WO2014131220A1 - 有机薄膜晶体管及其制备方法和制备装置 - Google Patents

有机薄膜晶体管及其制备方法和制备装置 Download PDF

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Publication number
WO2014131220A1
WO2014131220A1 PCT/CN2013/073772 CN2013073772W WO2014131220A1 WO 2014131220 A1 WO2014131220 A1 WO 2014131220A1 CN 2013073772 W CN2013073772 W CN 2013073772W WO 2014131220 A1 WO2014131220 A1 WO 2014131220A1
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Prior art keywords
substrate
film transistor
organic semiconductor
thin film
semiconductor layer
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PCT/CN2013/073772
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English (en)
French (fr)
Inventor
邱龙臻
冯翔
王向华
刘则
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京东方科技集团股份有限公司
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Priority to US14/388,544 priority Critical patent/US9698364B2/en
Publication of WO2014131220A1 publication Critical patent/WO2014131220A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C1/00—Apparatus in which liquid or other fluent material is applied to the surface of the work by contact with a member carrying the liquid or other fluent material, e.g. a porous member loaded with a liquid to be applied as a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • Embodiments of the present invention relate to an organic thin film transistor, a method of fabricating the same, and a preparation apparatus. Background technique
  • An organic thin film transistor is a semiconductor device that replaces a conventional silicon semiconductor material with an organic semiconductor material.
  • Organic materials are difficult to process and have a higher yield than silicon-based materials.
  • organic materials can be prepared into a solution, and semiconductor devices are prepared under mild conditions, and thus have received more attention, and have become a core factor in the next generation display technology.
  • display companies such as Samsung and Sony have begun to develop integrated circuits based on organic thin film transistors.
  • Organic thin film transistors are also an indispensable technical component in foldable displays and panoramic display screens due to their flexible nature.
  • the dewetting patterning method refers to patterning of a semiconductor film by changing the surface energy of the substrate so that the organic solution of the semiconductor material selectively stays on the surface of the substrate.
  • This method can uniformly change the surface energy of the substrate, such as a contact angle difference of 5 in each region on the entire surface of the substrate.
  • it is possible to prepare micro-patterns with high precision, and has the characteristics of high preparation speed and mild preparation environment, which has attracted the attention of the academic community and has become the focus of research on semiconductor material patterning.
  • an organic solution of a semiconductor material is applied to the surface of a substrate mainly by a drop film standing method and a spin coating method.
  • the device fabricated by the drop film method has a fatal defect in the structure. Since the semiconductor material is prepared into a solution, the flowing solution cannot stay in a region with a low surface energy, and can only stay in a region with a high surface energy. However, there are many hydroxyl hydrophilic groups in the surface region with high surface energy. These groups can react with carriers to form carrier traps, which hinder the migration of carriers and make the device performance. It is greatly low, and there is a large hysteresis effect. Summary of the invention
  • Embodiments of the present invention provide an organic thin film transistor, a method of fabricating the same, and a preparation apparatus for reducing a difference in different positions on a surface of a substrate and improving the yield of the device.
  • An aspect of the invention provides a method of fabricating an organic thin film transistor, comprising: forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and a source/drain electrode on a substrate; forming the organic semiconductor layer to form a coating to form the organic semiconductor layer .
  • the linear velocities of all the contact points at which the substrate for forming the organic semiconductor layer is to be dissolved may be the same.
  • the linear velocity may be any one selected from the group consisting of 0.5 mm/s to 5 cm/s.
  • the line speed is 5mm/So
  • the method before the forming the organic semiconductor layer, the method further includes: forming a hydrophilic region and a hydrophobic region on the substrate.
  • the forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and a source/drain electrode on the substrate may include: forming a gate electrode on a surface of the substrate; covering the gate surface of the substrate on which the gate electrode is formed An insulating layer; an organic semiconductor layer is formed on the surface of the gate insulating layer; and a source/drain electrode is formed on the surface of the organic semiconductor layer.
  • the forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and a source/drain electrode on the substrate may include: forming a source/drain electrode on the surface of the substrate; and a surface of the substrate on which the active drain electrode is formed Covering the organic semiconductor layer; forming a gate insulating layer on the surface of the organic semiconductor layer; forming a gate electrode on the surface of the gate insulating layer.
  • a high molecular polymer insulating material may be dissolved in the solution.
  • the organic semiconductor material is 6,13-bis(triisopropylsilylethynyl)pentacene
  • the polymer insulating material is polydecyl acrylate or poly Styrene
  • the mass ratio of the 6,13-bis(triisopropylsilylethynyl)pentacene and the high molecular polymer insulating material is 1:1
  • the 6,13-bis (triisopropyl) The total mass percent concentration of the silylethyl block pentacene and the high molecular polymeric insulating material in the solution was 2%.
  • the solvent of the solution may be chlorobenzene or dichlorobenzene.
  • the substrate may be a silicon substrate, a glass substrate or a plastic substrate.
  • Another aspect of the present invention provides an organic thin film transistor including an organic semiconductor layer, wherein the organic semiconductor layer is prepared by the above-described method of preparing an organic thin film transistor.
  • the organic thin film transistor may include a gate electrode, a gate insulating layer, the organic semiconductor layer, and a source/drain electrode sequentially arranged on a substrate, or may include a source/drain electrode sequentially arranged on the substrate, the organic semiconductor layer, Gate insulating layer and gate electrode.
  • the method of fabricating the organic thin film transistor of the embodiment of the present invention is particularly suitable for preparing a large-sized patterned organic thin film transistor array.
  • Still another aspect of the invention relates to the use of the method of fabricating the organic thin film transistor in the manufacture of a display device.
  • Still another aspect of the present invention provides a preparation apparatus applied to the method of fabricating the organic thin film transistor, comprising: a squeegee and a movement control device, wherein the movement control device is for controlling a blade to be in contact with a substrate, and The blade is controlled to move relative to the substrate; a solution in which the organic semiconductor material for forming the organic semiconductor layer is dissolved is scraped on the substrate by the blade, and the line speed of all the contact points of the blade and the substrate is the same.
  • the movement control means may include: a holder for fixing the blade and a belt for placing the substrate.
  • the movement control device may include: a movable blade moving the blade and a platform on which the substrate is placed.
  • the squeegee may be a silicone rubber squeegee.
  • a drip port may be provided on a side of the blade facing the substrate.
  • the organic thin film transistor and the method for fabricating the same since the solution of the organic semiconductor material is moved on the substrate by the same lateral shear force by using a doctor blade process, the thickness of the solution on the surface of the substrate is uniform. Therefore, the devices in each row or column of the substrate dot matrix are formed in a synchronous and uniform manner, so that the crystal orientation of each row or column of organic semiconductor materials is not greatly different, the yield of the device is greatly improved, and the device is Performance uniformity is better.
  • FIG. 1 is a schematic structural view of a preparation apparatus corresponding to a method for preparing an organic thin film transistor of the present invention
  • FIG. 2 is a schematic structural view of a substrate for forming a hydrophilic region and a hydrophobic region according to a specific embodiment of a method for fabricating an organic thin film transistor of the present invention
  • Example 3 is a 20-fold polarized microscopic mirror image of an organic thin film transistor device prepared in Example 5 of the present invention
  • FIG. 4 is a transfer graph of a plurality of organic thin film transistor devices prepared in Embodiment 5 of the present invention
  • FIG. 5 is a bidirectional transfer graph of an optimum organic thin film transistor device prepared in Embodiment 5 of the present invention
  • FIG. 6 is an output graph of an optimal organic thin film transistor device prepared in Example 5 of the present invention
  • FIG. 8 is a bidirectional transfer graph of the organic thin film transistor device prepared in Comparative Example 1 of the present invention
  • FIG. 8 is a preparation of Comparative Example 1 of the present invention.
  • FIG. 9 is a polarizing microscope diagram of an organic thin film transistor device prepared in Comparative Example 2 of the present invention
  • FIG. 10 is a polarizing microscope diagram of another organic thin film transistor device prepared in Comparative Example 2 of the present invention; ;
  • Figure 11 is a transfer graph of a plurality of organic thin film transistor devices prepared in Comparative Example 2 of the present invention. Reference mark:
  • the inventors have proposed to use a phase separation of a semiconductor material and a polymer polymer insulating layer, and a polymer polymer interface modification layer is added between the semiconductor layer and the gate insulating layer to avoid
  • the carrier trap of the hydroxyl group on the gate insulating layer provides good device performance and greatly reduces the hysteresis effect.
  • this method when the film is prepared by the spin coating method, the linear velocity at the center of the substrate and the linear velocity at the edge and the corner of the substrate are largely different.
