WO2014040445A1 - Led及其封装方法 - Google Patents

Led及其封装方法 Download PDF

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Publication number
WO2014040445A1
WO2014040445A1 PCT/CN2013/078010 CN2013078010W WO2014040445A1 WO 2014040445 A1 WO2014040445 A1 WO 2014040445A1 CN 2013078010 W CN2013078010 W CN 2013078010W WO 2014040445 A1 WO2014040445 A1 WO 2014040445A1
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Prior art keywords
lamp bead
semi
led
ellipse
emitting component
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PCT/CN2013/078010
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English (en)
French (fr)
Inventor
李漫铁
屠孟龙
项其第
刘瀚
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深圳雷曼光电科技股份有限公司
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Priority to US14/895,834 priority Critical patent/US9711690B2/en
Publication of WO2014040445A1 publication Critical patent/WO2014040445A1/zh

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00—Refractors for light sources
    • F21V5/04—Refractors for light sources of lens shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V5/00—Refractors for light sources
    • F21V5/08—Refractors for light sources producing an asymmetric light distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to a display device, and more particularly to an LED and a method of packaging the same.
  • the LED display is usually mounted perpendicular to the horizontal plane to form an LED display screen, so the highest brightness point of the LED display is in the normal direction, and the half power view of the LED is symmetrical.
  • the half power angle is also called the power angle, that is, the normal direction of the center of the light source is spread around, and the angle between the center light intensity I and the surrounding I/2.
  • the angles of the surrounding light beams deflected toward the normal line should be equal when they are half of the original.
  • the angles are not equal.
  • the angle at which the diode emits light is also the angle at which it is scattered.
  • the display screen will be installed at a certain height, and people's viewing angle is upward.
  • the visual range of the LED display is reduced.
  • the LED is biased downward by a certain angle to increase the angle of view of the lower half of the LED, that is, the angle at which the light is deflected downward.
  • This method is a mold that requires re-customizing the LED display, which is expensive to manufacture and has poor versatility.
  • An LED that includes:
  • a lamp bead covering the light emitting component, wherein an axial cross section of the lamp bead is an asymmetrical pattern with a projection of a normal line of the light emitting component on a cross section of the lamp bead;
  • the axial cross section of the bottom end of the lamp bead is a symmetrical pattern with a projection of a normal line of the light emitting component on an axial cross section of a bottom end of the lamp bead, the light emitting component being located at the lamp The center of symmetry at the bottom end of the bead.
  • the asymmetric pattern includes a first semi-ellipse and a second semi-ellipse, and the first semi-elliptic curve of the first semi-ellipse is connected end to end with the second semi-elliptic curve of the second semi-ellipse
  • the first semi-elliptic curve is different from the curvature of the second semi-elliptical curve, and an intersection of the first semi-ellipse and the second semi-ellipse intersects a normal of the light-emitting component.
  • the major axis of the first semi-ellipse is equal to the major axis of the second semi-ellipse, and the minor axis of the first semi-ellipse is smaller than the minor axis of the second semi-ellipse.
  • the outer surface of the lamp bead includes a first illuminating curved surface and a second illuminating curved surface, and an outer surface of the lamp bead corresponding to the first semi-ellipse is a first illuminating curved surface, the first The outer surface of the lamp bead corresponding to the two-half ellipse is a second illuminating curved surface, and a ratio of a half-power angle of the first illuminating curved surface to the second illuminating curved surface is 1:1.5-5.
  • the symmetrical pattern is elliptical.
  • the outer surface of the lamp bead includes four curved surfaces, and the four curved surfaces are connected to each other.
  • two adjacent curved surfaces are tangentially connected.
  • the light emitting assembly includes a bracket and a chip, and the chip is disposed on the bracket.
  • the bracket is located in the middle of the bottom end of the lamp bead.
  • the invention also provides an LED packaging method.
  • An LED packaging method comprising:
  • the bonding wire and the two ends of the gold wire are respectively soldered on the chip and the bracket;
  • the axial cross section of the injection cavity of the mold along the axial direction thereof is an asymmetrical pattern, and the opening of the injection cavity
  • the axial cross section is a symmetrical figure
  • the axial cross section of the lamp bead is an asymmetrical pattern, and the axial cross section of the lamp bead is asymmetrically projected by the normal line of the illumination component on the axial cross section of the lamp bead.
