WO2014074521A1 - Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith - Google Patents

Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith Download PDF

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Publication number
WO2014074521A1
WO2014074521A1 PCT/US2013/068523 US2013068523W WO2014074521A1 WO 2014074521 A1 WO2014074521 A1 WO 2014074521A1 US 2013068523 W US2013068523 W US 2013068523W WO 2014074521 A1 WO2014074521 A1 WO 2014074521A1
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WO
WIPO (PCT)
Prior art keywords
less
grooves
concentricity
center
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2013/068523
Other languages
English (en)
French (fr)
Inventor
Ching-Ming Tsai
Shi-wei CHENG
Kun-Shu YANG
Jia-Cheng Hsu
Sheng-huan LIU
Feng-Chih Hsu
Craig KOKJOHN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Priority to CN201380058083.3A priority Critical patent/CN104781913B/zh
Priority to KR1020157014705A priority patent/KR102148050B1/ko
Priority to SG11201503496YA priority patent/SG11201503496YA/en
Priority to US14/440,209 priority patent/US9687956B2/en
Priority to JP2015541855A priority patent/JP6336997B2/ja
Publication of WO2014074521A1 publication Critical patent/WO2014074521A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting

Definitions

  • CMP Chemical-mechanical polishing
  • the manufacture of semiconductor devices generally involves the formation of various process layers, selective removal or patterning of portions of those layers, and deposition of yet additional process layers above the surface of a semiconducting substrate to form a semiconductor wafer.
  • the process layers can include, by way of example, insulation layers, gate oxide layers, conductive layers, layers of metal or glass, and the like.
  • the uppermost surface of the process layers is desirably planar, i.e., flat, for the deposition of subsequent layers.
  • CMP is used to planarize process layers wherein a deposited material, such as a conductive or insulating material, is polished to planarize the wafer for subsequent process steps.
  • a wafer is mounted upside down on a carrier in a CMP tool, A force pushes the carrier and the wafer downward toward a polishing pad.
  • the carrier and the wafer typically are rotated above the rotating polishing pad on the CMP tool's polishing table.
  • a polishing composition (also referred to as a polishing slurry) generally is introduced between the rotating wafer and the rotating polishing pad during the polishing process.
  • the polishing composition typically contains one or more chemicals that interact with or dissolve portions of the uppermost wafer iayer(s) and one or more abrasive materials that physically remove portions of the layer(s).
  • the wafer and the polishing pad can be rotated in the same direction, in opposite directions, or one of the wafer or polishing pad can be rotated while the other one of the wafer or polishing pad remains stationary.
  • the carrier also can oscillate across the polishing pad on the polishing table. The rotation scheme is chosen according to the particular polishing process being carried out.
  • the polishing pad typically is made of a rigid, micro-porous material, and the polishing pad typically performs several useful functions durin a polishing process, such as polishing slurry transport, distribution of applied pressure across a substrate to be polished, and removal of material abraded from substrate.
  • the physical and mechanical properties of the polishing pad such as the polishing pad material, the surface topography of the polishing pad (e.g., micro- and macro- structures, such as perforations., pores, textures, grooves, depressions, etc.), arid the Hke, in combination with the properties of the composition of the polishing slurry (e.g., reactivity, abrasiveness, etc), can affect various aspects of the CMP process, including the polishing rate and the quality of the polished substrate (e.g., degree of planarity., and number and type of defects).
  • the polishing rate in particular, directly relates to the throughput of the CMP process, such that the polishing rate is important for cost-of-ownership considerations,
  • Patent 6,520,847 to Osterheid et al.j other properties of the polishing process, such as the polishing rate of the substrate, generally have not been adequately improved by conventional grooving patterns to sufficiently increase throughput, while still achieving a polished substrate with a high level of planarity and low defects.
  • many conventional grooving patterns are not adequate for retaining the polishing slurry on the polishing pad for a sufficient amount of time, thereby requiring a larger amount of poli shing slurry to be used in a polishing process, whic h undesirably adds to the overall manufacturing costs.
  • the invention provides a polishing pad comprising, consisting essentially of, or consisting of an axis of rotation, a polishing surface, and a pl urality of grooves set into the polishing surface, wherein the plurality of grooves is composed of at least (a) a first plurality of concentric grooves having a first center of concentricity, and (b) a second plurality of concentric grooves ' having a second center of concentricity, and wherein (1 ) the first center of concentricity is not coincident with the second center of concentricity, (2) the axis of rotation of the polishing pad is not coincident with at least one of the first center of concentricity and the second center of concentricity, (3) the plurality of grooves does not consist of a continuous spiral groove, and (4) the polishing surface does not comprise a mosaic groove pattern.
  • (00071 3 ⁇ 4e invention also provides a method of chemical-mechanicaliy polishing a substrate, which method comprises, consists essentially of, or consists of (a) contacting a substrate with a chemical-mechanical polishing composition and polishin ad, (b) moving the polishing pad relative to the substrate with the chemical -mechanical polishing composition therebetween, and (c) abrading at least a portion of the substrate to polish the substrate, wherein the polishing pad comprises, consists essentially of, or consists of an axis of rotation, a polishing surface, and a plurality of grooves set into the polishing surface, wherei the plurality of grooves is composed of at least (a) a first plurality of concentric grooves having a.
  • first center of concentricity and (b) a second plurality of concentric grooves having a second center of concentricity, and wherein (1) the first center of concentricity is not coincident wi th the second center of concentricity, (2) the axis of rotation of the polishing pad is not coincident with, at least one of the first center of concentricity and the second center of concentricity, (3) the plurality of grooves does not consist of a continuous spiral groove, and (4) the polishing surface does not comprise a mosaic groove pattern.
  • FIG. I illustrates a polishing pad according to an embodiment of the invention.
  • FIG. J. is a view of the polishing surface of the polishing pad from a perspective -perpendicular to the polishing surface.
  • the polishing pad of FIG. 1 is a mirror image of the polishing pad of FIG. 2.
  • FIG. 1 contains a virtual x-axis and a virtual y-axis for ease of reference.
  • FIG. 2 illustrates a polishing pad according to an embodiment of the invention.
  • FIG. 2 is a view of the polishing surface of the polishing pad from a perspective perpendicular to the polishing surface.
  • the polishing pad of FIG. 2 is a mirror image of the polishing pad of FIG. I .
  • FIG . 2 contains a virtual x-axis and a virtual y-axis for ease of reference.
  • FIG. 3 illustrates a polishing pad according to an embodiment of the invention, FIG.
  • FIG. 3 is a view of the polishing surface of the polishing pad from perspective perpendicular to the polishing surface.
  • FIG. 3 contains a virtual x-axis and a virtual y-axis for ease of reference.
  • FIG. 4 illustrates a polishing pad accordin to an embodiment of the invention.
  • FIG. 4 is a view of the polishing surface of the polishing pad from a perspective perpendicuiar to the polishing surface.
  • FIG. 4 contains a virtual x -ax is and a virtual y-axis for ease of reference.
  • FIG. 5 is a cross-sectional view of a polishing pad according to the invention.
  • FIG. 6 is a profile view of an. end of a groove, illustrating the angle formed between the wall that joins the groove bottom with the polishing surface at the end of tire groove.
  • FIG, 7 is a bar graph comparing, at two different slurry flow rates, the removal rates of a con trol polishing pad comprising conventional concentric grooves centered at the axis of rotation of the polishing pad with four inventive polishing pads having the grooving patterns depicted FIGS. 1-4.
  • F!G. 8 illustrates a polishing pad according to an embodiment of the invention, wherein the pad contains a central channel .
  • FIGS. 1-8 The invention is illustrated by way of a discussion of FIGS. 1-8 but, of course, illustration in this manner should not be construed as in any way limiting the scope of the invention.
  • the features of the polishing pads described with respect to FIGS. 1-6 and 8 are general to a polishing pad of the invention, and therefore the described features can be combined in any suitable manner to result in a polishing pad of the invention.
  • FIGS. 1 -6 and 8 are merely illustrative of the types of grooving patterns of polishing pads of the invention so as to facilitate an understanding of the inventive grooving patterns; however, the dimensions and proportions represented in FIGS. 1-6 and 8 are not necessarily representative of the actual dimensions and proportions of a polishing pad of the invention.
  • the invention provides a polishing pad comprising, consisting essentially of, or consisting of an axis of rotation, a polishing surface, and a plurality of grooves set into the polishing surface, wherein the plurality of grooves is composed of at least (a) a first plurality of concentric grooves having a first cen ter of concentricity, and (b) a second plurality of concentric grooves having a second cen ter of concentricity, and wherein (1) the first center of concentricity is not coincident, with the second center of concentricity, (2) the axis of rotation of the polishing pad is not coincident with at ieast one of the first center of concentricity and the second center of concentricity, (3) the plurality of grooves does not consist of a continuous spiral groove, and (4) the polishing surface does not comprise a mosaic groove pattern.
  • the plurality of grooves can comprise, consist essentially of, or consist of any suitable number of pluralities o concentric grooves.
  • the features of the polishing pad of the invention typically are described herein with respect to a polishing pad having t wo pluralities of concentric grooves (i.e., a first plurali ty of concentric grooves and a second plurality of concentric grooves )
  • the polishing pad of the invention is not limited to two pluralities of concentric grooves.
  • the plurality of grooves can comprise at least two pluralities of concentric grooves, e.g., at least three, at least four, at least five, at least six, at least seven, at.
  • each plurality of concentric grooves is concentric about a center of concentricity, such that the number of plurality of concentric grooves is the same as the number of centers of concentricity.
  • the polishing pad contains at least four pluralities of concentric grooves
  • the pol ishing pad also contains at least four centers of concentricity.
  • the centers of concentricity can be separated from one another by any suitable distance.
  • the distances recited herein can refer to the distance between adjacent centers of concentricity and/or the distance between non-adjacent centers of concentricity, and the distances can be the same or different.
  • the centers of concentricity can be separated by a distance of 0.1 cm or more, e.g., 0.2 cm or more, 0.3 cm or more, 0.4 cm or more, 0.5 cm or more, 0.6 cm or more, 0.7 cm or more, 0.8 cm or more, 0.9 cm or more, 1 cm or more, 1.2 cm or more, 1.4 cm or more, 1.6 cm or more, 1.8 cm or more, 2 cm or more, 2.2 cm or more, 2.4 cm or more, 2.6 cm or more, 2.8 cm or more, 3 cm or more, 3,2 cm or more.
  • the centers of concentricity can be separated by a distance of 50 cm or less, e.g., 48 cm or less, 46 cm or less, 44 cm or less, 42 cm or less, 40 cm or less, 38 cm or less, 36 cm or less, 34 cm or less, 32 cm or less, 30 cm or less, 28 cm or less, 26 cm or less, 24 cm or less, 22 cm or less, 20 cm or less, 19.5 cm or less, 19 cm or less, .18.5 cm or less, .18 cm or less, 1.7.5 cm or less, 17 cm or less, 16.5 cm or less, 16 cm or less, 15,5 cm or less, 15 cm or less, 14.8 cm or less, 14.6 cm or less, 14.4 em or less, 1 .2 em or less, 14 cm or less, 13.8 cm or less, 13.6 cm or less, 13,4 cm or less, 13,2 cm or less, 13 cm or less, 12.8 cm or less, 12.6 cm or less, 12.4 cm or less, 12.2 cm or less
  • the distance can be 2.6 cm to 12.8 cm, 20 cm to 40 em, or 9.8 cm to 10.2 cm.
  • the distance between centers of concentricity e.g., the distance between a first center of concentricity and a second center of concentricity
  • the distance between centers of concentricity is .10 cm (e.g., 9,8 cm to 10.2 cm).
