Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/005—Processes
  • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0008—Processes
  • H01L2933/0033—Processes relating to semiconductor body packages
  • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
  • H01L33/502—Wavelength conversion materials
  • H01L33/504—Elements with two or more wavelength conversion materials

Definitions

• a method of manufacturing an electromagnetic radiation emitting assembly and electromagnetic radiation emitting assembly A method of manufacturing an electromagnetic radiation emitting assembly and electromagnetic radiation emitting assembly
• the invention relates to a method for producing an electromagnetic radiation emitting assembly and an electromagnetic radiation emitting assembly.
• white light can be generated via additive color mixing.
• a material having phosphor can be applied to a component emitting electromagnetic radiation, referred to below as a component, for example an LED.
• Phosphor material which may also be referred to as a conversion material or conversion material, converts the electromagnetic radiation generated by the device with respect to it
• Wavelength For example, by means of the component blue light can be generated, which by means of
• Conversion material can be converted into yellow light.
• the mixture of converted, for example yellow, and unconverted, for example blue, light then appears white.
• the assemblies are first made in a composite component comprising a plurality of components.
• the component composite may be, for example, a wafer.
• the properties of the individual components, for example the LEDs, in a wafer differ from one another.
• the properties are physical, for example
• Wavelengths of the generated light and / or brightnesses of the generated light can be produced by one device of a wafer.
• one device of a wafer can produce light of a different brightness than another
• the properties of a component are thus individual and are therefore also referred to below as component-individual properties.
• the material comprising the phosphor for example in the form of phosphor layers, for example in the form of phosphor chips, can be applied to the components.
• One of the assemblies is formed by at least one component with at least one phosphor layer.
• the phosphor layers can not be applied exactly the same to all components. What for the
• White conversion required phosphorus amount may vary from component to component.
• Assemblies are the same. If the amounts of phosphor differ only slightly from one another, different color loci for the light produced can also result in the corresponding assemblies, even if the properties of the components are identical.
• Bins The application of the conversion material takes place for example via screen printing or molding processes in which
• Conversion tile for the respective component geometries are produced and also sorted according to their properties in bins. For example, the degree of conversion of the phosphor chips is measured as a property. Then it is determined which phosphor flakes to which
• a method of manufacturing an electromagnetic radiation emitting assembly is provided. The method becomes
• Component array provided, the electromagnetic radiation emitting components.
• the components are physically coupled together in the composite component.
• At least one component ⁇ individual property is determined in each case for the components.
• the structure mask has corresponding to the components
• Characteristics of the corresponding components are formed component individually.
• the structure mask recesses give phosphor areas which are in the
• Components are formed phosphor layers.
• the structure mask is removed from the component network.
• the components are separated from the composite component.
• An assembly is separated from at least one of
• Components and formed by at least one phosphor layer formed thereon Components and formed by at least one phosphor layer formed thereon.
• Structural mask recesses form a component composite individual structural mask.
• an individual structure mask formed, depending on the device-individual properties of the components of the corresponding component network.
• the component ⁇ individual Strukturmaskenausappelgeber cause that for each component in the composite component, the phosphor layer and thus the amount of phosphor can be adjusted individually. For example, diameter, number, size, shape and / or side lengths of the
• Structural mask recesses can be individually varied from component to component, thereby reducing the areal dimensions of the phosphor areas in the structural recesses
• Components are designed so that by means of
• Phosphor plates to matching components can be dispensed with.
• Structural recesses and thus the component structure-individual structural mask can store the data corresponding to the properties of the components and then
• the amount of phosphor and / or phosphor layers required for the individual components can be determined by means of a suitable software program. Depending on the required amount of phosphor or phosphor layers can then the shapes and sizes of the StrukturmaskenausEnglishept and thus the structure mask itself are determined.
• the component composite is formed, for example, by a wafer having a plurality of layers and contact surfaces. That the components in the component network
• a substrate of the components and / or individual layers of the components may extend over the entire component network. That the to be determined
• Properties can be for example the forward voltage, the generated brightness and / or the generated wavelength.
• the forward voltage the generated brightness and / or the generated wavelength.
• Component network under otherwise identical test conditions light of different wavelengths and / or with another
• Brightness can be generated.
• the fact that the structure mask is formed may mean, for example, that the structure mask is first formed and then on the component composite
• the phosphor layers may also be referred to as first phosphor layers.
• the structural mask recesses extend to the surfaces of the components and define the
• Fluorescent areas of the components In other words, it is predetermined by means of the structure mask recesses how the phosphor areas are formed and where on the
• Component is applied a phosphor layer and where not.
• the structure mask can be removed, for example, in an etching process from the component composite.
