JP2009041108A - Sputtering system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering film deposition system where the generation of cross contamination between targets caused by target materials or the like stuck to a shutter plate can be prevented. <P>SOLUTION: The sputtering system is constituted so that first and second targets composed of mutually different materials are placed in a chamber, a shutter plate composed of a passing part passing through sputtered particles and a blocking part blocking sputtered particles is used, and the rotary angle of the shutter plate is controlled in such a manner that the sputtered particles from the second target are blocked at a position different from the part at which the sputtered particles from the first target have been blocked. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a multi-source sputtering film forming apparatus, and more particularly to a multi-source sputtering film forming apparatus that includes a plurality of targets of different materials in a single chamber and that uses a double-rotating shutter mechanism to form a multilayer film by sputtering. The present invention relates to a sputtering apparatus according to a double shutter control method suitable for preventing contamination.

  The present applicant has previously proposed a magnetic multilayer film manufacturing apparatus (Patent Document 1 and Patent Document 2). Patent Document 2 is a publication of a US application based on the Japanese application related to Patent Document 1. In this magnetic multilayer film manufacturing apparatus, the required multilayer film is interrupted from the bottom layer to the top layer on the substrate in one deposition chamber in the production of a magnetic head, MRAM, or the like composed of a GMR element or a TMR element. Sputtering can be continuously performed without any problem, and a large number of magnetic films can be deposited at one time.

  In order to perform sputter deposition of the multilayer film as described above, in the deposition apparatus, for example, five different targets in one material are placed in the chamber ceiling, that is, above the substrate to be deposited. A shutter mechanism is provided for selecting a target to be disposed in the space and used for sputtering film formation. This shutter mechanism has a double shutter structure that rotates independently, and each of the two shutter plates has a required number of holes for viewing a selected target when viewed from the substrate side. Is formed. In the double-rotation shutter mechanism, a target made of a material not to be deposited is shielded, and a target to be sputter deposited appears on the substrate through the hole. In the double rotation shutter mechanism, two shutter plates, which are arranged in parallel and substantially circular when viewed from the substrate, are independently rotated to select the coincidence / mismatch of the positions of the holes in each shutter plate. The target of the material to be deposited is made to face the substrate through the hole and is used to select a target to be used for sputter deposition.

  The multilayer film manufacturing apparatus is a multi-source sputtering film forming apparatus that includes a plurality of targets made of different materials in one sputter film forming chamber and sequentially deposits films of different materials on a substrate to form a multilayer film. . In this multi-source sputtering film forming apparatus, as described above, a target to be sputtered is selected while properly shielding five targets of different materials in one sputter film forming chamber with a double rotation shutter mechanism. Sputter film formation processing is performed in accordance with the set film formation order.

  When a plurality of targets made of different materials are selected by the double-rotation shutter mechanism and sputter deposition is performed in a specific order, there is a possibility that cross contamination occurs between the targets.

  For example, in the above sputter deposition, the target to be sputter deposited is in a “pre-sputter” state in which a discharge is generated in a state of being covered with a shutter mechanism to start the sputtering state, and the shutter mechanism is completely opened. Thus, there is a “main sputtering” state in which sputtering film formation is performed on the substrate. At this time, (1) the foreign material deposited on the surface of the shutter plate facing the target adheres to the target surface by the sputtering action during pre-sputtering, and (2) the foreign material attached to the target surface during the main sputtering sputters onto the substrate. Or (3) The above-mentioned cross-contamination occurs when sputtered atoms bounced off the substrate during the main sputtering adhere to another target surface. In order to shift from the pre-sputtering to the main sputtering, when the pre-sputtering shutter is rotated to shift to the main sputtering, if the passage of the different kinds of substances is caused during the rotation of the shutter plate, the contamination described in (1). Nation occurs and becomes a significant problem.

  In order to deposit a multilayer film with good film performance on a substrate, it is essential to prevent the above-mentioned various types of cross contamination.

  By the way, according to the configuration disclosed in Patent Document 2, FIGS. 5A and 5B further illustrate one operation method in the double rotation shutter mechanism. In alignment of the first shutter plate on the target side and the second shutter plate on the substrate side, in the initial state, the hole of the second shutter plate is aligned with the target to be sputtered, and the shutter 1 is deposited. Pre-sputtering is started by aligning the hole at a position deviated from the target to be attempted. The pre-sputtering is sputtering for removing surface contaminants such as oxide on the surface of the target. Next, the first shutter plate is rotated to align the hole with the hole of the second shutter plate, the target to be deposited is exposed to the substrate, and the main sputtering is performed on the substrate. This sputtering is the original sputtering for film formation. In this way, when performing the main sputtering, only the target to be deposited is exposed to the substrate only during the main sputtering, thereby preventing the mixing of other target materials, thereby preventing cross contamination. The operation of the double rotation shutter mechanism to prevent is shown.

  However, as described above, the occurrence of cross-contamination is a complicated phenomenon depending on the situation such as the number of targets and the number of holes, and various cross-contamination occurs. Further, in the method of rotating the shutter plate of Patent Document 2, there is no discussion at all about the handling of the target material on the shutter plate at the time of pre-sputtering. As described above, the operation method of the double rotary shutter mechanism disclosed in Patent Document 2 cannot sufficiently cope with the possible cross contamination.

Japanese Patent Application Laid-Open No. 2002-167661 (Japanese Patent Application No. 2000-365696) US Patent Application Publication 2002/0064595

  An object of the present invention is to form a multilayer film on a substrate with a plurality of targets made of different materials in a single sputter film formation chamber, and to form a target at the time of film formation on the film formation space side of the plurality of targets. In a multi-source sputtering film forming apparatus equipped with a double rotation shutter mechanism for selecting a target, the target material adhering to the double shutter is prevented from contaminating other targets according to the film forming sequence of the multilayer film. It is intended to optimally control the order of the shielding operation of the shutter plate.

  In view of the above problems, an object of the present invention is a multi-source sputtering film forming apparatus in which a plurality of targets are provided in one chamber, a multilayer film is formed by sputtering, and a target is selected by a double rotation shutter mechanism. Accordingly, it is an object of the present invention to provide a sputtering apparatus for carrying out a double shutter control method of a multi-source sputtering film forming apparatus that can prevent cross contamination between targets due to a target material or the like adhering to a shutter plate. .

The first aspect of the present invention is a film forming chamber for sputtering,
A substrate holder for placing the substrate, located in the sputtering film forming chamber;
A target placement means for placing a first target and a second target made of a material different from the first target, located in the sputtering deposition chamber; and
A shutter mechanism located in the sputtering film forming chamber, comprising: a shutter plate comprising a passage portion through which sputtered particles pass during sputtering and a blocking portion through which the sputtered particles are blocked; and a rotation for rotating the shutter plate. A shutter mechanism having a driving means;
The shutter mechanism further includes:
At the time of sputtering, the shutter plate was rotated so that the sputtered particles from the first target were blocked at the blocking location of the shutter plate and deposited on the blocking location. Thereafter, the sputter particles from the first target pass through the shutter plate through the passage portion toward the substrate, and the sputter particles from the second target are on a cut-off portion different from the cut-off portion. Sputtering characterized by having control means for controlling the rotation angle of the rotation drive means so that the shutter plate rotates in order to position the passage location and blocking location of the shutter plate at the deposition position. Device.

The second aspect of the present invention is a film forming chamber for sputtering,
A substrate holder for placing the substrate, located in the sputtering film forming chamber;
A target placement means for placing a first target and a second target made of a material different from the first target, located in the sputtering deposition chamber; and
A shutter mechanism located in the sputtering film forming chamber, having a first and a second shutter plate having a passage location for passing sputtered particles during sputtering and a blocking location for blocking the sputtered particles. A shutter mechanism, and a shutter mechanism having a rotation driving means for independently rotating the first shutter plate and the second shutter plate;
The shutter mechanism further includes:
The first shutter plate is disposed at a position where sputter particles from the first target are blocked at the blocking position of the first shutter plate and deposited on the blocking position during sputtering. The sputtered particles from the first target pass through the first and second shutter plates through the passage locations toward the substrate to position the passage locations. After the second shutter plate is rotated, the passage of the first shutter plate and the blocking of the second shutter plate are at positions where the sputtered particles from the second target are deposited on the blocking portion of the second shutter plate. Sputtering apparatus comprising control means for controlling the rotation angle of the rotation driving means so that the first and second shutter plates rotate to position the portion. A.

  In order to achieve the above object, the double shutter control method according to the sputtering apparatus of the present invention is configured as follows.

  Double shutter control method according to the first aspect of the present invention: This double shutter control method comprises at least three targets provided in a single chamber, and is disposed with respect to these targets and independently rotated. In a multi-source sputtering film forming apparatus comprising a double-rotation shutter mechanism having first and second shutter plates with holes formed in predetermined positions, at least three combinations of holes of the first shutter plate and the second shutter plate The target of the sputter film formation is selected from the targets, and the discharge of the selected target is continued and the pre-sputtering process and the main sputtering process are performed to deposit the film on the substrate. This is a shutter control method. In this double shutter control method, the target selected in the pre-sputtering process is covered with the first shutter plate and can be exposed to the substrate with the second shutter plate, and the target selected in the sputtering process is used as the first shutter plate. When the first shutter plate is rotated so that it can be exposed to the substrate, and the pre-sputtering process is performed, the adhering matter at the opposite position of the first shutter plate covering the selected target is selected. The rotation operation of the first shutter plate is controlled so that the same material as the target material is obtained and the position of the first shutter for pre-sputtering is located adjacent to the hole of the shutter plate.