  • the polishing pad of the invention typically contains an axis of rotation, a geometric center, an axis of symmetry, a first center of concentricity, and a second center of concentricity.
  • the axis of rotation, the geometric center, the axis of symmetry, and one of the first center of concentricity or second center of concentricity may be coincident or not coincident with one another in any desirable combination.
  • the axis of rotation and the geometric center can be coincident with one another, while the axis of symmetry is not coincident with either the axis of rotation or the geometric center.
  • the axis of rotation, the geometric center, and the axis of symmetry may be coincident or not coincident, in any desirable combination, with one of the first center of concentricity or the second center of concentricity.
  • the ax is of rotation
  • the geometric center, and the axis of symmetry are coincident with one another, and preferably the axis of rotation, the geometric center, and the axis of symmetry are not coi ncident with either the first center of concentricity or the second center of concentricity.
  • the polishing pad comprises a polishing surface 100, a plurality of grooves 104 and 105 set into the polishing surface 100, an axis of rotation 101, a geometric center 102, and an axis of symmetry 103,
  • the axis of rotation 101 , the geometric center 102, and the axis of symmetry 103 are all coincident with one another in FIG. 1.
  • the plurality of grooves is composed of a first plurality of concentric grooves 1.04 having a first center of concentricity 106, and a second plurality of concen tric grooves 105 having a second center of concentricity 107.
  • the first center of concentricit 106 is not coincident with the second center of concentricity 107
  • the axis of rotation 101 is not coincident with either the first center of concentricit 106 or the second center of concentricity 107
  • the plurality of grooves does not consist of a continuous spiral groove
  • the plurality of grooves does not comprise a mosaic groove pattern.
  • the polishing pad comprises a polishing surface 200, a plurality of grooves 204 and 205 set into the polishing surface 200, an axis of rotation 201, a geometric center 202, and an axis of symmetry 203,
  • the axis of rotation 201 , the geometric center 202, and the axis of symmetry 203 are all coincident with one another in FIG. 2.
  • the plurality of grooves is
  • first and second pluralities of concentric grooves composed of a first plural ty of concentric grooves 204 having a first center of concentricity 206, and a second plurality of concentric grooves 205 having a second center of concentricity 207.
  • first and second pluralities of concentric grooves on ly a portion of the grooves in FIG. 2 are labeled in each of the first and second pluralities of concentric grooves, it should be noted that ail of the groo ves that are concentric about the first center of concentricity 206 are part of the first plurality of concentric grooves 204, and all of the grooves that are concen tric about the second center of concen tricity 207 are part of the second plurality of concentric grooves 205.
  • the first center of concentricity 206 is not coincident with the second center of concentricity 207
  • the axis of rotation 2 1 is not coincident with either the first center of concentricity 206 or the second center of concentricity 207
  • the plurality of grooves does not consist of a continuous spiral groove
  • the plurality of grooves does not comprise a mosaic groove pattern
  • the polishing pad comprises a polishing surface 300, a plurality of grooves 304 and 305 set into the polishing surface 300, an axis of rotation 301, a geometric center 302, and an axis of symmetry 303.
  • the axis of rotation 301, the geometr ic center 302, and the axis of symmetry 303 are all coincident with one another in FIG. 3.
  • the plurality of grooves is composed of a first plurality of concentric grooves 304 having a first center of concentricity 306, and a second plurality of concentric grooves 305 having a second center of concentricity 307.
  • the first center of concentricity 306 is not coincident with the second center of concentricity 307
  • the axis of rotation 301 is not coincident with either the first center of concentricity 306 or the second center of concentricity 307
  • the plurality of grooves does not consist of a continuous spiral groove
  • the plurality of grooves does not comprise a mosaic groove pattern.
  • the polishing pad comprises a polishing surface 400, a plurality of grooves 404 and 405 set into the polishing surface 400.
  • the axis of rotation 401, the geometric center 402, and the axis of symmetry 403 are all coincident with one another in.
  • the plurality of grooves is composed of a fust plurality of concentric grooves 404 having a first center of concentricity 406, and a second plurality of concentric grooves 405 having a second center of concentricity 407, although , for brevity, only a portion of the grooves in FIG.
  • first and second pluralities of concentric grooves are labeled in each of the first and second pluralities of concentric grooves, it should be noted thai all of the grooves that are concentric about the first center of concentricit 406 are part of the first pluralit of concentric grooves 404, and all of the grooves that are concentric about the second center of concentricity 407 are part of the second plurality of concentric grooves 405.
  • the first center of concentricity 406 is not coincident with the second center of concentricity 407
  • the axis of rotation 401 is not coincident with either the first center of concentricity 406 or the second center of concentricity 407
  • the pluralit of grooves does not consist of a continuous spiral groove
  • the plurality of grooves does not comprise a mosaic groove pattern.
  • the polishing pad of the invention can have any suitable shape.
  • the polishing pad can be substantially in the shape of a circle (i.e., circular), oval, square, rectangle, rhombus, triangle, continuous belt, polygon (e.g., pentagon, hexagon, heptagon, octagon, nonagon, decagon, etc.), and the like.
  • the term "substantially in the context of the shape of the polishing pad means that the shape can vary in an insignificant way from, a technical definition of the shape at issue, such that the overall shape would be considered by one of ordinarily skill in the art to resemble the given shape.
  • the radius of the polishing pad (as measured from the geometric center of the polishing pad to the outer edge of the pad) can vary in an insignificant manner (e.g., minor fluctuations) around the entire polishing pad, such that one of ordinarily skill in the art would still consider the polishing pad. to have a circular shape, despite the situation in. which the radius is not entirely constant around the entire polishing pad.
  • the polishing pad is substantially in the shape of a. circle, i.e., the polishing pad has a substantially circular shape.
  • the polishing pad can have any suitable radius R.
  • tire radii listed hereinbelow can refer to the long axis and/or the short axis of the oval shape.
  • the polishing pad can have a radius R that is 8 cm or more, e.g., 9 cm or more, 10 em or more, 12 cm or more, 14 cm or more, 16 era or more, 18 cm or more. 20 cm or more, 22 cm or more, 24 cm or more, 26 cm or more, 28 cm or more, 30 cm or more.
  • the polishing pad can have a radius R that is 52 errs or less, e.g., 50 cm or less, 48 cm or less, 46 cm or less, 44 cm or less, 42 cm or less, 40 cm or less, 38 cm or less, 3 cm or less, 34 cm or less, 32 cm or less, 30 cm or less, 28 cm or less, 26 cm or Jess, 24 cm or less, 22 cm or less, 20 cm or less, 18 cm or less, 1.6 cm or less, 14 cm or less, 12 cm or less, 10 cm or less, or 9 cm or less, "
  • the radius R of the polishing pad can be within the range bounded by any two of the foregoing endpoinis.
  • the radius R can be within the range of 10 cm to 52 cm, 20 cm to 26 cm,
  • the centers of concentricity can be offset from the axis of rotati n of the polishing pad by any suitable distance.
  • the offset distance can be expressed as a fraction of the radios R of the polishing pad, sometimes known in the art as the normalized oft-center distance (“NOC" distance) (i.e., the measured distance from the axis of rotation to a center of concentricity divided by the radius R of the polishing pad).
  • NOC normalized oft-center distance
  • the first center of concentricity is offset from the axis of rotation of the polishing pad by a first distance measured as a fraction of the radius R of the polishing pad of 0 R to 2 R
  • the second center of concentricity is offset from the axis of rotation of the po lishing pad by a second di stance measured as a fraction of the radius R of the polishing pad of 0 R to 2 R
  • the first distance and the second distance can be the same or different provided that, when one of the first distance or the second distance is 0 R, the other of the first distance or the second distance is not 0 R.
  • the first distance and/or the second distance is 0 R or more, e.g., 0.001 R or more, 0,005 R or more, 0,01 R or more, 0,015 R or more, 0,02 R or more, 0.025 R or more, 0,03 R or more, 0.035 R or more, 0.04 R or more, 0.045 R or more, 0.05 R or more, 0.055 R or more, 0.06 R or more, 0.065 R or more, 0.07 R or more, 0.075 R or more, 0,08 R or more, 0.085 R. or more, 0.09 R or more, 0.095 or more, 0.1 R or more, 0.15 R or more, 0.2 R or more.
  • the first distance and/or the second distance is 2 R or less, e.g., 1.95 R or less, 1.9 R or less, 1.85 R or less, 1.8 R or less, 1.75 R or less, 1.7 R or less, 1.65 R or less, 1.6 R or less, 1.55 R or less, .5 R or less, 1.45 R or less, 1.4 R or less, 1.35 R or less, 1.3 or less, 1.25 R or less, 1.2 R or less, 1 , 15 R or less, 1.1 R or less, 1.05 R or less, I R or less, 0,95 R or less, 0,9 or less, 0.85 R or less, 0,8 R.
  • R or less 0,75 R or less, 0.7 R or less, 0,65 R or less, 0.6 R or less, 0.55 R or less, 0.5 R or less, 0.45 or less, 0.4 R or less, 0.35 R or less, 0.3 R or less, 0.25 R or less, 0.2 or less, 0.15 R or less, 0.
  • the first: distance and/or the second distance can be within the range bounded by any two of the foregoi ng endpoints.
  • the first distance and/or the second distance can be 0.0.1 R to 0.8 R, 0.5 R to 1 R, or 0.25 R to 0,55 R. In a preferred embodiment, the first distance and the second distance are 0, 15 R to 0.25 R.
  • the centers of concentricity can be located within the confines of the polishing pad, and/or the centers of concentricity can be located beyond the confines of the polishing pad. Wi th respect to the radius R of the polishing pad, the centers of concentrici ty can be ⁇ 1 R and/or >. 1 R. hi the context of a polishing pad of the invention having at least two centers of concentricity.
  • the polishing pad can be characterized by one of the following conditions: (a) the first distance and the second distance are ⁇ 1 R, (b) the first distance and the second distance are > 1 R, or (c) the first distance is ⁇ 1 R and the second distance is > 1 R,
  • the additional centers of concentricity can be located within the confines of polishing pad and/or outside of the confines of the polishing pad, in any desirable combination.
  • the polishing pad has a substantially circular shape, and the first center of concentricity 106 and the second center of concentricity 107 are offset from the axis of rotation 101 of the polishing pad such that the first distance and the second distance are ⁇ 1 R.
  • the polishing pad has a substantially circular shape, and the first center of concentricity 206 and the second center of concentricity 207 are offset from the axis of rotation 201 of the polishing pad such that the first distance and the second distance are ⁇ 1 R.
  • the polishing pad has a substantially circular shape, and the first center of concentricity 306 and the second center of concentricity 307 are offset from the axis of rotation 301 of the polishing pad such that the first distance and the second distance are ⁇ 1 R,
  • the polishing pad has a substantially circular shape, and the first center of concentricity 406 and the second center of concentricity 407 are offset from the ax is of rotation 401 of the polishing pad such that the first distance and the second distance are ⁇ i R.
  • each of the pluralities of concentric grooves are symmetric with respect to the other pluralities of concentric grooves by way of a rotation about an axis of symmetry perpendicular to the polishing surface.
  • the number of centers of concentricity is X
  • each of the pluralities of concentric grooves can be symmetric with respect to the other pluralities of concentric grooves by way of a 360° X rotation about an axis of symmetry perpendicular to the polishing surface.
  • the polishing pad has two centers of concentricity having a first plurality of concentric grooves and a second plurality of concentric groo ves
  • the first plurality of concentric grooves is symmetric with the second plurality of concentric grooves by way of a 180° rotation ⁇ I.e., 360°/2) about an axis of symmetry perpendicular to the polishing surface.