  • the film in this region is in a relatively stable rotation state during the crystallization process, and the formation of the thin film and the phase separation behavior of the semiconductor material and the high molecular polymer can be performed well.
  • the performance of the device is superior.
  • the film at the edge and corner of the substrate is in a state of revolving with a large linear velocity during crystallization. Such a state is unfavorable for the spreading of the semiconductor material, and the rotation causes the crystallographic direction of the semiconductor material to be disordered, and even forms a high and low unevenness.
  • the incomplete film the performance of the device is greatly reduced, and some devices have no performance, that is, the defect rate is high.
  • the linear velocity at the center of the substrate and the linear velocity at the edge of the substrate cause a large drop in the center and the edge, and the uniformity is poor, so that the crystallographic direction of the semiconductor material is disordered, resulting in device yield. low.
  • the embodiment of the present invention provides an organic thin film transistor, a preparation method thereof and a preparation device, in view of the technical problem that the organic film has a large crystal drop at different positions on the substrate when the spin coating method is used, resulting in a high defect rate of the product.
  • the coating process is used to move the solution of the organic semiconductor material on the substrate under the same transverse shearing force, and the solution is in the base.
  • the thickness of the surface of the sheet remains the same.
  • each row or column of devices is formed synchronously. Therefore, the crystal orientation of each row or column of small molecule organic semiconductor materials is not much different, which greatly improves the device collection. rate.
  • a method of fabricating an organic thin film transistor according to an embodiment of the present invention includes: forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and a source/drain electrode on a substrate; and forming the organic semiconductor layer by step coating to form the organic semiconductor layer .
  • the prepared solution is scraped on the substrate by a doctor blade process, and the squeegee may be smeared on the substrate by moving in a straight line, or may be rotated on the substrate by using a squeegee.
  • the squeegee makes the transverse shear force of the solution on the substrate uniform, and the thickness of the solution is uniform, so that each device is in the same state; the method avoids the solution from the spin coating process.
  • the difference in edge and center of the substrate caused by the out-and-out solution is improved, and the yield of the organic thin film transistor device is improved.
  • the line speeds of all the contact points of the blade and the substrate are the same.
  • the line speeds of all the contact points of the squeegee and the substrate are the same, when the squeegee is smeared on the surface of the substrate, the residence time of each device on the substrate is uniform, and Good uniformity of the coating is ensured, and the yield of the organic thin film transistor device is improved.
  • the linear velocity may be any one selected from the group consisting of 0.5 mm/s to 5 cm/s, and preferably, the linear velocity is 5 mm/So.
  • the travel speed of the scraper should not be too fast.
  • the speed will affect the crystallization performance of the organic solution sprayed onto the substrate, and the speed should not be too slow. Too slow to affect the production efficiency. Therefore, you can choose 0.5mm/
  • the organic solution is applied to the substrate at a speed of s ⁇ 5 cm/s, for example, at a speed of 5 mm/s.
  • the organic semiconductor layer may further include: forming a hydrophilic region and a hydrophobic region on the substrate.
  • a substrate is a bottom gate structure, that is, a gate electrode and a gate insulating layer have been prepared before preparing an organic semiconductor layer; and a baffle-on substrate is used on a substrate on which a gate insulating layer is prepared.
  • the surface is treated, for example, the surface of the substrate is treated by an ultraviolet ozone cleaner, and a hydrophilic region is formed on the surface of the substrate corresponding to the permeation region of the baffle, and a hydrophobic region is formed on the surface of the substrate corresponding to the opaque region of the baffle.
  • the other substrate is a top gate structure, that is, a source/drain electrode has been prepared before the preparation of the organic semiconductor layer, and the surface of the substrate is treated with a baffle on the substrate on which the active drain electrode is prepared, such as by an ultraviolet ozone cleaner.
  • the surface of the substrate forms a hydrophilic region on the surface of the substrate corresponding to the transmissive region of the baffle, and a hydrophobic region is formed on the surface of the substrate corresponding to the opaque region of the baffle.
  • the prepared organic solution is applied onto the substrate by a doctor blade process, and the solution stays in the hydrophilic region of the substrate to form an organic semiconductor layer.
  • the solution has the same residence time in the hydrophilic region of each row or column of the substrate, the shearing force is uniform, and each device is in the same state, avoiding the edge and center of the substrate during the spin coating process.
  • the difference is improved in the yield of organic thin film transistor devices.
  • the forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and a source/drain electrode on a substrate includes: forming a gate electrode on a surface of the substrate; covering a gate insulating layer on a surface of the substrate on which the gate electrode is formed; and a gate insulating layer An organic semiconductor layer is formed on the surface; a source/drain electrode is formed on the surface of the organic semiconductor layer.
  • the organic semiconductor layer of the organic thin film transistor of the bottom gate structure is formed by scraping.
  • the forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and a source/drain electrode on the substrate includes: forming a source/drain electrode on a surface of the substrate; covering an organic semiconductor layer on a surface of the substrate on which the active drain electrode is formed; A gate insulating layer is formed on the surface of the organic semiconductor layer; a gate electrode is formed on the surface of the gate insulating layer.
  • the organic semiconductor layer of the organic thin film transistor of the top gate structure is formed by scraping.
  • a polymer polymer insulating material may be dissolved in the solution.
  • the organic thin film transistor of the bottom gate structure is taken as an example, and the organic mixed solution of the prepared organic semiconductor material and the high molecular polymer insulating material is scraped on the substrate by a doctor blade process, and the mixed solution stays in the substrate.
  • the hydrophilic region of the substrate is subjected to phase separation under shearing force to form an organic semiconductor film, that is, an organic semiconductor layer and a high molecular polymer insulating layer.
  • a polymer polymer insulating layer is formed between the organic semiconductor layer and the gate insulating layer, thereby avoiding the carrier trap of the hydroxyl group on the gate insulating layer, and the hysteresis effect is greatly reduced.
  • the organic semiconductor material of the embodiment of the present invention may be, for example, 6,13-bis(triisopropylsilylethane) pentacene (TIPS-pentacene), 6, 13-bis(trialkylsilylethynyl).
  • TIPS-pentacene 6, 13-bis(trialkylsilylethynyl).
  • Bithiophene oxime and its derivatives alkyl-substituted benzothienobenzothiophenes or alkyl-substituted hexathiophenes ( ⁇ -6 ⁇ ) and the like.
  • the high molecular polymer insulating material may be, for example, polydecyl acrylate ( ⁇ ), polybutyl methacrylate, polyacrylic acid acrylate, polystyrene (PS), poly a-fluorenyl styrene (PMS).
  • the technical solution of the embodiments of the present invention can be used not only for the preparation of an organic thin film transistor in a conventional substrate, but also for the preparation of an organic thin film transistor in a flexible substrate or an irregularly shaped substrate. For flexible substrates, the flexible substrate is simply placed against the platform on which the substrate is placed, and the squeegee is knife coated on the surface of the flexible substrate.
  • a larger-sized squeegee having a length greater than or equal to the maximum width of the irregular substrate can be used.
  • the length of the squeegee can be adjusted to be greater than or equal to the longest side of the trapezoid, so that the squeegee can be organically dissolved; and the cover is applied to the entire surface of the substrate.
  • the organic semiconductor material is 6,13-bis(triisopropylsilylethynyl)pentacene
  • the polymer insulating material is polymethyl methacrylate or polystyrene.
  • the total mass percent concentration of pentabenzene and high molecular polymer insulating material in the solution was 2%.
  • the solute in the solution is, for example, an organic semiconductor material and a high molecular polymer insulating material.
  • the organic semiconductor material is used to form an organic semiconductor layer of an organic thin film transistor
  • the high molecular polymer insulating material is used to form an interface modification layer between the organic semiconductor layer of the organic thin film transistor and the gate insulating layer.
  • the organic semiconductor material is 6,13-bis(triisopropylsilylethynyl)pentacene, ie, Tips-pentacene.
  • the high molecular polymer insulating material may be polydecyl methacrylate.
  • Tips-pentacene and polymer insulation materials are 1:1, and Tips-pentacene and polymer insulation materials are The solution prepared when the total mass percentage concentration in the solution is 2% can achieve the desired technical effect.
  • the solvent of the solution is chlorobenzene or dichlorobenzene.
  • the solvent of the solution is used for dissolving the organic semiconductor material and the high molecular polymer insulating material, and it is required to satisfy the solubility of the solvent and to be easily volatilized when the solvent is removed.
  • the solvent may be chlorobenzene or dichlorobenzene; for example, the dichlorobenzene may be o-dichlorobenzene, m-dichlorobenzene or p-dichlorobenzene.
  • the substrate is a silicon substrate, a glass substrate or a plastic substrate.
