WO2014061212A1 - 多結晶シリコン製造用原料ガスの供給方法および多結晶シリコン - Google Patents
多結晶シリコン製造用原料ガスの供給方法および多結晶シリコン Download PDFInfo
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- WO2014061212A1 WO2014061212A1 PCT/JP2013/005802 JP2013005802W WO2014061212A1 WO 2014061212 A1 WO2014061212 A1 WO 2014061212A1 JP 2013005802 W JP2013005802 W JP 2013005802W WO 2014061212 A1 WO2014061212 A1 WO 2014061212A1
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- polycrystalline silicon
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- source gas
- material gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
Definitions
- the reactor 100 used in the present invention has one or more source gas supply nozzles 9 such that the flow pattern of the source gas in the furnace is an upflow at the center of the reactor and a downflow at the side of the outer wall of the reactor. Is arranged.
- the gas supply port of the source gas supply nozzle 9 is used as an index for controlling the thickness of the boundary layer that controls the diffusion of the source gas such as chlorosilane from the gas phase side to the solid phase side as the reaction site.
- the sum of the values Q ⁇ u 2 / V when the flow rate of the raw material gas is u (m / sec), the supply amount of the raw material gas is Q (kg / sec), and the internal volume of the reactor 100 is V (m 3 ) ⁇ (Q ⁇ u 2 / V) is defined.
- This ⁇ (Q ⁇ u 2 / V) can be understood as an index of the kinetic energy of the raw material gas supplied per unit volume / unit time into the reactor 100.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Plasma & Fusion (AREA)
- Silicon Compounds (AREA)
Abstract
Description
HSiCl3 + H2 → Si + 3HCl
HSiCl3 + HCl → SiCl4 + H2
1 ベルジャ
2 のぞき窓
3 冷媒入口(ベルジャ)
4 冷媒出口(ベルジャ)
5 底板
6 冷媒入口(底板)
7 冷媒出口(底板)
8 反応排ガス出口
9 ガス供給ノズル
10 電極
11 芯線ホルダ
12 シリコン芯線
13 多結晶シリコン棒
Claims (6)
- シーメンス法により多結晶シリコンを製造するための反応炉に原料ガスを供給する方法であって、
反応炉内の前記原料ガスのフローパターンが、反応炉中心部では上昇流となり反応炉外壁側部では下降流となるように1以上の原料ガス供給ノズルを配置した反応炉を用い、
0.25MPa~0.9MPaの反応圧力下で多結晶シリコンの析出反応を行う際に、前記原料ガス供給ノズルのガス供給口における原料ガスの流速をu(m/sec)、原料ガス供給量をQ(kg/sec)、前記反応炉の内容積をV(m3)としたときの値Q×u2/Vの合計Σ(Q×u2/V)が2500(kg/m・sec3)以上となるように前記原料ガス供給ノズルのそれぞれのuおよびQの値を設定する、ことを特徴とする多結晶シリコン製造用原料ガスの供給方法。 - 前記反応炉に設けられている前記1以上の原料ガス供給ノズルは、何れも、前記反応炉の底板の面積をS0としたときに、該底板の中央部に中心を有する面積SがS0/2の仮想同心円の内側に設けられている、請求項1に記載の多結晶シリコン製造用原料ガスの供給方法。
- 前記0.25MPa~0.9MPaの反応圧力下で多結晶シリコンの析出反応を行う際の反応温度を980℃~1150℃の範囲に設定する、請求項1又は2に記載の多結晶シリコン製造用原料ガスの供給方法。
- 前記合計Σ(Q×u2/V)が2500(kg/m・sec3)以上となるように前記原料ガス流速uを得る際に、前記原料ガス供給ノズルに供給される原料ガス圧力を1MPa~2MPaに設定する、請求項3に記載の多結晶シリコン製造用原料ガスの供給方法。
- 前記1MPa~2MPaの原料ガス圧力の設定を、原料ガスの圧縮機による圧縮昇圧または液体原料の高温での気化の少なくとも一方による、請求項4に記載の多結晶シリコン製造用原料ガスの供給方法。
- 請求項1乃至5の何れか1項に記載の方法で供給された多結晶シリコン製造用原料ガスを析出させて得られた多結晶シリコン。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201380054109.7A CN104736480B (zh) | 2012-10-16 | 2013-09-30 | 多晶硅制造用原料气体的供给方法和多晶硅 |
US14/435,316 US9263261B2 (en) | 2012-10-16 | 2013-09-30 | Method for supplying source gas for producing polycrystalline silicon and polycrystalline silicon |
EP13847385.5A EP2910525A4 (en) | 2012-10-16 | 2013-09-30 | METHOD FOR SUPPLYING SOURCE GAS TO PRODUCE POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON |
KR1020157012501A KR20150070286A (ko) | 2012-10-16 | 2013-09-30 | 다결정 실리콘 제조용 원료 가스의 공급 방법 및 다결정 실리콘 |
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JP2012228643A JP5917359B2 (ja) | 2012-10-16 | 2012-10-16 | 多結晶シリコン製造用原料ガスの供給方法および多結晶シリコン |
JP2012-228643 | 2012-10-16 |
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WO2014061212A1 true WO2014061212A1 (ja) | 2014-04-24 |