  • the outer surface curve is asymmetric with respect to the normal of the light-emitting component, that is, the lamp bead is asymmetrical, and the spot formed by the lamp bead is an asymmetrical spot.
  • the axial cross section of the bottom end of the lamp bead is a symmetrical pattern, and the axial cross section of the bottom end of the lamp bead is symmetrically projected by the projection of the normal of the light emitting component on the axial cross section of the bottom end of the lamp bead.
  • the lighting assembly is therefore located at the center of symmetry of the bottom end of the lamp bead. Since the lamp bead is asymmetric in polarization, after the lamp bead is solidified, the distribution of stress in the lamp bead is not uniform. However, the design of the bottom end of the lamp bead is symmetrical, so that the internal stress distribution of the lamp bead is relatively uniform, preventing the injected colloid from flowing against the illuminating component during the molding process of the lamp bead, affecting the shape and components of the illuminating component. The connection between the situation destroys the quality of the LED.
  • the ratio of the half power angle of the first illuminating surface to the second illuminating surface is 1:1.5 ⁇ 5, which expands the visible range of the LED.
  • the chip is disposed in the cup of the negative electrode pin, so that the second illuminating curved surface with a larger half power angle forms a lower half power angle, and the lower half power angle of the LED is increased, which can better satisfy people's upward observation. Claim.
  • the light-emitting component is located at the middle of the bottom end of the lamp bead. Since the axial cross-section of the bottom end of the lamp bead is a symmetrical figure, the light-emitting component is in the middle of the bottom end of the lamp bead, and the colloid about the periphery of the light-emitting component is related to the light-emitting component. symmetry. Therefore, the force of the illuminating component is uniform and the stability is high, and the illuminating component and the lamp bead are prevented from being detached by the lamp bead under the action of heat or external force, thereby affecting the use of the LED.
  • 1 is a cross-sectional view of an LED of an embodiment
  • Figure 2 is a schematic view of the cross section of the lamp bead of Figure 1 in an axial direction perpendicular to its axial direction;
  • Figure 3 is a bottom plan view of the LED shown in Figure 1;
  • FIG. 4 is a schematic view of a half frequency view of the LED shown in FIG. 1;
  • Figure 5 is a vertical polarization simulation curve of the LED shown in Figure 1;
  • Figure 6 is a perspective view of the lamp bead of the LED shown in Figure 1;
  • FIG. 7 is a flow chart of an LED packaging method according to an embodiment.
  • an LED 100 of the present embodiment includes a light emitting component 110 and a lamp bead 120 .
  • the light emitting assembly 110 includes a bracket 111, a solid crystal primer 114, a chip 115, and a gold wire 117.
  • the bracket 111 includes a positive electrode pin 112 and a negative electrode pin 113.
  • the positive electrode pin 112 or the negative electrode pin 113 is provided with a cup (not shown), and the chip 115 is received in the cup.
  • the bracket 111 is located at the center of the bottom end of the lamp bead 120.
  • the chip 115 is attached to the die attach primer 114. Both ends of the gold wire 117 are electrically connected to the positive electrode pin 112 and the chip 115, respectively.
  • the lamp bead 120 encloses the light-emitting component 110.
  • the axial cross-section of the lamp bead 120 is asymmetrical with the projection of the normal of the light-emitting component 110 on the axial cross section of the lamp bead 120, and the axis of the bottom end of the lamp bead 120
  • the cross section of the light is symmetrical with the projection of the normal of the light emitting component 110 on the axial cross section of the bottom end of the lamp bead 120, and the light emitting component 110 is located at the center of symmetry of the bottom end of the lamp bead 120.
  • the asymmetric graph includes two semi-ellipses with different curvatures. Symmetrical figures are elliptical.
  • the axial cross section of the lamp bead 120 is a half ellipse of different curvatures. The bead 120 is then asymmetrical with respect to the center normal of the bead 120.
  • the asymmetric pattern includes a first semi-ellipse 121 and a second semi-ellipse 122.
  • the first semi-elliptic curve of the first semi-ellipse 121 is connected to the second semi-elliptic curve of the second semi-ellipse 122.
