WO2014101814A1 - 一种柔性衬底 - Google Patents

一种柔性衬底 Download PDF

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Publication number
WO2014101814A1
WO2014101814A1 PCT/CN2013/090642 CN2013090642W WO2014101814A1 WO 2014101814 A1 WO2014101814 A1 WO 2014101814A1 CN 2013090642 W CN2013090642 W CN 2013090642W WO 2014101814 A1 WO2014101814 A1 WO 2014101814A1
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Prior art keywords
planarization
layer
flexible substrate
planarization layer
substrate
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PCT/CN2013/090642
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English (en)
French (fr)
Inventor
朱少鹏
邱勇
陈红
平山秀雄
黄秀颀
Original Assignee
昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Application filed by 昆山工研院新型平板显示技术中心有限公司, 昆山国显光电有限公司 filed Critical 昆山工研院新型平板显示技术中心有限公司
Priority to US14/758,388 priority Critical patent/US10109809B2/en
Priority to PL13869184T priority patent/PL2940750T3/pl
Priority to KR1020157020532A priority patent/KR101935337B1/ko
Priority to JP2015549975A priority patent/JP6091654B2/ja
Priority to EP13869184.5A priority patent/EP2940750B1/en
Priority to ES13869184.5T priority patent/ES2668143T3/es
Publication of WO2014101814A1 publication Critical patent/WO2014101814A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/14—Layered products comprising a layer of synthetic resin next to a particulate layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/10—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
    • B32B2264/10—Inorganic particles
    • B32B2264/102—Oxide or hydroxide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/724—Permeability to gases, adsorption
    • B32B2307/7242—Non-permeable
    • B32B2307/7244—Oxygen barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/726—Permeability to liquids, absorption
    • B32B2307/7265—Non-permeable
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851—Division of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface

Definitions

  • the present invention relates to the field of organic optoelectronics, and in particular to a flexible substrate for manufacturing organic optoelectronic devices such as 0LED, 0PV, 0TFT, etc. having a water-oxygen barrier function. Background technique
  • OLED Organic Light-Emitting Diodes
  • 0PV Organic Photovoltaic
  • 0TFT Organic Thin Film Transistor
  • OSL Organic Optical Pumping Laser
  • polystyrene ?3
  • polydecyl ether PES
  • polyethylene naphthalate PEN
  • polyimide PI
  • Organic optoelectronic devices are very sensitive to water and oxygen attack. Traces of water and oxygen can cause oxidation, crystallization or electrode degradation of organic materials in the device, affecting the life of the device or directly causing damage to the device. Compared with the glass substrate, the water and oxygen permeability of most polymer substrates are relatively high, which is not enough to ensure long-term reliable operation of the device.
  • the water vapor and oxygen permeation rates of common polymer substrates are shown in the following table.
  • a planarization layer and a water-oxygen barrier layer are usually alternately disposed on a polymer substrate to increase the water-oxygen barrier property of the polymer substrate.
  • a water-oxygen barrier layer 103 is disposed and separated by a planarization layer 102; a water-oxygen barrier layer 103 is used to insulate water vapor and oxygen, and to ensure dense film formation thereof.
  • the flatness of the film is provided between the adjacent water-oxygen barrier layers 103, as well as the growth of defects in the film.
  • 3 to 5 layers of water and oxygen barrier layer 103 are required on the polymer substrate to achieve suitable production of organic photoelectric devices. The water and oxygen barrier capacity of the piece.
  • the planarization layer 102 is generally a polymer material layer, and its water oxygen barrier property is not good.
  • the cut side surface is exposed to the outside air, and the water vapor and oxygen will be from the arrow.
  • the path penetrates into the interior of the device such that only one layer of water-oxygen barrier layer 103 acts as a barrier, severely affecting device performance.
  • the existing flexible substrate can only be first sized, and the coverage of the water-oxygen barrier layer and the planarization layer is defined according to its size, so that the coverage of the planarization layer is smaller than that of the water-oxygen barrier layer.
  • the multilayer water-oxygen barrier layer can be connected to each other at the edge of the flexible substrate to prevent water vapor and oxygen from penetrating sideways.
  • the problem with this solution is that the prepared flexible substrate cannot be cut to suit the needs of different sized products. Different sized products require a mask suitable for the size of the product to define the planarization layer and the water and oxygen barrier. The size of the layer undoubtedly increases production costs.
  • roll-to-roll coating is considered to be an effective means to increase the productivity of a flexible substrate with a water-oxygen barrier membrane and reduce the production cost, but the process necessarily involves a cutting process, and in the preparation method of the above water-oxygen barrier membrane system, Applicable to the roll-to-roll process, which can not effectively reduce production costs.
  • a flexible substrate comprising a polymer substrate and a plurality of water and oxygen barrier layers disposed on the substrate, wherein a planarization layer is disposed between the adjacent water and oxygen barrier layers, and the planarization layer comprises a plurality of a planarization unit in which the first direction and the second direction are separated from each other, and the projection of the planarization unit on the substrate in the planarization layer covers adjacent ones of the adjacent planarization layers A gap of projection on the substrate, and the projection areas partially overlap.
  • the water oxygen barrier layer covers a gap between the planarization units.
  • the thickness of the odd or even layers in the planarization layer is sequentially decreased in a direction away from the substrate, respectively.
