WO2014107040A1 - Fil de connexion en alliage d'argent - Google Patents

Fil de connexion en alliage d'argent Download PDF

Info

Publication number
WO2014107040A1
WO2014107040A1 PCT/KR2014/000038 KR2014000038W WO2014107040A1 WO 2014107040 A1 WO2014107040 A1 WO 2014107040A1 KR 2014000038 W KR2014000038 W KR 2014000038W WO 2014107040 A1 WO2014107040 A1 WO 2014107040A1
Authority
WO
WIPO (PCT)
Prior art keywords
bonding wire
silver alloy
grain size
bonding
average grain
Prior art date
Application number
PCT/KR2014/000038
Other languages
English (en)
Korean (ko)
Inventor
홍성재
허영일
김재선
이종철
문정탁
Original Assignee
엠케이전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엠케이전자 주식회사 filed Critical 엠케이전자 주식회사
Priority to CN201480011968.2A priority Critical patent/CN105122435A/zh
Publication of WO2014107040A1 publication Critical patent/WO2014107040A1/fr
Priority to PH12015501521A priority patent/PH12015501521A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/85464—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a silver alloy bonding wire, and more particularly, to a silver alloy bonding wire that is strong in thermal shock strength, has excellent SOB bonding properties, and exhibits excellent bonding characteristics in a nitrogen atmosphere.
  • bonding wires are still widely used to connect the substrate and the semiconductor device or to connect the semiconductor devices.
  • gold bonding wires have been used a lot, but they are expensive and there is a demand for bonding wires that can replace them since the price has risen recently.
  • the present invention has been made in an effort to provide a silver alloy bonding wire that is strong in thermal shock strength, has excellent SOB bonding properties, and exhibits excellent bonding characteristics even under a nitrogen atmosphere.
  • a silver alloy bonding wire is provided in which the ratio (a / b) of the average grain size (a) of the outer portion to the average grain size (b) of the center with respect to the vertical cross section in the longitudinal direction is 0.3 to 3.
  • the average grain size b of the center portion of the silver alloy bonding wire may be larger than the average grain size a of the outer portion. At this time, the average grain size (b) of the central portion may be about 2 ⁇ m or less.
  • a ratio (a / b) of the average grain size (a) of the outer portion to the average grain size (b) of the central portion may be about 0.3 to about 1.
  • the silver alloy bonding wire may further include a first physical property control element.
  • the first physical property control element may be at least one selected from the group consisting of beryllium (Be), calcium (Ca), lanthanum (La), yttrium (Y), and cerium (Ce).
  • the content of the first physical property control element may be about 30 ppm by weight to about 100 ppm by weight based on the total silver alloy bonding wire.
  • the silver alloy bonding wire may further include a second physical property control element.
  • the second physical property control element may be at least one selected from the group consisting of platinum (Pt) and copper (Cu).
  • the content of the second physical property control element may be about 0.01 wt% to about 3 wt% based on the total silver alloy bonding wire.
  • the silver alloy bonding wire may have a reduction ratio of about 7% to about 10% in a drawing process for manufacturing the same.
  • bonding wire of the present invention When the bonding wire of the present invention is used, bonding properties that are strong in thermal shock strength, excellent in SOB bonding, and excellent in a nitrogen atmosphere can be obtained.
  • FIG. 1 is a cross-sectional perspective view showing a silver alloy bonding wire according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a silver alloy bonding wire according to an embodiment of the present invention.
  • 3A is a side view illustrating a bonding state of a silver alloy bonding wire according to an embodiment of the present invention for explaining SOB bonding in more detail.
  • FIG. 3B is a plan view of the portion B of FIG. 3A viewed from above.
  • first and second may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another.
  • first component may be referred to as the second component, and vice versa, the second component may be referred to as the first component.
  • the concept of the present invention discloses a silver alloy bonding wire containing silver (Ag) as a main component and containing palladium (Pd) and gold (Au).
  • the main component means that the concentration of the corresponding element with respect to the total component exceeds 50%. That is, having silver (Ag) as the main component means that the concentration of silver in the total amount of silver and other elements exceeds 50%.
  • the concentration refers to the concentration based on the number of moles of atoms.
  • the content of palladium (Pd) may be about 0.5% to about 4% by weight. If the content of palladium (Pd) is too small, the acid resistance may deteriorate so that it may be easily corroded or short-circuited by nitric acid or sulfuric acid. In particular, if palladium is not contained, oxidation resistance of the silver alloy bonding wire may be weak. On the contrary, when the content of palladium is excessively high, the hardness of the ball formed at the end of the wire during wire bonding may excessively increase, thereby damaging the bonding pad and / or the substrate below.
