WO2014036736A1 - 一种大尺寸显示屏及其制造方法 - Google Patents

一种大尺寸显示屏及其制造方法 Download PDF

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Publication number
WO2014036736A1
WO2014036736A1 PCT/CN2012/081186 CN2012081186W WO2014036736A1 WO 2014036736 A1 WO2014036736 A1 WO 2014036736A1 CN 2012081186 W CN2012081186 W CN 2012081186W WO 2014036736 A1 WO2014036736 A1 WO 2014036736A1
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WIPO (PCT)
Prior art keywords
thin film
film transistor
substrate
display screen
transistor substrate
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Ceased
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PCT/CN2012/081186
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English (en)
French (fr)
Inventor
余晓军
魏鹏
刘自鸿
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Priority to CN201280001478.5A priority Critical patent/CN103797531A/zh
Priority to PCT/CN2012/081186 priority patent/WO2014036736A1/zh
Publication of WO2014036736A1 publication Critical patent/WO2014036736A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13336—Combining plural substrates to produce large-area displays, e.g. tiled displays

Definitions

  • the invention belongs to the technical field of display, and in particular relates to a large-sized display screen and a manufacturing method thereof.
  • TFT-LCD thin film transistor liquid crystal display
  • AMOLED active drive organic electroluminescence
  • the yield of the size TFT array makes the size of the display screen difficult to enlarge, the yield of the display screen decreases exponentially with respect to size, and the material and operating costs increase due to the increase in equipment cost and low yield of the TFT array, resulting in manufacturing The cost increases exponentially with respect to display size. Therefore, low-cost, high-yield large-screen displays are still difficult to achieve, thus affecting the development and application of high-performance, large-screen display technology in conference rooms, home theater, outdoor advertising and other fields.
  • the prior art mostly adopts the multi-screen splicing technology, which mainly includes two types: the first one, directly splicing multiple display screens of the ultra-narrow bezel, which is common in the display wall, but due to the display frame The existence of the "seamless" splicing can not be realized, the smallest splicing gap of the large-size LCD screen is still greater than 5 Mm; the second, directly splicing the unpackaged liquid crystal display unit, and then uniformly encapsulating the front and support plates, but the size of the display is limited by the limitation of the liquid crystal panel sealant, and still cannot be seamlessly spliced. Moreover, the splicing method requires grinding the splicing surface of the liquid crystal panel, which is technically difficult and has high production cost.
  • the prior art uses an optical lens array to enlarge an image to a framing screen frame area for seamless display, and the large use and precise alignment of the optical lens increases the manufacturing cost of the display screen. Moreover, the alignment of the optical lens necessarily has an error, which inevitably reduces the yield rate, makes the preparation process of the large-sized display device more complicated, and has low production efficiency and higher cost.
  • the object of the present invention is to provide a large-sized display screen, which aims to solve the problem that the large-size display screen has large splicing gaps, high manufacturing cost, low production efficiency and low yield.
  • a large-sized display screen includes a display front panel and a thin film transistor substrate stacked on each other, and a support plate is disposed on a side of the thin film transistor substrate facing away from the display front panel,
  • the thin film transistor substrate is formed by splicing a plurality of thin film transistor substrate units and carried and fixed by the support plate.
  • Another object of the present invention is to provide a method of manufacturing a large-sized display screen comprising the following steps:
  • the display front panel and the support plate with the thin film transistor substrate are assembled into a display screen.
  • Another object of the present invention is to provide a method of manufacturing a large-sized liquid crystal display comprising the following steps:
  • It is still another object of the present invention to provide a method for fabricating large-sized active-driven organic electroluminescence ( The AMOLED) display method includes the following steps:
  • the drive circuit is assembled to obtain an active drive organic electroluminescent display.
  • the drive circuit is assembled to obtain an active drive organic electroluminescent display.
  • the thin-film transistor substrate used in the large-size display screen provided by the invention is formed by splicing a plurality of thin film transistor substrate units, and the display front plate and the support plate of the single structure (non-splicing structure) are not directly assembled and assembled as in the conventional method.
  • the display screen can avoid the splicing gap caused by the display frame border or the adhesive glue and the sealant when directly splicing the display screen; and the high-quality thin film transistor substrate has a high yield rate, so that the directly spliced large-size thin film transistor substrate
  • the yield rate is much higher than that of directly manufacturing a single-chip thin-film transistor substrate, so that the present invention can improve the production efficiency of a large-sized display screen and greatly reduce the cost; and, in addition, the conventional structure that uses various optical systems to eliminate the splicing gap. In comparison, the cost is saved, the influence of the lens alignment accuracy on the display effect is avoided, and the yield rate of the large-size splicing screen is improved.
  • the seamless splicing can be realized, on the other hand, the production efficiency and the yield rate can be improved, and the cost is saved, which is suitable for mass production of large-size display screens. .
  • Figure 1 is a cross-sectional view of a large-sized display screen provided by the present invention.
  • FIG. 2 is a flow chart showing the manufacture of a large-sized display screen provided by the present invention.
  • FIG. 3 is a schematic structural view of a large-size display manufacturing process in accordance with FIG. 2;
  • FIG. 4 is a cross-sectional view of a large-size liquid crystal display panel according to a first embodiment of the present invention
  • FIG. 5 is a flow chart of manufacturing a large-size liquid crystal display panel according to a first embodiment of the present invention
  • FIG. 6 is a cross-sectional view of a large-size AMOLED display screen according to a second embodiment of the present invention.
  • FIG. 7 is a flow chart showing the manufacture of a large-size AMOLED display screen according to a second embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of a large-size AMOLED display screen according to a third embodiment of the present invention.
  • FIG. 9 is a flow chart showing the manufacture of a large-size AMOLED display screen according to a third embodiment of the present invention.
  • the large-size display screen mainly includes a display front panel 1 and a thin film transistor substrate 2 stacked on each other, and a support panel 3 is disposed on a side of the thin film transistor substrate 2 facing away from the display front panel 1 , wherein
  • the thin film transistor substrate 2 is formed by splicing a plurality of thin film transistor substrate units 21 and carried and fixed by the support plate 3.