  • the angle between the first direction and the second direction is greater than 0 and less than 180.
  • the planarization unit in the planarization layer is periodically arranged in both the first direction and the second direction.
  • the projections of the planarization units on the substrate in adjacent planarization layers differ by a half cycle.
  • the planarization layer has a thickness of 100 to 5000 nm.
  • the projection of the planarization unit on the substrate has a width in any direction of 10-2000 ⁇ .
  • a pitch of adjacent planarization units on the substrate in the same planarization layer is 10-2000 ⁇ .
  • the planarization unit in the same planarization layer has the same shape projected on the substrate, but may be different.
  • the shapes of the flattening units projected on the substrate in the different planarization layers are preferably the same, but may be different.
  • the planarization layer is produced by ink jet printing - ultraviolet curing, flash evaporation - ultraviolet curing, chemical vapor deposition, gas phase polymerization or plasma polymerization.
  • the material of the planarization layer is a polymer.
  • the polymers used in the different planarization layers may be the same or different.
  • the polymer is selected from at least one of polyacrylate, parylene, polyurea, polyethylene terephthalate, polyethylene naphthalate, and polystyrene.
  • the water oxygen barrier layer has a thickness of 20 to 200 nm.
  • the thickness of the different water-oxygen barrier layers may be the same or different.
  • the water oxygen barrier layer is prepared by selective sputtering, radio frequency sputtering, reactive sputtering, plasma enhanced chemical vapor deposition or atomic layer deposition.
  • the material of the water oxygen barrier layer is at least one selected from the group consisting of alumina, silica, silicon nitride, titanium oxide, zirconium oxide, aluminum oxynitride, silicon oxynitride, and amorphous carbon.
  • the materials of the different water-oxygen barrier layers may be the same or different.
  • the planarization layer is composed of a plurality of planarization units separated from each other in a first direction and a second direction; wherein the planarization unit in the planarization layer is A projection on the substrate covers a gap between projections of the planarization unit on the substrate in adjacent planarization layers, and the projection regions partially overlap. Therefore, adjacent planarization layers can cover each other at a gap position between the constituent units to block lateral penetration of water and oxygen, ensuring that the flexible substrate can be cut at any size within a scale larger than the planarization unit. Large-scale production of flexible substrates can be achieved, simplifying process steps, thereby reducing production costs.
  • the thickness of the odd or even layer of the planarization layer is successively decreased in a direction away from the substrate to reduce the top surface roughness of the flexible substrate, which is suitable for device fabrication.
  • the planarization unit in the planarization layer is periodically arranged in both the first direction and the second direction, adjacent to the planarization unit in the planarization layer on the substrate.
  • the projections are separated by a half cycle, the flattening unit arrangement rules are easy to implement in the process, and it can be ensured that the adjacent planarization layers can cover each other the gap positions between the constituent units, and effectively block the horizontal penetration of water and oxygen.
  • the flattening layer and the flattening unit have large sizes, low preparation precision, and are easy to implement in the process. 5.
  • the thickness of the planarization layer and the water-oxygen barrier layer in the flexible substrate provided by the present invention are both low, and the thickness of the device using the flexible substrate can be effectively reduced.
  • FIG. 1 is a schematic cross-sectional view of a flexible substrate having a water-oxygen barrier film in the prior art
  • FIG. 2 is a schematic cross-sectional view of the flexible substrate in the embodiment of the present invention.
  • FIG. 3 is a view showing a positional relationship of a flattening unit projected on a substrate in an adjacent planarization layer in the flexible substrate according to Embodiment 1 of the present invention
  • FIG. 4 is a view showing a positional relationship of a flattening unit projected on a substrate in an adjacent planarization layer in the flexible substrate according to Embodiment 2 of the present invention
  • Figure 5 is a view showing the positional relationship of a flattening unit projected on a substrate in an adjacent flattening layer in the flexible substrate in Embodiment 3 of the present invention.
  • a flexible substrate provided in this embodiment includes a polyimide substrate 201 (hereinafter referred to as a short
  • a PI substrate a PI substrate
  • first water-oxygen barrier layer 202 a first planarization layer 203
  • second water-oxygen barrier layer 204 a second planarization layer 205
  • third water-oxygen barrier disposed on the PI substrate 201 in this order.
  • the layer 206, the third planarization layer 207, the fourth water oxygen barrier layer 208, the fourth planarization layer 209, and the fifth water oxygen barrier layer 210 The layer 206, the third planarization layer 207, the fourth water oxygen barrier layer 208, the fourth planarization layer 209, and the fifth water oxygen barrier layer 210.
  • the first planarization layer 203, the second planarization layer 205, the third planarization layer 207, and the fourth planarization layer 209 are separated from each other and periodically arranged in the first direction and the second direction.
  • the flattening unit of the cloth is composed.
  • the water-oxygen barrier layer covers the gap between the planarization units to block lateral penetration of water and oxygen.
  • the first direction is indicated by the direction of the dotted line arrow
  • the second direction is indicated by the direction of the dotted arrow.
  • the angle between the first direction and the second direction is 90 °.
  • the shapes of projections of the respective planarization units on the PI substrate 201 are the same.
  • the projections are all rectangles of the same size, with a length of 500 ⁇ ⁇ and a width of 400 ⁇ ⁇ .
  • the adjacent rectangles have the same pitch in the first direction and the second direction, both being 100 ⁇ .
