WO2014059832A1 - 平行板电容器及包括该平行板电容器的加速度传感器 - Google Patents

平行板电容器及包括该平行板电容器的加速度传感器 Download PDF

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Publication number
WO2014059832A1
WO2014059832A1 PCT/CN2013/082626 CN2013082626W WO2014059832A1 WO 2014059832 A1 WO2014059832 A1 WO 2014059832A1 CN 2013082626 W CN2013082626 W CN 2013082626W WO 2014059832 A1 WO2014059832 A1 WO 2014059832A1
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Prior art keywords
plate
sensitive
connecting arm
component
parallel plate
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PCT/CN2013/082626
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English (en)
French (fr)
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郭梅寒
张新伟
夏长奉
苏巍
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无锡华润上华半导体有限公司
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Priority to JP2015537123A priority Critical patent/JP6260063B2/ja
Priority to EP13847107.3A priority patent/EP2910953B1/en
Priority to US14/435,925 priority patent/US9903884B2/en
Publication of WO2014059832A1 publication Critical patent/WO2014059832A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/06—Influence generators
    • H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0837—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being suspended so as to only allow movement perpendicular to the plane of the substrate, i.e. z-axis sensor

Definitions

  • the capacitor of the present invention relates in particular to a parallel plate capacitor.
  • MEMS Micro-electro-mechanical system
  • a MEMS accelerometer is a sensor device based on this technology.
  • the basic structure of a capacitive MEMS accelerometer is a capacitor composed of a mass and a fixed electrode.
  • the acceleration causes the mass to shift, the overlapping area or spacing between the electrodes of the capacitor is changed.
  • the measurement of the acceleration can be achieved by measuring the change in the capacitance of the capacitor.
  • the accelerating sensor composed of a flat-plate capacitor is less affected by parasitic capacitance and edge effect due to the simple process, and has lower requirements on the processing circuit and is more widely used.
  • the present invention provides a parallel plate capacitor.
  • the capacitor includes a first plate and a second plate disposed opposite the first plate, wherein the parallel plate capacitor further includes at least one pair of sensitive units disposed on the substrate forming the first plate,
  • the sensitive unit includes a sensitive element and a component connecting arm connecting the sensitive component to the first plate; an anchoring abutment disposed on the base on which the second plate is located, connected to the component by a cantilever beam An arm; wherein each of the component connecting arms is coupled to at least two anchoring supports that are symmetrical with respect thereto.
  • each of the sensitive elements is a mass
  • each of the element connecting arms and the cantilever beam is formed of silicon, and each element connecting arm is thicker than each of the cantilever beams.
  • the present invention also provides a parallel plate capacitor comprising a first plate and a second plate disposed opposite the first plate, further comprising at least one sensitive unit disposed on the substrate forming the first plate, The sensitive unit is surrounded by the first plate, and the sensitive unit includes a sensitive component and a component connecting arm connecting the sensitive component to the first plate; and is disposed on a substrate on which the second plate is located An anchoring support connected to the component connecting arm by a cantilever beam; wherein each component connecting arm is coupled to at least two anchoring supports that are symmetric with respect thereto.
  • the force of the sensitive component can be amplified by the action of the lever formed by the component connecting arm, the sensitive component and the first plate of the capacitor, so that the capacitor is more susceptible to the force and the capacitance is changed.
  • FIG. 1 is a schematic plan view showing the structure of a parallel plate capacitor 1 according to an embodiment of the present invention.
  • Figure 2 is a side elevational view of the plate capacitor of Figure 1 from a-a'.
  • FIG 3 is a plan view schematically showing the structure of a parallel plate capacitor 2 according to still another embodiment of the present invention.
  • FIG. 1 is a plan view showing the structure of a parallel plate capacitor in accordance with an embodiment of the present invention.