  • the display front panel 1 in the large-sized display screen may have various types such as liquid crystal display, organic electroluminescence (OLED) display, and the like.
  • the light-emitting control unit 11 and a transparent front panel 12 are required, and the light-emitting control unit 11 may include a filter 111 (the liquid crystal display must be configured with a filter, and the OLED display may be based on Actually, it is necessary to configure or not to configure a filter for color and intensity distribution of the light emitted from the light-emitting control unit 11 to output an image.
  • the filter 111 is attached to the surface of the transparent front plate 12.
  • the filter 111 can be generally made large in size without splicing, but the filter 111 can also be spliced by a plurality of filter units as in the case of the thin film transistor substrate 2 as necessary.
  • the thin film transistor substrate 2 is a spliced structure, and other components such as the display front plate 1, the support plate 3, and the like are non-spliced structures, that is, a single structure.
  • other components such as the display front plate 1, the support plate 3, and the like are non-spliced structures, that is, a single structure.
  • a plurality of small-sized thin film transistor substrate units 21 are directly spliced into a thin film transistor substrate 2 of a desired size, and the display front panel 1 and the support panel 3 of a single structure are disposed, instead of directly splicing a complete display screen as in the conventional method.
  • the splicing gap generated by the display frame or the adhesive and the sealant can be effectively avoided when directly splicing the display screen; and the yield of the small-sized thin film transistor substrate is high, so that the large-sized thin film transistor substrate directly spliced has a good yield It is higher than directly manufacturing a single-chip thin-film transistor substrate, so that the invention can improve the production efficiency of a large-sized display screen and greatly reduce the cost; in addition, compared with the conventional structure using various optical systems to eliminate the splicing gap, the saving The cost avoids the influence of the lens alignment accuracy on the display effect, and improves the yield of the large-size splicing screen.
  • the large size display can be manufactured by the following method, as shown in Figures 2 and 3:
  • step S001 a substrate 211 is selected, and a plurality of thin film transistor arrays 212 are prepared on the substrate 211; as shown in the diagram (A) in FIG.
  • the thin film transistor array 212 of the corresponding size is prepared according to the size of the pre-spliced thin film transistor substrate unit 21, and the plurality of thin film transistor arrays 212 are independently attached to the substrate 211.
  • step S002 the substrate 211 is cut, and the dicing lines are aligned with the edges of the thin film transistor array 212 to be spliced, and a plurality of thin film transistor substrate units 21 each having a thin film transistor array 212 are obtained; as shown in FIG. B).
  • the substrate 211 is cut along the edge of the thin film transistor array 212 to be spliced by the dicing apparatus, and each of the obtained thin film transistor substrate units 21 is provided with a thin film transistor array 212.
  • the cutting device can select a laser cutting machine, and the laser cutting method can achieve the cutting precision of the order of micrometers without polishing, and the high-precision cutting surface will become the subsequent mosaic surface.
  • a support plate 3 is selected, and a plurality of thin film transistor substrate units 21 are spliced to each other along the cutting surface thereof on the support plate 3 to form a thin film transistor substrate 2; as shown in the diagram (C) in FIG.
  • the plurality of thin film transistor substrate units 21 can be spliced according to the actual required size, and the size of the spliced thin film transistor substrate 2 can meet the needs of a large-sized display screen.
  • step S004 the display front panel 1 is made
  • step S005 the display front panel 1 and the support plate 3 with the thin film transistor substrate 2 are assembled into a display screen.
  • Figure 1 the display front panel 1 and the support plate 3 with the thin film transistor substrate 2 are assembled into a display screen.
  • the display screen of a desired size can be cut by a suitable cutting process.
  • the order of the display front panel 1 and the fabrication of the large-sized thin film transistor substrate 2 may not be strictly limited, and the fabrication of the front panel 1 may be performed simultaneously or at the same time as the fabrication of the thin film transistor substrate 2, as long as step S001 ⁇
  • the method of 003 fabricates the thin film transistor substrate 2, which shows that the acquisition of the front plate 1 and its combination with the thin film transistor substrate 2 are not strictly limited.
  • the above method obtains the large-sized thin film transistor substrate 2 by splicing the thin film transistor substrate unit 21, thereby avoiding direct splicing of the small-sized display screen, thereby avoiding the splicing gap caused by the display frame border or the adhesive glue and the sealant;
  • the method only needs to splicing the thin film transistor substrate unit 21, which is easier to implement than the process of directly splicing the display screen, and has high production efficiency; in addition, the yield is higher than the conventional method of eliminating the splicing gap by using the lens, and Reduced costs.
  • the display mode of the large-size display screen is various.
  • the core structure of the light-emitting control unit 11 is a liquid crystal layer.
  • the core structure of the light-emitting control unit 11 is an OLED light-emitting layer.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • Fig. 4 is a cross-sectional view showing a large-sized display screen according to a first embodiment of the present invention, and for convenience of explanation, only parts related to the present embodiment are shown.
  • the large-sized display panel includes a display front panel 1 and a thin film transistor substrate 2 which are laminated on each other, and the thin film transistor substrate 2 is formed by splicing a plurality of thin film transistor substrate units 21 and carried and fixed by a support plate 3.
  • the display front panel 1 adopts a liquid crystal display front panel, and includes a light-emitting control unit 11 composed of a filter 111, a lower alignment film 112, a liquid crystal layer 113, an upper alignment film 114, and a transparent conductive layer 115, on the light-emitting side of the light-emitting control unit 11.
  • a transparent front plate 12 is provided, and the filter 111 is attached to the light incident side of the transparent front plate 12.
  • the large-size display screen sequentially includes, in the direction of the image output, a lower polarizer-support plate-thin film transistor substrate-lower alignment film-liquid crystal layer-upward alignment film-transparent conductive layer-filter-transparent front plate- Upper polarizer.
  • the filter 111 can also be formed by splicing a plurality of filter units.