  • the substrate of the embodiment of the present invention may select a substrate of different substrates, as long as the organic semiconductor layer of the substrate requiring preparation of the organic thin film transistor can be prepared by using the method for preparing the organic thin film transistor of the present invention, and the preferred substrate is a silicon substrate. , glass substrate or plastic substrate.
  • the embodiment of the invention further relates to an organic thin film transistor comprising a gate electrode, a gate insulating layer, an organic semiconductor layer and a source/drain electrode arranged in sequence, wherein the organic semiconductor layer passes through the above
  • the preparation method of the thin film transistor is prepared.
  • the embodiment of the invention further relates to another organic thin film transistor comprising a source-drain electrode, an organic semiconductor layer, a gate insulating layer and a gate electrode which are sequentially arranged, wherein the organic semiconductor layer is prepared by the above-described method for preparing an organic thin film transistor.
  • the organic thin film transistor prepared by the above method includes a gate electrode, a gate insulating layer, an organic semiconductor layer, and a source/drain electrode which are sequentially arranged, wherein the organic semiconductor layer is prepared by the above Preparation of an organic thin film transistor.
  • the OTFT may further include a high molecular polymer insulating material layer between the organic semiconductor layer and the gate insulating layer.
  • the insulating material is layered to form an organic semiconductor layer and a high molecular polymer insulating layer, respectively.
  • the small molecule organic semiconductor material is, for example, Tips-pentacene
  • the high molecular polymer insulating material is, for example, polydecyl methacrylate or polystyrene
  • the high molecular polymer insulating layer is interposed between the organic semiconductor layer and the gate insulating layer.
  • organic thin film transistor such as the gate electrode, the gate insulating layer, and the source/drain electrodes can be prepared by using an existing organic thin film transistor fabrication method.
  • organic thin film transistor of a top gate structure can also be prepared by the above method.
  • Embodiments of the present invention also relate to the use of the above-described method of fabricating an organic thin film transistor in the manufacture of a display device.
  • the display device may be, for example, a product or a component having any display function such as a liquid crystal panel, an electronic paper, an OLED panel, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, or the like.
  • the embodiment of the invention further relates to a preparation device applied to the preparation method of the organic thin film transistor, comprising: a squeegee and a movement control device, wherein the movement control device is used for controlling the squeegee to contact with the substrate, and controlling the scraping
  • the sheet is moved relative to the substrate; a solution in which the organic semiconductor material for forming the organic semiconductor layer is dissolved is scraped onto the substrate by a doctor blade, and the line speeds of all the contact points of the blade and the substrate are the same.
  • the preparation device of the embodiment of the present invention applied to the preparation method of the organic thin film transistor can be various, and the following two devices are taken as an example for illustration.
  • a preparation apparatus includes a squeegee 1, a holder for fixing a squeegee (not shown), and a conveyor belt 2 on which the substrate 3 is placed.
  • the working principle of the device is as follows.
  • the substrate 3 is placed on the conveyor belt 2, and the squeegee 1 corresponding to the substrate 3 is mounted on the holder, for example, the angle between the squeegee 1 and the substrate 3 is 30° ⁇ 45°, if the size of the substrate is, for example, 2cm ⁇ 2cm, the side length of the selected squeegee in contact with the substrate is greater than or equal to 2cm, and the substrate 3 is adjacent to the squeegee 1 While a sufficient amount of the desired solution 4 is dropped, the stepping motor associated with the conveyor belt 2 is activated to move the substrate 3 toward the squeegee 1 by the conveyor belt 2, and the squeegee 1 is used to smear the solution 4 at the edge of the substrate 3. Until the solution 4 is knife coated onto the entire substrate.
  • the squeegee 1 can be mounted on the holder by a variety of mechanical means.
  • Embodiments of the present invention are also directed to another preparation apparatus including a squeegee, a mover for moving the squeegee, and a platform on which the substrate is placed.
  • the working principle of the drawdown device is as follows. The substrate does not move, the substrate is placed on the platform, and the squeegee can be moved along with the mover controlling the movement of the squeegee to complete the squeegee process on the stationary substrate.
  • the squeegee is a silicone rubber squeegee.
  • the silicone rubber scraper has a smooth surface, a hard material, and a low surface energy, which is not easy to coat the solution used for the coating, and is suitable as a scraping blade.
  • a drip port is provided on one side of the squeegee facing the substrate.
  • a drip port can be provided at the bottom of the squeegee to allow the solution to flow out through the drip port.
  • a plurality of drip ports such as three, four or six, can be provided.
  • the entire blank substrate was treated with trichloro(1H,1H,2H,2H-heptadecafluorodecyl)silane vapor under argon to form a monolayer, which was covered with a baffle having a pre-designed pattern.
  • the baffle and substrate are processed into an ultraviolet ozone cleaning apparatus. As shown in Fig. 2, a hydrophilic region 5 is formed corresponding to the baffle transmission region, and a hydrophobic region 6 is formed corresponding to the baffle impervious region to obtain a substrate having a surface selective gradient of an organic solution.
  • excellent solvents such as chlorobenzene, dichlorobenzene, etc.
  • the mixture is filtered and obtained to obtain a mixed solution of a small molecule organic semiconductor material and a polymer polymer insulating material.
  • Small molecule organic semiconductor materials may be selected from 6,13-bis(triisopropylsilylethynyl)pentacene, 6,13-bis(trialkylsilylethynyl)bisthiophene and its derivatives, alkyl Substituted benzothienobenzothiophene or alkyl-substituted hexathiophene ( ⁇ -6 ⁇ ), etc.; high molecular polymer insulating material may be selected from polyacrylic acid decyl acrylate (PMMA), polybutyl methacrylate, Polymethyl acrylate, polystyrene (PS), poly(X-methylstyrene (PMS), etc.
  • PMMA polyacrylic acid decyl acrylate
  • PS polybutyl methacrylate
  • PS polystyrene
  • PMS poly(X-methylstyrene
  • Tips-pentacene and polystyrene (PS) with a mass ratio of 1:1 were dissolved in chlorobenzene at 40 ° C, and allowed to stand and filtered to form a total of Tips-pentacene and polystyrene.
  • a 2% mixed solution with a concentration of 2% titrate a sufficient amount of solution at the edge of the silicon substrate, and slowly and uniformly apply the solution on the silicon substrate at a rate of 0.5 mm/s to complete selective patterning; vacuum environment It is fully dried and prepared into a film.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-100 nm is prepared by thermal evaporation as a source-drain electrode.
  • Tips-pentacene and polystyrene (PS) with a mass ratio of 1:1 were dissolved in chlorobenzene at 40 ° C, and allowed to stand and filter to make a total mass of Tips-pentacene and polystyrene.
  • the vacuum environment was sufficiently dried to prepare a film.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-100 ⁇ is prepared by thermal evaporation as a source-drain electrode.
  • Tips-pentacene and polystyrene (PS) with a mass ratio of 1:1 were dissolved in dichlorobenzene at 40 ° C, and allowed to stand and filtered to form Tips-pentacene and polystyrene.
  • a mixed solution with a total mass percent concentration of 2% titrate a sufficient amount of solution at the edge of the silicon substrate, and slowly and uniformly apply the solution on the silicon substrate at a rate of 1 cm/s to complete selective patterning; Dry to prepare a film.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-100 ⁇ is prepared by thermal evaporation as a source-drain electrode.
  • Tips-pentacene and polystyrene (PS) with a mass ratio of 1:1 were dissolved in dichlorobenzene at 40 ° C, and allowed to stand and filtered to form Tips-pentacene and polystyrene.
  • a mixed solution with a total mass concentration of 2% titrate a sufficient amount of solution at the edge of the silicon substrate, and slowly and uniformly apply the solution on the silicon substrate at a speed of 5 mm/s to complete selective patterning; Dry to prepare a film.
  • Metal block The plate covers the self-assembled device, and a gold electrode having a thickness of 50-100 ⁇ is prepared by thermal evaporation as a source-drain electrode.
  • Tips-pentacene and polymethyl methacrylate (PMMA) in a mass ratio of 1:1 were dissolved in dichlorobenzene at 40 ° C, and allowed to stand and filtered to form Tips-pentacene and polyphenylene.
  • the film is sufficiently dried in a vacuum to prepare a film.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-100 nm is prepared by a thermal evaporation method as a source-drain electrode.
  • Tips-pentacene and polymethyl methacrylate (PMMA) in a mass ratio of 1:1 were dissolved in dichlorobenzene at 40 ° C, and allowed to stand and filtered to form Tips-pentacene and polyphenylene.
