JP2008095154A - Target base, target device and sputtering apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a target base which has a small size, extends a replacement cycle for a target and can easily form a stacked film on a substrate; a target device; and a sputtering apparatus. <P>SOLUTION: A target holding part 2 of the target base 1 used in the sputtering apparatus is a polyhedron, and can make both holding faces 2a and 2b hold the target, so that the target base can be miniaturized. The target base 1 has a rotating shaft and can rotate, so that the sputtering apparatus can continually perform a sputtering treatment for the substrate while switching the target facing to the substrate by rotating the target base 1. By making the holding surface 2a and 2b hold the target formed from the same kind of material, the sputtering apparatus can extend the replacement cycle for the target. By making the holding surface 2a and 2b hold targets formed from a different kind of materials, even one sputtering apparatus can easily form a two-layer stacked film on the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a target base, a target apparatus, and a sputtering apparatus mainly used for forming a thin film on a semiconductor substrate.

  In the sputtering process, a DC high voltage is applied between the substrate and the target while introducing an inert gas into the vacuum, and the ionized inert gas is collided with the target to form a target material to be repelled on the substrate. Is the method.

  A sputtering apparatus used for a sputtering process is used for forming a thin film on a substrate surface in a manufacturing process of a semiconductor device, an electronic component, a liquid crystal panel, and the like. The sputtering apparatus includes a substrate holding unit that can hold a substrate on which a thin film is to be formed, and a target base that can hold a target. The target base is provided with a target holding unit capable of holding the target. When performing the sputtering process, the substrate is held by the substrate holding portion, and the target is held by the target holding portion. By applying a negative potential to the target, a plasma is formed, and ions in the plasma collide with the target, so that sputtered particles are scattered from the target and adhere to and deposit on the surface of the substrate to form a thin film on the substrate. It is formed. When ions in the plasma collide with the target, the collision surface of the target is overheated.

  FIG. 12A is a plan view showing the target base 101 and the substrate 104 of the conventional sputtering apparatus, and FIG. 12B is a cross-sectional view taken along the cutting plane line A1-A1 of FIG. A target 102 made of a thin film target material is held on one surface of the target base 101. Unlike the case of the vapor deposition method, atoms are knocked out of the target 102 through a fairly severe collision. Therefore, the surface of the target 102 where the atoms collide is overheated, and the target 102 needs to be cooled by cooling water. A substrate 104 is provided at a position facing the target 102, and a target material knocked out of the target 102 adheres onto the substrate, whereby a thin film 105 is formed on the substrate 104 and the sputtering process is completed.

  FIG. 13 is a plan view showing a conventional sputtering apparatus 110. A substrate holding table 112 that rotates while holding the substrate 104 is provided at a substantially central portion in the vacuum chamber 111 that constitutes the sputtering apparatus 110. Around the substrate holding table 112, a plurality of target bases 101 and cassette chambers 113 in which the substrates 104 are further accommodated at positions where the held substrates 104 can rotate and face the respective targets 102. Is provided. A cassette holder 114 is provided in the cassette chamber 113. A target 102 is held in advance on the target base 101. The substrate 104 taken out from the cassette holder 114 by an arm or the like (not shown) is mounted and held on the substrate holding table 112, and the substrate holding table 112 rotates while the substrate 104 is held. The rotation stops at the position where the substrate 104 faces the desired target 102, and the substrate 104 is subjected to the sputtering process. By using different types of targets 102, a stacked film can be formed over the substrate 104.

  Patent Document 1 discloses a sputtering method for forming a thin film using a plurality of target materials as described above. Further, in Patent Document 2, the first target and the second target are faced to each other in the same chamber, a substrate is disposed between them, and the first target and the second target are irradiated with laser. Discloses a laser deposition method and apparatus for simultaneously forming thin films on both sides of a substrate.

JP 2005-206875 A JP-A-8-246136

  Since the conventional target base 101 can attach only one target to one target base, when forming a laminated film with different target materials, the target base provided in one sputtering apparatus is used. Increasing the number of units to cope. Since the number of target bases that can be provided in the sputtering apparatus is limited, when forming a multilayer film that cannot be handled by one sputtering apparatus, the number of sputtering apparatuses is increased.

  In addition, since it is necessary to supply cooling water to each of the plurality of target bases, a large amount of cooling water is used to operate the apparatus, and the supply capacity on the factory side is under pressure.

