WO2014121450A1 - Équipement de dépôt de couche atomique du type à rouleaux couplés et son procédé d'utilisation - Google Patents

Équipement de dépôt de couche atomique du type à rouleaux couplés et son procédé d'utilisation Download PDF

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Publication number
WO2014121450A1
WO2014121450A1 PCT/CN2013/071410 CN2013071410W WO2014121450A1 WO 2014121450 A1 WO2014121450 A1 WO 2014121450A1 CN 2013071410 W CN2013071410 W CN 2013071410W WO 2014121450 A1 WO2014121450 A1 WO 2014121450A1
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WO
WIPO (PCT)
Prior art keywords
roll
air
atomic layer
layer deposition
deposited
Prior art date
Application number
PCT/CN2013/071410
Other languages
English (en)
Chinese (zh)
Inventor
王东君
Original Assignee
Wang Dongjun
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wang Dongjun filed Critical Wang Dongjun
Priority to PCT/CN2013/071410 priority Critical patent/WO2014121450A1/fr
Publication of WO2014121450A1 publication Critical patent/WO2014121450A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Definitions

  • the present invention relates to an atomic layer deposition apparatus, and more particularly to a roll-to-roll atomic layer deposition apparatus and method of use thereof. Background technique
  • Atomic Layer Deposition also known as atomic layer deposition or atomic layer epitaxy
  • ALD Atomic Layer Deposition
  • ZnS:Mn polycrystalline fluorescent materials
  • amorphous A1 2 0 3 The development of insulating films, these materials can be used for flat panel displays. Since this process involved complex surface chemistry and low deposition rates, the technology did not make a substantial breakthrough until the mid-to-late 1980s. Until the mid-1990s, interest in this technology continued to increase, mainly due to the development of microelectronics and deep submicron chip technology that required the size of devices and materials to continue to decrease, while the aspect ratio of devices increased.
  • the thickness of the material used is reduced to the order of a few nanometers. Therefore, the advantages of atomic layer deposition technology are manifested. For example, the deposition of single atomic layer, the thickness of the deposited layer and the excellent consistency are excellent. Relatively speaking, the problem of slow deposition is not important.
  • a primary object of the present invention is to provide a roll-to-roll atomic layer deposition apparatus and a method of using the same, which can perform atomic layer deposition under atmospheric pressure or even in an atmospheric environment, and can be continuously produced to meet the requirements of large-scale industrial production.
  • the present invention provides a roll-to-roll atomic layer deposition apparatus comprising: at least two reel devices for driving a strip-shaped sample to be deposited;
  • a power unit for outputting power to the reel device, the power unit being coupled to the reel device;
  • reaction chamber having a plurality of air passages therein and a passage intersecting with the direction of the air passage for the sample to be deposited to pass through, the reaction chamber having a plurality of A plurality of air inlets and air outlets corresponding to the air passage are described.
  • the reaction chamber may be plural.
  • a plurality of said reaction chambers may be arranged at intervals in an independently distributed manner.
  • the apparatus may further comprise heating means for heating the sample to be deposited.
  • the apparatus may further comprise an evacuation device for removing by-products generated by the reaction, and a recovery device for recovering the remaining reactants.
  • the present invention also provides a roll-to-roll atomic layer deposition apparatus, the apparatus comprising a reaction chamber, the inside of which is provided with at least two reel devices for driving a strip-shaped sample to be deposited, and a power unit coupled to the reel device for outputting power to the reel device, wherein the reaction chamber is further provided with a plurality of air passages and a direction intersecting with the air passage for the waiting A channel through which the sample is deposited has a plurality of air inlets and air outlets corresponding to the plurality of air passages.
  • the apparatus may further comprise heating means for heating the sample to be deposited.
  • the apparatus may further comprise an evacuation device for removing by-products generated by the reaction, and a recovery device for recovering the remaining reactants.
  • the apparatus may further comprise a filtering device for filtering the air disposed in front of the air passage providing the air.
  • the present invention also provides an atomic layer deposition method according to the aforementioned roll-to-roll atomic layer deposition apparatus.
  • the method utilizes water molecules in the air to react with the reactants to form an oxide film on the sample to be deposited.
  • the equipment has a simple structure and is easy to use and maintain. Secondly, when it is used, it does not involve a vacuum system and has low manufacturing cost. Moreover, it can be continuously produced and has a high production rate. Finally, the reaction source can be recycled and used to improve the utilization rate of the reactants. The exhaust gas is cleaner and reduces pollution.
  • the invention discloses a roll-to-roll atomic layer deposition apparatus, comprising:
  • At least two reel devices for driving a strip-shaped sample to be deposited; a power device coupled to the reel device for outputting power to the reel device; a reaction chamber, the reaction
  • the interior of the cavity has a plurality of air passages, and a passage intersecting the direction of the air passage for the sample to be deposited to pass through, the reaction chamber having a plurality of A plurality of air inlets and air outlets corresponding to the air passage are described.
  • the strip-shaped sample to be deposited is wound on one of the reel devices, and the tail end is wound onto another reel device, then the power device drives the latter to rotate, and the strip-shaped sample to be deposited is from the previous roll.
  • the cartridge device is moved to the other reel device until it is completely wound on the other reel device.
  • the reaction chamber may be plural. It is used to deposit different oxide deposition layers, that is, oxide films, or to deposit oxide films multiple times to improve deposition efficiency.
  • a plurality of the reaction cavities may be spaced apart in an independently distributed manner.
  • a plurality of independent reaction chambers can deposit different reactants, and different deposition thicknesses of the reactants can be obtained by setting different numbers of reaction chambers.
  • Each of the independent reaction chambers includes three inlet ports when the reactants are deposited, and the three inlet ports respectively supply the reaction chamber with an inert gas having a pressure greater than or equal to atmospheric pressure, and a reactant (such as reactant A).
  • the inert gas that is, the roll-to-roll atomic layer deposition apparatus in use, the reaction chamber and the outside of the reaction chamber (the outside of the two ends of the passage are connected to the external atmosphere) include: air, inert gas, reactant A, inert gas and air.
  • the air mainly uses the water contained therein to form a layer of water molecules on the surface of the sample to be deposited for providing oxygen atoms during the deposition reaction;
  • the pressure of the inert gas is greater than or equal to atmospheric pressure to prevent the atmosphere from flowing into the reaction chamber, and is inert.
  • the gas is used to remove unwanted residual gas such as excess water;
  • the reactant A is used to react with water to form an oxide film, and a layer of reactant molecules is adsorbed for the next reaction with water;
  • the gas is used to remove unwanted residual gases such as excess reactants; finally, the water in the air continues to react with the reactant A to form another oxide film.
  • the number of the gas outlets is one for the recovery of the reactant A.
  • the reaction process that occurs in each independent reaction chamber includes the following five steps: 1) The strip-shaped sample to be deposited moves forward with the rotation of the reel device, and the water molecules in the atmosphere are adsorbed before entering the channel. Further, a layer of water molecules is formed on the surface of the sample to be deposited; 2) after entering the channel, the gas inlet of the inert gas is first passed, and the inert gas will excess the surface of the sample to be deposited. An unnecessary residual gas such as moisture is blown away; 3) and then through the inlet of the reactant A, the reactant A reacts with the water molecules on the surface of the sample to be deposited to form an oxide film and adsorb a layer of the reactant A molecule.
  • the inert gas will blow away unnecessary residual gas such as reactants on the surface of the sample to be deposited; 5) after leaving the channel, the sample to be deposited enters the atmosphere, and its surface Reactant A reacts with water molecules in the air to form another oxide film.
  • the deposition of the sample will occur twice after each pass through the reaction chamber to form two oxide films. That is to say, when the strip-shaped sample to be deposited is completely wound from one reel device to the other reel device, two layers of oxide film are formed on the entire surface of the strip-shaped sample to be deposited. If it is desired to deposit a thicker film, the strip-shaped sample to be deposited can be re-rolled back to the original reel unit from the latter reel unit, so that a thicker film can be prepared by running back and forth.
  • each of the independent reaction chambers when depositing two reactants, includes seven gas inlets, respectively supplying inert gas, reactant A, inert gas, air (mainly water), inert gas to the reaction chamber. , another reactant (such as reactant B) and an inert gas.
  • the inert gas, the reactant A, and the inert gas are the minimum units for depositing a reactant.
  • the number of inlets when depositing multiple reactants can be derived. At this time, the number of the gas outlets is two, and it is used for the reaction A and the reaction B.
  • the atmospheric environment can be changed to the desired gas environment.
  • the roll atomic layer deposition apparatus further comprises heating means for heating the sample to be deposited to provide energy required for the atomic layer deposition reaction.
  • the heating method can be realized by various methods such as radiation, heat transfer, direct current conduction to the conductive strip-shaped sample to be deposited, and the like.
  • the roll-to-roll atomic layer deposition apparatus further comprises an air suction device for removing by-products generated by the reaction.
  • the roll-to-roll atomic layer deposition apparatus further comprises a recovery device for recovering the remaining reactants, realizing resource reuse, and saving production costs.
