WO2014071839A1 - 发光二极管及其制作方法 - Google Patents

发光二极管及其制作方法 Download PDF

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WO2014071839A1
WO2014071839A1 PCT/CN2013/086615 CN2013086615W WO2014071839A1 WO 2014071839 A1 WO2014071839 A1 WO 2014071839A1 CN 2013086615 W CN2013086615 W CN 2013086615W WO 2014071839 A1 WO2014071839 A1 WO 2014071839A1
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layer
light emitting
metal isolation
emitting diode
current spreading
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PCT/CN2013/086615
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English (en)
French (fr)
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尹灵峰
林素慧
郑建森
刘传桂
欧毅德
王庆
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厦门巿三安光电科技有限公司
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Publication of WO2014071839A1 publication Critical patent/WO2014071839A1/zh
Priority to US14/643,394 priority Critical patent/US9337384B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

  • the present invention relates to a light emitting diode and a method of fabricating the same, and more particularly to a light emitting diode having alternating adhesion layer electrodes and a method of fabricating the same.
  • LEDs Light-emitting diodes
  • III-V Group compounds are currently the mainstream semiconductor materials used in the fabrication of light-emitting diodes, with gallium nitride based materials and aluminum gallium indium phosphorus based materials being the most common.
  • Traditional P-type III-V The current spreading performance of the semiconductor material is generally poor. In order to allow the current to be uniformly injected into the light-emitting layer, a current spreading layer needs to be applied to the p-type material layer.
  • ITO indium tin oxide
  • CTO cadmium tin oxide
  • InO indium oxide
  • ZnO zinc oxide
  • ITO Indium Tin Oxide
  • ITO film indium tin oxide semiconductor transparent conductive film
  • resistivity and transmittance due to ITO It has the characteristics of low resistivity and high light transmittance at the same time, and meets the requirements of good conductivity and light transmittance.
  • ITO Has good chemical stability and thermal stability. Good adhesion to the substrate and graphic processing characteristics.
  • a substrate 100, a first confinement layer 101 stacked from bottom to bottom, and a light-emitting layer are included.
  • an N electrode 106 (including the first metal isolation layer 110, the second metal isolation layer 111, and the metal surface layer 112) disposed on the exposed surface of the first confinement layer 101 ).
  • the adhesion between the current diffusion layer and the P electrode material is poor, and due to this feature, the current diffusion layer and P are easily caused.
  • the phenomenon of film detachment between the electrode materials affects the reliability of the light-emitting diode, which greatly affects the yield of the product.
  • the present invention aims to provide a light emitting diode having alternating adhesion layer electrodes and a method of fabricating the same.
  • a light emitting diode includes: a substrate; a light emitting epitaxial layer formed by stacking layers of a semiconductor material, formed on the substrate; and a first current spreading layer formed on the light emitting epitaxial layer
  • the second current spreading layer and the first metal isolation layer alternately form an adhesion layer formed on the first current spreading layer; the second metal isolation layer is formed on the second current spreading layer and the metal isolation layer alternately deposited as an adhesion layer Above; a metal electrode layer formed on the second metal isolation layer.
  • the adhesion layer alternately deposited between the second current expansion layer and the first metal isolation layer is composed of three structural layers, the first layer is composed of a second current expansion layer, and the second layer is composed of a second current expansion layer and the first layer.
  • the metal isolation layers are alternately composed, and the third layer is composed of the first metal isolation layer.
  • the first current spreading layer has a thickness of 500 to 5000 ⁇ .
  • the first layer has a thickness of 100 to 800 ⁇ .
  • the second layer has a thickness of 50 to 200 ⁇ .
  • the third layer has a thickness of 100 to 500 ⁇ .
  • an adhesion layer of the second current spreading layer and the first metal isolation layer is formed by magnetron sputtering.
  • the alternating layers of the second current spreading layer and the first metal isolation layer alternately have 6 to 20 layers.
  • the material of the first current spreading layer is selected from indium tin oxide (ITO) or zinc oxide (ZnO) or cadmium tin oxide (CTO) Or indium oxide (InO) or indium (In) doped zinc oxide (ZnO) or aluminum (Al) doped zinc oxide (ZnO) or gallium (Ga) doped zinc oxide (ZnO) One of them.
  • the material of the second current spreading layer is the same as the material of the first current spreading layer.
  • the first metal isolation layer is one of Cr, Ti, Pt, Ni, and W.
  • the second metal isolation layer is one of Cr, Ti, Pt, Ni, and W.