  • the illustrated parallel plate capacitor includes a first plate 10 and a second plate (not shown), a first pair of sensitive elements 21a, 21b and a second pair of sensitive elements 22a, 22b for respectively respectively sensing the first pair of sensitive elements 21a, 21b are connected to the component connecting arms 23a, 23b of the first plate 10 for connecting the second pair of sensitive elements 22a, 22b to the component connecting arms 24a, 24b of the first plate 10, respectively, at the second pole
  • the anchoring supports 30, 31, 32 and 33 of the plate connect the anchoring abutment 30 to the cantilever beam 30a of the component connecting arm 23a, and the anchoring abutment 31 to the cantilever beam 30b of the component connecting arm 23a, the anchor
  • the fixed support 32 is coupled to the cantilever beam 31a of the component connecting arm 24b
  • the anchoring support 32 is coupled to the cantilever beam 31b of
  • the anchoring support 33 is coupled to the cantilever beam 32b of the component connecting arm 23b, the anchoring abutment 33 is coupled to the cantilever beam 33a of the component connecting arm 24a, and the anchoring abutment 30 is coupled to the cantilever beam 33b of the component connecting arm 24a.
  • each cantilever beam is perpendicular to the component connecting arm to which it is attached.
  • the sensitive component and the component connecting arm form a sensitive unit which are disposed on the silicon substrate on which the first plate is located.
  • the sensitive element is for example a mass.
  • the sensitive element and the component connecting arm are each formed of a silicon material in this example, for example, by etching on a substrate to obtain a sensitive component and a component connecting arm, it being understood that the weight of the mass is large.
  • Each cantilever beam is also formed of a silicon material on the silicon substrate on which the first plate is located, and each cantilever beam is thinner than the component connecting arm.
  • An anchoring support disposed on the second plate extends from the second plate to the first plate and is fixedly coupled to the corresponding cantilever beam.
  • two elements of each pair of sensitive elements in each sensitive unit are symmetrically disposed on opposite sides of the conductive portion.
  • two pairs of sensitive components are provided.
  • the first pair of sensitive elements 21a, 21b are respectively disposed on both sides of the first plate 10, so that the sensitive element 21a is disposed on the left side of the first plate 10, and the sensitive element 21b is opposite to the view when viewed from the normal reading.
  • the ground connection arm 23a and the component connection arm 23b have the same length on the right side of the first plate 10.
  • the second pair of sensitive elements 22a, 22b are respectively disposed on the other two sides of the first plate 10, so that the sensitive element 22a is disposed on the upper side of the first plate 10, the sensitive element 22b, in view of the view when the figure is normally read. Then, the opposite side of the first plate 10 is disposed, and the length of the element connecting arm 24a and the element connecting arm 24b are the same.
  • each of the sensitive elements is an equivalent mass.
  • the masses are connected to the first plate 10 by respective component connecting arms, thereby forming a lever. That is to say, the component connecting arm 23a functions as a lever, one end of which is the sensitive component 21a and the other end of which is the first plate 10, and the same applies to other sensitive components and component connecting arms, and will not be described again.
  • Figure 2 is a side elevational view of the plate capacitor of Figure 1 from a-a'.
  • anchoring supports 30 and 33 for supporting the levers (i.e., component connecting arms) 23a and 23b are provided (since from a-a' Side view, thus anchoring supports 31 and 32 are not shown).
  • the mass 21a is connected to the first plate 10 by a lever 23a
  • the mass 21b is connected to the second plate 10 by a lever 23b.
  • each sensitive component such as each mass
  • the component connecting arms ie, the respective levers
  • the cantilever beam is deformed by the force transmitted from the component connecting arm, and the deformation causes the displacement of the first plate 10 to be larger, that is, The displacement of the first plate in the same direction as the acceleration direction is made larger, and accordingly the capacitance change between the first plate and the second plate is larger. Due to the lever structure formed by the sensitive component, the component connecting arm and the first plate, the two plates obtain a larger displacement at the same acceleration, thereby causing a larger change in capacitance, thereby including an acceleration sensor of the plate capacitor. More sensitive.
  • the panel capacitor includes two pairs of sensitive units, but the invention is not limited thereto. In practical applications, more pairs of sensitive units or only one pair can be set as needed.
  • FIG. 3 is a plan view showing the structure of a parallel plate capacitor in accordance with still another embodiment of the present invention.
  • the lever formed by the sensitive component and the component connecting arm in this example, and the cantilever beam connecting the anchoring support and the component connecting arm are formed on the inner side of the first plate, also That is to say, the sensitive unit in this example is surrounded by the first plate, and the sensitive element in this example includes only one sensitive unit.