  • the projection arrangement of the planarizing cells on the PI substrate 201 in adjacent planarization layers differs by half a cycle.
  • the thickness 4 of the first planarization layer is 3000 nm
  • the thickness d 2 of the second planarization layer 205 is 3000 nm
  • the thickness d 3 of the third planarization layer 207 is 1500 nm
  • the fourth planarization layer 209 The thickness is 400 nm.
  • the third planarization layer 207 is smaller than the thickness of the first planarization layer 203.
  • the thickness of the fourth planarization layer 209 is smaller than the thickness d 2 of the second planarization layer.
  • the thickness of the nth planarization layer is smaller than the thickness of the n-2th planarization layer (n is a natural number, and !! > 2).
  • the second planarization layer 205 and the first planarization layer 203, the third planarization layer 207 and the second planarization layer 205, and the fourth planarization layer 209 and the third planarization layer 207 are each arranged in half by a flattening unit arrangement.
  • the cycle, and thus the center of the planarization unit in one of the two planarization layers, is disposed on the gap of the planarization unit in the other planarization layer to block lateral penetration of water and oxygen.
  • the planarization unit is completely separated from each other in the first direction and the second direction, so that the flexible substrate can be cut in any size larger than the scale of the planarization unit, and mass production of the flexible substrate can be realized, for example, Roll-to-roll process. Since the size of the planarization unit is large and the preparation accuracy is low, it is easy to implement in the process.
  • the PI substrate 201 may be selected from other polymer flexible substrates such as PET, PEN, PES, PE, PP, PS and so on.
  • the material of the planarization layer is a polymer such as polyacrylate, parylene, polyurea, polyethylene terephthalate, polyethylene naphthalate, polystyrene or the like.
  • the first planarization layer 203, the second planarization layer 205, and the third planarization layer 207 are the same materials as the fourth planarization layer 209, and are preferably polyacrylates, and are inkjet-UV cured. Process preparation.
  • the method for preparing the planarization layer may be flash evaporation-ultraviolet curing, chemical vapor deposition, gas phase polymerization, plasma polymerization, or the like.
  • the materials used for the first planarization layer 203, the second planarization layer 205, the third planarization layer 207, and the fourth planarization layer 209 may also be different, each selected from the group consisting of polyacrylate, parylene, polyurea, and poly Ethylene terephthalate, polyethylene naphthalate, polystyrene, and the like.
  • the first water oxygen barrier layer 202, the second water oxygen barrier layer 204, the third water oxygen barrier layer 206, the fourth water oxygen barrier layer 208, and the fifth water oxygen barrier layer 209 have the same thickness. 50 nm.
  • the materials used were also the same, silicon nitride, and prepared by a plasma enhanced chemical vapor deposition (PECVD) process.
  • the water-oxygen barrier layer may range in thickness from 20 to 200 nm.
  • the method for preparing the water-oxygen barrier layer may also be selected from the group consisting of magnetron sputtering, radio frequency sputtering, reactive sputtering, plasma enhanced chemical vapor deposition, and atomic layer deposition.
  • the materials of the different water-oxygen barrier layers may be different and may be selected from the group consisting of alumina, silica, silicon nitride, titanium oxide, zirconium oxide, aluminum oxynitride, silicon oxynitride, and amorphous carbon.
  • a flexible substrate structure provided in this embodiment is prepared in the same manner as Embodiment 1, except that the first planarization layer 203, the second planarization layer 205, and the third planarization layer 207 are provided.
  • the shape in which the planarization unit in the fourth planarization layer 209 is projected on the PI substrate 201 is different from that in the first embodiment.
  • the projections of the planarization units on the PI substrate 201 in the first planarization layer 203 and the third layer 207 are circular with equal radii, and the projections coincide.
  • the radius of the circle is 800 ⁇ ⁇ .
  • the first direction is indicated by the direction of the dotted line arrow, and the second direction is indicated by the direction of the dotted arrow.
  • the adjacent circles have the same pitch in the first direction and the second direction, both being 200 ⁇ .
  • the planarizing elements in the second planarizing layer 205 and the fourth planarizing layer 209 are projected as a circle on the cymbal substrate 201 with a radius of 500 ⁇ m, and the projections on the PI substrate 201 coincide.
  • the thickness 4 of the first planarization layer is 2000 nm
  • the thickness d 2 of the second planarization layer is 1800 nm
  • the thickness 4 of the third planarization layer is 500 nm
  • the thickness of the fourth planarization layer is 600 nm.
  • the center of the planarization unit in one of the planarization layers is located on the gap of the planarization unit in the other planarization layer to block the lateral penetration of water oxygen, ensuring the flexibility
  • the substrate can be cut in any size larger than the scale of the planarization unit, which enables large-scale production of the flexible substrate, simplifies the process steps, and reduces the production cost.
  • the thickness of the odd or even layer in the planarization layer is sequentially transferred away from the direction of the substrate Subtracting, reducing the top surface roughness of the flexible substrate to suit the fabrication of the device.
  • a flexible substrate structure of the present embodiment is prepared in the same manner as Embodiment 2, except that the first planarization layer 203, the second planarization layer 205, the third planarization layer 207, and the fourth
  • the arrangement of the planarization units in the planarization layer 209 is different from that of the first and second embodiments.
  • the planarizing layer unit is periodically arranged in the first direction and the second direction, and the angle between the two directions is 90 °.