  • the content of gold (Au) may be about 2% by weight to about 8% by weight. If the content of gold (Au) is too small, the shape of the ball formed at the end of the bonding wire is excessively deviated from the spherical ball ( ⁇ ⁇ ) may cause poor bonding properties. Conversely, if the content of gold is excessively high, the hardness of the balls formed at the wire ends during wire bonding may excessively increase, thereby damaging the bonding pad and / or the substrate thereunder, and also so-called stitch bonding on the bumps. SOB (stitch-on-bump) connectivity may be degraded.
  • SOB switch-on-bump
  • the bonding wire may be composed of a number of crystal grains.
  • the grain size may have a constant spread over the entire bonding wire.
  • the size of the crystal grains may vary depending on the position of the bonding wire in the radial direction.
  • the ratio of the average grain size (a) of the outer portion to the average grain size (b) of the center with respect to the vertical cross section with respect to the longitudinal direction of the silver alloy bonding wire ( a / b) may be about 0.3 to about 3.
  • a ratio (a / b) of the average grain size (a) of the outer portion to the average grain size (b) of the center portion may be about 0.5 to about 2.5.
  • FIG. 1 is a perspective view showing a silver alloy bonding wire 100 according to an embodiment of the present invention, a cross-sectional view so as to know the structure of the cross section perpendicular to the z-direction in the longitudinal direction.
  • the silver alloy bonding wire 100 is closer to the center O of the bonding wire 100 and farther from the center O of the bonding wire 100 based on the intermediate interface 105 as the interface. It may be configured as an outer portion 120.
  • the intermediate interface 105 may be virtual, and no physical interface may be observed between the central portion 110 and the outer portion 120.
  • the location of the intermediate interface 105 may be the center of the center O of the bonding wire 100 and the surface of the bonding wire 100. That is, if the cross section of the bonding wire 100 is regarded as a circle of radius R, the intermediate interface 105 may be a circle having a radius R / 2 as a concentric circle.
  • FIG. 2 is a schematic view showing an embodiment of a method of measuring the average grain size (a) of the outer portion and the average grain size (b) of the central portion.
  • the average grain size a of the outer portion may be measured along the outer circumferential direction of the bonding wire 100, denoted by a1.
  • the average grain size a of the outer portion can be measured using a method such as, for example, electron backscatter diffraction (EBSD).
  • EBSD electron backscatter diffraction
  • the average grain size (a) of the outer portion can be obtained by counting the number of grains crossing over a predetermined length in a direction perpendicular to the wire length direction in the grain image obtained through EBSD analysis, and dividing the predetermined length by the number of grains. have.
  • the grain boundary can be determined.
  • the grain boundary between the adjacent grains is 15 degrees or more.
  • the average grain size a can be determined in software using an EBSD system. If the average grain size (a) is determined in software using an EBSD system, for example, after calculating the area of the grains exposed on the side surface, the diameter of the circle having the same area is the grain size, and The average grain size determined as described above can be averaged to obtain an average grain size (a).
  • the average grain size (a) may be obtained by using an EBSD system but measuring the grain size in software for the outer range indicated by a2 and calculating its average value.
  • the average grain size b of the core may be an average of the grain sizes measured for any range or the entire center range within the core.
  • a method such as EBSD can be used. If EBSD is used to calculate the average grain size (b) in software, it can be obtained as described above.
  • the average grain size b of the said center part measured here is 2 micrometers or less.
  • the average grain size (a) of the outer portion and the average grain size (b) of the center portion can be obtained, and the average grain size (b) of the center portion is larger than the average grain size (a) of the outer portion.
  • the ratio (a / b) of the average grain size (a) of the outer side to the average grain size (b) of the center with respect to the vertical cross section in the longitudinal direction of the bonding wire may be less than about 1.
  • the ratio (a / b) of the average grain size (a) of the outer portion to the average grain size (b) of the central portion may be about 0.3 to about 1.
  • Bonding wires connecting the substrate and the semiconductor die, or the semiconductor die and another semiconductor die can often experience significant temperature variations, where the size of the grains and the dispersion of the grain sizes can be related to the stability of the thermal changes. In other words, if the grain size is small, the instability of the thermal change may be reduced compared to when the grain size is large.
  • the ratio (a / b) of the average grain size (a) of the outer side to the average grain size (b) of the center with respect to the vertical cross section with respect to the longitudinal direction of the bonding wire may be one index indicating the dispersion.
  • a first physical property control element may be further added.
