KR101686318B1 - Method and apparatus for forming an EMI-shielding layer using a sputtering process - Google Patents

Method and apparatus for forming an EMI-shielding layer using a sputtering process Download PDF

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Publication number
KR101686318B1
KR101686318B1 KR1020150015798A KR20150015798A KR101686318B1 KR 101686318 B1 KR101686318 B1 KR 101686318B1 KR 1020150015798 A KR1020150015798 A KR 1020150015798A KR 20150015798 A KR20150015798 A KR 20150015798A KR 101686318 B1 KR101686318 B1 KR 101686318B1
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South Korea
Prior art keywords
target
deposition
shielding film
deposited
target module
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KR1020150015798A
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Korean (ko)
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KR20160035534A (en
Inventor
홍상진
남창우
유충곤
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명지대학교 산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

A method of forming an EMI shielding film using sputtering and an apparatus therefor are disclosed. A shielding film forming apparatus for shielding electromagnetic waves by sputtering includes: a chamber body; And a target module positioned within the chamber body and including at least one magnet unit for generating a target and a magnetic field, wherein a shielding film is formed on at least one of an upper surface and a side surface of the deposited material by sputtering the target module .

Description

FIELD OF THE INVENTION [0001] The present invention relates to a method and apparatus for forming an EMI shielding layer using sputtering,

Disclosed is a method and apparatus for forming an EMI shielding film using sputtering.

The sputtering apparatus refers to a device for sputtering a target for a deposition process. Korean Patent Laid-Open Publication No. 2012-39856 and the like, there are many sputtering apparatuses, but a majority of the cases in which the lifetime of the target is short and the deposition thickness deviation of the deposited material is severe.

In general, when a deposition process is performed using a sputtering apparatus, the position of the target is fixed, and a shielding film is formed only on a top surface of a chip or a substrate. As a result, a problem of flowing into the chip through the side surface of the chip may occur.

The present invention also provides a method and apparatus for forming a shielding film for electromagnetic wave shielding using sputtering.

It is another object of the present invention to provide an electromagnetic wave shielding film forming method and apparatus using sputtering capable of forming a shielding film evenly on the upper surface as well as the side surface of a chip.

According to an aspect of the present invention, there is provided an apparatus and method for forming an EMI shielding film using sputtering.

According to the first embodiment, the chamber body; And a target module positioned within the chamber body and including at least one magnet unit for generating a target and a magnetic field, wherein a shielding film is formed on at least one of an upper surface and a side surface of the deposited material by sputtering the target module The shielding film forming apparatus according to the present invention can be provided. The method according to claim 1,

The target module can be positioned within a predetermined range during the sputtering process in the chamber body.

The magnet unit may be rotated or swung within a predetermined range according to the positional change of the target module.

The target module may move clockwise relative to the first position during the first deposition process and counterclockwise relative to the first position during the second deposition process.

At least one of the magnet units may have a pointed shape.

According to the second embodiment, the chamber body; And a target module located within the chamber body and including at least one magnet unit for generating a target and a magnetic field, wherein the target module moves within a predetermined range within the chamber body during the deposition process A shielding film forming apparatus can be provided.

According to a third embodiment, a chamber body; And a target module disposed within the chamber body and including at least one magnet unit for generating a target and a magnetic field, wherein a shielding film consisting of a plurality of vapor deposition films is formed on the evaporated material by a target material separated from the target Wherein the first deposition layer of the deposition layers is formed by depositing the target material on the deposition material at a first position and the second deposition layer of the deposition films is formed by depositing the target material on the deposition material 1 vapor deposition layer formed on the substrate.

According to the fourth embodiment, the target; And a magnet unit formed inside the target and generating a magnetic field, wherein a part of the magnet units has a pointed shape.

According to the fifth embodiment, the deposited material; And a shielding film formed on at least one of an upper surface and side surfaces of the material to be deposited.

The deposited material is a semiconductor chip, and the shielding film is formed on side surfaces of the deposited material, and the shielding film may be formed on the deposited material by a sputtering process.