  • the first plurality of concentric grooves 104 is symmetric with the second plurality of concentric grooves 105 by way of a 180° rotation about the axis of symmetry 1.03 that is perpendicular to the polishing surface 100.
  • the first plurality of concentric grooves 204 is symmetric with the second piurality of concentric grooves 205 by way of a 180° rotation about the axis of symmetry 203 that is perpendicular to the polishing surface 200.
  • the first plurality of concentric grooves when the pluralit of grooves is extended infinitely in the plane of the polishing surface, the first plurality of concentric grooves is symmetric with the second piurality of concentric grooves by way of a first mirror plane that (a) is perpendicular to the polishing surface and (b) does not intersect with either the first center of concentricity or the second center of concentricity.
  • the first plurality of concentric grooves 304 is symmetric with the second plurality of concentric grooves 305 by way of a first mirror plane that (a) is perpendicular to the polishing surface 300 and (b) does not intersect with either the first center of concentricity 306 or the second center of concentricity 307.
  • the first mirror plane is located along the virtual y-axis
  • the first plurality of concentric grooves 404 is symmetric with the second plurality of concentric grooves 405 by way of a first mirror plane that (a) is perpendicular to the polishing surface 400 and (b) does not intersect, with either the first center of concentricity 406 or the second center of concentricity 407. in FIG. 4, the first mirror plane is located along a virtual y-axis.
  • the first plurality of concentric grooves is symmetric with he second plurality of concentric grooves by way of a second mirror plane that fa) is perpendicular to the polishing surface and (b) intersects with both the first center of concentricity and the second center of concentricity.
  • the first plurality of concentric grooves 304 is symmetric with the second plurality of concentric grooves 305 by way of a second mirror plane that (a) is perpendicular to the polishing surface 300 and (b) intersects with, both the first center of concentricity 306 and the second center of concentricity 307.
  • the second minor plane is located along a virtual x-axis.
  • the first plurality of concentric grooves 404 is symmetric with the second plurality of concentric grooves 405 by way of a second mirror plane that (a) is perpendicular to the polishing surface 400 and fb) intersects with both the first center of concentricity 406 and the second center of concentricity 407.
  • the second mirror plane is located along a virtual x-axis.
  • the first plurality of concentric grooves when the plurality of grooves is extended infinitely in the plane of the polishing surface, the first plurality of concentric grooves is not symmetric with the second plurality of concentric grooves by way of a mirror plane that is perpendicular to the polishing surface.
  • the first plurality of concentric grooves 104 and 105 when the plurality of grooves 104 and 105 is extended infinitely in the plane of the polishing surface 100, the first plurality of concentric grooves 104 is not symmetric with the second plurality of concentric grooves 105 by way of a mirror plane that is perpendicular to the polishing surface 100.
  • At least a portion of the grooves in the plurality of grooves is an arc having a shape selected from the group consisting of substantially circular, substantially semi-circular, substantially parabolic, substantially oval, and combinations thereof
  • the shape is substantially circular or substantially semi-circular
  • each respective groove in the first plurality of concentric grooves has a substantially constant radius with respect to the first center of concentricity
  • each respective groove in the second plurality of concentric grooves has a substantially constant radius with respect to the second center of concentricity.
  • all of the grooves in the pluralit of grooves have the shape as described herein.
  • v semi- circular ' as used herein.
  • the terms “circular” and “semi-circular” are interchangeably used herein to describe an arc groove that has a substantially constant radius with respect to a given center of concentricity.
  • substantially constant radius as used herein means that the radius an arc groove varies only insignificantly such that the overall shape of the are groove would be considered by one of ordinarily skill in the art to resemble a circular or semi-circular shape.
  • the plurality of grooves cars have any suitable cross-sectional shape.
  • the cross- sectional shape of the grooves is the shape formed by the combination of the groove walls and groove bottom.
  • the cross-sectional shape of the grooves can be U-shaped, V-shaped, squ re-shaped (i.e., the groove walls and bottoms are formed at 90" angles), and the like.
  • the grooves have a cross -sectional shape that is U-shaped.
  • the polishing pad comprises a polishi g surface 600, a first plurality of concentric grooves 601, a second piuraiity of concentric grooves 602, and at least one groove end 603 that terminates on the polishing surface.
  • the wall 604 that joins the groove end with the polishing surface 600 makes an angle ⁇ with respect to the polishing surface 600, wherein the angle ⁇ can be any suitable angle.
  • the angle 0 can be 10° or more, e.g., 20° or more, 30° or more, 40° or more, 50° or more, 60° or more, 70° or more, 80° or more, or 90*.
  • the angle ⁇ can be 90° or less, e.g., 80° or less, 70° or less, 60° or less, 50° or less, 40° or less, 30° or less, or 20° or less.
  • the angle ⁇ can be within the range bounded by any two of the foregoing endpomts.
  • the angle ⁇ can be 20° to S0°, 10° to 40°, or 70° to 90°.
  • the angle ⁇ is 90° (e.g., 90° or .more).
  • one of the following conditions is satisfied: (a) at least one groove in a plurality of concentric grooves (e.g.. the first plurality of concentric grooves or second plurality of concentric grooves) completes a closed arc around the respective center of concentricity (e.g., the first center of concentricity or the second center of concentricity, respectively), or (b) none of the grooves in a plurality of concentric grooves (e.g., the first piuraiity of concentric grooves or second plurality of concentric grooves) completes a closed arc around the respective center of concentricity (e.g., the first center of concentricity or the second center of concentricity, respectively).
  • each respective groove in the first pluraiity of concentric grooves 104 has a substantially constant radius with respect to the first center of concentricity 106
  • each respective groove i the second plurality of concentric grooves 105 has a substantially constant radius with respect to the second center of concentricity .1.07.
  • none of the grooves in the first plurality of concentric grooves 104 or second plurality of concentric grooves 105 completes a closed arc around the first center of concentricity 106 or the second center of concentricity 107,
  • each respec tive groove in the fi rst pl urality of concentric grooves 204 has a substantially constant radius with respect to the first center of concentricity 206
  • each respective groove in the second plurality of concentric grooves 205 has a substantially constant radius with respect to the second center of concentricity 207.
  • none of the grooves in the first plurality of concentric grooves 204 or secon d plurality of concentric grooves 205 completes a closed arc around the first center of concentricity 206 or the second center of concentricity 207,
  • each respective groove in the first plurality of concentric grooves 304 has a substantially constant radius with respect to the first center of concentricity 306, and each respective groove in the second plurality of concentric grooves 305 has a substantially constant radius with respect to the second center of concentricity 307.
  • each respective groove in the first plurality of concentric grooves 304 has a substantially constant radius with respect to the first center of concentricity 306
  • each respective groove in the second plurality of concentric grooves 305 has a substantially constant radius with respect to the second center of concentricity 307.
  • At least one groove in the first plurality of concentric grooves 304 completes a closed arc around the first center of concentricity 306, and at least one groove in the second pluraiit of concentric grooves 305 completes a closed arc around the second center of concentricity 307.
  • At least a portion of the grooves in the plurality of grooves 404 and 405 is an arc having a shape that is substantially circular or substantially semi-circular, and each respecti ve groove in the first plurality of concentric grooves 404 has a substantial ly constant radius with respect to the first center of concentricity 406, and each respective groove in the second plurality of concentric grooves 405 has a substantially constant radius w th, respect to the second center of concentricity 407.
  • none of the grooves in the first plurality of concentric grooves 404 or second plurality of concentric grooves 405 completes a closed arc around the first center of concentricity 406 or the second center of concentricity 407,
  • the thickness T can be 500 pro. or more, e.g., 600 pm or more, 700 pm or more, S00 pm or more, 900 ⁇ or more, 1000 ⁇ or more, 1100 ⁇ or more, 1200 ⁇ or more, 1300 pm or more, 1400 ⁇ or more, 1500 pm or more, 1600 poi or more, 1700 pm or more, 1800 urn or more. 1900 ⁇ or more, 2000 pm or more, 2100 pm or more, 2200 pm or more, 2300 pm or more, or 2400 um or more.
  • the thickness T can be 2500 pm or less, e.g., 2400 ⁇ or less, 2300 ⁇ or less, 2200 ⁇ or less, 2100 ⁇ or less, 2000 pm or less, 1 00 pm or less, 1800 pm or less, 1700 pm. or less, 1600 pm or less, 1500 pm or less, 1400 pm or less, 1300 pm or less, 1200 pm or less, 1 100 ⁇ or less, 1000 pm or less, 900 pm or less, 300 pm or less, 700 pm or less, or 600 pm. or less.
  • the thickness T of the polishing pad can be within the range bounded by any two of the foregoing endpoints.
  • the thickness T can be 500 um to 1200 pm, S00 pm to 2000 pm, or 600 pm to 900 pm.
  • Each groove in the plurality of groo ves can have any suitable depth D, any suitable width W, and can be separated by an adjacent groove by any suitable pitch P.
  • the depth, width, and pitch of each, groove in the plurality of grooves can be constant or can vary. When the depth, width, and ' or pitch vary, the variation can be systematic or random within the same groove and/or with respect to other grooves. See FIG. 5, which depicts polishing surface 500, grooves 501, polishing pad thickness T, groove width W.
  • the polishing pad in the situation where the polishing pad has at least a first plurality of concentric grooves and a second plurality of concentric grooves, can be characterized as follows: (i) the polishing pad has a thickness T, (ii) each groove in the first plurality of concentric grooves has a first depth, a first width, and is separated from an adjacent groove by a first pitch, and (in) each groove in the second plurality of concentric grooves has a second depth, a second width, and is separated from an adjacent groove by a second pitch, and wherein one or more of the following conditions is satisfied: (a) the first dept and the second depth measured as a fraction of the thickness T of the polishing pad independently are 0.01 T to 0.99 T and can he the same or different, and the first depth, the second depth, or both, either is constant or varies within the first plurality of concentric grooves, the second plurality of concentric grooves, or both, (b
  • the thickness T of the polishing pad, and the depth, width, and pitch of the grooves is described herein in relation to the situation in which a polishing pad has two pluralities of grooves ⁇ i.e., a first plurality of concentric grooves and a second plurality of concentric grooves), the description is equally applicable to the situation in which the polishing pad can have, e.g., three, four, five, six, seven, eight, nine, or ten pluralities of grooves.
  • the polishing pad may have a third plurality of concentric grooves, wherein each groove in the third plural ity of concentric grooves has a third depth, a third width, and is separated from an adjacent groove by a third pitch, etc.
  • Each groove in the plurality of grooves i ndependently can have any suitable depth measured as a fraction of the thickness T of the polishing pad.
  • the depth of each groove can independently be 0.01 T or more, e.g., 0.05 T or more, 0.1 T or more, 0.15 T or more, 0.2 T or more, 0.25 T or more, 0.3 T or more, 0.35 T or more, 0.4 T or more, 0.45 T or more, 0,5 T or more, 0.55 T or more, 0.6 T or more, 0.65 T or more, 0.7 T or more, 0.75 T or more, 0.8 T or more, 0,85 T or more, 0.9 T or more. 0.95 T or more, or 0.99 T or more.
  • the depth of each groove can independently be 0.99 T or less, e.g., 0.95 T or less, 0,9 T or less, 0,85 T or less, 0,8 T or less, 0.75 T or less, 0.7 T or less, 0.65 T or less, 0.6 T or less, 0.55 T or less, 0.5 T or less, 0.45 T or less, 0,4 T or less, 0.35 T or less, 0,3 T or less, 0.25 T or less, 0.2 T or less, 0.1.5 T or less, 0.1 T or less, 0.05 T or less, or 0.01. T or less.
  • the depth of each groove can Independently be within t he range bounded by an two of the foregoing endpoints.
