WO2014119891A1 - Light emitting diode package and manufacturing method therefor - Google Patents

Light emitting diode package and manufacturing method therefor Download PDF

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Publication number
WO2014119891A1
WO2014119891A1 PCT/KR2014/000766 KR2014000766W WO2014119891A1 WO 2014119891 A1 WO2014119891 A1 WO 2014119891A1 KR 2014000766 W KR2014000766 W KR 2014000766W WO 2014119891 A1 WO2014119891 A1 WO 2014119891A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
emitting diode
base
terminal
reflecting
Prior art date
Application number
PCT/KR2014/000766
Other languages
French (fr)
Korean (ko)
Inventor
김미숙
선순요
Original Assignee
Kim Mi Suk
Sun Sun Yo
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Filing date
Publication date
Application filed by Kim Mi Suk, Sun Sun Yo filed Critical Kim Mi Suk
Publication of WO2014119891A1 publication Critical patent/WO2014119891A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a light emitting diode package and a method for manufacturing the same, and more particularly, to a light emitting diode package and a method for manufacturing the same having excellent heat dissipation effect.
  • the light emitting diode (LED) of the conventional PN type is semi-permanent and environmentally friendly, and its efficiency is superior to that of a conventional light source. Accordingly, backlights, landscapes, automobile lights and general lighting of liquid crystal displays are rapidly being replaced by light emitting diodes.
  • PN-type conventional light emitting diode packages are constructed.
  • a lead frame is separated into an anode and a cathode, and an insulator molding using an injection molding resin is coupled to the separated lead frame. Done.
  • the insulator molding serves as a reflector to insulate the polarizations of the lead frame and to reflect light generated from the light emitting diodes.
  • the molded lead frame is mounted with the anode and the cathode of the light emitting diode chip bonded to each of the polarization wires of the lead frame, and the insulator molding on which the light emitting diode chip is mounted is subjected to silicon molding to attach a lens. do.
  • Such a conventional light emitting diode is 70 to 80% of the supplied power is emitted as heat, and if the heat generated during this operation is not smooth, the efficiency and life will be drastically reduced.
  • the most considered factor in the design of the conventional light emitting diode is the development of a light emitting diode package having a low thermal resistance for high power illumination.
  • the conventional light emitting diode serves as a peeling phenomenon and reflector due to plastic deterioration of the insulator molding due to an increase in temperature when the light emitting diode is driven. This results in problems such as a decrease in luminance due to discoloration of the insulator molding, and an expensive manufacturing cost when the insulator molding is composed of a ceramic.
  • a metal such as copper (Cu) or aluminum (Al) having high thermal conductivity is used to maximize heat dissipation characteristics of a light emitting diode package. do.
  • a light emitting diode package including: a base part of a metal material having a mounting part on which a light emitting diode chip is mounted; A through hole is formed in the central portion, and one side end is bent in a state connected to one end of the base portion, and a metal reflective portion stacked on the top surface of the base portion; A terminal part disposed to be parallel to the base part and spaced apart from the base part and the reflecting part at a predetermined interval; And an insulator inserted between the base part and the terminal part and between the reflecting part and the terminal part to insulate and fix the base part, the reflecting part and the terminal part.
  • a method of manufacturing a light emitting diode package comprising: a strip of metal plate material, a housing connected to the metal plate material by a first support part, and a second support part spaced apart from the housing; Forming a terminal portion connected to the metal plate material by; Bending one side of the housing to form a base part on which a light emitting diode chip is mounted, and stacking a reflector on which a through hole is formed on the base part; And molding the base, the reflecting portion and the terminal portion with an insulator to integrally form the base, the reflecting portion, and the terminal portion.
  • the present invention has the following effects.
  • the base part and the reflecting part accommodating the light emitting diode chip are connected to a metal material such as Cu or Al, the heat dissipation through the large-area heat dissipation housing formed integrally with the base part and the reflecting part is excellent.
  • the reflector does not deform or deteriorate.
  • the surface of the reflector which functions as a reflector is plated with Al having good light reflectance in visible and ultraviolet regions, or Ag having excellent light reflectance in the visible region, thereby increasing light emission efficiency to the outside. You can.
  • the base portion and the reflective portion forming the housing are formed of Al, it is possible to use the plating without mirror processing during the housing processing.
  • the base portion and the reflecting portion can be manufactured integrally by using a stamping and bending process, the number of press processes can be reduced. That is, in the present invention, since the base portion and the reflecting portion are formed on one metal plate, and can be simultaneously formed in one process through bending bonding, the number of manufacturing processes can be reduced.
  • the reflector (Reflector) made of plastic (Plastic) is formed of a reflector made of a metal material, durability and strength can be improved.
  • the housing forming the base part and the reflecting part is formed in a state in which the terminal part and the one metal plate are separated from each other, and can be integrally formed by an insulator, the manufacturing process can be simplified.
  • FIG. 1 is a perspective view of the upper end of the LED package according to the present invention.
  • FIG. 2 is a bottom perspective view of the light emitting diode package shown in FIG. 1.
  • FIG. 2 is a bottom perspective view of the light emitting diode package shown in FIG. 1.
  • FIG 3 is an exemplary view in which the state in which the light emitting diode package is processed according to the light emitting diode package manufacturing method according to the present invention is sequentially displayed.
  • Figure 4 is an exemplary view for explaining a method of forming a housing and a terminal portion of the light emitting diode package manufacturing method according to the present invention.
  • FIG. 5 is an exemplary view for explaining a method of forming a through hole in the method of manufacturing a light emitting diode package according to the present invention.
  • Figure 6 is an exemplary view for explaining a method of forming the insulator insertion surface of the light emitting diode package manufacturing method according to the present invention.
  • Figure 7 is an exemplary view for explaining a method of bending one end of the housing of the light emitting diode package manufacturing method according to the present invention.
  • FIG. 8 is an exemplary view for explaining a state of bending the housing of the light emitting diode package manufacturing method according to the present invention.
  • FIG. 9 is an exemplary view for explaining a method of stacking a reflector on the upper surface of the base portion by bending the housing of the light emitting diode package manufacturing method according to the present invention.
  • FIG. 10 is an exemplary view for explaining a method of plating the surface of the base portion and the reflecting portion of the light emitting diode package manufacturing method according to the present invention.
  • FIG. 11 is an exemplary view for explaining a method of insulating between a base portion and a terminal portion and between a reflecting portion and a terminal portion in a method of manufacturing a light emitting diode package according to the present invention.
  • FIG. 12 is an exemplary view showing a state in which a light emitting diode chip is mounted on a light emitting diode package according to the present invention manufactured according to the light emitting diode package manufacturing method according to the present invention.
  • 13 and 14 are exemplary views showing various forms of through-holes forming the light emitting diode package according to the present invention manufactured according to the light emitting diode package manufacturing method according to the present invention.
  • 15 is a variety of perspective view showing another embodiment of a light emitting diode package according to the present invention.
  • FIG. 1 is a perspective view of the upper end of the LED package according to the present invention
  • Figure 2 is a perspective view of the lower end of the LED package shown in FIG.
  • the light emitting diode package includes a base portion 100 in which a mounting portion 110 on which a light emitting diode chip is mounted, and a through hole 210 in a central portion thereof. Is formed, one end is bent in a state connected to one end of the base portion 100, parallel to the reflecting portion 200, the base portion 100 stacked on the upper surface of the base portion 100
  • the terminal unit 300 which is spaced apart from the base unit 100 and the reflecting unit at a predetermined interval, and between the base unit 100 and the terminal unit 300, and the reflecting unit 200 and the terminal unit ( It is inserted between the 300, and includes an insulator 400 for insulating and fixing the base portion 100, the reflecting portion 200 and the terminal portion 300.
  • the base part 100 has a mounting part 110 on which the light emitting diode chip is mounted.
  • the base unit 100 is connected to the first electrode of the light emitting diode chip through a wire. That is, since the base part 100 is made of metal, the base part 100 may be connected to the first electrode of the light emitting diode chip to supply power to the light emitting diode chip.
  • a base protruding from the side of the base part 100 so that an external power supply terminal and the base part 100 can be easily connected to the base part 100.
  • the external terminal 120 may be formed. That is, since the base part 100 is made of metal, any part of the base part 100 may be connected to an external power supply terminal, but in particular, may be connected through the base outer terminal 120. .
  • the base part 100 since the base part 100 is formed of a metal, the base part 100 may perform a function of releasing heat generated from the light emitting diode chip to the outside.
  • the base part 100 is illustrated in a rectangular plate shape in FIGS. 1 and 2, the shape of the base part 100 may be variously modified.
  • the reflector 200 is bent to the top of the base part 100 and stacked on the top surface of the base part 100.
  • the through hole 210 is formed in the center of the reflector 200.
  • the through hole 210 has a light emitting diode chip mounted on the mounting portion 100 formed on the base portion 100 while the reflecting portion 200 is stacked on the upper surface of the base portion 100. It is formed in the shape surrounding.
  • the inner diameter of the through hole 210 is formed to increase in the direction away from the contact surface where the reflecting portion 200 and the base portion 100 abut. That is, in FIG. 1, the inner diameter of the through hole 210 is the minimum at the contact surface where the reflector 200 and the base part 100 come into contact with each other, and is formed to increase toward the upper end.
  • the through hole 210 may be formed in various forms including not only a circle but also a quadrangle as shown in FIG. 1, wherein the inner diameter is based on an inner diameter of the polygon or a center point of the polygon. It is the spacing between the facing inner faces.
  • the inclined surface 220 having the inner diameter as described above the light emitted from the light emitting diode chip can be efficiently reflected in the upper direction.
  • the reflector 200 since the reflector 200 is formed of a metal, it may perform a function of emitting heat generated from the light emitting diode chip to the outside.
  • the terminal part 300 is spaced apart from the base part 100 and the reflecting part 200 at regular intervals.
  • the terminal unit 300 is connected to the second electrode of the light emitting diode chip through a wire. That is, since the terminal part 300 is formed of metal similarly to the base part 100, the terminal part 300 may be connected to the second electrode of the light emitting diode chip to supply power to the light emitting diode chip.
  • the terminal portion 300 protrudes from the side of the terminal portion 300 so that an external power supply terminal and the terminal portion 300 can be easily connected to the terminal portion 300.
  • 310 may be formed. That is, since the terminal part 300 is made of metal, any part of the terminal part 300 may be connected to an external power supply terminal, but in particular, the terminal part 300 may be connected to the external terminal 310.
  • the terminal unit 300 since the terminal unit 300 is formed of a metal, it may perform a function of dissipating heat generated from the light emitting diode chip to the outside.
  • the base part 100, the reflecting part 200, and the terminal part 300 may be selected from metals such as copper, aluminum, zinc, and nickel having high thermal conductivity.
  • the base part 100, the reflecting part 200 and the terminal part 300 are processed from one metal plate, the above components are formed of the same metal.
  • the metal plate may be formed of any kind of conductive metal, such as copper (Cu), aluminum (Al), or an alloy thereof.
  • the insulator 400 is inserted between the base part 100 and the terminal part 300, and between the reflecting part 200 and the terminal part 300, and the base part 100 and the reflecting part. It performs a function of insulating and fixing the 200 and the terminal 300.
  • the insulator 400 includes the base part 100 connected to the first electrode of the light emitting diode chip and the reflector 200 integrally formed with the base part 100 of the light emitting diode chip. While performing the function of insulating the terminal portion 300 connected to the second electrode, it improves the coupling force of the components, thereby performing the function to be integrally combined. To this end, the insulator 400 may be formed along the periphery of the base part 100, the reflecting part 200, and the terminal part 300, as shown in FIGS. 1 and 2.
  • the insulator 400 may be made of a thermoplastic resin such as LCP, PCT, or PA (nylon), and a thermosetting resin such as silicon and epoxy.
  • the insulator 400 may be formed of glass frit.
  • a method of coating a material as described above using an insert molding method As a molding method for coupling the insulator 400 to the base part 100, the reflecting part 200, and the terminal part 300, a method of coating a material as described above using an insert molding method. Alternatively, a method of dispensing the material as described above may be applied.
  • the reflective part 200 formed of a metal is stacked on the base part 100 formed of a metal.
  • the light emitting diode package according to the present invention can maximize heat dissipation performance and prevent degradation of the light emitting diode chip, thereby extending the life of the light emitting diode chip.
  • a plating layer may be formed on the surface of the base part 100 and the surface of the reflecting part 200, in particular, the inclined surface 220.
  • a plating layer may be formed on the surface of the terminal unit 300.
  • the plating layer may be formed of any one of metals such as aluminum (Al), gold (Au), silver (Ag), nickel (Ni), zinc (Zn), and the like.
  • metals such as aluminum (Al), gold (Au), silver (Ag), nickel (Ni), zinc (Zn), and the like.
