WO2014083623A1 - Dispositif de traitement par plasma - Google Patents

Dispositif de traitement par plasma Download PDF

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Publication number
WO2014083623A1
WO2014083623A1 PCT/JP2012/080670 JP2012080670W WO2014083623A1 WO 2014083623 A1 WO2014083623 A1 WO 2014083623A1 JP 2012080670 W JP2012080670 W JP 2012080670W WO 2014083623 A1 WO2014083623 A1 WO 2014083623A1
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WO
WIPO (PCT)
Prior art keywords
discharge
plasma
frequency
power
frequency power
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Application number
PCT/JP2012/080670
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English (en)
Japanese (ja)
Inventor
小林　浩之
山本　治朗
匠 丹藤
永石　英幸
石井　英二
Original Assignee
株式会社日立製作所
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Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to PCT/JP2012/080670 priority Critical patent/WO2014083623A1/fr
Publication of WO2014083623A1 publication Critical patent/WO2014083623A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2439—Surface discharges, e.g. air flow control

Definitions

  • the present invention relates to a plasma processing apparatus for performing plasma processing on a material surface or gas using plasma.
  • Patent Document 1 describes a surface discharge type plasma processing apparatus having an arbitrary shape and a large area and capable of performing plasma processing on an object to be processed.
  • a surface discharge type plasma source in which antennas and ground wires are alternately arranged in one dielectric material can generate a large-area plasma.
  • discharge electrode plate since the generation of plasma is concentrated on the surface of the discharge electrode plate, the distance between the object to be processed and the discharge electrode plate is necessary in order to exert a sufficient effect on the object to be processed (gas or solid). Need to be small. However, depending on the characteristics of the object to be processed and the configuration of the processing apparatus, the plasma irradiation distance may not be sufficiently small.
  • the film is considered to be a discharge electrode in consideration of film deflection. It is necessary to manage the gap between the film and the discharge electrode plate with a certain margin so as not to contact the plate. For this reason, the plasma irradiation distance (distance between the object to be processed and the discharge electrode plate) cannot be reduced to any extent, and a plasma processing apparatus that enhances the effect of plasma processing by factors other than adjustment of the irradiation distance is desired.
  • An object of the present invention is to provide a plasma processing apparatus capable of improving throughput (speeding up processing).
  • the feature of the present invention is that (1) a surface discharge type discharge electrode in which two types of electrode wires are alternately arranged in parallel in a dielectric; A high frequency power supply for plasma generation; A high frequency power control device for determining the discharge frequency,
  • the characteristic curve of the discharge electrode includes a first discharge region in which a change in discharge voltage is small even when the discharge power is increased, and a rate of increase in discharge voltage that is greater than that in the first discharge region as the discharge power is increased.
  • the high-frequency power source generates discharge power based on information determined by the high-frequency power control device,
  • the high-frequency power control device determines a discharge voltage V in the second discharge region exceeding the inflection point when the maximum discharge power allowed by the object to be processed or the discharge electrode is E, and the discharge frequency is
  • the plasma processing apparatus is determined based on the maximum discharge power E and the discharge voltage V.
  • the high-frequency power source adjusts the discharge power by turning on the high-frequency power for a certain time or turning it off for a certain time and changing the wave number of the high-frequency power per unit time.
  • a net or a projection for generating a turbulent flow in the vicinity of the discharge electrode may be installed in the flow path of the processing gas.
  • the surface of the discharge electrode may be coated with an ozone decomposition catalyst.
  • a typical example of the plasma processing apparatus of the present invention is as follows.
  • the plasma processing apparatus of the present invention is A surface discharge type discharge electrode plate in which an antenna and a ground are alternately arranged in a dielectric; A high frequency power source for supplying high frequency power for generating plasma; A control unit for controlling the high-frequency power source, The high-frequency power source can adjust the discharge power by changing the frequency substantially by adjusting the ON time and OFF time of the high-frequency power, The control unit is configured to first set a discharge voltage and then set an ON time and an OFF time of the high frequency power based on the characteristic data of the discharge electrode plate.
  • the processing effect (throughput of the object to be processed) can be increased.
