WO2014065162A1 - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
WO2014065162A1
WO2014065162A1 PCT/JP2013/077988 JP2013077988W WO2014065162A1 WO 2014065162 A1 WO2014065162 A1 WO 2014065162A1 JP 2013077988 W JP2013077988 W JP 2013077988W WO 2014065162 A1 WO2014065162 A1 WO 2014065162A1
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Prior art keywords
led chip
light
film
emitting device
metal film
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PCT/JP2013/077988
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French (fr)
Japanese (ja)
Inventor
猛 宮下
昌之 礒谷
慎 宮坂
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シーシーエス株式会社
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Publication of WO2014065162A1 publication Critical patent/WO2014065162A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations

Definitions

  • the present invention relates to a light emitting device including a substrate, a metal film formed on the surface of the substrate, and an LED chip provided on the metal film.
  • a metal film that reflects light is formed on a substrate, an LED chip is placed on the metal film, and light emitted from the LED chip is emitted, for example, toward the substrate side.
  • a device in which light is returned to a desired light irradiation side is known.
  • a light emitting device 100A shown in FIG. 6A has been proposed.
  • This light emitting device 100A has a gas barrier property in order to prevent contact between the outside air and the metal film 2A.
  • the metal film 2A is covered with a glass film 3A, and an LED chip 4A is placed on the glass film 3A (see Patent Document 1).
  • symbol 6A is a translucent resin layer, and the refractive index is usually lower than 3A of glass films.
  • the LED chip 4A when the LED chip 4A is placed on the glass film 3A as in the light emitting device 100A, the light emitted from the LED chip 4A toward the metal film 2A enters the glass film 3A, and the incident light Most of the light is repeatedly reflected in the glass film 3A due to the refractive index relationship between the glass film 3A and the translucent resin layer 6A and cannot be extracted to the light exit side. That is, although the light emitting device 100A can prevent the secular change of the metal film 2A, there is a problem that the light extraction efficiency is lowered because the light taken into the glass film 3A exists. In addition, since the LED chip 4A is placed on the glass film 3A that is not as good in heat conductivity as metal, the heat generated in the LED chip 4A is not dissipated to the substrate 1A side, and desired performance is obtained. Hateful.
  • a light-emitting device 100B shown in FIG. 6B has also been proposed.
  • an LED chip 4B is placed on the metal film 2B, and both the metal film 2B and the LED chip 4B are glass films.
  • the metal film 2B is covered with 3B to prevent secular change (see Patent Document 2).
  • symbol 6B is a translucent resin layer like the above, The refractive index is lower than the glass film 3B.
  • the thermal expansion coefficients of the metal film 2B and the glass film 3B are different and the amount of thermal deformation is different. Thermal stress will be applied to 4B. And when such a thermal stress is applied, the LED chip 4B is cracked and its light emission characteristics are changed.
  • the present invention is to solve the above-described problems all at once.
  • the amount of light emitted from the LED chip is taken into the coating film while preventing the metal film from being oxidized or sulfided by the coating film.
  • a light-emitting device that can improve the light extraction efficiency by reducing the heat dissipation of the LED chip by the coating film and prevent the characteristics of the LED chip from deteriorating due to thermal deformation of each component. For the purpose.
  • a light emitting device of the present invention includes a substrate, a metal film formed on the surface of the substrate, an LED chip provided on the metal film, and a coating film formed on the metal film,
  • the coating film is formed with a through-hole penetrating in the film thickness direction and having the LED chip disposed therein, and the through-hole is formed larger than the LED chip in plan view.
  • a gap is formed between the outer peripheral surface of the through hole and the inner peripheral surface of the through hole.
  • examples of the metal film include those capable of reflecting light
  • examples of the coating film include those having translucency and gas barrier properties. If this is the case, a gap is formed between the outer peripheral surface of the LED chip and the inner peripheral surface of the through hole, and there is no coating film in the vicinity of the LED chip. Most of the light emitted to the surface is reflected by the metal film without entering the coating film. For this reason, the proportion of light incident on the coating film can be reduced, and light is not confined in the coating film.
  • the amount of light taken into the coating film can be reduced and the light extraction efficiency can be increased while the metal film is covered with the coating film to prevent aging of the metal film.
  • the LED chip is directly disposed on the metal film, heat generated in the LED chip is efficiently radiated to the substrate side through the metal film. Accordingly, it is possible to prevent the performance of the LED chip from deteriorating due to the temperature rise of the LED chip.
  • the LED chip and the coating film do not come into contact with each other due to the gap between the LED chip and the through hole, the LED chip is only affected by the thermal deformation of the metal film. For this reason, a plurality of members having different thermal deformation amounts are not in contact with the LED chip, and excessive thermal stress is not applied to the LED chip. Therefore, it is possible to prevent the LED chip from being cracked and changing the light emission characteristics.
  • the gas barrier property is high, and the coating film may be a glass film so that the coating film can suitably prevent oxidation and sulfidation of the metal film.
  • the refractive index of the coating film It is sufficient to adopt a material having a refractive index larger than that of the translucent resin layer.
  • the size of the gap can be determined from the viewpoint of reducing the light incident on the coating film and preventing the oxidation and sulfidation of the metal film. Although not limited to this, it is 5 micrometers or more and 500 micrometers or less, for example. If the gap is less than 5 ⁇ m, the ratio of the light incident upon and taken in the coating film cannot be reduced so much. On the other hand, if the gap exceeds 500 ⁇ m, the metal film is not sufficiently prevented from being oxidized or sulfided. However, even if the gap is 5 ⁇ m or more, the LED chip may interfere with the coating film and may be difficult to mount. Therefore, the gap is more preferably 50 ⁇ m or more.
  • the gap is formed between the outer peripheral surface of the LED chip disposed in the through hole of the coating film and the inner peripheral surface of the through hole.
  • the emitted light can be made difficult to be taken into the coating film, and the reduction of the light extraction efficiency by the coating film can be prevented.
  • the LED chip since the LED chip is directly mounted on the metal film, the LED chip can be efficiently radiated, and the performance is not easily lowered due to the temperature rise of the LED chip.
  • the LED chip is only affected by the thermal deformation of the metal film due to the gap, and problems due to thermal stress such as cracking of the LED chip due to the difference in the amount of thermal deformation of the member in contact with the LED chip hardly occur.
  • the metal film is covered with the coating film except for the place where the LED chip is installed, the metal film can be prevented from being discolored due to oxidation or sulfuration, and the discoloration reduces the reflectance. Light extraction efficiency is unlikely to decrease.
  • FIG. 1 is a schematic top view of a light emitting device according to an embodiment of the present invention.
  • FIG. 3 is a schematic cross-sectional view of the light emitting device according to the embodiment.
  • FIG. 6 is a schematic cross-sectional view illustrating a configuration of a conventional light emitting device.