• the components For example, by means of cutting or sawing, for example by means of a laser, from the
• An assembly may comprise one, two or more of the singulated devices and at least one each formed thereon
• Phosphor layer are formed.
• the pattern mask is formed directly on the component composite. This can help to make the structure mask precise, simple and / or cost-effective. Alternatively, the
• Structure mask are first formed and then placed on the component network.
• the structure mask has a photolithographically structurable material, which is initially applied flat over the component composite. Depending on the determined properties, the surface-applied material is exposed. The exposure can
• the structurable material may be, for example, a paint and / or applied in the form of a film on the component composite.
• the photolithographically structurable material can be applied, for example, with a predetermined thickness.
• the thickness may range from, for example, 10 ym to 200 ym, for example 40 ym to 60 ym, for example about 50 ym.
• the pattern mask is patterned by means of a printing process Applied component composite. This can help make the structure mask precise, easy and / or cost effective
• the fact that the structure mask is applied in a structured manner may mean, for example, that the structure of the structure mask is applied directly during the application of the material
• Structure mask is formed on the component composite. This is in contrast to an initially flat
• Phosphor layers applied by doctoring In a subsequent removal of the structure mask, it is also possible to remove the phosphor-comprising material on the structure mask. Alternatively, the phosphor having material on the pattern mask first
• Phosphor layers for example, a phosphor-silicone mixture can be used.
• the material comprising the phosphor (s) will be applied to the
• Phosphor layers applied by spraying for example spray coating.
• the material comprising the phosphors or phosphors is sprayed onto the structure mask and onto the phosphor regions of the components.
• the structure mask is then also the phosphor having material on the
• Phosphor layers for example, a
• Converter mixture can be used, the one or the
• the phosphor layers are dried
• Luminescent layers and / or the structure mask removed at least partially.
• the removal of the phosphor layers, if the phosphor layers also cover the pattern mask, can help to expose the pattern mask so that it can subsequently be easily removed. Furthermore, the removal of the phosphor layers over the
• the phosphor layers then have at different lateral dimensions, ie parallel to the surface of the components, the same layer thicknesses perpendicular to the surface of the components. This can help to subsequently with the appropriate
• the material of the phosphor layers can of
• At least one device in the component network becomes two or more
• the corresponding component then has two or more phosphor areas. This can help the
• At least one device in the component network becomes two or more
• Structural mask recesses for the corresponding component This can help to set the color location very precisely.
• the further phosphor layer may comprise, for example, other phosphors or the same phosphors in a different concentration than the first phosphor layers. Furthermore, the further phosphor layer may be another
• the phosphor layer may be formed such that a shape of the second phosphor layer of a shape of the cavities formed between the first phosphor layers
• the cavities can be specified. If the cavities are roundish, for example circular or oval, then the second phosphor layers can be correspondingly roundish or circular or oval. If the cavities polygonal, such as rectangular, for example
• the second phosphor layers can accordingly be polygonal, rectangular or square.
• the second phosphor layers can accordingly be polygonal, rectangular or square.
• Phosphor layers can have rows and columns.
• Cavities are formed between the rows and columns.
• the grid shape may be formed such that the cavities are round, for example circular or oval, or polygonal, for example rectangular or square.
• Electromagnetic radiation emitting assembly comprises an electromagnetic radiation emitting device having at least one device-individual property. At least one phosphor layer whose shape and size is formed as a function of the component-individual property is formed on the component.
• Figure 1 is a plan view of an embodiment of a
• FIG. 2 is a sectional view of the component network according to FIG. 1 along the line II-II .;
• FIG. 3 shows the component network according to FIG. 2 in a second embodiment
• FIG. 4 shows the component network according to FIG. 2 in a third embodiment
• FIG. 5 shows the component network according to FIG. 2 in a third
• Figure 6 is a sectional view of an embodiment of a composite component
• Figure 7 is a sectional view of an embodiment of a composite component.
• Electromagnetic radiation-emitting component may be in various embodiments, a semiconductor device emitting electromagnetic radiation and / or as a diode emitting electromagnetic radiation, as a diode emitting organic electromagnetic radiation, as a transistor emitting electromagnetic radiation or as an organic electromagnetic
• the radiation may, for example, be light in the visible range, UV light and / or infrared light.
• the electromagnetic radiation emitting device for example, as a light-emitting diode (light emitting diode, LED) as an organic light-emitting diode (organic light emitting diode, OLED), as a light-emitting diode (LED).
• Component may be part of an integrated circuit in various embodiments. Furthermore, a Be provided plurality of light emitting devices, for example housed in a common
• Component is hereinafter referred to as a component.
• the electromagnetic radiation emitting assembly is hereinafter referred to as an assembly.
• FIG. 1 shows a plan view of an exemplary embodiment of a component assembly 10 in a first state during a method for producing assemblies that emit electromagnetic radiation.