  • the plating layer is formed on the metal surface, the plating layer is not deformed or degraded even by heat generated from the light emitting diode chip.
  • the plating layer is formed in the plastic housing, the plating layer is easily deteriorated by heat generated from the light emitting diode chip.
  • FIG. 3 is an exemplary view sequentially showing a state in which a light emitting diode package is processed according to a light emitting diode package manufacturing method according to the present invention
  • FIG. 4 shows a housing and a terminal portion of the light emitting diode package manufacturing method according to the present invention.
  • FIG. 5 is an exemplary view for explaining a method
  • Figure 5 is an exemplary view for explaining a method for forming a through hole in the light emitting diode package manufacturing method according to the invention
  • Figure 6 is an insulator in the light emitting diode package manufacturing method according to the present invention
  • 7 is an exemplary view for explaining a method of forming an insertion surface
  • Figure 7 is an exemplary view for explaining a method of bending one end of the housing of the light emitting diode package manufacturing method according to the present invention
  • Figure 8 is a light emission according to the present invention Exemplary diagram for explaining a state of bending the housing of the diode package manufacturing method
  • Figure 9 is a present invention FIG.
  • FIG. 10 is an exemplary view illustrating a method of bending a housing and stacking a reflective part on an upper surface of a base part of the method of manufacturing a light emitting diode package according to the present invention
  • FIG. 10 illustrates surfaces of a base part and a reflective part of a method of manufacturing a light emitting diode package according to the present invention
  • FIG. 11 is an exemplary view for explaining a plating method
  • FIG. 11 is an exemplary view for explaining a method of insulating between a base part and a terminal part and between a reflecting part and a terminal part in the method of manufacturing a light emitting diode package according to the present invention.
  • FIG. 13 is a view illustrating a state in which a light emitting diode chip is mounted on a light emitting diode package according to the present invention manufactured according to the method of manufacturing a light emitting diode package according to the present invention.
  • FIGS. 13 and 14 illustrate a method of manufacturing a light emitting diode package according to the present invention.
  • the metal plate 900 is stripped and connected to the metal plate 900 by the first support part 130 to the housing 910 and the housing 910.
  • FIG. 3 is an exemplary view sequentially showing a state in which a light emitting diode package is processed according to the light emitting diode package manufacturing method according to the present invention, wherein the light emitting diode package according to the present invention is a metal as shown in FIG. It may be formed by the processing of the plate member 900.
  • the metal plate 900 may be formed of various metals as described above.
  • Forming the terminal unit 300 connected to the metal plate 900 by the step (S702 to S708) may include the following detailed steps.
  • the housing 910 is formed by stripping the metal plate 900.
  • the terminal portion 300 is formed.
  • the housing 910 is connected to the metal plate 900 by the first support 130, and the terminal portion 300 is connected to the metal plate 900 by the second support 140. It is.
  • the housing 910 and the terminal portion 300 may be stripped in a form in which a part of the housing 910 and the terminal portion 300 are not completely separated from the metal plate 900. have.
  • strip method sheet metal processing stamping using a press die, or cutting processing may be applied.
  • the housing 910 and the terminal portion 300 is formed in the metal plate 900 in a completely separated state.
  • the inner diameter of the through hole 210 may be formed to increase in the direction away from the contact surface where the reflector 200 and the base portion 100 abut.
  • the through hole 210 may be formed in a quadrangular shape, as shown in FIGS. 1 to 12, but may be formed in a circular shape as shown in FIG. 13, and a hexagon as shown in FIG. 14. It may be formed in the form, in addition to it may be formed in various forms.
  • the housing in the forming of the insulator insertion surface 230 by processing any one of the surfaces forming the through hole, the housing may include the housing, among the edges surrounding the through hole.
  • the step of reducing the thickness of the insulator insertion surface 230 is performed such that the insulator insertion surface 230 facing the terminal portion does not contact the terminal portion 300 in the step of bending the side end of the 900.
  • the process may be performed by a cutting method or a pressing method.
  • a process of bending one end 240 of the housing 910 is performed. That is, the one end 240 is an end of the reflecting unit 200 formed through the bending step, the one end 240 is in contact with the base portion 100.
  • Steps S710 and S712 of stacking 200 may include the following detailed steps.
  • a process of bending one side of the housing 910 that is not connected to the first support 130 is performed.
  • a stamping process or a bending process may be applied.
  • the bending process as described above may be carried out by the airing method.
  • the base 100, the reflecting unit 200, and the terminal unit 300 are molded by an insulator 400 to form the base 100, the reflecting unit 200, and the terminal unit 300.
  • an insulator 400 to form the base 100, the reflecting unit 200, and the terminal unit 300.
  • the plating layer 500 may be formed using a metal such as aluminum, gold, or silver, and may be formed using at least one of electroplating, sputter deposition, vacuum deposition, and spray deposition. Can be.
  • the plating layer 500 may be formed by forming a plating layer 500 having a high reflectance of light on the surfaces of the base part 100, the reflector 200, and the terminal part 300, thereby maximizing light emission performance. It is performed for the purpose. Conventionally, since a plastic housing is used, a metal surface with good reflectance cannot be formed as in the present invention.
  • the insulator 400 is formed between the base part and the terminal part 410, between the reflecting part 200 and the terminal part 300, and on the outer surface 430 of the base part and the terminal part and the reflecting part. Can be.
  • the components are integrally formed.
  • the molding method since the molding method has been described above, it will not be repeated.
  • a separate metal is laminated or a lamic housing is formed.
  • a method of manufacturing a light emitting diode package according to the present invention since a method of bending a metal of high purity is used, light emission requiring high heat radiation is required. In manufacturing the diode, the manufacturing cost can be significantly reduced.
  • FIG. 12 illustrates a state in which the LED chip 800 is mounted in the LED package according to the present invention manufactured by the LED package manufacturing method as described above.
  • the first electrode of the LED chip 800 may be connected to the base part 100 through a first wire 810, and the second electrode may be connected to the terminal part 300 by a second wire ( The base unit 100 and the terminal unit 300 may be connected to an external power supply terminal to supply power to the first electrode and the second electrode.
  • FIG. 15 is a perspective view showing another embodiment of a light emitting diode package according to the present invention.
  • (a) and (b) show another type of light emitting diode package, (a) shows a state before the insulator is formed, and (b) shows a state where the insulator is formed.
  • (c) and (d) also shows another type of light emitting diode package, (c) shows a state before the insulator is formed, (d) shows a state in which the insulator is formed.
  • the base external terminal 120 is based on the mounting unit 110 on which the light emitting diode chip 800 is mounted. Although formed in a direction perpendicular to the direction, the light emitting diode package illustrated in FIG. 15 is formed such that the base outer terminal 120 faces the terminal outer terminal 130.
  • the base portion outer terminal 120 is connected to the first support portion 130 facing the second support portion 140 on the metal plate 900.
  • the shape of the base outer terminal 120 and the terminal outer terminal 310 to be applied to the light emitting diode package shown in (a) and (b) of FIG. have.
  • the base outer terminal 120 and the terminal outer terminal 310 applied to the present invention may be configured in various forms in addition to those shown in FIGS. 1 and 15 (a) and (b).
  • the base outer terminal 120 and the first support part 130 face the terminal outer terminal 310 and the second support part 140. Since the reflector 200 is not formed as shown in FIG. 8, the reflector 200 may not be bent.
  • the reflector 200 is bent in a vertical direction of a straight line formed by the base outer terminal 120 and the terminal outer terminal 310.
  • the light emitting diode package according to the present invention is to solve the problems of the conventional plastic leaded chip carrier (PLCC) package, in which a high-efficiency, high-rigidity metal housing (base portion and reflecting portion) is insulated by plastic. It is formed in a configuration.
  • PLCC plastic leaded chip carrier
  • the light emitting diode manufacturing method uses a metal plate material such as Cu or Al and a stamping bending bonding process, and relates to a method for manufacturing and manufacturing a high reliability package having excellent high temperature reliability, that is, excellent heat dissipation characteristics. will be.
  • the metal material may be molded by using a stamping molding method to integrally manufacture the base part 100 on which the light emitting diode chip is mounted and the reflecting part 200 which functions as a reflector.
  • the reflector 200 is bent to be joined to the base part 100, and the upper end of the base part is formed.
  • a reflector 200 formed of metal is formed on the surface, instead of a plastic reflector, a reflector 200 formed of metal is formed.
  • the reflective part 200 formed of the metal and the base part 100 are integrated, the cross-sectional area of the metal heat dissipation part can be maximized, and the reflective part 200 is made of metal instead of plastic, which is susceptible to heat. Since it is reinforced, the problem of deformation by heat can be solved.
  • the manufacturing cost can be significantly reduced, and by using a high purity material, the heat dissipation effect can be maximized.
  • the metal surrounds the slope of the organic light emitting diode package, when the light emitting diode chip is mounted and used, deformation of the cup shape due to an increase in temperature can be fundamentally prevented (conventional light emitting diode package). Is plastic and will deform with increasing temperature).
  • the organic light emitting diode package according to the present invention is manufactured using the metal plate material 900 having the same thickness, heat dissipation characteristics may be improved by maximizing the area of the metal having good thermal conductivity.
  • the base part 100 and the reflecting part 200 are integrally formed. That is, the reflecting unit 200 and the base unit 100 are integrally connected and bent therebetween, so that the reflecting unit 200 is integrally laminated on the top surface of the base unit 100 without separation. Can be.
  • the depth that is, the thickness of the reflector 200 may be adjusted according to the shape of the light emitting diode chip. That is, the reflective part 200 and the base part 100 are integrally formed, but only the reflective part 200 is processed by pressing or cutting, such that the thickness of the reflective part 200 is The base portion 100 may have a different thickness.
  • the base portion and the reflecting portion are connected by the same metal material to form a single body, and may be bent and joined one or more times.
  • the shape of the through hole 210 formed in the reflector 200 may be formed in a polygon, such as a triangle, a quadrangle, a pentagon, a hexagon, an octagon, a decagon, or a circle or an ellipse.
  • the base part 100 and the terminal part 300 are separated by an insulator 400.
  • the terminal part 300 may be formed to be spaced apart from the base part 100 in the through hole, or the terminal part outer terminal 310 formed to extend outside the through hole. It may also include.
  • the size of the base unit 100 may be changed according to the number of light emitting diode chips 800 to be mounted, all types of light emitting diode chips from Single Chip to Multi Chip may be applied.
  • a space in which the insulator 400 may be inserted is formed between the reflective part 200 and the terminal part 300 and between the base part 100 and the terminal part 300.
  • the base part 100 and the reflecting part 200 are simultaneously formed in a metal plate material 900 using a press die, and then the reflecting part 200 is formed.
  • the terminal part 300 may also be formed together with the base part 100 and the reflecting part 200 in the metal plate 900.
  • the shape of the bonding and bending of the reflector, and the angle of the inclined surface of the reflector can be freely adjusted.
  • the material of the metal plate 900 Cu, Al, Mg or their compounds and all metals having excellent mechanical properties and excellent thermal conductivity may be applied.
  • the surface of the base portion 100, the reflecting portion 200 and the terminal portion 300 may be plated with Al, Ag, Au, etc. to a predetermined thickness to increase the light emission effect, the electroplating method as a plating method , Sputtering, vacuum deposition, spraying, etc. may be applied.
  • thermoplastic resins such as LCP, PCT, and PA, and all thermosetting resins such as silicon and epoxy, or glass frit may be used.
  • the insulator 400 may be coated by insert molding. How to. It may be injected between the base portion 100 and the terminal portion 300, the reflecting portion 200, the terminal portion 300, or the like through a method of dispensing the insulator.

Abstract

The present invention relates to a light emitting diode package. Particularly, the purpose of the present invention is to provide a light emitting diode package in which a reflection part, which is laminated on the upper surface of a base part having a light emitting diode chip mounted thereon, is formed integrally with the base part, and the reflection part and the base part are made of metal; and a manufacturing method therefor. For this purpose, the light emitting diode package according to the present invention comprises the metallic base part having a mounting section on which the light emitting diode chip is mounted; the metallic reflection part having a through hole in the center thereof and laminated on the upper surface of the base part in such a manner that the end of one side of the reflection part is bent in the state of being connected with the end of one side of the base part; a terminal part arranged in parallel with the base part and separated from the base part and the reflection part at regular intervals; and an insulator inserted between the base part and the terminal part and between the reflection part and the terminal part, thereby insulating and fixing the base part, the reflection part and the terminal part.

Description

발광다이오드 패키지 및 그 제조 방법Light emitting diode package and its manufacturing method
본 발명은 발광다이오드 패키지 및 그 제조 방법에 관한 것으로, 특히, 방열효과가 우수한, 발광다이오드 패키지 및 그 제조 방법에 관한 것이다.The present invention relates to a light emitting diode package and a method for manufacturing the same, and more particularly, to a light emitting diode package and a method for manufacturing the same having excellent heat dissipation effect.