  • a total mass concentration of ethylene of 2% mixed solution titration of a sufficient amount of solution at the edge of the silicon substrate, the solution is slowly and uniformly coated on the silicon substrate at a rate of 1 cm / s, complete selective patterning; vacuum
  • the environment is sufficiently dry to prepare a film.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-100 nm is prepared by a thermal evaporation method as a source-drain electrode.
  • Tips-pentacene and polystyrene (PS) with a mass ratio of 1:1 were dissolved in chlorobenzene at 40 ° C, and allowed to stand and filtered to obtain the total mass of Tips-pentacene and polystyrene.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-100 nm is prepared by thermal evaporation as a source-drain electrode.
  • Tips-pentacene and polystyrene (PS) with a mass ratio of 1:1 were dissolved in chlorobenzene at 40 ° C, and allowed to stand and filtered to form a total of Tips-pentacene and polystyrene. a 2% by mass mixed solution; titrate a sufficient amount of solution on the edge of the plastic substrate.
  • the plastic substrate can be a polyester substrate (PET substrate), and the solution is slowly and evenly distributed at a rate of 0.5 mm/s. It is sprayed on a plastic substrate to complete selective patterning; the vacuum environment is sufficiently dried to prepare a film.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-1 00 nm is prepared by thermal evaporation as a source/drain electrode. Comparative example 1
  • the pure Tips-pentacene was dissolved in dichlorobenzene at 40 ° C and allowed to stand to prepare a solution having a mass percentage of 2%. It was spin-coated on the pretreated substrate at a rate of 1000 r/min to complete selective patterning; the vacuum environment was sufficiently dried to prepare a film.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-100 nm is prepared by hot evaporation as a source/drain electrode.
  • Tips-pentacene and polymethyl methacrylate (PMMA) with a mass ratio of 1:1 were dissolved in dichlorobenzene at 80 °C, and allowed to stand and filtered to prepare a solution with a total mass concentration of 2%. . It was spin-coated on the pretreated substrate at a rate of 3500 r/min to complete selective patterning; the vacuum environment was sufficiently dried to prepare a film.
  • the metal baffle covers the self-assembled device, and a gold electrode having a thickness of 50-100 nm is prepared by a thermal evaporation method as a source-drain electrode.
  • Fig. 3 is a 20-times enlarged polarizing microscope image of the organic thin film transistor device prepared in Example 5. It can be seen that in the channel, Tips-pentacene is arranged in a grid-like arrangement, which indicates that the crystallinity of Tips-pentacene is good.
  • FIG. 5 is a bidirectional transfer graph of the optimal device prepared in Example 5, and it can be seen that there is substantially no hysteresis effect;
  • FIG. 6 is an implementation.
  • the 20x magnification polarization microscope images of the single organic thin film transistor devices prepared in Examples 1 to 4 and Examples 6 to 8 respectively are similar to those in FIG. 3, which also shows that the crystallinity of Tips-pentacene is good, and here is not- As described and measured, the yields of the plurality of organic thin film transistor devices prepared in Examples 1 to 4 and Examples 6 to 8, respectively, were 92%, 86%, 91%, 94%, 90%, 91%, and 84%. It can be seen that the yield of the device obtained according to the embodiment of the present invention is high, and the device performance is relatively uniform.
  • FIG. 7 is a bidirectional transfer graph of the organic thin film transistor device prepared in Comparative Example 1