  • the first physical property control element can prevent the grains inside the bonding wire from becoming excessively large.
  • the first physical property control element may be at least one selected from the group consisting of beryllium (Be), calcium (Ca), lanthanum (La), yttrium (Y), and cerium (Ce).
  • the content of the first physical property control element may include, for example, about 30 wtppm to about 100 wtppm of the total silver alloy bonding wire.
  • the effect of preventing coarsening of the grain size may be insignificant.
  • the content of the first physical property control element in the silver alloy bonding wire is too large, the hardness of the ball formed at the end of the bonding wire may be excessively high. Excessively high hardness of the balls may cause cracking or cratering of the pads or semiconductor dies and poor stitch-on-bump (SOB) bonding to the bumps.
  • SOB stitch-on-bump
  • FIG. 3A is a side view for explaining SOB bonding in more detail
  • FIG. 3B is a plan view of the B portion of FIG. 3A viewed from above.
  • a first side bonding pad 10 and a second side bonding pad 20 to be electrically connected are provided, and a bump 30 is provided on the second side bonding pad 20. do.
  • the bumps 30 may be ball bumps or stud bumps, which will be described in the case of stud bumps.
  • Bumps 30 are provided on the second side bonding pads 20 of the provided bonding pads 10, 20, and a method of providing such bumps 30 is well known to those skilled in the art, and thus a detailed description thereof will be omitted. do.
  • the silver alloy bonding wire 100 After ball bonding to the first side bonding pad 10 which forms the ball at the tip of the silver alloy bonding wire 100, the silver alloy bonding wire 100 is directed toward the bump 30 on the second side bonding pad 20. It guides and performs stitch bonding on bumps 30.
  • the shape and size of the left and right are substantially symmetric about the center line C in the stitch bonded form.
  • the shape and size of the left and right sides of the stitch joint surface about the centerline C are substantially symmetrical. Can be.
  • a second physical property control element may be further added.
  • the second physical property control element can suppress work hardening that may occur during deformation of the bonding wire. As a result, an excellent effect capable of SOB bonding can be achieved, and an effect of improving cratering can also be obtained.
  • the second physical property control element may be at least one selected from the group consisting of platinum (Pt) and copper (Cu).
  • the content of the second physical property control element may include, for example, about 0.01 wt% to about 3 wt% of the total silver alloy bonding wire.
  • the effect of suppressing work hardening due to deformation of the bonding wire may be insignificant.
  • the content of the second physical property control element in the silver alloy bonding wire is too high, the electrical resistance of the bonding wire becomes excessively high, and side effects such as hardening due to alloying may occur.
  • the cross section of the wire is reduced by drawing after casting in the form of a bar according to the content given above. At this time, it is appropriate to adjust the cross-sectional reduction rate of the bonding wires before and after the die to about 7% to about 10%. That is, when the wire in the wire passes through one die, it is desirable to configure the process such that the cross-sectional area after passage decreases by about 7% to about 10% compared to the cross-sectional area before passage.
  • the cross sectional reduction rate of the bonding wire is too high, the dispersion of grains in the bonding wire may be excessively large.
  • the cross sectional reduction rate of the bonding wire is too low, the number of drawing operations required to obtain the bonding wire of the desired diameter is too large, which may be economically disadvantageous.
  • the method may further include a purification process for purifying raw materials prior to the casting process.
  • the intermediate annealing process may be further included from time to time during the drawing process.
  • the size of the grains inside the bonding wire becomes finer, and as the size of the grains becomes finer, the ductility and malleability of the bonding wire may be degraded, so that the intermediate annealing is alleviated and diffused to distribute the components more uniformly.
  • the process can be performed. More specifically, by performing the intermediate annealing process, the grains inside the bonding wire may be increased in size, and ductility and malleability required for processing may be secured.
  • the intermediate annealing temperature may be performed for about 0.5 seconds to about 30 seconds at a temperature of approximately 250 °C to 450 °C.
  • intermediate annealing temperature is too low, ductility and malleability necessary for processing may not be secured. On the contrary, if the intermediate annealing temperature is too high, strength may be weakened, thereby causing disconnection during drawing.
  • the final annealing process may be performed after the drawing is completed.
  • the final annealing process may be carried out for about 1 second to about 20 minutes at a temperature of about 400 ° C to about 600 ° C.