  • the half elliptic curve is different from the arc of the second semi-elliptical curve, and the intersection of the first semi-ellipse 121 and the second semi-ellipse 122 intersects the normal of the light-emitting assembly 110.
  • the major axis of the first half ellipse 121 is equal to the long axis of the second semi-ellipse 122.
  • the minor axis of the first half ellipse 121 is smaller than the minor axis of the second half ellipse 122.
  • the outer surface of the lamp bead 120 includes a first illuminating curved surface 123 and a second illuminating curved surface 124.
  • the outer surface of the lamp bead 120 corresponding to the first half ellipse 121 is the first illuminating curved surface 123
  • the outer surface of the lamp bead 120 corresponding to the second semi-elliptical shape is the second illuminating curved surface 124.
  • the curvature of the first half ellipse 121 is small, and the curvature of the second half ellipse 122 is large.
  • the common long axis of the first half ellipse 121 and the second half ellipse 122 and the axial cross section of the center line of the lamp bead 120 are asymmetrical.
  • the curvature of the first illuminating curved surface 123 corresponding to the first semi-ellipse 121 is small, and the curvature of the second illuminating curved surface 124 corresponding to the second semi-elliptical 122 is large.
  • the half power angles corresponding to the first illuminating curved surface 123 and the second illuminating curved surface 124 are also different.
  • the curvatures of the first semi-ellipse 121 and the second semi-ellipse 122 are different, the curvatures of the first illuminating curved surface 123 and the second illuminating curved surface 124 are also different.
  • the optical principle when the light is irradiated on the interface of different curvatures, the angle of deflection of the light is different after the light is refracted.
  • the curvature of the first illuminating surface 123 is small, and the ray is deflected after passing through the first illuminating surface 123 .
  • the half power angle ⁇ corresponding to the first illuminating surface 123 is small.
  • the ray is deflected after passing through the second illuminating curved surface 124, and the half power angle ⁇ corresponding to the second illuminating curved surface 124 is large.
  • the ratio of the half power angles of the first illuminating curved surface 123 and the second illuminating curved surface 124 may be 1:1.5-5 according to the different design of the curvature of the first illuminating curved surface 123 and the second illuminating curved surface 124.
  • the second illuminating curved surface 124 is disposed close to the ground, and the first illuminating curved surface 123 is away from the ground. Therefore, the second illuminating curved surface 124 having a larger half power angle forms a downward deflection of the light to form a lower half power angle, that is, a half power angle ⁇ is led The lower half power angle of 100.
  • FIG. 5 is a vertical polarization simulation curve diagram of the LED 100 provided by the present invention. According to Figure 5, we can see the LED The light pattern on both sides of the normal line of 100 is asymmetrical.
  • the surface of the lamp bead 120 includes four curved surfaces 125, and the four curved surfaces 125 are connected to each other to form a surface of the lamp bead 120. Specifically, in the present embodiment, between the four curved surfaces 125, the adjacent two curved surfaces 125 are tangentially connected. The tangential connection between the adjacent two cutting faces 125 ensures that the surface of the lamp bead 120 is smooth.
  • the lamp bead 120 is an epoxy lamp bead.
  • An LED display screen of an embodiment includes a plurality of LED dot matrix modules spliced together, the LED dot matrix module includes a plurality of pixel points, and the pixel points include a plurality of LEDs 100.
  • a plurality of LEDs 100 are arranged to form one pixel, and a plurality of LEDs The side of the 100 having a larger half power angle is placed close to the ground so that an observer on the ground can view the LED display over a larger viewing angle range. led
  • the color of 100 can be red, green and blue.
  • Each pixel includes an array of red, green, and blue LEDs 100. Since the LED 100 can increase the visible range, the above LED
  • the LED display frame of 100 makes the LED display screen also have a large visual range, which can better meet the requirements of people looking up and watching.
  • an LED packaging method 200 is also provided.
  • An LED packaging method 200 includes:
  • Step S210 solid crystal, fixing the chip on the bracket
  • Step S220 the two ends of the bonding wire and the gold wire are respectively soldered on the chip and the bracket;
  • Step S230 filling the glue, placing the chip and the bracket in the mold, filling the mold with the glue, and the cross-section of the injection cavity of the mold in the axial direction perpendicular to the axial direction thereof is an asymmetrical pattern, the note The axial cross section at the opening of the glue chamber is a symmetrical pattern;
  • Step S240 curing, and the glue is solidified to form an LED.