  • FIG. 8 is an output graph of the organic thin film transistor device prepared in Comparative Example 1. It can be seen that the device of this comparative example has poor performance, ohmic contact is not good, and there is a large hysteresis effect.
  • organic thin film transistors were prepared by spin coating. During the rotation, they were different due to the difference in the respective line velocities, close to the center of the substrate. The device and crystallinity are better, but the devices at the edges and corners of the substrate are quite different.
  • FIG. 9 is a polarizing microscope of a non-uniform device in Comparative Example 2. The bright area in the lower left corner is where Tips-pentacene is deposited, while the crystallization of Tips-pentacene in the upper portion of the figure is far from bright.
  • Fig. 10 is a polarizing micrograph of a disordered crystallographic device prepared in Comparative Example 2, and it can be seen that first, the organic semiconductor material is crystallized unevenly, and secondly, there is no so-called crystal directionality in the bright region and the upper region in the figure.
  • the device and worst device span is greater than three orders of magnitude.

Abstract

公开了一种有机薄膜晶体管及其制备方法和一种制备装置。所述有机薄膜晶体管的制备方法包括：在基片上形成栅电极、栅绝缘层、有机半导体层和源漏电极；其中，形成有所述有机半导体层的步骤包括：将溶解有用于形成所述有机半导体层的有机半导体材料的溶液进行刮涂形成所述有机半导体层。该制备方法可避免采用旋涂工艺时受到向心力影响而导致基片边缘和中心的差异性，提高了有机薄膜晶体管器件的良率。

Description

有机薄膜晶体管及其制备方法和制备装置 技术领域
本发明的实施例涉及一种有机薄膜晶体管及其制备方法和一种制备装 置。 背景技术
有机薄膜晶体管（ Organic Thin Film Transistor, OTFT )是一种用有机半 导体材料代替传统硅半导体材料的半导体器件。 有机材料相对于硅基材料加 工困难、 成 艮高。 但是， 有机材料可以制备成溶液， 在温和的条件下制备 半导体器件， 因而受到更多的关注， 已经成为下一代显示技术中的核心因素。 目前三星、索尼等多家显示企业已着手研发基于有机薄膜晶体管的集成电路。 有机薄膜晶体管也因其柔性特点， 而成为可折叠显示器和全景显示屏幕中不 可缺少的技术成分。
由于有机半导体薄膜通常都具有较大的体电导， 所以如果集成电路中的 薄膜晶体管器件的有机半导体薄膜互相连接， 则一方面容易在相邻器件之间 产生串扰， 另一方面也会使器件的漏电流大大增加， 导致开关电流比降低。 这些问题的存在严重阻碍了 OTFT 器件在大面积的阵列及集成电路中的应 用。
去润湿图案化方法是指通过改变基片的表面能， 从而让半导体材料的有 机溶液在基片的表面上有选择性的停留， 实现半导体薄膜图案化。 这种方法 可以均匀地改变基片的表面能， 如基片整体表面上各个区域的接触角差值在 5。 以内， 可以制备精度较高的微图案， 并且具备制备速度快、 制备环境温 和等特点而受到学术界的重视， 成为了研究半导体材料图案化的焦点。
目前主要釆用滴膜静置法和旋涂法将半导体材料的有机溶液涂覆至基片 表面。 滴膜静置法制作的器件在结构上存在致命的缺陷， 因为半导体材料制 备成溶液后， 流动的溶液无法停留在表面能低的区域， 只能停留在表面能很 高的区域。 但表面能很高的基片区域存在很多的羟基亲水基团， 这些基团可 以与载流子反应， 形成载流子陷阱， 阻碍了载流子的迁移， 使得器件的性能 大大的 低， 并存在 ί艮大的迟滞效应。 发明内容
本发明的实施例提供了一种有机薄膜晶体管及其制备方法和一种制备装 置， 用以减少基片表面不同位置的落差， 提高器件的收率。
本发明的一个方面提供了有机薄膜晶体管的制备方法， 包括： 在基片上 形成栅电极、 栅绝缘层、 有机半导体层和源漏电极； 形成所述有机半导体层 进行刮涂形成所述有机半导体层。
例如， 在该方法之中， 在所述将溶解有用于形成所述有机半导体层的有 基片的所有接触点的线速度可以相同。
例如， 在该方法之中， 所述线速度可以是选自 0.5mm/s〜5cm/s中的任一 速度。 例如， 所述线速度为 5mm/So
例如， 在该方法之中， 在所述形成有机半导体层之前还可以包括： 在基 片上形成亲水区域和疏水区域。
例如， 在该方法之中， 所述在基片上形成栅电极、 栅绝缘层、 有机半导 体层和源漏电极可以包括： 在基片表面形成栅电极； 在形成有栅电极的基片 表面覆盖栅绝缘层； 在栅绝缘层表面形成有机半导体层； 在有机半导体层表 面形成源漏电极。
例如， 在该方法之中， 所述在基片上形成栅电极、 栅绝缘层、 有机半导 体层和源漏电极可以包括： 在基片表面形成源漏电极； 在形成有源漏电极的 基片表面覆盖有机半导体层； 在有机半导体层表面形成栅绝缘层； 在栅绝缘 层表面形成栅电极。
例如，在该方法之中，所述溶液中还可以溶解有高分子聚合物绝缘材料。 例如， 在该方法之中， 所述有机半导体材料为 6,13-双（三异丙基硅烷基 乙炔基）并五苯， 所述高分子聚合物绝缘材料为聚曱基丙烯酸曱酯或聚苯乙 烯， 所述 6,13-双（三异丙基硅烷基乙炔基）并五苯和高分子聚合物绝缘材料 的质量比为 1: 1 , 所述 6，13-双（三异丙基硅烷基乙块基）并五苯和高分子聚 合物绝缘材料在所述溶液中的总质量百分浓度为 2%。 例如， 在该方法之中， 所述溶液的溶剂可以为氯苯或二氯苯。
例如， 在该方法之中， 所述基片可以为硅基片、 玻璃基片或塑料基片。 本发明的另一个方面提供了一种有机薄膜晶体管， 包括有机半导体层， 其中， 所述有机半导体层通过上述的有机薄膜晶体管的制备方法制备。
例如， 该有机薄膜晶体管可以包括在基片上依次排列的栅电极、 栅绝缘 层、 所述有机半导体层和源漏电极， 或者可以包括在基片上依次排列的源漏 电极、 所述有机半导体层、 栅绝缘层和栅电极。
本发明实施例的有机薄膜晶体管的制备方法特别适合制备大尺寸图案化 的有机薄膜晶体管阵列。
本发明的再一个方面还涉及所述有机薄膜晶体管的制备方法在显示装置 制造中的应用。
本发明的再一个方面提供了应用于所述的有机薄膜晶体管的制备方法的 制备装置， 包括： 刮板和移动控制装置， 其中， 所述移动控制装置用于控制 刮板与基片接触， 并控制刮板相对基片移动； 通过刮板将溶解有用于形成有 机半导体层的有机半导体材料的溶液刮涂在基片上， 并使刮板与基片的所有 接触点的线速度相同。
例如， 在该制备装置之中， 所述移动控制装置可以包括： 固定刮板的固 定器和放置基片的传送带。
例如， 在该制备装置之中， 所述移动控制装置可以包括： 移动刮板的移 动器和放置基片的平台。
例如， 在该制备装置之中， 所述刮板可以为硅橡胶刮板。
例如， 在该制备装置之中， 在刮板朝向基片的一面设置可以有滴液口。 在本发明实施例的有机薄膜晶体管及其制备方法中，由于采用刮涂工艺， 有机半导体材料的溶液在同样的横向剪切力的作用下在基片上移动， 溶液在 基片表面的厚度一致， 因此， 在基片点阵每行或每列的器件是以同步一致的 方式形成的， 所以每行或每列有机半导体材料的结晶方向差异不大， 大大提 高了器件的收率， 并且器件的性能均一性较好。 附图说明
为了更清楚地说明本发明实施例的技术方案， 下面将对实施例的附图作 简单地介绍，显而易见地， 下面描述中的附图仅仅涉及本发明的一些实施例， 而非对本发明的限制。
图 1为本发明有机薄膜晶体管的制备方法对应的制备装置结构示意图； 图 2为本发明有机薄膜晶体管的制备方法的具体实施例的形成亲水区域 和疏水区域的基片结构示意图；