  • the capacitor includes a first plate 40 and a second plate (not shown), and a sensing element 50 for connecting the sensing element 50 to the component connecting arms 50a, 50b of the first plate 40, 50c and 50d, anchoring brackets 60, 61, 62 and 63 disposed on the second plate, connecting the anchoring bracket 60 to the cantilever beam 60a of the component connecting arm 50a, connecting the anchoring bracket 61 to the component connection
  • the cantilever beam 60b of the arm 50a connects the anchoring abutment 61 to the cantilever beam 61a of the component connecting arm 50b, the anchoring abutment 62 to the cantilever beam 61b of the component connecting arm 50b, and the anchoring abutment 62 to the component
  • the cantilever beam 62a of the connecting arm 50c connects the anchoring bracket 63 to the cantilever beam 62b of the component connecting arm 50c, connects the anchoring bracket 63 to the cantilever beam 63a of the component connecting arm 50d
  • the sensitive component and the component connecting arm form a sensitive unit which are disposed on the silicon substrate on which the first plate is located.
  • the sensitive element is for example a mass.
  • the sensitive element and the component connecting arm are each formed of a silicon material in this example, for example, by etching on a substrate to obtain a sensitive component and a component connecting arm, it being understood that the weight of the mass is large.
  • Each cantilever beam is also formed of a silicon material on the silicon substrate on which the first plate is located, and each cantilever beam is thinner than the component connecting arm.
  • An anchoring support disposed on the second plate extends from the second plate to the first plate and is fixedly coupled to the corresponding cantilever beam.
  • the lengths of the element connecting arms that are symmetrical with respect to the sensitive elements are the same, and it is more preferable that the lengths of the connecting arms of the respective elements are the same.
  • the sensitive elements are equivalent masses that are connected to the first plate 40 by the element connecting arms, thereby forming a lever based on the element connecting arms. That is, the component connecting arm 50a functions as a lever, one end of which is the sensitive component 50 and the other end of which is the first plate 40. The same applies to the sensitive component 50 and other connecting arms, and will not be described again.