종래 PN타입의 발광다이오드(LED : Light Emitting diode)는 수명이 반영구적, 환경 친화적이며, 전통적인 광원에 비하여 효율이 우수하다. 따라서, 액정표시장치의 백라이트(backlight), 경관, 자동차의 라이트 및 일반 조명 등이, 발광다이오드로 급속하게 대체되고 있다. The light emitting diode (LED) of the conventional PN type is semi-permanent and environmentally friendly, and its efficiency is superior to that of a conventional light source. Accordingly, backlights, landscapes, automobile lights and general lighting of liquid crystal displays are rapidly being replaced by light emitting diodes.
현재, 상용화된 대부분의 PN타입의 종래 발광다이오드 패키지를 이루는 구성을 살펴보면, 종래 발광다이오드 패키지는 리드프레임을 에노드와 캐소드로 분리시키고, 분리된 리드프레임에 사출성형용 수지를 이용한 절연체 몰딩을 결합하게 된다.At present, most of the commercially available PN-type conventional light emitting diode packages are constructed. In the conventional light emitting diode package, a lead frame is separated into an anode and a cathode, and an insulator molding using an injection molding resin is coupled to the separated lead frame. Done.
이 경우, 절연체 몰딩은 리드프레임의 분극들을 절연함과 동시에 발광다이오드에서 발생하는 광을 반사시키는 리플렉터의 역할을 수행하게 된다.In this case, the insulator molding serves as a reflector to insulate the polarizations of the lead frame and to reflect light generated from the light emitting diodes.
이후, 몰딩된 리드프레임에는 발광다이오드 칩의 에노드와 캐소드를 리드프레임의 각각의 분극 와이어와 본딩시킨 상태로 실장시키고, 발광다이오드 칩이 실장된 절연체 몰딩에는 실리콘 몰딩을 진행한 이후 렌즈를 부착하게 된다.Subsequently, the molded lead frame is mounted with the anode and the cathode of the light emitting diode chip bonded to each of the polarization wires of the lead frame, and the insulator molding on which the light emitting diode chip is mounted is subjected to silicon molding to attach a lens. do.
이러한 종래 발광다이오드는 공급된 전력의 70~80%가 열로 방출되며, 이러한 동작 중 발생한 열의 방출이 원활하지 않을 경우 효율 및 수명의 급격한 감소를 가져오게 된다.Such a conventional light emitting diode is 70 to 80% of the supplied power is emitted as heat, and if the heat generated during this operation is not smooth, the efficiency and life will be drastically reduced.
따라서, 종래 발광다이오드의 설계시 가장 고려되고 있는 요인은 바로 고출력 조명을 위하여 낮은 열저항을 갖는 발광다이오드 패키지의 개발이다.Therefore, the most considered factor in the design of the conventional light emitting diode is the development of a light emitting diode package having a low thermal resistance for high power illumination.
하지만, 현재, 종래 발광다이오드는 리드프레임의 분극을 분리하는 절연체 몰딩이 리플렉터 역할을 수행하기 때문에, 발광다이오드의 구동 시 온도 증가에 따른 절연체 몰딩의 플라스틱(plastic) 열화로 인한 박리 현상, 리플렉터 역할을 하는 절연체 몰딩의 변색에 따른 휘도 저하 및, 절연체 몰딩을 세락믹으로 구성하는 경우에 고비용의 제조 단가를 요구하게 되는등의 문제점들을 야기하고 있다.However, at present, since the insulator molding that separates the polarization of the lead frame serves as a reflector, the conventional light emitting diode serves as a peeling phenomenon and reflector due to plastic deterioration of the insulator molding due to an increase in temperature when the light emitting diode is driven. This results in problems such as a decrease in luminance due to discoloration of the insulator molding, and an expensive manufacturing cost when the insulator molding is composed of a ceramic.
한편, 리드프레임의 열전도도를 향상시킴으로써 방열성능을 높이기 위한 종래 발광다이오드의 경우에는 열전도도가 높은 구리(Cu)나 알루미늄(Al)과 같은 금속을 사용함으로써, 발광다이오드 패키지의 방열 특성을 극대화하게 된다.Meanwhile, in the case of a conventional light emitting diode for improving heat dissipation performance by improving thermal conductivity of a lead frame, a metal such as copper (Cu) or aluminum (Al) having high thermal conductivity is used to maximize heat dissipation characteristics of a light emitting diode package. do.
이러한 종래 발광다이오드 패키지의 일 예로써, 대한민국 공개 특허 번호 10-2009-0046316호의 종래 기술에서는 금속 분말을 유기 바인더와 혼합하여 사출한 후, 바인더를 제거하고 소결시킨 상태로 발광다이오드 패키지를 제고하게 되는데, 이 경우, 단순한 사출성형만으로는 매끄러운 외관이 나오지 않아 2차 가공으로 외관의 치수 등을 다시 조절하는 문제에 의해 제조 비용이 많이 소요되는 문제점과, 금속성형물 내에 불순물이 남아있어 열 전달 특성의 저하를 가져오는 문제점 및, 전극으로 사용되는 리드프레임과, 상기 리드프레임을 감싸는 하우징부를 별도로 제작해야하는 문제점들을 야기시키고 있다.As an example of such a conventional light emitting diode package, in the prior art of the Republic of Korea Patent Publication No. 10-2009-0046316, the metal powder is injected and mixed with an organic binder, and then the light emitting diode package is improved while removing the binder and sintering. In this case, a simple injection molding alone does not produce a smooth appearance, and the manufacturing process is expensive due to the problem of re-adjusting the dimensions of the appearance by the secondary processing, and impurities in the metal molding remain to reduce the heat transfer characteristics. The problem of bringing, and the lead frame used as an electrode, and the problem of having to manufacture a housing part surrounding the lead frame separately.
본 발명은 상술한 문제점을 해결하기 위한 것으로서, 발광다이오드 칩이 실장되는 베이스부의 상단면에 적층되는 반사부가, 상기 베이스부와 일체로 형성되어 있으며, 상기 반사부와 상기 베이스부가 금속으로 형성되어 있는, 발광다이오드 패키지 및 그 제조 방법을 제공하는 것을 기술적 과제로 한다. SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, wherein a reflecting portion stacked on an upper surface of a base portion on which a light emitting diode chip is mounted is integrally formed with the base portion, and the reflecting portion and the base portion are formed of metal. Another object of the present invention is to provide a light emitting diode package and a method of manufacturing the same.
상술한 기술적 과제를 달성하기 위한 본 발명에 따른 발광다이오드 패키지는, 발광다이오드 칩이 실장되는 실장부가 형성되어 있는 금속재질의 베이스부; 중심부분에는 관통홀이 형성되어 있으며, 일측끝단이 상기 베이스부의 일측끝단과 연결된 상태로 절곡되어, 상기 베이스부의 상단면에 적층되는 금속재질의 반사부; 상기 베이스부와 나란하게 배치되어 있으며, 상기 베이스부 및 상기 반사부와 일정간격으로 이격되어 있는 단자부; 및 상기 베이스부와 상기 단자부 사이, 및 상기 반사부와 상기 단자부 사이에 삽입되어, 상기 베이스부, 상기 반사부와 상기 단자부를 절연 및 고정시키는 절연체를 포함한다.According to an aspect of the present invention, there is provided a light emitting diode package including: a base part of a metal material having a mounting part on which a light emitting diode chip is mounted; A through hole is formed in the central portion, and one side end is bent in a state connected to one end of the base portion, and a metal reflective portion stacked on the top surface of the base portion; A terminal part disposed to be parallel to the base part and spaced apart from the base part and the reflecting part at a predetermined interval; And an insulator inserted between the base part and the terminal part and between the reflecting part and the terminal part to insulate and fix the base part, the reflecting part and the terminal part.
상술한 기술적 과제를 달성하기 위한 본 발명에 따른 발광다이오드 패키지 제조 방법은, 금속판재를 스트립하여, 제1지지부에 의해 상기 금속판재에 연결되어 있는 하우징과, 상기 하우징에 이격된 상태에서 제2지지부에 의해 상기 금속판재에 연결되어 있는 단자부를 형성하는 단계; 상기 하우징의 일측을 절곡하여, 하부에는 발광다이오드 칩이 실장되는 베이스부를 형성하고, 상기 베이스부의 상부에는 관통홀이 형성되어 있는 반사부를 적층하는 단계; 및 상기 베이스와, 상기 반사부와 상기 단자부를 절연체로 몰딩하여, 상기 베이스와, 상기 반사부와, 상기 단자부를 일체로 형성하는 단계를 포함한다.According to an aspect of the present invention, there is provided a method of manufacturing a light emitting diode package according to an embodiment of the present invention, comprising: a strip of metal plate material, a housing connected to the metal plate material by a first support part, and a second support part spaced apart from the housing; Forming a terminal portion connected to the metal plate material by; Bending one side of the housing to form a base part on which a light emitting diode chip is mounted, and stacking a reflector on which a through hole is formed on the base part; And molding the base, the reflecting portion and the terminal portion with an insulator to integrally form the base, the reflecting portion, and the terminal portion.
본 발명은 다음과 같은 효과를 가지고 있다.The present invention has the following effects.
첫째, 발광다이오드 칩을 수용하는 베이스부와 반사부가, Cu 또는 Al 등의 금속재질로 연결되어 있기 때문에, 베이스부와 반사부가 일체로 형성된 대면적 방열 하우징을 통한 열 방출이 우수하며, 장시간 사용 시에도 반사부가 변형 및 열화되지 않는다. First, since the base part and the reflecting part accommodating the light emitting diode chip are connected to a metal material such as Cu or Al, the heat dissipation through the large-area heat dissipation housing formed integrally with the base part and the reflecting part is excellent. The reflector does not deform or deteriorate.
둘째, 반사판의 기능을 수행하는 반사부의 표면에, 가시광 및 자외선 영역에서도 빛 반사율이 좋은 Al을 도금하거나, 또는, 가시광 영역에서 빛 반사율이 우수한 Ag 등을 도금함으로써, 외부로의 빛 방출 효율을 증대시킬 수 있다. 특히, 하우징을 형성하는 베이스부와 반사부가 Al으로 형성된 경우, 하우징 가공시 경면 가공을 통하여 무도금 사용이 가능하다.Second, the surface of the reflector which functions as a reflector is plated with Al having good light reflectance in visible and ultraviolet regions, or Ag having excellent light reflectance in the visible region, thereby increasing light emission efficiency to the outside. You can. In particular, when the base portion and the reflective portion forming the housing are formed of Al, it is possible to use the plating without mirror processing during the housing processing.
셋째, 스탬플링(stamping) 및 벤딩(bending) 공정을 이용하여, 베이스부와 반사부가 일체형으로 제작될 수 있기 때문에, 프레스 공정 수가 줄어들 수 있다. 즉, 본 발명에서는, 베이스부와 반사부가 하나의 금속판재에 형성된 후, 벤딩(Bending) 접합을 통하여 한 공정에서 동시에 형성될 수 있기 때문에 제조공정 수가 줄어들 수 있다. Third, since the base portion and the reflecting portion can be manufactured integrally by using a stamping and bending process, the number of press processes can be reduced. That is, in the present invention, since the base portion and the reflecting portion are formed on one metal plate, and can be simultaneously formed in one process through bending bonding, the number of manufacturing processes can be reduced.
넷째, 종래에 플라스틱(Plastic)으로 이루어진 반사판(Reflector)이 금속재질의 반사부로 형성되기 때문에, 내구성과 강도가 향상될 수 있다. Fourth, since the reflector (Reflector) made of plastic (Plastic) is formed of a reflector made of a metal material, durability and strength can be improved.
다섯째, 베이스부와 반사부를 형성하는 하우징이, 단자부와 하나의 금속판재에서 서로 이격된 상태로 형성된 후, 절연체에 의해 일체로 형성될 수 있기 때문에 제조 공정이 단순화될 수 있다. Fifth, since the housing forming the base part and the reflecting part is formed in a state in which the terminal part and the one metal plate are separated from each other, and can be integrally formed by an insulator, the manufacturing process can be simplified.
도 1은 본 발명에 따른 발광다이오드 패키지의 상단부 사시도.1 is a perspective view of the upper end of the LED package according to the present invention.
도 2는 도 1에 도시된 발광다이오드 패키지의 하단부 사시도. FIG. 2 is a bottom perspective view of the light emitting diode package shown in FIG. 1. FIG.
도 3은 본 발명에 따른 발광다이오드 패키지 제조 방법에 따라 발광다이오드 패키지가 가공되는 상태가 순차적으로 표시되어 있는 예시도.3 is an exemplary view in which the state in which the light emitting diode package is processed according to the light emitting diode package manufacturing method according to the present invention is sequentially displayed.