  • the cross section of the lamp bead in the axial direction perpendicular to the axial direction thereof is an asymmetrical pattern
  • the outer surface curve of the lamp bead 120 is asymmetrical with respect to the center normal of the lamp bead 120. That is, the lamp bead 120 is polarized asymmetric, and the spot formed by the lamp bead 120 is an asymmetrical spot.
  • the bottom end of the lamp bead 120 is symmetrical in cross section along an axial direction perpendicular to its direction.
  • the lamp bead 120 is asymmetric in polarization, after the lamp bead 120 is cured and formed, the distribution of stress in the lamp bead 120 is uneven, resulting in impact of the light-emitting component, affecting the shape and conduction of the light-emitting component.
  • the bottom end of the lamp bead 120 is designed to have a symmetrical structure, the internal stress distribution of the lamp bead 120 can be made uniform. Therefore, in the above LED In 100, the spot illuminated by the lamp bead 120 can be asymmetrical, and the LED is satisfied.
  • the light-emitting component is located at the middle of the bottom end of the lamp bead 120. Since the axial cross-section of the bottom end of the lamp bead 120 is a symmetrical figure, the light-emitting component is a middle portion with the bottom end of the lamp bead 120, and the colloid is located around the light-emitting component. Symmetric about the illuminating component. Therefore, the force of the light-emitting component is uniform and the stability is high, and the light-emitting component and the lamp bead are prevented from being detached by the lamp bead under the action of heat or external force, thereby affecting the LED. Use of 100.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)

Abstract

提供了一种LED发光组件及灯珠，以及一种LED封装方法。灯珠包覆发光组件，灯珠的轴向的横截面以发光组件的法线于灯珠的轴向的横截面上的投影为不对称图形；灯珠的底端的轴向的横截面以发光组件的法线于灯珠的底端的轴向的横截面上的投影为对称图形，发光组件位于灯珠的底端的对称中心处。由此可以扩大其视角范围，还可以保证发光组件的四周的受力均匀，防止灯珠在受热或外力作用下造成发光组件和灯珠脱离，影响LED的使用。