  • each sensitive component such as each mass
  • the arms ie, the levers
  • the deformation causes the first plate 10 to be displaced more in the same direction as the acceleration direction, thereby making The amount of capacitance change between the first plate and the second plate is correspondingly larger. Due to the sensitive component, the component connecting arm and the lever structure formed by the first plate, the two plates obtain a larger displacement at the same acceleration, thereby causing a larger change in capacitance, thereby including an acceleration sensor of the plate capacitor. More sensitive.
  • a substrate of other materials such as tantalum silicide or the like may be used.
  • the points at which the component connecting arms are connected to the cantilever beam are closer to the mass.

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Abstract

一种平行板电容器，包括第一极板（10）和与第一极板（10）相对设置的第二极板。该平行板电容器还包括在形成第一极板（10）的基底上设置的至少一对敏感单元。敏感单元包括敏感元件（21a、21b、22a、22b）和将敏感元件（21a、21b、22a、22b）连接到第一极板（10）的元件连接臂（23a、23b、24a、24b）。该平行板电容器还包括设置在第二极板所在基底上的锚定支座（30、31、32、33），其通过悬臂梁（30a、30b、31a、31b、32a、32b、33a、33b）连接到元件连接臂（23a、23b、24a、24b）。每个元件连接臂（23a、23b、24a、24b）与相对于其对称的至少两个锚定支座（30、31、32、33）连接。该平行板电容器更容易受到外界因素影响，从而更容易产生电容的变化。还公开了一种包括该平行板电容器的加速度传感器。

Description

平行板电容器及加速度传感器
【技术领域】
本发明电容器，尤其涉及平行板电容器。
【背景技术】
微机电系统（Micro-electro-mechanical System, MEMS）是近年来发展起来的一个多学科交叉的前沿性高技术领域。MEMS利用从半导体技术上发展起来的硅微机械加工工艺，主要以硅为材料，在硅片上制作出尺寸在微米量级、悬浮可动的三维结构，实现对外界信息的感知和控制。MEMS加速度传感器便是基于该技术的一种传感器件。
如大家所知道的，电容式MEMS加速度传感器的基本结构为质量块与固定电极组成的电容器。当加速度使得质量块产生位移时，改变电容器的电极之间的重叠面积或间距，在这样的情况下，便可通过测量电容器电容的改变来实现对加速度的测量。作为MEMS加速传感器的一种，由平板电容器构成的加速传感器由于工艺简单，受寄生电容和边缘效应的影响较小，对处理电路的要求较低且应用更为广泛。
但是，由于当前这种加速度传感器的平板电容器的电容变化范围较小，导致传感器的灵敏度较低。
【发明内容】
有鉴于此，本发明提供一种平行板电容器。该电容器包括第一极板和与第一极板相对设置的第二极板，其中，该平行板电容器还包括在形成所述第一极板的基底上设置的至少一对敏感单元，所述敏感单元包括敏感元件和将敏感元件连接到所述第一极板的元件连接臂；设置在所述第二极板所在的基底上的锚定支座，其通过悬臂梁连接到所述元件连接臂；其中，每个元件连接臂与相对于其对称的至少两个锚定支座连接。
优选地，在该平行板电容器中，各敏感元件为质量块，各元件连接臂和悬臂梁均由硅形成，且各元件连接臂比各悬臂梁厚。
本发明还提供一种平行板电容器，其包括第一极板和与第一极板相对设置的第二极板，还包括在形成所述第一极板的基底上设置的至少一个敏感单元，所述敏感单元被所述第一极板包围，且所述敏感单元包括敏感元件和将敏感元件连接到所述第一极板的元件连接臂；设置在所述第二极板所在的基底上的锚定支座，其通过悬臂梁连接到所述元件连接臂；其中，每个元件连接臂与相对于其对称的至少两个锚定支座连接。
本发明所述的平板电容器，通过元件连接臂、敏感元件和电容器的第一极板形成的杠杆的作用，可以放大敏感元件的受力，从而使得电容器更容易受到力的影响而产生电容的变化。
【附图说明】
图1是根据本发明所述的一个实施例的平行板电容器1的结构的平面示意图。
图2是图1从a-a’处的平板电容器的侧面示意图。
图3是根据本发明的又一个实施例的平行板电容器2的结构的平面示意图。
【具体实施方式】
现结合附图进一步说明本发明。本领域技术人员可以理解到，以下只是结合具体实施方式对本发明的主旨进行非限制性说明，本发明所主张的范围由所附的权利要求确定，任何不脱离本发明精神的修改、变更都应由本发明的权利要求所涵盖。