  • a method of fabricating a light emitting diode includes the steps of: providing a substrate, epitaxially growing a light emitting epitaxial layer, and stacking a layer of semiconductor material; forming a first current spreading layer on the light emitting epitaxial layer; Forming, on the first current spreading layer, an adhesion layer alternately between the second current spreading layer and the first metal isolation layer by using a magnetron sputtering method; forming a second metal isolation layer on the first metal isolation layer; A metal electrode layer is formed on the second metal isolation layer; finally, an annealing heat treatment is performed.
  • the adhesion layer of the second current expansion layer and the first metal isolation layer is composed of three structural layers, the first layer is composed of the second current expansion layer, and the second layer is composed of the second current expansion layer and the first layer.
  • the metal isolation layers are alternately composed; the third layer is composed of the first metal isolation layer.
  • the first layer is formed by magnetron sputtering, the coating rate is 0.1 ⁇ 1 ⁇ /s, and the thickness of the first layer formed is 100 ⁇ 800 ⁇ . .
  • a second layer is formed by magnetron sputtering, the coating rate is 0.1 to 0.5 ⁇ /s, and the thickness of the second layer formed is 50 ⁇ 200 ⁇ .
  • a third layer is formed by magnetron sputtering, the coating rate is 0.1 ⁇ 1 ⁇ /s, and the thickness of the third layer formed is 100 ⁇ 500 ⁇ . .
  • the annealing heat treatment temperature is 200 to 400 °C.
  • FIG. 1 is a schematic structural view of a conventionally mounted LED chip.
  • FIG. 2 is a schematic view showing the structure of an LED chip having alternating adhesion layer electrodes according to an embodiment of the present invention.
  • FIG 3 is a schematic view showing the structure of an alternating adhesion layer electrode according to an embodiment of the present invention.
  • FIG. 4 is a flow diagram of a light emitting diode chip having alternating adhesion layer electrodes in accordance with an embodiment of the present invention.
  • the core idea of the present invention is to provide a light emitting diode and a manufacturing method thereof, the structure comprising a substrate, a light emitting epitaxial layer, a first current spreading layer, and an alternating layer of the second current spreading layer and the first metal isolation layer, Two metal isolation layers and metal electrode layers.
  • the adhesion layer is composed of three structural layers: the first layer is composed of a second current expansion layer, and the second layer is composed of an incompletely continuous second current expansion layer and a first metal isolation layer, and the third layer is composed of The first metal isolating layer is composed.
  • the adhesion layer can be formed by magnetron sputtering, and the plating rate can be easily controlled. After the sputtering is completed, an annealing heat treatment is performed.
  • the first metal isolation layer in the second layer which is originally incompletely continuous film shape is relatively thin and has a void during the annealing heat treatment, it is easy to cause the second current expansion layer in the second layer to grow laterally and longitudinally, A crystal is formed with a first metal isolation layer in a portion of the second layer interposed therebetween, so that the second current spreading layer of the second layer is interposed with the first metal isolation layer.
  • the first layer (second current spreading layer) is the same as or similar to the material of the first current spreading layer, that is, the adhesion is good.
  • the adhesion layer of the second current expansion layer and the first metal isolation layer thus formed has better adhesion to the first current expansion layer than to the pure metal isolation layer and the current expansion layer film, thereby reducing the light emitting diode
  • the ratio of the off electrode enhances the reliability of the operation of the LED.
  • the following embodiments disclose a light emitting diode and a method of fabricating the same, the light emitting diode comprising: a substrate; an epitaxial layer formed by stacking layers of semiconductor material, formed on the substrate; first current spreading a layer formed on the luminescent epitaxial layer; an adhesion layer alternately between the second current expansion layer and the first metal isolation layer is formed on the first current expansion layer; and a second metal isolation layer is formed on the second current extension layer The layer is overlying the adhesion layer deposited by the metal isolation layer; the metal electrode layer is formed on the second metal isolation layer.
  • the adhesion layer alternately deposited by the second current expansion layer and the first metal isolation layer is composed of three structural layers: the first layer is composed of a second current expansion layer, and the second layer is separated from the first metal by the second current expansion layer The layers are alternately composed, and the third layer is composed of a first metal isolation layer.
  • the following embodiment further provides a manufacturing method including the following steps:
  • Step S11 providing a substrate, comprising: epitaxially growing an illuminating epitaxial layer, which in turn comprises a first confinement layer, a luminescent layer, and a second confinement layer;
  • Step S12 forming a first current spreading layer in the light emitting epitaxial layer
  • Step S13 forming an alternating adhesion layer between the second current spreading layer and the first metal isolation layer on the first current spreading layer;
  • Step S14 forming a second metal isolation layer on the alternating layer of the second current expansion layer and the first metal isolation layer;
  • Step S15 forming a metal electrode layer on the second metal isolation layer
  • step S16 an annealing heat treatment is performed.