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PCT/JP2013/005802 WO2014061212A1 (ja) | 2012-10-16 | 2013-09-30 | 多結晶シリコン製造用原料ガスの供給方法および多結晶シリコン |
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US (1) | US9263261B2 (ja) |
EP (1) | EP2910525A4 (ja) |
JP (1) | JP5917359B2 (ja) |
KR (1) | KR20150070286A (ja) |
CN (1) | CN104736480B (ja) |
MY (1) | MY170502A (ja) |
WO (1) | WO2014061212A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016027416A1 (ja) * | 2014-08-18 | 2016-02-25 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
WO2016035249A1 (ja) * | 2014-09-04 | 2016-03-10 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
Families Citing this family (1)
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KR101895526B1 (ko) * | 2015-08-28 | 2018-09-05 | 한화케미칼 주식회사 | 폴리실리콘 제조 장치 |
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- 2013-09-30 KR KR1020157012501A patent/KR20150070286A/ko not_active Application Discontinuation
- 2013-09-30 EP EP13847385.5A patent/EP2910525A4/en active Pending
- 2013-09-30 MY MYPI2015701165A patent/MY170502A/en unknown
- 2013-09-30 US US14/435,316 patent/US9263261B2/en active Active
- 2013-09-30 WO PCT/JP2013/005802 patent/WO2014061212A1/ja active Application Filing
- 2013-09-30 CN CN201380054109.7A patent/CN104736480B/zh active Active
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016027416A1 (ja) * | 2014-08-18 | 2016-02-25 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
JP2016041636A (ja) * | 2014-08-18 | 2016-03-31 | 信越化学工業株式会社 | 多結晶シリコン棒の製造方法および多結晶シリコン棒 |
WO2016035249A1 (ja) * | 2014-09-04 | 2016-03-10 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
JP2016052970A (ja) * | 2014-09-04 | 2016-04-14 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造装置、多結晶シリコンの製造方法、及び、多結晶シリコン棒または多結晶シリコン塊 |
CN106573784A (zh) * | 2014-09-04 | 2017-04-19 | 信越化学工业株式会社 | 多晶硅制造用反应炉、多晶硅制造装置、多晶硅的制造方法、以及多晶硅棒或多晶硅块 |
KR20170053613A (ko) * | 2014-09-04 | 2017-05-16 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 다결정 실리콘 제조용 반응로, 다결정 실리콘 제조 장치, 다결정 실리콘의 제조 방법, 및 다결정 실리콘 봉 또는 다결정 실리콘 괴 |
EP3190086A4 (en) * | 2014-09-04 | 2018-03-21 | Shin-Etsu Chemical Co., Ltd. | Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and, polycrystalline silicon rod or polycrystalline silicon ingot |
KR102182159B1 (ko) | 2014-09-04 | 2020-11-24 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 다결정 실리콘 제조용 반응로, 다결정 실리콘 제조 장치, 다결정 실리콘의 제조 방법, 및 다결정 실리콘 봉 또는 다결정 실리콘 괴 |
US10858258B2 (en) | 2014-09-04 | 2020-12-08 | Shin-Etsu Chemical Co., Ltd. | Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and polycrystalline silicon rod or polycrystalline silicon ingot |
US10870581B2 (en) | 2014-09-04 | 2020-12-22 | Shin-Etsu Chemical Co., Ltd. | Reaction furnace for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, method for producing polycrystalline silicon, and polycrystalline silicon rod or polycrystalline silicon ingot |
CN106573784B (zh) * | 2014-09-04 | 2022-05-27 | 信越化学工业株式会社 | 多晶硅制造用反应炉、多晶硅制造装置、多晶硅的制造方法、以及多晶硅棒或多晶硅块 |
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Publication number | Publication date |
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JP5917359B2 (ja) | 2016-05-11 |
JP2014080315A (ja) | 2014-05-08 |
US9263261B2 (en) | 2016-02-16 |
CN104736480A (zh) | 2015-06-24 |
EP2910525A1 (en) | 2015-08-26 |
KR20150070286A (ko) | 2015-06-24 |
CN104736480B (zh) | 2017-03-08 |
EP2910525A4 (en) | 2016-04-13 |
MY170502A (en) | 2019-08-08 |
US20150294864A1 (en) | 2015-10-15 |
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