According to a sixth embodiment, there is provided a method of manufacturing a semiconductor device, comprising: forming a first deposition layer on a top surface and at least one side surface of a material deposit with a target material separated from a target module in a first position; And forming a shielding film by forming a second evaporation film on the first evaporation film of the evaporation material with a target material separated from the target module moved from the first position to the second position. Can be provided.

Forming a third deposition layer on the second deposition layer of the deposition material with a target material separated from the target module moved from the second position to the first position after forming the second deposition layer; And forming a shielding film by forming a fourth evaporated film on the third evaporated film of the evaporated material with a target material separated from the target module moved from the first position to the third position.

The shielding film can be uniformly formed not only on the upper surface but also on the side surface of the chip, thereby shielding the electromagnetic wave flowing through the side surface of the chip There is an advantage to be able to.

1 is a cross-sectional view illustrating a shielding film forming structure for shielding electromagnetic waves according to an embodiment of the present invention;
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a shielding film forming apparatus.
3 is a view illustrating a deposition process according to positional variation of a target module for forming a shielding film according to an embodiment of the present invention.
4 is a view showing a shape of a magnet unit according to another embodiment of the present invention.
5 is a flowchart showing a process of depositing a material to be deposited using a shielding film forming apparatus according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

The present invention relates to a method and apparatus for forming a shielding film (for example, a metal film) for shielding electromagnetic interference (EMI) using a sputtering process.

Generally, the shielding film is formed only on the upper surface of the chip. In this case, electromagnetic waves may flow into the chip through the side surface of the chip.

Therefore, the shielding film may be formed on the side surface of the chip in order to shield the electromagnetic wave through the side surface of the chip. That is, the shielding film of the present invention can be formed on both the top surface and the side surfaces of the chip. Particularly, the present invention can form the shielding film in consideration of the thickness deviation and the flatness of the top and side surfaces of the chip.

According to the first embodiment, the shielding film can be sequentially formed without depositing the shielding film at once. For example, when the thickness of the shielding film formed on the upper surface of the chip is 4 탆, the shielding film forming apparatus, for example, the stirrup furring apparatus, can sequentially form the shielding film four times by 1 탆. Particularly, the shielding film forming apparatus can form shielding films four times sequentially by 1 占 퐉 while changing the position of the target module. In addition, the shielding film forming apparatus may be formed on the right side surface and the left side surface of the chip two times sequentially by 1 占 퐉.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view illustrating a shielding film forming structure for shielding electromagnetic waves according to an embodiment of the present invention.

As shown in FIG. 1, the shielding film structure 100 includes a material to be deposited 105 and a shielding film 102 formed on the material to be deposited. Here, the material to be deposited 105 may be a semiconductor chip. sure. The deposited material 105 may be variously modified in addition to a semiconductor chip, a substrate of a display panel, a semiconductor substrate, a communication device, and the like. That is, the material to be deposited 105 may be applied without limitation as long as it includes a semiconductor element.

Generally, the shielding film is formed only on the upper surface of the material to be deposited 105. This causes a problem that the electromagnetic wave flows into the inside of the chip through the side surface of the chip.

Therefore, in the first embodiment, as shown in FIG. 1, the shielding film 102 can be formed on at least one of the upper surface and the side surfaces of the material to be deposited 105. Preferably, the shielding film 102 may be formed on both the upper surface and the side surfaces of the deposited material 100.

The shielding film 102 may be formed on the outer circumferential surface of the material to be deposited 105 with a single shielding film and a plurality of shielding films may be sequentially formed along the outer circumferential surface of the material to be deposited 105.

Hereinafter, an apparatus for forming a shielding film structure as shown in FIG. 1 will be described with reference to FIG.

FIG. 2 is a view schematically showing the internal structure of the shielding film forming apparatus according to the first embodiment. FIG. 3 is a cross-sectional view of the shielding film forming apparatus according to the first embodiment. And FIG. 4 is a view showing the shape of the magnet unit according to the second embodiment.

The shielding film formed on the deposited material 105 may be formed by sputtering. Accordingly, the shielding film forming apparatus 200 described below may be a sputtering apparatus.

2, the shielding film forming apparatus 200 includes a chamber body 210, a transfer tray 215, a holder 220, a mask 225, a target module 230, and a power source 235 . Of course, the chamber body 210 may further include a gas inlet, a substrate inlet, and a gas outlet, but this is a well-known configuration and thus will not be described.