图 3为本发明实施例 5制备的一个有机薄膜晶体管器件的 20倍偏光显微 镜图；
图 4为本发明实施例 5制备的多个有机薄膜晶体管器件的转移曲线图； 图 5为本发明实施例 5制备的最优有机薄膜晶体管器件的双向转移曲线 图；
图 6为本发明实施例 5制备的最优有机薄膜晶体管器件的输出曲线图； 图 Ί为本发明对比例 1制备的有机薄膜晶体管器件的双向转移曲线图； 图 8为本发明对比例 1制备的有机薄膜晶体管器件的输出曲线图； 图 9为本发明对比例 2制备的一个有机薄膜晶体管器件的偏光显微镜图； 图 10为本发明对比例 2制备的另一个有机薄膜晶体管器件的偏光显微镜 图；
图 11为本发明对比例 2制备的多个有机薄膜晶体管器件的转移曲线图。 附图标记：
1-刮板 2-传送带 3-基片 4-溶液 5-亲水区域 6-疏水区域 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚， 下面将结合本发 明实施例的附图， 对本发明实施例的技术方案进行清楚、 完整地描述。 显然， 所描述的实施例是本发明的一部分实施例， 而不是全部的实施例。 基于所描 述的本发明的实施例， 本领域普通技术人员在无需创造性劳动的前提下所获 得的所有其他实施例， 都属于本发明保护的范围。
除非另作定义， 此处使用的技术术语或者科学术语应当为本发明所属领 域内具有一般技能的人士所理解的通常意义。 本发明专利申请说明书以及权 利要求书中使用的 "第一" 、 "第二" 以及类似的词语并不表示任何顺序、 数量或者重要性， 而只是用来区分不同的組成部分。 同样， "一个" 、 "一" 或 "该" 等类似词语也不表示数量限制， 而是表示存在至少一个。 "包括" 或者 "包含" 等类似的词语意指出现在 "包括" 或者 "包含" 前面的元件或 者物件涵盖出现在 "包括"或者 "包含"后面列举的元件或者物件及其等同， 并不排除其他元件或者物件。 "连接" 或者 "相连" 等类似的词语并非限定 于物理的或者机械的连接， 而是可以包括电性的连接， 不管是直接的还是间 接的。 "上" 、 "下" 、 "左" 、 "右" 等仅用于表示相对位置关系， 当被 描述对象的绝对位置改变后， 则该相对位置关系也可能相应地改变。
针对现有技术存在迟滞效应的缺陷， 发明人曾提出利用半导体材料与高 分子聚合物绝缘层的相分离， 在半导体层与栅绝缘层之间增加了高分子聚合 物界面修饰层， 从而避开了栅绝缘层上羟基基团的载流子陷阱， 得到了很好 的器件性能， 并且大大降低了迟滞效应， 对此请参见中国专利申请第 201210102398.0号， 将其全文通过引用的方式结合于此。 但是， 此种方法在 实施过程中， 在采用旋涂方法制备薄膜时， 基片中心处的线速度和基片边缘 与角落处的线速度差异很大。 由于基片中心处的线速度较小， 这一区域的薄 膜在结晶的过程中处于较稳定的自转状态， 薄膜的形成和半导体材料与高分 子聚合物的相分离行为能较好地进行， 因而器件的性能较优。 但是， 在基片 边缘和角落处的薄膜在结晶的过程中处于线速度很大的公转状态， 这样的状 态对半导体材料的铺展不利， 旋转会使半导体材料的结晶方向杂乱无章， 甚 至会形成高低不平的不完整薄膜， 器件性能大大下降， 有的器件甚至没有性 能， 即坏点率很高。这样就使得基片中心和边缘的器件性能存在极大的落差， 器件收率低。 而且基片尺寸越大， 这种落差就越明显。 再一点， 旋涂法会将 大部分的原料溶液甩掉， 造成原材料浪费。 此外， 旋涂方法也 4艮难适用于柔 性基片。 综合以上几点因素， 这种制备方法目前还难以实现产业化应用。
上述技术中， 由于采用旋涂工艺， 基片中心的线速度和基片边缘的线速 度不同导致中心和边缘的落差很大， 均一度较差， 使半导体材料的结晶方向 杂乱无章， 导致器件收率低。
针对釆用旋涂方法时在基片不同位置有机薄膜结晶落差大， 导致产品高 不良率的技术问题， 本发明的实施例提供了一种有机薄膜晶体管及其制备方 法和一种制备装置。 在本发明实施例的技术方案中， 采用刮涂工艺， 使得有 机半导体材料的溶液在同样的横向剪切力的作用下在基片上移动， 溶液在基 片表面的厚度保持一致， 在基片点阵例如每行或每列的器件是同步形成的， 因此， 每行或每列小分子有机半导体材料的结晶方向差异不大， 大大提高了 器件的收率。
本发明一个实施例的有机薄膜晶体管的制备方法， 包括： 在基片上形成 栅电极、 栅绝缘层、 有机半导体层和源漏电极； 形成所述有机半导体层的步 刮涂形成所述有机半导体层。
在本发明实施例的技术方案中， 将配制好的溶液通过刮涂工艺刮涂在基 片上， 刮板可以采用沿直线移动的方式在基片上刮涂， 也可以采用刮板在基 片上旋转的方式刮涂， 在整个刮涂过程中， 刮板使得溶液在基片上的横向剪 切力一致， 溶液厚度一致， 从而每个器件所处的状态平等； 该方法避免了采 用旋涂工艺时溶液从内向外甩出溶液造成的基片边缘和中心的差异性， 提高 了有机薄膜晶体管器件的良率。
例如， 在所述将溶解有用于形成所述有机半导体层的有机半导体材料的 溶液进行刮涂形成所述有机半导体层的刮涂过程中， 刮板与基片的所有接触 点的线速度相同。
在本发明实施例的技术方案中， 由于刮板与基片的所有接触点的线速度 相同，则刮板在基片表面刮涂时，使溶液在基片上每个器件的停留时间一致， 更好地保证了刮涂的均匀性， 提高了有机薄膜晶体管器件的良率。
例如， 所述线速度可以是选自 0.5mm/s~5cm/s中的任一速度， 较佳的， 所述线速度为 5mm/So
刮涂时， 刮板的行进速度不宜太快， 速度太快将影响刮涂到基片上的有 机溶液的结晶性能， 而速度也不宜太慢， 太慢影响生产效率， 因此， 可以选 择 0.5mm/s~5cm/s的速度，例如选择 5mm/s的速度将有机溶液刮涂至基片上。
例如， 在形成有机半导体层之前还可以包括： 在基片上形成亲水区域和 疏水区域。
在本发明实施例中， 一种基片为底栅结构， 即在制备有机半导体层之前 已经制备了栅极和栅极绝缘层； 在制备有栅极绝缘层的基片上采用挡板对基 片表面进行处理， 如采用紫外臭氧清洗仪处理基片表面， 在基片表面对应挡 板的透过区形成亲水区域， 在基片表面对应挡板的不透过区形成疏水区域。 另一种基片为顶栅结构， 即在制备有机半导体层之前已经制备了源漏电极， 在制备有源漏电极的基片上采用挡板对基片表面进行处理， 如采用紫外臭氧 清洗仪处理基片表面， 在基片表面对应挡板的透过区形成亲水区域， 在基片 表面对应挡板的不透过区形成疏水区域。 将配制好的有机溶液通过刮涂工艺 刮涂在基片上， 溶液停留在基片的亲水区域， 形成有机半导体层。 在整个刮 涂过程中， 溶液在基片每行或每列的亲水区域停留时间一致， 剪切力一致， 每个器件所处的状态平等,避免了采用旋涂工艺时基片边缘和中心的差异性， 提高了有机薄膜晶体管器件的良率。
例如， 所述在基片上形成栅电极、 栅绝缘层、 有机半导体层和源漏电极 包括： 在基片表面形成栅电极； 在形成有栅电极的基片表面覆盖栅绝缘层； 在栅绝缘层表面形成有机半导体层； 在有机半导体层表面形成源漏电极。
在本发明实施例中， 底栅结构的有机薄膜晶体管的有机半导体层采用刮 涂的方式形成。
又例如， 所述在基片上形成栅电极、 栅绝缘层、 有机半导体层和源漏电 极包括： 在基片表面形成源漏电极； 在形成有源漏电极的基片表面覆盖有机 半导体层；在有机半导体层表面形成栅绝缘层；在栅绝缘层表面形成栅电极。
在本发明实施例中， 顶栅结构的有机薄膜晶体管的有机半导体层采用刮 涂的方式形成。
例如， 所述溶液中还可以溶解有高分子聚合物绝缘材料。
在本发明实施例中， 以底栅结构的有机薄膜晶体管为例， 将配制好的有 机半导体材料和高分子聚合物绝缘材料的有机混合溶液通过刮涂工艺刮涂在 基片上， 混合溶液停留在基片的亲水区域， 并在剪切力作用下完成相分离， 形成有机半导体薄膜， 即有机半导体层和高分子聚合物绝缘层。 这样， 在有 机半导体层和栅绝缘层之间形成了高分子聚合物绝缘层， 因而避开了栅绝缘 层上羟基基团的载流子陷阱， 大大降低了迟滞效应。
本发明实施例的有机半导体材料例如可以为 6,13-双（三异丙基硅烷基乙 块基）并五苯（ TIPS-pentacene ) 、 6, 13-双（三烷基硅烷基乙炔基）双噻吩蒽 及其衍生物、 烷基取代的苯并噻吩并苯并噻吩或烷基取代的六噻吩 ( α-6Τ ) 等。 高分子聚合物绝缘材料例如可以为聚曱基丙烯酸曱酯（ΡΜΜΑ ) 、 聚曱 基丙烯酸丁酯、 聚丙烯酸曱酯、 聚苯乙烯（PS )、 聚 a-曱基苯乙烯（PMS ) 。 本发明实施例的技术方案不仅可以用于普通的基片中有机薄膜晶体管的 制备， 也可以用于柔性基片或不规则形状的基片中有机薄膜晶体管的制备。 对于柔性基片， 只需将柔性基片与放置基片的平台紧贴， 刮板在柔性基片表 面上进行刮涂。 同样， 对于形状不规则的基片也是如此， 可以采用尺寸较大 的刮板， 刮板的长度要大于等于不规则基片的最大宽度。 例如， 不规则基片 为梯形时， 可以调整刮板长度大于或等于梯形的最长边， 目的是使刮板带动 有机溶、; ^盖到整个基片表面。