  • the control unit 12 includes a processing condition determining unit 40 for determining an optimum irradiation condition. In the processing condition determining unit, the discharge frequency, the discharge voltage, the gap (irradiation distance), and the conveyance speed of the object to be processed are determined.
  • 1 is a schematic diagram of a high frequency power supply according to a first embodiment of the present invention showing one method.
  • FIG. 6 is a schematic diagram of a high-frequency power supply according to the first embodiment of the present invention, showing another method in which the discharge voltage and discharge frequency information is converted into a digital signal by the discharge frequency control signal generation unit 41. is there. It is the schematic explaining the adjustment method of the frequency of the high frequency electric power used as the 1st Example of this invention which makes the state where the time per period is T1 an initial stage. It is the schematic explaining the adjustment method of the frequency of the high frequency electric power used as the 1st Example of this invention which lengthens the time of 1 frequency to T2, and lowers a frequency from the initial state.
  • the high frequency power according to the first embodiment of the present invention is set to intermittent operation, such as discharging for a certain time T3 and resting for a certain time T4.
  • Schematic for explaining the relationship between discharge power and discharge voltage in a surface discharge type plasma source showing the relationship between the electric power (horizontal axis) applied to the discharge power source and the voltage (vertical axis) applied to the discharge electrode. It is.
  • a surface discharge type plasma source showing the relationship between the power applied to the discharge power source (horizontal axis) and the voltage applied to the discharge electrode (vertical axis) under three conditions with substantially different discharge frequencies
  • It is the schematic for demonstrating the increase method of the discharge electric power used as the 1st Example of this invention which shortens the time T12 of 1 period, and increases the frequency
  • Discharge according to the first embodiment of the present invention in which one cycle time T13 is the same as T11, the voltage V1 is increased to V3, and the discharge voltage is increased by increasing the discharge region at the time of one plasma lighting.
  • FIG. 1 shows a plasma processing apparatus having a plurality of surface discharge type plasma modules, and mainly shows an outline of an apparatus for modifying the surface of an object to be processed.
  • the plasma processing apparatus 31 has a plurality of plasma modules 1 installed in a housing (processing chamber) 34.
  • the workpiece 6 is conveyed in the processing chamber by the roller 32.
  • a processing gas such as dry air, rare gas, or oxygen gas is supplied to the processing chamber by a processing gas supply system 37 to the plasma discharge region. Further, an exhaust means 38 is provided for exhausting the supplied processing gas.
  • a gas atmosphere switching unit 33 for separating the outside air and the atmosphere in the processing chamber is installed at the inlet or outlet of the workpiece. In order to adjust the irradiation distance of the plasma 3 generated by the plasma module 1 to the object 6 to be processed, the plasma module 1 or the roller 32 can be moved up and down (up and down movement mechanisms are not shown).
  • the plasma module 1 has a configuration in which antenna wires 4-1 and ground wires 4-2 (electrodes 4) are alternately arranged inside the dielectric 5, as shown in FIG.
  • the plasma is generated by the electric field which is oozed on the surface dielectric layer of the discharge electrode plate among the electric field formed between the antenna wire 4-1 and the ground wire 4-2.
  • the plasma mainly includes a plasma generation region 61 and an afterglow region 62 in which the plasma generated in the plasma generation region spreads by diffusion.
  • plasma can be generated in the atmosphere with a discharge voltage of about 2 kV.
  • the discharge frequency is preferably several kV to several hundred kV. It is desirable to use a ceramic such as glass or alumina as the dielectric material.
  • the time change of plasma generation is ignited when the voltage of the discharge power fluctuates positively as shown in FIG. 4, and then plasma generation occurs as the voltage decreases. Stop. Then, when the voltage swings sufficiently to the minus side, plasma generation is started again, and when the voltage swings from the minus side to the plus side, the plasma generation stops. That is, plasma is generated twice in one cycle of high-frequency discharge power.
  • the discharge power source (high frequency power source) 11 generates power for plasma generation, and the frequency of the discharge power (hereinafter also including the meaning as the wave number of the high frequency power per unit time. Details will be described later) is determined by the control unit 12. Is done.
  • the control unit 12 includes a processing condition determination unit 40 for determining an optimum irradiation condition.