The deposited material 105 is transferred to the chamber body 210 through the transfer tray 215.

The transfer tray 215 is a means for transferring the material to be deposited 105. The transfer tray 215 can transfer the material to be deposited within a predetermined range. The transfer tray 215 can transfer the material to be deposited 105 in both directions as well as in the unidirectional direction.

That is, the transfer tray 215 may transfer the material to be deposited 105 in the second direction after transferring the material to be deposited 105 in the first direction while the deposition process is performed on the material 105. Here, the second direction may be a reverse direction of the first direction.

For example, the transfer tray 215 transfers a material to be deposited 105 on which a first deposition layer is formed in a first direction, and a second deposition layer may be formed on the first deposition layer during the transfer. Then, a third vapor deposition film is formed on the second vapor deposition film in a state where the transfer tray 215 is stopped, and then the transfer tray 215 conveys the vapor deposition material 105 on which the third vapor deposition film is formed in the second direction And the fourth deposition layer may be formed on the third deposition layer in the transfer process. A method of forming a shielding film by depositing a deposition film on the deposition target object 105 will be described in more detail with reference to FIG.

The conveying tray 215 conveys the covering material 105 in a predetermined range during the deposition process of the material to be deposited 105 to form a shielding film on at least one of the upper surface and the side surfaces of the material to be deposited 105 according to a predetermined thickness. .

The holder 220 is positioned at the lower end of the inside of the chamber body 210 and serves to support the conveyance tray 215 on which the material to be deposited 105 is placed.

In FIG. 2, the transfer tray 215 and the holder 220 are shown as separate components, but the transfer tray 215 and the holder 220 may be included in a single configuration.

Although the transport tray 215 on which the material deposit 105 is placed is arranged on the holder 220 and the transport tray 215 is moved during the deposition process in the above description, The holder 220 may be moved after being arranged on the holder 220. In other words, it is obvious to a person skilled in the art that the structure for moving the object 105 as long as the object 105 is moved during the deposition process can be variously modified, and such a modification is within the scope of the present invention.

Hereinafter, a member for moving the material to be deposited 105 will be referred to as a transfer member.

A mask 225 is arranged between the deposited material 105 and the target module 230 inside the chamber.

The mask 225 serves to form a shielding film 102 or a deposition film on a desired one of the surfaces of the material to be deposited 105 during the deposition process. This will be more clearly understood in the description of FIG. This will be more clearly understood in the description of FIG.

The target module 230 includes a target 231, which is a deposition material, and can function as a cathode. The target 231 includes a material (that is, a target material) to be deposited on the deposited material 105, and has a circular shape or the like.

This target module 230 can move within a predetermined range within the chamber. 3, the target module 230 moves from the first position to the second position during the deposition process of the material to be deposited 105, returns to the first position from the second position, To the third position.

3, the first deposition layer may be formed on the upper surface and at least one side surface of the material deposit 105 by sputtering the target module 230 at the first position.

Subsequently, the second deposition layer may be formed on the first deposition layer by moving the target module 230 from the first position to the second position and sputtering the target module 230 at the second position.

During the deposition process in which the first deposition layer and the second deposition layer are formed, the deposition target 105 can be moved by a predetermined distance in the first direction by the transfer member.

At this time, the material to be deposited 105 may be sequentially moved in the first direction by the transfer member, and may be moved after each deposition process is completed in a predetermined interval.

Thus, when the first deposition process and the second deposition process are completed, the target module 230 returns again from the second position to the first position, and as the target module 230 is sputtered at the first position, A third deposition layer may be formed on the deposition layer.

After the third vapor deposition layer is formed, the target module 230 moves from the first position to the third position, and the fourth vapor deposition layer may be formed on the third vapor deposition layer by sputtering the target module 230 at the third position.

As described above, the shielding film may be formed on at least one of the upper surface and the side surfaces of the material to be deposited 105 depending on the position of the target module 230.

Also, although not shown in detail in FIG. 2, the target 231 included in the target module 230 can rotate within a predetermined range during the sputtering process. The rotation range of the target module 230 may be, for example, 0 to 360 degrees.