例如，所述有机半导体材料为 6,13-双（三异丙基硅烷基乙炔基）并五苯， 所述高分子聚合物绝缘材料为聚甲基丙烯酸曱酯或聚苯乙烯， 所述 6,13-双 (三异丙基硅烷基乙炔基）并五苯和高分子聚合物绝缘材料的质量比为 1: 1 , 所述 6,13-双 (三异丙基硅烷基乙炔基 )并五苯和高分子聚合物绝缘材料在所 述溶液中的总质量百分浓度为 2%。
所述溶液中的溶质例如是有机半导体材料和高分子聚合物绝缘材料。 有 机半导体材料用于形成有机薄膜晶体管的有机半导体层， 高分子聚合物绝缘 材料用于形成有机薄膜晶体管的有机半导体层和栅绝缘层之间的界面修饰 层。 优选的， 有机半导体材料为 6,13-双（三异丙基硅烷基乙炔基） 并五苯， 即 Tips-并五苯， 优选的， 高分子聚合物绝缘材料可以为聚曱基丙烯酸曱酯 ( PMMA )或聚苯乙烯（PS )； 通过试验研究表明， Tips-并五苯和高分子聚 合物绝缘材料的质量比为 1 :1 , 且 Tips-并五苯和高分子聚合物绝缘材料在所 述溶液中的总质量百分浓度为 2%时制备的溶液可以取得希望的技术效果。
例如， 所述溶液的溶剂为氯苯或二氯苯。
所述溶液的溶剂用于溶解有机半导体材料和高分子聚合物绝缘材料， 需 满足溶剂的溶解性较好， 并且在脱溶剂时易于挥发。 优选的， 溶剂可以为氯 苯或二氯苯； 例如， 二氯苯可以为邻二氯苯、 间二氯苯或对二氯苯。
例如， 所述基片为硅基片、 玻璃基片或塑料基片。
本发明实施例的基片可以选择不同基底的基片， 只要该基片需要制备有 机薄膜晶体管的有机半导体层都可以使用本发明的有机薄膜晶体管的制备方 法制备， 优选的基片为硅基片、 玻璃基片或塑料基片。
本发明实施例还涉及一种有机薄膜晶体管， 包括依次排列的栅电极、 栅 绝缘层、 有机半导体层和源漏电极， 其中， 所述有机半导体层通过上述的有 机薄膜晶体管的制备方法制备。本发明实施例还涉及另一种有机薄膜晶体管， 包括依次排列的源漏电极、 有机半导体层、 栅绝缘层和栅电极， 其中， 所述 有机半导体层通过上述的有机薄膜晶体管的制备方法制备。
在本发明实施例中， 以底栅结构为例， 通过上述方法制备的有机薄膜晶 体管包括依次排列的栅电极、 栅绝缘层、 有机半导体层和源漏电极， 其中， 有机半导体层的制备通过上述有机薄膜晶体管的制备方法制备。 例如， 该 OTFT 可以还包括位于有机半导体层和栅绝缘层之间的高分子聚合物绝缘材 料层。 当有机半导体材料和高分子聚合物绝缘材料的溶液刮涂到形成亲水区 域和疏水区域的栅绝缘层上后， 混合溶液停留在亲水区域， 脱溶后小分子有 机半导体材料和高分子聚合物绝缘材料分层， 分别形成有机半导体层和高分 子聚合物绝缘层。 小分子有机半导体材料例如为 Tips-并五苯， 高分子聚合物 绝缘材料例如为聚曱基丙烯酸曱酯或聚苯乙烯， 高分子聚合物绝缘层位于有 机半导体层和栅绝缘层之间。 有机薄膜晶体管的其他结构， 如栅电极、 栅绝 缘层和源漏电极的制备可以采用现有的有机薄膜晶体管制备方法进行。同理， 顶栅结构的有机薄膜晶体管也可以采用上述方法制备。
本发明实施例还涉及上述有机薄膜晶体管的制备方法在显示装置制造中 的应用。 显示装置例如可以为： 液晶面板、 电子纸、 OLED面板、 液晶电视、 液晶显示器、数码相框、 手机、 平板电脑等具有任何显示功能的产品或部件。
本发明实施例还涉及应用于所述的有机薄膜晶体管的制备方法的制备装 置， 包括： 刮板和移动控制装置， 其中， 所述移动控制装置用于控制刮板与 基片接触， 并控制刮板相对基片移动； 通过刮板将溶解有用于形成有机半导 体层的有机半导体材料的溶液刮涂在基片上， 并使刮板与基片的所有接触点 的线速度相同。
本发明实施例应用于所述的有机薄膜晶体管的制备方法的制备装置可以 有多种， 以下两种装置为例来说明。
如图 1所示， 为本发明实施例涉及的一种制备装置， 包括刮板 1、 固定 刮板的固定器（未示出）和放置基片 3的传送带 2。 该装置的工作原理如下， 将基片 3放置在传送带 2上,将与基片 3对应的刮板 1安装在固定器上固定， 例如刮板 1与基片 3形成的夹角在 30°~45°,如基片的尺寸例如为 2cmx2cm, 则选用的刮板与基片接触的边长要大于或等于 2cm, 在基片 3靠近刮板 1的 一边滴足量的所需的溶液 4, 启动与传送带 2关联的步进马达， 使基片 3在 传送带 2带动下向刮板 1移动， 并使得刮板 1刮涂基片 3边缘的溶液 4直到 将溶液 4刮涂到整个基片。 可以通过多种机械方式将刮板 1安装在固定器上 固定。
本发明的实施例还涉及另一种制备装置， 包括刮板、 移动刮板的移动器 和放置基片的平台。 该刮涂装置的工作原理如下， 基片不移动， 基片放置在 平台上， 而刮板可以随着控制刮板移动的移动器移动， 从而在固定不动的基 片上完成刮涂工艺。
例如， 所述刮板为硅橡胶刮板。 硅橡胶刮板表面平整， 材质坚硬， 并且 其表面能较低， 不易沾覆刮涂所用的溶液， 适合用作刮涂的刮板。
例如， 在刮板朝向基片的一面设置有滴液口。 例如， 在刮板底部可以设 置 1个滴液口， 使溶液通过该滴液口流出， 若基片尺寸很大， 可以设置多个 滴液口， 如 3个、 4个或 6个等。 在刮涂时只需根据基片的大小设定不同的 滴液量， 不会造成原材料的浪费， 可以降低生产成本。 法。
(一）基片表面的处理
在氩气保护下， 用三氯 （1H,1H,2H,2H-十七氟癸烷基） 硅烷蒸气处理整 张空白基片以形成单分子层， 再用具有预先设计的图案的挡板覆盖在该基片 上， 将挡板和基片一^文到紫外臭氧清洗仪器中处理。 如图 2所示， 对应于 挡板透过区域形成亲水区域 5，对应于挡板不透过区域形成疏水区域 6，得到 表面能具有有机溶液选择性梯度的基片。
(二）有机溶液的配制
在微加热和磁力搅拌的条件下将小分子有机半导体材料与高分子聚合物 绝缘材料溶解在有机半导体和高分子聚合物的优良溶剂（如氯苯、二氯苯等 ) 中， 充分溶解、 静置、 过滤， 得到小分子有机半导体材料和高分子聚合物绝 缘材料的混合溶液。 小分子有机半导体材料可以选用 6,13-双（三异丙基硅烷 基乙炔基） 并五苯、 6,13-双（三烷基硅烷基乙炔基） 双噻吩蒽及其衍生物、 烷基取代的苯并噻吩并苯并噻吩或烷基取代的六噻吩（α-6Τ )等； 高分子聚 合物绝缘材料可以选用聚曱基丙烯酸曱酯 （PMMA ) 、 聚曱基丙烯酸丁酯、 聚丙烯酸甲酯、 聚苯乙烯（PS ) 、 聚 (X-甲基苯乙烯（PMS )等。 下面的实施 例仅以 Tips-并五苯作为小分子有机半导体材料的代表，以聚苯乙烯或聚甲基 丙烯酸甲酯作为高分子聚合物绝缘材料的代表进行说明。
(三）有机薄膜晶体管的制备
实施例 1
将质量比为 1:1的 Tips-并五苯与聚苯乙烯（PS )溶解在 40°C的氯苯中， 静置、 过滤后， 制成 Tips-并五苯与聚苯乙浠的总廣量百分浓度为 2%的混合 溶液； 滴定足量的溶液在硅基片边缘， 以 0.5mm/s的速度将溶液緩慢地均匀 刮涂在硅基片上， 完成选择性图案化； 真空环境充分千燥， 制备成膜。 金属 挡板遮盖已自组装完毕的器件， 用热蒸镀法制备厚度为 50-100nm的金电极 作为源漏电极。
实施例 2
将质量比为 1:1的 Tips-并五苯与聚苯乙烯（PS )溶解在 40°C的氯苯中， 静置、 过滤， 制成 Tips-并五苯与聚苯乙烯的总质量百分浓度为 2%的有机溶 液； 滴定足量的溶液在硅基片边缘， 借助于附加刮涂装置以 5cm/s的速度将 溶液緩慢地均匀涂布在硅基片上， 完成选择性图案化； 真空环境充分干燥， 制备成膜。 金属挡板遮盖已自组装完毕的器件， 用热蒸镀法制备厚度为 50- 100匪的金电极作为源漏电极。
实施例 3
将质量比为 1:1的 Tips-并五苯与聚苯乙婦（PS )溶解在 40°C的二氯苯中， 静置、 过滤后， 制成 Tips-并五苯与聚苯乙烯的总质量百分浓度为 2%的混合 溶液； 滴定足量的溶液在硅基片边缘， 以 lcm/s的速度将溶液緩慢地均匀刮 涂在硅基片上， 完成选择性图案化； 真空环境充分干燥， 制备成膜。 金属挡 板遮盖已自组装完毕的器件， 用热蒸镀法制备厚度为 50-100匪的金电极作 为源漏电极。
实施例 4
将质量比为 1:1的 Tips-并五苯与聚苯乙婦（PS )溶解在 40°C的二氯苯中， 静置、 过滤后， 制成 Tips-并五苯与聚苯乙烯的总质量百分浓度为 2%的混合 溶液； 滴定足量的溶液在硅基片边缘， 以 5mm/s的速度将溶液緩慢地均匀刮 涂在硅基片上， 完成选择性图案化； 真空环境充分干燥， 制备成膜。 金属挡 板遮盖已自组装完毕的器件， 用热蒸镀法制备厚度为 50-100匪的金电极作 为源漏电极。
实施例 5
将质量比为 1: 1的 Tips-并五苯与聚甲基丙烯酸甲酯（ PMMA )溶解在 40°C 的二氯苯中， 静置、 过滤后， 制成 Tips-并五苯与聚苯乙烯的总^:量百分浓度 为 2%的混合溶液； 滴定足量的溶液在硅基片边缘， 以 5mm/s的速度将溶液 緩慢地均匀刮涂在硅基片上， 完成选择性图案化； 真空环境充分干燥， 制备 成膜。金属挡板遮盖已自组装完毕的器件， 用热蒸镀法制备厚度为 50-100nm 的金电极作为源漏电极。