图1是根据本发明所述的一个实施例的平行板电容器的结构的平面示意图。所示的平行板电容器包括第一极板10和第二极板（未示出），第一对敏感元件21a、21b和第二对敏感元件22a、22b，用于分别将第一对敏感元件21a、21b连接到第一极板10的元件连接臂23a、23b，用于分别将第二对敏感元件22a、22b连接到第一极板10的元件连接臂24a、24b，设置在第二极板的锚定支座30、31、32和33，将锚定支座30连接到元件连接臂23a的悬臂梁30a，将锚定支座31连接到元件连接臂23a的悬臂梁30b，将锚定支座32连接到元件连接臂24b的悬臂梁31a，将锚定支座32连接到元件连接臂24b的悬臂梁31b，将锚定支座32连接到元件连接臂23b的悬臂梁32a，将锚定支座33连接到元件连接臂23b的悬臂梁32b，将锚定支座33连接到元件连接臂24a的悬臂梁33a，将锚定支座30连接到元件连接臂24a的悬臂梁33b。优选地，各悬臂梁与连接到其的元件连接臂垂直。
敏感元件和元件连接臂构成了敏感单元，它们均设置在第一极板所在的硅基底上。敏感元件例如为质量块。敏感元件和元件连接臂在本例中均由硅材料形成，例如通过在基底上蚀刻从而获得敏感元件和元件连接臂，可以理解，质量块的重量较大。各悬臂梁同样由硅材料形成在第一极板所在的硅基底上，且各悬臂梁要比元件连接臂薄一些。设置在第二极板上的锚定支座从第二极板延伸到第一极板并与相应的悬臂梁固定连接。
根据本发明，各敏感单元中的各对敏感元件的两个元件对称设置在所述导电部的相对侧。图1所示的例子中，共设置了两对敏感元件。第一对敏感元件21a、21b分别设置在第一极板10的两侧，以面对该图正常阅读时的视角看，敏感元件21a设置在第一极板10的左侧，敏感元件21b相对地设置在第一极板10的右侧，元件连接臂23a和元件连接臂23b的长度相同。第二对敏感元件22a、22b分别设置在第一极板10的另外两侧，以面对该图正常阅读时的视角看，敏感元件22a设置在第一极板10的上侧，敏感元件22b则相对地设置在第一极板10的下侧，元件连接臂24a和元件连接臂24b的长度相同。
进一步，上述示例中，各敏感元件为等同的质量块。各质量块通过相应的元件连接臂连接到第一极板10，由此形成了杠杆。也就是说，元件连接臂23a作为杠杆，其一端是敏感元件21a而另一端是第一极板10，同样的情况适用于其他敏感元件和元件连接臂，不再赘述。
图2是图1从a-a’处的平板电容器的侧面示意图。如图所示，第一极板10和第二极板20之间设置有用于支撑杠杆（即元件连接臂）23a和23b的锚定支座30和33（因是从a-a’处的侧视图，因此锚定支座31和32未示出）。质量块21a通过杠杆23a连接到第一极板10，质量块21b通过杠杆23b连接到第二极板10。
该平板电容器1被用作加速度传感器的感测部件后，如果该加速度传感器受到上下方向的加速度，则在惯性作用下，各敏感元件（如各质量块）将感受到该加速度，并对相应的元件连接臂（即各杠杆）施加与加速度方向相反的力。由于根据本发明，悬臂梁的厚度比元件连接臂小，所以悬臂梁受到元件连接臂传来的力后，变形较大，而该变形将促使第一极板10的位移更大，亦即，使得第一极板在与加速度方向相同的方向上发生的位移更大，相应地第一极板和第二极板间的电容改变量较大。由于敏感元件、元件连接臂及第一极板所形成的杠杆结构，使得两极板在相同的加速度下获得了更大的位移，从而使得电容的变化更大，由此包括该平板电容器的加速度传感器更为敏感。
以上示例示意该平板电容器包括两对敏感单元，但本发明并不局限于此。实际应用中，可根据需要设置更多对敏感单元或只设置一对。
图3是根据本发明的又一个实施例的平行板电容器的结构的平面示意图。与图1所示的平行板电容器不同的是，本例中由敏感元件和元件连接臂形成的杠杆、以及连接锚定支座与元件连接臂的悬臂梁形成在第一极板的内侧，也就是说，本例中的敏感单元被第一极板包围，并且本例中敏感元件只包括一个敏感单元。
如图3所示，该电容器包括第一极板40和第二极板（未图示），敏感元件50，用于将敏感元件50连接到第一极板40的元件连接臂50a、50b、50c和50d，设置在第二极板的锚定支座60、61、62和63，将锚定支座60连接到元件连接臂50a的悬臂梁60a，将锚定支座61连接到元件连接臂50a的悬臂梁60b，将锚定支座61连接到元件连接臂50b的悬臂梁61a，将锚定支座62连接到元件连接臂50b的悬臂梁61b，将锚定支座62连接到元件连接臂50c的悬臂梁62a，将锚定支座63连接到元件连接臂50c的悬臂梁62b，将锚定支座63连接到元件连接臂50d的悬臂梁63a，将锚定支座60连接到元件连接臂50d的悬臂梁63b。优选地，各元件连接臂与连接到其的悬臂梁垂直。
敏感元件和元件连接臂构成了敏感单元，它们均设置在第一极板所在的硅基底。敏感元件例如为质量块。敏感元件和元件连接臂在本例中均由硅材料形成，例如通过在基底上蚀刻从而获得敏感元件和元件连接臂，可以理解，质量块的重量较大。各悬臂梁同样由硅材料形成在第一极板所在的硅基底上，且各悬臂梁要比元件连接臂薄些。设置在第二极板上的锚定支座从第二极板延伸到第一极板并与相应的悬臂梁固定连接。
图3所示的例子中，优选相对于敏感元件对称的元件连接臂的长度相同，更优选，各元件连接臂的长度相同。本示例中，敏感元件为等同的质量块，其通过元件连接臂连接到第一极板40，由此形成了基于个元件连接臂的杠杆。也就是说，元件连接臂50a作为杠杆，其一端是敏感元件50而另一端是第一极板40，同样的情况适用于敏感元件50和其他连接臂，不再赘述。