  • the large-size liquid crystal display splices a plurality of small-sized thin film transistor substrate units into a thin film transistor substrate of a desired size, and then assembled into a large-sized display with a liquid crystal display front plate and a support plate of a single structure.
  • the screen avoids the splicing gap generated by the adhesive of the liquid crystal panel when directly splicing the liquid crystal display; and directly splicing the small-sized thin film transistor substrate unit has a higher yield rate than directly preparing the single-thickness thin film transistor substrate of the same size, and further The yield and production efficiency of the large-size liquid crystal display are improved, and the cost is reduced.
  • the problem of low yield rate caused by low alignment accuracy of the optical lens when the optical system is used to eliminate the splicing gap is also solved.
  • the following provides a method of manufacturing a large-size liquid crystal display, as shown in FIG. 5:
  • step S101 a substrate is selected, and a plurality of thin film transistor arrays are prepared on the substrate;
  • step S102 the substrate is cut, and the dicing line is aligned with the edge of the thin film transistor array to be spliced, and a plurality of thin film transistor substrate units each having a thin film transistor array are obtained;
  • step S103 a support plate is selected, and a plurality of thin film transistor substrate units are spliced to each other along the cutting surface thereof on the support plate to form a thin film transistor substrate;
  • the substrate is preferably cut along the edge of the thin film transistor array to be spliced by a laser cutter without polishing, and the high-precision cutting surface is used as a subsequent splicing surface.
  • a support plate with a thin film transistor substrate of a desired size can be prepared, which is used to carry and fix the spliced thin film transistor substrate on the one hand, and is also used for assembly on the other hand.
  • the support plate of the rear display is also used for assembly on the other hand.
  • step S104 preparing a lower alignment film on the thin film transistor substrate
  • step S105 a transparent front plate is selected, and a filter, a transparent conductive layer and an upper alignment film are sequentially disposed on a surface of the transparent front plate;
  • step S106 a spacer is disposed on the upper alignment film or the lower alignment film;
  • step S107 the support plate and the transparent front plate are assembled, the upper alignment film and the lower alignment film are relatively bonded, and the liquid crystal is poured between the upward alignment film and the lower alignment film;
  • step S108 a polarizer is disposed on each of the transparent front plate and the support plate;
  • step S109 the driving circuit is assembled to obtain a liquid crystal display.
  • the preparation of the liquid crystal display front panel is completed, and finally, after step S109, a large-size liquid crystal display panel can be obtained.
  • the transparent front plate for fixing the filter can be used for the front plate of the display screen, and the transparent front plate and the support plate have a protective effect on the structure between the two.
  • the large-size liquid crystal display shown in FIG. 3 can be obtained by the above method, which realizes seamless splicing, and achieves the advantages of high yield, high yield, and low cost.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • Fig. 6 is a cross-sectional view showing a large-sized display screen (AMOLED display panel) according to a second embodiment of the present invention, and for convenience of explanation, only parts related to the present embodiment are shown.
  • the large-size AMOLED display panel includes a display front panel 1 and a thin film transistor substrate 2 which are superposed on each other.
  • the thin film transistor substrate 2 is formed by splicing a plurality of thin film transistor substrate units 21 and carried and fixed by a support plate 3.
  • the display front panel 1 uses an OLED display front panel, and includes a light-emitting control unit 11 including an OLED light-emitting layer 112 and a transparent front panel 12 disposed on the light-emitting side of the OLED light-emitting layer 112.
  • the light emitted by the OLED light-emitting layer is white light
  • the filter 111 can also be formed by splicing a plurality of filter units.
  • the OLED light emitting layer 112 is formed by splicing a plurality of OLED light emitting units 1121.
  • the OLED light emitting layer 112 and the thin film transistor substrate 2 are formed in the same cutting and splicing process, and the OLED light emitting unit 1121 and the thin film transistor substrate unit 21 are formed one by one. Registration setting.
  • a protective film 113 may be provided on the light-emitting side of the OLED light-emitting layer 112 and on the light-incident side of the transparent front plate 12.
  • the large-sized OLED display screen includes, in order of the image output direction, a support plate 3 - a thin film transistor substrate 2 - an OLED light emitting layer 112 - a protective film 113 - a filter 111 (optional) - a transparent front plate 12.
  • the large-size AMOLED display panel provided in this embodiment splices a plurality of thin film transistor substrate units 21 and OLED light emitting units 1121 into a thin film transistor and an OLED substrate of a desired size, and a transparent front plate 12 and a support plate 3 of a single structure.
  • the following provides a method of manufacturing a large-sized AMOLED display screen, as shown in FIG. 7:
  • step S201 a substrate is selected, a plurality of thin film transistor arrays are prepared on the substrate, and an OLED light emitting unit is disposed on each of the thin film transistor arrays;
  • step S202 the substrate is cut, and the cutting line is aligned with the edge of the thin film transistor array and the OLED light emitting unit to be spliced, and a plurality of substrate units each having one of the thin film transistor array and one OLED light emitting unit are obtained;
  • step S203 a support plate is selected, and a plurality of substrate units are spliced together along the cutting surface thereof on the support plate to form a thin film transistor and an OLED substrate;
  • the thin film transistor and the OLED substrate include the thin film transistor substrate 2 and the OLED light emitting layer 112 described above.
  • the substrate is preferably cut by the laser cutting machine along the edge of the thin film transistor array and the OLED light emitting unit to be spliced, without polishing after cutting, and the high-precision cutting surface is used as the subsequent splicing surface.
  • step S204 a transparent front plate is selected, and the support plate and the transparent front plate are assembled to make the thin film transistor and the OLED substrate and the transparent front plate relatively close to each other;
  • the thin film transistor and the OLED substrate are brought into close contact with the filter.
  • step S205 the driving circuit is assembled to obtain an AMOLED display screen.