도 4는 본 발명에 따른 발광다이오드 패키지 제조 방법 중 하우징 및 단자부를 형성하는 방법을 설명하기 위한 예시도.Figure 4 is an exemplary view for explaining a method of forming a housing and a terminal portion of the light emitting diode package manufacturing method according to the present invention.
도 5는 본 발명에 따른 발광다이오드 패키지 제조 방법 중 관통홀을 형성하는 방법을 설명하기 위한 예시도.5 is an exemplary view for explaining a method of forming a through hole in the method of manufacturing a light emitting diode package according to the present invention.
도 6은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 절연체삽입면을 형성하는 방법을 설명하기 위한 예시도.Figure 6 is an exemplary view for explaining a method of forming the insulator insertion surface of the light emitting diode package manufacturing method according to the present invention.
도 7은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 하우징의 일측 끝단을 굽히는 방법을 설명하기 위한 예시도.Figure 7 is an exemplary view for explaining a method of bending one end of the housing of the light emitting diode package manufacturing method according to the present invention.
도 8은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 하우징을 절곡시키는 상태를 설명하기 위한 예시도.8 is an exemplary view for explaining a state of bending the housing of the light emitting diode package manufacturing method according to the present invention.
도 9는 본 발명에 따른 발광다이오드 패키지 제조 방법 중 하우징을 절곡시켜 반사부를 베이스부의 상단면에 적층시키는 방법을 설명하기 위한 예시도.9 is an exemplary view for explaining a method of stacking a reflector on the upper surface of the base portion by bending the housing of the light emitting diode package manufacturing method according to the present invention.
도 10은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 베이스부 및 반사부의 표면을 도금하는 방법을 설명하기 위한 예시도.10 is an exemplary view for explaining a method of plating the surface of the base portion and the reflecting portion of the light emitting diode package manufacturing method according to the present invention.
도 11은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 베이스부와 단자부 사이 및 반사부와 단자부 사이를 절연시키는 방법을 설명하기 위한 예시도.11 is an exemplary view for explaining a method of insulating between a base portion and a terminal portion and between a reflecting portion and a terminal portion in a method of manufacturing a light emitting diode package according to the present invention.
도 12는 본 발명에 따른 발광다이오드 패키지 제조 방법에 따라 제조된 본 발명에 따른 발광다이오드 패키지에 발광다이오드 칩이 장착되어 있는 상태를 나타낸 예시도.12 is an exemplary view showing a state in which a light emitting diode chip is mounted on a light emitting diode package according to the present invention manufactured according to the light emitting diode package manufacturing method according to the present invention.
도 13 및 도 14는 본 발명에 따른 발광다이오드 패키지 제조 방법에 따라 제조된 본 발명에 따른 발광다이오드 패키지를 형성하는 관통홀의 다양한 형태를 나타낸 예시도. 13 and 14 are exemplary views showing various forms of through-holes forming the light emitting diode package according to the present invention manufactured according to the light emitting diode package manufacturing method according to the present invention.
도 15는 본 발명에 따른 발광다이오드 패키지의 또 다른 일실시예를 나타낸 다양한 사시도.15 is a variety of perspective view showing another embodiment of a light emitting diode package according to the present invention.
이하, 첨부된 도면을 참조하여 본 발명에 따른 실시예를 상세히 설명하기로 한다. 이하의 설명에서는 다양한 실시예에 대해 설명하는 경우, 동일한 구성에 대해서는 동일 도면부호로 도시하기로 하며, 이에 대한 중복적인 설명은 생략하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, when the various embodiments are described, the same components will be denoted by the same reference numerals, and redundant description thereof will be omitted.
도 1은 본 발명에 따른 발광다이오드 패키지의 상단부 사시도이며, 도 2는 도 1에 도시된 발광다이오드 패키지의 하단부 사시도이다. 1 is a perspective view of the upper end of the LED package according to the present invention, Figure 2 is a perspective view of the lower end of the LED package shown in FIG.
본 발명에 따른 발광다이오드 패키지는, 도 1 및 도 2에 도시된 바와 같이, 발광다이오드 칩이 실장되는 실장부(110)가 형성되어 있는 베이스부(100), 중심부분에는 관통홀(210)이 형성되어 있으며, 일측끝단이 상기 베이스부(100)의 일측끝단과 연결된 상태로 절곡되어, 상기 베이스부(100)의 상단면에 적층되는 반사부(200), 상기 베이스부(100)와 나란하게 배치되어 있으며, 상기 베이스부(100) 및 상기 반사부와 일정간격으로 이격되어 있는 단자부(300) 및 상기 베이스부(100)와 상기 단자부(300) 사이 및 상기 반사부(200)와 상기 단자부(300) 사이에 삽입되어, 상기 베이스부(100), 상기 반사부(200)와 상기 단자부(300)를 절연 및 고정시키는 절연체(400)를 포함한다. As shown in FIGS. 1 and 2, the light emitting diode package according to the present invention includes a base portion 100 in which a mounting portion 110 on which a light emitting diode chip is mounted, and a through hole 210 in a central portion thereof. Is formed, one end is bent in a state connected to one end of the base portion 100, parallel to the reflecting portion 200, the base portion 100 stacked on the upper surface of the base portion 100 The terminal unit 300, which is spaced apart from the base unit 100 and the reflecting unit at a predetermined interval, and between the base unit 100 and the terminal unit 300, and the reflecting unit 200 and the terminal unit ( It is inserted between the 300, and includes an insulator 400 for insulating and fixing the base portion 100, the reflecting portion 200 and the terminal portion 300.
우선, 상기 베이스부(100)는 상기 반사부(200)에는 발광다이오드 칩이 실장되는 실장부(110)가 형성되어 있다.First, the base part 100 has a mounting part 110 on which the light emitting diode chip is mounted.
상기 베이스부(100)는, 상기 발광다이오드 칩의 제1전극과 와이어를 통해 연결된다. 즉, 상기 베이스부(100)는 금속으로 형성되어 있기 때문에, 상기 발광다이오드 칩의 제1전극과 연결되어, 상기 발광다이오드 칩으로 전원을 공급할 수 있다.The base unit 100 is connected to the first electrode of the light emitting diode chip through a wire. That is, since the base part 100 is made of metal, the base part 100 may be connected to the first electrode of the light emitting diode chip to supply power to the light emitting diode chip.
상기 베이스부(100)에는 외부의 전원공급단자와 상기 베이스부(100)가 간단히 접속될 수 있도록, 도 1 및 도 2에 도시된 바와 같이, 상기 베이스부(100)의 측면으로부터 돌출되어 있는 베이스외부단자(120)가 형성될 수 있다. 즉, 상기 베이스부(100)는 금속으로 형성되어 있기 때문에, 상기 베이스부(100) 중 어떠한 부분이라도 외부의 전원공급단자와 연결될 수 있으나, 특히, 상기 베이스외부단자(120)를 통해 연결될 수 있다.As shown in FIGS. 1 and 2, a base protruding from the side of the base part 100 so that an external power supply terminal and the base part 100 can be easily connected to the base part 100. The external terminal 120 may be formed. That is, since the base part 100 is made of metal, any part of the base part 100 may be connected to an external power supply terminal, but in particular, may be connected through the base outer terminal 120. .
또한, 상기 베이스부(100)는 금속으로 형성되어 있기 때문에, 상기 발광다이오드 칩으로부터 발생되는 열을 외부로 방출하는 기능을 수행할 수 있다. In addition, since the base part 100 is formed of a metal, the base part 100 may perform a function of releasing heat generated from the light emitting diode chip to the outside.
상기 베이스부(100)는, 도 1 및 도 2에서 사각형의 판형상으로 도시되어 있으나, 상기 베이스부(100)의 형상은 다양하게 변형될 수 있다.Although the base part 100 is illustrated in a rectangular plate shape in FIGS. 1 and 2, the shape of the base part 100 may be variously modified.
다음, 상기 반사부(200)는 상기 베이스부(100)와 일체로 형성된 상태에서, 상기 베이스부(100)의 상단으로 절곡되어 상기 베이스부(100)의 상단면에 적층된다.Next, in the state in which the reflector 200 is integrally formed with the base part 100, the reflector 200 is bent to the top of the base part 100 and stacked on the top surface of the base part 100.
상기 반사부(200)의 중심에는 관통홀(210)이 형성되어 있다. 상기 관통홀(210)은, 상기 반사부(200)가 상기 베이스부(100)의 상단면에 적층된 상태에서, 상기 베이스부(100)에 형성된 상기 실장부(100)에 실장되는 발광다이오드 칩을 둘러싸고 있는 형태로 형성된다. The through hole 210 is formed in the center of the reflector 200. The through hole 210 has a light emitting diode chip mounted on the mounting portion 100 formed on the base portion 100 while the reflecting portion 200 is stacked on the upper surface of the base portion 100. It is formed in the shape surrounding.
상기 관통홀(210)의 내경은, 상기 반사부(200)와 상기 베이스부(100)가 맞닿는 접촉면으로부터 멀어지는 방향으로 갈수록, 커지도록 형성되어 있다. 즉, 도 1에서, 상기 관통홀(210)의 내경은, 상기 반사부(200)와 상기 베이스부(100)가 맞닿는 접촉면에서 최소이며, 상단부로 갈수록 커지도록 형성되어 있다. 여기서, 상기 관통홀(210)은 원뿐만 아니라, 도 1에 도시된 바와 같은 4각형을 포함한 다양한 형태로 형성될 수 있으며, 상기 내경이란, 상기 다각형의 내부 지름 또는 상기 다각형의 중심점을 기준으로 서로 마주보고 있는 내부면들 간의 간격을 말하는 것이다.The inner diameter of the through hole 210 is formed to increase in the direction away from the contact surface where the reflecting portion 200 and the base portion 100 abut. That is, in FIG. 1, the inner diameter of the through hole 210 is the minimum at the contact surface where the reflector 200 and the base part 100 come into contact with each other, and is formed to increase toward the upper end. Here, the through hole 210 may be formed in various forms including not only a circle but also a quadrangle as shown in FIG. 1, wherein the inner diameter is based on an inner diameter of the polygon or a center point of the polygon. It is the spacing between the facing inner faces.
상기한 바와 같은 내경으로 형성된 경사면(220)에 의해, 상기 발광다이오드 칩으로부터 방출된 광은, 상단방향으로 효율적으로 반사될 수 있다.By the inclined surface 220 having the inner diameter as described above, the light emitted from the light emitting diode chip can be efficiently reflected in the upper direction.
또한, 상기 반사부(200)는 금속으로 형성되어 있기 때문에, 상기 발광다이오드 칩으로부터 발생되는 열을 외부로 방출하는 기능을 수행할 수 있다. In addition, since the reflector 200 is formed of a metal, it may perform a function of emitting heat generated from the light emitting diode chip to the outside.
다음, 상기 단자부(300)는, 상기 베이스부(100) 및 상기 반사부(200)와 일정한 간격으로 이격되어 있다. Next, the terminal part 300 is spaced apart from the base part 100 and the reflecting part 200 at regular intervals.
상기 단자부(300)는 상기 발광다이오드 칩의 제2전극과 와이어를 통해 연결된다. 즉, 상기 단자부(300)는 베이스부(100)와 마찬가지로 금속으로 형성되어 있기 때문에, 상기 발광다이오드 칩의 제2전극과 연결되어, 상기 발광다이오드 칩으로 전원을 공급할 수 있다.The terminal unit 300 is connected to the second electrode of the light emitting diode chip through a wire. That is, since the terminal part 300 is formed of metal similarly to the base part 100, the terminal part 300 may be connected to the second electrode of the light emitting diode chip to supply power to the light emitting diode chip.
상기 단자부(300)에는 외부의 전원공급단자와 상기 단자부(300)가 간단히 접속될 수 있도록, 도 1 및 도 2에 도시된 바와 같이, 상기 단자부(300)의 측면으로부터 돌출되어 있는 단자부외부단자(310)가 형성될 수 있다. 즉, 상기 단자부(300)는 금속으로 형성되어 있기 때문에, 상기 단자부(300) 중 어떠한 부분이라도 외부의 전원공급단자와 연결될 수 있으나, 특히, 상기 단자부외부단자(310)를 통해 연결될 수 있다.As shown in FIGS. 1 and 2, the terminal portion 300 protrudes from the side of the terminal portion 300 so that an external power supply terminal and the terminal portion 300 can be easily connected to the terminal portion 300. 310 may be formed. That is, since the terminal part 300 is made of metal, any part of the terminal part 300 may be connected to an external power supply terminal, but in particular, the terminal part 300 may be connected to the external terminal 310.
또한, 상기 단자부(300)는 금속으로 형성되어 있기 때문에, 상기 발광다이오드 칩으로부터 발생되는 열을 외부로 방출하는 기능을 수행할 수 있다. In addition, since the terminal unit 300 is formed of a metal, it may perform a function of dissipating heat generated from the light emitting diode chip to the outside.