  • the reel device is usually installed in an external atmosphere, and can be quickly replaced during use. If the sample to be deposited is sensitive to air, the reel unit system can be installed in the inert gas area.
  • a plurality of the reaction chambers may be integrally disposed with the reel device in an integrated manner
  • the present invention also discloses a roll-to-roll atomic layer deposition apparatus, including a reaction chamber, the reaction chamber The interior is provided with at least two reel devices, and a power device coupled to the reel device; wherein the reel device is for driving a strip-shaped sample to be deposited, and the power device is for the reel
  • the device outputs power; the interior of the reaction chamber is further provided with a plurality of air passages, and the cavity has a plurality of air inlets and air outlets corresponding to the plurality of air passages.
  • the reel device is typically mounted within the reaction chamber.
  • the reaction process can be known from the above description, and will not be described herein.
  • the number of air inlets is different from the above. Since the reaction chamber is integrally disposed with the reel device, water in the external atmospheric environment cannot be utilized. Therefore, it is necessary to add two air inlets for providing air; In the case of the reactants, it includes five gas inlets; when depositing two reactants, it includes nine gas inlets. That is, air, inert gas, reactants, inert gas, and air are the minimum units for depositing a reactant. When a plurality of reactants are deposited, air of one air passage is shared between two adjacent minimum units. By analogy, the number of inlets when depositing multiple reactants can be derived. Wherein, if a non-oxide film is deposited, the air supply opening may be changed to provide the desired gas. At this time, there are five air outlets, which correspond to the air and the air passage of the reactants.
  • the roll-to-roll atomic layer deposition apparatus further comprises a filtering device disposed at the supply space Before the airway of the gas, it is used to filter dust and unwanted impurities in the air.
  • the roll-to-roll atomic layer deposition apparatus also includes the above-described heating device, air suction device, and recovery device.
  • the air suction device and the recovery device are disposed on the air outlet of the reactant.
  • the power device, the heating device, the air suction device, the recovery device, and the like in the above two devices are all commercially available mature products, and the structure and function thereof are not described again; in addition, the roller, the tension sensor, the reducer, and the coupling And so on can be incorporated into the scope of the power unit or reel unit.
  • the inert gas may be nitrogen, argon or the like; the reactant may be tridecyl aluminum (preparation of alumina), diethyl zinc (preparation of zinc oxide), etc.; the sample material to be deposited is a flexible material such as an organic film or a braid. , metal strips, etc.
  • a sheet-like or small-sized material which cannot be formed into a strip shape, it can be adhered to a strip-shaped sample to be deposited for deposition. After the one-sided deposition is completed, it is turned over and the other side is subjected to atomic layer deposition.
  • the roll-to-roll atomic layer deposition apparatus of the present embodiment includes: two reel devices 10, a power device (not shown), and a reaction chamber 20, wherein the inside of the reaction chamber 20 has 3
  • the air passage 21 and the passage 22 have three intake ports 23 and an air outlet 24 on the reaction chamber 20.
  • the sample 30 to be deposited passes through the passage 22 and moves between the two reel devices 10, and the three air passages 21 correspond to the three intake ports 23, respectively providing inert gas, reactants, and inertness.
  • a gas used to deposit an oxide film is provided.
  • the roll-to-roll atomic layer deposition apparatus of the present embodiment includes: three reel devices 10, a power device (not shown), a reaction chamber 20; the structure and implementation force of a single reaction chamber 20.
  • the same, and the number of reaction chambers 20 is six.
  • the six reaction chambers 20 can deposit the same oxide film or deposit different oxide films. When it is required to deposit a plurality of different thicknesses of the multilayer oxide film, for example, depositing an oxide film prepared from the reactant A, the reactant B, and the reactant C on the strip-shaped sample to be deposited is 3:2:1.
  • Three reaction chambers 20 providing reactant A, two reaction chambers 20 providing reactant B, and one reaction chamber 20 providing reactant C are provided.
  • the inside of the reaction chamber 20 is provided with five reel devices 10 and a power device (not shown).
  • the inside of the reaction chamber 20 is also provided with nine air passages 21 and a passage 22, and the reaction chamber 20 has There are nine air inlets 23 and five air outlets 24, and two air outlets 24 are respectively connected to the air extracting device 40 and the recovery device 41.
  • a filtering device 50 is provided in front of the air passage for supplying air.
  • air D inert gas
  • reactant A inert gas
  • inert gas inert gas
  • inert gas inert gas (:, reactant B,)
  • the inert gas C and the air D are used to deposit a plurality of oxide films of a plurality of layers.