  • the first direction is indicated by a dotted line arrow direction
  • the second direction is indicated by a dotted arrow direction
  • the flattening unit is periodically arranged in the first direction and the second direction.
  • the angle between the two directions is 60 °.
  • the planarization unit in the first planarization layer 203 and the third planarization layer 207 is projected on the PI substrate 201 into an equi-radius circular shape.
  • the projections of the first planarization layer 203 and the third planarization layer 207 on the PI substrate 201 coincide, and the radius of the projection circle is 800 ⁇ .
  • the spacing of adjacent circular circles in the first direction and the second direction is equal, being 200 ⁇ .
  • the planarization unit in the second planarization layer 205 and the fourth planarization layer 209 is also projected on the ruthenium substrate 201 to have an equi-radius circular shape with a radius of 500 ⁇ m.
  • the thickness of the first planarization layer is ⁇ ? . . . !
  • the thickness d 2 of the second planarization layer 205 is
  • the thickness d 3 of the third planarization layer is 500 nm, and the thickness of the fourth planarization layer is 600 nm.
  • the projection of the planarization unit on the PI substrate 201 is different by half a cycle, so that in the adjacent two planarization layers, the center of the planarization unit in one of the planarization layers is disposed on the other layer.
  • the gap of the planarization unit in the planarization layer blocks the lateral penetration of water and oxygen, ensuring that the flexible substrate can be cut in any size larger than the scale of the planarization unit, thereby achieving mass production of the flexible substrate. , simplifies the process steps, thereby reducing production costs.
  • the thickness of the planarization layer of the odd-numbered layer or the even-numbered layer in the planarization layer is successively decreased in a direction away from the substrate, ensuring that the topmost surface roughness of the flexible substrate is low, which is suitable for device fabrication.
  • the number of layers of the water-oxygen barrier layer and the planarization layer is not limited, and the number of layers may be increased or decreased according to the specific use and the need of the flexible substrate.
  • the planarization unit may be of any shape, and the shapes of the planarization units in the same planarization layer may be the same or different, and the shapes of the planarization units in different planarization layers may be the same or different, and the planarization layer is planarized.