  • the final annealing temperature is too low, the ductility and malleability required for bonding bonding may not be secured. On the contrary, if the final annealing temperature is too high, the grain size may be excessively large, and the loop of the bonding may be excessively large. It is not preferable because a defect such as sag can occur.
  • the final annealing time is too short, ductility and malleability necessary for processing may not be secured. On the contrary, if the final annealing time is too long, the grain size may be excessively large and economically disadvantageous, which is not preferable.
  • the intermediate annealing process and the final annealing process above can be performed, for example, by passing the bonding wire through the furnace at a suitable speed.
  • the speed of passing the bonding wire through the furnace can be determined from the annealing time and the dimensions of the furnace.
  • Wire samples were immersed in 5% hydrochloric acid and sulfuric acid to visually inspect the degree of corrosion of the surface in units of time. If surface corrosion is confirmed within 1 hour, ⁇ 1 hour resistance is confirmed, but if surface corrosion is confirmed within 2 hours, ⁇ , resistance is confirmed for 2 hours or more. If there was no change, it evaluated as ().
  • Bonding of the ball bonding / stitch bonding method was performed by ultrasonic thermocompression method using K & S Maxum Ultra equipment using the manufactured bonding wire.
  • a ball is formed at the end of the wire by arc discharge in an N 2 gas atmosphere to first bond to an approximately 0.6 ⁇ m thick aluminum pad on a silicon substrate, which is then extended to a wedge bond to a 2 ⁇ m Ag or Pd plated 220 ° C. lead frame. was done.
  • Bonding was performed on 6000 bonding pads using the same bonding wire, and after the aluminum pad was dissolved with an alkaline solution to remove the bonded wire, the silicon substrate at the position where the aluminum pad was present was observed to be damaged. .
  • ⁇ if there is no damage or cracks on the silicon substrate at all, ⁇ if there are no damages or cracks 3 or less, ⁇ if there are 4 or 10 damages or cracks, ⁇ , if there are more than 10 damages or cracks It evaluated by x.
  • the bonding wire is located at the center of the ball, and the edge is determined to be round without a petal shape
  • the length of the bonded ball in the horizontal and vertical directions When the ratio of is 0.96 or more and less than 0.99 and the bonding wire is located at the center of the ball, and the edge is determined to be round without petal shape, the ratio of the length of the bonded ball in the horizontal axis direction and the vertical axis direction is 0.9 or more, and the edge is shaped like a petal. There was no, and if it did not correspond to ⁇ or ⁇ above, ⁇ , otherwise, evaluated as ⁇ .
  • Thermal shock reliability was used commercially available thermal cycling test (TCT) equipment. After wire bonding, it is sealed with epoxy molding resin (EMC), and thermal shock is repeatedly applied under severe conditions (-45 ° C / 30 minutes to + 125 ° C / 30 minutes), and then the bonding wire is broken by shrinkage / expansion. The number of losing wires was measured. ⁇ if there are no wires broken out of 6000 wires, ⁇ if there are more than 1 or less than 5 wires broken, ⁇ if 5 or more and less than 20 wires are broken, ⁇ .
  • TCT thermal cycling test
  • the package sealed with epoxy molding resin was left under 121 degreeC and 85% humidity, the time which the short circuit generate
  • produces in a joining surface is 500 hours or more, (circle), 396 hours or more and less than 500 hours, it evaluated as (circle), 198 hours or more and less than 396 hours, (triangle
  • Bonding was carried out under N 2 gas not containing hydrogen and evaluated for the number of times the equipment was stopped by ball-shaped nonuniformity for 1 hour. When the number of times stopped by ball-shaped nonuniformity for 1 hour was 0, it was evaluated as ⁇ , 1 to 3 times, ⁇ , 4 to 10 times, ⁇ , and 10 times or more.
  • the composition of palladium (Pd) and gold (Au) is within 0.5 to 4% by weight, within 2 to 8% by weight, respectively, and the first physical property control element is 30 to 100 ppm by weight Even if added in the range of ppm, if the ratio (a / b) of the average grain size (a) of the outer part to the average grain size (b) of the center part is not present in the range of 0.3 to 3, pad cratering, stitch bonding, thermal shock It was found to have inferior physical properties in terms of strength and the like.
  • the first physical property control element is 30 ppm by weight to 100 ppm by weight. It could be confirmed from the results of Tables 1 to 4 that it can have more excellent physical properties if added in the range.
  • the composition of palladium (Pd) and gold (Au) is respectively within 0.5 to 4% by weight, within 2 to 8% by weight and 0.01 to 3% by weight of the second physical property control element. Even if added in the range of%, if the ratio (a / b) of the average grain size (a) of the outer part to the average grain size (b) of the center part is not present in the range of 0.3 to 3, pad cratering, stitch bonding, thermal shock It was found to have inferior physical properties in terms of strength and the like.
  • the second physical property adjusting element is 0.01 wt% to 3 wt% It could be confirmed from the results of Tables 1 to 4 that it can have more excellent physical properties if added in the range.
  • the present invention can be usefully used in the semiconductor industry.