  • the depth can be 0.2 T to 0.8 T, 0.75 T to 0.85 T, or 0.4 T to 0.55 T.
  • Each groove in the plurality of grooves independently can have any suitable depth expressed as a distance measured from the polishing surface to the bottom of the groove.
  • the depth of each groove ca independently be 10 pm or more, e.g., 50 pm or more, 100 pm or more, 150 pm or more, 200 pm or more, 250 pro or more, 300 pm or more, 350 pm or more, 400 pm or more, 450 pm or more, 500 um or more. 550 pm or more, 600 pm or more, 650 ura or more, 700 pro or more, 750 pm or more, 800 pm or more.
  • the dept of each groove can independently be 5000 pm or less, e.g., 4900 pm or less, 4800 pm or less, 4700 pm or less, 4600 pm or less, 4500 pm or less, 4400 pm or less, 4300 pm or less, 4200 pm or less, 4100 pm or less, 4000 pm or less, 3900 pm or iess, 3800 pm or less, 3700 pm or less, 3600 pm or less, 3500 pm or less, 3400 pm or less, 3300 pro or less, 3200 pm or less, 1 0 pm or less, 3000 pm or less, 2900 pm or less, 2800 pm or less, 2700 pro or less, 2600 pm or less, 2500 pm or less, 2400 pm or less, 2300 pm or less, 2200 pm or less, 2100 pm or less, 2000 pm or less, 1950 pm or less, 1900 pm or less, 1850 pm or less, 1800 pm or less, 1750 pm or less, 1700 pm or iess, 1 50 pm or less, 1600 pm or
  • the depth of each groove can independently be within the range boimded by any two of the foregoing endpoints.
  • the depth can be 200 pm to 800 pm, 2500 pm to 4800 pm, or 1050 ⁇ to 1250 pro.
  • the depth of each groove is independently 750 ⁇ « ⁇ to 800 pm.
  • Each groove in the plurality of grooves independently can have any suitable width.
  • the width of each groove can independently be 10 pm or more, e.g., 50 pra or more, 100 pm or more, 150 pro or more, 200 pm or more, 250 pm or more, 300 pm or more, 350 pm or more, 400 pm or more, 450 pm or more, 500 pm or more, 550 pm or more, 600 pm or more, 650 pm or more, 700 pm or more, 750 pm or more, 800 pm or more, 850 pm or more, 900 pm or more, 950 pm or more, 1000 pm or more, 1050 pm or more, 1 100 pm or more, 1150 pm or more.
  • the width of each groove can independently be 5000 pm or less, e.g., 4900 pm or less, 4800 pm or less, 4700 pm or less, 4600 pm or less, 4500 pm or less, 4400 pro or less, 4300 pm or less, 4200 pm or less, 4100 pm or less, 4000 pm or less, 3900 pm or less, 3800 pm or less, 3700 pm or less, 3600 pm or less, 3500 pm or less, 3400 pm or less, 3300 pm or less, 3200 pm or less, 3100 pm or less, 3000 pm or less, 2900 pm or less, 2800 pm or less, 2700 pm or less, 2600 pm or less, 2500 pm or less, 2400 pm or less, 2300 pm or less, 2200 pm or less, 2100 pm or less, 2000 pm or less, 1950 pm or less, 1 00 pm or less, 1850 pm or less, 1800 pm or less, 1750 pm or less, 1700 pm or less, 1650 pm or less, 1600 pm. or less, 1550
  • each groove can independently be within the range bounded by any two of the foregoing endpoints.
  • the width can be 200 pm to 800 urn, 1700 pm to 4800 pm, or 650 pra to 850 ⁇ .
  • the width of each groove independently is 500 p to 550 pro, ⁇ 062
  • Each groove in the plurality of grooves can be separated by an adjacent groove by any suitable pitch.
  • the pitch between two adjacent grooves is larger than the width of one or both of the adjacent grooves.
  • the pitch can be constant or vary throughout the polishing pad.
  • the pitch values described herein can be combined in any suitable manner so as to describe a polishing pad of the invention having two or more pitch values.
  • the pitch can be 1 pro or more, e.g., 50 ⁇ or more, 100 urn or more, 150 pm or more, 200 pro or more, 250 pm or more, 300 pm or more, 350 ⁇ or more, 400 pm or more, 450 pm or more, 500 pm or more, 550 pm or more, 600 pm or more, 650 p n or more, 700 pm or more, 750 pm or more, 800 pm or more, 850 pm or more, 900 pm or more, 950 pm or more, 1000 pm or more, 1050 pm or more, i 1 0 pm or more, 1 1 0 pm or more, 1200 pm or more, 1250 pm or more, 1300 pm or more, 1350 um or more, 1400 pm or more, 1450 pm or more, 1500 pm or more, 1550 pm or more, 1600 pm or more, 1 50 pin or more, 1700 pm or more, 1750 pm or more, 1800 pm or more, 1850 pm or more, 1900 pm or more, 1950 pm or more, 2000 pm or more, 2100 pro or
  • the pitch can be 1.0000 pm or less. 9500 urn or less, 9000 pm or less, 8500 pm or less. 8000 pm or less, 7500 pra or less, 7000 pra or less, 6500 pm or less, 6000 ⁇ or less, 5500 pro or less, 5000 ⁇ or less, 4900 ⁇ or less, 4800 um or less, 4700 ⁇ or less, 4600 ⁇ or less, 4500 ⁇ or less, 4400 ⁇ or less, 4300 ⁇ » or less, 4200 ⁇ or less, 4100 ⁇ or less, 4000 ⁇ or less, 3900 ⁇ or less, 3800 ttm or less, 3700 ⁇ or less, 3600 ⁇ o less, 3500 ⁇ or less, 3400 ⁇ or less, 3300 ⁇ or less, 3200 ⁇ or less, 3100 ⁇ or less, 3000 ⁇ « ⁇ or less, 2900 ⁇ or less, 2800 pro or less, 2700 ⁇ or less, 2600 pm or less, 2
  • the pitch between adjacent grooves can be within the range bounded by any two of the foregoing endpoints.
  • the pitch can he 800 ⁇ to 1200 ⁇ , 600 um to 1100 ⁇ , or 2500 um to 6000 ⁇ .
  • the pitch between adjacent grooves is 2000 pm to 2 S 00 ⁇ .
  • At least a portion of a area surrounding one or more of the centers of concentricity does not comprise any grooves, and the area typical ly has a radius greater than the pitch of the grooves immediately surrounding the area.
  • a polishing pad having at least two centers of concentricity i.e., a first center of concentricity and a second center of concentricity
  • at least a portion of an area surrounding the first center of concentricity, the second center of concentricity, or both does not comprise any grooves, wherein the are has a radius greater than at least one of the first pitch (i.e., the pitch of the first plurality of concentric grooves) or the second pitch (i.e.
  • the polishing pad of the invention does not contain an area surrounding an centers of concentricity, wherein the area is defined as not comprising grooves and having a radius greater than the pitch of the grooves surrounding the area.
  • FIGS. 1-4 The descriptions herembeiow of FIGS. 1-4 in relation to art area surrounding a center of concentricity are merely for illustrative purposes to better understand this feature. However, these descriptions of FIGS. 1-4 in this manner should not be construed as purporting that the dimensions and proportions represented in FIGS. 1 -4 are representative of the dimensions and proportions of the polishing pad of the invention.
  • At least a portion of an area surrounding the first center of concentricity .106 and the second center of concentricity 107 does not comprise any grooves, and the area has a radius greater than the pitch (i.e., first pitch) of the first plurality of concentric grooves 104 and the pitch (i.e., second pitch) of the second plurality of concentric groove 105. (00661 With reference to FIG.
  • At least a portion of an area surrounding the first center of concentricity 206 and the second center of concentricity 207 does not comprise any grooves, and the area has a radius greater than the pitch ⁇ i .e., first pitch) of the first plurality of concentric grooves 204 and the pitch (i.e., second pitch) of the second, plurality of concentric groove 205.
  • At least a portion of an area surrounding the first center of concentricity 306 and the second center of concentricity 307 does not comprise any grooves, and the area has a radius greater than the pitch (i.e., first pitch) of the first plurality of concentric grooves 304 and the pitch (i.e., second pitch) of the second plurality of concentric groove 305.
  • the polishing pad of FIG. 4 does not contain an area surrounding any centers of concentricity, wherein the area is defined as not comprising grooves and having a radius greater than the pitch of the grooves surrounding the area.
  • At least a portion of the grooves in. the plurality of grooves does not cross (i.e., intersect with) any other grooves in the plurality of grooves. In a preferred embodiment, none of the grooves in the plurality of grooves cross (i.e., intersect with) any other grooves in the plurality of grooves,
  • each region contains a plurality of grooves concentric about a center of concentricity.
  • Each region typically consists of one plurality of grooves concentric about a center of concentricity, and the region typically does not contain any other grooves that are not concentric about the center of concentricity .
  • the region typically does not contain any grooves that cross any other grooves.
  • Each region typically contains grooves, but each region does not need to, but may, contain the center of concentricity about which the grooves in the region are concentric. In this regard, a region may contain grooves and the center of
  • the center of concentricity may e located in an adjacent region, at the interface between abutting regions, or outside the confines of the polishing pad.
  • the polishing pad of the invention having at least two centers of concentricity (and associated concentric grooves), one or more of the following conditions typically are satisfied: (a) the first plurality of concentric grooves does not cross the second plurality of concentric grooves, and (b) the polishing pad has a first region containing the first plurality of concentric grooves and a second region containing the second plurality of concentric grooves, wherein the first region is adjacent to the second region.
  • the polishing pad of the invention can contain more than two regions, for example, three, four, live, six, seven, eight, nine, or ten regions.
  • first center of concentricit is located in the first region and the second center of concentricity is located in the second region
  • first center of concentricity is located in the second region and the second center of concentricity is located in the first region
  • both the first and second centers of concentricity are located in the first region
  • fd the first center of concentricity is located at the interface and the second center of concentricity is located in either the first or second region
  • both, the first and second centers of concentricity are located at the interface.
  • the regions can be arranged in any suitable manner.
  • the regions can be adjacent to one another, or the regions can be separated from one another on the polishing surface of the polishing pad.
  • at least a portion of the regions can abut one another at an interface, the regions can entirely abut one another at an interface, or the regions may not abut one another at an interface but rather the regions may be separated from one another by one or more other regions.
  • the one or more other regions can be termed a third, fourth, fifth, sixth, seventh, eighth, ninth, or tenth region, depending on the total number of regions present on the polishing surface.
  • the one or more other regions may contain grooves, or the one or more other regions may be free of grooves (i.e., the one or other region may not contai grooves).
  • one or more of the other regions can. comprise one groove or a plurality of grooves, or one or more of the other regions can consist of a single groove.
  • the single groove typical ly serves to separate the region s on the polishing pad, and the pluralities of grooves contained in the regions typically open into (i.e., empty into) the single groove.
  • the plurality of grooves in one region that can open into (i.e., empty into) the single groove can have any suitable alignment with the plurality of grooves in another region that is abutting the single groove from the other side of the single groove, as discussed in more detail herei.ribelow.
  • This single groove can span -from one edge of the polishing pad to the opposite edge of the polishing pad, and the single groove can he continuous or discontinuous, as defined hereinbelow.
  • the single groove can have any suitable width and any suitable depth.
  • the width and depth of the single groove can be the same as or different from the width and depth of each groove in the pluralities of grooves.
  • the width and depth values for each groove in the pluralities of grooves set fort herein is equal ly applicable to the single groove.