  • the projection of the unit on the substrate covers the gap between the projections of the planarization unit on the substrate in the adjacent planarization layer, and the projection regions are partially overlapped, so that the adjacent planarization layers can cover each other to cover the gap position between the constituent units, Block horizontal penetration of water oxygen. As shown in FIG.
  • the relative positions of the adjacent odd-numbered planarization layers and the even-numbered planarization layers projected on the substrate, and the planarization units in the odd-numbered or even-numbered layers are each on the substrate
  • the projections overlap.
  • the thickness of the planarization layer ranges from 100 to 5000 nm
  • the projection of the planarization unit on the substrate has a width of 10-2000 in any direction. ⁇ ⁇ .
  • the pitch of the adjacent planarization unit in the first direction or the second direction in the same planarization layer is 10-2000 ⁇ , and the thickness of the odd-numbered layer or the even-numbered layer of the planarization layer is sequentially decreased in the direction away from the substrate, and finally flat surface.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
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Abstract

一种柔性衬底，包括聚合物基片（201）以及设置在基片（201）上的多个水氧阻隔层（202、204、206、208、210），相邻水氧阻隔层（202、204、206、208、210）之间设置有平坦化层（203、205、207、209），平坦化层（203、205、207、209）包括多个在第一方向和第二方向均相互分离的平坦化单元（203、205、207、209），平坦化层中平坦化单元（203、205、207、209）在基片（201）上的投影覆盖相邻平坦化层中平坦化单元（203、205、207、209）在基片（201）上的投影间的间隙，且投影区域部分重叠。这样相邻平坦化层（203、205、207、209）能够相互覆盖组成单元之间的缝隙位置，以阻挡水氧的横向穿透，确保柔性衬底能在大于平坦化单元的尺度范围内任意尺寸裁切，以实现柔性衬底的大规模生长，简化了工艺步骤，降低了生产成本。

Description

一种柔性衬底 技术领域
本发明涉及有机光电领域， 具体涉及一种具有水氧阻隔功能的用于制造 0LED、 0PV、 0TFT等有机光电器件的柔性衬底。 背景技术
有机电致发光二极管 （Organic Light-Emitting Diodes, 简称为 0LED)、 有机太阳 能电池 （Organic Photovoltaic, 简称为 0PV)、 有机薄膜场效应晶体管 （Organic Thin Film Transistor, 简称为 0TFT)、 有机光泵浦激光器 (Organic Semiconductor Lasers, 简称为 OSL) 等有机光电器件最具魅力的所在就是可以实现柔性化， 具体是将有机光电 器件制作在柔性聚合物衬底上， 如聚乙烯 （PE)、 聚丙烯 （？？）、 聚苯乙烯 （？3)、 聚矾醚 (PES), 聚对萘二甲酸乙二醇酯 （PEN)、 聚酰亚胺 （PI ) 等， 这些聚合物衬底可以使得 有机光电器件弯曲， 并且可以卷成任意形状。
有机光电器件对水氧的侵蚀非常敏感，微量的水氧就会造成器件中有机材料的氧化、 结晶或者电极的劣化， 影响器件的寿命或者直接导致器件的损坏。 而与玻璃衬底相比， 大部分聚合物衬底的水、 氧透过率比较高， 不足以保证器件的长期可靠运行， 常见聚合 物衬底的水汽、 氧气渗透速率如下表所示。
Figure imgf000003_0001