Abstract

L'invention concerne un équipement de dépôt de couche atomique du type à rouleaux couplés, comprenant : au moins deux dispositifs à tambour utilisés pour entraîner un échantillon du type courroie à déposer ; un dispositif de puissance utilisé pour délivrer une force motrice aux dispositifs à tambour, le dispositif de puissance étant couplé aux dispositifs à tambour ; et une chambre de réaction, l'intérieur de la chambre de réaction étant pourvu de multiples passages de gaz et d'un passage croisant la direction des passages de gaz et utilisé pour être traversé par l'échantillon à déposer, et de multiples entrées de gaz et sorties de gaz correspondant aux multiples passages de gaz étant ménagées sur la chambre de réaction. L'invention concerne également un procédé de dépôt de couche atomique utilisant l'équipement de dépôt de couche atomique du type à rouleaux couplés précédemment mentionné. L'équipement de dépôt de couche atomique du type à rouleaux couplés et son procédé d'utilisation permettent de mettre en œuvre un dépôt de couche atomique sous pression atmosphérique et même dans un environnement atmosphérique, et permettent une production continue, satisfaisant les exigences d'une production industrielle à grande échelle.
PCT/CN2013/071410 2013-02-05 2013-02-05 Équipement de dépôt de couche atomique du type à rouleaux couplés et son procédé d'utilisation WO2014121450A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2013/071410 WO2014121450A1 (fr) 2013-02-05 2013-02-05 Équipement de dépôt de couche atomique du type à rouleaux couplés et son procédé d'utilisation

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PCT/CN2013/071410 WO2014121450A1 (fr) 2013-02-05 2013-02-05 Équipement de dépôt de couche atomique du type à rouleaux couplés et son procédé d'utilisation

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9598769B2 (en) 2013-07-24 2017-03-21 Uchicago Argonne, Llc Method and system for continuous atomic layer deposition

Citations (5)

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US20100093698A1 (en) * 2008-09-08 2010-04-15 Sogole Bahmanyar Aminotriazolopyridines, compositions thereof, and methods of treatment therewith
CN101809191A (zh) * 2007-09-26 2010-08-18 伊斯曼柯达公司 通过大气压力下的原子层沉积(ald)制造光学膜的方法
CN202193841U (zh) * 2011-07-28 2012-04-18 英作纳米科技（北京）有限公司 新型原子层沉积设备
CN102477544A (zh) * 2010-11-26 2012-05-30 英作纳米科技（北京）有限公司 制备多孔材料内壁薄膜的原子层沉积方法及其设备
CN102575346A (zh) * 2009-09-22 2012-07-11 3M创新有限公司 将原子层沉积涂层涂覆到多孔非陶瓷基底上的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101809191A (zh) * 2007-09-26 2010-08-18 伊斯曼柯达公司 通过大气压力下的原子层沉积(ald)制造光学膜的方法
US20100093698A1 (en) * 2008-09-08 2010-04-15 Sogole Bahmanyar Aminotriazolopyridines, compositions thereof, and methods of treatment therewith
CN102575346A (zh) * 2009-09-22 2012-07-11 3M创新有限公司 将原子层沉积涂层涂覆到多孔非陶瓷基底上的方法
CN102477544A (zh) * 2010-11-26 2012-05-30 英作纳米科技（北京）有限公司 制备多孔材料内壁薄膜的原子层沉积方法及其设备
CN202193841U (zh) * 2011-07-28 2012-04-18 英作纳米科技（北京）有限公司 新型原子层沉积设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9598769B2 (en) 2013-07-24 2017-03-21 Uchicago Argonne, Llc Method and system for continuous atomic layer deposition

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