  Furthermore, when it is not possible to provide a plurality of target bases, it is necessary to change the target each time the target material runs out, and it is necessary to release the vacuum state and evacuate again each time. .

  An object of the present invention is to provide a target base, a target device, and a sputtering device that solve the above-mentioned problems, are small in size, have a long target replacement period, and can easily form a laminated film on a substrate. It is in.

The present invention is a target base for holding a target used in a sputtering apparatus for forming a thin film on a substrate.
A target holding unit configured to hold the target;
A rotation shaft for rotating the target holding unit,
The target holding unit is
The shape is a polyhedron,
Configured to hold one target for one surface of the polyhedron,
A target base configured to be rotatable.

According to the invention, the target holding portion is
The shape is a right prism,
The target is held on a side surface of the right prism.

Moreover, according to the present invention, it has a cooling means for cooling the target,
The cooling water used in the cooling means is configured to be shared by a plurality of the targets.

  According to the invention, a part of the pipe for supplying and discharging the cooling water is the rotating shaft.

According to the invention, in the target device in which the target is held on the target base,
The target device is characterized in that the materials of the target are the same.

According to the invention, in the target device in which the target is held on the target base,
The target device includes a target material including different materials.

According to the present invention, the target base,
A sputtering apparatus comprising a substrate holding portion capable of holding a substrate on which a thin film is formed.

According to the present invention, the target device;
A sputtering apparatus comprising a substrate holding portion capable of holding a substrate on which a thin film is formed.

Moreover, according to the present invention, in the sputtering apparatus configured to include the target holding unit,
The target holding unit is
The shape is a polyhedron,
Configured to hold one target for one surface of the polyhedron,
The target is held on at least two surfaces of the polyhedron,
The sputtering apparatus is configured to be capable of holding a substrate on which a thin film is formed at a position facing the target.

  According to the present invention, in a target base for holding a target used in a sputtering apparatus for forming a thin film on a substrate, the target base rotates a target holding part for holding the target and a target holding part. And a rotating shaft for causing The target holding part has a polyhedron shape, and can hold the target on each surface of the polyhedron of the target holding part, and the target holding part can rotate around the rotation axis. . As a result, it is possible to hold a plurality of targets on one target base and further switch the target type by rotating the target holding portion, so that sputtering processing is performed on a plurality of targets and stacked on the substrate. When the film is formed, it is not necessary to provide a plurality of target bases, and it becomes possible to reduce the size of the sputtering apparatus provided with the target bases. In addition, since the target can be switched by rotating the target holding unit, it is possible to save time and effort for releasing the vacuum of the sputtering apparatus each time the target is switched, and the efficiency of the sputtering process is improved.

  Further, according to the present invention, the target holding portion is a right prism, and the target can be held on the side surface of the right prism. This makes it easy to set the rotation center, and by selecting a rotation axis parallel to the side surface of the target holding portion, alignment to a position facing the substrate is facilitated.

  Moreover, according to this invention, a target base has a cooling means, and a cooling means cools a target using cooling water. The cooling means includes a storage unit that stores cooling water, and is used by supplying cooling water to the storage unit. The cooling means is shared among a plurality of targets held by the target base. Accordingly, it is not necessary to provide cooling water for each of the plurality of targets, and the space for the target base can be saved.

  Further, according to the present invention, a part of the pipe for supplying and draining the cooling water to the cooling means is disposed at the position of the rotating shaft, so that it is not necessary to separately provide the rotating shaft, It becomes possible to simplify the structure of the target base.

  Further, according to the present invention, the target device has a plurality of targets made of the same material held on the target base. When performing sputtering using a sputtering apparatus provided with a target device, even if the target material of one target is exhausted, it is possible to lengthen the target replacement cycle by switching the target by rotating the target holder. Become.

  According to the present invention, the target device has a plurality of targets made of different materials held on the target base. When performing sputtering using a sputtering apparatus provided with a target device, the target holding unit is rotated to change the target, thereby changing the type of the target facing the substrate, and a single target base made of different materials. A laminated film can be formed on the substrate.

  According to the invention, the sputtering apparatus includes any one of the target bases having the above effects and a substrate holding unit capable of holding the substrate on which the thin film is formed. Since one target base holds a plurality of targets, it is smaller than a sputtering apparatus in which target bases are provided by the number of targets. Further, since the target holding portion rotates, it is easy to switch the target that is provided at a position facing the substrate and is subjected to the sputtering process when performing the sputtering process.