  • the features 110, 210, 310, and 410 in FIGS. 1 -4 of the polishing pad are defi ned to represent a single groove, and this single groove spans from one edge of the polishing pad to the opposite edge of the polishing pad, and at least some of the plurality of grooves from the regions separated by the single groove empty into the single groove (i.e. are in fluid
  • this single groove is referred to as a central channel.
  • a example of a polishing pad with the central channel is illustrated in FIG. 8,
  • the central channel may have any suitable depth.
  • the depth of the central channel is greater than the depth of the plurality of grooves.
  • the depth is expressed as a distance measured from the polishing surface to the bottom of the channel.
  • the depth of the channel can be 20 iim or more, e.g., 50 ⁇ or more, 100 ⁇ or more, 150 ⁇ or more, 200 ⁇ or more, 250 ⁇ or more, 300 ⁇ or more, 350 urn or more, 400 ⁇ or more, 450 ⁇ or more, 500 u or more, 550 ⁇ or more, 600 ⁇ or more, 650 ⁇ or more, 700 ⁇ » or more, 750 ⁇ or more, 800 pm or more, 850 pm or more, 900 ⁇ or more, 950 pm or more, 1000 ⁇ or more, 1050 ⁇ or more, 1 100 ⁇ or more, 1 1.50 ⁇ or more, 1200 um or more, 1250 ⁇ or more, 1300 pm or more.
  • the depth of the central channel be 5000 pm or less, e.g., 4900 pm or less, 4800 ⁇ » or less, 4700 ⁇ or less, 4600 ⁇ or less, 4500 prn or less, 4400 pm or less, 4300 ⁇ or less, 4200 um or less, 4100 ⁇ or less, 4000 ⁇ or less, 3900 pm or less, 3800 ⁇ or less, 3700 ⁇ or less, 3600 pm or less, 3500 um or less, 3400 pm or less, 3300 pm or less, 3200 um or less, 3100 ⁇ or less, 3000 ⁇ or less, 2900 pm or less, 2800 pm or less, 2700 pm or less, 2600 pm or less, 2500 pm or less, 2400 pm or less, 2
  • the depth of the central channel can be within the range bounded by any two of the foregoing endpomts.
  • the depth can be 20 pro to 800 ⁇ , 2500 pra to 4800 pm, or 1050 pra to 1250 um.
  • the depth of the central channel is greater than the depth of the plurality of concentric grooves, which abut and empty into, or are in fluid communication with, the central channel.
  • the central channel ears have any suitable width.
  • the width of the central channel can be 10 ⁇ or more, e.g., 50 pm or more, 100 pm or more, 150 ⁇ or more, 200 pm or more, 250 prn or more, 300 pm or more, 350 pm or more, 400 pm or more, 450 um or more, 500 pm or more, 550 ⁇ or more, 600 um or more. 650 pra or more, 700 pm or more.
  • the width of the central channel be 5000 pm or less, e.g., 4900 um or less, 4800 ⁇ or less, 4700 pm or less, 4600 um or less, 4500 pm or less, 4400 pm or less, 4300 ⁇ or less, 4200 pm or less, 4100 pm or less, 4000 pm or less, 3900 pm or less, 3800 ⁇ or less, 3700 pm or less, 3600 pm or less, 3500 pm or less, 3400 pm or less, 3300 pm or less, 3200 pm or less, 31 0 pm or less, 3000 pm or less, 2900 pm or less, 2800 ⁇ or less, 2700 pm or less, 2600 pm or less, 2500 pm or less, 2400 um or less, 2300 pm or less, 2200 pm or less, 2100 pm or less, 2000 pm or less, 1 50 pm or less, 1900 ⁇ or less, 1850 pm or less, 1800 pm or less, 1750 pm or less, 1 700 p or less, 1650 pm or less, 1600 um or
  • the width of the central channel can be within the range bounded by any tw of the foregoing endpoints.
  • the width can be 200 pm to 800 pn 1700 pm to 4800 pm, or 650 pm to 850 pm,
  • the central channel may have a rounding edge configuration.
  • the rounding edge may be of any suitable dimensions.
  • the rounding edge can be defined by the depth of the rounded edge being greater than one half of the depth of the central channel.
  • the depth of the rounded edge is understood to mean the depth starting from the surface of the polishing pad to the point where the wail of the central channel transitions from a rounded configuration to a straight configuration.
  • the rounding edge may he alternatively described as the point along the channel wall where the channel width starts to increase relative to the width at the bottom of the channel. In other words, a channel without a rounding edge would have a uniform width measured from along the sides of the channel, from the bottom of the channel to the top of the channel, ending at the polishing surface.
  • a central channel having a rounding edge would have a channel width (Wb) measured at the bottom of the channel and a channel widt measiired at the top of the channel (Wt) defined by the polishing surface, wherein Wb ⁇ Wt.
  • a channel with a rounding edge may have a channel width at the bottom of the channel equal to 80 mil, a channel width at a point representing half-way between the bottom and the top of the channel depth of 80 mi l, and a channel width at the top of the channel of 1 0 mil.
  • a polishing pad of the in vention typically can be characterized by one or more of the follow ing conditions: (a) at least a portion of the first region abuts at least a portion of the second region at an interface, (b) the first region entirely abu ts the second region at an interface, (c) the first region is entirely separated from the second region by a third region, and (d) at least a portion of the first region and at least a portion of the second region abut a common central channel, in a preferred embodiment, the first region entirel abuts the second region at an interface, and there is no intervening region located between the first region and the second region.
  • the polishing pad of the invention can have any suitable alignment of grooves (a) at an interface between abutting regions, and/or (b) across an intervening region. For example, (a) when one region entirely abuts or partially abuts an adjacent region at an interface, or (b) when one region is separated from m adjacent region by an intervening region, at least a portion of the grooves from one region may be aligned with and or overlapping with at least a portion of the grooves of the adjacent region (a) at the interface and/or (b) across the intervening region, the grooves h orn one region may be entirely aligned with and/or overlapping with the grooves from the adjacent region (a) at the interface and/or (b) across the intervening region, or none of the grooves from one region may be aligned with and/or overlapping with the grooves from the adjacent region (a) at the interface and/or (b) across the intervening region.
  • aligned means that the center of a groove from one region is lined op with (i.e., aligned with) the center of a groove from an adjacent region.
  • overlapping means that the center of a groove from one region is not aligned with the center of a groove from an adjacent region; however, the opening of the groove from one region overlaps wit the opening of the groove from the adjacent region.
  • Whe at least a portion of the grooves from one region are aligned with and/or overlapping with, grooves tram another region, 10% or more, e.g., 20% or more, 30% or more, 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, 90% or more, or 100% of the grooves are aligned and/or overlapping, measured as a proportion of the number of grooves in alignment and/or i overlap relati ve to the total number of grooves (a) at the interface and/or (b) across the intervening region.
  • a polishing pad has at least two abutting regions, i.e., a first region containing a first plurality of concentric grooves and a. second region containing a second plurality of concentric grooves wherein at least a portion of the two regions abut at an interface, typically one or more of the following conditions is satisfied; fa) at least one of the grooves in the first plurality of concentric grooves is aligned with at least one of the grooves in the second plurality of concentric grooves at the interface, ( b) the grooves in the first plurality of concentric grooves are aligned with the grooves in the second pl u rality of concentric grooves at the interface, and (c) none of the grooves in the first plurality of concentric grooves is aligned with the grooves in the second plurality of concentric grooves at the interface.
  • Each groove in the plurality of grooves can be continuous or discontinuous.
  • a “continuous " '' groove is a groove having a depth that does not equal zero pra along the entire length of the groove within its region (e.g., first or second region). In other words, a continuous groove has a positive depth along its entire length within its region.
  • a “discontinuous" groove is a groove that has at least a portion along its length in which the depth of the groove equals zero within its region ⁇ e.g., first or second region), in other words, a discontinuous groove has a portion that becomes flush with the polishing surface at some point along its length within its region, such that the groove cannot be considered to be a groove at that point.
  • the point at which the groove meets an adjacent region or the edge of the polishing pad is not considered to be a “discontinuity" for the purpose of categorizing a groove as “continuous” or “discontinuous,” In other words, if a groove otherwise meets the definition of "continuous” as used herein but the groove ends at the edge of its region or the edge of the polishing pad, then such a groove would be considered to be a continuous groove.
  • the grooves in a polishing pad of the invention can e continuous, discontinuous, or a combination thereof, in some embodiments, all of the grooves can be continuous, or all of the grooves can be discontinuous, in other embodiments, at least 10 %, at least 20 %, at least 30 %, at least 40 %, at least 50 %, at least 60 %, at least 70 %, at least 80 %, at least 90 %, or 100% of the grooves are continuous (or discontinuous), measured as a proportion of the number of grooves in the polishing pad that are continuous (or discontinuous) relative to the total number of grooves in the polishing pad.
  • the number of grooves is summed as follows: the number of grooves in a region having a substantially different radius is summed, and then the number of grooves from each region in a polishing pad is summed, thereby obtaining a total overall number of grooves.
  • the proportion of continuous or discontinuous grooves can then be calculated,
  • the first plurality of concentric grooves 104 does not cross the second lurality of concentric grooves 105, and the polishing pad has a first region 108 containing the first plurality of concentric groo ves 104 and a second region 109 containing the second plurality of concentric grooves 105, wherein the first region 108 is adjacent to the second region 109.
  • the first region 108 abuts the second region 109 at interface 110.
  • the first plurality of concentric grooves 204 does not cross the second plurality of concentric grooves 205, and the polishing pad has a first region 208 containing the first plurality of concentric grooves 204 and a second region 209 containing the second plurality of concentric grooves 205, wherein the first region 208 is adjacent to tire second region 209.
  • the first region 208 abuts the second region 209 at interface 210. None of the grooves in the first plurality of concentric grooves 204 is aligned with the grooves in the second plurality of concentric grooves 205 at interface 210.
  • Both the first center of concentricity 6 and the second center of concentricity 207 are located at the interface 210 between abutting regions 208 and 209. All of the grooves in FIG. 2 are continuous.
  • the first plurality of concentric grooves 304 does not cross the second plurality of concentric grooves 305, and the polishing pad has a first region 308 containing the first plurality of concentric grooves 304 and a second region 309 containing the second plurality of concentric grooves 305, wherein the first region 308 is adjacent to the second region 309, The first region 308 abuts the second region 309 at interface 310.
  • the grooves in the first plurality of concentric groo ves 304 are aligned with the grooves in the second plurality of concentric grooves 305 at the interface 310.
  • the first center of concentricity 306 is located in the fust region 308 and the second center of concentricity 307 is located in the second region 309. Alt of the grooves in FIG. 2 are continuous.
  • the first plurality of concentric grooves 404 does not cross the second plurality of concentric grooves 405, and the polishing pad has a first region 408 containing the first plurality of concentric grooves 404 and a second region 409 containing the second plurality of concentric grooves 405, wherein the first region 408 is adjacent to the second region 409. The first region 408 abuts the second region 409 at interface 410.
  • the grooves in the first plurality of concentric grooves 404 are aligned with the grooves in the second plurality of concentric grooves 405 at the interface 410.
  • the first center of concentricity 406 is located in the second region 409 and the second center of concentricity 407 is located in the first region 408. Alt of the grooves in FIG. 4 are continuous.
  • Each groove in the plurality of grooves can have an suitable proportional arc length.
  • the proportional arc length of a groove is defined herein as a proportion of the actual arc lengt of a groove rela tive to the total arc length of the groove if the groo ve completed a closed arc about its center of concentricity .
  • the actual arc length includes the length from one end of the groove to the other end of the groove, including any discontinuities that may be present ( when the groove happens to be a discontinuous groove).
  • the total arc length also includes any discontinuities in the groove t at may be present (when the groove happens to be a discontinuous groove).