Description

LED及其封装方法
【技术领域】
本发明涉及一种显示装置，特别是涉及一种LED及其封装方法。
【背景技术】
LED显示屏通常是垂直于水平面安装，形成一个LED显示屏幕，因此LED显示屏的最高亮度点是在法线方向，则LED的半功率视角是对称的。半功率角度又称功率角度，即就是光源中心的法线方向向四周张开，中心光强I到周围的I/2之间的夹角。当光源的光强均匀时，向法线偏转的周围光强是原来一半时所夹的角应当相等。当光强不均匀时，夹角不相等。二极管发光角度也就是其光线散射角度。并且，显示屏会安装在一定的高度上，人们的观看视角为仰视。由于观看屏幕需要仰视，则LED显示屏的可视范围缩小。为了满足人们仰视观看的要求，在LED在插件安装的过程中，通过工装治具，使得LED向下偏一定的角度，以增大LED的下半功率视角，即光线向下偏折的角度。这种方法是需要重新定制LED显示屏的模具，制造成本较高，并且通用性较差。
【发明内容】
基于此，有必要提供一种能够使可视范围增大的LED。
一种LED，包括：
发光组件；
发光组件；
灯珠，包覆所述发光组件，所述灯珠的轴向的横截面以所述发光组件的法线于所述灯珠的轴向的横截面上的投影为不对称图形；
其中，所述灯珠的底端的轴向的横截面以所述发光组件的法线于所述灯珠的底端的轴向的横截面上的投影为对称图形，所述发光组件位于所述灯珠的底端的对称中心处。
在其中一实施方式中，所述不对称图形包括第一半椭圆及第二半椭圆，所述第一半椭圆的第一半椭圆曲线与所述第二半椭圆的第二半椭圆曲线首尾连接，所述第一半椭圆曲线与所述第二半椭圆曲线的弧度不同，所述第一半椭圆与所述第二半椭圆的交线与所述发光组件的法线相交。
在其中一实施方式中，所述第一半椭圆的长轴与所述第二半椭圆的长轴相等，所述第一半椭圆的短轴比所述第二半椭圆的短轴小。
在其中一实施方式中，所述灯珠的外表面包括第一发光曲面及第二发光曲面，所述第一半椭圆所对应的所述灯珠的外表面为第一发光曲面，所述第二半椭圆所对应的所述灯珠的外表面为第二发光曲面，所述第一发光曲面与所述第二发光曲面的半功率角度之比为1：1.5~5。
在其中一实施方式中，所述对称图形为椭圆形。
在其中一实施方式中，所述灯珠的外表面包括四个曲面，四个所述曲面相互连接。
在其中一实施方式中，所述四个曲面之间，相邻的两个所述曲面相切连接。
在其中一实施方式中，所述发光组件包括支架及芯片，所述芯片设于所述支架上。
在其中一实施方式中，所述支架位于所述灯珠的底端的中部。
本发明还提供一种LED封装方法。
一种LED封装方法，包括：
固晶，将芯片固定在支架上；
焊线，金线的两端分别焊接在芯片和支架上；
灌胶，将芯片与支架放置在模具中，对模具注满胶液，所述模具的注胶腔沿其轴向方向的轴向的横截面为不对称图形，所述注胶腔开口处的轴向的横截面为对称图形；
固化，胶液固化，形成LED。
利用LED封装方法封装的LED，与传统的LED相比，至少具有以下优点：
首先，灯珠的轴向的横截面为不对称图形，灯珠的轴向的横截面以发光组件的法线于灯珠的轴向的横截面上的投影为不对称图形，则灯珠的外表面曲线关于发光组件的法线不对称，即灯珠为偏光不对称，则灯珠形成的光斑为不对称光斑。并且，灯珠的底端的轴向的横截面为对称图形，灯珠的底端的轴向的横截面以发光组件的法线于灯珠的底端的轴向的横截面上的投影为对称图形，因此发光组件位于灯珠的底端的对称中心处。由于灯珠为偏光不对称，在灯珠固化成型后，则灯珠内应力的分布是不均匀的。但是将灯珠的底端设计成对称结构，则能够使灯珠的内部应力分布较为均匀，防止在灯珠的成型过程中，防止注入的胶体流动冲击发光组件，影响发光组件的形态及各元件之间的连接情况，破坏LED的质量。
第一发光曲面与第二发光曲面的半功率角度之比为1：1.5~5，扩大了LED的可视范围。并且，将芯片设于负极引脚的碗杯内，可以使半功率角度较大的第二发光曲面形成下半功率角度，增大上述LED下半功率角度，能够更好的满足人们仰视观察的要求。
并且，发光组件位于灯珠的底端的中部，由于灯珠的底端的轴向的横截面为对称图形，则发光组件为与灯珠的底端的中部，则位于发光组件的四周的胶体关于发光组件对称。因此，发光组件的受力均匀，稳固性较高，防止灯珠在受热或外力作用下造成发光组件和灯珠脱离，影响LED的使用。
【附图说明】
图1为一实施方式的LED的剖视图；
图2为图1所示灯珠沿垂直于其轴向方向的轴向的横截面的示意图；
图3为图1所示的LED的仰视图；
图4为图1所示的LED的半频率视角的示意图；
图5为图1所示的LED的垂直偏光模拟曲线图；
图6为图1所示的LED的灯珠的立体图；
图7为一实施方式的LED封装方法的流程图。
【具体实施方式】