By rotating the target 231 within a predetermined range during the sputtering process, the target 231 can be uniformly sputtered, and as a result, the life of the target 231 can be prolonged.

The target module 230 may include a backing plate and a magnet portion 233 as shown in FIG.

The backing plate 232 serves to support the target 231, and is made of metal. Backing plate 232 may have a circular, oval shape. Power is directly or indirectly applied to the backing plate 232 from the power supply 235, so that the backing plate 232 can function as a cathode.

The target 231 may be formed on the outer peripheral surface of the backing plate 232.

Accordingly, the target 231 may be rotated or / and its position may be varied by itself, but the target 231 may also be rotated or varied in position as the backing plate 232 rotates and / or changes position.

The magnet portion 233 includes at least one magnet unit 233-1. The magnet portion 233 is positioned on the opposite side of the target 231 with respect to the backing plate 232.

The magnet unit 233-1 may have NSN polarity. That is, the magnet unit 233-1 is a device for generating a magnetic field, and may be a permanent magnet or an electromagnet. Further, the magnet unit 233-1 may be arranged to face the material to be deposited 105.

Since the magnet unit 233-1 generates a magnetic field, ions depending on the glow discharge are concentrated in the magnetic field region, and the range of deposition in which the target material classified from the target 231 spreads can be determined.

2, the magnet unit 233 includes one magnet unit 233-1, but it is to be understood that the magnet unit 233 may include a plurality of magnet units.

Further, the magnet portion 233 may be rotated by itself or may swing within a certain range.

According to the first embodiment, since the deposition layer is formed on at least one of the upper surface and the side surfaces of the material to be deposited 105, the magnet portion 233 may be rotated 360 degrees so as to facilitate side deposition as shown in FIG. 3 .

As another example, a part of the configuration of the magnet portion 233 may have a pointed shape toward the deposited material 105 (see FIG. 4). Generally, the magnet unit included in the magnet unit 233 has a rectangular shape. However, when the magnet unit 233-1 is formed in a rectangular shape, it is difficult to clearly set the magnetic field range or the deposition range. As a result, it is difficult to control the thickness of the side shielding film of the deposited material.

Accordingly, as shown in FIG. 4, a part of the magnet unit 433-1 may be formed into a sharp shape in the direction of the material to be deposited 105 so that the magnetic field range or the deposition range can be clearly set. As a result, there is an advantage that the thickness of the shielding film deposited on the side surface of the deposited material 105 can be easily controlled. For example, with reference to FIG. 4, the outermost portion of the magnet unit 433-1 may be pointed.

Through this, the shielding film forming apparatus 200 can form the deposition film (i.e., shielding film) deposited on the side surfaces of the material to be deposited 105 with a desired thickness. On the other hand, the magnet unit 433-1 may have a triangular shape or a structure which is not sharp, but has a trapezoidal shape, for example, smaller than the bottom width.

According to one embodiment, the position of the magnet portion 233 can be varied according to the positional variation of the target module 230.

In addition, the position of the magnet unit 233 can be changed according to the position of the target module 230.

The power supply unit 235 functions to provide a power source for operating the internal configuration of the shielding film forming apparatus 200.

5 is a flowchart illustrating a process of depositing a material to be deposited using a shielding film forming apparatus according to an embodiment of the present invention. 5, a deposition film of 4 mu m is formed on the upper surface of the deposit 105, and a deposition film of 2 mu m is formed on each side of the deposition target 105 to form a shielding film. In addition, it is assumed that a deposition film of 1 mu m is formed on at least one of the upper surface and the side surface in each deposition process described below.

In step 510, the inner chamber of the shielding film forming apparatus 200 is changed to a vacuum state and a sputtering gas is injected into the chamber. Here, the sputtering gas may be, for example, argon (Ar) gas, which is an inert gas.

The sputtering gas is ionized by a glow discharge caused by a potential difference between the cathode and the anode. That is, the sputtering gas is changed into a plasma state.

In step 515, the shielding film forming apparatus 200 generates a magnetic field to concentrate the ions, and the ions sputter the target.