  • the actual arc length and total arc length can be most readily calculated for each groove having a substantially constant radius ⁇ e.g. circular grooves); however, the actual and total arc length of a groove that does not have a substantially constant radius (e.g.. oval-shaped groove) ma still be readily calculated, as will be recognized by one of ordinary skill in the art.
  • a groove that completes a closed arc around a center of concentricity has a proportional arc length of 100%
  • the proportional arc length can be 10% or more, e.g., 15% or more, 20% or more, 25% or more, 30% or more, 35% or more, 40% or more, 45% or more, 50% or more, 55% or more, 60% or more, 65% or more, 70% or more, 75% or more, 80% or more, 85% or more, 90% or more, or 95% or more.
  • the proportional arc length can be 95% or less, e.g., 90% or less, 85% or less, 80% or less, 75% or less, 70% or less, 65% or less, 60% or less, 55% or less, 50% or less, 45% or less, 40% or less, 35% or less, 30% or less, 25% or less, 20% or less, or 1 5% or less.
  • the proportional arc length of a groove can be within the range bounded, by any two of the foregoing endpoinis.
  • the proportional arc length can be 25% to 85%, 35% to 50%, or 30% to 95%.
  • the proportional arc length is 30% or more.
  • a majority of the grooves in the plurality of grooves has the proportional arc length as defined herein.
  • 50% or more, e.g., 55% or more, 60% or more, 65% or more, 70% or more, 75% or more, 80% or more, 85% or more, 90% or more, 95% or more, or 100% of the grooves in the pluralit of grooves has the proportional arc length as defined herein.
  • the number of grooves having the proportional arc length as defined herein is calculated by summing the number of grooves having a substantially different radius in a region, and then, summing the number of grooves from each region in a polishing pad, thereby obtaining a total overall number of grooves.
  • the proportion of grooves having the proportional arc length as defined herein can then be calculated.
  • 80% or more of the grooves in the plurality of grooves has a proportional arc lengt of 30% or more.
  • Each groove in the plurality of grooves can have any suitable central angle.
  • the central angle of a groove is defined herein as the angle formed between the two ends of a groove (that terminate at the edges of the region containing the groove or the edge of the polishing pad) and the center of concentricity about which the groove is concentric, in which the center of concentricity is at the vertex of the angle.
  • the central angle is measured with respect to the side of the center of concentricity that faces the groove at issue (see, e.g., the description of FIG, 3 hereiiibelow to understand this concept).
  • Grooves that complete a closed arc around a center of concentricity have a central angle of 360°,
  • the central angle is 10° or more, e.g., 20° or more, 30 s or more, 40° or .more, 50° or more, 60° or more, 70° or more, SO" or more, 90° or more, 1.00° or more, 1 10° or more, 120° or more, 130° or more, 140° or more, 150° or more..
  • the central angle is 360° or less, e.g., 350° or less, 340° or less, 330° or less, 320° or less, 310° or less, 300° or less, 290* or less, 280° or less, 270° or less, 260° or less, 250° or less, 240° or less, 230° or less, 220° or less, 210" or less, 200° or less, 190° or less, 180° or less, .170° or less, 160° or less, 1.50° or less, 140° or less, 130° or less, 120° or less, 1 10° or less, 100° or less, 90° or less, 80° or less, 70 3 ⁇ 4 or less, 60° or less, 50° or less, 40° or less, 30° or less, or 20° or less.
  • the central angle can he within die range bounded by any two of the foregoing eodpoints.
  • the central angle can be 90° to 300°, 70° to 180°, or 170* to 210°. in a preferred embodiment, the central angle is 170° to 1 0° (e.g., 180°),
  • a majority of the groo ves in the plurality of grooves has the central angle as defined herein.
  • 50% or more, e.g., 55% or more, 60% or more, 65% or more, 70% or more, 75% or more, 80% or more, 85% or more, 90% or more, 95% or more, or 100% of the grooves in the plurality of grooves has the central angle as defined herein.
  • the number of grooves having the central angle as defined herein is calculated by summing the number of grooves Slaving a substantially different radius in a region, and then summing the number of grooves from each region in a polishing pad, thereby obtaining a total overall number of grooves.
  • the proportion of grooves having the central as defined herein can then be calculated.
  • 80% or more of the grooves in the plurality of groo ves has a central angle of 180° or more.
  • FIGS. 1-4 are merely for illustrative purposes to better understand the proportional arc length and central angle features. However, these descriptions of FIGS. 1-4 in this manner should not be construed as purporting that the dimensions and proportions represented in FIGS. 1-4 are representative of the dimensions and proportions of the polishing pad of the invention. [0089] With reference to FIG.
  • the first groove in the first plurality of concentric grooves 104 that is concentric about, and most proximal to, the first center of concentricity 106 has a proportional arc length of 50% (actual arc length divided by total arc length if the groove completed a closed arc about a center of concentricity).
  • This first groo ve also has a central angle of 180°.
  • the nest ten grooves in the first plurality of concentric grooves 104 that are most proximal to the first center of concentricity 1 6 also have a proportional arc length of 50% and a central angle of 180°.
  • the grooves in the second plurality'' of concentric grooves 105 can be characterized similarly. In this respect, a majority (e.g., 50% or more) of the grooves in the plurality of grooves in the polishing pad of FIG. I has a proportional arc length of 50% and a central angle of 180°.
  • the first groove in the first plurality of concentric grooves 104 that is concentric abo ut, and most proximal to, the fir st center of concentricity 206 has a proportional arc length of 50%. This first groove also has a central angle of 180°.
  • the next ten grooves in the first plurality of concentric grooves 204 that are most proximal to the first center of concentricity 206 also have a proportional arc length of 50% and a central angle of 180 .
  • the grooves in the second plurality of concentric grooves 205 can be characterized Similarly.
  • a majority (e.g., 50% or more) of the grooves in the plurality of grooves in the polishing pad of FIG. 2 has a proportional arc length of 50% or more and a central angle of 180° or more.
  • the first two grooves in the first plurality of concentric grooves 304 that are concentric about, and most proximal to, the first center of concentricity 306 have a proportional arc length of 100% and a central angle of 360°
  • the next ten grooves in the first plurality of concentric grooves 304 that are most proximal to the first center of concentricity 306 have a proportional arc length of 75% or more and a central angle of 300° or more.
  • the grooves in the second plural ty of concentric grooves 305 can be characterized similarly.
  • a majority (e.g., 50% or more) of the grooves in the plurality of grooves in the polishing pad of FIG. 3 has a proportional arc length of 75% or more and a central angle of 300° or more.
  • a majority (e.g., 50% or more) of the grooves in the first plurality of concentric grooves 404 and second plurality of concentric grooves 405 has a proportional arc length of 30% or more and a central angle of 1 0° or more.
  • the centers of concentricity can be located in any suitable area of the polishing pad.
  • One useful, way to visualize the locations of the centers of concentricity is to note the locations with respect to a virtual x-axis and a virtual y-axis that are overlaid on the polishing surface, wherein the virtual x-axis and the virtual y-axis intersect at a right angle at the axis of symmetry of the polishing pad.
  • the virtual x-axis and virtual y-axis can be overlaid on the polishing surface in any suitable manner and can intersect on the polishing surface at any suitable point, so as to facilitate an understanding of the locations of the polishing pad features, such as the locations of the centers of concentricity.
  • the virtual x-axis and virtual y-axis may intersect at a right angle at the axis of rotation, geometric center, or any arbitrary point on the polishing surface.
  • the virtual x-axis and the virtual y-axis may intersect at a location on the polishing pad, wherein the location is defined as a proportion, of the radius R of the polishing pad as measured from the axis of rotation of the polishing pad.
  • the location of intersection of the virtual x-axis and the virtual y-axis can be 0.05 , 0.1 R, 0.15 R, 0.2 R, 0,25 R, 0.3 R, 0.35 R 5 0.4 R, 0.45 R, 0.5 R, 0.55 R, 0.6 R, 0.65 R, 0.7 R, 0.75 R, 0.8 R, 0.85 R, 0.9 R, 0.95 R, or 1 R.
  • the locations of the features of the polishing pad can.
  • x and y coordinates in reference to a virtual x-axis and virtual y-axis comprise any suitable combination of the following x and y coordinates in reference to a virtual x-axis and virtual y-axis: x :::: 0, x > 0, x ⁇ 0, y ⁇ O, y > 0, and y ⁇ 0, Because the interface between, two abutting regions is formed only as a result of the two regions abutting one another, the interface, as defined herein, is understood to be a part of both, abutting regions., in this regard, when two regions abut at y ⁇ 0, one region is located at y 0 and the other region is located at y ⁇ 0.
  • the first center of concentricity is located at coordinates (x > 0, y > 0), (b) the first region is located at y > 0, and (c) the second region is located at y ⁇ 0.
  • fOG J when a virtual x-axis and a virtual y-axis are overlaid on the polishing surface in the plane of the polishing surface such thai (i) the x-axis and the y-axis intersect at a right angle at.
  • the first center of concentricity is located at coordinates (x > 0, y > 0)
  • the first center of concentricity is located at the interface or in the first region, the following conditions are satisfied: (a) the first plurality of concentric grooves emanates from the first center of concentricity in a +y direction, (b) the second plurality of concentric grooves emanates from the second center of concentricity in a -y direction, and (c) when the plurality of grooves is extended infinitely in the plane of the
  • the first plurality of concentric grooves is not symmetric with the second pluralit of concentric grooves by way of a mirror plane perpendicular to the polishing surface,
  • the first plurality of concentric grooves is not symmetric with the second pluralit of concentric grooves by way of a mirror plane perpendicular to the polishing surface,
  • the first center of concentricity is located at the coordinates (x 0, y > 0)
  • the first center of concentricity is located at the interface or in the first region
  • the direction in which grooves emanate is determined by summing the combined length of ail of the grooves at issue (e.g., all of the grooves in a given region), and determining the proportion of the combined length that emanates in a given direction.
  • the direction that a groove emanates at a given point along the groove is determined by the direction of a line perpendicular to the tangent at the given point along the groove, i f substantial portion (e.g., at least 50%, at least 60%, at least 70%, at least 80%, at least 90%, or 100%) of the grooves at issue emanate in a given direction, then the giooves at issue are said to emanate in the given direction.
  • grooves are typically discussed herein as emanating in either (a) a ⁇ y direction or a -y direction, or (b) a +x direction or a -x direction, it is typically true that the grooves emanating in (a) a +y direction or a— direction may also emanate in (b) a ⁇ x direction and or a -x direction.
  • the grooves of the inventive polishing pad can be described as emanating in a direction that combines the descriptors +y, -y, +x ., and or -x, in any suitable combination, in order to describe the polishing pad of the invention,
  • the second region 309 is located at x ⁇ 0, (e) the first plurality of concentric grooves 304 emanate from the first center of concentricity 306 in a +y direction, and if) the second plurality of concentric grooves 305 emanate from the second center of concentricity 307 in a -y direction. (001 2 ⁇ With reference to FIG, 4, when a virtual x-axis and a virtual y-axis are overlaid on the polishing surface 400 in the plane of the polishing surface 400 such that the x-axis and the y-axis intersec t at a tight angle at the axis of symmetry 403..
  • the first center of concentricity 406 is located at coordinates (x ⁇ 0, y ⁇ 0)
  • the second center of concentricity 407 is located at coordinates (x > 0, y - 0)
  • th e firs t region 408 is located at x
  • the second region 409 is located at x ⁇ 0, (e) the first plurality of concentric grooves 404 em nate from the first center of concentricity 406 in a +y directi n, and (f) the second piurality of concentric grooves 405 emanate from the second center of concentricity 407 in a - y direction.