  • FIG. 1 is a plan view of the light emitting device 100 of the present embodiment
  • FIG. 2 is a cross-sectional view taken along line AA of FIG. Note that the dimensions in the thickness direction in FIG. 2 are made different from the actual ratio for the sake of easy understanding.
  • the light emitting device 100 of the present embodiment includes a substrate 1, a metal film 2 formed on the surface of the substrate 1, an LED chip 4 provided on the metal film 2, and the metal A glass film (coating film) 3 formed so as to cover substantially the entire area of the film 2 and a translucent resin layer 6 provided so as to cover the glass film 3 and the LED chip 4 are provided.
  • the light emitting device 100 of this embodiment is characterized in that the glass film 3 is not provided on the LED chip 4 and around the LED chip 4.
  • the substrate 1 is formed of, for example, ceramic, and the face plate portion has a substantially square shape as shown in FIG.
  • a cavity 11 as a recess is formed at the center of the surface of the substrate 1, and an anode 52 and a cathode 51 connected to each LED chip 4 by wiring are provided at the bottom.
  • the metal film 2 is a silver (Ag) film formed so as to cover the surface of the cavity 11, reflects the light emitted from the LED chip 4 toward the substrate 1, and emits light on the light irradiation side. It is for returning. As shown in FIG. 2, the metal film 2 is formed so as to cover all of the side surfaces and the bottom surface of the cavity 11.
  • the metal film 2 is made of silver, but the light emitted from the LED chip 4 such as copper, aluminum, gold, tungsten, iron, nickel, or other metals or various alloys is also effective. Any material may be used as long as it has a material characteristic of reflective reflection.
  • the glass film 3 is made of glass having a refractive index larger than that of the translucent resin layer 6 and has translucency and gas barrier properties.
  • the metal film 2 is oxidized or sulfided in contact with the outside air. Is prevented.
  • the said glass film 3 is formed in the bottom face of the said cavity 11 so that it may have the through-hole 31 in the part in which the said LED chip 4 is mounted. Electrode exposure holes are also formed in the installed portions of the anode 52 and the cathode 51.
  • the through hole 31 is formed larger than the LED chip 4 in a plan view, and the LED chip 4 is disposed at the approximate center thereof. For this reason, the through hole 31 and the LED chip 4 are separated by a predetermined distance, and a gap is formed between the inner peripheral surface of the through hole 31 and the outer peripheral surface of the LED chip 4 so that they do not come into contact with each other. Yes. Therefore, the LED chip 4 and the surrounding metal film 2 are exposed in the portion of the through hole 31. The gap portion is filled with the translucent resin layer 6.
  • the size of the gap can be, for example, 5 ⁇ m or more and 500 ⁇ m or less. If the gap is small, the ratio of the light incident upon the glass film 3 and taken in cannot be reduced so much. On the other hand, if the gap is large, the metal film 2 is not sufficiently prevented from being oxidized or sulfided. Therefore, if the gap has a size of 5 ⁇ m or more and 500 ⁇ m or less, the ratio of light incident on the glass film 3 can be reduced to increase the light extraction efficiency, and the metal film 2 can be sufficiently prevented from being oxidized or sulfided. You can also However, even if the gap is 5 ⁇ m or more, the LED chip 4 may interfere with the glass film 3 and may be difficult to mount, and therefore the gap is preferably 50 ⁇ m or more.
  • the through hole 31 and the electrode exposure hole are, for example, a portion where the LED chip 4 is mounted and a portion where the anode 52 and the cathode 51 are disposed after first glass coating is performed over the entire area on the metal film 2. It can be formed by removing glass by etching or the like.
  • the glass film 3 covers the metal film 2 except for the periphery of the LED chip 4 to prevent contact with the outside air, the metal film 2 is unlikely to be discolored due to oxidation or sulfidation, and the LED chip.
  • the light extraction efficiency from 4 is unlikely to decrease. That is, the light emitting device 100 of the present embodiment hardly changes with time, and can maintain a predetermined performance for a long time.
  • the glass chip 3 is injected from the LED chip 4 to the substrate 1 side as will be described later. Light is not easily taken into the glass film 3.
  • the glass film 3 can improve the light extraction efficiency as compared with the prior art while preventing the metal film 2 from changing with time.
  • the LED chip 4 is only affected by the thermal deformation of the metal film 2 due to the gap, and the above-described problem does not occur. Furthermore, since the LED chip 4 is mounted directly on the metal film 2, heat can be efficiently radiated to the substrate 1 side via the metal film 2. From these things, it can also prevent that the light emission characteristic of LED chip 4 changes with a heat
  • the LED chip 4 is covered with a translucent resin layer 6 and the translucent resin layer 6 is filled in the gap.
  • the translucent resin layer 6 is made of glass and Since the LED chip 4 is not easily subjected to thermal stress by the translucent resin layer 6, it is very little even if applied. Therefore, thermal stress is applied to the LED chip 4 by the translucent resin layer 6, and there is no problem as in the case of glass.
  • the LED chip 4 is disposed in the through hole 31 and that the glass film 3 and the LED chip 4 are separated from each other, thereby improving the light extraction efficiency.
  • FIG. 3 shows a simulation result of the locus of light emitted from the LED chip 4A to the substrate 1A side in the conventional light emitting device 100A shown in FIG. 6 (a).
  • FIG. 4 shows a simulation result of the trajectory of light emitted from the LED chip 4 to the substrate 1 side in the light emitting device 100 of the present embodiment.
  • the LED chip 4 ⁇ / b> C is disposed in the through hole of the glass film 3 ⁇ / b> C, and when the inner peripheral surface of the through hole and the outer peripheral surface of the LED chip 4 ⁇ / b> C are in contact with each other,
  • emitted to the is shown.
  • the refractive indexes of the glass films 3A, 3, 3C, the translucent resin layers 6A, 6, 6C, and the LED chips 4A, 4, 4C are 1.5, 1.4, and 1. 7 was set.
  • the light emitted from the LED chip 4A toward the substrate 1A enters the glass film 3A and enters the glass film 3A.
  • the refractive indexes of the glass film 3A and the translucent resin layer 6A From the relationship between the refractive indexes of the glass film 3A and the translucent resin layer 6A, it can be seen that most of the light is repeatedly reflected in the glass film 3A and cannot be extracted to the light irradiation side. That is, conventionally, the amount of light taken into the glass film 3A is lost, and the light extraction efficiency is reduced.
  • the LED chip 4 is disposed on the side of the substrate 1 as shown in FIG.
  • the light emitted into the glass is reflected by the metal film 2 toward the light irradiation side, so that only a small amount of light enters the glass film 3. Therefore, it can be seen from the relationship between the refractive indexes of the glass film 3 and the translucent resin layer 6 that there is little light that repeats reflection in the glass film 3 and there is almost no light taken into the glass film 3. That is, with the light emitting device 100 according to the present embodiment, the light itself that enters the glass film 3 can be reduced, so that the amount of light that repeatedly reflects in the glass film 3 is naturally reduced, and the light is extracted. Efficiency can be improved.