在平板电容器2用作加速度传感器的感测部件后，如果该加速度传感器受到上下方向的加速度，则在惯性作用下，各敏感元件（如各质量块）将感受到该加速度，并对各元件连接臂（即各杠杆）施加与加速度方向相反的力。在这样的情况下，较薄的悬臂梁受到元件连接臂传来的力后，变形较大，而该变形将促使第一极板10在与加速度方向相同的方向上发生位移更大，从而使得第一极板和第二极板间的电容改变量相应更大。由于敏感元件、元件连接臂以及第一极板所形成的杠杆结构，使得两极板在相同的加速度下获得了更大的位移，从而使得电容的变化更大，由此包括该平板电容器的加速度传感器更为敏感。
尽管本发明的上述各示例是以硅材料作为基底进行的说明，但实际应用中也可以是其他材料的基底，如硅化锗等。
此外，为了更好地达成杠杆的作用，各元件连接臂与悬臂梁连接的点更靠近质量块一些。

Claims (5)

  1. 一种平行板电容器，包括第一极板和与第一极板相对设置的第二极板，其特征在于，所述平行板电容器包括：
    在形成所述第一极板的基底上设置的至少一对敏感单元，所述敏感单元包括敏感元件和将敏感元件连接到所述第一极板的元件连接臂；
    设置在所述第二极板所在的基底上的锚定支座，其通过悬臂梁连接到所述元件连接臂；
    其中，每个元件连接臂与相对于其对称的至少两个锚定支座连接。
  2. 如权利要求1所述的平行板电容器，其特征在于，所述敏感元件为质量块，所述元件连接臂和所述悬臂梁均由硅形成，且所述元件连接臂比所述悬臂梁厚。
  3. 一种平行板电容器，包括第一极板和与第一极板相对设置的第二极板，其特征在于，所述平行板电容器包括：
    在形成所述第一极板的基底上设置的至少一个敏感单元，所述敏感单元被所述第一极板包围，且所述敏感单元包括敏感元件和将敏感元件连接到所述第一极板的元件连接臂；
    设置在所述第二极板所在的基底上的锚定支座，其通过悬臂梁连接到所述元件连接臂；
    其中，每个元件连接臂与相对于其对称的至少两个锚定支座连接。
  4. 如权利要求3所述的平行板电容器，其特征在于，所述敏感元件为质量块，所述元件连接臂和所述悬臂梁均由硅形成，且所述元件连接臂比所述悬臂梁厚。
  5. 一种包括如权利要求1－4中任意一项所述的平行板电容器的加速度传感器。
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI126598B (en) * 2014-02-26 2017-03-15 Murata Manufacturing Co Microelectromechanical device with motion limitation devices
JP6585147B2 (ja) * 2017-12-01 2019-10-02 浜松ホトニクス株式会社 アクチュエータ装置
CN112195763B (zh) * 2020-09-29 2021-11-30 湖南中大检测技术集团有限公司 一种桥梁支座及一种桥梁支座的智能监测方法
CN115790910B (zh) * 2021-09-09 2024-07-12 北京航空航天大学 一种压力传感器
CN113933540B (zh) * 2021-11-19 2023-08-04 中国工程物理研究院电子工程研究所 一种机电耦合的电容式加速度传感器
CN114034884A (zh) * 2021-11-19 2022-02-11 中国工程物理研究院电子工程研究所 一种多差分电容式加速度传感器
CN114839398A (zh) * 2022-04-27 2022-08-02 东南大学 一种电容式柔性加速度传感器及其制备方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1529172A (zh) * 2003-10-08 2004-09-15 东南大学 微重力加速度级电容式加速度传感器
US20050132803A1 (en) * 2003-12-23 2005-06-23 Baldwin David J. Low cost integrated MEMS hybrid
CN1752757A (zh) * 2005-09-12 2006-03-29 中北大学 共振隧穿压阻式微加速度计
CN1844933A (zh) * 2006-05-16 2006-10-11 北京航空航天大学 一种扭摆式硅mems角加速度传感器
CN1844934A (zh) * 2006-05-23 2006-10-11 北京航空航天大学 一种双轴电容式微机械加速度计
CN1847857A (zh) * 2005-04-15 2006-10-18 威海双丰电子集团有限公司 一种电容式mems加速度传感器
US20070089519A1 (en) * 2005-08-23 2007-04-26 Georgia Tech Research Corporation High-Q longitudinal block resonators with annexed platforms for mass sensing applications
CN1959417A (zh) * 2006-11-17 2007-05-09 中国科学院上海微系统与信息技术研究所 微机械电容式加速度传感器及制作方法
CN102608356A (zh) * 2011-12-06 2012-07-25 中国计量学院 一种双轴体微机械谐振式加速度计结构及制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB720412A (en) * 1951-04-16 1954-12-22 Oesterr Alpine Montan An improved method of blowing pig iron and other carbon-containing iron baths