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施方式。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施方式。相反地，提供这些实施方式的目的是使对本发明的公开内容理解的更加透彻全面。
需要说明的是，当元件被称为“固定于”另一个元件，它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“连接”另一个元件，它可以是直接连接到另一个元件或者可能同时存在居中元件。本文所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的，并不表示是唯一的实施方式。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本发明。本文所使用的术语“及／或”包括一个或多个相关的所列项目的任意的和所有的组合。
请参阅图1，本实施方式的一种LED 100包括发光组件110及灯珠120。
发光组件110包括支架111、固晶底胶114、芯片115及金线117。支架111包括正极引脚112及负极引脚113，正极引脚112或负极引脚113设有碗杯（图未标），芯片115收容于碗杯内。支架111位于灯珠120的底端的中部。
芯片115固定在固晶底胶114上。金线117的两端分别与正极引脚112与芯片115电连接。
灯珠120包覆发光组件110，灯珠120的轴向的横截面以发光组件110的法线于灯珠120的轴向的横截面上的投影为不对称图形，灯珠120的底端的轴向的横截面以发光组件110的法线于灯珠120的底端的轴向的横截面上的投影为对称图形，发光组件110位于灯珠120的底端的对称中心处。
具体在本实施方式中，请参阅图2及图3，不对称图形包括两个弧度不同的半椭圆。对称图形为椭圆形。灯珠120的轴向的横截面为两个弧度不同的半椭圆。则灯珠120相对于灯珠120的中心法线不对称。
具体在本实施方式中，不对称图形包括第一半椭圆121及第二半椭圆122，第一半椭圆121的第一半椭圆曲线与第二半椭圆122的第二半椭圆曲线首尾连接，第一半椭圆曲线与第二半椭圆曲线的弧度不同，第一半椭圆121与第二半椭圆122的交线与发光组件110的法线相交。第一半椭圆121的长轴与第二半椭圆122的长轴相等。第一半椭圆121的短轴比第二半椭圆122的短轴小。请同时参阅图1，灯珠120的外表面包括第一发光曲面123及第二发光曲面124。第一半椭圆121所对应的灯珠120的外表面为第一发光曲面123，第二半椭圆所对应的灯珠120的外表面为第二发光曲面124。则第一半椭圆121的弧度较小，第二半椭圆122的弧度较大。第一半椭圆121、第二半椭圆122的共同长轴与灯珠120的中心法线所在的轴向的横截面为不对称图形。并且，第一半椭圆121所对应的第一发光曲面123的弧度较小，第二半椭圆122所对应的第二发光曲面124的弧度较大。由于第一发光曲面123与第二发光曲面124的弧度不同，则第一发光曲面123与第二发光曲面124所对应的半功率角度也不相同。
由于第一半椭圆121与第二半椭圆122的弧度不同，则第一发光曲面123与第二发光曲面124的弧度也不同。根据光学原理，当光线照射在不同弧度的界面上时，则光线通过折射之后，光线发生的偏折角度也不相同。请参阅图1，根据折射定律，第一发光曲面123的弧度较小，则光线经过第一发光曲面123后发生偏折。请同时参阅图4，第一发光曲面123所对应的半功率角度α较小。第二发光曲面124的弧度较大，则光线经过第二发光曲面124后发生偏折，则第二发光曲面124所对应的半功率角度β较大。根据第一发光曲面123与第二发光曲面124的弧度的不同设计，第一发光曲面123与第二发光曲面124的半功率角度之比可以为1：1.5~5。将第二发光曲面124靠近地面设置，则第一发光曲面123远离地面，因此，半功率角度较大的第二发光曲面124形成光线向下偏折形成下半功率角度，即半功率角度β为LED 100的下半功率角度。
当第二发光曲面124的半功率角度β较大的时候，即增大上述LED 100下半功率角度，则可以增大LED 100的可视范围，能够较好的满足人们仰视观看的要求。请参阅图5，图5为本发明所提供的LED 100的垂直偏光模拟曲线图。根据图5，可以看出LED 100的法线两侧的光型不对称。
请参阅图6，灯珠120的表面包括四个曲面125，四个曲面125相互连接构成灯珠120的表面。具体在本实施方式中，四个曲面125之间，相邻的两个曲面125相切连接。相邻的两个切面125之间相切连接，可以保证灯珠120的表面光滑。
具体在本实施方式中，灯珠120为环氧树脂灯珠。
