WO2014156918A1 - Cible de pulvérisation cathodique de niobium - Google Patents

Cible de pulvérisation cathodique de niobium Download PDF

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Publication number
WO2014156918A1
WO2014156918A1 PCT/JP2014/057659 JP2014057659W WO2014156918A1 WO 2014156918 A1 WO2014156918 A1 WO 2014156918A1 JP 2014057659 W JP2014057659 W JP 2014057659W WO 2014156918 A1 WO2014156918 A1 WO 2014156918A1
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Prior art keywords
tungsten
niobium
target
purity
variation
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PCT/JP2014/057659
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English (en)
Japanese (ja)
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健太郎 原田
一允 大橋
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Jx日鉱日石金属株式会社
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Priority to JP2014537409A priority Critical patent/JP5837214B2/ja
Publication of WO2014156918A1 publication Critical patent/WO2014156918A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering

Definitions

  • the present invention relates to a high-purity niobium sputtering target having a uniform and fine structure, stable plasma during sputtering, and excellent film uniformity (uniformity).
  • the high-purity niobium of the present invention contains (adds) tungsten. However, since the content of these elements is small, it will be collectively referred to as “high-purity niobium” in the present specification.
  • Sputtering methods are used to form coatings made of metal or ceramic materials in various fields such as electronics, corrosion-resistant materials, decorative fields, catalysts, cutting / polishing materials, and wear-resistant materials. Yes.
  • the sputtering method itself is a well-known method in the above-mentioned field, but recently, particularly in the field of electronics, a sputtering target suitable for forming a complex-shaped film, forming a circuit, and the like is required.
  • a niobium film has attracted attention as a liner film for improving the reflowability of the Al wiring film, and a niobium sputtering target having excellent sputtering characteristics is required to form this niobium film.
  • this niobium target is processed into a target by repeatedly forging and annealing (heat treatment) of an ingot or billet obtained by melting and casting a niobium raw material, and further rolling and finishing (mechanical and polishing).
  • forging of an ingot or billet destroys the cast structure, diffuses and disappears pores and segregation, and further recrystallizes by annealing, thereby increasing the density and strength of the structure.
  • the target is manufactured.
  • a melt-cast ingot or billet has a crystal grain size of 50 mm or more. By forging and recrystallizing the ingot or billet, the cast structure is destroyed, and the average grain size varies depending on the size. Can obtain crystal grains of about 200 ⁇ m.
  • the finer and uniform the recrystallized structure of the target is, the more uniform the film can be formed, and less arcing and particles are generated. It is said that a film having excellent thickness uniformity (uniformity) can be obtained. Therefore, various measures are adopted in the target manufacturing process from the viewpoint of uniformizing the recrystallized structure.
  • Patent Document 1 and Patent Document 2 are sputtering targets for forming an Nb film used as a liner material for an Al wiring film in an integrated circuit wiring technique, and the average crystal grain size of Nb is 100 ⁇ m or less.
  • each crystal grain has a grain size in the range of 0.1 to 10 times the average crystal grain size, and the ratio of the grain sizes of adjacent crystal grains is in the range of 0.1 to 10.
  • a target having a variation in the ratio of particle size to size within ⁇ 30% is disclosed.
  • Patent Document 3 is a high-purity niobium for producing a sputter target, a capacitor, a resistance film, a wire, etc., having a purity of 99.99% and a metal niobium having an average particle diameter of about 150 ⁇ m or less. Disclosure. In addition, the amount of tantalum, molybdenum, and tungsten as impurities in metallic niobium is less than about 100 ppm, and by reducing the amount of impurities in the metal, the properties and performance of the manufactured product should be good. Is disclosed.
  • Patent Document 4 discloses a sputtering target made of an Nb material for sputtering an Nb oxide film suitable for an optical thin film, wherein the hydrogen content in the sputtering target made of the Nb material is 1 to 1000 ppm.
  • a technique for suppressing the variation in the film thickness associated with the change in the film forming speed by making the variation in the hydrogen content within 20% is disclosed.
  • the present invention maintains a high purity of niobium, and by adding a specific element, it has a uniform fine structure, the plasma during sputtering is stable, and the film thickness is uniform (uniformity).
  • An object is to provide an excellent high-purity niobium sputtering target.
  • the present invention maintains a high purity of niobium, and by adding a specific element, has a uniform and fine structure, stable plasma during sputtering, and a film
  • niobium sputter rig targets with excellent thickness uniformity (uniformity) can be obtained.