  • the glass film 3C and the LED chip 4C are in contact with each other without forming a gap between the inner peripheral surface of the through hole and the outer peripheral surface of the LED chip 4C (light emitting device 100C). 5) As shown in FIG. 5, part of the light emitted near the periphery of the LED chip 4C enters the glass film 3C as in the light emitting device 100A, and most of the incident light is made of glass. From the relationship between the refractive indexes of the film 3C and the translucent resin layer 6C, it can be seen that reflection is repeated in the glass film 3C. Therefore, even when a gap is not provided between the inner peripheral surface of the through hole and the outer peripheral surface of the LED chip 4C, light loss due to the glass film 3C occurs, and the light extraction efficiency decreases.
  • the amount of light taken into the glass film 3 only by forming a gap between the inner peripheral surface of the through hole 31 and the outer peripheral surface of the LED chip 4 as in the light emitting device 100 of the present embodiment can be seen that even when the glass film 3 is provided, the light extraction efficiency can be improved.
  • the glass film is the coating film, but other members having gas barrier properties may be the coating film. Further, any glass composition may be used as long as cracks and the like are not easily generated. In short, any material can be used as long as it can prevent the outside air from coming into contact with the metal film for a long period of time and has a light-transmitting property.
  • the shape of the LED chip, the wavelength of the emitted light, and the like are not particularly limited, and the present invention can be configured by various LED chips. Furthermore, instead of arranging one LED chip in the cavity as in the above embodiment, a plurality of LED chips may be arranged.
  • the metal film has a property of reflecting light
  • the coating film has a light-transmitting property and a gas barrier property.
  • the present invention is not necessarily limited to this. Those having no special properties may be used for the metal film or the coating film.
  • the present invention can be used as a light-emitting device with little change with time and high light extraction efficiency.

Abstract

In order to provide a light-emitting device that is able to reduce the amount of light captured inside a coating film and improve the efficiency with which light emitted from a LED chip is extracted even when a coating film is provided for preventing oxidation or sulfuration of a metallic film, the light-emitting device is provided with a substrate (1), a metallic film (2) formed on the surface of the substrate (1), a LED chip (4) provided on the metallic film (2), and a coating film (3) formed on the metallic film. The coating film (3) has formed therein a through-hole (31) that penetrates in the thickness direction of the film and has the LED chip (4) disposed therein. As viewed from above, the through-hole (31) is formed larger than the LED chip (4), a gap being formed between the external peripheral surface of the LED chip (4) and the internal peripheral surface of the through-hole.

Description

発光装置Light emitting device
　本発明は、基板と、基板の表面上に形成される金属膜と、金属膜上に設けられるＬＥＤチップとを備えた発光装置に関するものである。 The present invention relates to a light emitting device including a substrate, a metal film formed on the surface of the substrate, and an LED chip provided on the metal film.
　従来から、発光装置として、光を反射する金属膜を基板上に形成してその金属膜上にＬＥＤチップを載置し、ＬＥＤチップから射出された光のうち、例えば基板側へと射出された光を所望の光照射側へと戻すようにしたものが知られている。 Conventionally, as a light emitting device, a metal film that reflects light is formed on a substrate, an LED chip is placed on the metal film, and light emitted from the LED chip is emitted, for example, toward the substrate side. A device in which light is returned to a desired light irradiation side is known.
　ところが、このような発光装置では、金属膜が外気に接触すると、その酸化や硫化が進行して黒変するため、この金属膜の反射率が低下して、ＬＥＤチップから射出された光が光照射側へと反射されにくくなり、光の取り出し効率が低下するという問題があった。 However, in such a light-emitting device, when the metal film comes into contact with the outside air, the oxidation or sulfurization proceeds and the black color changes, so that the reflectivity of the metal film decreases and the light emitted from the LED chip is light. There is a problem that the light is not easily reflected to the irradiation side and the light extraction efficiency is lowered.
　そこで、このような問題を解決するため、図６（ａ）に示す発光装置１００Ａが提案されており、この発光装置１００Ａでは、外気と金属膜２Ａとの接触を防止するため、ガスバリア性のあるガラス膜３Ａによって前記金属膜２Ａを覆い、このガラス膜３Ａの上にＬＥＤチップ４Ａを載置するようにしている（特許文献１参照）。尚、符号６Ａは、透光性樹脂層であり、通常、その屈折率はガラス膜３Ａよりも低い。 Therefore, in order to solve such a problem, a light emitting device 100A shown in FIG. 6A has been proposed. This light emitting device 100A has a gas barrier property in order to prevent contact between the outside air and the metal film 2A. The metal film 2A is covered with a glass film 3A, and an LED chip 4A is placed on the glass film 3A (see Patent Document 1). In addition, the code | symbol 6A is a translucent resin layer, and the refractive index is usually lower than 3A of glass films.
　しかしながら、この発光装置１００Ａのようにガラス膜３Ａの上にＬＥＤチップ４Ａを載置したのでは、ＬＥＤチップ４Ａから金属膜２Ａ側へと射出された光がガラス膜３Ａに入射し、入射した光の大部分はガラス膜３Ａと透光性樹脂層６Ａとの屈折率の関係によりガラス膜３Ａ内で反射を繰り返して光射出側へと取り出せなくなる。つまり、前記発光装置１００Ａには、金属膜２Ａの経年変化を防ぐことができるものの、ガラス膜３Ａ内に取り込まれる光が存在するために光の取り出し効率が低下するという問題がある。加えて、熱伝導性が金属ほどはよくないガラス膜３Ａ上にＬＥＤチップ４Ａが載置されているため、ＬＥＤチップ４Ａで生じた熱が基板１Ａ側に放熱されず、所望の性能が得られにくい。 However, when the LED chip 4A is placed on the glass film 3A as in the light emitting device 100A, the light emitted from the LED chip 4A toward the metal film 2A enters the glass film 3A, and the incident light Most of the light is repeatedly reflected in the glass film 3A due to the refractive index relationship between the glass film 3A and the translucent resin layer 6A and cannot be extracted to the light exit side. That is, although the light emitting device 100A can prevent the secular change of the metal film 2A, there is a problem that the light extraction efficiency is lowered because the light taken into the glass film 3A exists. In addition, since the LED chip 4A is placed on the glass film 3A that is not as good in heat conductivity as metal, the heat generated in the LED chip 4A is not dissipated to the substrate 1A side, and desired performance is obtained. Hateful.
