WO2014083728A1

WO2014083728A1 - Sputtering device and substrate treatment device

Info

Publication number: WO2014083728A1
Application number: PCT/JP2013/004975
Authority: WO
Inventors: 繁紀石原; 和也小長; 寛行戸谷; 真太郎須田; 保志安松; 雄藤本; 俊和中澤; 中村　英司; 今井　慎
Original assignee: キヤノンアネルバ株式会社
Priority date: 2012-11-30
Filing date: 2013-08-23
Publication date: 2014-06-05
Also published as: JP2016166426A; CN104822856A; JP5933029B2; CN104822856B; KR20170082654A; US20150262796A1; US10062551B2; DE112013005732T5; TW201435115A; TWI495747B; JP6095829B2; JPWO2014083728A1; KR20150088867A

Abstract

This sputtering device contains the following: a chamber; a substrate holder that can hold a substrate inside said chamber and can rotate about an axis perpendicular to the surface that holds the substrate; first through fourth target holders for holding targets; and a shutter unit. The substrate is conveyed, via a gate valve, between a space inside the chamber and a space outside the chamber. The first through fourth target holders are laid out, on an imaginary circle centered on the abovementioned axis, at the vertices of an imaginary rectangle that has long sides and short sides and is inscribed in said imaginary circle. The first and second target holders are positioned, respectively, at two vertices that define one of the short sides of the imaginary rectangle, and the first and second target holders are closer to the gate valve than the third and fourth target holders are.

Description

Sputtering apparatus and substrate processing apparatus

The present invention relates to a sputtering apparatus and a substrate processing apparatus.

Patent Document 1 describes a configuration in which a plurality of sputtering apparatuses are arranged around a transfer chamber. In each sputtering apparatus, four targets are arranged on the ceiling of the container constituting the film forming chamber. A double-rotation shutter mechanism is disposed between these targets and the substrate holder.

JP 2009-41108 A

In order to form a large number of films with a high throughput for manufacturing a device, it is advantageous to use a substrate processing apparatus in which a plurality of sputtering apparatuses are arranged around a transfer chamber. A plurality of sputtering apparatuses can be arranged around the transfer chamber via gate valves. Here, in order to arrange more sputtering apparatuses around the transfer chamber, the width of the sputtering apparatus in the direction orthogonal to the direction in which the substrate is transferred through the gate valve, particularly the width of the sputtering apparatus on the gate valve side should be reduced. It is.

In the film formation chamber described in FIG. 2 of Patent Document 1, the targets 35, 36, 37, and 38 are arranged at the apexes of a virtual isosceles trapezoid. The distance between the targets 36 and 38 disposed on the gate valve 20 side is smaller than the distance between the targets 35 and 37 disposed on the opposite side of the gate valve 20. Such a configuration is advantageous for arranging a large number of film forming chambers around the transfer chamber.

However, a magnet for generating magnetron discharge is provided on the back side of the target. In general, the magnet is arranged such that one of the N pole and the S pole is directed inward of the film forming chamber and the other magnetic pole is directed outward of the film forming chamber. The magnetic field formed in the film forming chamber by the magnet disposed on the back surface side of the target is affected by the magnet disposed on the back surface side of the adjacent target. In the film forming chamber described in FIG. 2 of Patent Document 1, since the targets 35, 36, 37, and 38 are arranged at the vertices of a virtual isosceles trapezoid, a magnetic field formed on the surface of each target is generated. Can be different. For example, the magnetic field formed on the surface of the target 35 is affected by a magnet for the targets 36, 37, and 38, and the magnetic field formed on the surface of the target 36 is a magnet for the targets 35, 37, and 38. Affected by. Since the relative positions of the targets 36, 37, 38 with respect to the target 35 and the relative positions of the targets 35, 37, 38 with respect to the target 36 are different, the magnetic field formed on the surface of the target 35 and the magnetic field formed on the surface of the target 36 are different. Can be different. Therefore, in the configuration described in FIG. 2 of Patent Document 1, the sputtering characteristics may vary depending on the position where the target to be used is arranged.

The present invention has been made on the basis of recognition of the above problems, and is advantageous, for example, for arrangement around the transfer chamber and for reducing the difference in sputtering characteristics that may occur depending on the position of the target to be used. An object of the present invention is to provide a sputtering apparatus.