  • FIG. 2 is a cross-sectional view showing the structure of an LED structure according to a first embodiment of the present invention.
  • the substrate 200 The material may be selected from the group consisting of a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, and a zinc oxide substrate.
  • the substrate 200 Select the sapphire substrate.
  • An epitaxial layer is deposited on the substrate 200
  • the material of the epitaxial layer may include a gallium nitride-based material, a gallium phosphide-based material, a gallium phosphide-based material, or a zinc oxide-based material.
  • the epitaxial layer is a gallium nitride-based material, and the epitaxial layer includes a first confinement layer stacked in this order from bottom to top.
  • the first limiting layer 201 is an N-type gallium nitride (GaN) layer structure
  • the light emitting layer 202 is aluminum gallium nitride (AlGaN) a multi-quantum well active layer
  • the second confinement layer 203 is a P-type AlGaN layer.
  • the epitaxial layer structure in this embodiment is not limited to the buffer layer - the N-type GaN layer structure - the AlGaN multi-quantum well active layer -P type AlGaN layer, other epitaxial layer structure that can excite light, such as N-type GaN layer - (InGaN) / GaN multiple quantum well active layer - P type GaN Layers are also within the scope of the inventive idea.
  • the first current spreading layer 204 is formed on the second limiting layer 203, and the material of the first current spreading layer 204 may be selected from indium tin oxide (ITO) or zinc oxide ( ZnO) or cadmium tin oxide (CTO) or indium oxide (InO) or indium (In) doped zinc oxide (ZnO) or aluminum (Al) doped zinc oxide (ZnO) or gallium (Ga)
  • ITO indium tin oxide
  • ZnO zinc oxide
  • CTO cadmium tin oxide
  • ITO indium oxide
  • InO indium oxide
  • ZnO aluminum
  • ZnO aluminum
  • Ga gallium
  • an adhesion layer 210 in which the second current spreading layer and the first metal isolation layer are alternately disposed is disposed on the exposed first confinement layer 201.
  • the second current spreading layer and the first metal isolation layer alternately have an adhesion layer 207 composed of three structural layers (210 and 207).
  • the material and the thickness are the same, and the specific three major structural layers are not shown in the figure.
  • the first layer 207a is composed of the second current spreading layer, and the material is indium tin oxide (ITO), which is the same as the first current spreading layer 204, and has a thickness of 300 ⁇ , the plating rate of magnetron sputtering is 0.1 ⁇ 1 ⁇ /s;
  • the second layer 207d is composed of the second current expansion layer and the first metal isolation layer, that is, the first ITO second current expansion layer is plated with 10 ⁇ thickness.
  • magnetron sputtering method plating rate is 0.1 ⁇ 0.5 ⁇ /s
  • plating 10 ⁇ thick Cr first metal isolation layer 207c, magnetron sputtering method plating rate is 0.1 ⁇ 0.5 ⁇ /s 5 times, the number of layers is 10 layers
  • the third layer 207e is composed of the first metal isolation layer, the material is selected from chromium (Cr), the thickness is 300 ⁇ , and the plating rate of magnetron sputtering is 0.1 ⁇ 1 ⁇ /s. .
  • Second metal isolation layer 208 and 211 material selected platinum (Pt ) are respectively formed on the adhesion layers 207 and 210 of the second current expansion layer and the first metal isolation layer; the metal surface layers 209 and 212 are made of gold ( Au ) are formed on the second metal isolation layers 208 and 211, respectively.
  • the first metal isolation layer alternately adheres to the layer 207, the second metal isolation layer 208, and the metal surface layer 209 to form a P The electrode 205; the first metal isolation layer alternating adhesion layer 210, the second metal isolation layer 211 and the metal surface layer 212 constitute an N electrode 206.
  • P electrode 205 and N electrode 206 are respectively located on the surface of the first current spreading layer 204 and the exposed first limiting layer 201 On the surface, it is used to provide current injection for the epitaxial layer. Further, when the LED of the present embodiment has a vertical structure, the N electrode can be directly disposed on the back surface of the substrate, and the substrate is of a conductive type such as a Si piece or the like.
  • FIG. 3 it is a flowchart of a method for fabricating an LED according to an embodiment of the present invention.