  In the above-described double shutter control method, a specific target or other target selected as a sputtering film formation target during pre-sputtering is covered with a first shutter plate, and the first shutter plate is rotated during main sputtering. The selected target is exposed to the substrate side through the hole. For the pre-sputtering and main sputtering operations of the first shutter plate close to the target, each target material adheres to the target side surface of the first shutter plate during pre-sputtering discharge. In addition, when shifting from pre-sputtering to main sputtering, the rotation operation of the first shutter plate is controlled so that there is no place where the material of another target is deposited before the selected target. Thus, it is possible to prevent other target materials from adhering to the surface of the target to be sputtered during pre-sputtering, and to prevent occurrence of cross-contamination during main sputtering.

  The second double shutter control method preferably includes the first shutter plate and the first shutter plate so that a portion of the first shutter plate to which a substance different from the selected target is attached does not face during the selected target discharge. The second shutter plate is controlled to rotate. When the first shutter plate rotates during a discharge in a pre-sputtering process or the like, the cross-contamination is performed unless the other target material attached to the first shutter plate passes the position of the target surface selected as the target for sputtering film formation. Nation can be avoided. In order to shift from the pre-sputtering to the main sputtering, when the pre-sputtering shutter is rotated to shift to the main sputtering, if the passage of the different kinds of substances is caused during the rotation of the shutter plate, the contamination described in (1). Nation occurs and becomes a significant problem.

  The third double shutter control method is preferably characterized in that only the selected target is exposed through the holes of the first and second shutter plates when viewed from the substrate during the main sputtering. When the main sputtering is performed, the selected target is sputtered, and the sputtered target material particles move toward the substrate through the holes of the first shutter plate and the second shutter plate, and are deposited on the surface of the substrate. Will do.

  The fourth double shutter control method is preferably characterized by exposing one selected target in the case of single sputtering. In the case of single sputtering, since only the material given by one target is deposited on the substrate, one target selected as viewed from the substrate side is viewed through the holes of the first and second shutter plates.

  The fifth double shutter control method is preferably characterized by exposing at least two selected targets in the case of CO-sputtering. In the case of CO-sputtering, a film is deposited on the substrate by simultaneously sputtering two types of targets having different materials, so that at least two targets selected from the substrate side are the first and first targets. Through the holes in the shutter plate 2.

  The sixth double shutter control method is preferably characterized in that when the number of targets is an even number (n: n> 3), the number of holes in the first shutter plate is n / 2. It is done.

  In the seventh double shutter control method, preferably, when the number of targets is an odd number (n: n ≧ 3), the number of holes in the first shutter plate is (n / 2) +1. It is characterized by.

  According to another aspect of the present invention, there is provided an eighth double shutter control method according to the present invention, wherein five different types of targets provided in the chamber are provided for the five targets, rotate independently, and each has two A multi-source sputtering film forming apparatus comprising a double-rotation shutter mechanism having first and second shutter plates in which holes are formed. Sputtering is performed from five targets by combining holes in the first shutter plate and the second shutter plate. Two or one target to be filmed is appropriately selected, and discharge is continued with respect to the selected target, and a pre-sputtering process and a main sputtering process are performed to deposit a film on the substrate to perform CO-sputtering or single sputtering. In the above-mentioned CO-sputtering and single sputtering, film adhesion on the first and second shutter plates by the pre-sputtering process Flip point to the same target substance to operate the first and second shutter plate so as to deposit, thereby a double shutter control method of CO- sputtering and a single sputtering performed in a single chamber apparatus.

  In the above-described double shutter control method, the same position on the first shutter plate and the second shutter plate is the same in one sputter deposition chamber during the CO-sputter presputter process and the single sputter presputter process. It is possible to perform deposits of CO-sputtering and single-sputtering without causing cross-contamination, so that deposits due to substances adhere.

  The ninth double shutter control method is preferably characterized in that each operation of the first and second shutter plates is controlled so that CO-sputtering is given priority among the above-mentioned CO-sputtering and single sputtering. It is attached.

  The tenth double shutter control method is preferably characterized in that CO-sputtering is performed first and then single sputtering is performed thereafter.

  The eleventh double shutter control method is preferably characterized in that only the selected target is exposed through the holes of the first and second shutter plates when viewed from the substrate during the main sputtering.

  According to the present invention, in the double shutter control method capable of independently rotating in the double rotation shutter mechanism for the plurality of targets arranged in one chamber of the multi-source sputtering film forming apparatus, the first shutter plate close to the target is used. In the pre-sputtering and main-sputtering rotating operations, each target material adheres to the target side surface of the first shutter plate during pre-sputtering discharge, but the pre-sputtering discharge state is maintained during discharge. Thus, when shifting from pre-sputtering to main sputtering, the rotation operation of the first shutter plate is controlled so that there is no place where the material of another target is deposited before the target selected as the sputtering target. The movement of the second shutter plate is switched so that it does not pass over different kinds of deposits during the transition from pre-sputtering to main sputtering. As such, rotation of the shutter plate is controlled, thereby prevents another target material on the surface of the target during the pre-sputtering is attached, it is possible to prevent the cross-contamination occurs during the sputtering.

  Further, according to the present invention, there are provided a first shutter plate and a second shutter plate having five targets in one sputter deposition chamber and two holes each having a predetermined angle, and these are independently rotated appropriately. In a sputtering film forming apparatus provided with a double rotation shutter mechanism whose operation is controlled, CO-sputtering and single sputtering can be performed by an appropriate procedure with this one common apparatus configuration.

  DESCRIPTION OF EMBODIMENTS Preferred embodiments (examples) of the present invention will be described below with reference to the accompanying drawings.

  First, an embodiment of a multi-source sputtering film forming apparatus to which a double shutter control method according to the present invention is applied will be described with reference to FIG. This multi-source sputtering film forming apparatus is an apparatus for producing a multilayer film by sputtering. In this example, the multilayer film is an example of a magnetic multilayer film. FIG. 1 is a plan view shown to such an extent that the schematic configuration of the internal mechanism of the magnetic multilayer film manufacturing apparatus can be understood. The magnetic multilayer film manufacturing apparatus 10 is of a cluster type and includes a plurality of film forming chambers. A transfer chamber 12 provided with a robot transfer device 11 is installed at a central position. The robot transport device 11 includes an extendable arm 13 and a hand 14 for mounting a substrate. The base end portion of the arm 13 is rotatably attached to the central portion 12 a of the transfer chamber 12.

  The transfer chamber 12 of the magnetic multilayer film manufacturing apparatus 10 is provided with load / unload chambers 15 and 16. The load / unload chamber 15 carries the substrate to be processed from the outside into the magnetic multilayer film production apparatus 10 and also carries the substrate on which the magnetic multilayer film has been formed from the magnetic multilayer film production apparatus 10 to the outside. The load / unload chamber 16 has the same function, and the substrate loaded via the load / unload chamber 16 is unloaded from the chamber. The reason for providing two load / unload chambers is to increase productivity by using the two chambers alternately.

  In this magnetic multilayer film manufacturing apparatus 10, three film forming chambers 17 A, 17 B, and 17 C, one oxide film forming chamber 18, and one cleaning chamber 19 are provided around the transfer chamber 12. Between the two chambers, there is provided a gate valve 20 that isolates both chambers and can be opened and closed as necessary. Each chamber is provided with an evacuation mechanism, a source gas introduction mechanism, a power supply mechanism, etc., but these are not shown.

  Each of the film forming chambers 17A, 17B, and 17C is a film forming chamber for continuously forming a plurality of magnetic films belonging to a group in the same chamber. According to this embodiment, the magnetic multilayer film deposited on the substrate is divided into, for example, three groups A, B, and C from the lower side, and a plurality of magnetic films for each group are deposited in one common film forming chamber. It is configured to make it. Thus, a cluster type magnetic multilayer film manufacturing apparatus is realized. In each of the film forming chambers 17A, 17B, and 17C, which are grouped by A, B, and C and deposit a plurality of magnetic films belonging to each group, the magnetic films are deposited by PVD (Physical Vapor Deposition) using sputtering.

  In the film forming chamber 17A for forming the magnetic films belonging to the group A, for example, each of the four kinds of magnetic films is continuously deposited in a predetermined order. For this reason, in the film forming chamber 17A, four targets 23 to 26 corresponding to each of the four types of magnetic materials are attached to the ceiling portion with respect to the substrate 22 disposed on the substrate holder 21 at the bottom center. Yes. In FIG. 1, an evacuation mechanism for bringing the inside of the film forming chamber 17A into a required vacuum state, a mechanism for supplying power required for sputtering of the targets 23 to 26, a mechanism for generating plasma, and the like are illustrated. This is omitted, and this also applies to other film forming chambers and the like.

