方法
CN103033978B (zh) 彩膜基板及其制作方法、显示装置
JP5285280B2 (ja) 液晶表示装置及び液晶表示装置の製造方法
US9323096B2 (en) Pixel unit, method for fabricating the same and liquid crystal display device
CN202512549U (zh) 一种触摸液晶显示装置、液晶显示面板及上部基板
CN103048838B (zh) 一种阵列基板、液晶显示面板及驱动方法
CN104749841B (zh) 薄膜晶体管阵列基板及其制造方法
KR101109106B1 (ko) 표시패널 및 그 제조방법
WO2015106538A1 (zh) 触控显示面板及其制备方法
CN102023409A (zh) 显示面板和包括该显示面板的液晶显示器
CN102955612B (zh) 一种触控传感器、其制备方法及显示装置
US10353251B2 (en) Display panel and manufacturing method thereof
WO2016201762A1 (zh) IPS型On Cell触控显示面板及其制作方法
CN102629047B (zh) 像素单元、阵列基板、液晶面板及显示设备
CN106200153B (zh) 一种液晶显示装置
WO2016086648A1 (zh) 触摸屏及其制作方法及显示装置
WO2017000331A1 (zh) 互电容触控显示面板及其制作方法
CN104765192A (zh) 一种液晶显示面板及其制作方法、显示装置
CN103744205B (zh) 彩膜基板及其制作方法、显示面板和液晶显示装置
CN102929056B (zh) 一种阵列基板及其制造方法、显示装置
CN203259750U (zh) 一种窄边框显示装置
WO2014172971A1 (zh) 窄边框显示装置及其制备方法
WO2015188539A1 (zh) 光栅基板及其制作方法、显示装置
CN203930286U (zh) 母板堆叠结构
CN202533686U (zh) 一种阵列基板及显示设备

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14235975

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13882701

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 07.03.2016)

122 Ep: pct application non-entry in european phase

Ref document number: 13882701

Country of ref document: EP

Kind code of ref document: A1