상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)는, 열전도성이 강한 구리, 알루미늄, 아연 및 니켈 등과 같은 금속들 중에서 선택될 수 있다. The base part 100, the reflecting part 200, and the terminal part 300 may be selected from metals such as copper, aluminum, zinc, and nickel having high thermal conductivity.
특히, 상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)는, 하나의 금속판재로부터 가공된 것이기 때문에, 상기 구성들은 동일한 금속으로 형성되어 있다. In particular, since the base part 100, the reflecting part 200 and the terminal part 300 are processed from one metal plate, the above components are formed of the same metal.
상기 금속판재는, 구리(Cu), 알루미늄(Al) 또는 그 합금 등과 같이, 전도성이 있는 모든 종류의 금속으로 형성될 수 있다.The metal plate may be formed of any kind of conductive metal, such as copper (Cu), aluminum (Al), or an alloy thereof.
다음, 상기 절연체(400)는, 상기 베이스부(100)와 상기 단자부(300) 사이 및 상기 반사부(200)와 상기 단자부(300) 사이에 삽입되어, 상기 베이스부(100), 상기 반사부(200)와 상기 단자부(300)를 절연 및 고정시키는 기능을 수행한다.Next, the insulator 400 is inserted between the base part 100 and the terminal part 300, and between the reflecting part 200 and the terminal part 300, and the base part 100 and the reflecting part. It performs a function of insulating and fixing the 200 and the terminal 300.
즉, 상기 절연체(400)는, 발광다이오드 칩의 제1전극과 연결되는 베이스부(100) 및 상기 베이스부(100)와 일체로 형성되어 있는 상기 반사부(200)를, 상기 발광다이오드 칩의 제2전극과 연결되는 상기 단자부(300)와 절연시키는 기능을 수행하는 한편, 상기 구성들의 결합력을 향상시켜, 상기 구성들이 일체로 결합되도록 하는 기능을 수행한다. 이를 위해, 상기 절연체(400)는 도 1 및 도 2에 도시된 바와 같이, 상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)의 외곽을 따라 형성될 수 있다. That is, the insulator 400 includes the base part 100 connected to the first electrode of the light emitting diode chip and the reflector 200 integrally formed with the base part 100 of the light emitting diode chip. While performing the function of insulating the terminal portion 300 connected to the second electrode, it improves the coupling force of the components, thereby performing the function to be integrally combined. To this end, the insulator 400 may be formed along the periphery of the base part 100, the reflecting part 200, and the terminal part 300, as shown in FIGS. 1 and 2.
상기 절연체(400)의 재질은, LCP, PCT, PA(나일론)와 같은 열가소성 수지와, 실리콘과 에폭시와 같은 열경화성 수지로 이루어질 수 있다. 이외에도, 상기 절연체(400)는 글래스 프릿(Glass frit)으로 형성될 수도 있다.The insulator 400 may be made of a thermoplastic resin such as LCP, PCT, or PA (nylon), and a thermosetting resin such as silicon and epoxy. In addition, the insulator 400 may be formed of glass frit.
또한, 절연체(400)를 상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)에 결합시키는 몰딩 방법으로는, 상기한 바와 같은 재질을 인서트(insert) 몰딩 방식으로 코팅하는 방법, 또는, 상기한 바와 같은 재질을 디스펜싱(Dispensing)하는 방법 등이 적용될 수 있다. In addition, as a molding method for coupling the insulator 400 to the base part 100, the reflecting part 200, and the terminal part 300, a method of coating a material as described above using an insert molding method. Alternatively, a method of dispensing the material as described above may be applied.
상기한 바와 같은 본 발명에 따른 발광다이오드 패키지는, 금속으로 형성된 상기 베이스부(100)에 금속으로 형성된 상기 반사부(200)가 적층된다. In the light emitting diode package according to the present invention as described above, the reflective part 200 formed of a metal is stacked on the base part 100 formed of a metal.
따라서, 발광다이오드 칩에 가장 가깝게 배열되는 모든 구성들이, 열전도성이 있는 금속으로 배치되기 때문에, 발광다이오드 칩으로부터 발생된 열을 방출시키는 면적이 최대화되므로, 종래의 발광다이오드 패키지보다 방열성능이 대폭으로 향상될 수 있다. Therefore, since all the components arranged closest to the light emitting diode chip are arranged with a thermally conductive metal, the area for dissipating heat generated from the light emitting diode chip is maximized, so that the heat dissipation performance is significantly larger than that of the conventional light emitting diode package. Can be improved.
이로 인해, 본 발명에 따른 발광다이오드 패키지는, 방열성능이 극대화되어, 발광다이오드 칩의 열화 등을 방지함으로서, 발광다이오드 칩의 수명을 연장시킬 수 있다. For this reason, the light emitting diode package according to the present invention can maximize heat dissipation performance and prevent degradation of the light emitting diode chip, thereby extending the life of the light emitting diode chip.
이에 반하여, 종래의 발광다이오드 패키지는 발광다이오드 칩이 안착되는 부분만을 금속으로 형성하고, 발광다이오드 칩의 측면부근에는 플라스틱 재질의 사출성형물이 있기 때문에, 본 발명에 따른 발광다이오드 패키지보다 방열효율이 저조할 수밖에 없다.On the contrary, in the conventional LED package, only a portion where the LED chip is seated is formed of a metal, and since the injection molding material is made of plastic near the side of the LED chip, the heat dissipation efficiency is lower than that of the LED package according to the present invention. Nothing else but to do.
마지막으로, 상기 베이스부(100)의 표면과 상기 반사부(200)의 표면, 특히, 상기 경사면(220)에는 도금층이 형성될 수 있다. 또한, 상기 단자부(300)의 표면에도 도금층이 형성될 수 있다. Finally, a plating layer may be formed on the surface of the base part 100 and the surface of the reflecting part 200, in particular, the inclined surface 220. In addition, a plating layer may be formed on the surface of the terminal unit 300.
상기 도금층은 알루미늄(Al), 금(Au), 은(Ag), 니켈(Ni), 아연(Zn) 등과 같은 금속들 중 어느 하나로 형성될 수 있다. 이로 인해, 상기 베이스부(100)의 표면에 실장되는 발광다이오드 칩에서 발생되는 광이, 상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)에서 반사되는 효율이 증가하여, 상기 반사부(200)의 상단부로 유도되는 광의 양이 증가될 수 있다. The plating layer may be formed of any one of metals such as aluminum (Al), gold (Au), silver (Ag), nickel (Ni), zinc (Zn), and the like. As a result, the efficiency of light reflected from the light emitting diode chip mounted on the surface of the base part 100 is reflected by the base part 100, the reflecting part 200, and the terminal part 300. The amount of light guided to the upper end of the reflector 200 may be increased.
특히, 상기 도금층은 금속 표면에 형성되므로, 발광다이오드 칩에서 발생하는 열에 의해서도 변형이나 열화되지 않게 된다. 종래의 발광다이오드 패키지에서는, 플라스틱 하우징에 도금층이 형성되므로, 발광다이오드 칩에서 발생되는 열에 의해 도금층이 쉽게 열화 된다.In particular, since the plating layer is formed on the metal surface, the plating layer is not deformed or degraded even by heat generated from the light emitting diode chip. In the conventional light emitting diode package, since the plating layer is formed in the plastic housing, the plating layer is easily deteriorated by heat generated from the light emitting diode chip.
이하에서는 본 발명에 따른 발광다이오드 패키지 제조 방법이 설명된다. 이하의 설명 중, 상기 발광다이오드 패키지에 대한 설명과 중복되는 내용은, 생략되거나 또는 간단히 설명된다. Hereinafter, a method of manufacturing a light emitting diode package according to the present invention will be described. In the following description, the content overlapping with the description of the light emitting diode package is omitted or simply described.
도 3은 본 발명에 따른 발광다이오드 패키지 제조 방법에 따라 발광다이오드 패키지가 가공되는 상태가 순차적으로 표시되어 있는 예시도이고, 도 4는 본 발명에 따른 발광다이오드 패키지 제조 방법 중 하우징 및 단자부를 형성하는 방법을 설명하기 위한 예시도이고, 도 5는 본 발명에 따른 발광다이오드 패키지 제조 방법 중 관통홀을 형성하는 방법을 설명하기 위한 예시도이고, 도 6은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 절연체삽입면을 형성하는 방법을 설명하기 위한 예시도이고, 도 7은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 하우징의 일측 끝단을 굽히는 방법을 설명하기 위한 예시도이고, 도 8은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 하우징을 절곡시키는 상태를 설명하기 위한 예시도이고, 도 9는 본 발명에 따른 발광다이오드 패키지 제조 방법 중 하우징을 절곡시켜 반사부를 베이스부의 상단면에 적층시키는 방법을 설명하기 위한 예시도이고, 도 10은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 베이스부 및 반사부의 표면을 도금하는 방법을 설명하기 위한 예시도이고, 도 11은 본 발명에 따른 발광다이오드 패키지 제조 방법 중 베이스부와 단자부 사이 및 반사부와 단자부 사이를 절연시키는 방법을 설명하기 위한 예시도이고, 도 12는 본 발명에 따른 발광다이오드 패키지 제조 방법에 따라 제조된 본 발명에 따른 발광다이오드 패키지에 발광다이오드 칩이 장착되어 있는 상태를 나타낸 예시도이며, 도 13 및 도 14는 본 발명에 따른 발광다이오드 패키지 제조 방법에 따라 제조된 본 발명에 따른 발광다이오드 패키지를 형성하는 관통홀의 다양한 형태를 나타낸 예시도이다. FIG. 3 is an exemplary view sequentially showing a state in which a light emitting diode package is processed according to a light emitting diode package manufacturing method according to the present invention, and FIG. 4 shows a housing and a terminal portion of the light emitting diode package manufacturing method according to the present invention. 5 is an exemplary view for explaining a method, Figure 5 is an exemplary view for explaining a method for forming a through hole in the light emitting diode package manufacturing method according to the invention, Figure 6 is an insulator in the light emitting diode package manufacturing method according to the present invention 7 is an exemplary view for explaining a method of forming an insertion surface, Figure 7 is an exemplary view for explaining a method of bending one end of the housing of the light emitting diode package manufacturing method according to the present invention, Figure 8 is a light emission according to the present invention Exemplary diagram for explaining a state of bending the housing of the diode package manufacturing method, Figure 9 is a present invention FIG. 10 is an exemplary view illustrating a method of bending a housing and stacking a reflective part on an upper surface of a base part of the method of manufacturing a light emitting diode package according to the present invention, and FIG. 10 illustrates surfaces of a base part and a reflective part of a method of manufacturing a light emitting diode package according to the present invention. FIG. 11 is an exemplary view for explaining a plating method, and FIG. 11 is an exemplary view for explaining a method of insulating between a base part and a terminal part and between a reflecting part and a terminal part in the method of manufacturing a light emitting diode package according to the present invention. FIG. 13 is a view illustrating a state in which a light emitting diode chip is mounted on a light emitting diode package according to the present invention manufactured according to the method of manufacturing a light emitting diode package according to the present invention. FIGS. 13 and 14 illustrate a method of manufacturing a light emitting diode package according to the present invention. A variety of through-holes forming the light emitting diode package according to the present invention manufactured according to An exemplary view showing the shape.
본 발명에 따른 발광다이오드 패키지 제조 방법은, 금속판재(900)를 스트립하여, 제1지지부(130)에 의해 상기 금속판재(900)에 연결되어 있는 하우징(910)과, 상기 하우징(910)에 이격된 상태에서 제2지지부(140)에 의해 상기 금속판재(900)에 연결되어 있는 단자부(300)를 형성하는 단계(S702 내지 S708), 상기 하우징(910)의 측단을 절곡하여, 하부에는 발광다이오드 칩이 실장되는 베이스부(100)를 형성하고, 상기 베이스부(100)의 상부에는 관통홀(210)이 형성되어 있는 반사부(200)를 적층하는 단계(S710, S712) 및 상기 베이스(100)와, 상기 반사부(200)와 상기 단자부(300)를 절연체(400)로 몰딩하여, 상기 베이스(100)와, 상기 반사부(200)와, 상기 단자부(300)를 일체로 형성하는 단계를 포함한다. In the method of manufacturing a light emitting diode package according to the present invention, the metal plate 900 is stripped and connected to the metal plate 900 by the first support part 130 to the housing 910 and the housing 910. Forming a terminal part 300 connected to the metal plate 900 by the second support part 140 in a spaced apart state (S702 to S708), and bending the side ends of the housing 910 to emit light at the bottom; Forming a base part 100 on which a diode chip is mounted, and stacking the reflective part 200 having the through-hole 210 formed on the base part 100 (S710, S712) and the base ( 100 and the reflector 200 and the terminal 300 are molded by an insulator 400 to integrally form the base 100, the reflector 200, and the terminal 300. Steps.