  Also in the film forming chamber 17B for forming the magnetic film belonging to the group B, each of a plurality of different types of magnetic films is continuously deposited in a predetermined order, and is disposed on the substrate holder 27 at the bottom center in the same manner as described above. Further, targets 29 to 32 corresponding to various magnetic materials are attached to the ceiling portion of the substrate 28.

  Also in the film forming chamber 17C for forming the magnetic film belonging to the group C, each of a plurality of different types of magnetic films is continuously deposited in a predetermined order, and is arranged on the substrate holder 33 at the bottom center in the same manner as described above. The targets 35 to 38 corresponding to the various magnetic materials are attached to the ceiling portion of the substrate 34.

  In the oxide film forming chamber 18, a surface chemical reaction for oxidizing the metal layer is performed. In the oxide film forming chamber 18, 39 is a substrate holder, and 40 is a substrate.

  In the cleaning chamber 19, an ion beam etching mechanism and an RF sputter etching mechanism are provided, and surface flattening is performed. In the cleaning chamber 19, 41 is a substrate holder, and 42 is a substrate.

  In the magnetic multilayer film manufacturing apparatus 10 having the above-described configuration, the substrate 43 carried inside through the load / unload chamber 15 is transferred to the film forming chambers 17A, 17B, and 17C, the oxide film forming chamber 18 by the robot transfer device 11. Each of the cleaning chambers 19 is introduced in a predetermined order according to the magnetic multilayer device to be manufactured, and predetermined processing such as film formation and etching is performed in each chamber.

  Next, a characteristic structure provided in each of the film forming chambers 17A to 17C will be described in more detail with reference to FIG. 2A is a plan view of a film forming chamber 17C as an example, and FIG. 2B is a longitudinal sectional view showing a characteristic structure. In FIG. 2, elements that are substantially the same as those described in FIG.

  As described above, the four targets 35 to 38 are provided on the ceiling 52 of the container 51 of the film forming chamber 17C. These targets 35 to 38 are attached in an inclined state at the ceiling portion 52. In this illustrated example, the target itself is shown as 35 to 38 for convenience of explanation, but the actual target is accommodated in a target housing having an opening on the surface facing the substrate side.

  A substrate holder 33 that is rotatably provided at the center of the bottom surface of the film forming chamber 17C carries a substrate 34 in a horizontal state. At the time of sputtering film formation on the substrate 34, the substrate 34 is in a rotating state. A ring-shaped magnet 53 is installed around the substrate 34 on the substrate holder 33. The targets 35 to 38 provided in an inclined manner are each arranged in such a posture as to face the upper surface of the substrate 34 arranged horizontally below. A double-rotation shutter mechanism 54 is disposed between these targets and the substrate 34. The double-rotation shutter mechanism 54 has a single shutter plate that rotates independently in a double structure. By the operation of the shutter mechanism 54, a target to be used for sputtering film formation is selected from the four targets 35 to 38. With such a configuration, oblique incidence of the sputtered target material is realized, a highly uniform film thickness distribution is achieved in the multilayer film formation, and contamination between the targets and between the magnetic films are prevented from occurring.

  The structure and operation of the double rotation shutter mechanism 54 will be conceptually described in more detail with reference to FIG. In this figure, the four targets 35 to 38 are shown in a state of being arranged in parallel for simplicity of explanation. The double-rotation shutter mechanism 54 is provided so that the two shutter plates 61 and 62 are arranged substantially in parallel, and each of the shutter plates 61 and 62 can be freely rotated around the shaft 63 individually. In FIG. 2B, the targets 35 to 38 and the shutter plate of the double-rotation shutter mechanism 54 are arranged in an inclined posture, but they are in parallel with each other. Is shown.

  In the double rotation shutter mechanism 54, the shutter plate 61 is a target side shutter plate (first shutter plate), and the shutter plate 62 is a substrate side shutter plate (second shutter plate). The shutter plate 61 is formed with, for example, two holes 61a and 61b arranged in the diameter direction, and the shutter plate 62 is formed with one hole 62a, for example. The number and position of the holes are examples, and are not limited to those as described later.

  In the state shown in FIG. 3, the sputter film formation using the target 38 is performed by overlapping the positions of the hole 61 a of the shutter plate 61 and the hole 62 a of the shutter plate 62 with respect to the target 38, and the rotating substrate 34. A predetermined magnetic film is deposited on the surface. At this time, the targets 36 and 37 are covered with the two shutter plates 61 and 62 to prevent the sputtered target material from adhering. Further, the target 35 faces the hole 61b in the shutter plate 61, but is similarly protected because it is covered by the shutter plate 62. As described above, according to the shutter plates 61 and 62 of the double-rotation shutter mechanism 54, when viewing the direction of the target from the substrate 34, only one target is exposed at the time of sputtering film formation on the substrate. Since the target not to be covered is covered with the shutter plate, in this sense, basic cross-contamination prevention between the targets can be achieved.

  In the above-described multi-source sputtering film forming apparatus described with reference to FIGS. 1 to 3, the example in which four targets are provided in each of the film forming chambers 17 </ b> A to 17 </ b> C has been described, but the number of targets provided in one film forming chamber is four. For example, the number may be five or three. When there are five targets, the number of the holes formed in the shutter plates 61 and 62 of the double rotation shutter mechanism 54 is also appropriately selected according to the film forming conditions. For example, two holes are formed in the two shutter plates 61 and 62.

  In the above-described multi-source sputtering film forming apparatus, each layer of the multilayer film deposited on the substrate 34 is a single sputtering that forms a film of a single target material with a single target. However, for the deposited film, for example, by using shutter plates 61 and 62 each having two holes, sputtering is performed by mixing different target materials using two types of targets (“CO -"Sputtering").

  Next, an embodiment of the double shutter control method implemented in the multi-source sputtering film forming apparatus will be described in detail. In the following description of the embodiment of the double shutter control method, the number and symbols of the targets will be described as appropriate apart from the configuration of the multi-source sputtering film forming apparatus described above.

  This double shutter control method is intended to prevent cross-contamination that occurs under complicated relations such as pre-sputtering and main-sputtering in addition to the basic cross-contamination preventing function described above. In this double shutter control method, the target to be used is selected according to the order of forming the multilayer films to be formed on the substrate 34 with respect to how to move the two shutter plates 61 and 62 of the double rotary shutter mechanism 54 described above. In order to prevent cross-contamination that sputters one target contaminates other targets in relation to the occurrence of the pre-sputter discharge state and the main-sputter discharge state. This is a control method.

  As shown in FIG. 4, the above-described double shutter control method is implemented by controlling the rotation operations of the shutter plates 61 and 62 of the double rotation shutter mechanism 54 independently by the controller 71. The double rotation shutter mechanism 54 includes driving units 72 and 73 that drive the two shutter plates 61 and 62, respectively. The controller 71 individually controls the operations of the drive units 72 and 73. The rotating shafts 74 and 75 of the shutter plates 61 and 62 are formed in a coaxial structure, for example.

  Here, with reference to FIG. 5, the phenomenon of cross contamination to be prevented by the double shutter control method according to the present invention will be described in detail from the viewpoint of the adhesion phenomenon of the target material to the shutter plates 61 and 62. FIG. In FIG. 5, (A) shows the time of pre-sputtering, and (B) shows the time of main sputtering. In FIG. 5, 81 is a target used for sputtering film formation, and 82 is another target not sputtered at an adjacent position. At the time of pre-sputtering, the hole 81 a of the shutter plate 62 is made to coincide with the target 81, and the target 81 is covered with the shutter plate 61. In this state, discharge is generated and pre-sputtering is performed. It should be noted that power is not turned on to a target that is not sputtered, and no discharge is caused. In this example, two holes 61 a and 61 b are formed in the shutter plate 61, and two holes 62 a and 62 b are also formed in the shutter plate 62.

  In the operation of the above-mentioned double-rotation shutter mechanism 54 by conventional multi-source sputtering film formation, during pre-sputtering (A), for example, in the previous stage sputtering operation, another target is placed on the surface of the shutter plate 61 facing the target 81. Since the state in which the substance 91 is adhered (shutter deposit) is generated, the target substance 91 is sputtered by the discharge during pre-sputtering and adheres to the surface of the target 81. Therefore, during the main sputtering (B), another target material 91 adhering to the surface of the target 81 adheres to the surface of the substrate 34, and cross contamination occurs. In (A), the shutter 61 is stationary due to pre-sputtering, but the same thing occurs when the shutter 61 is rotated when moving from (A) to (B). That is, since the target 81 is continuously discharged from pre-sputtering to main sputtering, if the target 81 passes over another material while the shutter 62 is rotating, the same phenomenon as the above-described cross contamination occurs. Furthermore, another target material 91 and material 81 adhering to the substrate 34 may adhere to the adjacent target 82 through the opening 92, for example. In this way, other cross-contamination occurs. Reference numeral 93 denotes a shutter deposit on another target.

  The double shutter control method according to the present invention is for preventing the above-mentioned cross contamination from occurring, and will be described in detail in the following embodiments.