　この他、図６（ｂ）に示す発光装置１００Ｂも提案されており、この発光装置１００Ｂでは、金属膜２Ｂ上にＬＥＤチップ４Ｂを載置し、金属膜２ＢとＬＥＤチップ４Ｂの両方をガラス膜３Ｂによって覆い、金属膜２Ｂの経年変化を防ぐようにしている（特許文献２参照）。尚、符号６Ｂは、上記と同様、透光性樹脂層であり、その屈折率はガラス膜３Ｂより低くなっている。 In addition, a light-emitting device 100B shown in FIG. 6B has also been proposed. In this light-emitting device 100B, an LED chip 4B is placed on the metal film 2B, and both the metal film 2B and the LED chip 4B are glass films. The metal film 2B is covered with 3B to prevent secular change (see Patent Document 2). In addition, the code | symbol 6B is a translucent resin layer like the above, The refractive index is lower than the glass film 3B.
　しかしながら、前記発光装置１００Ｂのように金属膜２Ｂ及びＬＥＤチップ４Ｂをガラス膜３Ｂで覆ったのでは、金属膜２Ｂとガラス膜３Ｂの熱膨張率が異なってその熱変形量が異なるため、ＬＥＤチップ４Ｂに熱応力がかかることとなる。そして、このような熱応力がかかることで、ＬＥＤチップ４Ｂに割れが生じ、その発光特性が変化する。 However, when the metal film 2B and the LED chip 4B are covered with the glass film 3B as in the light emitting device 100B, the thermal expansion coefficients of the metal film 2B and the glass film 3B are different and the amount of thermal deformation is different. Thermal stress will be applied to 4B. And when such a thermal stress is applied, the LED chip 4B is cracked and its light emission characteristics are changed.
特開２０１０－３４４８７号公報JP 2010-34487 A 特開２００９－３３１０７号公報JP 2009-33107 A
　本発明は上述したような問題を一挙に解決するためのものであり、コーティング膜により金属膜の酸化や硫化等を防ぎつつ、ＬＥＤチップから射出された光がこのコーティング膜内に取り込まれる量を低減して光の取り出し効率を向上させることができるとともに、コーティング膜によりＬＥＤチップの放熱が妨げられることや各構成部材の熱変形によりＬＥＤチップの特性が低下するのを防止できる発光装置を提供することを目的とする。 The present invention is to solve the above-described problems all at once. The amount of light emitted from the LED chip is taken into the coating film while preventing the metal film from being oxidized or sulfided by the coating film. Provided is a light-emitting device that can improve the light extraction efficiency by reducing the heat dissipation of the LED chip by the coating film and prevent the characteristics of the LED chip from deteriorating due to thermal deformation of each component. For the purpose.
　すなわち、本発明の発光装置は、基板と、基板の表面上に形成された金属膜と、前記金属膜上に設けられるＬＥＤチップと、前記金属膜上に形成されたコーティング膜とを備え、前記コーティング膜には、その膜厚方向に貫通し、内部に前記ＬＥＤチップが配置される貫通孔が形成されており、平面視において前記貫通孔は、前記ＬＥＤチップよりも大きく形成され、前記ＬＥＤチップの外周面及び前記貫通孔の内周面の間に隙間が形成されていることを特徴とする。 That is, a light emitting device of the present invention includes a substrate, a metal film formed on the surface of the substrate, an LED chip provided on the metal film, and a coating film formed on the metal film, The coating film is formed with a through-hole penetrating in the film thickness direction and having the LED chip disposed therein, and the through-hole is formed larger than the LED chip in plan view. A gap is formed between the outer peripheral surface of the through hole and the inner peripheral surface of the through hole.
　尚、前記金属膜としては、例えば、光を反射可能なものを挙げることができ、前記コーティング膜としては、例えば、透光性とガスバリア性を有するものを挙げることができる。このようなものであれば、前記ＬＥＤチップの外周面と前記貫通孔の内周面の間に隙間が形成され、ＬＥＤチップの周囲近傍にはコーティング膜が存在しないので、ＬＥＤチップから金属膜側へと射出された光の大部分は、コーティング膜に入射することなく、金属膜で反射される。このため、コーティング膜に入射する光の割合を低減することができるうえ、当該コーティング膜内に光が閉じ込められることもない。 In addition, examples of the metal film include those capable of reflecting light, and examples of the coating film include those having translucency and gas barrier properties. If this is the case, a gap is formed between the outer peripheral surface of the LED chip and the inner peripheral surface of the through hole, and there is no coating film in the vicinity of the LED chip. Most of the light emitted to the surface is reflected by the metal film without entering the coating film. For this reason, the proportion of light incident on the coating film can be reduced, and light is not confined in the coating film.
　従って、金属膜をコーティング膜で覆って金属膜の経年変化を防止しつつ、コーティング膜内に取り込まれる光の量を減らし、光の取り出し効率を高めることができる。 Therefore, the amount of light taken into the coating film can be reduced and the light extraction efficiency can be increased while the metal film is covered with the coating film to prevent aging of the metal film.
　また、前記ＬＥＤチップが前記金属膜上に直接配置されているので、ＬＥＤチップで生じた熱は金属膜を介して基板側に効率的に放熱される。従って、ＬＥＤチップの温度上昇により、ＬＥＤチップの性能が低下するのを防ぐことができる。 In addition, since the LED chip is directly disposed on the metal film, heat generated in the LED chip is efficiently radiated to the substrate side through the metal film. Accordingly, it is possible to prevent the performance of the LED chip from deteriorating due to the temperature rise of the LED chip.
　また、ＬＥＤチップと貫通孔との間の隙間によってＬＥＤチップとコーティング膜とが接触しないので、ＬＥＤチップは金属膜の熱変形の影響のみを受ける。このため、ＬＥＤチップに熱変形量の異なる部材が複数接触することがなく、ＬＥＤチップに過度な熱応力がかからないので、ＬＥＤチップにひび割れが生じ、発光特性が変化するのを防ぐことができる。 In addition, since the LED chip and the coating film do not come into contact with each other due to the gap between the LED chip and the through hole, the LED chip is only affected by the thermal deformation of the metal film. For this reason, a plurality of members having different thermal deformation amounts are not in contact with the LED chip, and excessive thermal stress is not applied to the LED chip. Therefore, it is possible to prevent the LED chip from being cracked and changing the light emission characteristics.
　ガスバリア性が高く、前記コーティング膜により前記金属膜の酸化や硫化を好適に防ぐことができるようにするには、前記コーティング膜が、ガラス膜であればよい。 The gas barrier property is high, and the coating film may be a glass film so that the coating film can suitably prevent oxidation and sulfidation of the metal film.
　前記ＬＥＤチップを保護するには、前記コーティング膜及び前記ＬＥＤチップ上を覆う透光性樹脂層をさらに備えたものであればよい。 In order to protect the LED chip, it is only necessary to further include a translucent resin layer covering the coating film and the LED chip.