  • step S11 is performed to provide a substrate 200 using metal organic chemical vapor deposition (MOCVD) on the substrate 201.
  • MOCVD metal organic chemical vapor deposition
  • the epitaxial layer is epitaxially grown on the surface.
  • the epitaxial layer includes a first confinement layer 201, a light-emitting layer 202, and a second confinement layer 203 which are laminated in this order from bottom to top.
  • a first current spreading layer 204 is formed on the light emitting epitaxial layer, and the material is selected from indium tin oxide (ITO), and the thickness is 2300 ⁇ ;
  • the first current spreading layer 204 Forming an alternating layer of the second current spreading layer and the first metal isolating layer thereon, wherein the second current spreading layer and the first metal isolating layer alternately layer 207 are composed of three structural layers, the first layer 207a It is composed of a second current spreading layer made of indium tin oxide (ITO), the same as the first current spreading layer 204, having a thickness of 600 ⁇ , a magnetron sputtering plating rate of 0.1 to 1 ⁇ /s, and a second layer 207d.
  • ITO indium tin oxide
  • the second current spreading layer and the first metal isolation layer are alternately formed, that is, the ITO second current spreading layer 207b is first plated with a thickness of 10 ⁇ , and the plating rate is 0.1-0.5 ⁇ /s by magnetron sputtering, and then 10 ⁇ is plated.
  • the thickness of the Cr first metal isolation layer 207c, the magnetron sputtering method plating rate is 0.1 ⁇ 0.5 ⁇ /s, so alternately 5 times, the number of layers is 10 layers;
  • the third layer 207e It consists of a first metal isolation layer with a chromium (Cr) thickness of 150 ⁇ and a magnetron sputtering rate of 0.1 to 1 ⁇ /s.
  • a second metal isolation layer is formed on the alternating layer of the second current spreading layer and the first metal isolation layer, and the material is platinum. Pt );
  • the material is selected from gold (Au);
  • step S16 is performed to perform an annealing heat treatment at a heat treatment temperature of 200 to 400. °C.