  The basic idea of the double shutter control method of the present invention is as follows. First, a certain target (for example, when the target 81 is to be sputter-deposited, the target of the shutter plate in the pre-sputtering immediately before the main sputtering is determined. Cover the area where the same target material is deposited (or the area where another different target material adheres does not come to the position of the opposing surface during the shutter rotation operation), and secondly, use a deposition plate Then, the adhesion of the target material on the peripheral edge of the hole of the shutter plate is eliminated, so that even if the shutter adhering material on the opposing surface of the shutter plate on the target side is sputtered during pre-sputtering, Alternatively, even if the target to be deposited is sputtered during this sputtering, the same type of material is used, so the film deposited on the substrate is of high quality. It is maintained.

  A basic configuration of the double shutter control method according to the present invention will be described with reference to FIGS.

  First, with reference to FIG. 6, the adhesion phenomenon of the target material to the shutter plates 61 and 62 based on the double shutter control method according to the present invention will be described. 6A shows the pre-sputtering time, and FIG. 6B shows the main sputtering time. In FIG. 6, reference numeral 81 denotes a target used for sputtering film formation. In this multi-source sputtering film forming apparatus, a deposition preventing plate 94 is disposed near the target surface of the target 81. The adhesion preventing plate 94 is a member in which a hole 94a is formed, shields the space around the target 81, and exposes the target sputtering surface to the substrate side through the hole 94a. At the time of pre-sputtering, the hole 81 a of the shutter plate 62 is aligned with the target 81 and the target 81 is covered with the shutter plate 61. Pre-sputtering is performed in this state. A substance 81 </ b> A of the target 81 is attached to the opposing surface of the shutter plate 61 based on a control method described later. Even if the target 81 is pre-sputtered, the same target material is adhered to the front facing surface, so that no contamination occurs. Further, at the time of the main sputtering, as shown in FIG. 6B, the hole 61 a of the shutter plate 61 coincides with the target 81, and the substance 81 A due to the target 81 adheres to the surface of the substrate 34. Also in this case, since the surface of the target 81 is not contaminated during pre-sputtering, the above-described cross contamination does not occur. In FIG. 6, since the deposition preventing plate 94 is provided, it is possible to prevent target deposits from being deposited on the peripheral edge 61a-1 of the hole 61a.

  Next, with reference to FIG. 7, the same situation as that described with reference to FIG. 5 in the case of sputtering film formation according to the present invention will be described. In FIG. 7, elements that are substantially the same as the elements described in FIG. The difference between the case of FIG. 7 and the case of FIG. 5 is that when the target 81 is formed by sputtering to form a film of the material by the target 81 on the substrate 34, each of the targets 81 and 82 is pre-sputtered. The same material 81a, 82a is deposited on the opposite surface location, or only the location where the same material is deposited is allowed to pass. Further, the target deposit does not accumulate at the peripheral edge 61a-1 of the hole 61a. Further, the stationary position of the shutter plate 62 is different, and in the case of FIG. 5, the hole 62a is made to coincide with the target 81 and the target 82 is made to coincide with the target 82 at the time of pre-sputtering. The holes 62b are matched and the target 82 is covered. Therefore, according to the case of the sputter film formation according to the present invention shown in FIG. 7, it is possible to reliably prevent the occurrence of the cross contamination described in FIG.

  In the case of performing the cross contamination prevention described with reference to FIGS. 6 and 7 in the sputtering film formation using the double rotation shutter mechanism 54, the important point is particularly in the sputtering film formation of the target 81, immediately before the main sputtering. That is, the same target material as that of the target 81 is deposited on the target facing portion of the shutter plate 61 or the shutter plate 62 during the pre-sputtering. When a target is selected from a plurality of targets and sputter deposition is performed, the same material is deposited on the portion of the shutter plate 61 that covers the selected target at the time of pre-sputtering before the main sputtering. In order to make the relationship that it is not deposited, and in order to make the relationship that the deposition material by another target does not pass before a certain target in the discharge state when moving from pre-sputtering to main sputtering, double rotation With respect to the rotational operation of the two shutter plates 61 and 62 of the shutter mechanism 54, a double shutter control method as described below is performed.

  In the following, several typical embodiments of the double shutter control method according to the present invention will be described according to the number of targets and the type of sputtering (single sputtering, CO-sputtering).

  A first embodiment of the double shutter control method will be described with reference to FIGS. In the first embodiment, the number of targets is four, and a single-sputtering is performed using a first shutter plate with two holes and a second shutter plate with one hole. The double shutter control method according to the first embodiment corresponds to the configuration of the apparatus shown in FIGS. 8 and 9, for convenience of explanation, the four targets are denoted by reference numerals T1 to T4, the two holes of the first shutter plate 61 facing the target are denoted by reference numerals H1 and H2, and the substrate One hole of the second shutter plate 62 on the side is indicated by the symbol H3.

  The targets T1 to T4 correspond to the targets 35 to 38 shown in FIG. 3, the holes H1 and H2 correspond to the holes 61a and 61b, and the hole H3 corresponds to the hole 62a. In the first shutter plate 61, the two holes H1, H2 are formed at positions separated by 180 °. In FIGS. 8 and 9, a circle 101 indicates the movement trajectory of the holes H1 to H3 when the two shutter plates 61 and 62 are rotated.

  10A to 10D, the first shutter plate 61 and the second shutter plate 62 are rotated and moved when the four targets T1 to T4 are sequentially sputtered in the order of T1, T2, T3, and T4. The location is shown. In the following description, it is assumed that a pre-sputtering process is performed before a main sputtering process is performed on a certain target. The power supply from the power source for performing the pre-sputtering and the main sputtering is performed for each target to be sputtered. Accordingly, the targets (T1 to T4) indicated by the hatched blocks in FIG. 10 are supplied with electric power and are in a discharge state, and other targets indicated by simple white blocks are not supplied with electric power and are not discharged. It shows that it is in a state. The matter regarding the display of the blocks representing the targets (T1 to T5) is the same in all the embodiments described below. In the first embodiment, the actual sputtering may be performed in a different order from the order of T1, T2, T3, and T4.

  FIG. 10A shows a state where the target T1 is subjected to main sputtering. The deposit T1a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T4 deposited in the previous pre-sputtering stage.

  In FIG. 11, as an example, the relationship between the pre-sputtering (A) and the main sputtering (B) with respect to the target T1 is shown. At the time of pre-sputtering, the hole H3 of the second shutter plate 62 is controlled to coincide with the target T1, and the first shutter plate 61 is controlled to be covered. When moving from pre-sputtering to main sputtering, the first shutter plate 61 rotates as indicated by an arrow 63, the hole H1 coincides with the target T1, and the target T1 is exposed to the substrate 34. In this state, only the deposit T1a on which the same substance is deposited is present at the position facing the target T1 on the first shutter plate 61.

  Therefore, as shown in FIG. 10A, during the pre-sputtering, the rotation operation of the first shutter plate 61 is controlled to a position where the position of the deposit T1a faces the target T1. When the target T1 is subjected to the main sputtering, the hole H3 of the second shutter plate 62 is made coincident with the target T1 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposit T1a is deposited, the hole H1 becomes the target T1. Rotate to match. As a result, the hole H1 of the first shutter plate 61 and the hole H3 of the second shutter plate 62 coincide with each other, the target T1 is exposed to the substrate 34, and the main sputtering is performed. In the above, only the deposit T1a passes through the front facing position of the target T1 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state while maintaining the discharge state. Therefore, the occurrence of the above-described cross contamination can be prevented. Note that the rotation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state does not allow other target materials to pass through the front facing position of the target T1.

  FIG. 10B shows a state in which the target T2 is next sputtered. Each of the deposits T1a and T2a deposited on the surface of the first shutter plate 61 is a material of the targets T1 and T2 deposited at the stage of the previous pre-sputtering or the like. When the target T2 is subjected to the main sputtering, the hole H3 of the second shutter plate 61 is made to coincide with the target T2 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a and T2a are deposited has the hole H1 as the target. Rotate to match T2. As a result, the hole H1 of the first shutter plate 61 and the hole H3 of the second shutter plate 62 coincide with each other, the target T2 is exposed to the substrate, and the main sputtering is performed. In the above description, only the deposit T2a passes through the front facing position of the target T2 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state while maintaining the discharge state, and other target materials pass. do not do. Therefore, the occurrence of the above-mentioned cross contamination can be prevented at the target T2 and the other targets T1, T3, T4.

  FIG. 10C shows a state in which the target T3 is next sputtered. Each of the deposits T1a, T2a, and T3a deposited on the surface of the first shutter plate 61 is a material of the targets T1 to T3 that has adhered in the pre-sputtering step or the like. When the target T3 is subjected to the main sputtering, the hole H3 of the second shutter plate 62 is made to coincide with the target T3 at the time of the pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T3a are deposited has the hole H2 as the target. Rotate to match T3. As a result, the hole H2 of the first shutter plate 61 and the hole H3 of the second shutter plate 62 coincide with each other, the target T3 is exposed to the substrate, and the main sputtering is performed. In the above, only the deposit T3a passes through the front facing position of the target T3 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state while maintaining the discharge state, and other target materials pass through. do not do. Therefore, the occurrence of the above-mentioned cross contamination can be prevented at the target T3 and the other targets T1, T2, T4.