여기서, 도 3은 본 발명에 따른 발광다이오드 패키지 제조 방법에 따라 발광다이오드 패키지가 가공되는 상태가 순차적으로 표시되어 있는 예시도로서, 본 발명에 따른 발광다이오드 패키지는, 도 3에 도시된 바와 같은 금속판재(900)의 가공에 의해 형성될 수 있다. 상기 금속판재(900)는 상기한 바와 같은 다양한 금속으로 형성될 수 있다.3 is an exemplary view sequentially showing a state in which a light emitting diode package is processed according to the light emitting diode package manufacturing method according to the present invention, wherein the light emitting diode package according to the present invention is a metal as shown in FIG. It may be formed by the processing of the plate member 900. The metal plate 900 may be formed of various metals as described above.
우선, 상기 금속판재(900)를 스트립하여, 제1지지부(130)에 의해 상기 금속판재(900)에 연결되어 있는 하우징(910)과, 상기 하우징(910)에 이격된 상태에서 제2지지부(140)에 의해 상기 금속판재(900)에 연결되어 있는 단자부(300)를 형성하는 단계(S702 내지 S708)는, 다음과 같은 세부 단계들을 포함할 수 있다.First, the metal sheet 900 is stripped, and the housing 910 is connected to the metal sheet 900 by the first support 130, and the second support portion is spaced apart from the housing 910. Forming the terminal unit 300 connected to the metal plate 900 by the step (S702 to S708) may include the following detailed steps.
첫째, 도 4에 도시된 바와 같이, 상기 금속판재(900)에 하우징(910) 및 단자부(300)를 형성하는 단계(S702)에서는, 상기 금속판재(900)를 스트립하는 것에 의해, 하우징(910) 및 단자부(300)가 형성된다. 이 경우, 상기 하우징(910)은 제1지지부(130)에 의해 상기 금속판재(900)에 연결되어 있으며, 상기 단자부(300)는 제2지지부(140)에 의해 상기 금속판재(900)에 연결되어 있다. First, as shown in FIG. 4, in the step S702 of forming the housing 910 and the terminal portion 300 in the metal plate 900, the housing 910 is formed by stripping the metal plate 900. ) And the terminal portion 300 is formed. In this case, the housing 910 is connected to the metal plate 900 by the first support 130, and the terminal portion 300 is connected to the metal plate 900 by the second support 140. It is.
즉, 상기 하우징(910)과 상기 단자부(300)를 스트립하는 경우에, 상기 하우징(910)과 상기 단자부(300)는 상기 금속판재(900)에서 완전히 떨어지지 않고 일부분이 지지되는 형태로 스트립될 수 있다. That is, when the housing 910 and the terminal portion 300 are stripped, the housing 910 and the terminal portion 300 may be stripped in a form in which a part of the housing 910 and the terminal portion 300 are not completely separated from the metal plate 900. have.
이 경우, 스트립방법으로는, 프레스 금형을 이용하여 스탬핑하는 판금가공이나, 또는, 절삭 가공이 적용될 수 있다. In this case, as the strip method, sheet metal processing stamping using a press die, or cutting processing may be applied.
한편, 상기 스트립 공정에 의해, 상기 하우징(910)과 상기 단자부(300)는 완전히 분리된 상태로 상기 금속판재(900)에 형성된다.On the other hand, by the strip process, the housing 910 and the terminal portion 300 is formed in the metal plate 900 in a completely separated state.
둘째, 도 5에 도시된 바와 같이, 상기 하우징(910)에 관통홀(210)을 형성하는 단계(S704)에서는, 상기 하우징(910) 중 상기 제1지지부(130)에 연결되어 있지 않은 일측부에 상기 관통홀(210)이 형성된다.Second, as shown in FIG. 5, in the forming of the through hole 210 in the housing 910 (S704), one side of the housing 910 that is not connected to the first support part 130. The through hole 210 is formed in the.
상기 관통홀(210)의 내경은, 상기에서 설명된 바와 같이, 상기 반사부(200)와 상기 베이스부(100)가 맞닿는 접촉면으로부터 멀어지는 방향으로 갈수록, 커지도록 형성될 수 있다. As described above, the inner diameter of the through hole 210 may be formed to increase in the direction away from the contact surface where the reflector 200 and the base portion 100 abut.
또한, 상기 관통홀(210)은 도 1 내지 도 12에 도시된 바와 같이, 사각형 형태로 형성될 수도 있으나, 도 13에 도시된 바와 같이 원형으로 형성될 수 있고, 도 14에 도시된 바와 같이 육각형 형태로 형성될 수도 있으며, 이 외에도 다양한 형태로 형성될 수 있다. In addition, the through hole 210 may be formed in a quadrangular shape, as shown in FIGS. 1 to 12, but may be formed in a circular shape as shown in FIG. 13, and a hexagon as shown in FIG. 14. It may be formed in the form, in addition to it may be formed in various forms.
셋째, 도 6에 도시된 바와 같이, 상기 관통홀을 형성하는 면들 중 어느 하나를 가공하여 절연체삽입면(230)을 형성하는 단계(S706)에서는, 상기 관통홀을 감싸고 있는 테두리들 중, 상기 하우징(900)의 측단을 절곡하는 단계에서 상기 단자부와 마주하게 되는 절연체삽입면(230)이 상기 단자부(300)와 접촉되지 않도록, 상기 절연체삽입면(230)의 두께를 감소시키는 공정이 수행된다. 상기 공정은, 절삭방법 또는 프레스방법 등에 의해 수행될 수 있다. Third, as illustrated in FIG. 6, in the forming of the insulator insertion surface 230 by processing any one of the surfaces forming the through hole, the housing may include the housing, among the edges surrounding the through hole. The step of reducing the thickness of the insulator insertion surface 230 is performed such that the insulator insertion surface 230 facing the terminal portion does not contact the terminal portion 300 in the step of bending the side end of the 900. The process may be performed by a cutting method or a pressing method.
넷째, 도 7에 도시된 바와 같이, 상기 하우징(910)의 일측 끝단(240)을 굽히는 단계(S708)에서는, 상기 하우징(910)의 절곡에 의해 형성되는 상기 반사부(200)와 상기 베이스부(100)의 밀착성을 높이기 위해, 상기 하우징(910)의 일측 끝단(240)을 굽히는 공정이 수행된다. 즉, 상기 일측 끝단(240)은 상기 절곡 단계를 통해 형성되는 상기 반사부(200)의 끝단으로서, 상기 일측 끝단(240)은 상기 베이스부(100)와 접하게 된다. Fourth, as shown in FIG 7, in the step (S708) of bending the one end 240 of the housing 910, the housing 910, the reflecting portion 200 and the base portion formed by the bending of the In order to increase the adhesion of the 100, a process of bending one end 240 of the housing 910 is performed. That is, the one end 240 is an end of the reflecting unit 200 formed through the bending step, the one end 240 is in contact with the base portion 100.
다음, 상기 하우징(900)의 측단을 절곡하여, 하부에는 발광다이오드 칩이 실장되는 베이스부(100)를 형성하고, 상기 베이스부(100)의 상부에는 관통홀(210)이 형성되어 있는 반사부(200)를 적층하는 단계(S710, S712)는, 다음과 같은 세부 단계들을 포함할 수 있다.Next, the side end of the housing 900 is bent to form a base part 100 on which a light emitting diode chip is mounted, and a reflecting part in which a through hole 210 is formed on the base part 100. Steps S710 and S712 of stacking 200 may include the following detailed steps.
첫째, 도 8에 도시된 바와 같이, 상기 하우징(910) 중 상기 제1지지부(130)에 연결되어 있지 않은 일측을 절곡시키는 공정이 수행된다. 상기 절곡 공정에는, 스탬핑공정 또는 밴딩공정 등이 적용될 수 있다.First, as shown in FIG. 8, a process of bending one side of the housing 910 that is not connected to the first support 130 is performed. In the bending process, a stamping process or a bending process may be applied.
둘째, 도 9에 도시된 바와 같이, 상기 하우징(910) 중 상기 공정을 통해 절곡된 상기 반사부(200)를 상기 베이스부(100)의 상단면에 밀착시키는 공정이 수행된다.Second, as shown in FIG. 9, a process of bringing the reflective part 200 bent through the process of the housing 910 into close contact with the top surface of the base part 100 is performed.
상기한 바와 같은 절곡 공정은 프레기 방법에 의해 수행될 수 있다.The bending process as described above may be carried out by the airing method.
마지막으로, 상기 베이스(100)와, 상기 반사부(200)와 상기 단자부(300)를 절연체(400)로 몰딩하여, 상기 베이스(100)와, 상기 반사부(200)와, 상기 단자부(300)를 일체로 형성하는 단계는, 다음과 같은 세부 단계들을 포함할 수 있다.Finally, the base 100, the reflecting unit 200, and the terminal unit 300 are molded by an insulator 400 to form the base 100, the reflecting unit 200, and the terminal unit 300. ) May be integrally formed as follows.
첫째, 도 10에 도시된 바와 같이, 상기 반사부(200)가 절곡되어 상기 베이스(100)의 상단면에 적층된 상태에서, 상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)의 표면에 도금층(500)을 형성하는 공정이 수행될 수 있다. First, as shown in FIG. 10, in the state where the reflector 200 is bent and stacked on the top surface of the base 100, the base unit 100, the reflector 200, and the terminal unit ( A process of forming the plating layer 500 on the surface of 300 may be performed.
상기 도금층(500)은, 상기한 바와 같이, 알루미늄, 금 또는 은 등과 같은 금속을 이용하여 형성될 수 있으며, 전해도금, 스퍼터링 증착, 진공증착 및 스프레이증착 중 적어도 어느 하나의 방법을 이용하여 형성될 수 있다. 이러한 도금층(500) 형성 과정은, 상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)의 표면에 광의 반사율이 좋은 도금층(500)을 형성함으로써, 광의 방출성능을 극대화시키기 위한 목적으로 수행된다. 종래에는, 플라스틱 하우징이 사용되므로, 본 발명과 같이 반사율이 좋은 금속면이 형성될 수 없다. As described above, the plating layer 500 may be formed using a metal such as aluminum, gold, or silver, and may be formed using at least one of electroplating, sputter deposition, vacuum deposition, and spray deposition. Can be. The plating layer 500 may be formed by forming a plating layer 500 having a high reflectance of light on the surfaces of the base part 100, the reflector 200, and the terminal part 300, thereby maximizing light emission performance. It is performed for the purpose. Conventionally, since a plastic housing is used, a metal surface with good reflectance cannot be formed as in the present invention.
둘째, 도 11에 도시된 바와 같이, 상기 베이스부(100)와 상기 단자부(300) 사이 및 상기 반사부(200)와 상기 단자부(300) 사이를 절연체로 절연 및 접합시키는 공정이 수행된다. Second, as shown in FIG. 11, a process of insulating and bonding between the base part 100 and the terminal part 300 and between the reflecting part 200 and the terminal part 300 with an insulator is performed.
상기 절연체(400)는, 상기 베이스부와 상기 단자부 사이(410), 상기 반사부(200)와 상기 단자부 사이(300) 및 기타 상기 베이스부와 상기 단자부와 상기 반사부의 외곽면(430)에 형성될 수 있다. The insulator 400 is formed between the base part and the terminal part 410, between the reflecting part 200 and the terminal part 300, and on the outer surface 430 of the base part and the terminal part and the reflecting part. Can be.
상기 절연체를 형성하는 몰딩단계, 상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)를 절연시키는 기능 이외에도, 상기 구성들을 일체로 형성하는 단계이다. 여기서, 몰딩방법은 전술하였으므로, 중복해서 설명하지 않기로 한다.In addition to the molding step of forming the insulator, the base part 100, the reflection part 200, and the terminal part 300, the components are integrally formed. Here, since the molding method has been described above, it will not be repeated.
상기한 바와 같은 본 발명에 따른 발광다이오드 패키지 제조 방법은, 절연체(400)를 제외한 모든 구성들이 금속으로 형성되어 있기 때문에, 방열성능이 극대화될 수 있다. In the method of manufacturing a light emitting diode package according to the present invention as described above, since all components except the insulator 400 are formed of metal, heat dissipation performance may be maximized.
또한, 종래에는 방열 성능을 극대화시키기 위하여 별도의 금속을 적층하거나 라믹 하우징을 형성하였으나, 본 발명에 따른 발광다이오드 패키지 제조 방법에서는, 고순도의 금속을 절곡하는 방법이 이용되므로, 고방열을 요구하는 발광다이오드의 제조시 제조비용이 획기적으로 절감될 수 있다. In addition, conventionally, in order to maximize heat dissipation performance, a separate metal is laminated or a lamic housing is formed. However, in the method of manufacturing a light emitting diode package according to the present invention, since a method of bending a metal of high purity is used, light emission requiring high heat radiation is required. In manufacturing the diode, the manufacturing cost can be significantly reduced.