According to a first aspect of the present invention, there is provided a chamber, a substrate holder capable of holding a substrate in the chamber, and rotatable about an axis orthogonal to a surface holding the substrate, and a target, respectively. A sputtering apparatus for transporting the substrate between an internal space and an external space of the chamber via a gate valve, wherein the first to fourth target holders are provided. Comprising a shutter unit for selecting a target to be used for sputtering among the four targets respectively held by the first to fourth target holders on one virtual circle centered on the axis, And it is arranged on a vertex of a virtual rectangle having a long side and a short side and inscribed in the virtual circle, and the first target holder and the The two target holders are respectively arranged at two vertices defining one short side of the virtual rectangle, and the distance to the gate valve is a distance from the third target holder and the fourth target holder to the gate valve. Smaller than.

A second aspect of the present invention relates to a substrate processing apparatus, and the substrate processing apparatus includes a transfer chamber having a plurality of connection surfaces, and a sputtering apparatus connected to at least one of the plurality of connection surfaces. The sputtering apparatus is a sputtering apparatus according to the first side surface, and an angle formed by adjacent connection surfaces among the plurality of connection surfaces is greater than 90 degrees.

According to the present invention, for example, there is provided a sputtering apparatus that is advantageous for arrangement around the transfer chamber and that is advantageous for reducing a difference in sputtering characteristics that may occur depending on the position of a target to be used.

The typical top view of the sputtering device of one embodiment of the present invention. The typical sectional view of the sputtering device of one embodiment of the present invention. The figure which shows the structural example of a 1st shutter. The figure which shows the structural example of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The figure which illustrates control of the positional relationship of a target, the opening of a 1st shutter, and the opening of a 2nd shutter. The typical sectional view of the sputtering device of one embodiment of the present invention. 1 is a cross-sectional view of a substrate processing apparatus according to one embodiment of the present invention. The figure for demonstrating the controller with which the substrate processing apparatus of one Embodiment of this invention was equipped.

Hereinafter, the present invention will be described through exemplary embodiments thereof with reference to the accompanying drawings.

1A and 1B are a schematic plan view and a cross-sectional view, respectively, of a sputtering apparatus 100 according to an embodiment of the present invention. The sputtering apparatus 100 includes a chamber 7, a substrate holder 108, and first to

fourth target holders

91, 92, 93, 94. The substrate holder 108 can hold the substrate 109 in the chamber 7 and can rotate about an axis 8 orthogonal to the surface of the substrate 109. The first to

fourth target holders

91, 92, 93, and 94 hold the targets T1, T2, T3, and T4, respectively. Here, the first to

fourth target holders

91, 92, 93, and 94 are clockwise along the virtual circle VC centered on the axis 8, in the first target holder 91, the second target holder 92, and the third target holder. The target holder 93 and the fourth target holder 94 are arranged in this order. The sputtering apparatus 100 is provided with a gate valve 6, and the substrate 109 is transferred between the internal space and the external space of the chamber 7 via the gate valve 6.

The sputtering apparatus 100 also has a shutter for selecting a target to be used for sputtering among the four targets T1, T2, T3, and T4 held by the first to

fourth target holders

91, 92, 93, and 94, respectively. A unit SU is provided. The shutter unit SU can include a first shutter 111 and a second shutter 112 that can rotate about the axis 8 and a drive unit 110 that rotates the first shutter 111 and the second shutter 112 individually.

The first shutter 111 and the second shutter 112 can each have at least one opening. When each of the first shutter 111 and the second shutter 112 has two openings, sputtering (co-sputtering) can be performed using two targets simultaneously.

As illustrated in FIG. 2A, the first shutter 111 may have two openings H1 and H2 whose centers are arranged on one virtual circle VC1 with the axis 8 as the center. As illustrated in FIG. 2B, the second shutter 112 may have two openings H3 and H4 centered on one virtual circle VC2 centered on the axis 8. The driving unit 110 includes the first target T1, T2, T3, and T4, and the target used for sputtering is exposed to the substrate 109 through the opening of the first shutter 111 and the opening of the second shutter 112. The first shutter 111 and the second shutter 112 are driven. The first shutter 111 and the second shutter 112 may be spaced apart from each other in the direction along the axis 8. The first shutter 111 is disposed between the first to

fourth target holders

91, 92, 93, 94 and the second shutter 112.

The center angles having the respective centers of the two openings H1 and H2 of the first shutter 111 as both ends of the arc can be selected from the first to

fourth target holders

91, 92, 93, and 94, respectively. Is equal to the central angle with the center of the arc at both ends of the arc. The center angles having the respective centers of the two openings H3 and H4 of the second shutter 112 as both ends of the arc can be selected from the first to

fourth target holders

91, 92, 93 and 94, respectively. Is equal to the central angle with the center of the arc at both ends of the arc.