  • the plurality of grooves does not comprise, consist essential ly of, or consist of a continuous spiral groove.
  • the type of continuous spiral grooving patterns not encompassed by the invention are described in U.S. Patent 7,377,840 to Deopura et al., hereby incorporated by reference in its entirely.
  • the polishing surface does not comprise, consist essentially of, or consist of & mosaic groove pattern .
  • the type of mosaic groove pattern not encompassed by the invention is described in U.S. Patent 7,252,552 to Renteln, hereby incorporated by reference in its entirety.
  • the polishing pad of the invention can comprise, consist essentially of, or consist of any suitable materia!.
  • the material can be any suitable polymer and/or polymer resin.
  • the polishing pad can comprise eiasioraers, polyuremanes, polyolefms, polycarbonates, polyvmylalcoholS nylons, elastomeric rubbers, styrenk polymers, polyaromatics,
  • fluoropolyraers polyiraides, cross-linked polyurethanes, cross-linked poiyolefius, polyethers, polyesters, poiyacrylaies, elastomerie polyethylenes, poiytetrafl uoroethyienes,
  • polyethyleneteraphthalates polytraides, polyara ides, polyarylenes, polystyrenes,
  • the polymer and/or polymer resin can be a thermoset or thermoplastic polymer and/or polymer resin.
  • Polishing pads comprising thermoplastic polymers such as thermoplastic polyurethanes, generally result in polished substrates having lower defects than, a substrate polished with a polishing pad comprising a thermoset polymer.
  • polishing pads comprised of thermoplastic polymers generally exhibit a lower pol ishing rate than comparable polishing pads comprised of ihermoset polymers, which lower polishing rate can adversely affect the time and costs associated with the polishing process.
  • the material comprises a thermoplastic polyurethane (e.g., EPIC D I OO available from Cabot Microelectronics
  • the polishing pad of the invention can be produced by any suitable method known in the art.
  • the polishing pad can be formed by film or sheet extrusion, injection molding, blow molding, thermof rrning, compression molding, co-extrusion molding, reaction injection .molding, profile extrusion molding, rotational molding, gas injection molding, film insert molding, foaming, casting, compression, or any combination thereof.
  • a thermoplastic material e.g., a thermoplastic polyurethane
  • the thermoplastic material can be heated to a temperature at which it will flow and is then formed into a desired shape by, for example, casting or extrusion.
  • the plurality of grooves can be formed in the polishing pad of the invention in any suitable manner known in the art.
  • the plurality of grooves may be formed by molding, machine cutting, laser cutting, and combinations thereof.
  • the grooves may be molded at the same time as the fab.ricatio.ii of a polishing pad, or the pol ishing pad may first be fabricated, and then either (a) a grooving pattern molded on the surface of the polishing pad so as to form the polishing surface, or (fa) a grooving pattern formed in a separate layer by any suitable means, which separate layer is then affixed by any suitable means to the surface of the poiishing pad to form the polishing surface.
  • the polishing pad is typically formed first, and then a catting tool or laser tool, respectively, produces grooves of a desired shape in the polishing surface of the polishing pad.
  • Suitable grooving techniques are described in, e.g., U.S. Patent 7,234,224 to Mangier et aL, hereby incorporated by reference in its entirety,
  • the polishing pad of the invention may contain a light-transmitting region through which light may pass in order to monitor the polishing progress by way of an in situ end-point detection (EPD) system, e.g., to determine when a desired degree of planari ation has been attained.
  • the Sight-transmitting region typically is in the form of an aperture or window that has trans iucency to light, which allows light that has passed through the light-transmitting region to be detected by the EPD system.
  • Suitable light-transmitting regions that may be used with the poiishing pad of the invention are described in U.S. Patent 7,634,933 to Benvegnu et al. s hereby incorporated by reference in its entirety.
  • the plurality of grooves may or may not be provided on the surface of the light-transmitting region, depending on the manufacturing method and the desired properties of the polishing pad and/or light-transmitting region.
  • the polishing pad of the invention can comprise the plurality of grooves as described herein in combination with any suitable grooving pattern knoxvn in the art.
  • the inventive grooving pattern can be combined with one or multiple x-axls grooves, one or multiple y-axis grooves, grooves concentric about the axis of rotation, grooves that intersect at or near the axis of rotation of the polishing pad and exit at the edge of the poiishing pad (so as to form a pizza-tike groove pattern), and combinations thereof
  • the invention also provides a method of chemical-mechanically polishing a substrate, which method comprises, consists essential ly of, or consists of (a) contacting a substrate with a poiishing pad of the invention as described herein and a chemical -mechanical polishing composition, (b) moving the polishing pad relative to the substrate with the chemical-mechanical polishing composition therebetween, and (c) abrading at least a portion of the substrate to polish the substrate.
  • the removal rate of the substrate is higher when employing the polishing pad of the invention, as compared to when employing an otherwise identical polishing pad that does not contain the plurali ty of grooves, as described herein.
  • the remo val rate employing the polishing pad of the invention is compared to a polishing pad having a concentric grooving pattern (in which the polishing pad contains a plurality of grooves concentric about an axis of symmetry that is coincident with the axis of rotation of the polishing pad), or a polishing pad having no grooving patterns whatsoever.
  • the material of the comparative polishing pad is the same as the material comprising the inventive polishing pad.
  • the higher removal rate can be represented as a relative removal rate that is calculated by dividing the removal rate when employing the polishing pad of the invention by the removal rate when employing an otherwise identical polishing pad that does not contain the plurality of grooves as described herein.
  • the relative removal rate when employing the polishing pad of the invention is 1.02 or more, e.g., 1.04 or more, 1.06 or more, 1.08 or more. L I.
  • the relative removal rate is 5 or less, e.g., 4.5 or less, 4 or less, 3.5 or less, 3 or less, 2.8 or less, 2.6 or less, 2.4 or less, 2.2 or less, 2 or less, 1.95 or less,, 1.9 or less, 1.85 or less, 1.8 or less, 1.75 or less, 1.7 or less, 1.65 or less, 1.6 or less, .1.55 or less, 1.5 or less, 1.48 or less, 1.46 or less, ⁇ .44 or less, 1.42 or less, 1.4 or less, 1.38 or less.
  • the relative removal rate can be within the range bounded by any two of the foregoing endpoints.
  • the relative removal rate can be 1 ,06 to 1.3, 1.75 to 2, or 3 to 5.
  • Any suitable flow rate of slurry can be employed in the method.
  • the flow rate can be 50 mL/min or more, e.g., 60 mL min or more, 70 mL min or more, 80.mL/min or more, 90 mL/min or more, 100 mL/min or more, i 10 mL/min or more. 120 mL/min or more, 130 mL/min or more, 140 mL/min or more, or 150 mL/min or more.
  • the slurry flow rate can be 160 mL/min or less, e.g., 150 mL min or less, 140 raL min or less, 130 mL/min or less, 120 mL min or less, 1. 10 mL/min or less, 100 mL min or less. 90 mL/min or less, 80 raL min or less, 70 mL/min or less, or 60 mL min or less.
  • the slurry flow rate can be within the range bounded by any two of the foregoing endpoints.
  • the slurry flow rate can be 60 mL/min to 140 mL/min, 50 mL/min to 120 mL min, or 100 mL/mi to 1 10 mL/min.
  • the slurry flow rate is 90 mL min to 120 mL/min. It was surprisingly found that, when employing a polishing pad of the invention in a polishing process, the polishing rate was minimally affected, or even increased, when the flow rate was decreased by 25% (see, e.g., the Example herein). Without wishing to be bound by any theory, it is believed thai a polishing pad.
  • the polishing slurry of the invention is able to retain the polishing slurry for & longer amount of time than conventionally grooved polishing pads, thereby resulting in a lower slurry flow requirement for a polishing pad of the invention i order to obtain a similar polishing rate.
  • any suitable substrate or substrate material can be employed in the method.
  • the substrates include memory storage devices, semiconductor substrates, and glass substxates.
  • Suitable substrates for use in the method include memory disks, rigid disks, magnetic heads, MEMS devices, semiconductor wafers, field emission displays, and other microelectronic substrates, especially substrates comprising insulating layers (e.g., silicon dioxide, silicon nitride, or low dielectric materials) and/or metal-containing layers (e.g., copper, tantalum, tungsten, aluminum, nickel, titanium, platinum, ruthenium, rhodium, iridium or other noble metals).
  • insulating layers e.g., silicon dioxide, silicon nitride, or low dielectric materials
  • metal-containing layers e.g., copper, tantalum, tungsten, aluminum, nickel, titanium, platinum, ruthenium, rhodium, iridium or other noble metals.
  • the substrate comprises tungsten.
  • the method can utilize any suitable polishing composition.
  • the polishing composition can be any suitable polishing composition.
  • aqueous carrier typically comprises an aqueous carrier, a pH adjuster, and optionally an abrasive.
  • the polishing composition optionally can further comprise oxidizing agents, organic or inorganic acids, coraplexrag agents, pH buffers. surfactanis, corrosion inhibitors, aiiti-foaming agents, and the like.
  • a preferred polishing composition comprises colloidally stable fumed silica as an abrasive, hydrogen peroxide as an oxidizing agent, and water (e.g., the slurry SEMI- SPE SE W2000 available from Cabot icroelectronics Corporation).
  • the polishing pad of the invention can be rotated in the method in any suitable direction .
  • the polishing pad when viewing the polishing surface of the polishing pad from a direction perpendicular to the polishing surface, the polishing pad can be rotated in a clockwise direction or a counterclockwise direction.
  • the polishing pad of the invention when the plurality of grooves ts extended infinitely in the plane of the polishing surface, and the plurality of grooves are symmetric by way of a mirror plane perpendicular to the polishing surface, the polishing pad typically can be rotated in either the clockwise direction or the counterclockwise direction, and similar or the same polishing results typically will be achieved (e.g., similar or same polishing rate, slurry distribution, waste removal, etc.).
  • the polishing pad typically can be rotated in any direction without any significant impact on polishing results.
  • the rotation direction typically has an effect on the polishing results
  • a polishing pad meeting the following criteria typically will be rotated in the method in a clockwise direction when viewing the polishing surface from a direction perpendicular to the polishing surface: a polishing pad of the in vention wherein., when a virtual x-axis and a virtual y-axis are overlaid on the polishing surface in the plane of the polishing surface such thai the x-axis and the y-axis mtersect at a right angle a t the axis of symmetry, the following conditions are satisfied: (a) a first center of concentricity is located at coordinates (x > 0, y > 0), (b) the first region is located at y > 0, and c) the second region is located at y ⁇ 0. In some embodiments, however, it may be preferable to rotate the polishing pad in a
  • a polishing pad meeting the following criteria typically also will be rotated in the method in clockwise direction when viewing the polishing surface from a direction perpendicular to the polishing surface: a polishing pad of the invention wherein, whe a virtual x-axis and a virtual y-axis are overlaid on the polishing surface in the plane of the polishing surface such that (i) the x-axis and the y-axis intersect at a right angle at the axis of symmetry, (it) a first center of concentricity is located at coordinates (x > 0.
  • a first center of concentricity is located at the interface or in the first region, the following conditions are satisfied: (a) the first plurality of concentric grooves emanates from the first center of concentricity in a +y direction, (b) the second plurality of concentric grooves emanates from the second center of concentricity in a - y direction, and (c) when the plurality of grooves is ex tended infinitely in the plane of the polishing surface, the first plurality of concentric grooves is not symmetric with the second plurality of concentric grooves by way of a mirror plane perpendicular to the polishing surface. In some embodiments, however, it may be preferable to rotate the polishing pad in a counterclockwise direction.