  FIG. 10D shows a state where the target T4 is next sputtered. Each of the deposits T1a, T2a, T3a, and T4a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T4 that has adhered in the pre-sputtering stage or the like. When the target T4 is subjected to the main sputtering, the hole H3 of the second shutter plate 62 is made to coincide with the target T4 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T4a are deposited has the hole H2 as the target. Rotate to match T4. As a result, the hole H2 of the first shutter plate 61 and the hole H3 of the second shutter plate 62 coincide with each other, the target T4 is exposed to the substrate, and the main sputtering is performed. In the above, only the deposit T4a passes through the front facing position of the target T4 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state while maintaining the discharge state, and other target materials pass through. do not do. Therefore, the occurrence of the above-mentioned cross contamination can be prevented at the target T4 and the other targets T1, T2, and T3.

  Next, there is a double shutter control method in which the number of targets is five and each of the first shutter plate and the second shutter plate has two holes, and one film forming chamber of the multi-source sputtering film forming apparatus. An embodiment capable of performing “single sputter control” and “CO-sputter control” using the common apparatus configuration will be described. In the description of this embodiment, first, an example of CO-sputter control will be described as a second embodiment, and then, as a third embodiment, single-sputter control performed continuously on the premise that the CO-sputter control has been performed. An example will be described.

  A second embodiment of the double shutter control method will be described with reference to FIGS. 12, 13, and 14A to 14D. The second embodiment is an example in which the number of targets is five and the first and second shutter plates having two holes are used to perform CO-sputtering.

  In FIGS. 12 and 13, the five targets are denoted by T1 to T5, the two holes of the first shutter plate 61 facing the target are denoted by symbols H11 and H12, and the two holes of the substrate-side shutter plate 62 are denoted by the symbol H13. , H14. The holes H11 and H12 in the first shutter plate 61 are formed at positions spaced apart by 144 ° in the clockwise direction, and the holes H13 and H14 in the second shutter plate 62 are also formed at positions separated by 144 ° in the clockwise direction. Has been. In FIGS. 12 and 13, a circle 101 indicates the movement trajectory of the holes H11 to H14 when the shutter plates 61 and 62 are rotated.

  14A to 14D, based on five targets T1 to T5, (T1, T3) CO-sputter, (T2, T4) CO-sputter, (T1, T4) CO-sputter, (T2, T5) ) Shows the rotational movement positions of the first shutter plate 61 and the second shutter plate 62 in the case of sequential CO-sputtering. In each of FIGS. 14A to 14D, the upper stage (A) shows a state during pre-sputtering, and the lower stage (B) shows a state during main sputtering. When the first shutter plate 61 or the second shutter plate 62 moves from the position during the pre-sputtering, the state is shifted to a state where the main sputtering is performed.

  In CO-sputtering with respect to the five targets T1 to T5, the current apparatus configuration is based on the rule that adjacent targets cannot perform CO-sputtering based on the sputter power connection relationship and the shutter hole restrictions as described above (T1 , T3), (T2, T4), (T1, T4), and (T2, T5), four sets of CO-sputtering are performed.

  FIG. 14A shows a state where two targets T1 and T3 are initially CO-sputtered. In the initial state, no film is deposited on either the first shutter plate 61 or the second shutter plate 62. In order to perform CO-sputtering of the targets T1 and T3, power is supplied from the power source to each of the targets T1 and T3, and only the targets T1 and T3 are discharged.

  In FIG. 14A, targets T1 and T3 indicated by hatched blocks are in a discharge state, and targets T2, T4, and T5 indicated by white blocks are in a non-discharge state. Deposits T1a and T3a are deposited on the surface of the first shutter plate 61 based on the discharge state during pre-sputtering. The deposits T1a and T3a are substances of the targets T1 and T3 that have adhered to the opposing surface portions based on the targets T1 and T3 that are in a discharged state during pre-sputtering, respectively.

As shown in FIG. 14A, during pre-sputtering, the rotation of the first shutter plate 61 causes the hole H11 to coincide with the position between the targets T1 and T2, and the hole H12 to be aligned with the targets T3 and T4.
Control to match. Further, during pre-sputtering, the rotation operation of the second shutter plate 62 is controlled so that the hole H13 coincides with the target T1 and the hole H14 coincides with the target T3. There is no deposit on the surface of the second shutter plate 61.

  Next, when the targets T1 and T3 are subjected to main sputtering, the first shutter plate 61 on which the deposits T1a and T3a are deposited is rotated so that the holes H11 and H12 coincide with the targets T1 and T3, respectively. As a result, the hole H11 of the first shutter plate 61 and the hole H13 of the second shutter plate 62 coincide, the hole H12 of the second shutter plate 61 and the hole H14 of the second shutter plate 62 coincide, and the target T1 and the target T3 Is exposed to the substrate and the main sputtering is performed.

  In the above, when the first shutter plate 61 is rotated from the pre-sputtering state to the main sputtering state while maintaining the discharge, only the deposits T1a and T3a pass through the front facing positions of the targets T1 and T3, respectively. Therefore, the occurrence of the above-described cross contamination can be prevented.

  FIG. 14B shows a state when the targets T2 and T4 are next subjected to CO-sputtering after the end of the main sputtering shown in FIG. 14A. In this case, the targets T2 and T4 are in a discharge state, and the targets T1, T3, and T5 are in a non-discharge state. Further, in this case, at the time of pre-sputtering, the rotation operation of the first shutter plate 61 is controlled again so that the hole H11 coincides with the position between the targets T1 and T2 and the hole H12 coincides with the position between the targets T3 and T4. The rotation operation of the second shutter plate 62 is controlled so that the hole H13 matches the target T2, and the hole H14 matches the target T4. There is no deposit on the surface of the second shutter plate 61.

  Deposits T2a and T4a are newly deposited on the surface of the first shutter plate 61 by pre-sputtering. Each of the deposits T1a to T4a is a substance of the targets T1 to T4 deposited in the previous CO-sputtering and current pre-sputtering stages. When the targets T2 and T4 are subjected to main sputtering, the first shutter plate on which the deposits T1a to T4a are deposited with the holes H13 and H14 of the second shutter plate 62 aligned with the targets T2 and T4 at the time of pre-sputtering. 61 is rotated so that the holes H11 and H12 coincide with the targets T2 and T4, respectively. As a result, the holes H11 and H12 of the first shutter plate 61 and the holes H13 and H14 of the second shutter plate 62 coincide with each other, the targets T2 and T4 are exposed to the substrate, and the main sputtering is performed.

  In the above, when the first shutter plate 61 is rotated from the pre-sputtering state to the main sputtering state while maintaining the discharge, only the deposits T2a and T4a pass through the front facing positions of the targets T2 and T4. Therefore, the occurrence of the above-described cross contamination can be prevented at the targets T2 and T4.

  FIG. 14C shows a state when the targets T1 and T4 are next subjected to CO-sputtering after the end of the main sputtering shown in FIG. 14B. In this case, the targets T1, T4 are in a discharge state, and the targets T2, T3, T5 are in a non-discharge state. Further, in this case, during pre-sputtering, the rotation operation of the first shutter plate 61 is controlled so that the hole H12 matches the target T1 and the hole H11 matches the target T4, and the rotation operation of the second shutter plate 62 is controlled by the hole H14. Is matched with the position between the targets T1 and T2, and the hole H13 is controlled to match the position between the targets T4 and T5. Each of the deposits T1a to T4a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T4 deposited in a stage such as pre-sputtering before that. Further, deposits T1a and T4a are formed on the surface of the second shutter plate 62 by this pre-sputtering.

  When the targets T1 and T4 are subjected to main sputtering, the second shutter plate 62 on which the deposits T1a and T4a are deposited is rotated so that the holes H14 and H13 coincide with the targets T1 and T4, respectively. As a result, the holes H12 and H11 of the first shutter plate 61 and the holes H14 and H13 of the second shutter plate 62 coincide with each other, the targets T1 and T4 are exposed to the substrate, and the main sputtering is performed.

  In the above, when the first shutter plate 61 is rotated from the pre-sputtering state to the main sputtering state while maintaining discharge, only the deposits T1a and T4a pass through the front facing positions. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the targets T1 and T4.

  FIG. 14D shows a state in which the targets T2 and T5 are next subjected to CO-sputtering after the end of the main sputtering shown in FIG. 14C. In this case, the targets T2 and T5 are in a discharge state, and the targets T1, T3, and T4 are in a non-discharge state. Further, in this case, during pre-sputtering, the rotation operation of the first shutter plate 61 is controlled so that the hole H12 matches the target T2 and the hole H11 matches the target T5, and the rotation operation of the second shutter plate 62 is controlled by the hole H14. Is matched with the position between the targets T1 and T2, and the hole H13 is controlled to match the position between the targets T4 and T5. Each of the deposits T1a to T4a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T4 deposited in a stage such as pre-sputtering before that. In addition to the deposits T1a and T4a, deposits T2a and T5a are newly formed on the surface of the second shutter plate 62 by the pre-sputtering this time.

  When the targets T2 and T5 are sputtered, the second shutter plate 62 on which the deposits T1a, T2a, T4a, and T5a are deposited is rotated so that the holes H14 and H13 coincide with the targets T2 and T5, respectively. As a result, the holes H12 and H11 of the first shutter plate 61 and the holes H14 and H13 of the second shutter plate 62 coincide with each other, the targets T2 and T5 are exposed to the substrate, and the main sputtering is performed.