Abstract

La présente invention a trait à un fil de connexion en alliage d'argent (Ag) et, plus particulièrement, à un fil de connexion en alliage d'argent qui est doté d'argent en tant qu'ingrédient principal, qui comprend de 0,5 à 4 % en poids de palladium (Pd) et de 2 à 8 % en poids d'or (Au), lequel fil de connexion en alliage d'argent est caractérisé en ce que, lorsque le fil de connexion est coupé perpendiculairement au sens de la longueur, le rapport (a/b) de la dimension moyenne des particules (a) de la partie extérieure de la coupe transversale sur la dimension moyenne des particules (b) de la partie centrale de la coupe transversale est de 0,3 à 3. Le fil de connexion selon la présente invention est doté de propriétés de résistance élevée à une impulsion thermique, d'une excellente connexion SOB et d'une excellente connexion dans une atmosphère d'azote.
PCT/KR2014/000038 2013-01-04 2014-01-03 Fil de connexion en alliage d'argent WO2014107040A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201480011968.2A CN105122435A (zh) 2013-01-04 2014-01-03 银合金接合线
PH12015501521A PH12015501521A1 (en) 2013-01-04 2015-07-03 Silver alloy bonding wire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130001243A KR101416778B1 (ko) 2013-01-04 2013-01-04 은 합금 본딩 와이어
KR10-2013-0001243 2013-01-04

Publications (1)

Publication Number Publication Date
WO2014107040A1 true WO2014107040A1 (fr) 2014-07-10

Family

ID=51062322

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2014/000038 WO2014107040A1 (fr) 2013-01-04 2014-01-03 Fil de connexion en alliage d'argent

Country Status (4)