  According to the invention, the sputtering apparatus includes any one of the target apparatuses having the above-described effects and a substrate holding unit capable of holding the substrate on which the thin film is formed. Since the number of target replacements is reduced, the lifetime of the sputtering apparatus is increased. Further, since one target device holds a plurality of targets, the sputtering apparatus can be reduced in size.

  Further, according to the present invention, at least two or more surfaces of the target holding portion of the sputtering apparatus hold the target, and the substrate can be held at a position facing each target. Can be reduced.

  The sputtering process performed using the sputtering apparatus according to the present invention is a method in which an ionized Ar is applied by applying a DC high voltage between a substrate and a target while introducing an inert gas such as Ar gas in a vacuum. This is a method of depositing a target material that has been repelled and collided with the substrate onto a substrate. For example, the material to be deposited includes Cr or Ti.

Further, a small amount of O ₂ or N ₂ gas is introduced together with Ar gas, and for example, TiN or the like can be formed by reactive sputtering.

  Sputtering processing is classified as dry plating, and plating can be performed without exposing the object to be coated to a liquid or high-temperature gas. As a result, it is used in various substrate materials, for example, a plate or a molded article such as resin, glass, ceramic, etc., for example, when shielding or masking.

  Fig.1 (a) is a top view which shows the target base 1 comprised so that the target of the sputtering device which concerns on this invention can be hold | maintained. The target base 1 is provided with a target holding portion 2 capable of holding a target and a rotating shaft 4 at the center. The holding surface 2a of the target holding unit 2 is circular, but can take various shapes corresponding to the shape of the target to be held.

  FIG.1 (b) is sectional drawing seen from cut surface line A2-A2 of Fig.1 (a). The shape of the target holding portion 2 is a rectangular parallelepiped that is one of right-angled columns, and the holding surfaces 2a and 2b of the target holding portion 2 are provided on two opposing surfaces of the rectangular parallelepiped. As described above, the target base 1 can hold two targets by one unit, and is configured to be rotatable around the rotation shaft 4. For example, the target is held on the holding surfaces 2a and 2b, the substrate is placed at a position facing the target held on the holding surface 2a and sputtering is performed, and then the target holding unit 2 is rotated by 180 ° to hold the target 2b. Sputtering is performed with the target held on the substrate facing the substrate. When holding the target made of the same kind of material on the holding surfaces 2a and 2b, the sputtering process can be continued by rotating the target holding unit 2 180 ° even if the target material on either one of the surfaces is lost. As a result, the target exchange cycle becomes longer. Further, when holding targets made of different materials on the holding surfaces 2a and 2b, after performing sputtering treatment with the target on one surface, the target holding portion 2 is rotated 180 ° and sputtering treatment is performed with the target on the other surface. By doing so, it becomes possible to easily form a laminated film consisting of two layers on a substrate with one sputtering apparatus.

  Since the rotating shaft 4 passes through the center of the target holding unit 2 having a rectangular parallelepiped shape and is parallel to the plane having the holding surfaces 2a and 2b, the substrate to be processed and an arbitrary target are used during the sputtering process. , And then rotated to face another target, alignment is easy.

  A cooling water storage unit 3 that stores cooling water for cooling the target is provided inside the target holding unit 2. This is because in the sputtering process, when the ions collide with the target, the collision surface of the target is overheated, and the target must be cooled. Since the cooling water storage unit 3 is shared by the two holding surfaces 2a and 2b, the sputtering apparatus can be downsized. Moreover, since the target base 1 can hold two targets, the conventional target base 101 can hold only one target, and thus the volume of the cooling water storage unit 3 occupied by one target. Is half as much as before.

  FIG. 2 is a perspective view showing the target base 5 for holding the target of the sputtering apparatus according to the present invention. The shape of the target holding portion 6 is a cube which is one of right-angled columns, and holding surfaces 6a to 6d capable of holding the target are provided on the four side surfaces. Thus, one target base 5 can hold four targets, and the target base 5 is configured to be rotatable about the rotation shaft 4. For example, when holding the target on the holding surfaces 6a to 6d and arranging the substrate at a position facing the target and performing the sputtering treatment, the target holding portion 6 is rotated 90 °, 180 ° or 270 ° to face the substrate. You can change the target. When holding the target made of the same kind of material on the holding surfaces 6a to 6d, the sputtering process can be continued by rotating the target holding portion 6 even if any one of the target materials is lost. The exchange cycle becomes longer. In addition, when holding targets made of different materials on the holding surfaces 6a to 6d, after sputtering with any one of the targets, the target holding unit 6 is rotated to perform sputtering with any other target. A laminated film consisting of a maximum of four layers can be easily formed on a substrate with one sputtering apparatus. The targets held on the holding surfaces 6a to 6d do not have to be the same type or different types, and various combinations are possible. For example, only the targets 6a and 6b may be the same type.