  • the large-size AMOLED display screen shown in FIG. 6 can be obtained by the above method, thereby avoiding the splicing gap caused by the frame of the display screen when directly splicing the display unit, and achieving high yield, high yield and low cost. the goal of.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • Fig. 8 is a cross-sectional view showing a large-sized display screen (AMOLED display panel) according to a third embodiment of the present invention, and for convenience of explanation, only parts related to the present embodiment are shown.
  • the display panel includes a display front panel 1 and a thin film transistor substrate 2 which are superposed on each other.
  • the thin film transistor substrate 2 is formed by splicing a plurality of thin film transistor substrate units 21 and carried and fixed by a support plate 3.
  • the display front panel 1 still uses the OLED display front panel, and includes the light-emitting control unit 11 - the OLED light-emitting layer 112, and the transparent front panel 12 disposed on the light-emitting side of the OLED light-emitting layer 112.
  • the light emitted by the OLED light-emitting layer is white light, It is also necessary to provide a filter 111 on the light incident side of the transparent front plate.
  • the OLED light-emitting layer is a single-layer light-emitting layer formed on the thin film transistor substrate 2, and does not need to be cut and formed together with the thin film transistor substrate unit 21.
  • a protective film 113 may be provided on the light-emitting side of the OLED light-emitting layer 112 and on the light-incident side of the transparent front plate 12.
  • the large-sized OLED display screen includes, in order of the image output direction, a support plate 3 - a thin film transistor substrate 2 - an OLED light emitting layer 112 - a protective film 113 - a filter 111 (optional) - a transparent front plate 13.
  • the large-size AMOLED display panel provided in this embodiment splices a plurality of thin film transistor substrate units 21 into a thin film transistor substrate of a desired size, and is combined with the monolithic OLED light emitting layer 112, the transparent front plate 12, and the support plate 3.
  • the assembly is assembled into a large-sized display screen, which avoids the splicing gap generated by the display frame when directly splicing the display screen; and the yield rate is higher, the splicing precision is more easily controlled, the production efficiency and the yield rate are effectively improved, and the cost is reduced.
  • the following provides a method of manufacturing a large-sized AMOLED display screen, as shown in FIG. 9:
  • step S301 a substrate is selected, and a plurality of thin film transistor arrays are prepared on the substrate;
  • step S302 the substrate is cut, and the dicing line is aligned with the edge of the thin film transistor array to be spliced, and a plurality of thin film transistor substrate units each having one of the thin film transistor arrays are obtained;