Country Link
KR (1) KR101416778B1 (fr)
CN (1) CN105122435A (fr)
PH (1) PH12015501521A1 (fr)
WO (1) WO2014107040A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107708919A (zh) * 2015-09-29 2018-02-16 贺利氏材料新加坡私人有限公司 合金化银线

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI545207B (zh) * 2014-07-10 2016-08-11 Nippon Steel & Sumikin Mat Co A bonding wire for a semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100023893A (ko) * 2008-01-25 2010-03-04 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
US20100239455A1 (en) * 2009-03-23 2010-09-23 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof
US20100239456A1 (en) * 2009-03-23 2010-09-23 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101001700B1 (ko) * 2007-03-30 2010-12-15 엠케이전자 주식회사 반도체 패키지용 은합금 와이어
JP5616165B2 (ja) * 2010-08-24 2014-10-29 タツタ電線株式会社 銀ボンディングワイヤ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100023893A (ko) * 2008-01-25 2010-03-04 신닛테츠 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
US20100239455A1 (en) * 2009-03-23 2010-09-23 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof
US20100239456A1 (en) * 2009-03-23 2010-09-23 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107708919A (zh) * 2015-09-29 2018-02-16 贺利氏材料新加坡私人有限公司 合金化银线
CN107708919B (zh) * 2015-09-29 2020-02-07 贺利氏材料新加坡私人有限公司 合金化银线

Also Published As

Publication number Publication date
CN105122435A (zh) 2015-12-02
PH12015501521A1 (en) 2015-09-21
KR101416778B1 (ko) 2014-07-09

Similar Documents

Publication Publication Date Title
WO2014129745A1 (fr) Fil de connexion en alliage d'argent
KR101583865B1 (ko) Ａｇ-Ａｕ-Ｐｄ를 기본으로 하는 합금계 본딩 와이어
US9972595B2 (en) Bonding wire for high-speed signal line
KR101137751B1 (ko) 볼 접합용 피복 구리 와이어
KR101087527B1 (ko) 높은 접합 신뢰성, 압착 볼의 높은 진원성, 높은 직진성 및높은 내수지 흐름성을 갖는 본딩 와이어용 금 합금선
WO2013018238A1 (fr) Fil de soudage par boule
WO2012098771A1 (fr) Fil destiné à une soudure par écrasement de boule
WO2015037876A1 (fr) Fil de connexion en alliage d'argent et dispositif à semi-conducteur l'utilisant
WO2015034287A1 (fr) Fil de connexion en alliage d'argent et son procédé de fabrication
WO2015152191A1 (fr) Fil de connexion utilisé avec des dispositifs à semi-conducteurs et son procédé de fabrication
JP7126321B2 (ja) Ａｌボンディングワイヤ
WO2014107040A1 (fr) Fil de connexion en alliage d'argent
US20170256517A1 (en) Silver bonding wire and method of manufacturing the same
JP2005268771A (ja) 半導体装置用金ボンディングワイヤ及びその接続方法
KR101087526B1 (ko) 높은 초기 접합성, 높은 접합 신뢰성, 압착 볼의 높은진원성, 높은 직진성, 높은 내수지 흐름성 및 낮은비저항을 갖는 본딩 와이어용 금 합금선
US7857189B2 (en) Gold alloy wire for bonding wire having high initial bondability, high bonding reliability, high roundness of compression ball, high straightness, and high resin flowability resistance
CN104087780B (zh) 一种半导体器件用键合铜合金丝及其制造方法
JP3612179B2 (ja) 半導体素子用金銀合金細線
JPH10326803A (ja) 半導体素子用金銀合金細線
JPWO2015152197A1 (ja) 半導体装置用ボンディングワイヤ及びその製造方法
JP7142761B1 (ja) ボンディングワイヤ及び半導体装置
JP5080682B1 (ja) 金−白金−パラジウム合金ボンディングワイヤ
JP3426473B2 (ja) 半導体素子用金合金細線
JP3639662B2 (ja) 半導体素子用金合金細線
JP2000357706A (ja) ボンディング用金合金線

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14735257

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14735257

Country of ref document: EP

Kind code of ref document: A1