또한, 본 발명에 따른 발광다이오드 패키지 제조 방법에서는, 하우징(910)의 일측단을 형성하는 상기 반사부(200)가 절곡되어, 상기 베이스부(100)의 상단면에 적층하는 형태로 구현되므로, 종래의 경우보다 프레스 공정이 줄어들게 되어, 제조비용이 절감될 수 있다.In addition, in the method of manufacturing a light emitting diode package according to the present invention, since the reflector 200 forming one side end of the housing 910 is bent and stacked on the top surface of the base part 100, Since the pressing process is reduced than in the conventional case, the manufacturing cost can be reduced.
한편, 도 12는 상기한 바와 같은 발광다이오드 패키지 제조 방법에 의해 제조된 본 발명에 따른 발광다이오드 패키지에, 발광다이오드 칩(800)이 장착되어 있는 상태를 나타내고 있다.12 illustrates a state in which the LED chip 800 is mounted in the LED package according to the present invention manufactured by the LED package manufacturing method as described above.
상기한 바와 같이, 상기 발광다이오드 칩(800)의 제1전극은 상기 베이스부(100)에 제1와이어(810)를 통해 연결될 수 있고, 제2전극은 상기 단자부(300)에 제2와이어(820)를 통해 연결될 수 있으며, 상기 베이스부(100)와 상기 단자부(300)는 외부의 전원공급단자와 연결되어 상기 제1전극 및 제2전극으로 전원을 공급하는 기능을 수행한다. As described above, the first electrode of the LED chip 800 may be connected to the base part 100 through a first wire 810, and the second electrode may be connected to the terminal part 300 by a second wire ( The base unit 100 and the terminal unit 300 may be connected to an external power supply terminal to supply power to the first electrode and the second electrode.
도 15는 본 발명에 따른 발광다이오드 패키지의 또 다른 일실시예를 나타낸 다양한 사시도이다. 이 중, (a)와 (b)는 또 다른 형태의 발광다이오드 패키지를 나타낸 것으로서, (a)는 절연체가 형성되기 전의 상태를 나타낸 것이며, (b)는 절연체가 형성되어 있는 상태를 나타낸 것이다. 또한, (c) 및 (d) 역시 또 다른 형태의 발광다이오드 패키지를 나타낸 것으로서, (c)는 절연체가 형성되기 전의 상태를 나타낸 것이며, (d)는 절연체가 형성되어 있는 상태를 나타낸 것이다.15 is a perspective view showing another embodiment of a light emitting diode package according to the present invention. Among these, (a) and (b) show another type of light emitting diode package, (a) shows a state before the insulator is formed, and (b) shows a state where the insulator is formed. In addition, (c) and (d) also shows another type of light emitting diode package, (c) shows a state before the insulator is formed, (d) shows a state in which the insulator is formed.
한편, 도 15에 도시된 본 발명에 따른 발광다이오드 패키지의 구성은, 상기에서 설명된 본 발명에 다른 발광다이오드 패키지의 구성과 대부분 일치하며, 상기에서 설명된 발광다이오드 패키지 제조 방법에 의해 제조될 수 있다. 따라서, 이하에서는, 상기에서 설명된 발광다이오드 패키지 및 그 제조 방법과 다른 구성 및 방법에 대하여만 설명된다. On the other hand, the configuration of the light emitting diode package according to the present invention shown in Figure 15, the configuration of the other light emitting diode package in accordance with the present invention described above is almost the same, can be manufactured by the light emitting diode package manufacturing method described above have. Therefore, hereinafter, only the light emitting diode package described above and a method and a structure other than the manufacturing method thereof will be described.
첫째, 도 1 내지 도 14를 참조하여 설명된 발광다이오드 패키지에서는, 베이스외부단자(120)가, 상기 발광다이오드 칩(800)이 실장되는 실장부(110)를 기준으로, 단자부외부단자(130)와 수직한 방향에 형성되어 있으나, 도 15에 도시된 발광다이오드 패키지는, 베이스부외부단자(120)가, 단자부외부단자(130)와 마주보고 있는 형태로 형성되어 있다. First, in the light emitting diode package described with reference to FIGS. 1 to 14, the base external terminal 120 is based on the mounting unit 110 on which the light emitting diode chip 800 is mounted. Although formed in a direction perpendicular to the direction, the light emitting diode package illustrated in FIG. 15 is formed such that the base outer terminal 120 faces the terminal outer terminal 130.
따라서, 상기 베이스부외부단자(120)는, 금속판재(900) 상에서 상기 제2지지부(140)와 마주보고 있는 제1지지부(130)에 연결되어 있다. Accordingly, the base portion outer terminal 120 is connected to the first support portion 130 facing the second support portion 140 on the metal plate 900.
또한, 도 15의 (a) 및 (b)에 도시된 발광다이오드 패키지에 적용되는 베이스외부단자(120) 및 단자부외부단자(310)의 형태는, 상기에서 설명된 형태와 다르게 박스 형태로 형성되어 있다. 본 발명에 적용되는 베이스외부단자(120) 및 단자부외부단자(310)는, 도 1 및 도 15의 (a) 및 (b)에 도시된 형태 이외에도 다양한 형태로 구성될 수 있다. In addition, the shape of the base outer terminal 120 and the terminal outer terminal 310 to be applied to the light emitting diode package shown in (a) and (b) of FIG. have. The base outer terminal 120 and the terminal outer terminal 310 applied to the present invention may be configured in various forms in addition to those shown in FIGS. 1 and 15 (a) and (b).
한편, 도 15에 도시된 발광다이오드 패키지에서는, 상기 베이스부외부단자(120) 및 상기 제1지지부(130)가, 상기 단자부외부단자(310) 및 상기 제2지지부(140)와 마주보고 있는 형태로 형성되어 있기 때문에, 상기 반사부(200)가 도 8과 같은 형태로 절곡될 수 없다.Meanwhile, in the light emitting diode package illustrated in FIG. 15, the base outer terminal 120 and the first support part 130 face the terminal outer terminal 310 and the second support part 140. Since the reflector 200 is not formed as shown in FIG. 8, the reflector 200 may not be bent.
그 대신, 도 15에 도시된 발광다이오드 패키지에서는, 상기 반사부(200)가, 상기 베이스부외부단자(120) 및 상기 단자부외부단자(310)가 이루는 직선의 수직한 방향으로 절곡된다. Instead, in the light emitting diode package illustrated in FIG. 15, the reflector 200 is bent in a vertical direction of a straight line formed by the base outer terminal 120 and the terminal outer terminal 310.
상기한 바와 같은 본 발명을 정리하면 다음과 같다. The present invention as described above is summarized as follows.
본 발명에 따른 발광다이오드 패키지는, 종래의 PLCC(Plastic Leaded Chip Carrier) 패키지의 문제점을 해결하기 위한 것으로서, 고효율, 고강성의 메탈 하우징(베이스부 및 반사부)이 플라스틱(plastic)으로 절연되어 있는 구성으로 형성되어 있다. The light emitting diode package according to the present invention is to solve the problems of the conventional plastic leaded chip carrier (PLCC) package, in which a high-efficiency, high-rigidity metal housing (base portion and reflecting portion) is insulated by plastic. It is formed in a configuration.
본 발명에 따른 발광다이오드 제조 방법은, Cu 또는 Al 등의 금속판재와 스탬핑(stamping) 벤딩 접합 공정을 이용하는 것으로서, 고온 신뢰성이 우수한, 즉, 방열 특성이 우수한 고 신뢰성 패키지를 제조 제조하는 방법에 관한 것이다.The light emitting diode manufacturing method according to the present invention uses a metal plate material such as Cu or Al and a stamping bending bonding process, and relates to a method for manufacturing and manufacturing a high reliability package having excellent high temperature reliability, that is, excellent heat dissipation characteristics. will be.
즉, 본 발명은 금속소재를, 스탬핑(Stamping) 성형법을 이용해 성형하여, 발광다이오드 칩이 실장되는 베이스부(100)와, 반사판의 기능을 수행하는 반사부(200)를 일체로 제조할 수 있다. 예를 들어, 베이부와 반사부가 형성될 하우징(910)을 연장하여 반사부(Reflector)(200)를 성형한 후, 반사부(200)를 굽혀 베이스부(100)와 접합시켜, 베이스부 상단면에, 플라스틱 반사판(Plastic Reflector) 대신 금속으로 형성된 반사부(200)가 형성된다.That is, according to the present invention, the metal material may be molded by using a stamping molding method to integrally manufacture the base part 100 on which the light emitting diode chip is mounted and the reflecting part 200 which functions as a reflector. . For example, after forming the reflector 200 by extending the housing 910 in which the bay part and the reflector are to be formed, the reflector 200 is bent to be joined to the base part 100, and the upper end of the base part is formed. On the surface, instead of a plastic reflector, a reflector 200 formed of metal is formed.
본 발명에서는, 금속으로 형성된 상기 반사부(200)와 상기 베이스부(100)가 일체로 되어있기 때문에, 금속 방열부의 단면적이 최대화될 수 있고, 상기 반사부(200)는 열에 취약한 플라스틱 대신 금속으로 보강되어 있기 때문에, 열에 의한 변형 문제가 해결될 수 있다. In the present invention, since the reflective part 200 formed of the metal and the base part 100 are integrated, the cross-sectional area of the metal heat dissipation part can be maximized, and the reflective part 200 is made of metal instead of plastic, which is susceptible to heat. Since it is reinforced, the problem of deformation by heat can be solved.
즉, 본 발명에 의하면, 제조 비용이 획기적으로 감소될 수 있으며, 고순도 재료의 사용이 가능함으로써, 열 방출 효과가 극대화될 수 있다.That is, according to the present invention, the manufacturing cost can be significantly reduced, and by using a high purity material, the heat dissipation effect can be maximized.
본 발명의 특징을 정리하면, 다음과 같이 크게 세 가지로 구분될 수 있다.To summarize the features of the present invention, it can be divided into three as follows.
첫째, 본 발명에서는, 유기발광다이오드 패키지의 사면을 메탈이 둘러싸고 있기 때문에, 발광다이오드 칩이 장착되어 사용되는 경우, 온도 증가에 따른 컵 형상의 변형이 근본적으로 방지될 수 있다(종래의 발광다이오드 패키지는 플라스틱으로 되어 있어 온도 증가 시 변형이 일어남). 또한, 본 발명에 따른 유기발광다이오드 패키지는, 동일 두께의 금속판재(900)를 이용하여 제작되기 때문에, 열전도성이 좋은 메탈의 면적을 극대화하여 열방출 특성이 향상될 수 있다. First, in the present invention, since the metal surrounds the slope of the organic light emitting diode package, when the light emitting diode chip is mounted and used, deformation of the cup shape due to an increase in temperature can be fundamentally prevented (conventional light emitting diode package). Is plastic and will deform with increasing temperature). In addition, since the organic light emitting diode package according to the present invention is manufactured using the metal plate material 900 having the same thickness, heat dissipation characteristics may be improved by maximizing the area of the metal having good thermal conductivity.
둘째, 본 발명에 따른 유기발광다이오드 패키지에서, 상기 베이스부(100)와 상기 반사부(200)가 일체로 형성되어 있다. 즉, 상기 반사부(200)와 상기 베이스부(100)가 일체로 연결되어 있으며, 그 사이를 절곡시킴으로써, 상기 반사부(200)가 분리 없이 일체로 상기 베이스부(100)의 상단면에 적층될 수 있다. Second, in the organic light emitting diode package according to the present invention, the base part 100 and the reflecting part 200 are integrally formed. That is, the reflecting unit 200 and the base unit 100 are integrally connected and bent therebetween, so that the reflecting unit 200 is integrally laminated on the top surface of the base unit 100 without separation. Can be.
또한, 상기 반사부(200)의 깊이, 즉, 두께는, 발광다이오드 칩의 형태에 따라 조절이 가능하다. 즉, 상기 반사부(200)와 상기 베이스부(100)는 일체로 형성되어 있으나, 상기 반사부(200) 만을 프레스 가공 또는 절삭 가공 등을 통해 가공함으로써, 상기 반사부(200)의 두께는 상기 베이스부(100)의 두께가 다르게 형성될 수도 있다. In addition, the depth, that is, the thickness of the reflector 200 may be adjusted according to the shape of the light emitting diode chip. That is, the reflective part 200 and the base part 100 are integrally formed, but only the reflective part 200 is processed by pressing or cutting, such that the thickness of the reflective part 200 is The base portion 100 may have a different thickness.
또한, 상기 베이스부와 상기 반사부는, 동일한 금속 재료로 연결되어 일체를 이루고 있으며, 1번 이상 절곡되어 접합될 수 있다. In addition, the base portion and the reflecting portion are connected by the same metal material to form a single body, and may be bent and joined one or more times.