  • step S303 a support plate is selected, and a plurality of thin film transistor substrate units are spliced to each other along the cutting surface thereof on the support plate to form a thin film transistor substrate;
  • step S304 preparing a monolithic OLED light-emitting layer on the thin film transistor substrate
  • step S305 a transparent front plate is selected, and the thin film transistor substrate with the OLED light emitting layer and the transparent front plate are assembled to make the OLED light emitting layer and the transparent front plate relatively close to each other;
  • step S306 the driving circuit is assembled to obtain an AMOLED display screen.
  • the large-size AMOLED display screen shown in FIG. 8 can be obtained by the above method, thereby avoiding the splicing gap caused by the frame of the display screen when directly splicing the display unit, and achieving high yield, high yield and low cost. the goal of.
  • the above embodiment only discloses a seamless splicing method of the liquid crystal display and the AMOLED display, but the invention is not limited to the liquid crystal display and the AMOLED display, as long as the spliced thin film transistor substrate and other single structural components are assembled.
  • the large size display screens are all within the scope of the present invention.

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Description

一种大尺寸显示屏及其制造方法 技术领域
本发明属于显示技术领域，特别涉及一种大尺寸显示屏及其制造方法。
 背景技术
目前，在显示技术领域，对于大屏幕显示的需求与日俱增，在多种显示技术如薄膜晶体管液晶显示（TFT-LCD）、有源驱动有机电致发光（AMOLED）等技术中，由于受限于大尺寸TFT阵列的产率，使得显示屏的尺寸难以做大，显示屏的产率关于尺寸成指数降低，另外，由于设备成本的增加，及TFT阵列低产率导致的材料和运营成本上升，使得制造成本关于显示屏尺寸成指数增加。因此，低成本、高良品率的大屏幕显示器依然难以实现，从而影响了高性能、大屏幕显示技术在会议室、家庭影院、室外广告等领域的发展和应用。
为了解决显示屏的尺寸问题，现有技术多采用多屏拼接技术，其主要包括两种：第一种，直接将超窄边框的多块显示屏拼接，常见于显示墙，但是由于显示屏边框的存在，无法真正实现“无缝”拼接，目前大尺寸液晶显示屏的最小拼接缝隙仍然大于5 mm；第二种，直接拼接未封装的液晶显示单体，然后统一封装前板和支撑板，但这种显示屏的尺寸又受限于液晶板密封胶的限制，仍然无法做到无缝拼接，并且，这种拼接方式需要对液晶板的拼接面进行打磨，其技术难度较大，生产成本很高。
为了克服上述方法中的拼接缝隙，现有技术使用光学透镜阵列将图像放大到拼接屏边框区域，以实现无缝显示，而光学透镜的大量使用及精确对位增大了显示屏的制造成本，并且，光学透镜的对位必然存在误差，不可避免的降低了良品率，使大尺寸显示器件的制备工艺更加复杂，生产效率低下且成本更高。
 技术问题
本发明的目的在于提供一种大尺寸显示屏，旨在解决传统大尺寸显示屏拼接缝隙大，且制造成本较高、生产效率及良品率低的问题。
 技术解决方案
本发明是这样实现的，一种大尺寸显示屏，包括相互叠合的显示前板和薄膜晶体管基板，在所述薄膜晶体管基板背向所述显示前板的一侧设有支撑板，所述薄膜晶体管基板由多块薄膜晶体管基板单元拼接而成，并通过所述支撑板承载和固定。
本发明的另一目的在于提供一种制造大尺寸显示屏的方法，包括下述步骤：
包括下述步骤：
选取一基板，在所述基板上制备多片薄膜晶体管阵列；
切割所述基板，且切割线与所述薄膜晶体管阵列的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列的薄膜晶体管基板单元；
选取一支撑板，在所述支撑板上将多块所述薄膜晶体管基板单元沿其切割面相互拼接，形成薄膜晶体管基板；
制作显示前板；
将所述显示前板和带有所述薄膜晶体管基板的支撑板组装成显示屏。
本发明的另一目的在于提供一种制造大尺寸液晶显示屏的方法，包括下述步骤：
选取一基板，在所述基板上制备多片薄膜晶体管阵列；
切割所述基板，且切割线与所述薄膜晶体管阵列的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列的薄膜晶体管基板单元；
选取一支撑板，在所述支撑板上将多块所述薄膜晶体管基板单元沿其切割面相互拼接，形成薄膜晶体管基板；
在所述薄膜晶体管基板上制备下配向膜；
选取一透明前板，并在所述透明前板的一表面上依次设置滤光片、透明导电层及上配向膜；
在所述上配向膜或下配向膜上设置间隔物；
将所述支撑板和所述透明前板组装起来，使所述上配向膜和下配向膜相对粘接，并向所述上配向膜和下配向膜之间灌注液晶；
分别在所述透明前板和所述支撑板的外侧各设置一偏光片；