　前記透光性樹脂層を設けた場合において、ＬＥＤチップから射出された光をコーティング膜内に取り込まれにくくし、光の取り出し効率を低下させないようにするには、例えば、前記コーティング膜の屈折率を、前記透光性樹脂層の屈折率よりも大きいものを採用すればよい。 In order to prevent the light emitted from the LED chip from being taken into the coating film and prevent the light extraction efficiency from being lowered when the translucent resin layer is provided, for example, the refractive index of the coating film It is sufficient to adopt a material having a refractive index larger than that of the translucent resin layer.
　尚、前記隙間の大きさは、コーティング膜に入射する光の低減と、金属膜の酸化や硫化の防止との観点から決定することができ、この両者をバランスよく両立させる大きさとしては、必ずしもこれに限定されるわけではないが、例えば、５μｍ以上５００μｍ以下である。隙間が５μｍ未満であると、コーティング膜に入射して取り込まれる光の割合をさほど低減できず、一方、隙間が５００μｍを越えると、金属膜の酸化や硫化の防止が不十分となる。ただし、隙間が５μｍ以上であっても、ＬＥＤチップがコーティング膜と干渉してその実装が難しい場合もあるので、隙間は５０μｍ以上であれば、更に好ましい。 Note that the size of the gap can be determined from the viewpoint of reducing the light incident on the coating film and preventing the oxidation and sulfidation of the metal film. Although not limited to this, it is 5 micrometers or more and 500 micrometers or less, for example. If the gap is less than 5 μm, the ratio of the light incident upon and taken in the coating film cannot be reduced so much. On the other hand, if the gap exceeds 500 μm, the metal film is not sufficiently prevented from being oxidized or sulfided. However, even if the gap is 5 μm or more, the LED chip may interfere with the coating film and may be difficult to mount. Therefore, the gap is more preferably 50 μm or more.
　このように本発明の発光装置によれば、コーティング膜の貫通孔内に配置されたＬＥＤチップの外周面と、貫通孔の内周面との間に隙間が形成されているので、ＬＥＤチップから射出された光がコーティング膜内に取り込まれにくくすることができ、コーティング膜による光の取り出し効率の低下を防ぐことができる。また、ＬＥＤチップが金属膜に直接載置されるので、当該ＬＥＤチップの放熱を効率よく行うことができ、ＬＥＤチップの温度上昇による性能低下が生じにくい。また、前記ＬＥＤチップは前記隙間によって前記金属膜の熱変形の影響しか受けず、ＬＥＤチップに接触する部材の熱変形量の違いによりＬＥＤチップにひび割れが生じる等の熱応力による問題も生じにくい。 As described above, according to the light emitting device of the present invention, the gap is formed between the outer peripheral surface of the LED chip disposed in the through hole of the coating film and the inner peripheral surface of the through hole. The emitted light can be made difficult to be taken into the coating film, and the reduction of the light extraction efficiency by the coating film can be prevented. Moreover, since the LED chip is directly mounted on the metal film, the LED chip can be efficiently radiated, and the performance is not easily lowered due to the temperature rise of the LED chip. In addition, the LED chip is only affected by the thermal deformation of the metal film due to the gap, and problems due to thermal stress such as cracking of the LED chip due to the difference in the amount of thermal deformation of the member in contact with the LED chip hardly occur.
　さらに、前記金属膜は、前記ＬＥＤチップの設置場所を除いて前記コーティング膜で覆われているので、前記金属膜の酸化や硫化等による変色を防ぐことができ、変色により反射率が低下して光の取り出し効率が低下しにくい。 Further, since the metal film is covered with the coating film except for the place where the LED chip is installed, the metal film can be prevented from being discolored due to oxidation or sulfuration, and the discoloration reduces the reflectance. Light extraction efficiency is unlikely to decrease.
本発明の一実施形態に係る発光装置の模式的上面図。1 is a schematic top view of a light emitting device according to an embodiment of the present invention. 同実施形態における発光装置の模式的断面図。FIG. 3 is a schematic cross-sectional view of the light emitting device according to the embodiment. 図６（ａ）に示した従来の発光装置におけるシミュレーション結果を示す模式図。The schematic diagram which shows the simulation result in the conventional light-emitting device shown to Fig.6 (a). 同実施形態の発光装置におけるシミュレーション結果を示す模式図。The schematic diagram which shows the simulation result in the light-emitting device of the embodiment. ＬＥＤチップとガラス膜との間に隙間が存在しない場合におけるシミュレーション結果を示す模式図。The schematic diagram which shows the simulation result in case a clearance gap does not exist between an LED chip and a glass film. 従来の発光装置の構成を示す模式的断面図。FIG. 6 is a schematic cross-sectional view illustrating a configuration of a conventional light emitting device.
　本発明の一実施形態について各図を参照しながら説明する。図１は本実施形態の発光装置１００の平面図であり、図２は図１のＡ－Ａ線断面図である。なお、図２における厚さ方向の寸法は分かりやすさのため、高さ方向の寸法を大きくし、実際の比率とは異ならせてある。 Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a plan view of the light emitting device 100 of the present embodiment, and FIG. 2 is a cross-sectional view taken along line AA of FIG. Note that the dimensions in the thickness direction in FIG. 2 are made different from the actual ratio for the sake of easy understanding.
　図１及び図２に示すように本実施形態の発光装置１００は、基板１と、基板１の表面上に形成した金属膜２と、前記金属膜２上に設けたＬＥＤチップ４と、前記金属膜２の略全域を覆うように形成したガラス膜（コーティング膜）３と、前記ガラス膜３及び前記ＬＥＤチップ４上を覆うように設けられた透光性樹脂層６を備えたものである。そして、本実施形態の発光装置１００は、前記ガラス膜３が前記ＬＥＤチップ４上及び当該ＬＥＤチップ４の周囲には設けられていないことを特徴とするものである。 As shown in FIGS. 1 and 2, the light emitting device 100 of the present embodiment includes a substrate 1, a metal film 2 formed on the surface of the substrate 1, an LED chip 4 provided on the metal film 2, and the metal A glass film (coating film) 3 formed so as to cover substantially the entire area of the film 2 and a translucent resin layer 6 provided so as to cover the glass film 3 and the LED chip 4 are provided. The light emitting device 100 of this embodiment is characterized in that the glass film 3 is not provided on the LED chip 4 and around the LED chip 4.
　各部について説明する。 Each part will be explained.
　前記基板１は、例えばセラミックで形成してあり、図１に示すように面板部が略正方形状をしている。この基板１の表面の中央部には、凹部であるキャビティ１１が形成してあり、その底部には、各ＬＥＤチップ４と配線により接続されるアノード５２とカソード５１を設けてある。 The substrate 1 is formed of, for example, ceramic, and the face plate portion has a substantially square shape as shown in FIG. A cavity 11 as a recess is formed at the center of the surface of the substrate 1, and an anode 52 and a cathode 51 connected to each LED chip 4 by wiring are provided at the bottom.