  • the present invention 1) A niobium sputtering target containing 5 wtppm or more and 100 wtppm or less of tungsten, having a purity excluding tungsten, tantalum and gas components of 99.995% or more and an average crystal grain size of 150 ⁇ m or less, 2) The niobium sputtering target according to 1) above, wherein the variation in tungsten content is within 30%; 3) The niobium sputtering target according to 1) or 2) above, wherein the variation in average crystal grain size is within 20%.
  • the present invention maintains the purity of niobium at a high purity, and by adding tungsten as an essential component, it has a uniform and fine structure, the plasma at the time of sputtering becomes stable, and the film thickness uniformity (uniformity) is excellent. Further, it has an excellent effect that a high-purity niobium sputtering target can be provided. And even in the initial stage of sputtering, since the plasma is stabilized, the burn-in time can be shortened.
  • the niobium sputtering target of the present invention is usually produced by the following steps. First, niobium having a purity of 5N (99.999%) or more is prepared as a niobium raw material. Although there is no restriction
  • this is melted and purified by electron beam melting or the like to increase the purity, and this is cast to produce an ingot or billet.
  • An appropriate amount of tungsten can be added during this dissolution. There is no particular limitation on the purity of tungsten, but it is preferable to use a material having few impurities in advance.
  • the niobium sputtering target of the present invention can be manufactured by subjecting the ingot or billet to heat treatment, forging, rolling, finishing (machining, polishing) or the like.
  • ingot heat treatment at 1500 ° C. to 1800 ° C.—forging at room temperature (forging) —heat treatment at 150 ° C. to 1250 ° C.—cold rolling—heat treatment at 1050 ° C. to 1150 ° C.—finishing (machining, polishing)
  • the cast structure By forging or rolling, the cast structure can be destroyed, and the pores and segregation can be diffused or disappeared. Furthermore, this can be recrystallized by heat treatment, and by repeating this forging or rolling and heat treatment (recrystallization annealing), It is possible to increase the density, refinement and strength of the tissue.
  • the niobium sputtering target is manufactured by the above manufacturing process.
  • this manufacturing process shows an example, and the present invention does not invent this manufacturing process.
  • the present invention includes all of them.
  • the present inventors usually have a portion where tungsten having a content of about 7 to 20 wtppm happens to be segregated to about 50 wtppm, and the crystal grain size is locally I found that it was miniaturized.
  • niobium sputtering target of the present invention what is important is that niobium having a purity of 99.995% or more excluding tungsten, tantalum and gas components contains 5 wtppm or more and 100 wtppm or less of tungsten as an essential component. .
  • the lower limit value of 5 wtppm of the tungsten content is a numerical value for exerting the effect
  • the upper limit value of 100 wtppm of the tungsten content is a numerical value for maintaining the effect of the present invention.
  • the addition of tungsten can be performed when the niobium raw material is melted by electron beam.
  • the niobium raw material usually contains a small amount of tungsten, the impurity concentration of the purified niobium is reduced. If it is analyzed and the tungsten content specified in the present invention is satisfied, it can be used.
  • niobium sputtering target of the present invention its purity needs to be 99.995% or more excluding tungsten, tantalum and gas components.
  • gas components are difficult to remove unless they are special methods, and it is difficult to remove them during purification in a normal production process. Therefore, the gas components of oxygen, hydrogen, carbon, and nitrogen are the same as those of the niobium of the present invention. Exclude from purity.
  • tantalum is an element belonging to the same group as niobium, and its influence on the film characteristics when forming a film is small. Further, when tantalum is separated, the cost is greatly increased, so it is excluded from the purity.
  • tungsten leads to a uniform and fine structure of niobium, but the inclusion of other metal components, non-metal components, oxides, nitrides, carbides and other ceramics is harmful and can be tolerated. Can not. This is because these impurities are considered to have a function of suppressing the action of tungsten. Further, these impurities are clearly different from tungsten, and it is difficult to finish the crystal grain size of the niobium sputtering target uniformly, and do not contribute to stabilization of the sputtering characteristics.
  • the variation in the tungsten content in the target is within 30%.
  • the appropriate tungsten content has a function (property) for forming a uniform and fine structure of the niobium sputtering target, the more uniform dispersion of tungsten can greatly contribute to the uniform refinement of the target structure.
  • the variation in the content of tungsten in the target is within 20%, and it is important to have a clear intention, and the method for controlling the variation is not particularly limited.