The shielding film forming apparatus 200 rotates the target so that the target is uniformly sputtered. That is, the ions generated by the ionization collide with the surface of the target, thereby causing the target material (i.e., deposition material) separated from the target to be deposited into the deposition material. At this time, due to the magnetic field generated by the magnet unit, most of the ions are concentrated in the deposition range, collide with the target, and the corresponding portion is sputtered.

Accordingly, when the shielding film forming apparatus 200 rotates the target, the target can be uniformly sputtered, and as a result, the whole target is uniformly sputtered during the deposition process, thereby extending the life of the target.

Further, when the lifetime of the target becomes longer, the cost of the shielding film forming apparatus can be reduced as a result.

The magnet section also rotates or swings while the target rotates.

The reason why the magnet portion 233 is rotated or swung with the rotation of the target 231 is that the plasma region is wider than the magnet portion 233 does not rotate or swing while the target 231 rotates.

That is, by rotating or swinging the magnet unit 233 together with the rotation of the target 231, the angle of incidence of the target material (deposition material) can be advantageously widened. In addition, there is an advantage that the deviation of the deposition thickness of the shielding film deposited on the top and sides of the deposition target can be reduced by not rotating the swinging magnet 233 together with the target 231 to fix the angle of incidence of the target material .

The shielding film forming apparatus 200 places the target module 230 in the first position and then sputteres the target module 230 to remove the target material separated from the target 231 from the upper surface of the deposited material 105 A first deposition layer is formed on at least one side surface (first deposition process).

The deposited material 105 can be moved in the first direction while the target module 230 is sputtered at the first position.

Alternatively, the shielding film forming apparatus 200 may be configured such that when the deposition process of the material to be deposited 105 is completed in accordance with the sputtering process of the target module 230 at the first position, the transfer material on which the material to be deposited 105 is placed is moved in the first direction Quot ;. < / RTI >

According to the first deposition process, a deposition film having a thickness of 1 mu m may be formed on the upper surface and the right surface of the material to be deposited 105, respectively.

During such a deposition process, the target 231 may continue to rotate and the magnet portion 233 may also swing at a specified angle while the target 231 is rotating.

The shielding film forming apparatus 200 moves the target module 230 from the first position to the second position after the first deposition process is completed and the target module 230 is sputtered at the second position, Thereby forming a second deposition film (second deposition process).

When the first deposition layer is formed according to the first deposition process, the target module 230 is moved from the first position to the second position to form a second deposition layer on the first deposition layer. Here, the second position may be a designated position 45 degrees downward from the first position.

As the target module 230 moves from the first position to the second position, the magnet portion 233 may rotate to adjust the deposition range of the target material.

As a result of the second deposition process, a deposition film of 2 탆 is formed on the upper surface of the deposited material 105, and a deposition film of 1 탆 is formed on the left side and the right side.

During the second deposition process, the transport tray 215 on which the deposit 105 is placed can be moved by a predetermined interval in the first direction.

Of course, as with the first deposition process, once the second deposition process is completed, the transfer member on which the material to be deposited 105 is placed can be moved by a designated section in the first direction.

After the second deposition process is completed, the shielding film forming apparatus 200 returns the target module 230 to the first position from the second position in step 530, and, by sputtering the target module 230 in the first position, 2 vapor deposition film (third vapor deposition process).

In the third deposition process, the conveying member on which the material to be deposited 105 is placed can move the object to be deposited 105 in a second direction opposite to the first direction by a designated interval. Similarly, after the third deposition process is completed, the transfer member on which the deposition target 105 is placed may move the target material 105 in a second direction opposite to the first direction by a predetermined interval.

In addition, the magnet section 233 may also be rotated by a designated section to adjust the deposition range of the material to be deposited 105 as the target module 230 moves from the second position to the first position.

According to the third deposition process, a deposition film having a thickness of 1 mu m may be further formed on the upper surface and the right side surface of the material to be deposited 105, respectively. As a result, a deposited film of 3 mu m is formed on the upper surface of the deposited material, a deposited film of 1 mu m is formed on the left surface, and a deposited film of 2 mu m is formed on the right surface.

Finally, in step 535, the shielding film forming apparatus 200 moves the target module 230 from the first position to the third position when the third deposition process is completed, and sputtering the target module 230 at the third position, 3 A fourth evaporation film is formed on the evaporation film to form a shielding film.