组装驱动电路，获得液晶显示屏。
本发明的再一目的在于提供一种制造大尺寸有源驱动有机电致发光（ AMOLED）显示屏的方法，包括下述步骤：
选取一基板，在所述基板上制备多片薄膜晶体管阵列，并在每片所述薄膜晶体管阵列之上对位设置有机电致发光单元；
切割所述基板，且切割线与所述薄膜晶体管阵列和有机电致发光单元的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列和一有机电致发光单元的基板单元；
选取一支撑板，在所述支撑板上将多块所述基板单元沿其切割面相互拼接，形成薄膜晶体管及有机电致发光基板；
选取一透明前板，将所述支撑板和所述透明前板组装起来，使所述薄膜晶体管及有机电致发光基板与透明前板相对贴合；
组装驱动电路，获得有源驱动有机电致发光显示屏。
本发明的再一目的在于提供一种制造大尺寸有源驱动有机电致发光显示屏的方法，包括下述步骤：
选取一基板，在所述基板上制备多片薄膜晶体管阵列；
切割所述基板，且切割线与所述薄膜晶体管阵列的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列的薄膜晶体管基板单元；
选取一支撑板，在所述支撑板上将多块所述薄膜晶体管基板单元沿其切割面相互拼接，形成薄膜晶体管基板；
在所述薄膜晶体管基板上制备单片结构的有机电致发光层；
选取一透明前板，将所述带有有机电致发光层的薄膜晶体管基板和所述透明前板组装起来，使所述有机电致发光层与透明前板相对贴合；
组装驱动电路，获得有源驱动有机电致发光显示屏。
 有益效果
本发明提供的大尺寸显示屏采用的薄膜晶体管基板由多块薄膜晶体管基板单元拼接而成，同时配置单体结构（非拼接结构）的显示前板和支撑板，并非如传统方法直接拼接组装好的显示屏，可以避免直接拼接显示屏时由于显示屏边框或粘合胶与密封胶限制而产生的拼接缝隙；并且，小尺寸薄膜晶体管基板的良品率高，使得直接拼接的大尺寸薄膜晶体管基板的良品率远高于直接制造单块同尺寸薄膜晶体管基板，从而使得本发明能够提高大尺寸显示屏的生产效率并大幅降低成本；另外，与传统的采用各种光学系统来消除拼接缝隙的结构相比，节约了成本，避免了透镜对位精度对显示效果的影响，提高了大尺寸拼接屏的良品率。
同样的，采用本发明提供的方法制造大尺寸的显示屏，一方面可以真正实现无缝拼接，另一方面可以提高生产效率及良品率，同时节约成本，适合用于大尺寸显示屏的批量生产。
 附图说明
图1是本发明提供的大尺寸显示屏的截面图；
图2是本发明提供的大尺寸显示屏的制造流程图；
图3是与图2相适应的大尺寸显示屏制造流程中的结构示意图；
图4是本发明第一实施例提供的大尺寸液晶显示屏的截面图；
图5是本发明第一实施例提供的大尺寸液晶显示屏的制造流程图；
图6是本发明第二实施例提供的大尺寸AMOLED显示屏的截面图；
图7是本发明第二实施例提供的大尺寸AMOLED显示屏的制造流程图；
图8是本发明第三实施例提供的大尺寸AMOLED显示屏的截面图；
图9是本发明第三实施例提供的大尺寸AMOLED显示屏的制造流程图。
 本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
参考图1，本发明提供的大尺寸显示屏主要包括相互叠合的显示前板1和薄膜晶体管基板2，在薄膜晶体管基板2背向显示前板1的一侧设有支撑板3，其中，薄膜晶体管基板2由多块薄膜晶体管基板单元21拼接而成，并通过支撑板3承载和固定。
进一步的，该大尺寸显示屏中的显示前板1可以有多种，如液晶显示、有机电致发光（OLED）显示等。而无论采用何种类型的显示前板，均需包括出光控制单元11和一透明前板12，出光控制单元11可包含一滤光片111（液晶显示必须配置滤光片，OLED显示则可以根据实际需要配置或不配置滤光片），用于对出光控制单元11发出的光线进行颜色和强度的调配，以输出图像，通常，滤光片111附着于透明前板12的表面。滤光片111通常可以做成大尺寸而不需拼接，但是在必要时，滤光片111也可以同薄膜晶体管基板2一样，由多片滤光片单元拼接而成。
在本发明中，薄膜晶体管基板2为拼接结构，而其他部件如显示前板1、支撑板3等均为非拼接结构，即单体结构。这样直接采用多块小尺寸的薄膜晶体管基板单元21拼接成所需尺寸的薄膜晶体管基板2，再配置单体结构的显示前板1和支撑板3，而并非如传统方法直接拼接完整的显示屏，可有效避免直接拼接显示屏时由于显示屏边框或粘合胶和密封胶产生的拼接缝隙；并且，小尺寸薄膜晶体管基板的良品率高，使得直接拼接的大尺寸薄膜晶体管基板的良品率远高于直接制造单块同尺寸薄膜晶体管基板，从而使得本发明能够提高大尺寸显示屏的生产效率并大幅降低成本；另外，与传统的采用各种光学系统来消除拼接缝隙的结构相比，节约了成本，避免了透镜对位精度对显示效果的影响，提高了大尺寸拼接屏的良品率。
该大尺寸显示屏可以通过下述方法制造，如图2、3：
在步骤S001中，选取一基板211，在基板211上制备多片薄膜晶体管阵列212；如图3中的图示（A）。
在此步骤中，根据预拼接的薄膜晶体管基板单元21的大小制备相应尺寸的薄膜晶体管阵列212，多片薄膜晶体管阵列212独立的附着在基板211上。
在步骤S002中，切割基板211，且切割线与薄膜晶体管阵列212的待拼接的边缘对齐，获得多块各带有一片薄膜晶体管阵列212的薄膜晶体管基板单元21；如图3中的图示（B）。
在此步骤中，通过切割设备沿薄膜晶体管阵列212的待拼接的边缘切割基板211，获得的每块薄膜晶体管基板单元21均带有一片薄膜晶体管阵列212。
优选的，切割设备可选择激光切割机，激光切割方式可以达到微米量级的切割精度，无需抛光，高精度的切割面将成为后续的拼接面。在步骤S003中，选取一支撑板3，在支撑板3上将多块薄膜晶体管基板单元21沿其切割面相互拼接，形成薄膜晶体管基板2；如图3中的图示（C）。
在此步骤中，可以根据实际需要的尺寸拼接多块薄膜晶体管基板单元21，拼接好的薄膜晶体管基板2的尺寸可满足大尺寸显示屏的需要。
在步骤S004中，制作显示前板1；
在步骤S005中，将显示前板1和带有薄膜晶体管基板2的支撑板3组装成显示屏。如图1。
在此步骤中，将显示前板1和带有薄膜晶体管基板2的支撑板3组装到一起之后，可通过适当的切割工艺切割得到所需尺寸的显示屏。
可以理解，制作显示前板1与制作大尺寸的薄膜晶体管基板2的先后顺序可以不必严格限制，显示前板1的制作也可以和薄膜晶体管基板2的制作同时或交叉进行，只要按照步骤S001~003的方法制作了薄膜晶体管基板2，其显示前板1的获得及其与薄膜晶体管基板2的组合方式不必严格限制。
上述方法通过拼接薄膜晶体管基板单元21的方式获得大尺寸的薄膜晶体管基板2，避免直接拼接小尺寸的显示屏，进而避免了由于显示屏边框或粘合胶及密封胶导致的拼接缝隙；并且，该方法只需拼接薄膜晶体管基板单元21，与直接拼接显示屏的工艺相比更易实现，生产效率较高；另外，与传统的采用透镜消除拼接缝隙的方式相比，其良品率更高，且降低了成本。