  • the processing condition determination unit the discharge frequency, the discharge voltage, the gap (irradiation distance).
  • discharge power, motor control of the roller 32, and gap control are performed.
  • details of the control of the discharge power will be described.
  • the analog signal generation unit 43 based on the signal from the processing condition determination unit 40 for determining the optimum irradiation condition incorporated in the control unit 12, the analog signal generation unit 43 generates low voltage high frequency power.
  • the booster circuit 16 generates DC power that is converted into discharge power. Both of these two electric powers are transmitted to the high frequency power supply 11 of a plurality of plasma modules.
  • a low-voltage, high-frequency signal drives the switching circuit 44, and in response thereto, the booster circuit 16 boosts the voltage according to the DC power voltage supplied from the analog signal generation unit (circuit) 43.
  • the configuration of FIG. 5A is applied to a separately excited inverter circuit, for example.
  • information on the discharge voltage and the discharge frequency is converted into a digital signal by the digital signal generation unit 41.
  • This signal is transmitted to the digital signal processing unit 42 of the high frequency power supply 11 installed in the plurality of plasma modules 1, and the signal processing unit 42 controls the booster circuit 16 to generate high frequency and high voltage discharge power.
  • a state in which the time per cycle is T1 is set as an initial state.
  • the time T1 per cycle does not change, but discharge is performed for a certain time T3, and the operation is intermittent for a certain time T4.
  • the number of times of swinging positively and negatively per unit time may be decreased. In this case, since the wave number of the high-frequency power when accumulated for a sufficiently long time is reduced, it is substantially equivalent to lowering the frequency.
  • a method of adjusting the ON time T3 and the OFF time T4 is expressed as “substantially changing the frequency” or “adjusting the ON time and the OFF time”.
  • the method of FIG. 6C may be simple.
  • the booster circuit 16 for generating discharge power has a primary side 45 of the booster circuit and a secondary side 46 of the booster circuit, and the impedance Z1 of the secondary electrode and the impedance Z2 of the discharge electrode 2 including the plasma and the power supply cable.
  • the power efficiency (the ratio of the power used for plasma generation out of the supplied power) becomes high when the two match.
  • the impedances Z1 and Z2 are greatly different from each other, the ratio of power lost in the discharge power source 11 such as a booster circuit is increased (power efficiency is lowered), and plasma is not generated at all depending on conditions. .
  • a plurality of plasma modules each including the discharge electrode 2 and the discharge power source 11 are arranged to generate plasma having an area of an arbitrary size.
  • This advantage is shown in FIG. 7B.
  • the area of the discharge electrode 2 is larger than that in FIG. 7A.
  • the impedance changes from Z2 to another value Z3, and a deviation from the impedance Z1 on the secondary side of the discharge power supply occurs. That is, it is necessary to adjust the impedance Z1 on the secondary side of the discharge power supply 11.
  • the length Lw of the power supply cable 18 is different for each discharge electrode, the plasma side viewed from the power source side Since the impedance changes, plasma generation is not uniform between the discharge electrodes. For this reason, the lengths Lw of the plurality of power supply cables 18 must be equal to each other. However, it is preferable that the length Lw of the power supply cable 18 is short because power loss in the power supply cable is reduced.
  • power is supplied from a single large power source to a plurality of discharge electrodes with a short power supply cable having the same length. It is structurally difficult to do.
  • the discharge electrode 2 and the discharge power supply 11 are assembled in one module and a plurality of them are arranged, there is an advantage that the length of the power supply cable can be shortened and can be made uniform between the modules.
  • FIG. 8A shows the relationship between the power (horizontal axis) applied to the discharge power supply and the voltage (vertical axis) applied to the discharge electrode 2.
  • a discharge may be generated momentarily and locally, but this discharge does not continue stably.
  • the inflection point X appears and enters the region B (first discharge region).
  • the discharge voltage gradually rises as the discharge power increases.
  • the plasma is generated sparsely on the discharge electrode plate in the range b1 where the discharge power is relatively small, and the discharge is stably maintained at the place where the plasma is once generated.