In the example shown in FIG. 2A, the center angle αH12 with the centers of the two openings H1 and H2 of the first shutter 111 as both ends of the arc is the center of the second target holder 92 and the third target holder 93. Is equal to the central angle (equivalent to the central angle having the center of each of the first target holder 91 and the fourth target holder 94 as both ends of the arc). In the example shown in FIG. 2B, the center angle αH34 having the respective centers of the two openings H3 and H4 of the second shutter 112 as both ends of the arc is arcs at the respective centers of the second target holder 92 and the third target holder 93. Is equal to the central angle (equivalent to the central angle having the center of each of the first target holder 91 and the fourth target holder 94 as both ends of the arc).

Instead of the example shown in FIG. 2A, the central angles with the centers of the two openings H <b> 1 and H <b> 2 of the first shutter 111 as both ends of the arc are the centers of the first target holder 91 and the second target holder 92, respectively. It may be made equal to the center angle as both ends of the arc (equivalent to the center angle having the respective centers of the third target holder 93 and the fourth target holder 94 as both ends of the arc). Instead of the example shown in FIG. 2B, the central angles having the respective centers of the two openings H3 and H4 of the second shutter 112 as both ends of the arc are the centers of the first target holder 91 and the second target holder 92, respectively. It may be made equal to the center angle as both ends of the arc (equivalent to the center angle having the respective centers of the third target holder 93 and the fourth target holder 94 as both ends of the arc).

A magnet unit 80 is disposed on the back side of each of the

targets

91, 92, 93, 94. Each magnet unit 80 may include a magnet 82 for generating magnetron discharge (for example, DC magnetron discharge) and a drive unit 83 for driving (for example, rotating) the magnet 82. Each magnet unit 80 can also include a distance adjusting unit 84 for adjusting the distance between the magnet 82 and the target holder (target).

Each of the

target holders

91, 92, 93, 94 has targets T 1, T 2, T 3, T 4 in a posture in which the surfaces of the targets T 1, T 2, T 3, T 4 are inclined with respect to the surface of the substrate 109 held by the substrate holder 108. Can be configured to hold. Here, each of the

target holders

91, 92, 93, 94 holds the targets T 1, T 2, T 3, T 4 so that the normals of the surfaces of the targets T 1, T 2, T 3, T 4 are directed toward the center of the substrate 109. sell. In this case, the magnet unit 80 can be disposed so as to be inclined so that the upper portion thereof is away from the shaft 8.

As illustrated in FIG. 9, in order to arrange many sputtering apparatuses 100 around the transfer chamber 300, a direction (hereinafter, referred to as a direction orthogonal to the transfer direction of the substrate 109 between the transfer chamber 300 and the sputtering apparatus 100). The dimensions of the sputtering apparatus 100 in the “width direction” should be reduced. As described above, when the magnet unit 80 is tilted so that the upper part of the magnet unit 80 is away from the shaft 8, the occupation area of the sputtering apparatus 100 can be determined by the upper part of the magnet unit 80. Considering this, in order to reduce the size of the sputtering apparatus 100 in the width direction, the

target holders

91, 92, 93, 94 should be arranged compressed in the width direction.

Therefore, in this embodiment, the first to

fourth target holders

91, 92, 93, 94 (centers thereof) are on one virtual circle VC centered on the axis 8, and the long side LS and the short side SS. And the first target holder 91 and the second target holder 92 (center thereof) are two vertices that define one short side SS of the virtual rectangle VR. And the distance to the gate valve 6 is smaller than the distance from the third target holder 93 and the fourth target holder 94 to the gate valve 6. Here, it is preferable that the first target holder 91 and the second target holder 92 have the same distance to the gate valve 6.

According to the above arrangement, the

target holders

91, 92, 93, and 94 are arranged compressed in the width direction, whereby the dimensions of the sputtering apparatus 100 in the width direction can be reduced. This allows more sputtering apparatus 100 to be placed around the transfer chamber. Further, according to the above arrangement, the magnetic fields formed on the surfaces of the targets T1, T2, T3, T4 respectively held by the first to

fourth target holders

91, 92, 93, 94 are equal to each other. . For example, the influence of the magnetic field formed on the surface of the target T1 held by the target holder 91 from the magnet 82 disposed on the back side of the targets T2, T3, T4 held by the

target holders

92, 93, 94, The magnetic field formed on the surface of the target T2 held by the target holder 92 is equivalent to the influence received from the magnet 82 arranged on the back side of the targets T1, T3, T4 held by the

target holders

91, 93, 94. is there. That is, by arranging the first to

fourth target holders

91, 92, 93, and 94 (centers thereof) at the vertices of the virtual rectangle VR, the magnetic fields formed on the surfaces of the targets T1, T3, and T4 are mutually changed. Can be equal. Thereby, the difference in sputtering characteristics that can occur depending on the position of the target to be used can be reduced.