　前記金属膜２は、前記キャビティ１１の表面上を覆うように形成された銀（Ａｇ）の膜であり、前記ＬＥＤチップ４から前記基板１側へと射出された光を反射し、光照射側へと戻すためのものである。図２に示すようにこの金属膜２は、前記キャビティ１１の側面及び底面のすべてを覆うように形成してある。本実施形態では、前記金属膜２を銀から構成したが、その他、銅、アルミニウム、金、タングステン、鉄、ニッケル、等の金属、又は、各種合金など、ＬＥＤチップ４から射出された光を効果的に反射する材料特性を有するものであればよい。 The metal film 2 is a silver (Ag) film formed so as to cover the surface of the cavity 11, reflects the light emitted from the LED chip 4 toward the substrate 1, and emits light on the light irradiation side. It is for returning. As shown in FIG. 2, the metal film 2 is formed so as to cover all of the side surfaces and the bottom surface of the cavity 11. In the present embodiment, the metal film 2 is made of silver, but the light emitted from the LED chip 4 such as copper, aluminum, gold, tungsten, iron, nickel, or other metals or various alloys is also effective. Any material may be used as long as it has a material characteristic of reflective reflection.
　前記ガラス膜３は、前記透光性樹脂層６よりも屈折率が大きいガラスから構成され、透光性及びガスバリア性を有し、前記金属膜２が外気と接触して酸化したり、硫化したりするのを防止する。そして、図１に示すように前記ガラス膜３は、前記キャビティ１１の底面において、前記ＬＥＤチップ４が実装される部分には貫通孔３１を有するように形成してある。また、アノード５２、カソード５１の設置部分についても電極露出孔が形成してある。 The glass film 3 is made of glass having a refractive index larger than that of the translucent resin layer 6 and has translucency and gas barrier properties. The metal film 2 is oxidized or sulfided in contact with the outside air. Is prevented. And as shown in FIG. 1, the said glass film 3 is formed in the bottom face of the said cavity 11 so that it may have the through-hole 31 in the part in which the said LED chip 4 is mounted. Electrode exposure holes are also formed in the installed portions of the anode 52 and the cathode 51.
　前記貫通孔３１は、図１及び図２に示すように、平面視において前記ＬＥＤチップ４よりも大きく形成されてその略中央にＬＥＤチップ４が配置される。このため、貫通孔３１とＬＥＤチップ４とは所定距離離間して、貫通孔３１の内周面とＬＥＤチップ４の外周面との間には隙間が形成され、両者が接触しないようになっている。従って、この貫通孔３１の部分においてはＬＥＤチップ４と、その周囲の金属膜２が露出している。尚、前記隙間部分には、前記透光性樹脂層６が充填される。 1 and 2, the through hole 31 is formed larger than the LED chip 4 in a plan view, and the LED chip 4 is disposed at the approximate center thereof. For this reason, the through hole 31 and the LED chip 4 are separated by a predetermined distance, and a gap is formed between the inner peripheral surface of the through hole 31 and the outer peripheral surface of the LED chip 4 so that they do not come into contact with each other. Yes. Therefore, the LED chip 4 and the surrounding metal film 2 are exposed in the portion of the through hole 31. The gap portion is filled with the translucent resin layer 6.
　前記隙間の大きさとしては、例えば、５μｍ以上５００μｍ以下を挙げることができる。隙間が小さいと、ガラス膜３に入射して取り込まれる光の割合をさほど低減できず、一方、隙間が大きいと、金属膜２の酸化や硫化の防止が不十分となる。したがって、５μｍ以上５００μｍ以下の大きさの隙間であれば、ガラス膜３に入射する光の割合を低減して光の取り出し効率を高めることもできるし、金属膜２の酸化や硫化を十分に防止することもできる。ただし、隙間が５μｍ以上であっても、ＬＥＤチップ４がガラス膜３と干渉してその実装が難しい場合があるので、隙間は５０μｍ以上であることが好ましい。 The size of the gap can be, for example, 5 μm or more and 500 μm or less. If the gap is small, the ratio of the light incident upon the glass film 3 and taken in cannot be reduced so much. On the other hand, if the gap is large, the metal film 2 is not sufficiently prevented from being oxidized or sulfided. Therefore, if the gap has a size of 5 μm or more and 500 μm or less, the ratio of light incident on the glass film 3 can be reduced to increase the light extraction efficiency, and the metal film 2 can be sufficiently prevented from being oxidized or sulfided. You can also However, even if the gap is 5 μm or more, the LED chip 4 may interfere with the glass film 3 and may be difficult to mount, and therefore the gap is preferably 50 μm or more.
　尚、この貫通孔３１と前記電極露出孔は、例えば金属膜２上の全域にわたってまずガラスコーティングを行った後、前記ＬＥＤチップ４が実装される箇所とアノード５２、カソード５１が配置される箇所についてエッチング等によりガラスを取り除くことによって形成することができる。 The through hole 31 and the electrode exposure hole are, for example, a portion where the LED chip 4 is mounted and a portion where the anode 52 and the cathode 51 are disposed after first glass coating is performed over the entire area on the metal film 2. It can be formed by removing glass by etching or the like.
　このように前記ガラス膜３は前記ＬＥＤチップ４の周囲を除き前記金属膜２を覆って外気との接触を防止しているので、金属膜２の酸化や硫化による変色が生じにくく、前記ＬＥＤチップ４からの光の取り出し効率が低下しにくい。すなわち、本実施形態の発光装置１００は経時変化が生じにくく、所定の性能を長期間保つことができる。 Thus, since the glass film 3 covers the metal film 2 except for the periphery of the LED chip 4 to prevent contact with the outside air, the metal film 2 is unlikely to be discolored due to oxidation or sulfidation, and the LED chip. The light extraction efficiency from 4 is unlikely to decrease. That is, the light emitting device 100 of the present embodiment hardly changes with time, and can maintain a predetermined performance for a long time.
　さらに、前記ガラス膜３の貫通孔３１の内周面と前記ＬＥＤチップ４の外周面との間に隙間を形成してあるので、後述するようにＬＥＤチップ４から基板１側へと射出された光がガラス膜３内に取り込まれにくい。 Further, since a gap is formed between the inner peripheral surface of the through hole 31 of the glass film 3 and the outer peripheral surface of the LED chip 4, the glass chip 3 is injected from the LED chip 4 to the substrate 1 side as will be described later. Light is not easily taken into the glass film 3.
　従って、ガラス膜３により金属膜２の経時変化を防ぎつつ、光の取り出し効率を従来よりも高めることができる。 Therefore, the glass film 3 can improve the light extraction efficiency as compared with the prior art while preventing the metal film 2 from changing with time.