  • the tungsten content distribution in the ingot varies depending on the processing conditions of the electron beam melting, but it is possible to uniformly diffuse tungsten by performing heat treatment at 1500 ° C. to 1800 ° C. after the ingot is manufactured.
  • the variation in the tungsten content in the target for example, as shown in FIG. 1, in the case of a disk-shaped target, three points (center point) are arranged on eight equal lines starting from the center of the disk. , 1 ⁇ 2 point of radius, outer periphery or its neighboring points) and analyze the total tungsten content of 17 points ⁇ 16 points + center point (one point because the center point is common) ⁇ . Then, the variation can be calculated based on the equation ⁇ (maximum value ⁇ minimum value) / (maximum value + minimum value) ⁇ ⁇ 100. In addition, also in the below-mentioned Examples and Comparative Examples, the variation in tungsten content is obtained using this analysis technique.
  • the niobium sputtering target of the present invention preferably further has an average crystal grain size of 150 ⁇ m or less.
  • the crystal grain size can be made finer, but it is important to note that the average crystal grain size is 150 ⁇ m or less and that the intention is clear.
  • the purpose of the present invention is to refine the crystal grain size, the lower limit is not particularly limited, but from the viewpoint of controlling the crystal grain size, it is preferably 30 ⁇ m or more, more preferably 50 ⁇ m or more. Further, it is more desirable that the variation of the average crystal grain size is within 20%.
  • the variation in the crystal grain size in this target for example, as shown in FIG. 1, in a disk-shaped target, three points (center point, Taking the half point of the radius, the outer periphery or the vicinity thereof, and measuring the crystal grain size of niobium of a total of 17 points ⁇ 16 points + center point (one point because the center point is common) ⁇ . Based on the formula ⁇ (maximum value ⁇ minimum value) / (maximum value + minimum value) ⁇ ⁇ 100, the variation in crystal grain size can be calculated. It should be noted that also in examples and comparative examples described later, the variation in crystal grain size is obtained using this analysis technique.
  • the inclusion of tungsten forms a uniform fine structure of the target, thereby stabilizing the plasma during sputtering, thereby improving the film thickness uniformity (uniformity) of the film formed by sputtering. It becomes possible. Further, since the plasma at the time of sputtering is stable even at the initial stage of sputtering, the burn-in time can be shortened.
  • Example 1 A raw material in which a predetermined amount of tungsten was added to niobium having a purity of 99.999% so that the tungsten content in the target was 7 wtppm was melted by electron beam, and this was cast into an ingot. Next, the ingot was heat-treated at 1600 ° C. for 5 hours, forged at room temperature, and then heat-treated at 1200 ° C. for 2 hours. Next, after rolling this at room temperature, heat treatment was performed at 1100 ° C. for 1 hour and finishing was performed to obtain a target material having a diameter of 450 mm.
  • the average crystal particle size was 132 ⁇ m, and the variation was 19%.
  • the crystal grain size was measured for only one part of the target using the cutting method described in JIS / H0501.
  • the variation in the content of tungsten was 29%, and the purity excluding tungsten, tantalum and gas components was 99.999%.
  • the size of each part of the target subjected to component analysis was 2.5 mm ⁇ 2.5 mm ⁇ 20 mm.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 1.1%, and the film thickness distribution fluctuation was small.
  • the sheet resistance was measured using OMNIMAP RS75 manufactured by KLA-Tencor. The uniformity of the film was evaluated as “good” when the sheet resistance distribution variation was 3 or less, and “bad” when 3 or more.
  • Example 2 A raw material in which a predetermined amount of tungsten was added to niobium having a purity of 99.999% so that the tungsten content in the target was 15 wtppm was melted by electron beam, and this was cast into an ingot. Next, the ingot was heat-treated at 1600 ° C. for 5 hours, forged at room temperature, and then heat-treated at 1200 ° C. for 2 hours. Next, after rolling this at room temperature, heat treatment was performed at 1100 ° C. for 1 hour and finishing was performed to obtain a target material having a diameter of 450 mm.
  • the average crystal grain size was 129 ⁇ m, and the variation was 9%.
  • the variation in the content of tungsten was 16%, and the purity excluding tungsten, tantalum and gas components was 99.998%.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 1.1%, and the film thickness distribution fluctuation was small.
  • Example 3 A raw material in which a predetermined amount of tungsten was added to niobium having a purity of 99.999% so that the tungsten content in the target was 55 wtppm was melted by electron beam, and this was cast into an ingot. Next, the ingot was heat-treated at 1600 ° C. for 5 hours, forged at room temperature, and then heat-treated at 1200 ° C. for 2 hours. Next, after rolling this at room temperature, heat treatment was performed at 1100 ° C. for 1 hour and finishing was performed to obtain a target material having a diameter of 450 mm.