Hereinafter, the control of the positional relationship between the targets T1, T2, T3, and T4, the openings H1 and H2 of the first shutter 111, and the openings H3 and H4 of the second shutter 112 will be exemplarily described with reference to FIGS. 3A to 7D. To do. In the sputtering apparatus according to the present embodiment, each target is inclined and arranged toward the substrate. However, in order to facilitate the explanation, in FIGS. 3A to 7D, the targets T1, T2, T3, T4, and the first shutter are shown. The openings H1 and H2 of 111 and the openings H3 and H4 of the second shutter 112 are shown in parallel to each other. 7A to 7D are cross-sectional views illustrating the targets T1, T2, T3, and T4, the openings H1 and H2 of the first shutter 111, and the openings H3 and H4 of the second shutter 112 along the virtual circle. The positional relationships exemplified in FIGS. 3A to 7D can be controlled by the controller shown in FIG.

In FIGS. 3A to 7D, the target indicated by shading is a target used for sputtering, and the target indicated by a solid white line or white dotted line is used for sputtering. Not a target. A target indicated by a solid white line is a target at the same position as the opening of the first shutter 111 or the opening of the second shutter 112. A target indicated by a white dotted line is a target at a position different from both the opening of the first shutter 111 and the opening of the second shutter 112.

3A, 3B, and 7A illustrate a state where the target T2 is used for sputtering. 4A, 4B, and 7B illustrate a state where the target T1 is used for sputtering. In the example shown in FIGS. 3A, 3B, and 7A, since the opening H2 of the first shutter 111 faces the target T3 that is not used for sputtering, radiation is emitted from the target T2 that is used for sputtering. The deposited material may adhere to the target T3, which may contaminate the target T3. On the other hand, in the example shown in FIGS. 4A, 4B, and 7B, since the opening H2 of the first shutter 111 does not face the target T3 that is not used for sputtering, the target T2 that is used for sputtering. The material radiated from the surface hardly adheres to the target T3, and the possibility that the target T3 is contaminated is reduced. Here, in the example shown in FIGS. 4A, 4B, and 7B, when only one target T1 is used for sputtering among the four targets T1, T2, T3, and T4, two openings of the first shutter 111 are used. In this example, one of H1 and H2 is controlled so as to face the target T1 and the other opening does not face any of the four targets T1, T2, T3, and T4. Further, in the example shown in FIGS. 4A, 4B, and 7B, the distance between the openings H1 and H2 is larger than the distance between the targets T1 and T2, so that the target T3 is contaminated as compared with the other cases. The possibility of being reduced is reduced.

5A, 5B, and 7C illustrate a state where none of the targets T1, T2, T3, and T4 is used for sputtering. FIG. 6A, FIG. 6B, and FIG. 7D illustrate a state in which the targets T2, T3 among the targets T1, T2, T3, T4 are simultaneously used for sputtering (that is, a state in which co-sputtering is performed). ing.

Hereinafter, an example relating to the structure of the sputtering apparatus 100 will be exemplarily described with reference to FIG. 8, but the technical scope of the present invention is not limited by the example. In one embodiment, the distance R1 between the center of each of the targets T1, T2, T3, T4 and the axis 8 is 240 mm, and the distance between the center of each of the targets T1, T2, T3, T4 and the surface of the substrate 109. (Distance along the axis 8) Wd is 250 mm, the angle α between the normal from the center of each of the targets T1, T2, T3, and T4 and the axis 8 is 35 degrees, and the diameter Dw of the substrate 109 is 300 mm. In this example, σ (standard deviation) in the thickness distribution of the film formed on the substrate 109 by sputtering was 2% or less.

FIG. 9 illustrates a substrate processing apparatus in which one or a plurality of sputtering apparatuses 100 are arranged around the transfer chamber 300. The transfer chamber 300 has a plurality of connection surfaces 301. The sputtering apparatus 100 is connected to at least one of the plurality of connection surfaces 301. The transfer chamber 300 and the sputtering apparatus 100 are connected via the gate valve 6. The angle A formed by the connection surfaces 301 adjacent to each other among the plurality of connection surfaces 301 is preferably larger than 90 degrees, so that more sputtering apparatuses 100 can be arranged around the transfer chamber 300.