一实施方式的LED显示屏包括多个相互拼接的LED点阵模块，LED点阵模块包括多个像素点，像素点包括多个LED 100。多个LED 100排列构成一个像素点，并且多个LED 100的具有较大半功率角度的一侧靠近地面设置，以使位于地面上的观察人员可以在较大的视角范围内观看到LED显示屏。LED 100的颜色可以为红色、绿色及蓝色。每个像素点包括红色、绿色及蓝色的LED 100排列组成。由于LED 100能够增大可视范围，则由上述LED 100构成的LED显示屏，使LED显示屏也具有较大的可视范围，能够更好的满足人们仰视观察的要求。
请参阅图7，还提供一种LED封装方法200。
一种LED封装方法200包括：
步骤S210，固晶，将芯片固定在支架上；
步骤S220，焊线，金线的两端分别焊接在芯片和支架上；
步骤S230，灌胶，将芯片与支架放置在模具中，对模具注满胶液，所述模具的注胶腔沿垂直于其轴向方向的轴向的横截面为不对称图形，所述注胶腔开口处的轴向的横截面为对称图形；
步骤S240，固化，胶液固化，形成LED。
在利用上述LED封装方法制作的LED中，灯珠沿垂直于其轴向方向的轴向的横截面为不对称图形，则灯珠120的外表面曲线相对于灯珠120的中心法线不对称，即灯珠120为偏光不对称，则灯珠120形成的光斑为不对称光斑。并且，灯珠120的底端沿沿垂直于其方向的轴向的横截面为对称图形。由于灯珠120为偏光不对称，在灯珠120固化成型后，则灯珠120内应力的分布是不均匀的，导致发光组件的受到冲击，影响发光组件的形态及导通情况。但是将灯珠120的底端设计成对称结构，则能够使灯珠120的内部应力分布较为均匀。因此，在上述LED 100中，即可以实现灯珠120照射的光斑为不对称性，满足LED 100在日常使用中的半功率角度要求，并且还能够防止在灯珠120的成型过程中，防止注入的胶体流动冲击发光组件，影响发光组件的形态及各元件之间的连接情况，破坏LED 100的质量。
并且，发光组件位于灯珠120的底端的中部，由于灯珠120的底端的轴向的横截面为对称图形，则发光组件为与灯珠120的底端的中部，则位于发光组件的四周的胶体关于发光组件对称。因此，发光组件的受力均匀，稳固性较高，防止灯珠在受热或外力作用下造成发光组件和灯珠脱离，影响LED 100的使用。
以上所述实施方式仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种LED，其特征在于，包括：
    发光组件；
    灯珠，包覆所述发光组件，所述灯珠的轴向的横截面以所述发光组件的法线于所述灯珠的轴向的横截面上的投影为不对称图形；
    其中，所述灯珠的底端的轴向的横截面以所述发光组件的法线于所述灯珠的底端的轴向的横截面上的投影为对称图形，所述发光组件位于所述灯珠的底端的对称中心处。
  2. 根据权利要求1所述的LED，其特征在于，所述不对称图形包括第一半椭圆及第二半椭圆，所述第一半椭圆的第一半椭圆曲线与所述第二半椭圆的第二半椭圆曲线首尾连接，所述第一半椭圆曲线与所述第二半椭圆曲线的弧度不同，所述第一半椭圆与所述第二半椭圆的交线与所述发光组件的法线相交。
  3. 根据权利要求2所述的LED，其特征在于，所述第一半椭圆的长轴与所述第二半椭圆的长轴相等，所述第一半椭圆的短轴比所述第二半椭圆的短轴小。
  4. 根据权利要求3所述的LED，其特征在于，所述灯珠的外表面包括第一发光曲面及第二发光曲面，所述第一半椭圆所对应的所述灯珠的外表面为第一发光曲面，所述第二半椭圆所对应的所述灯珠的外表面为第二发光曲面，所述第一发光曲面与所述第二发光曲面的半功率角度之比为1：1.5~5。
  5. 根据权利要求1所述的LED，其特征在于，所述对称图形为椭圆形。
  6. 根据权利要求1所述的LED，其特征在于，所述灯珠的外表面包括四个曲面，四个所述曲面相互连接。
  7. 根据权利要求6所述的LED，其特征在于，所述四个曲面之间，相邻的两个所述曲面相切连接。
  8. 根据权利要求1所述的LED，其特征在于，所述发光组件包括支架及芯片，所述芯片设于所述支架上。
  9. 根据权利要求8所述的LED，其特征在于，所述支架位于所述灯珠的底端的中部。
  10. 一种LED封装方法，包括：
    固晶，将芯片固定在支架上；
    焊线，金线的两端分别焊接在芯片和支架上；
    灌胶，将芯片与支架放置在模具中，对模具注满胶液，所述模具的注胶腔沿其轴向方向的轴向的横截面为不对称图形，所述注胶腔开口处的轴向的横截面为对称图形；
    固化，胶液固化，形成LED。
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