• the component composite 10 has a plurality of components 12.
• the component composite 10 may be more or less than those shown in FIG. 1
• the component assembly 10 is round in plan view, in particular circular.
• the components 12 are polygonal in plan view, in particular rectangular, in particular square. Alternatively, both the component composite 10 and the components 12 may be formed differently in plan view.
• the component composite 10 may be polygonal, for example rectangular or square-shaped, and / or the components 12 may be rounded, for example oval or circular.
• the component composite 10 may be, for example, a waver and / or im
• the components are suitable for emitting
• the components are suitable for receiving phosphor layers, wherein at least one component and at least one formed thereon
• Phosphor layer an electromagnetic radiation
• FIG. 2 shows a sectional view of the component composite 10 according to FIG. 1 along the line II-II shown in FIG. 1.
• the component composite 10 has a substrate 14, a lower electrode layer 16, an optically active layer 17 and an upper electrode layer 18. Further, each device 12 in the upper electrode layer 18 has a
• the upper electrode layer 18 is suitable for receiving a phosphor layer (not shown in FIG. 2).
• the region of the upper electrode layer 18 in which the phosphor layer is applied can also be referred to as
• the contact region 20 is suitable for electrically contacting the corresponding component 12.
• Electrode layer 16, 18 is generated in the optically active layer 17 electromagnetic radiation emitted in the direction away from the substrate 14, in Figure 2, for example, upwards.
• a color place which means the
• electromagnetic radiation of one of the modules can be obtained, results from the properties of the
• the phosphors of one of the phosphor layers are generated by means of the electromagnetic radiation generated by the corresponding component 12, which can also be referred to as excitation radiation in this context.
• the excitation radiation can be any radiation that is energetically stimulated.
• the excitation radiation can be any radiation that is energetically stimulated.
• the phosphors emit light or more than one preset color. It therefore finds one
• Conversion radiation is generated. During conversion, the wavelengths of the excitation radiation are shifted to shorter or longer wavelengths.
• the colors can be
• Color locale correspond.
• the individual colors may, for example, have green, red or yellow light and / or the
• Mixed colors can be mixed, for example, from green, red and / or yellow light and / or, for example, white
• blue light may be provided, for example, by forming the phosphor layer such that at least partially unconverted excitation radiation will render the assembly useable
• the single or mixed colors can be determined with the help of the phosphor layer and the
• green, red and yellow can be displayed with the aid of blue excitation light.
• the phosphors can also be chosen so that they represent red, green, blue and yellow.
• the individual components 12 may, after finished processing of the component assembly 10 along separating lines 20
• Components 12 are not separated from each other and
• the components 12 can already be separated before separation
• Component network 10 contacted, operated and / or measured.
• component-individual
• Component network 10 can be determined. For example, for each component 12 as a component-individual property, the corresponding forward voltage, the generated wavelength and / or the brightness generated, given otherwise Boundary conditions, for example, the same edge parameters are determined. In other words, the components 12 can be operated in the composite element 10 under the same conditions, but then show individually from each other
• Fluorescent area can be determined on the corresponding component 12, which with phosphor material with the
• predetermined thickness must be coated so that the corresponding component 12 with the corresponding
• FIG. 3 shows the component assembly 10 according to FIG. 2 during a second state of the method for producing the assembly, in which a structure mask 22 is formed on the second electrode layer 18.
• the structure mask 22 is formed as a function of the determined phosphor amounts or the determined phosphor regions.
• pattern mask recesses 24 of the pattern mask 22 may be formed such that phosphor areas 26 are applied to the
• Structural recesses 24 correspond to the phosphor regions 26.
• the phosphor regions 26 can be different, for example different, large, long and / or wide.
• Phosphor areas 26 shown in Figure 3 is relatively large. However, the sizes and / or shapes of the phosphor regions 26 may in fact be significantly lower.
• Differences in the phosphor regions 26 result from the differences in the properties and thus from the individual component properties of the individual components 12.
• the pattern mask 22 may be first made and then placed on the component assembly 10.
• the pattern mask 22 can be formed directly on the component composite 10.
• pattern mask 22 may comprise a photolithographically patternable material.
• the photolithographically structurable material can be applied for example in the form of a lacquer and / or in the form of a film on the component composite 10, then depending on the
• Characteristics of the devices 12 are represented, for example, laser-exposed, and subsequently, in a lift-off process the
• Structure mask 22 are removed, depending on which type of photolithographically structurable material is used.
• the pattern mask 22 in a Printing method for example, in an ink-jet printing process, are applied to the component assembly 10.
• FIG. 4 shows the component assembly 10 according to FIG. 2 in a third state during the method for producing the assembly. Over the phosphor areas 26 and in the
• Structural recesses 24 are the phosphor layers, for example first phosphor layers 28, formed.