　また、従来であればガラスと金属という熱膨張率が大きく異なる素材が前記ＬＥＤチップ４の上下面に接触していたために、ＬＥＤチップ４に過大な熱応力がかかってひび割れが生じる等していたが、本実施形態であれば、ＬＥＤチップ４は前記隙間によって金属膜２の熱変形の影響しか受けず、上述したような問題が生じることもない。さらに、ＬＥＤチップ４は、金属膜２の上に直接載置されているため、この金属膜２を介して基板１側に効率よく放熱することができる。これらのことから、熱によりＬＥＤチップ４の発光特性が変化するのも防ぐことができる。 In addition, conventionally, a material having a large coefficient of thermal expansion such as glass and metal is in contact with the upper and lower surfaces of the LED chip 4, so that excessive thermal stress is applied to the LED chip 4 to cause cracks. However, in this embodiment, the LED chip 4 is only affected by the thermal deformation of the metal film 2 due to the gap, and the above-described problem does not occur. Furthermore, since the LED chip 4 is mounted directly on the metal film 2, heat can be efficiently radiated to the substrate 1 side via the metal film 2. From these things, it can also prevent that the light emission characteristic of LED chip 4 changes with a heat | fever.
　尚、本実施形態では、ＬＥＤチップ４が透光性樹脂層６により覆われ、また、前記隙間に透光性樹脂層６が充填されているが、この透光性樹脂層６は、ガラスと比べて柔らかいため、透光性樹脂層６によってＬＥＤチップ４に熱応力はかかりにくいうえ、かかったとしても、ごく僅かである。従って、透光性樹脂層６によって熱応力がＬＥＤチップ４にかかり、ガラスのときのような問題が生じることはない。 In the present embodiment, the LED chip 4 is covered with a translucent resin layer 6 and the translucent resin layer 6 is filled in the gap. The translucent resin layer 6 is made of glass and Since the LED chip 4 is not easily subjected to thermal stress by the translucent resin layer 6, it is very little even if applied. Therefore, thermal stress is applied to the LED chip 4 by the translucent resin layer 6, and there is no problem as in the case of glass.
　最後に前記ＬＥＤチップ４が前記貫通孔３１内に配置してあるとともに、前記ガラス膜３と前記ＬＥＤチップ４が離間していることにより、光の取り出し効率が向上することについて詳細に説明する。 Finally, it will be described in detail that the LED chip 4 is disposed in the through hole 31 and that the glass film 3 and the LED chip 4 are separated from each other, thereby improving the light extraction efficiency.
　図３は図６（ａ）に示した従来の発光装置１００Ａにおいて、前記ＬＥＤチップ４Ａから基板１Ａ側へと射出された光の軌跡のシミュレーション結果を示したものである。また、図４は本実施形態の発光装置１００において前記ＬＥＤチップ４から基板１側へと射出された光の軌跡のシミュレーション結果を示したものである。加えて、図５はガラス膜３Ｃの貫通孔内にＬＥＤチップ４Ｃが配置してあり、貫通孔の内周面とＬＥＤチップ４Ｃの外周面とが接している場合において、ＬＥＤチップ４Ｃから基板側へと射出された光の軌跡のシミュレーション結果を示したものである。尚、シミュレーションの条件として、ガラス膜３Ａ，３，３Ｃ、透光性樹脂層６Ａ，６，６Ｃ、ＬＥＤチップ４Ａ，４，４Ｃの屈折率は、それぞれ、１．５，１．４及び１．７に設定した。 FIG. 3 shows a simulation result of the locus of light emitted from the LED chip 4A to the substrate 1A side in the conventional light emitting device 100A shown in FIG. 6 (a). FIG. 4 shows a simulation result of the trajectory of light emitted from the LED chip 4 to the substrate 1 side in the light emitting device 100 of the present embodiment. In addition, in FIG. 5, the LED chip 4 </ b> C is disposed in the through hole of the glass film 3 </ b> C, and when the inner peripheral surface of the through hole and the outer peripheral surface of the LED chip 4 </ b> C are in contact with each other, The simulation result of the locus | trajectory of the light inject | emitted to the is shown. As the simulation conditions, the refractive indexes of the glass films 3A, 3, 3C, the translucent resin layers 6A, 6, 6C, and the LED chips 4A, 4, 4C are 1.5, 1.4, and 1. 7 was set.
　図３に示すようにガラス膜３Ａ上に前記ＬＥＤチップ４Ａが載置されている場合、前記ＬＥＤチップ４Ａから基板１Ａ側へと射出された光は、前記ガラス膜３Ａ内に入射し、入射した光の大部分は、ガラス膜３Ａと透光性樹脂層６Ａとの屈折率の関係からこのガラス膜３Ａ内で反射を繰り返して、光照射側へと取り出すことができなくなっていることがわかる。すなわち、従来においてはこのガラス膜３Ａ内に取り込まれた分の光が損失となって、光の取り出し効率が低下している。 As shown in FIG. 3, when the LED chip 4A is placed on the glass film 3A, the light emitted from the LED chip 4A toward the substrate 1A enters the glass film 3A and enters the glass film 3A. From the relationship between the refractive indexes of the glass film 3A and the translucent resin layer 6A, it can be seen that most of the light is repeatedly reflected in the glass film 3A and cannot be extracted to the light irradiation side. That is, conventionally, the amount of light taken into the glass film 3A is lost, and the light extraction efficiency is reduced.
　一方、本実施形態の発光装置１００であれば、前記ＬＥＤチップ４の周囲近傍にはガラス膜３が存在しないので、隙間を設定した分だけ、図４に示すようにＬＥＤチップ４から基板１側へと射出された光が金属膜２により光照射側へと反射されることとなり、僅かな光しかガラス膜３に入射しない。従って、ガラス膜３と透光性樹脂層６との屈折率の関係からこのガラス膜３内で反射を繰り返す光は僅かであり、ガラス膜３に取り込まれる光がほとんどないことがわかる。つまり、本実施形態の発光装置１００であれば、ガラス膜３内に入射する光自体を減少させることができるので、このガラス膜３内で反射を繰り返す光も当然に少なくなって、光の取り出し効率を向上させることができる。 On the other hand, in the light emitting device 100 of the present embodiment, since the glass film 3 does not exist in the vicinity of the LED chip 4, the LED chip 4 is disposed on the side of the substrate 1 as shown in FIG. The light emitted into the glass is reflected by the metal film 2 toward the light irradiation side, so that only a small amount of light enters the glass film 3. Therefore, it can be seen from the relationship between the refractive indexes of the glass film 3 and the translucent resin layer 6 that there is little light that repeats reflection in the glass film 3 and there is almost no light taken into the glass film 3. That is, with the light emitting device 100 according to the present embodiment, the light itself that enters the glass film 3 can be reduced, so that the amount of light that repeatedly reflects in the glass film 3 is naturally reduced, and the light is extracted. Efficiency can be improved.