现有技术中， 通常会在聚合物基板上交替设置平坦化层和水氧阻隔层， 以增加聚合 物基板的水氧阻隔能力。 如图 1所示， 在聚合物基片 101上，设置水氧阻隔层 103， 并以 平坦化层 102隔开； 水氧阻隔层 103用于隔绝水汽和氧气， 而为了保证其成膜的致密性 和平整性， 以及膜内缺陷的生长， 在相邻的水氧阻隔层 103之间设置平坦化层 102。 通 常， 聚合物衬底上需要设置 3〜5层以上的水氧阻隔层 103才能达到合适生产有机光电器 件的水氧阻隔能力。 然而平坦化层 102—般为聚合物材料层， 其水氧阻隔能力不佳， 当 聚合物衬底需要切割时， 切割后的侧面就会暴露于外界的空气中， 水汽和氧气便会从箭 头所述路径渗入器件内部， 使得只有一层水氧阻隔层 103起到阻隔作用， 严重影响器件 的性能。
为了解决这一问题， 现有的柔性衬底只能先定义尺寸， 在根据其尺寸定义水氧阻隔 层和平坦化层的覆盖范围， 使得平坦化层的覆盖范围小于水氧阻隔层的范围， 从而使得 多层水氧阻隔层能在柔性衬底的边缘彼此相连， 防止水汽和氧气在侧方渗入。 而这种解 决方案带来的问题是， 所制备的柔性衬底不能切割以适应不同尺寸产品的需求， 不同尺 寸的产品需要适合该产品尺寸的一套掩膜来定义平坦化层和水氧阻隔层的尺寸， 无疑增 加了生产成本。
另外， 卷对卷镀膜被认为是提升具有水氧阻隔膜系柔性衬底产能， 降低生产成本的 有效手段， 但是该工艺必然包含切割的过程， 而在上述水氧阻隔膜系的制备方法中不适 用卷对卷工艺， 不能有效降低生产成本。 发明内容
基于此， 有必要针对现有技术中具有水氧阻隔层的柔性衬底不能切割、 生产成本高的 问题， 提供一种新型可切割且生产成本低的柔性衬底。
为解决上述技术问题， 本发明采用的技术方案如下：
一种柔性衬底， 包括聚合物基片以及设置在基片上的多个水氧阻隔层， 相邻的所述水 氧阻隔层之间设置有平坦化层， 所述平坦化层包括多个在第一方向和第二方向均相互分离 的平坦化单元， 所述平坦化层中所述平坦化单元在所述基片上的投影， 覆盖相邻所述平坦 化层中相邻所述平坦化单元在所述基片上的投影的间隙， 且所述投影区域部分重叠。
优选地， 所述水氧阻隔层覆盖所述平坦化单元之间的间隙。
优选地， 所述平坦化层中奇数层或偶数层的厚度分别在远离所述基片的方向上依次递 减。
优选地， 所述第一方向和所述第二方向的夹角大于 0 且小于 180 。
优选地， 所述平坦化层中的所述平坦化单元在所述第一方向和所述第二方向均呈周期 性排布。
优选地， 相邻所述平坦化层中所述平坦化单元在所述基片上的投影相差半个周期。 优选地， 所述平坦化层的厚度为 100-5000 nm。
优选地， 所述平坦化单元在所述基片上的投影在任意方向上的宽度为 10-2000 μ πι。 优选地， 同一所述平坦化层中相邻所述平坦化单元在所述基片上的投影的间距为 10-2000 μ πι。
优选地， 同一所述平坦化层中所述平坦化单元在所述基片上投影的形状相同， 但也可 以不同。
此外， 不同所述平坦化层中所述平坦化单元在所述基片上投影的形状优选相同， 但也 可以不同。
优选地， 所述平坦化层由喷墨打印 -紫外固化、 闪蒸发 -紫外固化、 化学气相沉积、 气 相聚合或等离子体聚合制得。
优选地， 所述平坦化层的材料为聚合物。 不同所述平坦化层所用的所述聚合物可以相 同或不同。 所述聚合物选自聚丙烯酸酯、 聚对二甲苯、 聚脲、 聚对苯二甲酸乙二醇酯、 聚 萘二甲酸乙二醇酯、 聚苯乙烯中的至少一种。
优选地， 所述水氧阻隔层的厚度为 20-200 nm。 不同所述水氧阻隔层的厚度可以相同 或不同。
优选地， 所述水氧阻隔层由选自直流溅射、 射频溅射、 反应溅射、 等离子体增强化学 气相沉积或原子层沉积制得。
优选地， 所述水氧阻隔层的材料选自氧化铝、 氧化硅、 氮化硅、 氧化钛、 氧化锆、 氮 氧化铝、氮氧化硅、非晶碳中的至少一种。不同所述水氧阻隔层的材料可以相同或者不同。
本发明的上述技术方案相比现有技术具有以下优点：
1. 本发明提供的柔性衬底， 所述平坦化层由多个在第一方向和第二方向上均相互分 离的平坦化单元组成； 所述平坦化层中所述平坦化单元在所述基片上的投影覆盖在相邻所 述平坦化层中所述平坦化单元在所述基片上的投影间的间隙上， 且所述投影区域部分重 叠。 因此， 相邻平坦化层能相互覆盖组成单元之间的缝隙位置， 以阻挡水氧的横向穿透， 确保所述柔性衬底能在大于所述平坦化单元的尺度范围内任意尺寸裁切， 可以实现柔性衬 底的大规模生产， 简化了工艺步骤， 从而降低了生产成本。
2. 所述平坦化层的奇数层或偶数层的厚度沿远离所述基片的方向依次递减，降低所述 柔性衬底的最顶面粗糙度， 适合器件的制备。
3. 所述平坦化层中的所述平坦化单元在所述第一方向和所述第二方向均呈周期性排 布， 相邻所述平坦化层中平坦化单元在所述基片上的投影相差半个周期， 所述平坦化单元 排布规则， 工艺上容易实现， 并且可以确保相邻平坦化层能相互覆盖组成单元之间的缝隙 位置， 有效阻挡水氧的横向穿透。
4. 所述平坦化层和所述平坦化单元的尺寸较大，制备精度要求低，在工艺上容易实现。 5. 本发明提供的柔性衬底中所述平坦化层和所述水氧阻隔层的厚度均较低，能有效降 低使用所述柔性衬底的器件的厚度。 附图说明
为了使本发明的内容更容易被清楚的理解， 下面根据本发明的具体实施例并结合附 图， 对本发明作进一步详细的说明， 其中：
图 1是现有技术中具有水氧阻隔膜系柔性衬底的横截面示意图；
图 2是本发明实施例中所述柔性衬底的横截面示意图；
图 3是本发明实施例 1中所述柔性衬底中相邻平坦化层中平坦化单元在基片上投影 的位置关系图；
图 4是本发明实施例 2中所述柔性衬底中相邻平坦化层中平坦化单元在基片上投影 的位置关系图；
图 5是本发明实施例 3中所述柔性衬底中相邻平坦化层中平坦化单元在基片上投影 的位置关系图。
其中， 附图标记表示如下：
101、 聚合物基片；
102、 平坦化层；
103、 水氧阻隔层；
201、 聚酰亚胺基片；
202、 第一水氧阻隔层;
203、 第一平坦化层；
204、 第二水氧阻隔层;
205、 第二平坦化层；
206、 第三水氧阻隔层;
207、 第三平坦化层；
208、 第四水氧阻隔层;
209、 第四平坦化层；
210、 第五水氧阻隔层;
301、 奇数层平坦化层;
302、 偶数层平坦化层。 具体实施方式