  • the thickness of the first metal isolation layer of the second layer is relatively thin, and the film distribution state is not completely continuous, and after the heat treatment annealing, the second current expansion layer of the second layer is easily grown laterally and longitudinally to form
  • the crystal body is interposed with a portion of the first metal isolation layer of the second layer, and is alternated several times such that the second current spreading layer of the second layer is interposed with the first metal isolation layer.
  • the first layer (second current spreading layer) is the same material as the first current spreading layer, that is, the adhesion is good.
  • the adhesion layer of the second current expansion layer and the first metal isolation layer thus formed has better adhesion to the first current expansion layer than to the pure metal isolation layer and the current expansion layer film, that is, the adhesion is enhanced.

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Abstract

提供一种具有交替附着层电极的发光二极管及其制作方法。其发光二极管，包括：衬底（200）；发光外延层（201，202，203），由半导体材料层堆叠而成，形成于衬底之上；第一电流扩展层（204），形成于发光外延层之上；第二电流扩展层（207a）与第一金属隔离层（207c）交替的附着层（207），形成于第一电流扩展层之上，由三大结构层组成；第二金属隔离层（208），形成于第二电流扩展层与金属隔离层交替沉积的附着层之上；金属电极层（209），形成于第二金属隔离层之上。

Description

发光二极管及其制作方法
本申请主张如下优先权：中国发明专利申请号201210443395.3 ，题为 ' 发光二极管及其制作方法 ' ，于 2012 年 11 月 8日 提交。 上述申请的全部内容通过引用结合在本申请中。
技术领域
本发明涉及发光二极管及其制作方法，更具体地是具有交替附着层电极的发光二极管及其制作方法。
背景技术
发光二极管（ LED ）经过多年的发展，已经广泛用于显示、指示、背光、照明等不同领域。 III-V 族化合物是当前主流的用于制作发光二极管的半导体材料，其中以氮化镓基材料和铝镓铟磷基材料最为普遍。传统的 P 型 III-V 族半导体材料的电流扩展性能一般较差，为了使电流能够均匀地注入发光层，需要在 p 型材料层上加一电流扩展层。在众多可作为电流扩展层（ TCL ）的材料中，诸如：氧化铟锡（ ITO ）、氧化镉锡（ CTO ）、氧化铟（ InO ）和氧化锌（ ZnO ）等，均可使用于提高电流分散效果，其中 ITO （ Indium Tin Oxide 氧化铟锡）是被最广泛应用的一种， ITO 薄膜即铟锡氧化物半导体透明导电膜，通常有两个性能指标：电阻率和透光率，由于 ITO 可同时具有低电阻率及高光穿透率的特性，符合了导电性及透光性良好的要求。与其它透明的半导体导电薄膜相比， ITO 具有良好的化学稳定性和热稳定性。对衬底具有良好的附着性和图形加工特性。
参见图 1 ，在常规正装发光二极管结构中，包括衬底 100 ，由下往上堆叠的第一限制层 101 、发光层 102 、第二限制层 103 、电流扩展层 104 、 P 电极 105 （包括第一金属隔离层 107 、第二金属隔离层 108 和金属表面层 109 ）以及设置在第一限制层 101 裸露表面上的 N 电极 106 （包括第一金属隔离层 110 、第二金属隔离层 111 和金属表面层 112 ）。但是，电流扩散层和 P 电极材料的粘附性较差，由于这一特点，容易导致电流扩散层与 P 电极材料之间出现膜层脱离现象，影响了发光二极管的可靠性，从而大大影响了产品的良率。
发明内容
为解决上述发光二极管的所存在的问题，本发明旨在提供一种具有交替附着层电极的发光二极管及其制作方法。