  • the discharge power is further increased, the entire surface of the discharge electrode plate is gradually turned on, and in the region b2, it is visually observed that the plasma is uniformly discharged over the entire discharge electrode.
  • the horizontal axis represents discharge power as the input power to the high-frequency power source.
  • regions B and C when the discharge power is increased, the power absorbed by the plasma is obtained. Therefore, with the exception of region A, a similar diagram can be drawn with the horizontal axis representing the power used for plasma generation.
  • the plasma generation region 61 is located away from the object 6, and only the after glow region 62 is the object 6 to be processed.
  • the frequency is increased, the number of plasma irradiations (irradiation amount) in the afterglow region increases. In this case, among the active species generated in the plasma generation region 61, those having a short lifetime are unlikely to reach the object 6 to be processed.
  • the plasma generation region 61 reaches the object 6 to be processed, so that the number of plasma irradiations per unit time (the number of discharges) does not change.
  • the number of plasma irradiations per unit time the number of discharges
  • the plasma discharge power when the object to be treated is a material with low heat resistance such as resin, the plasma discharge power must be kept below a certain level. Naturally, in order to suppress excessive heating of the discharge electrode, the discharge power must be a certain value or less. Therefore, in order to maximize the throughput, first, the maximum input power E is determined from the viewpoint of the heat resistance of the object 6 and the discharge electrode 2 and the like. At the same time, the discharge voltage V is determined. Finally, the discharge frequency f is determined to be as large as possible within a range where the discharge power does not exceed E. As shown in FIG. 6C, the circuit constants of the discharge power source 11 are set such that the wave number of unit time is changed by substantially turning on or off for a certain time to substantially change the discharge frequency and drive at the assumed maximum frequency. Set. Then, the discharge voltage V is first determined by the control unit 12, and thereafter, the length of the ON time with respect to the OFF time is made as long as possible within the range of the input power allowed by the workpiece.
  • FIG. 8B is a schematic diagram showing the relationship between the discharge power and the discharge voltage as in FIG. 8A, and shows three conditions with different substantial discharge frequencies.
  • the efficiency ratio of discharge power used for plasma generation
  • the characteristic curve T in FIG. 8B the characteristic curve S shows a case where the substantial discharge frequency is reduced
  • the characteristic curve U shows a case where the substantial discharge frequency is increased.
  • the substantial frequency is lowered to set the discharge power to I, for example.
  • the target discharge power E is higher than J, the substantial discharge frequency may be increased and the discharge power may be set to K, for example.
  • FIG. 11 shows an outline of a plasma processing apparatus 70 for performing plasma processing on a gas.
  • the plasma processing apparatus 70 is installed in the middle of the gas pipe 73.
  • the gas to be processed may be air or another gas.
  • the purpose of the treatment may be sterilization treatment of bacteria and viruses floating in the gas, in addition to decomposition, polymerization, and modification of molecules in the gas.
  • the plasma processing apparatus 70 is provided with a protrusion 74 for adjusting the gas flow 71.
  • the protrusions 74-1 are disposed to face the discharge electrode plate 2 so that the gas passage is as close to the discharge electrode plate 2 as possible.
  • projections 74-2 are installed at positions opposite to the projections 74-1.
  • the generation of the turbulent flow allows the gas to efficiently pass through the plasma.
  • the frequency is not increased as shown in FIG. 9B, but the discharge voltage is changed as shown in FIG. 9C.
  • the plasma generation range is widened so that the gas to be processed is irradiated as widely as possible. That is, by combining the expansion of the plasma generation range and the gas flow agitation effect by the turbulent flow 72, the efficiency of the plasma treatment for the treatment gas can be increased.
  • a net 76 is installed on the upstream side of the discharge electrode plate 2, and the turbulent flow 72 is generated when the processing gas passes through the net. It is good as a method. Further, other turbulent flow generation methods may be used as long as the turbulent flow 72 can be generated on the surface of the discharge electrode.
  • the discharge frequency is increased, and the plasma generation region is brought into contact with the object to be processed as much as possible without increasing the discharge frequency.
  • the effectiveness of the discharge power may be desirable to increase the discharge power by substantially increasing the discharge frequency without excessively increasing the discharge voltage.