为使本发明的目的、 技术方案和优点更加清楚， 下面将结合附图对本发明实施方式 作进一步地详细描述。
实施例 1
如图 2所示， 本实施例所提供的一种柔性衬底， 包括聚酰亚胺基片 201 (以下简称
PI基片）、 依次层叠设置在 PI基片 201上的第一水氧阻隔层 202、 第一平坦化层 203、 第二水氧阻隔层 204、 第二平坦化层 205、 第三水氧阻隔层 206、 第三平坦化层 207、 第 四水氧阻隔层 208、 第四平坦化层 209、 以及第五水氧阻隔层 210。
本实施例中， 第一平坦化层 203、 第二平坦化层 205、 第三平坦化层 207、 第四平坦 化层 209均由相互分离且在第一方向和第二方向均呈周期性排布的平坦化单元组成。 水 氧阻隔层覆盖平坦化单元之间的间隙， 阻挡水氧的横向穿透。
如图 3所示， 第一方向由点划线箭头方向表示， 第二方向由虚线箭头方向表示。 在 本实施例中， 第一方向和所述第二方向夹角为 90 ° 。 此外， 奇数层平坦化层 301和偶数 层平坦化层 302中，各个平坦化单元在 PI基片 201上的投影的形状相同。该投影均为大 小相同的矩形， 长度为 500 μ πι, 宽度为 400 μ πι。 相邻矩形在第一方向和第二方向上的 间距相等， 均为 100 μ πι。 相邻平坦化层中平坦化单元在 PI基片 201上的投影排布相差 半个周期。
在本实施例中， 第一平坦化层的厚度 4为 3000nm， 第二平坦化层 205的厚度 d2为 3000nm, 第三平坦化层 207的厚度 d3为 1500nm， 第四平坦化层 209的厚度 为 400nm。 第三平坦化层 207小于所述第一平坦化层 203的厚度 第四平坦化层 209的厚度 小 于第二平坦化层的厚度 d2。
作为选择， 若柔性衬底有更多平坦化层， 均满足如下条件： 第 n层平坦化层的厚度 小于第 n-2层平坦化层的厚度 （n为自然数， 且!! > 2)。
第二平坦化层 205与第一平坦化层 203、第三平坦化层 207与第二平坦化层 205、第 四平坦化层 209与第三平坦化层 207中平坦化单元排列各相差半个周期， 从而相邻两层 平坦化层中， 其中一层平坦化层中平坦化单元的中心设置在另一层平坦化层中平坦化单 元的间隙上， 以阻挡水氧的横向穿透。 此外， 平坦化单元在第一方向和第二方向上均彼 此完全分离， 从而柔性衬底能在大于平坦化单元的尺度范围内任意尺寸裁切， 可以实现 柔性衬底的大规模生产， 如使用卷对卷工艺。 由于平坦化单元的尺寸较大， 制备精度要 求低， 因此在工艺上容易实现。
作为选择， PI基片 201， 可选自其他聚合物柔性基片， 如 PET、 PEN, PES, PE、 PP、 PS等。
平坦化层的材料为聚合物， 如聚丙烯酸酯、 聚对二甲苯、 聚脲、 聚对苯二甲酸乙二醇 酯、 聚萘二甲酸乙二醇酯、 聚苯乙烯等。 本实施例中， 第一平坦化层 203、 第二平坦化层 205、 第三平坦化层 207与第四平坦化层 209所用材料相同， 均优选聚丙烯酸酯， 并通过 喷墨打印-紫外固化工艺制备。
作为选择， 平坦化层的制备方法还可以为闪蒸发 -紫外固化、 化学气相沉积、 气相聚 合、 等离子体聚合等。 第一平坦化层 203、 第二平坦化层 205、 第三平坦化层 207与第四 平坦化层 209所用材料也可以不相同， 各自选自聚丙烯酸酯、 聚对二甲苯、 聚脲、 聚对苯 二甲酸乙二醇酯、 聚萘二甲酸乙二醇酯、 聚苯乙烯等。
本实施例中， 第一水氧阻隔层 202、 第二水氧阻隔层 204、 第三水氧阻隔层 206、 第 四水氧阻隔层 208、 以及第五水氧阻隔层 209的厚度相同， 为 50 nm。 所用材料也相同， 为氮化硅， 并通过等离子体增强化学气相沉积 （PECVD) 工艺制备。
作为选择， 水氧阻隔层的厚度范围为 20-200 nm。 水氧阻隔层的制备方法还可以选自 磁控溅射、 射频溅射、 反应溅射、 等离子体增强化学气相沉积、 和原子层沉积等。 不同所 述水氧阻隔层的材料可以不同， 可选自氧化铝、 氧化硅、 氮化硅、 氧化钛、 氧化锆、 氮氧 化铝、 氮氧化硅、 和非晶碳等。
实施例 2
参见图 2， 本实施例中所提供的一种柔性衬底结构， 其制备方法同实施例 1， 不同点 在于， 第一平坦化层 203、 第二平坦化层 205、 第三平坦化层 207、 第四平坦化层 209中 平坦化单元在 PI基片 201上投影的形状与实施例 1不相同。
本实施例中， 如图 4所示， 第一平坦化层 203和第三层 207中平坦化单元在 PI基片 201上的投影为半径相等的圆形， 且投影重合。 该圆形的半径为 800 μ πι。 如图 4所示， 第 一方向由点划线箭头方向表示，第二方向由虚线箭头方向表示。相邻圆形在第一方向和第 二方向上的间距相等， 均为 200 μ πι。 第二平坦化层 205和第四平坦化层 209中平坦化单 元在 ΡΙ基片 201上投影为圆形， 半径为 500 μ πι， 且在 PI基片 201上的投影重合。
在本实施例中，第一平坦化层的厚度 4为 2000nm，第二平坦化层的厚度 d2为 1800nm， 第三平坦化层厚度 4为 500nm， 第四平坦化层 的厚度为 600nm。
相邻两层平坦化层中， 其中一层平坦化层中平坦化单元的中心位于在另一层平坦化 层中平坦化单元的间隙上， 以阻挡水氧的横向穿透，确保所述柔性衬底能在大于所述平坦 化单元的尺度范围内任意尺寸裁切， 可以实现柔性衬底的大规模生产， 简化了工艺步骤， 从而降低了生产成本。 平坦化层中奇数层或偶数层的厚度沿远离所述基片的方向依次递 减， 降低所述柔性衬底的最顶面粗糙度， 以适合器件的制备。
实施例 3
参见图 2， 本实施例的一种柔性衬底结构， 其制备方法同实施例 2， 不同点在于， 第 一平坦化层 203、 第二平坦化层 205、 第三平坦化层 207、 第四平坦化层 209中所述平坦 化单元的排布方式与实施例 1和 2不相同。在实施例 1与 2中，平坦化层单元在第一方向 和第二方向呈周期性排布， 两个方向的夹角为 90 ° 。 而在本实施例中， 如图 5所示， 第 一方向由点划线箭头方向表示，第二方向由虚线箭头方向表示，平坦化单元在第一方向和 第二方向呈周期性排布， 两个方向的夹角为 60 ° 。