根据本发明的第一个方面，发光二极管，包括：衬底；发光外延层，由半导体材料层堆叠而成，形成于衬底之上；第一电流扩展层，形成于所述发光外延层之上；第二电流扩展层与第一金属隔离层交替的附着层，形成于第一电流扩展层之上；第二金属隔离层，形成于第二电流扩展层与金属隔离层交替沉积的附着层之上；金属电极层，形成于第二金属隔离层之上。
其中，所述第二电流扩展层与第一金属隔离层交替沉积的附着层由三大结构层组成，第一层由第二电流扩展层组成，第二层由第二电流扩展层与第一金属隔离层交替组成，第三层由第一金属隔离层组成。
进一步地，所述第一电流扩展层的厚度为 500~5000Å 。
进一步地，所述第一层的厚度为 100~800Å 。
进一步地，所述第二层的厚度为 50~200Å 。
进一步地，所述第三层的厚度为 100~500Å 。
进一步地，所述第二电流扩展层与第一金属隔离层交替的附着层通过磁控溅镀法形成。
进一步地，所述第二电流扩展层与第一金属隔离层交替的附着层的交替层数为 6~20 层。
进一步地，所述第一电流扩展层的材料选用氧化铟锡（ ITO ）或氧化锌（ ZnO ）或氧化镉锡（ CTO ）或氧化铟（ InO ）或铟（ In ）掺杂氧化锌（ ZnO ）或铝（ Al ）掺杂氧化锌（ ZnO ）或镓（ Ga ）掺杂氧化锌（ ZnO ）中的一种。
进一步地，所述第二电流扩展层的材料与第一电流扩展层的材料相同。
进一步地，所述第一金属隔离层为 Cr 、 Ti 、 Pt 、 Ni 、 W 中的一种金属。
进一步地，所述第二金属隔离层为 Cr 、 Ti 、 Pt 、 Ni 、 W 中的一种金属。
根据本发明的第二个方面，发光二极管的制作方法，包括步骤：提供一衬底，外延生长发光外延层，由半导体材料层堆叠而成；在发光外延层上形成第一电流扩展层；在所述第一电流扩展层上采用磁控溅镀法形成第二电流扩展层与第一金属隔离层交替的附着层；在所述第一金属隔离层上形成第二金属隔离层；在所述第二金属隔离层上形成金属电极层；最后，进行退火热处理。
进一步地，所述第二电流扩展层与第一金属隔离层交替的附着层由三大结构层组成，第一层由第二电流扩展层组成；第二层由第二电流扩展层与第一金属隔离层交替组成；第三层由第一金属隔离层组成。
进一步地，采用磁控溅镀法形成第一层，镀膜速率为 0.1~1Å/s ，所形成的第一层的厚度为 100~800Å 。
进一步地，采用磁控溅镀法形成第二层，镀膜速率为 0.1~0.5Å/s ，所形成的第二层的厚度为 50~200Å 。
进一步地，采用磁控溅镀法形成第三层，镀膜速率为 0.1~1Å/s ，所形成的第三层的厚度为 100~500Å 。
进一步地，退火热处理的温度为 200~400 ℃。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图 1 为常规正装的发光二极管芯片的结构示意图。
图 2 为根据本发明实施的具有交替附着层电极的发光二极管芯片的结构示意图。
图 3 为根据本发明实施的交替附着层电极的结构示意图。
图 4 为根据本发明实施的具有交替附着层电极的发光二极管芯片的流程示意图。
图中各标号表示：
100 ， 200 ：衬底； 101 ， 201 ：第一限制层； 102 ， 202 ：发光层； 103 ， 203 ：第二限制层； 104 ， 204 ：第一电流扩展层； 105 ， 205 ： P 电极； 106 ， 206 ： N 电极； 107 ， 110 ：第一金属隔离层； 108 ， 111 ， 208 ， 211 ：第二金属隔离层； 109 ， 112 ， 208 ， 211 ：金属表面层： 209 ， 212 ； 207 ， 210 ：第二电流扩展层与第一金属隔离层交替的附着层； 207a ：第一层； 207b ：第二层之第二电流扩展层； 207c ：第二层之第一金属隔离层； 207d ：第二层； 207e ：第三层。
具体实施方式
下面将结合示意图对本发明进行更详细的描述，其中表示了本发明的优选实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制。
本发明的核心思想在于，提供一种发光二极管及其制作方法，其结构包括衬底，发光外延层，第一电流扩展层，第二电流扩展层与第一金属隔离层交替的附着层，第二金属隔离层及金属电极层。
其中，所述附着层由三大结构层组成：第一层由第二电流扩展层组成，第二层由不完全连续的第二电流扩展层与第一金属隔离层交替组成，第三层由第一金属隔离层组成。可以采用磁控溅镀法形成附着层，易于控制镀率。溅射完成后，进行退火热处理。由于在退火热处理期间，原本呈不完全连续薄膜状的第二层中的第一金属隔离层厚度比较薄，而且有空隙，容易使得第二层中的第二电流扩展层横向和纵向地生长，形成结晶体，而中间又夹杂着部分第二层中的第一金属隔离层，如此交替数次，使得第二层之第二电流扩展层与第一金属隔离层夹杂在一起。而第一层（第二电流扩展层）与第一电流扩展层材料相同或相近，即附着性较好。如此形成的第二电流扩展层与第一金属隔离层交替的附着层，其与第一电流扩展层的附着性将比在纯金属隔离层与电流扩展层膜的附着性好，进而减少发光二极管掉电极的比例，增强发光二极管工作的可靠性。