GB2310723A (en) * 1996-02-27 1997-09-03 Gec Alsthom Ltd Sensor device using magnetostriction
US6230563B1 (en) * 1998-06-09 2001-05-15 Integrated Micro Instruments, Inc. Dual-mass vibratory rate gyroscope with suppressed translational acceleration response and quadrature-error correction capability
WO2001089986A1 (en) 2000-05-26 2001-11-29 Chaker Khalfaoui A stiction-free electrostatically driven microstructure device
US20020134154A1 (en) * 2001-03-23 2002-09-26 Hsu Ying W. Method and apparatus for on-chip measurement of micro-gyro scale factors
US6928872B2 (en) * 2001-04-27 2005-08-16 Stmicroelectronics S.R.L. Integrated gyroscope of semiconductor material with at least one sensitive axis in the sensor plane
US6955084B2 (en) 2001-08-10 2005-10-18 The Boeing Company Isolated resonator gyroscope with compact flexures
US6966224B2 (en) * 2003-03-06 2005-11-22 Bei Technologies, Inc. Micromachined vibratory gyroscope with electrostatic coupling
GB0720412D0 (en) * 2007-10-18 2007-11-28 Melexis Nv Combined mems accelerometer and gyroscope
CN201444162U (zh) * 2009-06-26 2010-04-28 威海双丰电子集团有限公司 电容式加速度检波器中间可动电极
FI20096365A0 (fi) * 2009-12-18 2009-12-18 Polar Electro Oy Järjestelmä harjoitukseen liittyvän tiedon käsittelemiseksi
EP2707728B1 (en) * 2011-05-09 2016-03-23 Ramot at Tel-Aviv University Ltd. Bistable force and/or acceleration sensor
CN102507980B (zh) * 2011-11-02 2013-11-27 重庆理工大学 一种基于自谐振技术的硅微二维加速度传感器
US20140026659A1 (en) * 2012-07-27 2014-01-30 Biao Zhang Mems device and a method of using the same
US9096420B2 (en) * 2013-03-08 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for MEMS devices with increased sensitivity

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1529172A (zh) * 2003-10-08 2004-09-15 东南大学 微重力加速度级电容式加速度传感器
US20050132803A1 (en) * 2003-12-23 2005-06-23 Baldwin David J. Low cost integrated MEMS hybrid
CN1847857A (zh) * 2005-04-15 2006-10-18 威海双丰电子集团有限公司 一种电容式mems加速度传感器
US20070089519A1 (en) * 2005-08-23 2007-04-26 Georgia Tech Research Corporation High-Q longitudinal block resonators with annexed platforms for mass sensing applications
CN1752757A (zh) * 2005-09-12 2006-03-29 中北大学 共振隧穿压阻式微加速度计
CN1844933A (zh) * 2006-05-16 2006-10-11 北京航空航天大学 一种扭摆式硅mems角加速度传感器
CN1844934A (zh) * 2006-05-23 2006-10-11 北京航空航天大学 一种双轴电容式微机械加速度计
CN1959417A (zh) * 2006-11-17 2007-05-09 中国科学院上海微系统与信息技术研究所 微机械电容式加速度传感器及制作方法
CN102608356A (zh) * 2011-12-06 2012-07-25 中国计量学院 一种双轴体微机械谐振式加速度计结构及制作方法

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