  Since the rotating shaft 4 passes through the center of the target holding part 6 having a cubic shape and is parallel to the plane having the holding surfaces 6a to 6d, the substrate to be processed and an arbitrary target are used during the sputtering process. Are aligned, and then rotated to face another target.

  In addition, a cooling water storage unit 3 that stores cooling water for cooling the target is provided inside the target holding unit 6. This is because in the sputtering process, when the ions collide with the target, the collision surface of the target is overheated, and the target must be cooled. Since the cooling water storage unit 3 is shared by the four holding surfaces 6a to 6d, the sputtering apparatus can be downsized. The target base 5 can hold four targets, whereas the conventional target base 101 can hold only one target, so the volume of the cooling water storage unit 3 occupied by one target is That ’s less than a quarter of the conventional one.

  As the shape of the target holding part, a rectangular parallelepiped and a cube are given, but the shape of the target holding part is not limited to these. This is because a polyhedron can hold two or more targets. In particular, in the case of a right prism, alignment with the substrate is facilitated by providing a rotation axis parallel to the side surface.

  FIG. 3 is a view showing a pipe 7 for supplying and discharging cooling water. The pipe 7 is formed by integrating a water supply pipe 7a and a drain pipe 7b. In the present invention, the tube 7 is used as the rotating shaft 4. Of the tube 7, the portion used as the rotating shaft 4 is made of a hard tube, and the end portion of the tube excluding the portion used as the rotating shaft 4 is made of a hose-like soft tube. ing. Further, if the tube 7 is rotated more than once, the tube 7 is twisted at the end portion, so that the tube 7 is controlled not to rotate more than once by a rotation sensor (not shown). By using the tube 7 as the rotating shaft 4, it is not necessary to separately provide the rotating shaft 4 and the tube 7, and the device structure can be simplified. A rotation mechanism including a rotation sensor (not shown) will be described later.

  FIG. 4 is a plan view showing the sputtering apparatus 10 provided with the target bases 11a to 11c according to the present invention. The sputtering apparatus 10 includes a cassette chamber 20, three sputtering chambers 21 and a transfer chamber 22. A cassette chamber 20 and three sputtering chambers 21 are arranged around the transfer chamber 22. The cassette chamber 20 is provided with a cassette holder 15 for storing the substrate 17. The cassette holder 15 can store the substrate 17 before or after processing. The three sputter chambers 21 are provided with target bases 11a to 11c, and the target bases 11a to 11c have the same configuration as the target base 1 shown in FIG. The transfer chamber 21 is provided with a circular substrate holding table 16 that can hold the substrate 17 and is rotatable. The substrate holding table 16 has a cylindrical shape and can hold the substrate 17 to be processed on the side surface of the column.

  The process of performing a sputtering process using the sputtering apparatus 10 is demonstrated. The substrate 17 to be sputtered is stored in the cassette holder 15 in the cassette chamber 20, and the targets 18 a to 18 f are previously held on the holding surfaces 12 a to 12 f of the target bases 11 a to 11 c in the sputtering chamber 21. The The substrate 17 is sent from the cassette holder 15 into the transfer chamber 22 by a transfer robot (not shown) and held by the substrate holding table 16 in the transfer chamber 22.

  For example, when the sputtering process is performed in the order of the targets 18a, 18c, and 18e, the substrate holding table 16 is rotated, and the target 18a held on the target base 11a and the substrate 17 are first rotated at a position facing each other. Stops and the substrate 17 is sputtered by the target 18a. Next, the substrate 17 further rotates, and the substrate 17 is also rotated by the target base 11b and the target 18c and the target 18e held by the target base 11c at the positions facing each other and sequentially subjected to the sputtering process. As a result, a laminated film made of the materials of the targets 18 a, 18 c and 18 e is formed on the substrate 17. The substrates 17 are successively sent from the cassette holder 15 to the substrate holding table 16 and subjected to a sputtering process. During the sputtering process, the cassette chamber 20, the sputtering chamber 21 and the transfer chamber 22 are all kept in a vacuum state.