结合上述核心思想，下面实施例公开了一种发光二极管及其制作方法，所述发光二极管包括：衬底；外延层，由半导体材料层堆叠而成，形成于衬底之上；第一电流扩展层，形成于所述发光外延层之上；第二电流扩展层与第一金属隔离层交替的附着层，形成于第一电流扩展层之上；第二金属隔离层，形成于第二电流扩展层与金属隔离层交替沉积的附着层之上；金属电极层，形成于第二金属隔离层之上。所述第二电流扩展层与第一金属隔离层交替沉积的附着层由三大结构层组成：第一层由第二电流扩展层组成，第二层由第二电流扩展层与第一金属隔离层交替组成，第三层由第一金属隔离层组成。
进一步，结合上述 LED 结构，如图 4 所示，下面实施例还提供了一种制造方法，包括以下步骤：
步骤 S11 ，提供一衬底，其在于外延生长发光外延层，其依次包括第一限制层、发光层、第二限制层；
步骤 S12 ，在发光外延层形成第一电流扩展层；
步骤 S13 ，在所述第一电流扩展层上形成第二电流扩展层与第一金属隔离层交替附着层；
步骤 S14 ，在所述第二电流扩展层与第一金属隔离层交替附着层上形成第二金属隔离层；
步骤 S15 ，在所述第二金属隔离层上形成金属电极层；
步骤 S16 ，进行退火热处理。
以下结合核心思想，详细说明本发明所述 LED 结构及其制作方法。
以下列举所述 LED 结构及其制作方法的实施例，以清楚说明本发明的内容，应当明确的是，本发明的内容并不限制于以下实施例，其他通过本领域普通技术人员的常规技术手段的改进亦在本发明的思想范围之内。
以下请参考图 2 ，其为本发明第一实施例的 LED 结构的结构截面图。
如图 2 所示，在本实施例中，衬底 200 可以从以下一组材料中选出，该组材料包括：蓝宝石衬底、碳化硅衬底、硅衬底、氮化镓衬底及氧化锌衬底，在较佳的实施例中，衬底 200 选取蓝宝石衬底。
外延层沉积在衬底 200 上，外延层的材料可以包括氮化镓基材料、磷化镓基材料、镓氮磷基材料或氧化锌基材料。在本实施例中，外延层为氮化镓基材料，外延层包括自下至上依次层叠设置的第一限制层 201 、发光层 202 和第二限制层 203 ，其中，第一限制层 201 为 N 型氮化镓（ GaN ）层结构，发光层 202 为氮化铝镓（ AlGaN ）多量子阱有源层，第二限制层 203 为 P 型 AlGaN 层。本实施例中的外延层结构并不限于缓冲层 -N 型 GaN 层结构 -AlGaN 多量子阱有源层 -P 型 AlGaN 层，其它可以激发出光的外延层结构，如 N 型 GaN 层 - （ InGaN ） /GaN 多量子阱有源层 -P 型 GaN 层也在本发明的思想范围内。第一电流扩展层 204 ，形成于第二限制层 203 之上，第一电流扩展层 204 的材料可以选自氧化铟锡（ ITO ）或氧化锌（ ZnO ）或氧化镉锡（ CTO ）或氧化铟（ InO ）或铟（ In ）掺杂氧化锌（ ZnO ）或铝（ Al ）掺杂氧化锌（ ZnO ）或镓（ Ga ）掺杂氧化锌（ ZnO ）中的一种，本实施例中选用氧化铟锡（ ITO ），厚度为 2300Å 。
第二电流扩展层与第一金属隔离层交替的附着层 207 设置在第一电流扩展层 204 之上，第二电流扩展层与第一金属隔离层交替的附着层 210 设置在裸露的第一限制层 201 之上。
如图 3 所示，第二电流扩展层与第一金属隔离层交替的附着层 207 由三大结构层组成（ 210 与 207 材料和厚度均一样，图中未示出具体三大结构层），第一层 207a 由第二电流扩展层组成，材料为氧化铟锡（ ITO ），与第一电流扩展层 204 相同，厚度为 300Å ，磁控溅射法镀率为 0.1~1Å/s ；第二层 207d 由第二电流扩展层与第一金属隔离层交替组成，即先镀 10Å 厚度的 ITO 第二电流扩展层 207b ，磁控溅射法镀率为 0.1~0.5 Å/s ，再镀 10Å 厚度的 Cr 第一金属隔离层 207c ，磁控溅射法镀率为 0.1~0.5 Å/s ，如此交替 5 次，层数共为 10 层；第三层 207e 由第一金属隔离层组成，材料选铬（ Cr ），厚度为 300Å ，磁控溅射法镀率为 0.1~1 Å/s 。
第二金属隔离层 208 和 211 ，材料选用铂（ Pt ），分别形成于第二电流扩展层与第一金属隔离层交替的附着层 207 和 210 之上；金属表面层 209 和 212 ，材料选用金（ Au ），分别形成于第二金属隔离层 208 和 211 之上。如此，第一金属隔离层交替的附着层 207 、第二金属隔离层 208 和金属表面层 209 ，构成 P 电极 205 ；第一金属隔离层交替的附着层 210 、第二金属隔离层 211 和金属表面层 212 ，构成 N 电极 206 。
P 电极 205 和 N 电极 206 分别位于第一电流扩展层 204 表面和露出的第一限制层 201 表面上，用于为外延层提供电流注入。另外，当本实施例的 LED 为垂直结构时， N 电极可直接设置在衬底的背面，此时衬底为导电型的，如 Si 片等。
以下说明本实施例 LED 的制备方法。参考图 3 ，其为本发明实施例的 LED 制作方法的流程图。
首先进行步骤 S11 ，提供衬底 200 ，采用金属有机化合物化学气相沉淀（ MOCVD ）在衬底 201 的表面上外延生长发光外延层。外延层包括自下至上依次层叠设置的第一限制层 201 、发光层 202 和第二限制层 203 。