  In the above, when the first shutter plate 61 is rotated from the pre-sputtering state to the main sputtering state while maintaining the discharge, only the deposits T2a and T5a pass through the front facing positions of the targets T2 and T5. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the targets T2 and T5.

  Next, a third embodiment of the double shutter control method will be described with reference to FIGS. 15A to 15E. The third embodiment is a single sputtering control method using the same apparatus configuration as that of the second embodiment described with reference to FIGS. 12 and 13, and the single sputtering is performed following the CO-sputtering of the second embodiment. How to do it. Therefore, the double shutter control method of the third embodiment is an example in which the number of targets is five, and the single sputtering is performed using the first shutter plate and the second shutter plate each having two holes. Further, in the single sputtering according to the third embodiment, the position where the film is finally attached at the end of the final main sputtering in the second embodiment (the film attachment position at the time of the main sputtering in FIG. 14D) is used. Pre-sputtering is performed.

  15A to 15E, five targets T1 to T5, two holes H11 and H12 of the first shutter plate 61 facing the target, and two holes H13 and H14 of the shutter plate 62 on the substrate side are those of the second embodiment. Same as the case.

  15A to 15E show the rotational movement positions of the first shutter plate 61 and the second shutter plate 62 when five targets T1 to T5 are single-sputtered sequentially in the order of T1, T2, T3, T4, and T5. It is shown. In each of FIGS. 15A to 15E, the upper stage (A) shows a state during pre-sputtering, and the lower stage (B) shows a state during main sputtering.

  FIG. 15A shows a state where the target T1 is single-sputtered after the end of the main sputtering shown in FIG. 14D. In this case, the target T1 is discharged and the targets T2 to T5 are not discharged. Further, in this case, during pre-sputtering, the rotation operation of the first shutter plate 61 is controlled so that the hole H11 matches the position between the targets T1 and T2, and the hole H12 matches the position between the targets T3 and T4. The rotation operation of the second shutter plate 62 is controlled so that the hole H14 matches the target T1 and the hole H13 matches the target T4.

  The deposits T1a, T2a, T3a, and T4a deposited on the surface of the first shutter plate 61 are the targets T1 to T1 that have adhered to the opposing surface locations based on the targets T1 to T4 in the discharged state at the stage of pre-sputtering as described above. It is a substance of T4. In addition, the deposits T1a, T2a, T4a, and T5a deposited on the surface of the second shutter plate 62 are adhered to the opposing surface portions based on the targets T1, T2, T4, and T5 in the discharge state in the respective discharges described above. It is a substance of targets T1, T2, T4, T5.

  As shown in FIG. 15A, during pre-sputtering, the rotation operation of the first shutter plate 61 is controlled to a position where each of the deposits T1a to T4a faces the targets T1 to T4. Further, during pre-sputtering, the rotation of the second shutter plate 62 is controlled so that the hole H14 matches the target T1 and the hole H13 matches the target T4.

  Next, when the target T1 is subjected to main sputtering, the first shutter plate 61 on which the deposits T1a to T4a are deposited is rotated so that the hole H11 coincides with the target T1. As a result, the hole H11 of the first shutter plate 61 and the hole H14 of the second shutter plate 62 coincide with each other, the target T1 is exposed to the substrate, and the main sputtering is performed.

  In the above, when the first shutter plate 61 rotates from the pre-sputtering state to the main sputtering state while maintaining the discharge, only the deposit T1a passes through the front facing position of the target T1, and no other target material passes. . Therefore, the occurrence of the above-described cross contamination can be prevented.

  FIG. 15B shows a state where the target T2 is subsequently single-sputtered after the end of the main sputtering shown in FIG. 15A. In this case, the target T2 is in a discharged state, and the targets T1, T3 to T5 are in a non-discharged state. Further, in this case, during pre-sputtering, the rotation operation of the first shutter plate 61 is controlled so that the hole H11 matches the position between the targets T1 and T2, and the hole H12 matches the position between the targets T3 and T4. The rotation operation of the second shutter plate 62 is controlled so that the hole H14 coincides with the target T2 and the hole H13 coincides with the target T5.

  The deposits T1a, T2a, T3a, and T4a deposited on the surface of the first shutter plate 61 are the materials of the targets T1 to T4 that have been deposited at the stage of the previous pre-sputtering as described above. When the target T2 is sputtered, the first shutter plate 61 on which the deposits T1a to T4a are deposited is rotated so that the hole H11 coincides with the target T2. As a result, the hole H11 of the first shutter plate 61 and the hole H14 of the second shutter plate 62 coincide with each other, the target T2 is exposed to the substrate, and the main sputtering is performed.

  In the above, when the first shutter plate 61 rotates from the pre-sputtering state to the main sputtering state while maintaining the discharge, only the deposit T2a passes through the front facing position of the target T2. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the target T2.

  FIG. 15C shows a state where the target T3 is next single-sputtered after the end of the main sputtering shown in FIG. 15B. In this case, the target T3 is in a discharge state, and the targets T1, T2, T4, and T5 are in a non-discharge state. Further, in this case, during pre-sputtering, the rotation operation of the first shutter plate 61 is controlled so that the hole H11 matches the position between the targets T1 and T2, and the hole H12 matches the position between the targets T3 and T4. The rotation operation of the second shutter plate 62 is controlled so that the hole H13 coincides with the target T3 and the hole H14 coincides with the target T5.

  Each of the deposits T1a, T2a, T3a, and T4a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T4 that has adhered in the pre-sputtering stage or the like. When the target T3 is sputtered, the first shutter plate 61 on which the deposits T1a to T4a are deposited is rotated so that the hole H12 coincides with the target T3. As a result, the hole H12 of the first shutter plate 61 and the hole H13 of the second shutter plate 62 coincide with each other, the target T3 is exposed to the substrate, and the main sputtering is performed.

  In the above, when the first shutter plate 61 rotates from the pre-sputtering state to the main sputtering state while maintaining the discharge, only the deposit T3a passes through the front facing position of the target T3. Therefore, the occurrence of the above-mentioned cross contamination can be prevented at the target T3.

  FIG. 15D shows a state in which the target T4 is next sputtered after the end of the main sputtering shown in FIG. 15C. In this case, the target T4 is in a discharge state, and the targets T1 to T3 and T5 are in a non-discharge state. Further, in this case, during pre-sputtering, the rotation operation of the first shutter plate 61 is controlled so that the hole H11 matches the position between the targets T1 and T2, and the hole H12 matches the position between the targets T3 and T4. The rotation operation of the second shutter plate 62 is controlled so that the hole H13 coincides with the target T3 and the hole H14 coincides with the target T1.

  Each of the deposits T1a, T2a, T3a, and T4a deposited on the surface of the first shutter plate 61 is a material of the targets T1 to T4 deposited in the previous pre-sputtering stage. When the target T4 is sputtered, the first shutter plate 61 on which the deposits T1a to T4a are deposited is rotated so that the hole H12 coincides with the target T4. As a result, the hole H12 of the first shutter plate 61 and the hole H13 of the second shutter plate 62 coincide with each other, the target T4 is exposed to the substrate, and the main sputtering is performed.

  In the above, when the first shutter plate 61 rotates from the pre-sputtering state to the main sputtering state while maintaining the discharge, only the deposit T4a passes through the front facing position of the target T4. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the target T4.

  FIG. 15E shows a state where the target T5 is subjected to main sputtering next after the completion of the main sputtering shown in FIG. 15D. In this case, the target T5 is in a discharged state, and the targets T1 to T4 are in a non-discharged state. Further, in this case, during pre-sputtering, the rotation operation of the first shutter plate 61 is controlled so that the hole H11 matches the target T3 and the hole H12 matches the target T5, and the rotation operation of the second shutter plate 62 is controlled by the hole H13. Is matched with the position between the targets T4 and T5, and the hole H14 is controlled to match the position between the targets T1 and T2.

  Each of the deposits T1a, T2a, T3a, and T4a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T4 that has adhered in the pre-sputtering stage or the like. When the target T5 is sputtered, the second shutter plate 62 is rotated so that the hole H13 coincides with the target T5. As a result, the hole H12 of the first shutter plate 61 and the hole H13 of the second shutter plate 62 coincide with each other, the target T5 is exposed to the substrate, and the main sputtering is performed.

  In the above, when the second shutter plate 62 rotates from the pre-sputtering state to the main sputtering state while maintaining the discharge, only the deposit T5a passes through the front facing position of the target T5. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the target T5.

  Next, a fourth embodiment of the double shutter control method will be described with reference to FIGS. In this embodiment, another example in which the number of targets is five by single sputtering will be described. 16 and 17, the five targets are indicated by T1 to T5, the holes of the first shutter plate 61 facing the target are indicated by H21, H22, and H23, and the holes of the substrate-side shutter plate 62 are indicated by H24. The holes H21, H22, H23 in the first shutter plate 61 are formed at positions separated by 144 ° and 216 ° clockwise with respect to the hole H21. In FIGS. 16 and 17, a circle 101 indicates the movement trajectory of the holes H21 to H24 when the two shutter plates 61 and 62 rotate.

  18A to 18E, the first shutter plate 61 and the second shutter plate 61 in each case when five targets T1 to T5 are sequentially sputtered in the order of T1, T2, T3, T4, and T5. The rotational movement position of the shutter plate 62 is shown. In the following description, it is assumed that a pre-sputtering process is performed before a main sputtering process is performed on a certain target.