  For example, when sputtering processing is performed in the order of the targets 18a, 18b, 18c, 18d, 18e, and 18f, the substrate holding table 16 is rotated, and the target 18a that is first held on the target base 11a, , The rotation stops at the position facing each other, and the substrate 17 is sputtered by the target 18a. Next, the substrate 17 is sputtered by the target 18b at a position where the target base 11a rotates 180 ° and the target 18b and the substrate 17 face each other. Thereafter, the substrate holding table 16 is rotated, and the substrate 17 is sequentially sputtered also by the target base 11b and the targets 18c to 18f held by the target base 11c. As a result, a laminated film made of the materials of the targets 18a, 18b, 18c, 18d, 18e and 18f is formed on the substrate 17.

  FIG. 5 is a cross-sectional view taken along section line A3-A3 in FIG. A transfer chamber 22 is provided between the two sputtering chambers 21, that is, a substrate holding table 16 is provided between the target base 11a and the target base 11c. When the target material of the target 18a and the target 18b is the same type, when the target material of the target 18a runs out, the target base 11a rotates 180 ° around the rotation axis 14a, and the target 18b faces the transfer chamber 22. Placed in position.

  The targets 18a to 18f may be the same type or different types. If all of them are of the same type, for example, even if the material of the target 18a has to be reduced and replaced, the new target 18b can be maintained while maintaining the vacuum state by switching to the surface on which the target 18b is held by rotating 180 °. Can be switched to. In normal target exchange, if the material of one target is reduced and it has to be exchanged, it is necessary to release the vacuum state, attach a new target, and then make a high vacuum state again. For this purpose, it is necessary to draw a vacuum for about one day. It is possible to reduce the number of operations and improve the working efficiency of the sputtering apparatus. If they are all different types, it is possible to form a laminated film composed of a maximum of six types of target materials on the substrate by the sputtering apparatus 10.

  The rotating shaft 4 passes through the sputtering chamber 21 and the transfer chamber 22. During the sputtering process, a vacuum seal 34 seals the gap between the through hole and the rotary shaft 4 in order to keep the cassette chamber 20, the sputtering chamber 21 and the transfer chamber 22 in a vacuum state.

  In order to form a uniform thin film on the substrate, it is desirable that the target and the substrate face each other in parallel. If a shift occurs in parallel, the thickness of the thin film will not be uniform. Therefore, in order to accurately arrange the target and the substrate in parallel, the rotation of the target base and the substrate holding table is controlled as follows.

  As shown in FIG. 5, a gear 30 is fixed around the axis of the rotating shaft 4 outside the sputtering chamber 21 and the transfer chamber 22. By rotating the gear 30 using the rotation motor 31, the target 11 a is rotated around an axis parallel to the rotation shaft 4. Further, around the axis of the rotary shaft 4, a rotary plate 32 is fixed, and a light emitting / receiving sensor 33 for detecting the rotary plate 32 is provided separately.

  6 is a view showing the rotating plate 32 and the light emitting / receiving sensor 33 of FIG. 5, FIG. 7A is a plan view showing the rotating plate 32 of FIG. 6, and FIG. It is a top view which shows the shape of. The light emitting / receiving sensor 33 has a structure in which a light emitting element and a light receiving element (not shown) are incorporated in one package and are arranged to face each other with a gap therebetween. Usually, a light emitting element such as an LED (Light Emitting Diode) and a light receiving element such as a phototransistor are used. When a detected object is inserted between both elements, light is blocked by the detected object, and an output signal of the phototransistor Will change.

  As shown in FIG. 7A, the rotating plate 32 is a circular plate, and is provided with notches 32a at two locations. The two notches 32 a are provided at positions that are 180 ° from each other about the center of the rotating plate 32. The rotating plate 32 is fixed to the rotating shaft 4 perpendicular to the rotating shaft 4 so that the line connecting the two notches 32a and the surface on which the holding surface is provided are perpendicular to the rotating shaft 4. Passes through the center of the rotating plate 32. While the light 33a of the light receiving / emitting sensor 33 is blocked by the rotating plate 32, the rotating shaft 4 is rotated, and when the light 33a is irradiated to the position of the notch 32a, the light 32a reaches the light receiving sensor, Automatic control is performed to stop the rotation of the rotary shaft 4.