可以理解，该大尺寸显示屏的显示方式有多种，采用液晶显示时，其出光控制单元11的核心结构为液晶层，当采用OLED显示时，其出光控制单元11的核心结构为OLED发光层，以下进一步结合具体实施例对上述两种类型的显示屏进行更加详细的描述：
实施例一：
图4示出了本发明第一实施例提供的大尺寸显示屏的截面图，为了便于说明，仅示出了与本实施例相关的部分。
该大尺寸显示屏包括相互叠合的显示前板1和薄膜晶体管基板2，薄膜晶体管基板2由多块薄膜晶体管基板单元21拼接而成，并通过一支撑板3承载和固定。显示前板1采用液晶显示前板，包括由滤光片111、下配向膜112、液晶层113、上配向膜114及透明导电层115组成的出光控制单元11，在出光控制单元11的出光侧设置有透明前板12，滤光片111附着于透明前板12的入光侧。并且，在透明前板12的出光侧设有上偏光片4，在支撑板3的背部设有下偏光片5。因此，该大尺寸显示屏沿着图像输出的方向依次包括：下偏光片—支撑板—薄膜晶体管基板—下配向膜—液晶层—上配向膜—透明导电层—滤光片—透明前板—上偏光片。同上所述的，滤光片111也可以由多片滤光片单元拼接而成。
本实施例提供的大尺寸的液晶显示屏将多块小尺寸的薄膜晶体管基板单元拼接成所需尺寸的薄膜晶体管基板，然后与单体结构的液晶显示前板和支撑板组装成大尺寸的显示屏，避免了直接拼接液晶显示屏时由于液晶面板的粘合胶产生的拼接缝隙；并且，直接拼接小尺寸薄膜晶体管基板单元较直接制备同尺寸的单体薄膜晶体管基板的良品率更高，进而提高了大尺寸液晶显示屏的良品率和生产效率，降低了成本；另外还解决了采用光学系统消除拼接缝隙时光学透镜对位精度低导致的良品率低的问题。
以下提供一种制造大尺寸液晶显示屏的方法，如图5：
在步骤S101中，选取一基板，在基板上制备多片薄膜晶体管阵列；
在步骤S102中，切割基板，且切割线与薄膜晶体管阵列的待拼接的边缘对齐，获得多块各带有一片薄膜晶体管阵列的薄膜晶体管基板单元；
在步骤S103中，选取一支撑板，在支撑板上将多块薄膜晶体管基板单元沿其切割面相互拼接，形成薄膜晶体管基板；
在此步骤中，优选通过激光切割机沿薄膜晶体管阵列的待拼接的边缘切割基板，无需抛光，高精度的切割面作为后续的拼接面。
在本实施例中，经过步骤S101~103后，可制备带有所需尺寸的薄膜晶体管基板的支撑板，该支撑板一方面用于承载和固定拼接的薄膜晶体管基板，另一方面兼用于组装后的显示屏的支撑板。
在步骤S104中，在薄膜晶体管基板上制备下配向膜；
在步骤S105中，选取一透明前板，并在透明前板的一表面上依次设置滤光片、透明导电层及上配向膜；
在步骤S106中，在上配向膜或下配向膜上设置间隔物；
在步骤S107中，将支撑板和透明前板组装起来，使上配向膜和下配向膜相对粘接，并向上配向膜和下配向膜之间灌注液晶；
在步骤S108中，分别在透明前板和支撑板的外侧各设置一偏光片；
在步骤S109中，组装驱动电路，获得液晶显示屏。
经过步骤S104~108后，完成了液晶显示前板的制备，最后经过步骤S109，即可获得大尺寸的液晶显示屏。其中，用于固定滤光片的透明前板可兼用于显示屏的前板，该透明前板与支撑板对二者之间的结构具有保护作用。
本实施例通过上述方法可获得图3所示的大尺寸的液晶显示屏，真正实现了无缝拼接，同时实现了高产率、高良品率及低成本的目的。
实施例二：
图6示出了本发明第二实施例提供的大尺寸显示屏（AMOLED显示屏）的截面图，为了便于说明，仅示出了与本实施例相关的部分。
该大尺寸AMOLED显示屏包括相互叠合的显示前板1和薄膜晶体管基板2，薄膜晶体管基板2由多块薄膜晶体管基板单元21拼接而成，并通过一支撑板3承载和固定。显示前板1采用OLED显示前板，包括出光控制单元11，其含有一OLED发光层112，及设置于OLED发光层112的出光侧的透明前板12，当OLED发光层所发出的光为白光时，还需在透明前板12的入光侧设置滤光片111。同上所述的，滤光片111也可以由多片滤光片单元拼接而成。
其中，OLED发光层112由多个OLED发光单元1121拼接而成，该OLED发光层112与薄膜晶体管基板2是在同一切割及拼接工序中形成的，OLED发光单元1121与薄膜晶体管基板单元21一一对位设置。另外，还可以在OLED发光层112的出光侧并于透明前板12的入光侧设置保护膜113。该大尺寸的OLED显示屏沿着图像输出的方向依次包括：支撑板3—薄膜晶体管基板2—OLED发光层112—保护膜113—滤光片111（可选）—透明前板12。
本实施例提供的大尺寸的AMOLED显示屏将多块薄膜晶体管基板单元21及OLED发光单元1121拼接成所需尺寸的薄膜晶体管及OLED基板，并与单体结构的透明前板12及支撑板3相结合，组装成大尺寸的显示屏，避免了直接拼接显示屏时由于显示屏边框产生的拼接缝隙；并且，拼接小尺寸的薄膜晶体管及OLED基板较拼接显示屏或在拼接处设置光学系统的良品率更高，拼接精度更易控制，进而有效提高了生产效率及良品率，降低了成本。
以下提供一种制造大尺寸AMOLED显示屏的方法，如图7：
在步骤S201中，选取一基板，在基板上制备多片薄膜晶体管阵列，并在每片薄膜晶体管阵列之上对位设置OLED发光单元；
在步骤S202中，切割基板，且切割线与薄膜晶体管阵列和OLED发光单元的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列和一OLED发光单元的基板单元；
在步骤S203中，选取一支撑板，在支撑板上将多块基板单元沿其切割面相互拼接，形成薄膜晶体管及OLED基板；
其中，薄膜晶体管及OLED基板即包括上述的薄膜晶体管基板2及OLED发光层112。
在此步骤中，优选通过激光切割机沿薄膜晶体管阵列及OLED发光单元的待拼接的边缘切割基板，切割后无需抛光，高精度的切割面作为后续的拼接面。
在步骤S204中，选取一透明前板，将支撑板和透明前板组装起来，使薄膜晶体管及OLED基板与透明前板相对贴合；
在此步骤中，可根据实际需要选择是否在透明前板的表面设置滤光片。
若透明前板上设有滤光片，则使使薄膜晶体管及OLED基板同滤光片相对贴合。
在步骤S205中，组装驱动电路，获得AMOLED显示屏。
本实施例通过上述方法可获得图6所示的大尺寸的AMOLED显示屏，避免直接拼接显示屏单体时由于显示屏的边框导致的拼接缝隙，同时实现了高产率、高良品率及低成本的目的。
实施例三：
图8示出了本发明第三实施例提供的大尺寸显示屏（AMOLED显示屏）的截面图，为了便于说明，仅示出了与本实施例相关的部分。
该显示屏包括相互叠合的显示前板1和薄膜晶体管基板2，薄膜晶体管基板2由多块薄膜晶体管基板单元21拼接而成，并通过一支撑板3承载和固定。显示前板1仍采用OLED显示前板，包括出光控制单元11—OLED发光层112，及设置于OLED发光层112的出光侧的透明前板12，当OLED发光层所发出的光为白光时，还需在透明前板的入光侧设置滤光片111。