  FIG. 18A shows a state in which the target T1 is subjected to main sputtering. Each of the deposits T1a, T2a, T3a, T4a, and T5a deposited on the surface of the first shutter plate 61 is a material of the targets T1 to T5 deposited in the previous pre-sputtering stage.

  As shown in FIG. 18A, during the pre-sputtering, the rotation operation of the first shutter plate 61 is controlled to a position where each of the deposits T1a to T5a faces the targets T1 to T5.

  When the target T1 is subjected to the main sputtering, the hole H24 of the second shutter plate 62 is made to coincide with the target T1 at the time of pre-sputtering, and then the hole H21 is the target T1 on the first shutter plate 61 on which the deposits T1a to T5a are deposited. Rotate to match. As a result, the hole H21 of the first shutter plate 61 and the hole H24 of the second shutter plate 62 coincide with each other, the target T1 is exposed to the substrate, and the main sputtering is performed. In the above description, only the deposit T1a passes through the front facing position of the target T1 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state. Therefore, the occurrence of the above-described cross contamination can be prevented. Note that the rotation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state does not allow other target materials to pass through the front facing positions of the other targets T1, T3, T4, and T5.

  FIG. 18B shows a state in which the target T2 is next subjected to main sputtering. Each of the deposits T1a to T5a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T5 deposited in the previous pre-sputtering stage. When the target T2 is subjected to the main sputtering, the hole H24 of the second shutter plate 62 is made coincident with the target T2 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T5a are deposited has the hole H21 as the target. Rotate to match T2. As a result, the hole H21 of the first shutter plate 61 and the hole H24 of the second shutter plate 62 coincide with each other, the target T2 is exposed to the substrate, and the main sputtering is performed. In the above, only the deposit T2a passes through the front facing position of the target T2 in the rotation operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the target T2.

  FIG. 18C shows a state in which the target T3 is next sputtered. Each of the deposits T1a to T5a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T5 deposited in the previous pre-sputtering stage. When the target T3 is subjected to the main sputtering, the hole H24 of the second shutter plate 62 is made to coincide with the target T3 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T5a are deposited has the hole H22 as the target. Rotate to match T3. As a result, the hole H22 of the first shutter plate 61 and the hole H24 of the second shutter plate 62 coincide with each other, the target T3 is exposed to the substrate, and the main sputtering is performed. In the above description, only the deposit T3a passes through the front facing position of the target T3 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state. Therefore, the occurrence of the above-mentioned cross contamination can be prevented at the target T3.

  (D) of FIG. 18 shows a state when the target T4 is next sputtered. Each of the deposits T1a to T5a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T5 deposited in the previous pre-sputtering stage. When the target T4 is subjected to the main sputtering, the hole H24 of the second shutter plate 62 is made to coincide with the target T4 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T5a are deposited has the hole H22 as the target. Rotate to match T4. As a result, the hole H22 of the first shutter plate 61 and the hole H24 of the second shutter plate 62 coincide with each other, the target T4 is exposed to the substrate, and the main sputtering is performed. In the above, only the deposit T4a passes through the front facing position of the target T4 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the target T4.

  Next, FIG. 18E shows a state in which the target T5 is subjected to main sputtering. Each of the deposits T1a to T5a deposited on the surface of the first shutter plate 61 is a material of the targets T1 to T5 deposited in the previous pre-sputtering stage. When the target T5 is subjected to main sputtering, the hole H24 of the second shutter plate 62 is made to coincide with the target T5 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T5a are deposited has the hole H23 as the target. Rotate to match T5. As a result, the hole H23 of the first shutter plate 61 and the hole H24 of the second shutter plate 62 coincide with each other, the target T5 is exposed to the substrate, and the main sputtering is performed. In the above, only the deposit T5a passes through the front facing position of the target T5 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the target T5.

  Next, a fifth embodiment of the double shutter control method will be described with reference to FIGS. In this embodiment, there will be described an example in which the number of targets is four and CO-sputtering is performed. FIG. 19 corresponds to FIG. 8 and FIG. 20 corresponds to FIG. In FIG. 19 to FIG. 21, the same elements as those described in FIG. The four targets are indicated by T1 to T4, the holes of the first shutter plate 61 facing the target are indicated by H31 and H32, and the holes of the second shutter plate 62 on the substrate side are indicated by H33 and 34. In the first shutter plate 61, the two holes H31 and H32 are formed at positions 180 degrees apart, and in the second shutter plate 62, the two holes H33 and H34 are formed at positions 180 degrees apart.

  21A and 21B, the first shutter plate in each case when four targets T1 to T4 are sequentially sputtered in the order of the combination of (T1, T3) and (T2, T4). The rotational movement positions of 61 and the second shutter plate 62 are shown. A pre-sputtering process is performed before the main sputtering process is performed on a target.

  FIG. 21A shows a state in which the targets T1 and T3 are sputtered. Each of the deposits T1a, T2a, T3a, and T4a deposited on the surface of the first shutter plate 61 is the material of the targets T1 to T4 deposited in the previous pre-sputtering stage.

  As shown in FIG. 21A, during the pre-sputtering, the rotation operation of the first shutter plate 61 is controlled to a position where each of the deposits T1a to T4a faces the targets T1 to T4. When performing the main sputtering of the targets T1 and T3, the holes H33 and H34 of the second shutter plate 62 are made to coincide with the targets T1 and T3 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T4a are deposited is used. The holes H31 and H32 are rotated so as to coincide with the targets T1 and T3. As a result, the holes H31 and H32 of the first shutter plate 61 and the holes H33 and H34 of the second shutter plate 62 coincide with each other, the targets T1 and T3 are exposed to the substrate, and the main sputtering is performed. In the above description, only the deposits T1a and T3a pass through the front facing positions of the targets T1 and T3 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state, respectively. Therefore, the occurrence of the above-described cross contamination can be prevented.

  FIG. 21B shows a state in which the targets T2 and T4 are next subjected to main sputtering. Each of the deposits T1a to T4a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T4 deposited in the previous pre-sputtering stage. When the targets T2 and T4 are subjected to main sputtering, the holes H33 and H34 of the second shutter plate 62 are made to coincide with the targets T2 and T4 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T4a are deposited is used. The holes H31 and H32 are rotated so as to coincide with the targets T2 and T4. Thereby, the holes H31 and H32 of the first shutter plate 61 and the holes H33 and H34 of the second shutter plate 62 coincide with each other, and the targets T2 and T4 are exposed to the substrate and the main sputtering is performed. In the above, only the deposits T2a and T4a pass through the front facing positions by the targets T2 and T4 in the rotating operation of the first shutter plate 611 from the pre-sputtering state to the main sputtering state. Therefore, the occurrence of the above-mentioned cross contamination can be prevented at the targets T2 and T4.

  Next, a sixth embodiment of the double shutter control method will be described with reference to FIGS. In this embodiment, the number of targets is five and CO-sputtering is performed. 22 to 24, the same reference numerals are given to the same elements as those described in the previous embodiment. The five targets are indicated by T1 to T5, the holes of the first shutter plate 61 facing the target are indicated by H51, H52 and H53, and the holes of the second shutter plate 62 on the substrate side are indicated by H54 and H55. In the first shutter plate 61, the three holes H51, H52, and H53 are respectively formed at positions that are 144 ° and 72 ° apart in the clockwise direction, and in the second shutter plate 62, the two holes H54 and H55 are clockwise. It is formed at a position separated by 144 °.

  As shown in FIG. 24, also in the case of the present embodiment, the five targets T1 to T5 are sequentially set in the order of the combination of (T1, T3), (T2, T4), (T1, T4), (T2, T5). Sputter. FIG. 24 shows the rotational movement positions of the first shutter plate 61 and the second shutter plate 62 in the case of each main sputtering. A pre-sputtering process is performed before the main sputtering process is performed on a target.

  FIG. 24A shows a state where two targets T1 and T3 are subjected to main sputtering. Each of the deposits T1a, T2a, T3a, T4a, and T5a deposited on the surface of the first shutter plate 61 is a material of the targets T1 to T5 deposited in the previous pre-sputtering stage.

  As shown in FIG. 24A, during the pre-sputtering, the rotation operation of the first shutter plate 61 is controlled to a position where each of the deposits T1a to T5a faces the targets T1 to T5. When the targets T1 and T3 are subjected to main sputtering, the holes H54 and H55 of the second shutter plate 62 are made to coincide with the targets T1 and T3 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T5a are deposited is used. The holes H51 and H52 are rotated so as to coincide with the targets T1 and T3. As a result, the holes H51 and H52 of the first shutter plate 61 and the holes H54 and H55 of the second shutter plate 62 coincide with each other, and the targets T1 and T3 are exposed to the substrate and the main sputtering is performed. In the above description, only the deposits T1a and T3a pass through the front facing positions of the targets T1 and T3 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state, respectively. Therefore, the occurrence of the above-described cross contamination can be prevented.