  When the target can be held on the four holding surfaces 6a to 6d of the target holding portion 6 as in the target base 5 shown in FIG. 2, the rotating plate 32 is circular as shown in FIG. 7B. It is a board and the notch part 32a is provided in four places. The four notches 32 a are provided at positions that are 90 ° with respect to the center of the rotating plate 32. The rotating plate 32 is rotated so that the two lines connecting the two notches 32a facing each other by 180 ° centered on the center of the rotating plate 32 and the surface provided with the holding surface are perpendicular to each other. The rotating shaft 4 is fixed perpendicularly to the shaft 4, and the rotating shaft 4 passes through the center of the rotating plate 32. While the light 33a of the light receiving / emitting sensor 33 is blocked by the rotating plate 32, the rotating shaft 4 is rotated, and when the light 33a is irradiated to the position of the notch 32a, the light 32a reaches the light receiving sensor, Automatic control is performed to stop the rotation of the rotary shaft 4.

  FIG. 8 is a view showing a sputtering apparatus 40 according to the present invention. Two sputtering devices 40a and 40b are provided with the target holding part 41 interposed therebetween, and sputtering chambers 21a and 21b and transfer chambers 22a and 22b are provided, respectively. A target holding unit 41 is provided between the sputtering chambers 21a and 21b. Since one target holding unit 41 is shared by the two sputtering apparatuses 40a and 40b, space saving is achieved. The target holding unit 41 has substantially the same configuration as the target holding unit 2 shown in FIG. 1, and holding surfaces 42a and 42b are provided on two opposing surfaces of the target holding unit 41, and the holding surface 42a is held by the sputtering apparatus 40a. The surface 42b is used in the sputtering apparatus 40b. Substrate holding portions 43a and 43b are provided at positions facing the holding surfaces 42a and 42b. In the transfer chambers 22a and 22b, transfer robots 44a and 44b for transferring a substrate and mounting the substrate on a substrate holding unit are provided.

  In the sputtering apparatus 40a constituting the sputtering apparatus 40, the substrate 17 is inserted into the sputtering chamber 21a from the transfer chamber 22a by the transfer robot 44a and mounted on the substrate holder 43a. The substrate 17 is sputtered by the target 18 held in advance on the holding surface 42a, then removed from the substrate holding portion 43a by the transfer robot 44a, and returned from the sputtering chamber 21a to the transfer chamber 22a.

  FIG. 9 is a cross-sectional view taken along section line A4-A4 of FIG. Of the sputtering apparatus 40, the sputtering apparatus 40a is shown. The sputtering apparatus 40a includes a cassette chamber 20a, four sputtering chambers 21a, and a transfer chamber 22a. The four sputtering chambers 21a are arranged in a straight line. The four sputtering chambers 21a are provided with holding surfaces 42a, 42c, 42d and 42e, respectively. The transfer chamber 22a is provided in parallel with the direction in which the four sputter chambers 21a are arranged, and a transfer robot 44a is provided in the transfer chamber 22a. The transfer robot 44a includes a robot arm 45 for transferring a substrate. A cassette chamber 20a is provided adjacent to the transfer chamber 22a. The substrate 17 is unloaded from the cassette chamber 20 by the robot arm 45 of the transfer robot 44a, and the robot arm 45 rotates 90 ° so that the longitudinal direction of the robot arm 45 faces the direction of the sputtering chamber 21a. The transfer robot 44a moves the substrate 17 in a direction parallel to the direction in which the four sputtering chambers 21a are arranged, stops in front of the sputtering chamber to be sputtered, and inserts the substrate 17 into the sputtering chamber. Thereafter, the substrate 17 is subjected to a sputtering process in the sputtering chamber 21a.

  The type of target to be held on each holding surface may be the same or different. If different types of targets are held on the holding surfaces of the four target holding portions, a laminated film consisting of four layers can be easily formed on the substrate. Further, if the same kind of target is held, even if there is no material for one target, sputtering can be performed with another target, so that the target replacement cycle can be lengthened.