实施例 6
将质量比为 1: 1的 Tips-并五苯与聚甲基丙烯酸甲酯（ PMMA )溶解在 40°C 的二氯苯中， 静置、 过滤后， 制成 Tips-并五苯与聚苯乙烯的总质量百分浓度 为 2%的混合溶液； 滴定足量的溶液在硅基片边缘， 以 lcm/s的速度将溶液緩 慢地均匀刮涂在硅基片上， 完成选择性图案化； 真空环境充分干燥， 制备成 膜。 金属挡板遮盖已自组装完毕的器件， 用热蒸镀法制备厚度为 50-100nm 的金电极作为源漏电极。
实施例 7
将质量比为 1:1的 Tips-并五苯与聚苯乙烯（PS )溶解在 40°C的氯苯中， 静置、 过滤后， 制成 Tips-并五苯与聚苯乙烯的总质量百分浓度为 2%的混合 溶液； 滴定足量的溶液在玻璃基片边缘， 以 0.5mm/s的速度将溶液緩慢地均 匀刮涂在基片上， 完成选择性图案化； 真空环境充分千燥， 制备成膜。 金属 挡板遮盖已自组装完毕的器件， 用热蒸镀法制备厚度为 50-100nm的金电极 作为源漏电极。
实施例 8
将质量比为 1:1的 Tips-并五苯与聚苯乙浠 ( PS )溶解在 40°C的氯苯中， 静置、 过滤后， 制成 Tips-并五苯与聚苯乙烯的总质量百分浓度为 2%的混合 溶液； 滴定足量的溶液在塑料基片边缘，该塑料基片可以选用聚酯基片（PET 基片） ， 以 0.5mm/s的速度将溶液緩慢地均匀刮涂在塑料基片上， 完成选择 性图案化； 真空环境充分干燥， 制备成膜。 金属挡板遮盖已自组装完毕的器 件， 用热蒸镀法制备厚度为 50-1 OOnm的金电极作为源漏电极。 对比例 1
将纯 Tips-并五苯溶解在 40°C的二氯苯中， 静置， 制成质量百分浓度为 2%的溶液。 以 1000r/min的速度旋涂在预处理的基片上，完成选择性图案化； 真空环境充分干燥， 制备成膜。 金属挡板遮盖已自组装完毕的器件， 用热蒸 镀法制备厚度为 50-100nm的金电极作为源漏电极。
对比例 2
将质量比为 1: 1的 Tips-并五苯与聚甲基丙烯酸甲酯（ PMMA )溶解在 80 °C 的二氯苯中， 静置、 过滤制成总质量百分浓度为 2%的溶液。 以 3500r/min的 速度旋涂在预处理的基片上， 完成选择性图案化； 真空环境充分干燥， 制备 成膜。金属挡板遮盖已自组装完毕的器件， 用热蒸镀法制备厚度为 50-100nm 的金电极作为源漏电极。
采用偏光显微镜对实施例 1~7和对比例 1~2 的有机薄膜晶体管进行拍 摄， 并进行器件性能测试。 图 3为实施例 5制备的有机薄膜晶体管器件的 20 倍放大的偏光显微镜图像。可以看到在沟道内， Tips-并五苯呈栅状整齐排列， 这表明 Tips-并五苯的结晶性好。图 4为实施例 5制备的多个有机薄膜晶体管 器件的转移曲线图； 粗曲线为最优的器件转移曲线图， 其收率为 43/48=89.58%, 可见优良器件收率大大提高， 器件性能均匀性也有提高， 最 好性能与最差性能跨度大约为一个数量级； 图 5是实施例 5中制备的最优器 件的双向转移曲线图， 可以看出基本不存在迟滞效应； 图 6是实施例 5中制 备的最优器件的输出曲线图。 实施例 1~4和实施例 6~8分别制备的单个有机 薄膜晶体管器件的 20倍放大偏光显微镜图与图 3类似， 其也表明 Tips-并五 苯的结晶性较好， 这里就不——赘述； 根据测量和计算， 实施例 1~4和实施 例 6〜8分别制备的多个有机薄膜晶体管器件的收率分别为 92%、 86%、 91%、 94%、 90%、 91%和 84%。 可见根据本发明实施例得到的器件的收率较高， 并且器件性能较均匀。
采用现有技术的旋涂工艺制作的有机薄膜晶体管器件， 图 7为对比例 1 制备的有机薄膜晶体管器件的双向转移曲线图， 图 8是对比例 1中制备的有 机薄膜晶体管器件的输出曲线图， 可以看出该对比例的器件性能差， 欧姆接 触不好， 且存在很大的迟滞效应。 对比例 2采用旋涂方法制备有机薄膜晶体 管， 旋转过程中， 它们会因为各自线速度的不同而产生差异， 靠近基片中心 处的器件和结晶性较好， 但基片边缘和角落处的器件就相差甚远。 即， 边缘 或角落里的亲水区域内 Tips-并五苯和 PMMA都棵露在外， 高分子聚合物层 不能很好地分配到有机半导体层和栅绝缘层之间。 图 9为对比例 2中一个不 均匀器件的偏光显微镜图， 左下角亮区为 Tips-并五苯堆积的地方， 而图中上 部区域的 Tips-并五苯的结晶情况远没有亮区好。 图 10为对比例 2制备的一 个结晶方向杂乱无章器件的偏光显微镜图， 可以看出首先其中的有机半导体 材料结晶不均匀， 其次在亮区和图中上部区域都没有所谓的结晶方向性。 图 11是对比例 2的制备的多个有机薄膜晶体管器件的转移曲线图， 其中， 可以 得到器件的工作概率为 58/216=26.85%, 器件收率很小， 而且性能参差不齐， 最好器件与最差器件跨度大于三个数量级。
以上所述仅是本发明的示范性实施方式， 而非用于限制本发明的保护范 围， 本发明的保护范围由所附的权利要求确定。

Claims

权利要求书
1、 一种有机薄膜晶体管的制备方法， 包括：
在基片上形成栅电极、 栅绝缘层、 有机半导体层和源漏电极； 其中， 形成所述有机半导体层的步骤包括： 形成所述有机半导体层。
2、如权利要求 1所述的有机薄膜晶体管的制备方法， 其中， 在将溶解有 半导体层的刮涂过程中， 刮板与所述基片的所有接触点的线速度相同。
3、如权利要求 2所述的有机薄膜晶体管的制备方法， 其中， 所述线速度 是选自 0.5mm/s〜5cm/s中的任一速度。
4、如权利要求 3所述的有机薄膜晶体管的制备方法， 其中， 所述线速度 为 5mm/s。
5、如权利要求 1所述的有机薄膜晶体管的制备方法， 其中， 在形成所述 有机半导体层之前还包括： 在所述基片上形成亲水区域和疏水区域。
6、如权利要求 1所述的有机薄膜晶体管的制备方法， 其中， 在所述基片 上形成栅电极、 栅绝缘层、 有机半导体层和源漏电极包括：
在所述基片表面形成栅电极；
在形成有所述栅电极的基片表面覆盖栅绝缘层；
在所述栅绝缘层表面形成有机半导体层；
在所述有机半导体层表面形成源漏电极。
7、如权利要求 1所述的有机薄膜晶体管的制备方法， 其中， 在所述基片 上形成栅电极、 栅绝缘层、 有机半导体层和源漏电极包括：
在所述基片表面形成源漏电极；
在形成有所述源漏电极的基片表面覆盖有机半导体层；
在所述有机半导体层表面形成栅绝缘层；
在所述栅绝缘层表面形成栅电极。
8、如权利要求 1所述的有机薄膜晶体管的制备方法， 其中， 所述溶液中 还溶解有高分子聚合物绝缘材料。
9、如权利要求 8所述的有机薄膜晶体管的制备方法， 其中， 所述有机半 导体材料为 6,13-双（三异丙基硅烷基乙炔基）并五苯， 所述高分子聚合物绝 缘材料为聚甲基丙烯酸甲酯或聚苯乙烯， 所述 6,13-双（三异丙基硅烷基乙炔 基） 并五苯和高分子聚合物绝缘材料的质量比为 1: 1 , 所述 6,13-双（三异丙 基硅烷基乙炔基） 并五苯和高分子聚合物绝缘材料在所述溶液中的总质量百 分浓度为 2%。
10、 如权利要求 1-9任一所述的有机薄膜晶体管的制备方法， 其中， 所 述溶液的溶剂为氯苯或二氯苯。
11、 如权利要求 1-10所述的有机薄膜晶体管的制备方法， 其中， 所述基 片为硅基片、 玻璃基片或塑料基片。
12、 一种有机薄膜晶体管， 包括有机半导体层， 其中， 所述有机半导体 层通过如权利要求 1-11中任一项所述的方法制备。
13、根据权利要求 12所述的有机薄膜晶体管， 包括在基片上依次排列的 栅电极、 栅绝缘层、 所述有机半导体层和源漏电极，
14、根据权利要求 12所述的有机薄膜晶体管， 包括在基片上依次排列的 源漏电极、 所述有机半导体层、 栅绝缘层和栅电极。
15、 一种应用于如权利要求 1所述的有机薄膜晶体管的制备方法的制备 装置， 包括： 刮板和移动控制装置， 其中， 所述移动控制装置用于控制所述 刮板与基片接触， 并控制所述刮板相对所述基片移动；
通过所述刮板将溶解有用于形成有机半导体层的有机半导体材料的溶液 刮涂在所述基片上。
16、 如权利要求 15所述的制备装置， 其中， 所述移动控制装置包括： 固定所述刮板的固定器和放置所述基片的传送带。
17、 如权利要求 15所述的制备装置， 其中， 所述移动控制装置包括： 移动所述刮板的移动器和放置所述基片的平台。
18、 如权利要求 15-17任一所述的制备装置， 其中， 所述刮板为硅橡胶 刮板。
19、 如权利要求 15-18任一所述的制备装置， 其中， 在所述刮板朝向基 片的一面设置有滴液口。
PCT/CN2013/073772 2013-02-27 2013-04-07 有机薄膜晶体管及其制备方法和制备装置 WO2014131220A1 (zh)

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