  • a polishing pad meeting the following criteria typicall will be rotated in the method in a counterclockwise direction when viewing the polishing surface from a direction perpendicular to the polishing surface: a polishing pad of the invention wherein, when a virtual x-axis and a virtual y-axis are overlaid on the polishing surface in the plane of the polishing surface such that the x-axis and the y-axis intersect at a right angle at the axis of symmetry, t e following conditions are satisfied: (a) a first center of concentricity is located at coordinates (x ⁇ 0, y > 0), (h) the first region is located at y > O, and (c) the second region is located at y ⁇ 0. in some embodiments, however, it may be preferable to rotate the polishing pad in a clockwise direction.
  • a polishing pad meeting the following criteria typically also will be rotated in the method in a counterclockwise direction when viewing the polishing surface from a direction perpendicular to the polishing surface: a polishing pad of the invention wherein, when a virtual x-axis and a virtual y-axis are overlaid on the polishing surface in the plane of the polishing surface such that (i) the x-axis and the y-axis intersect at a right angle at the axis of symmetry, (ii) a first center of concentricity is located at the coordinates (x ⁇ 0, y > 0), and (iii) a first cente of concentricity is located at the interface or in the first region, the following conditions are satisfied: (a) the first plurality of concentric grooves emanates from the first center of concentricity in a +y direction, (b) the second plurality of concentric grooves emanates from the second center of concentricity in a
  • the polishing pad depicted in FIG. 1. typically will be rotated in a clockwise direction when viewing the polishing surface from a direction perpendicular to the polishing surface.
  • the polishing pad depicted in FIG. 2 typically will be rotated in a counterclockwise direction when viewing the polishing surface from a direction perpendicular to the polishing surface.
  • the polishing pads depicted in FIGS. 3 and 4 typically can be rotated in either a clockwise direction or a counterclockwise direction.
  • Polishing pads having the features described herein result in a variety of
  • Conventional grooving patterns include, for example, concentric grooves (grooves concentric about an axis of symmetric that is coincident with the axis of rotation of the polishing pad), XY grooves (grooves consisting of one x-axis grooves and multiple y-axis grooves), and concentric+XY (grooves consisting of the "concentric” grooves plus the "XY” grooves overlaid on the same polishing pad).
  • a polished substrate produced using the inventive polishing pad described herein has an excellent degree of planarity and low defects, making the inventive polishing pad suitable for use in CMP processes designed to produce polished substrates for a variety of applications.
  • This example demonstrates the improved polishing rate obtained when using polishing pads of the invention in a polishing process, as compared to using a conventional polishing pad in the polishing process. This example also demonstrates that the polishing rate surprisingly stays about the same or increases when the slurry flow rate is decreased when using the polishing pads of the invention. Additionally, this example demonstrates that the rotation direction has an effect o the polishing rate when using certain polishing pads of the invention in a polishing process.
  • chemical-mechanical polishing was performed using a 200 mm Mirra polishing tool available from Applied Materials using the following process conditions: a membrane pressure of 29 kPa, an inner tube pressure of 45 kPa, a retaining ring pressure of 52 kPa, a platen speed of 1 13 rotations per minute (rpm), a head speed of 1 1 1 rpm, and a polishing time of 60 sec.
  • the chemical-mechanical polishing slurry comprised colloidaUy stable fumed silica as an abrasive, hydrogen peroxide as an oxidizing agent, and water (e.g., the slurry SEMl- S PERSE W2000 available from Cabot Microelectronics Corporation).
  • the substrate comprised, a blanket layer of tungsten.
  • the polishing pads were rotated in the polishing process in a clock wise direction when viewing the polishing surface of the polishing pad from a direction perpendicular to the polishing surface.
  • All of the polishing pads were comprised of a thermoplastic polyurethane (e.g., EPIC Di OG available from Cabot Microelectronics Corporation), and ail of the polishing pads contained a plurality of grooves.
  • Each groove in the plurality of grooves had a depth of 760 microns (i.e., 30 mils), a width of 500 microns ⁇ i.e., 20 mils), and each groove was separated from an adjacent groove by a pitch of 2030 microns (i.e., 80 mils).
  • the grooving patterns were formed in the polishing pads by a conventional machine cutting technique.
  • the polishing pads in this example differed only with respect to the arrangement of the grooves on the polishing surface (i.e., the grooving pattern).
  • the control polishing pad contained a plurality of grooves concentric about the axis of rotation of the control polishing pad.
  • Polishing Pads 1 -4 of the invention contained the grooving patterns depicted in FIGS. 1-4, respectively.
  • FIGS. 1-4 are merely illustrative of the types of grooving patterns of polishing pads of the invention in this example so as to facilitate an understanding of the inventive grooving patterns: however, the dimensions and proportions represented in FIGS, 1-4 are not necessarily representative of the actual dimensions and proportions of a polishing pad of the invention.
  • the Control Polishing Pad and the Inventive Polishing Pads 1 -4 were employed in the polishing process using a slurry flow rate of .120 mUmin and a slurry flow rate of 90 ⁇ ,/rnin.
  • the polishing process was performed eight times at each slurry flow rate using the Control Polishing Pad, and the eight polishing results for each slurry flow rate were averaged.
  • the polishing process was performed three times for each inventive Polishing Pad 3-4 at each slurry flow rate, and the three polishing results for each of In ventive Polishing Pads 1-4 at each slurry flow rate were averaged.
  • the absolute and relative removal rates are reported in Table i and are also depicted graphically in FIG. 7.
  • Polishing Pads 3 -4 were employed in the polishing process, as compared to the removal rates when the Control Polishing Pad was employed in the process. Moreover, when the Control Polishing Pad was used, the removal rate predictably decreased when the slurry flow rate was lowered from 120 mL/rain to 90 mL raia.
  • inventive Polishing Pads i-4 were employed, lowering the slurry flow rate from 120 mL min to 90 mL/min either had little effect on the removal rate ⁇ see Inventive Polishing Pads 2 and 4) or the removal rate surprisingly increased (see Inventive Polishing Pads I and 3), thereby suggesting that the slurry was retained on the polishing surface of Inventive Polishing Pads 3 -4 for a longer amount of time than the Control Polishing Pad.
  • inventive Polishing Pad 2 the removal rate when using inventive Polishing Pad 1 was significantly higher than when its mirror image (i.e., inventive Polishing Pad 2) was employed, indicating that the rotation direction of the polishing pad can have a significant effect, on the removal rate in the situation where the polishing pads do not have a mirror plane perpendicular to the polishing surface.
  • polishing pads of the invention inter alia, (a) exhibit a. higher removal, (b) require less slurry as a result of. inter alia, longer slurry retention times, and (c) can exhibit different removal rates depending on rotation direction in the situation where the polishing pad does not contain a mirror plane perpendicular to the polishing surface of the polishing pad,

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
PCT/US2013/068523 2012-11-06 2013-11-05 Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith Ceased WO2014074521A1 (en)

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CN201380058083.3A CN104781913B (zh) 2012-11-06 2013-11-05 具有偏移的同心凹槽图案的抛光垫以及使用其抛光基板的方法
KR1020157014705A KR102148050B1 (ko) 2012-11-06 2013-11-05 오프셋 동심형 그루빙 패턴을 갖는 폴리싱 패드, 및 이로써 기판을 폴리싱하는 방법
SG11201503496YA SG11201503496YA (en) 2012-11-06 2013-11-05 Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith
US14/440,209 US9687956B2 (en) 2012-11-06 2013-11-05 Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith
JP2015541855A JP6336997B2 (ja) 2012-11-06 2013-11-05 オフセットした同心の溝のパターンを有する研磨パッドおよびそれを用いて基材を研磨するための方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE46648E1 (en) 2008-07-09 2017-12-26 Iv Technologies Co., Ltd. Polishing pad, polishing method and method of forming polishing pad

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101455919B1 (ko) * 2013-01-18 2014-11-03 주식회사 엘지실트론 웨이퍼 양면 연마 장치의 정반 구조
US20170232573A1 (en) * 2016-02-12 2017-08-17 Kabushiki Kaisha Toshiba Polishing member and semiconductor manufacturing method
US10864612B2 (en) * 2016-12-14 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing pad and method of using
US10861702B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Controlled residence CMP polishing method
US10857647B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings High-rate CMP polishing method
US10777418B2 (en) * 2017-06-14 2020-09-15 Rohm And Haas Electronic Materials Cmp Holdings, I Biased pulse CMP groove pattern
US10857648B2 (en) * 2017-06-14 2020-12-08 Rohm And Haas Electronic Materials Cmp Holdings Trapezoidal CMP groove pattern
US12048980B2 (en) * 2017-08-25 2024-07-30 3M Innovative Properties Company Surface projection polishing pad
TWI642516B (zh) * 2017-10-02 2018-12-01 智勝科技股份有限公司 研磨墊以及研磨方法
CN108381331B (zh) * 2018-03-22 2020-02-18 大连理工大学 一种平面零件全局修形加工装置和方法
US11298794B2 (en) * 2019-03-08 2022-04-12 Applied Materials, Inc. Chemical mechanical polishing using time share control
CN112548845B (zh) * 2021-02-19 2021-09-14 清华大学 一种基板加工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010002471A (ko) * 1999-06-15 2001-01-15 고석태 화학적 기계적 폴리싱 장치용 폴리싱 패드의 그루브 패턴
KR20010035983A (ko) * 1999-10-05 2001-05-07 고석태 다양한 표면 그루브패턴을 갖는 연마패드
US6736709B1 (en) * 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
US20060046626A1 (en) * 2004-08-25 2006-03-02 Peter Renteln Optimized grooving structure for a CMP polishing pad
US20080211141A1 (en) * 2004-07-21 2008-09-04 Manish Deopura Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5842910A (en) * 1997-03-10 1998-12-01 International Business Machines Corporation Off-center grooved polish pad for CMP
US6913517B2 (en) 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
JP2007007771A (ja) 2005-06-30 2007-01-18 Mitsubishi Materials Techno Corp 研磨パット及び研磨機
US7226339B2 (en) 2005-08-22 2007-06-05 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
KR100882045B1 (ko) * 2006-02-15 2009-02-09 어플라이드 머티어리얼스, 인코포레이티드 그루브형 서브패드를 구비한 폴리싱 장치
US7234224B1 (en) * 2006-11-03 2007-06-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Curved grooving of polishing pads
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
TWI449597B (zh) * 2008-07-09 2014-08-21 Iv Technologies Co Ltd 研磨墊及其製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010002471A (ko) * 1999-06-15 2001-01-15 고석태 화학적 기계적 폴리싱 장치용 폴리싱 패드의 그루브 패턴
KR20010035983A (ko) * 1999-10-05 2001-05-07 고석태 다양한 표면 그루브패턴을 갖는 연마패드
US6736709B1 (en) * 2000-05-27 2004-05-18 Rodel Holdings, Inc. Grooved polishing pads for chemical mechanical planarization
US20080211141A1 (en) * 2004-07-21 2008-09-04 Manish Deopura Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US20060046626A1 (en) * 2004-08-25 2006-03-02 Peter Renteln Optimized grooving structure for a CMP polishing pad

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE46648E1 (en) 2008-07-09 2017-12-26 Iv Technologies Co., Ltd. Polishing pad, polishing method and method of forming polishing pad

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TW201429621A (zh) 2014-08-01
CN104781913B (zh) 2017-10-20
US9687956B2 (en) 2017-06-27
KR20150082463A (ko) 2015-07-15
JP6336997B2 (ja) 2018-06-06
SG11201503496YA (en) 2015-06-29
TWI633970B (zh) 2018-09-01
KR102148050B1 (ko) 2020-10-14
JP2015533668A (ja) 2015-11-26
US20150298287A1 (en) 2015-10-22

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