与实施例二不同的是，该OLED发光层是形成于薄膜晶体管基板2之上的单片结构的发光层，不需同薄膜晶体管基板单元21一起切割成型。另外，还可以在OLED发光层112的出光侧并于透明前板12的入光侧设置保护膜113。该大尺寸的OLED显示屏沿着图像输出的方向依次包括：支撑板3—薄膜晶体管基板2—OLED发光层112—保护膜113—滤光片111（可选）—透明前板13。
本实施例提供的大尺寸的AMOLED显示屏将多块薄膜晶体管基板单元21拼接成所需尺寸的薄膜晶体管基板，并与单片结构的OLED发光层112、透明前板12及支撑板3相结合，组装成大尺寸的显示屏，避免了直接拼接显示屏时由于显示屏边框产生的拼接缝隙；并且良品率更高，拼接精度更易控制，有效提高了生产效率及良品率，降低了成本。
以下提供一种制造大尺寸AMOLED显示屏的方法，如图9：
在步骤S301中，选取一基板，在基板上制备多片薄膜晶体管阵列；
在步骤S302中，切割基板，且切割线与薄膜晶体管阵列的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列的薄膜晶体管基板单元；
在步骤S303中，选取一支撑板，在支撑板上将多块薄膜晶体管基板单元沿其切割面相互拼接，形成薄膜晶体管基板；
在步骤S304中，在薄膜晶体管基板上制备单片结构的OLED发光层；
在步骤S305中，选取一透明前板，将带有OLED发光层的薄膜晶体管基板和透明前板组装起来，使所述OLED发光层与透明前板相对贴合；
在此步骤中，可根据实际需要选择是否在透明前板的表面设置滤光片。
在步骤S306中，组装驱动电路，获得AMOLED显示屏。
本实施例通过上述方法可获得图8所示的大尺寸的AMOLED显示屏，避免直接拼接显示屏单体时由于显示屏的边框导致的拼接缝隙，同时实现了高产率、高良品率及低成本的目的。
可以理解，上述实施例仅公开了液晶显示屏和AMOLED显示屏的无缝拼接方法，但本发明不仅限于液晶显示和AMOLED显示，只要是将拼接的薄膜晶体管基板与其他单体结构的部件组装成的大尺寸显示屏均属于本发明的保护范围。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (14)

  1. 一种大尺寸显示屏，其特征在于，包括相互叠合的显示前板和薄膜晶体管基板，在所述薄膜晶体管基板背向所述显示前板的一侧设有支撑板，所述薄膜晶体管基板由多块薄膜晶体管基板单元拼接而成，并通过所述支撑板承载和固定。
  2. 如权利要求1所述的大尺寸显示屏，其特征在于，所述显示前板包括自所述薄膜晶体管基板的表面依次设置的：出光控制单元及透明前板。
  3. 如权利要求2所述的大尺寸显示屏，其特征在于，所述出光控制单元及透明前板分别为单片出光控制单元及单片透明前板。
  4. 如权利要求2或3 所述的大尺寸显示屏，其特征在于，所述出光控制单元包括液晶显示单元。
  5. 如权利要求4所述的大尺寸显示屏，其特征在于，所述液晶显示单元包括自所述薄膜晶体管基板的表面依次设置的：下配向膜、液晶层、上配向膜、透明导电层及滤光片。
  6. 如权利要求4所述的大尺寸显示屏，其特征在于，在所述透明前板的出光侧设有上偏光片，在所述支撑板的背部设有下偏光片。
  7. 如权利要求2所述的大尺寸显示屏，其特征在于，所述出光控制单元包括有机电致发光层；
    所述有机电致发光层由多个有机电致发光单元拼接而成。
  8. 如权利要求7所述的大尺寸显示屏，其特征在于，所述有机电致发光单元与所述薄膜晶体管基板单元一一对位设置。
  9. 如权利要求2所述的大尺寸显示屏，其特征在于，所述出光控制单元包括单片有机电致发光层。
  10. 如权利要求7、8或9所述的大尺寸显示屏，其特征在于，在所述有机电致发光层上并于所述透明前板的入光侧设有保护膜。
  11. 一种制造大尺寸显示屏的方法，其特征在于，包括下述步骤：
    选取一基板，在所述基板上制备多片薄膜晶体管阵列；
    切割所述基板，且切割线与所述薄膜晶体管阵列的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列的薄膜晶体管基板单元；
    选取一支撑板，在所述支撑板上将多块所述薄膜晶体管基板单元沿其切割面相互拼接，形成薄膜晶体管基板；
    制作显示前板；
    将所述显示前板和带有所述薄膜晶体管基板的支撑板组装成显示屏。
  12. 一种制造大尺寸液晶显示屏的方法，其特征在于，包括下述步骤：
    选取一基板，在所述基板上制备多片薄膜晶体管阵列；
    切割所述基板，且切割线与所述薄膜晶体管阵列的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列的薄膜晶体管基板单元；
    选取一支撑板，在所述支撑板上将多块所述薄膜晶体管基板单元沿其切割面相互拼接，形成薄膜晶体管基板；
    在所述薄膜晶体管基板上制备下配向膜；
    选取一透明前板，并在所述透明前板的一表面上依次设置滤光片、透明导电层及上配向膜；
    在所述上配向膜或下配向膜上设置间隔物；
    将所述支撑板和所述透明前板组装起来，使所述上配向膜和下配向膜相对粘接，并向所述上配向膜和下配向膜之间灌注液晶；
    分别在所述透明前板和所述支撑板的外侧各设置一偏光片；
    组装驱动电路，获得液晶显示屏。
  13. 一种制造大尺寸有源驱动有机电致发光显示屏的方法，其特征在于，包括下述步骤：
    选取一基板，在所述基板上制备多片薄膜晶体管阵列，并在每片所述薄膜晶体管阵列之上对位设置有机电致发光单元；
    切割所述基板，且切割线与所述薄膜晶体管阵列和有机电致发光单元的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列和一有机电致发光单元的基板单元；
    选取一支撑板，在所述支撑板上将多块所述基板单元沿其切割面相互拼接，形成薄膜晶体管及有机电致发光基板；
    选取一透明前板，将所述支撑板和所述透明前板组装起来，使所述薄膜晶体管及有机电致发光基板与透明前板相对贴合；
    组装驱动电路，获得有源驱动有机电致发光显示屏。
  14. 一种制造大尺寸有源驱动有机电致发光显示屏的方法，其特征在于，包括下述步骤：
    选取一基板，在所述基板上制备多片薄膜晶体管阵列；
    切割所述基板，且切割线与所述薄膜晶体管阵列的待拼接的边缘对齐，获得多块各带有一片所述薄膜晶体管阵列的薄膜晶体管基板单元；
    选取一支撑板，在所述支撑板上将多块所述薄膜晶体管基板单元沿其切割面相互拼接，形成薄膜晶体管基板；
    在所述薄膜晶体管基板上制备单片结构的有机电致发光层；
    选取一透明前板，将所述带有有机电致发光层的薄膜晶体管基板和所述透明前板组装起来，使所述有机电致发光层与透明前板相对贴合；
    组装驱动电路，获得有源驱动有机电致发光显示屏。
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