• the first phosphor layers 28 can be introduced into the structural recesses 24, for example by means of doctoring.
• the material of the first phosphor layers 28 can be introduced into the structural recesses 24, for example by means of doctoring.
• the material of the first phosphor layers 28 can be introduced into the structural recesses 24, for example by means of doctoring. Alternatively, the material of the first
• Phosphor areas 26 and the pattern mask 22 are applied, cured and / or dried and subsequently partially removed.
• first phosphor layers 28 depend on their thickness, whose surface is parallel to the phosphor regions 26 and of the concentration of the phosphors in the
• the degree of conversion is thus determined by the size of the surface parallel to the phosphor regions 26 and consequently the size of the structural recesses 24.
• Conventional phosphors are, for example, garnets or nitrides, silicates, nitrides, oxides, phosphates, borates, oxynitrides, sulfides, selenides, aluminates, tungstates, and halides of aluminum, silicon, magnesium, calcium, barium, strontium, zinc, cadmium, manganese, indium, Tungsten and others
• Transition metals or rare earth metals such as yttrium,
• Gadolinium or lanthanum with an activator such as Example copper, silver, aluminum, manganese, zinc, tin, lead, cerium, terbium, titanium, antimony or europium are doped.
• the phosphor is an oxidic or (oxi-) nitride phosphor such as
• Yttrium Aluminum Garnet Cerium (YAG: Ce) or CaAlSiN3: Eu.
• particles with light-scattering properties and / or auxiliaries may be included.
• Excipients include surfactants and organic solvents.
• Examples of light scattering particles are gold,
• Fig. 5 shows the component composite 10 in a fourth
• the structure mask 22 can be removed, for example, by means of a lift-off method, for example by means of an etching process.
• the components 12 form together with the corresponding first phosphor layers 28 a plurality of assemblies and together form an assembly group. Subsequently, the individual modules, for example, along the dividing lines 20 are separated. Alternatively, several of the modules can be combined to form a common module.
• Each assembly has an individual combination of device 12 with device-individual properties and of the corresponding first phosphor layer 28, wherein the same color location can be achieved by means of each of the modules.
• Fig. 6 shows a sectional view of a
• phosphor layers 28 may be incorporated in the
• Drawing plane be formed strip-shaped. Furthermore, non-drawn cross connections may additionally exist between the first phosphor layers 28, by means of which polygonal, for example rectangular, for example square, or rounded, for example oval or circular, first phosphor layers 28 are formed in plan view.
• the second assembly from the right shown in FIG. 6 does not have a first phosphor layer 28.
• Component 12 have been found that by means of this device 12, the desired color location is independent of the coatable first phosphor layer 28 is not achievable. For example, the corresponding component may not work or within a given
• the corresponding module can be disposed of without this Luminescent material is wasted.
• the corresponding component 12 can be supplied to another use without a first phosphor layer 28 or with another phosphor layer (not shown), for example in the form of a small plate.
• Luminescent layer 28 covered.
• Fig. 7 shows a sectional view through a
• Phosphor layers 30, are formed. The first
• phosphor layers 28 may comprise a different material than the second phosphor layers 30.
• the first phosphor layers 28 may comprise different phosphors than the second ones
• the first phosphor layers 28 may have the phosphors in a different concentration than the second
• Phosphor layers 30 This can help to achieve a different desired color location or to set the desired color more precise.
• the first phosphor layers 28 may, for example, in
• the shape of the second phosphor layers 30 is then predetermined by the shape of the cavities, so that the second phosphor layers 30 are accordingly roundish, for example circular or oval, or polygonal,
• the material of the second phosphor layers 30 may
• the material of the second phosphor layers 30 may be applied so that the second phosphor layers 30 from the first phosphor layers 28 project convexly outward, as in the second assembly of shown in FIG left, or concave inward, as in the in Figure 7
• the components 12 may have far more than the layers shown according to conventional LEDs.
• the components 12, not shown embedded electronic components such as capacitors, transistors ect. exhibit. Further, for applying the pattern mask 22 and / or the phosphor layers 28, 30, other suitable methods than those mentioned can be used.

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• 2013
  • 2013-03-25 DE DE102013205179.4A patent/DE102013205179A1/de not_active Withdrawn
• 2014
  • 2014-03-19 WO PCT/EP2014/055546 patent/WO2014154551A1/de active Application Filing
  • 2014-03-19 US US14/780,470 patent/US9799795B2/en active Active
  • 2014-03-19 KR KR1020157030641A patent/KR102211753B1/ko active IP Right Grant
  • 2014-03-19 JP JP2016504580A patent/JP6177420B2/ja active Active
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