FIG. 10 is a diagram illustrating a configuration of the controller 300 according to the present embodiment. The controller 400 includes an input unit 400b, a storage unit 400c having a program and data, a processor 400d, and an output unit 400e, and can control the sputtering apparatus 100 according to the present embodiment. The controller 400 can control the operation of the sputtering apparatus 100 by the processor 400d reading and executing the control program stored in the storage unit 400c. That is, under the control of the controller 400, the drive unit 110 can be operated to perform the operations of the first shutter 111 and the second shutter 112 shown in FIGS. 3A to 7D. Note that the controller 400 may be provided separately from the sputtering apparatus 100 or may be built in the sputtering apparatus 100. Furthermore, the controller 400 is connected to a power source that controls the power applied to the targets T1, T2, T3, T4 (ie, the power applied to the

target holders

91, 92, 93, 94), and the power to each target. The drive unit 110 can be controlled in conjunction with the supply.

This application claims priority on the basis of Japanese Patent Application No. 2012-263648 filed on November 30, 2012, the entire contents of which are incorporated herein by reference.

Claims

A chamber, a substrate holder capable of holding a substrate in the chamber and rotatable about an axis orthogonal to a surface holding the substrate, and first to fourth target holders for holding targets, respectively A sputtering apparatus in which the substrate is transported between an internal space and an external space of the chamber via a gate valve,
A shutter unit for selecting a target to be used for sputtering out of the four targets respectively held by the first to fourth target holders;
The first to fourth target holders are arranged on one virtual circle centered on the axis and on the vertex of a virtual rectangle having a long side and a short side and inscribed in the virtual circle, The one target holder and the second target holder are respectively arranged at two vertices defining one short side of the virtual rectangle, and the distance to the gate valve is from the third target holder and the fourth target holder. Smaller than the distance to the gate valve,
A sputtering apparatus characterized by that.
Each of the first to fourth target holders holds the target in a posture in which the surface of the target is inclined with respect to the surface of the substrate held by the substrate holder.
The sputtering apparatus according to claim 1.
The first target holder and the second target holder have the same distance to the gate valve,
The sputtering apparatus according to claim 1 or 2.
The first to fourth target holders are arranged in the order of the first target holder, the second target holder, the third target holder, and the fourth target holder along the virtual circle.
The shutter unit includes a first shutter and a second shutter that are rotatable about the axis,
The first shutter and the second shutter are spaced apart from each other in a direction along the axis;
The first shutter has two openings arranged on one virtual circle centered on the axis, and the second shutter is arranged on one virtual circle centered on the axis. Has two openings,
The central angle having the respective centers of the two openings of the first shutter as the ends of the arc is the center of each of the adjacent target holders that can be selected from the first to fourth target holders as the ends of the arc. The center angle is equal to the center angle and the center of each of the two openings of the second shutter is the opposite ends of the arc. The center angle of each of the adjacent target holders can be selected from the first to fourth target holders. Equal to the central angle of both ends of the arc,
The sputtering apparatus according to any one of claims 1 to 3.
The center angle having the respective centers of the two openings of the first shutter as the ends of the arc is equal to the center angle having the centers of the second target holder and the third target holder as the ends of the arc, The center angle having the respective centers of the two openings of the second shutter as the ends of the arc is equal to the center angle having the centers of the second target holder and the third target holder as the ends of the arc.
The sputtering apparatus according to claim 4.
The center angle having the respective centers of the two openings of the first shutter as the ends of the arc is equal to the center angle having the centers of the first target holder and the second target holder as the ends of the arc, The center angle having the respective centers of the two openings of the second shutter as both ends of the arc is equal to the center angle having the respective centers of the first target holder and the second target holder as both ends of the arc.
The sputtering apparatus according to claim 4.
The first shutter is disposed between the first to fourth target holders and the second shutter,
When only one target among the four targets held by the first to fourth target holders is used for sputtering, the first shutter is one of the two openings of the first shutter. One is opposed to the one target and the other opening is controlled not to face any of the four targets.
The sputtering apparatus according to any one of claims 4 to 6, wherein:
A transfer chamber having a plurality of connection surfaces;
A sputtering apparatus connected to at least one of the plurality of connection surfaces,
The sputtering apparatus is the sputtering apparatus according to any one of claims 1 to 7,
An angle formed by adjacent connection surfaces among the plurality of connection surfaces is greater than 90 degrees,
A substrate processing apparatus.