(Not shown) positioned within the target module 230 to adjust the deposition range in which the target material is deposited on at least one of the top and sides of the material to be deposited 105 as the target module moves from the first position to the third position. (233) also rotates by the designated section.

As a result of sputtering the target module 230 at the third position after adjusting the deposition range in accordance with the rotation of the magnet part 233, deposition of 1 탆 is further formed on the upper and left surfaces of the material to be deposited 105 .

As a result, a deposition film of 4 mu m is formed on the upper surface of the deposited material, and a deposition film of 2 mu m is formed on the left and right surfaces, respectively.

In this manner, the thickness of the shielding film formed on the side surface of the deposited material can be adjusted to a desired thickness by changing the position of the target module, rotating the magnet portion, and moving the deposited material in a scan mode.

Further, as described above, the thickness of the shielding film formed on the side surface of the evaporated film can be precisely controlled by implementing a part of the magnet portion 233 in a pointed shape.

Meanwhile, a method of forming an EMI shielding film using sputtering according to an embodiment of the present invention may be implemented in a form of a program command that can be executed through a variety of means for electronically processing information, and may be recorded in a storage medium. The storage medium may include program instructions, data files, data structures, and the like, alone or in combination.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention as defined in the appended claims. It will be understood that the invention may be varied and varied without departing from the scope of the invention.

200: Shielding film forming device
210: chamber body
215: Feed tray
220: Holder
225: Mask
230: target module
231: Target
232: backing plate
233: Magnet portion
233-1: Magnet unit
235:

Claims (14)

Chamber body; And
A target module positioned within the chamber body and including at least one magnet unit for generating a target and a magnetic field,
A shielding film is formed on at least one of the upper surface and the side surfaces of the deposited material by sputtering the target module,
Wherein the target module is displaced within a predetermined range within the chamber body during a sputtering process and is moved to a clockwise downwardly biased position relative to a first position during a first deposition process, Is moved to a third position that is counterclockwise left-downward with respect to the first position. delete The method according to claim 1,
Wherein the magnet unit is rotated or swung within a predetermined range according to a position of the target module. delete The method according to claim 1,
Wherein at least one of the magnet units has a pointed shape. delete delete Chamber body; And
A target module positioned within the chamber body and including at least one magnet unit for generating a target and a magnetic field,
A shielding film made of a plurality of evaporation films is formed on the evaporation material by a target material separated from the target,
Wherein a first deposition layer of the deposition layers is formed by depositing the target material on the deposition material at a first position, and a second deposition layer of the deposition layers is formed so that a position of the target module is clockwise And the target material is deposited on the first deposition layer of the deposited material as the second target is varied to a second position that is downwardly shifted to the right or to a third position that is counterclockwise leftwardly downward with respect to the first position. . 9. The method of claim 8,
Wherein at least one of the magnet units has a pointed shape. In the target module,
target; And
And magnet units formed inside the target and generating a magnetic field,
Some of the magnet units have a pointed shape,
The target module is displaced within a predetermined range within the chamber body during the sputtering process and is moved to a second clockwise downward position relative to the first position during the first deposition process and during a second deposition process And the second position is moved to a third position that is counterclockwise left and down with respect to the first position. delete delete Forming a first deposition layer on a top surface and at least one side of a deposition material with a target material separated from a target module at a first location;
Forming a second evaporation layer on the first evaporation layer of the evaporation material with a target material separated from the target module moved from the first position to a second downwardly directed position to form a shielding film;
Forming a third deposition layer on the second deposition layer of the deposition material with a target material separated from the target module moved from the second position to the first position; And
And forming a shielding film by forming a fourth deposition layer on the third deposition layer of the material to be deposited with a target material separated from the target module moved from the first position to a third position that is moved downward to the third position. / RTI > delete
KR1020150015798A 2014-09-23 2015-02-02 Method and apparatus for forming an EMI-shielding layer using a sputtering process KR101686318B1 (en)

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Application Number Priority Date Filing Date Title
KR1020140126617 2014-09-23
KR20140126617 2014-09-23

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KR101686318B1 true KR101686318B1 (en) 2016-12-13

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