  10 is a plan view showing the robot arm 45 and the substrate holding unit 43 of the transfer robot 44b, and FIG. 11 is a cross-sectional view taken along the cutting plane line A5-A5 of FIG. When the substrate 17 is transported by the transport robot 44 and comes on the substrate holding part 43, the pins 46 project vertically from the substrate holding part 43 toward the substrate 17 to receive the substrate 17. The positions of the pins 46 are provided at three positions on the substrate holding portion 43, but are not limited thereto. However, when the board | substrate 17 is mounted, it must be a position which the weight of the board | substrate 17 applies equally, and does not contact the robot arm 45. FIG. As shown in FIG. 10, when the pins 46 are provided so that the positions of the apexes of the equilateral triangle are three places, the above condition is satisfied and the number of the pins 46 is minimized, so that the structure of the apparatus is simplified. The Further, the height when the pin 46 protrudes is configured to be higher than that of the robot arm 45. This is because the robot arm 45 can be extracted after the substrate 17 is placed on the pins 46. When the substrate 17 is placed on the pins 46, the robot arm 45 returns to the transfer chamber 22. The pins 46 are lowered and the substrate 17 is placed on the substrate holder 43. Since the pins 46 come out, a gap is formed between the substrate 17 and the substrate holding portion 43, so that the robot arm 45 can be easily extracted after the substrate 17 is placed on the substrate holding portion 43. Further, since the pins are lowered, the substrate 17 is placed on the substrate holding portion 43 without receiving an impact, so that the substrate 17 can be prevented from being damaged.

(A) is a top view which shows the target base 1 which concerns on this invention, (b) is sectional drawing seen from cut surface line A2-A2 of Fig.1 (a). It is a perspective view which shows the target base 5 which concerns on this invention. It is a figure which shows the pipe | tube 7 which supplies and discharges cooling water. 1 is a plan view showing a sputtering apparatus 10 according to the present invention. It is sectional drawing seen from cut surface line A3-A3 of FIG. It is a figure which shows the rotating plate 32 and the light emitting / receiving sensor 33. FIG. 3 is a plan view showing a rotating plate 32. FIG. It is a figure which shows the sputtering device 40 which concerns on this invention. It is sectional drawing seen from cut surface line A4-A4 of FIG. 4 is a plan view showing a robot arm 45 and a substrate holding unit 43. FIG. It is sectional drawing seen from cut surface line A5-A5 of FIG. (A) is a top view which shows the conventional target base 101, (b) is sectional drawing seen from cut surface line A1-A1 of Fig.12 (a). It is a top view which shows the conventional sputtering device 110. FIG.

Explanation of symbols

1, 5, 11a to 11c Target base 2, 6, 41 Target holding part 2a to 2b, 6a to 6d, 12a to 12f, 42a to 42e Holding surface 3 Cooling water storage part 4 Rotating shaft 7 Tube 10, 40 Sputtering device 15 cassette holder 16 substrate holding table 17 substrate 18a-18f target 20, 20a cassette chamber 21, 21a-21e sputter chamber 22, 22a-22b transfer chamber 30 gear 31 rotation motor 32 rotation plate 32a notch 33 light emitting / receiving sensor 33a sensor Light 34 Vacuum seal 43a-43b Substrate holder 44 Transfer robot 45 Robot arm 46 Pin

Claims (9)

In a target base for holding a target used in a sputtering apparatus for forming a thin film on a substrate,
A target holding unit configured to hold the target;
A rotation shaft for rotating the target holding unit,
The target holding unit is
The shape is a polyhedron,
Configured to hold one target for one surface of the polyhedron,
A target base configured to be rotatable. The target holding unit is
The shape is a right prism,
The target base according to claim 1, wherein the target can be held on a side surface of the right prism. Cooling means for cooling the target;
The target base according to claim 1 or 2, wherein cooling water used in the cooling means is configured to be shared by a plurality of the targets.   The target base according to claim 3, wherein a part of a pipe for supplying and discharging the cooling water is the rotating shaft. In the target device in which the target is held on the target base according to any one of claims 1 to 4,
The target device is characterized in that the materials of the target are the same. In the target device in which the target is held on the target base according to any one of claims 1 to 4,
The target device is characterized in that the target material includes different materials. The target base according to any one of claims 1 to 4,
A sputtering apparatus comprising: a substrate holding portion capable of holding a substrate on which a thin film is formed. A target device according to claim 5 or 6,
A sputtering apparatus comprising: a substrate holding portion capable of holding a substrate on which a thin film is formed. In a sputtering apparatus configured to include a target holding unit,
The target holding unit is
The shape is a polyhedron,
Configured to hold one target for one surface of the polyhedron,
The target is held on at least two surfaces of the polyhedron,
A sputtering apparatus characterized in that a substrate on which a thin film is formed can be held at a position facing the target.

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