  FIG. 24B shows a state in which the targets T2 and T4 are next subjected to main sputtering. Each of the deposits T1a to T5a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T5 deposited in the previous pre-sputtering stage. When the targets T2 and T4 are subjected to main sputtering, the holes H54 and H55 of the second shutter plate 62 are made to coincide with the targets T2 and T4 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T5a are deposited is used. The holes H51 and H52 are rotated so as to coincide with the targets T2 and T4. Thereby, the holes H51 and H52 of the first shutter plate 61 and the holes H54 and H55 of the second shutter plate 62 coincide with each other, the targets T2 and T4 are exposed to the substrate, and the main sputtering is performed. In the above, only the deposits T2a and T4a pass through the front facing positions by the targets T2 and T4 in the rotating operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state. Therefore, the occurrence of the above-mentioned cross contamination can be prevented at the targets T2 and T4.

  FIG. 24C shows a state in which the targets T1 and T4 are next subjected to main sputtering. Each of the deposits T1a to T5a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T5 deposited in the previous pre-sputtering stage. When the main sputtering is performed on the targets T1 and T4, the holes H51 and H53 of the first shutter plate 62 are made to coincide with the targets T1 and T4 at the time of the pre-sputtering, and thereafter, the adhered T1a, T3a, T4a, and T5a are deposited. The shutter plate 62 is rotated so that the holes H54 and H55 coincide with the targets T1 and T4. Thereby, the holes H51 and H53 of the first shutter plate 61 and the holes H54 and H55 of the second shutter plate 62 coincide with each other, the targets T1 and T4 are exposed to the substrate, and the main sputtering is performed. In the above, only the deposits T1a and T4a pass through the front facing positions by the targets T1 and T4 in the rotation operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the targets T1 and T4.

  FIG. 24D shows a state in which the targets T2 and T5 are next subjected to main sputtering. Each of the deposits T1a to T5a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T5 deposited in the previous pre-sputtering stage. When the targets T2 and T5 are subjected to main sputtering, the holes H54 and H55 of the second shutter plate 62 are made to coincide with the targets T2 and T5 at the time of pre-sputtering, and then the first shutter plate 61 on which the deposits T1a to T5a are deposited is used. The holes H51 and H53 are rotated so as to coincide with the targets T2 and T5. Thereby, the holes H51 and H53 of the first shutter plate 61 and the holes H54 and H55 of the second shutter plate 62 coincide with each other, the targets T2 and T5 are exposed to the substrate, and the main sputtering is performed. In the above, only the deposits T2a and T5a pass through the front facing positions by the targets T2 and T5 in the rotation operation of the first shutter plate 61 from the pre-sputtering state to the main sputtering state. Therefore, occurrence of the above-mentioned cross contamination can be prevented at the targets T2 and T5.

  FIG. 24E shows a state in which the targets T3 and T5 are next subjected to main sputtering. Each of the deposits T1a to T5a deposited on the surface of the first shutter plate 61 is a substance of the targets T1 to T5 deposited in the previous pre-sputtering stage. When the targets T3 and T5 are subjected to the main sputtering, the holes H51 and H53 of the first shutter plate 61 are made to coincide with the targets T3 and T5 at the time of the pre-sputtering, and then the attached T1a, T3a, T4a and T5a are deposited. The shutter plate 62 is rotated so that the holes H54 and H55 coincide with the targets T3 and T5. Thereby, only the deposits T3a and T5a pass through the front facing positions of the targets T3 and T5. Therefore, the occurrence of the above-mentioned cross contamination can be prevented at the targets T3 and T5.

  In the above double shutter control method, the number of holes formed in each shutter plate according to the target number (n) and the shutter used for pre-sputtering can be classified as shown in the table shown in FIG. Is possible.

  The configurations, shapes, sizes, and arrangement relationships described in the above embodiments (examples) are merely schematically shown to the extent that the present invention can be understood and implemented, and numerical values and compositions ( (Material) is only an example. Therefore, the present invention is not limited to the described embodiments (examples), and can be modified in various forms without departing from the scope of the technical idea shown in the claims.

  The present invention is used to prevent occurrence of cross-contamination when single sputtering or CO-sputtering is performed by appropriately selecting a target with a double rotation shutter mechanism by providing a plurality of targets in one chamber. .

It is a top view of the magnetic multilayer film production apparatus with which this invention is applied. FIG. 2A is a plan view showing the arrangement of a plurality of targets in one sputter deposition chamber of the magnetic multilayer film manufacturing apparatus, and a longitudinal sectional view of the sputter deposition chamber. It is a disassembled block diagram which shows the typical structure of a double rotation shutter mechanism. It is a block diagram which shows the structure of the control apparatus which controls the rotation operation of a double rotation shutter mechanism. It is a figure explaining the cross contamination which is a problem by this invention. It is a figure explaining the basic operation | movement of the double shutter control method which concerns on this invention. It is a figure explaining the basic operation at the time of pre-sputtering and main sputtering of the double shutter control method concerning the present invention. FIG. 3 is a target layout diagram of the first embodiment of the double shutter control method according to the present invention. FIG. 3 is a layout diagram of holes in the first and second shutter plates of the first embodiment of the double shutter control method. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board at the time of this sputtering of 1st Example of a double shutter control method. It is a state transition diagram which shows the positional relationship of the target sputter | spattered at the time of this sputtering, and the 1st and 2nd shutter board | plate. It is a target layout of the second embodiment of the double shutter control method according to the present invention. It is a layout diagram of the holes of the first and second shutter plates of the second embodiment of the double shutter control method. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board | plate when target T1, T3 is CO-sputtered in 2nd Example. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board | plate when target T2, T4 is CO-sputtered in 2nd Example. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board when target T1, T4 is CO-sputtered in 2nd Example. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board | plate when target T2, T5 is CO-sputtered in 2nd Example. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board | plate when carrying out the single sputtering of the target T1 in 3rd Example of the double shutter control method which concerns on this invention. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board | plate when carrying out the single sputtering of the target T2 in 3rd Example. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board when carrying out the single sputtering of the target T3 in 3rd Example. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board | plate when carrying out the single sputtering of the target T4 in 3rd Example. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board | plate when carrying out the single sputtering of the target T5 in 3rd Example. It is a target layout of the fourth embodiment of the double shutter control method according to the present invention. It is a layout drawing of the holes of the first and second shutter plates of the fourth embodiment of the double shutter control method. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board at the time of this sputtering of 4th Example of a double shutter control method. It is a target layout of the fifth embodiment of the double shutter control method according to the present invention. FIG. 10 is a layout diagram of holes in first and second shutter plates of a fifth embodiment of the double shutter control method. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board at the time of this sputtering of 5th Example of a double shutter control method. It is a target layout of the sixth embodiment of the double shutter control method according to the present invention. It is a layout diagram of the holes of the first and second shutter plates of the sixth embodiment of the double shutter control method. It is a state transition diagram which shows the change of the position of the 1st and 2nd shutter board at the time of this sputtering of 6th Example of a double shutter control method. It is a table | surface which shows the relationship between the number of targets and the number of holes of a 1st and 2nd shutter board.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Magnetic multilayer film production apparatus 17A-17C Film-forming chamber 35-38 Target 54 Double rotation shutter mechanism 61 1st shutter board 62 2nd shutter board T1-T5 Target

Claims (2)

Deposition chamber for sputtering,
A substrate holder for placing the substrate, located in the sputtering film forming chamber;
A target placement means for placing a first target and a second target made of a material different from the first target, located in the sputtering deposition chamber; and
A shutter mechanism located in the sputtering film forming chamber, comprising: a shutter plate comprising a passage portion through which sputtered particles pass during sputtering and a blocking portion through which the sputtered particles are blocked; and a rotation for rotating the shutter plate. A shutter mechanism having a driving means;
The shutter mechanism further includes:
At the time of sputtering, the shutter plate was rotated so that the sputtered particles from the first target were blocked at the blocking location of the shutter plate and deposited on the blocking location. Thereafter, the sputter particles from the first target pass through the shutter plate through the passage portion toward the substrate, and the sputter particles from the second target are on a cut-off portion different from the cut-off portion. Sputtering characterized by having control means for controlling the rotation angle of the rotation drive means so that the shutter plate rotates in order to position the passage location and blocking location of the shutter plate at the deposition position. apparatus. Deposition chamber for sputtering,
A substrate holder for placing the substrate, located in the sputtering film forming chamber;
A target placement means for placing a first target and a second target made of a material different from the first target, located in the sputtering deposition chamber; and
A shutter mechanism located in the sputtering film forming chamber, having a first and a second shutter plate having a passage location for passing sputtered particles during sputtering and a blocking location for blocking the sputtered particles. A shutter mechanism, and a shutter mechanism having a rotation driving means for independently rotating the first shutter plate and the second shutter plate;
The shutter mechanism further includes:
The first shutter plate is disposed at a position where sputter particles from the first target are blocked at the blocking position of the first shutter plate and deposited on the blocking position during sputtering. The sputtered particles from the first target pass through the first and second shutter plates through the passage locations toward the substrate to position the passage locations. After the second shutter plate is rotated, the passage of the first shutter plate and the blocking of the second shutter plate are at positions where the sputtered particles from the second target are deposited on the blocking portion of the second shutter plate. Sputtering apparatus comprising control means for controlling the rotation angle of the rotation driving means so that the first and second shutter plates rotate to position the portion.

Images