  • the average crystal grain size was 107 ⁇ m, and the variation was 11%.
  • the variation in the content of tungsten was 16%, and the purity excluding tungsten, tantalum and gas components was 99.996%.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 1.2%, and the film thickness distribution fluctuation was small.
  • Example 4 A raw material in which a predetermined amount of tungsten was added to niobium having a purity of 99.999% so that the tungsten content in the target was 88 wtppm was melted by electron beam, and this was cast into an ingot. Next, the ingot was heat-treated at 1600 ° C. for 5 hours, forged at room temperature, and then heat-treated at 1200 ° C. for 2 hours. Next, after rolling this at room temperature, heat treatment was performed at 1100 ° C. for 1 hour and finishing was performed to obtain a target material having a diameter of 450 mm.
  • the average crystal particle size was 106 ⁇ m, and the variation was 10%.
  • the variation in the tungsten content was 10%, and the purity excluding tungsten, tantalum and gas components was 99.995%.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 1.0%, and the film thickness distribution fluctuation was small.
  • Example 5 A raw material in which a predetermined amount of tungsten was added to niobium having a purity of 99.999% so that the tungsten content in the target was 93 wtppm was melted by electron beam, and this was cast into an ingot. Next, the ingot was heat-treated at 1600 ° C. for 5 hours, forged at room temperature, and then heat-treated at 1200 ° C. for 2 hours. Next, after rolling this at room temperature, heat treatment was performed at 1100 ° C. for 1 hour and finishing was performed to obtain a target material having a diameter of 450 mm.
  • the average crystal particle size was 98 ⁇ m, and the variation was 14%.
  • the variation in the content of tungsten was 14%, and the purity excluding tungsten, tantalum and gas components was 99.995%.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 1.4%, and the film thickness distribution fluctuation was small.
  • the average crystal particle size was 230 ⁇ m, and the variation was 39%.
  • the variation in the content of tungsten was 60%, and the purity excluding tungsten, tantalum and gas components was 99.999%.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 5.2%, and the film thickness distribution fluctuation was large.
  • the average crystal particle size was 221 ⁇ m, and the variation was 36%.
  • the variation in the content of tungsten was 50%, and the purity excluding tungsten, tantalum and gas components was 99.999%.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 4.9%, and the film thickness distribution fluctuation was large.
  • the average crystal particle size was 127 ⁇ m, and the variation was 34%.
  • the variation in the content of tungsten was 38%, and the purity excluding tungsten, tantalum and gas components was 99.998%.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 4.8%, and the film thickness distribution fluctuation was large.
  • the average crystal particle size was 103 ⁇ m, and the variation was 29%.
  • the variation in the content of tungsten was 31%, and the purity excluding tungsten, tantalum and gas components was 99.994%.
  • the sheet resistance depends on the sheet resistance
  • the distribution of the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness.
  • the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated.
  • the sheet resistance distribution fluctuation (standard deviation / average value ⁇ 100) was 4.9%, and the film thickness distribution fluctuation was large.
  • the average crystal particle size was 108 ⁇ m, and the variation was 37%.
  • the variation in the content of tungsten was 41%, and the purity excluding tungsten, tantalum and gas components was 99.993%.
  • the sheet resistance in the wafer (12 inches) was measured, thereby examining the distribution of the film thickness. Specifically, the sheet resistance at 49 points on the wafer was measured, and the average value and standard deviation were calculated. As a result, as apparent from Table 1, in this comparative example, the sheet resistance distribution variation (standard deviation / average value ⁇ 100) was 5.5%, and the film thickness distribution variation was large.
  • the present invention includes a niobium sputtering target containing tungsten of 5 wtppm or more and 100 wtppm or less and having a purity of 99.995% or more excluding tungsten, tantalum and gas components, thereby providing a uniform fine structure and stable plasma.
  • a niobium sputtering target containing tungsten of 5 wtppm or more and 100 wtppm or less and having a purity of 99.995% or more excluding tungsten, tantalum and gas components, thereby providing a uniform fine structure and stable plasma.
  • it has an excellent effect on the uniformity of film thickness (uniformity).
  • the plasma during sputtering can be stabilized even in the initial stage, it has the effect of shortening the burn-in time. Therefore, the liner film for improving the reflowability of the field of electronics, particularly the Al wiring film It is useful as a target suitable for forming a film having another complicated shape.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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Abstract