　さらに、本実施形態とは異なり、貫通孔の内周面とＬＥＤチップ４Ｃの外周面との間に隙間を形成せずにガラス膜３ＣとＬＥＤチップ４Ｃとを接触させている場合（発光装置１００Ｃ）、図５に示すようにＬＥＤチップ４Ｃの周囲近傍に射出された光は、前記発光装置１００Ａと同様、その一部がガラス膜３Ｃ内に入射して、入射した光の大部分が、ガラス膜３Ｃと透光性樹脂層６Ｃとの屈折率の関係からこのガラス膜３Ｃ内で反射を繰り返していることがわかる。従って、貫通孔の内周面とＬＥＤチップ４Ｃの外周面との間に隙間を設けない場合でもガラス膜３Ｃによる光の損失が生じ、光の取り出し効率が低下する。 Further, unlike the present embodiment, when the glass film 3C and the LED chip 4C are in contact with each other without forming a gap between the inner peripheral surface of the through hole and the outer peripheral surface of the LED chip 4C (light emitting device 100C). 5) As shown in FIG. 5, part of the light emitted near the periphery of the LED chip 4C enters the glass film 3C as in the light emitting device 100A, and most of the incident light is made of glass. From the relationship between the refractive indexes of the film 3C and the translucent resin layer 6C, it can be seen that reflection is repeated in the glass film 3C. Therefore, even when a gap is not provided between the inner peripheral surface of the through hole and the outer peripheral surface of the LED chip 4C, light loss due to the glass film 3C occurs, and the light extraction efficiency decreases.
　逆に言うと、本実施形態の発光装置１００のように貫通孔３１の内周面とＬＥＤチップ４の外周面との間に隙間を形成することによって初めてガラス膜３内に取り込まれる光の量を低減し、ガラス膜３を設けた場合でも光の取り出し効率を向上させられることが分かる。 Conversely, the amount of light taken into the glass film 3 only by forming a gap between the inner peripheral surface of the through hole 31 and the outer peripheral surface of the LED chip 4 as in the light emitting device 100 of the present embodiment. It can be seen that even when the glass film 3 is provided, the light extraction efficiency can be improved.
　その他の実施形態について説明する。 Other embodiments will be described.
　前記実施形態では、ガラス膜をコーティング膜としたが、その他のガスバリア性を有する部材をコーティング膜としてもよい。また、ガラスの組成についてもクラック等が生じにくいものであればどのようなものであってもよい。要するに、前記金属膜に長期間にわたって外気が接触することを防ぐことができ、透光性を有する素材であればどのようなものであってもよい。 In the above embodiment, the glass film is the coating film, but other members having gas barrier properties may be the coating film. Further, any glass composition may be used as long as cracks and the like are not easily generated. In short, any material can be used as long as it can prevent the outside air from coming into contact with the metal film for a long period of time and has a light-transmitting property.
　また、ＬＥＤチップの形状や、射出される光の波長等は特に限定されるものではなく、様々なＬＥＤチップにより本発明を構成することができる。さらに、前記実施形態のようにキャビティ内に１つのＬＥＤチップを配置するのではなく、複数のＬＥＤチップを配置するようにしてもよい。 Further, the shape of the LED chip, the wavelength of the emitted light, and the like are not particularly limited, and the present invention can be configured by various LED chips. Furthermore, instead of arranging one LED chip in the cavity as in the above embodiment, a plurality of LED chips may be arranged.
　また、上例では、金属膜として、光を反射する性質を有するものを、コーティング膜として、透光性とガスバリア性を有するものをそれぞれ採用したが、必ずしもこれに限られるものではなく、このような性質を有さないものを金属膜やコーティング膜に採用しても良い。 In the above example, the metal film has a property of reflecting light, and the coating film has a light-transmitting property and a gas barrier property. However, the present invention is not necessarily limited to this. Those having no special properties may be used for the metal film or the coating film.
　その他、本発明の趣旨に反しない限りにおいて様々な変形や実施形態の組み合わせを行ってもかまわない。 In addition, various modifications and combinations of embodiments may be performed without departing from the spirit of the present invention.
　本発明は、経時変化が小さく、かつ、光の取り出し効率の高い発光装置として利用することができる。 The present invention can be used as a light-emitting device with little change with time and high light extraction efficiency.
１００　　：発光装置
１　　　　：基板
１１　　　：キャビティ
２　　　　：金属膜
３　　　　：ガラス膜（コーティング膜）
３１　　　：貫通孔
４　　　　：ＬＥＤチップ
６　　　　：透光性樹脂 100: Light-emitting device 1: Substrate 11: Cavity 2: Metal film 3: Glass film (coating film)
31: Through hole 4: LED chip 6: Translucent resin

Claims (4)

  1. 　基板と、
    　基板の表面上に形成された金属膜と、
    　前記金属膜上に設けられるＬＥＤチップと、
    　前記金属膜上に形成されたコーティング膜とを備え、
    　前記コーティング膜には、その膜厚方向に貫通し、内部に前記ＬＥＤチップが配置される貫通孔が形成されており、
    　平面視において前記貫通孔は、前記ＬＥＤチップよりも大きく形成され、前記ＬＥＤチップの外周面及び前記貫通孔の内周面の間に隙間が形成されていることを特徴とする発光装置。     A substrate,
    A metal film formed on the surface of the substrate;
    An LED chip provided on the metal film;
    A coating film formed on the metal film,
    In the coating film, a through-hole penetrating in the film thickness direction and having the LED chip disposed therein is formed,
    In the plan view, the through hole is formed larger than the LED chip, and a gap is formed between the outer peripheral surface of the LED chip and the inner peripheral surface of the through hole.
  2. 　前記コーティング膜が、ガラス膜である請求項１記載の発光装置。 The light-emitting device according to claim 1, wherein the coating film is a glass film.
  3. 　前記コーティング膜及び前記ＬＥＤチップ上を覆う透光性樹脂層をさらに備えた請求項１に記載の発光装置。 The light emitting device according to claim 1, further comprising a translucent resin layer covering the coating film and the LED chip.
  4. 　前記コーティング膜の屈折率が、前記透光性樹脂層の屈折率よりも大きい請求項３記載の発光装置。 4. The light emitting device according to claim 3, wherein a refractive index of the coating film is larger than a refractive index of the translucent resin layer.
PCT/JP2013/077988 2012-10-23 2013-10-15 Light-emitting device WO2014065162A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231440A (en) * 2008-03-21 2009-10-08 Nippon Carbide Ind Co Inc Wiring substrate for mounting light emitting element, and light emitting device
WO2010140640A1 (en) * 2009-06-02 2010-12-09 三菱化学株式会社 Metal substrate and light source device

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