또한, 상기 반사부(200)에 형성되는 관통홀(210)의 형상은, 삼각형, 사각형, 오각형, 육각형, 팔각형, 12각형 등의 다각형, 또는 원형 또는 타원형 등으로 형성될 수 있다. In addition, the shape of the through hole 210 formed in the reflector 200 may be formed in a polygon, such as a triangle, a quadrangle, a pentagon, a hexagon, an octagon, a decagon, or a circle or an ellipse.
또한, 상기 베이스부(100)와 상기 단자부(300)는 절연체(400)에 의해 분리되어 있다. In addition, the base part 100 and the terminal part 300 are separated by an insulator 400.
또한, PCB에 납땜을 하기 위하여, 상기 단자부(300)는, 상기 관통홀 내부에서 상기 베이스부(100)와 이격되게 형성될 수도 있으며, 또는 상기 관통홀 외부로 연장되어 형성된 단자부외부단자(310)를 포함할 수도 있다. In addition, in order to solder the PCB, the terminal part 300 may be formed to be spaced apart from the base part 100 in the through hole, or the terminal part outer terminal 310 formed to extend outside the through hole. It may also include.
또한, 상기 베이스부(100)의 크기는 실장되는 발광다이오드 칩(800)의 수에 따라 변경될 수 있기 때문에, Single Chip 부터 Multi Chip 까지 모든 형태의 발광다이오드 칩의 적용이 가능하다. In addition, since the size of the base unit 100 may be changed according to the number of light emitting diode chips 800 to be mounted, all types of light emitting diode chips from Single Chip to Multi Chip may be applied.
또한, 상기 반사부(200)와 상기 단자부(300) 사이 및, 상기 베이스부(100)와 상기 단자부(300) 사이에는 상기 절연체(400)가 삽입될 수 있는 공간이 형성되어 있다. In addition, a space in which the insulator 400 may be inserted is formed between the reflective part 200 and the terminal part 300 and between the base part 100 and the terminal part 300.
셋째, 본 발명에 따른 유기발광다이오드 제조 방법은, 프레스 금형을 이용하여 금속판재(900)에서 상기 베이스부(100)와 상기 반사부(200)를 연결하여 동시에 형성한 후, 상기 반사부(200)를 구부려 상기 베이스부(100)의 상단면에 적층하고 있으며, 상기 단자부(300) 역시, 상기 금속판재(900)에서 상기 베이스부(100) 및 상기 반사부(200)와 함께 형성할 수 있다. Third, in the method of manufacturing an organic light emitting diode according to the present invention, the base part 100 and the reflecting part 200 are simultaneously formed in a metal plate material 900 using a press die, and then the reflecting part 200 is formed. ) Is bent and stacked on the top surface of the base part 100, and the terminal part 300 may also be formed together with the base part 100 and the reflecting part 200 in the metal plate 900. .
또한, 금형을 이용하여, 상기 반사부의 접합과 구부리는 형태 및, 상기 반사부의 경사면의 각도는 자유롭게 조정될 수 있다. In addition, by using a mold, the shape of the bonding and bending of the reflector, and the angle of the inclined surface of the reflector can be freely adjusted.
또한, 상기 금속판재(900)의 재료로는, 기계적 성질이 우수하고 열전도율이 우수한 Cu, Al, Mg 또는 그들의 화합물 및 모든 금속제들이 적용될 수 있다.In addition, as the material of the metal plate 900, Cu, Al, Mg or their compounds and all metals having excellent mechanical properties and excellent thermal conductivity may be applied.
또한, 상기 베이스부(100), 상기 반사부(200) 및 상기 단자부(300)의 표면에는 Al, Ag, Au 등을 소정 두께 도금하여 빛 방출효과를 증대시킬 수 있으며, 도금방법으로는 전해도금, 스퍼터링, 진공증착, 스프레이법 등이 적용될 수 있다. In addition, the surface of the base portion 100, the reflecting portion 200 and the terminal portion 300 may be plated with Al, Ag, Au, etc. to a predetermined thickness to increase the light emission effect, the electroplating method as a plating method , Sputtering, vacuum deposition, spraying, etc. may be applied.
또한, 상기 절연체(400)로는 LCP, PCT, PA 등의 열가소성 모든 수지와, 실리콘, 에폭시 등의 모든 열경화성 수지, 또는 Glass frit 등의 이용될 수 있으며, 상기 절연체(400)는 insert 몰딩 방식으로 코팅하는 방법. 상기 절연물을 dispensing하는 방법 등을 통해 상기 베이스부(100)와 상기 단자부(300) 사이 및, 상기 반사부(200)와 상기 단자부(300) 등에 주입될 수 있다. In addition, as the insulator 400, all thermoplastic resins such as LCP, PCT, and PA, and all thermosetting resins such as silicon and epoxy, or glass frit may be used. The insulator 400 may be coated by insert molding. How to. It may be injected between the base portion 100 and the terminal portion 300, the reflecting portion 200, the terminal portion 300, or the like through a method of dispensing the insulator.
이와 같이 설명된 본 발명은 예시적인 것에 불과하다. 그러므로, 본발명은 상기의 상세한 설명에서 언급되는 형태로만 한정되는 것은 아님을 잘 이해할 수 있을 것이다. 따라서, 본 발명의 기술적 보호 범위는 첨부된 청구범위의 기술적 사상에 의해 정해져야 할 것이다. 즉, 본 발명의 기술적 보호 범위는 상기한실시예에 기술된 구성요소들의 변형물과 균등물 및 대체물을 포함하는 것으로 해석되어야 한다.The invention thus described is merely illustrative. Therefore, it will be understood that the present invention is not limited to the forms mentioned in the detailed description above. Therefore, the technical protection scope of the present invention will be defined by the technical spirit of the appended claims. That is, the technical protection scope of the present invention should be construed to include modifications, equivalents, and substitutes for the components described in the above embodiments.

Claims (10)

  1. 발광다이오드 칩이 실장되는 실장부가 형성되어 있는 금속재질의 베이스부;A base portion of a metal material having a mounting portion on which a light emitting diode chip is mounted;
    중심부분에는 관통홀이 형성되어 있으며, 일측끝단이 상기 베이스부의 일측끝단과 연결된 상태로 절곡되어, 상기 베이스부의 상단면에 적층되는 금속재질의 반사부;A through hole is formed in the central portion, and one side end is bent in a state connected to one end of the base portion, and a metal reflective portion stacked on the top surface of the base portion;
    상기 베이스부와 나란하게 배치되어 있으며, 상기 베이스부 및 상기 반사부와 일정간격으로 이격되어 있는 단자부; 및A terminal part disposed to be parallel to the base part and spaced apart from the base part and the reflecting part at a predetermined interval; And
    상기 베이스부와 상기 단자부 사이, 및 상기 반사부와 상기 단자부 사이에 삽입되어, 상기 베이스부, 상기 반사부와 상기 단자부를 절연 및 고정시키는 절연체를 포함하는 발광다이오드 패키지.And an insulator inserted between the base part and the terminal part and between the reflecting part and the terminal part to insulate and fix the base part, the reflecting part and the terminal part.
  2. 제 1 항에 있어서,The method of claim 1,
    상기 베이스부는 상기 발광다이오드 칩의 제1전극과 연결되며,The base portion is connected to the first electrode of the light emitting diode chip,
    상기 단자부는 상기 발광다이오드 칩의 제2전극과 연결되는 것을 특징으로 하는 발광다이오드 패키지.The terminal unit is connected to the second electrode of the LED chip.
  3. 제 1 항에 있어서,The method of claim 1,
    상기 베이스부의 표면과 상기 반사부의 표면에는 도금층이 형성되어 있는 것을 특징으로 하는 발광다이오드 패키지. A light emitting diode package, characterized in that the plating layer is formed on the surface of the base portion and the surface of the reflecting portion.
  4. 제 1 항에 있어서,The method of claim 1,
    상기 반사부가 상기 베이스부의 상단면에 적층된 상태에서, 상기 관통홀은 상기 실장부를 둘러싸고 있는 것을 특징으로 하는 발광다이오드 패키지.The light emitting diode package according to claim 1, wherein the through hole surrounds the mounting unit in a state in which the reflecting unit is stacked on an upper surface of the base unit.
  5. 제 1 항에 있어서,The method of claim 1,
    상기 관통홀의 내경은, 상기 반사부와 상기 베이스부가 맞닿는 접촉면으로부터 멀어지는 방향으로 갈수록, 커지는 것을 특징으로 하는 발광다이오드 패키지. The inner diameter of the through hole is larger in the direction away from the contact surface where the reflecting portion and the base portion abut, the light emitting diode package.
  6. 금속판재를 스트립하여, 제1지지부에 의해 상기 금속판재에 연결되어 있는 하우징과, 상기 하우징에 이격된 상태에서 제2지지부에 의해 상기 금속판재에 연결되어 있는 단자부를 형성하는 단계;Stripping a metal plate to form a housing connected to the metal plate by a first support, and a terminal portion connected to the metal plate by a second support while spaced apart from the housing;
    상기 하우징의 일측을 절곡하여, 하부에는 발광다이오드 칩이 실장되는 베이스부를 형성하고, 상기 베이스부의 상부에는 관통홀이 형성되어 있는 반사부를 적층하는 단계; 및Bending one side of the housing to form a base part on which a light emitting diode chip is mounted, and stacking a reflector on which a through hole is formed on the base part; And
    상기 베이스와, 상기 반사부와 상기 단자부를 절연체로 몰딩하여, 상기 베이스와, 상기 반사부와, 상기 단자부를 일체로 형성하는 단계를 포함하는 발광다이오드 패키지 제조 방법. And molding the base, the reflecting portion and the terminal portion with an insulator to integrally form the base, the reflecting portion, and the terminal portion.
  7. 제 6 항에 있어서, The method of claim 6,
    상기 하우징과 상기 단자부를 형성하는 단계는,Forming the housing and the terminal portion,
    상기 하우징 중, 상기 제1지지부에 연결되어 있지 않은 일측에, 상기 관통홀이 형성되어 있는 상기 반사부를 형성하며, The reflective part in which the through hole is formed is formed on one side of the housing that is not connected to the first support part.
    상기 관통홀의 내경은, 상기 반사부와 상기 베이스부가 맞닿는 접촉면으로부터 멀어지는 방향으로 갈수록, 커지는 것을 특징으로 하는 발광다이오드 패키지 제조 방법. The inner diameter of the through hole is larger in the direction away from the contact surface where the reflecting portion and the base portion abut, the method of manufacturing a light emitting diode package.
  8. 제 7 항에 있어서, The method of claim 7, wherein
    상기 하우징과 상기 단자부를 형성하는 단계는,Forming the housing and the terminal portion,
    상기 관통홀을 감싸고 있는 테두리들 중, 상기 절곡단계에서 상기 단자부와 마주하게 되는 절연체삽입면이, 상기 단자부와 접촉되지 않도록, 절연체삽입면의 두께를 감소시키는 것을 특징으로 하는 발광다이오드 패키지 제조 방법.The method of manufacturing a light emitting diode package, characterized in that the thickness of the insulator insertion surface is reduced so that the insulator insertion surface facing the terminal portion in the bending step is not in contact with the terminal portion among the edges surrounding the through hole.
  9. 제 6 항에 있어서, The method of claim 6,
    상기 하우징을 절곡하는 단계 이후에, 상기 베이스부의 표면과 상기 반사부의 표면에 도금층을 형성하는 단계를 더 포함하는 발광다이오드 패키지 제조 방법.After bending the housing, further comprising forming a plating layer on the surface of the base portion and the surface of the reflecting portion.
  10. 제 6 항에 있어서, The method of claim 6,
    상기 절연체로 몰딩하는 단계는,Molding with the insulator,
    상기 절연체를, 상기 베이스부와 상기 단자부 사이 및, 상기 반사부와 상기 단자부 사이에 삽입시켜, 상기 베이스부, 상기 반사부와 상기 단자부를 절연 및 고정시키는 것을 특징으로 하는 발광다이오드 패키지 제조 방법.And insulating and fixing the insulator between the base part and the terminal part and between the reflecting part and the terminal part to insulate and fix the base part, the reflecting part and the terminal part.
PCT/KR2014/000766 2013-01-31 2014-01-28 Light emitting diode package and manufacturing method therefor WO2014119891A1 (en)

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JP2011035264A (en) * 2009-08-04 2011-02-17 Zeniya Sangyo Kk Package for light emitting element and method of manufacturing light emitting element

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KR20090124053A (en) * 2008-05-29 2009-12-03 삼성전기주식회사 Led package and method of manufacturing the same
JP2011035264A (en) * 2009-08-04 2011-02-17 Zeniya Sangyo Kk Package for light emitting element and method of manufacturing light emitting element

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