L'invention concerne une cible de pulvérisation cathodique de niobium qui est caractérisée en ce qu'elle contient 5-100 ppm en poids du tungstène, en ce qu'elle a une pureté de 99,995 % à l'exception du tungstène, du tantale et d'un composant gazeux et en ce que la dimension moyenne de grain cristallin est 150 µm ou moins. La présente invention s'attaque au problème consistant à proposer une cible de pulvérisation cathodique de niobium qui a une microstructure uniforme, dans laquelle un plasma est stable et qui rend possible d'améliorer l'uniformité d'épaisseur de film.
PCT/JP2014/057659 2013-03-27 2014-03-20 Cible de pulvérisation cathodique de niobium WO2014156918A1 (fr)

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JP2014537409A JP5837214B2 (ja) 2013-03-27 2014-03-20 ニオブスパッタリングターゲット

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JP2013-066489 2013-03-27
JP2013066489 2013-03-27

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107130216A (zh) * 2017-05-18 2017-09-05 芜湖映日科技有限公司 一种旋转铌靶材及其制备方法

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Publication number Priority date Publication date Assignee Title
EP3951004A4 (fr) * 2019-03-26 2022-12-14 JX Nippon Mining & Metals Corporation Cible de pulvérisation de nobium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511651A (ja) * 2000-05-22 2004-04-15 キャボット　コーポレイション 高純度ニオブおよびそれを含む製品、ならびにその製造方法
JP2004183040A (ja) * 2002-12-03 2004-07-02 Toshiba Corp Ｎｂスパッタリングターゲットおよびその製造方法、並びにそれを用いた光学薄膜、光学部品
JP2005097696A (ja) * 2003-09-26 2005-04-14 Toshiba Corp スパッタリングターゲットとそれを用いたＮｂ酸化膜の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511651A (ja) * 2000-05-22 2004-04-15 キャボット　コーポレイション 高純度ニオブおよびそれを含む製品、ならびにその製造方法
JP2004183040A (ja) * 2002-12-03 2004-07-02 Toshiba Corp Ｎｂスパッタリングターゲットおよびその製造方法、並びにそれを用いた光学薄膜、光学部品
JP2005097696A (ja) * 2003-09-26 2005-04-14 Toshiba Corp スパッタリングターゲットとそれを用いたＮｂ酸化膜の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107130216A (zh) * 2017-05-18 2017-09-05 芜湖映日科技有限公司 一种旋转铌靶材及其制备方法

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