第一平坦化层 203和第三平坦化层 207中平坦化单元在 PI基片 201上投影为等半径 圆形。 第一平坦化层 203和第三平坦化层 207在 PI基片 201上的投影重合， 且该投影圆 形的半径为 800 μ πι。 相邻圆形在第一方向和第二方向上的间距均相等， 为 200 μ πι。 第二 平坦化层 205和第四平坦化层 209中平坦化单元在 ΡΙ基片 201上投影也为等半径圆形， 圆形的半径为 500 μ m。第二平坦化层 205和第四平坦化层 209在 PI基片 201上的投影重 合。 在本实施例中， 第一平坦化层的厚度为 ^为？。。。!!!!!， 第二平坦化层 205的厚度 d2为
1800nm, 第三平坦化层的厚度 d3为 500nm， 第四平坦化层的厚度 为 600nm。
相邻平坦化层中， 平坦化单元在 PI基片 201上的投影相差半个周期， 从而相邻两层 平坦化层中，其中一层平坦化层中平坦化单元的中心设置在另一层平坦化层中平坦化单元 的间隙上， 以阻挡水氧的横向穿透，确保柔性衬底能在大于所述平坦化单元的尺度范围内 任意尺寸裁切， 以实现柔性衬底的大规模生产， 简化了工艺步骤， 从而降低了生产成本。 平坦化层中奇数层或偶数层的平坦化层厚度沿远离所述基片的方向依次递减，保证所述柔 性衬底的最顶面粗糙度低， 适合器件的制备。
本发明实施例中， 不限定水氧阻隔层和平坦化层的层数， 可根据柔性基板的具体用 途与需要增加或者减少层数。
作为选择， 平坦化单元可以是任意形状， 同一所述平坦化层中平坦化单元的形状可 以相同或不同，不同平坦化层中平坦化单元的形状亦可以相同或者不同，平坦化层中平坦 化单元在基片上的投影覆盖相邻平坦化层中平坦化单元在基片上的投影间的间隙，且投影 区域部分重叠， 能够保证相邻平坦化层能相互覆盖组成单元之间的缝隙位置， 以阻挡水氧 的横向穿透。如图 3所示，相邻奇数层平坦化层与所述偶数层平坦化层的在所述基片上投 影的相对位置，奇数层或偶数层中所述平坦化单元各自在所述基片上的投影重叠。平坦化 层厚度范围为 100-5000nm，且平坦化单元在基片上的投影在任意方向上的宽度为 10-2000 μ πΐ。 同一平坦化层中相邻平坦化单元的沿第一方向或第二方向的间距为 10-2000 μ πΐ, 平坦化层奇数层或偶数层的厚度均沿远离基片的方向依次递减， 最终使得表面平整。
以上所述实施例仅表达了本发明的几种实施方式， 其描述较为具体和详细， 但并不能 因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说， 在不脱离本发明构思的前提下， 还可以做出若干变形和改进， 这些都属于本发明的保护范 围。 因此， 本发明专利的保护范围应以所附权利要求为准。

Claims

权利 要 求书
1. 一种柔性衬底，包括聚合物基片以及设置在该基片上的多个水氧阻隔层，相邻的所 述水氧阻隔层之间设置有平坦化层， 其特征在于， 所述平坦化层包括多个在第一方向和第 二方向均相互分离的平坦化单元， 所述平坦化层中所述平坦化单元在所述基片上的投影， 覆盖相邻所述平坦化层中相邻所述平坦化单元在所述基片上的投影的间隙， 且投影区域部 分重叠。
2. 根据权利要求 1所述的柔性衬底，其特征在于，所述水氧阻隔层覆盖所述平坦化单 元之间的间隙。
3. 根据权利要求 1所述的柔性衬底，其特征在于，所述平坦化层中奇数层或偶数层的 厚度分别在远离所述基片的方向上依次递减。
4. 根据权利要求 1所述的柔性衬底，其特征在于，所述平坦化层中的所述平坦化单元 在所述第一方向和所述第二方向均呈周期性排布。
5. 根据权利要求 1或 4所述的柔性衬底，其特征在于，相邻所述平坦化层中所述平坦 化单元在所述基片上的投影排布相差半个周期。
6. 根据权利要求 1所述的柔性衬底， 其特征在于， 所述平坦化层的厚度为 100-5000 歷。
7. 根据权利要求 1或 6所述的柔性衬底，其特征在于，所述平坦化单元在所述基片上 的投影在任意方向上的宽度为 10-2000 μ πι。
8. 根据权利要求 1或 6所述的柔性衬底，其特征在于， 同一所述平坦化层中相邻所述 平坦化单元在所述基片上的投影的间距为 10-2000 μ πι。
9. 根据权利要求 1所述的柔性衬底，其特征在于， 同一所述平坦化层中所述平坦化单 元在所述基片上的投影的形状相同。
10.根据权利要求 1或 9所述的柔性衬底，其特征在于， 不同所述平坦化层中所述平坦 化单元在所述基片上的投影的形状相同。
11. 根据权利要求 1所述的柔性衬底，其特征在于，所述平坦化层由喷墨打印-紫外固 化、 闪蒸发 -紫外固化、 化学气相沉积、 气相聚合、 或等离子体聚合制得。
12. 根据权利要求 1或 11所述的柔性衬底，其特征在于，所述平坦化层的材料为聚合 物， 该聚合物选自聚丙烯酸酯、 聚对二甲苯、 聚脲、 聚对苯二甲酸乙二醇酯、 聚萘二甲酸 乙二醇酯、 聚苯乙烯中的至少一种。
13. 根据权利要求 1所述的柔性衬底， 其特征在于， 所述水氧阻隔层的厚度为 20-200 歷。
14. 根据权利要求 1所述的柔性衬底， 其特征在于， 所述水氧阻隔层由磁控溅射、 直 流溅射、 射频溅射、 反应溅射、 等离子体增强化学气相沉积或原子层沉积制得。
15. 根据权利要求 1或 14所述的柔性衬底，其特征在于，所述水氧阻隔层的材料选自 氧化铝、 氧化硅、 氮化硅、 氧化钛、 氧化锆、 氮氧化铝、 氮氧化硅、 非晶碳中的至少一种。
PCT/CN2013/090642 2012-12-28 2013-12-27 一种柔性衬底 WO2014101814A1 (zh)

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