再进行步骤 S12 ，在发光外延层形成第一电流扩展层 204 ，材料选用氧化铟锡（ ITO ），厚度为 2300Å ；
接着进行步骤 S13 ，在所述第一电流扩展层 204 上形成第二电流扩展层与第一金属隔离层交替附着层，其中第二电流扩展层与第一金属隔离层交替的附着层 207 由三大结构层组成，第一层 207a 由第二电流扩展层组成，材料为氧化铟锡（ ITO ），与第一电流扩展层 204 相同，厚度为 600Å ，磁控溅射法镀率为 0.1~1Å/s ；第二层 207d 由第二电流扩展层与第一金属隔离层交替组成，即先镀 10Å 厚度的 ITO 第二电流扩展层 207b ，磁控溅射法镀率为 0.1~0.5 Å/s ，再镀 10Å 厚度的 Cr 第一金属隔离层 207c ，磁控溅射法镀率为 0.1~0.5 Å/s ，如此交替 5 次，层数共为 10 层；第三层 207e 由第一金属隔离层组成，材料选铬（ Cr ），厚度为 150Å ，磁控溅射法镀率为 0.1~1 Å/s 。
接着进行步骤 S14 ，在所述第二电流扩展层与第一金属隔离层交替附着层上形成第二金属隔离层，材料选用铂（ Pt ）；
然后进行步骤 S15 ，在所述第二金属隔离层上形成金属电极层，材料选用金（ Au ）；
最后进行步骤 S16 ，进行退火热处理，热处理温度为 200~400 ℃。由于热处理前，第二层之第一金属隔离层厚度比较薄，呈不完全连续的薄膜分布状态，而经过热处理退火后，容易使得第二层之第二电流扩展层横向和纵向地生长，形成结晶体，而中间又夹杂着部分第二层之第一金属隔离层，如此交替数次，使得第二层之第二电流扩展层与第一金属隔离层夹杂在一起。而第一层（第二电流扩展层）与第一电流扩展层材料相同，即附着性较好。如此形成的第二电流扩展层与第一金属隔离层交替的附着层，其与第一电流扩展层的附着性将比在纯金属隔离层与电流扩展层膜的附着性好，即增强了 P 电极与电流扩展层之间的粘附性，进而减少发光二极管掉电极的比例，增强发光二极管工作的可靠性。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (15)

  1. 发光二极管，包括：衬底；发光外延层，由半导体材料层堆叠而成，形成于衬底之上；第一电流扩展层，形成于所述发光外延层之上；第二电流扩展层与第一金属隔离层交替的附着层，形成于第一电流扩展层之上；第二金属隔离层，形成于第二电流扩展层与金属隔离层交替沉积的附着层之上；金属电极层，形成于第二金属隔离层之上。
  2. 根据权利要求 1 所述的发光二极管，其特征在于：所述第二电流扩展层与第一金属隔离层交替沉积的附着层由三大结构层组成，第一层由第二电流扩展层组成，第二层由第二电流扩展层与第一金属隔离层交替组成，第三层由第一金属隔离层组成。
  3. 根据权利要求 1 所述的发光二极管，其特征在于：所述第一电流扩展层的厚度为 500~5000Å 。
  4. 根据权利要求 2 所述的发光二极管，其特征在于：所述第一层的厚度为 100~800Å 。
  5. 根据权利要求 2 所述的发光二极管，其特征在于：所述第二层的厚度为 50~200Å 。
  6. 根据权利要求 2 所述的发光二极管，其特征在于：所述第三层的厚度为 100~500Å 。
  7. 根据权利要求 1 所述的发光二极管，其特征在于：所述第二电流扩展层与第一金属隔离层交替的附着层的交替层数为 6~50 层。
  8. 根据权利要求 1 所述的发光二极管，其特征在于：所述第二电流扩展层的材料与第一电流扩展层的材料相同。
  9. 发光二极管的制作方法，包括：
    提供一衬底，外延生长发光外延层，由半导体材料层堆叠而成；
    在发光外延层上形成第一电流扩展层；
    在所述第一电流扩展层上形成第二电流扩展层与第一金属隔离层交替的附着层；
    在所述第一金属隔离层上形成第二金属隔离层；
    在所述第二金属隔离层上形成金属电极层；
    进行退火热处理。
  10. 根据权利要求 9 所述的发光二极管的制作方法，其特征在于：所述第二电流扩展层与第一金属隔离层交替沉积的附着层由三大结构层组成，第一层由第二电流扩展层组成，第二层由第二电流扩展层与第一金属隔离层交替组成，第三层由第一金属隔离层组成。
  11. 根据权利要求 10 所述的发光二极管的制作方法，其特征在于：采用磁控溅镀法形成所述附着层。
  12. 根据权利要求 11 所述的发光二极管的制作方法，其特征在于：所述第一层的镀膜速率为 0.1~1Å/s ，厚度为 100~800Å 。
  13. 根据权利要求 13 所述的发光二极管的制作方法，其特征在于：所述第二层的镀膜速率为 0.1~0.5Å/s ，厚度为 50~200Å 。
  14. 根据权利要求 13 所述的发光二极管的制作方法，其特征在于：所述第三层的镀膜速率为 0.1~1Å/s ，厚度为 100~500Å 。
  15. 根据权利要求 13 所述的发光二极管的制作方法，其特征在于：退火热处理的温度为 200~400 ℃。
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