  • FIG. 13 shows a plasma processing apparatus using a substrate transmission type surface discharge method in which the back surface side of the object to be processed 6 is substantially in contact with the discharge electrode plate 2 and plasma is generated on the front side of the object to be processed. Used for processing.
  • the frequency is substantially increased rather than increasing the discharge voltage and extending the plasma generation region to a position away from the surface of the object to be processed.
  • the discharge voltage is preferably kept at the voltage R1 at the inflection point Y in FIG. 8A or slightly higher than R1.
  • the circuit constants of the discharge power supply 11 are set in advance so that the discharge can be performed at a high frequency, and as shown in FIG. It is preferable to employ a method of controlling the frequency substantially in the same way as lowering the frequency and increasing the substantial frequency as much as possible.
  • FIG. 14 shows a case where a coating layer having a catalytic effect is formed on the surface of the discharge electrode.
  • an ozone decomposition catalyst is assumed.
  • a layer of TiO, ZnO, MnO or the like is used as the catalyst layer 75. Is formed.
  • the configuration of the plasma processing apparatus is the same as that of FIG. 1, FIG. 11, or FIG. When a gas containing air or oxygen is used as the processing gas, oxygen molecules are dissociated in the plasma to generate oxygen atoms, and the oxygen atoms are combined with other oxygen molecules to generate ozone.
  • direct irradiation with oxygen atoms may be more effective than ozone.
  • ozone generated in the plasma causes a decomposition reaction in the surface catalyst layer to generate oxygen atoms. Therefore, in order to increase the density of oxygen atoms, it is desirable to concentrate the plasma generation region as much as possible on the surface of the catalyst layer of the discharge electrode in the vicinity of the ozone decomposition catalyst.
  • the discharge power of the plasma is increased by substantially increasing the discharge frequency, rather than increasing the discharge voltage. May be desirable.
  • the secondary side impedance Z1 and the discharge electrode side impedance Z2 of the booster circuit 16 may not be easily adjusted by changing the circuit constant of the discharge power source, that is, changing the capacitance of the coil or capacitor element.
  • a coil having a very large size, a capacitor having an extremely large or small capacity, or a capacitor having a withstand voltage higher than the discharge voltage must be used for the discharge power supply 11.
  • the frequency can be substantially simply changed according to the processing by simply changing the setting of the ON time T3 and the OFF time T4 in FIG. 6C. There is an advantage that it can be set.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un dispositif de traitement par plasma qui comprend : une électrode de décharge de type à décharge de surface pour laquelle deux types de lignes d'électrode sont disposées en parallèles l'une à l'autre à l'intérieur d'un diélectrique ; une alimentation électrique à haute fréquence pour la génération de plasma ; et un dispositif de régulation de puissance à haute fréquence qui détermine une fréquence de décharge. La courbe caractéristique pour l'électrode de décharge présente une première région de décharge dans laquelle la variation de la tension de décharge résultant de l'augmentation de la puissance de décharge est faible, une deuxième région de décharge dans laquelle le facteur de croissance de la tension de décharge qui accompagne une augmentation de la puissance de décharge est supérieur à celui de la première région de décharge, et un point de transition entre la première région de décharge et la deuxième région de décharge. L'alimentation électrique à haute fréquence génère la puissance de décharge en se basant sur les informations déterminées par le dispositif de régulation de puissance à haute fréquence. Lorsque la puissance de décharge maximale admissible pour un article à traiter ou de l'électrode de décharge est E, le dispositif de régulation de puissance à haute fréquence détermine une tension de décharge V dans la deuxième région de décharge de telle sorte que le point de transition est dépassé et la fréquence de décharge est déterminée en se basant sur la puissance de décharge maximale E et la tension de décharge V.
PCT/JP2012/080670 2012-11-28 2012-11-28 Dispositif de traitement par plasma WO2014083623A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105848397A (zh) * 2016-05-27 2016-08-10 北京睿昱达科技有限公司 一种柔性放电电极结构的等离子体消毒灭菌装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105848397A (zh) * 2016-05-27 2016-08-10 北京睿昱达科技有限公司 一种柔性放电电极结构的等离子体消毒灭菌装置

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