WO2014036736A1 - Écran d'affichage de grande taille et son procédé de fabrication - Google Patents

Écran d'affichage de grande taille et son procédé de fabrication Download PDF

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Publication number
WO2014036736A1
WO2014036736A1 PCT/CN2012/081186 CN2012081186W WO2014036736A1 WO 2014036736 A1 WO2014036736 A1 WO 2014036736A1 CN 2012081186 W CN2012081186 W CN 2012081186W WO 2014036736 A1 WO2014036736 A1 WO 2014036736A1
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WIPO (PCT)
Prior art keywords
thin film
film transistor
substrate
display
display screen
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PCT/CN2012/081186
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English (en)
Chinese (zh)
Inventor
余晓军
魏鹏
刘自鸿
Original Assignee
深圳市柔宇科技有限公司
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to PCT/CN2012/081186 priority Critical patent/WO2014036736A1/fr
Priority to CN201280001478.5A priority patent/CN103797531A/zh
Publication of WO2014036736A1 publication Critical patent/WO2014036736A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13336—Combining plural substrates to produce large-area displays, e.g. tiled displays

Definitions

  • the invention belongs to the technical field of display, and in particular relates to a large-sized display screen and a manufacturing method thereof.
  • TFT-LCD thin film transistor liquid crystal display
  • AMOLED active drive organic electroluminescence
  • the yield of the size TFT array makes the size of the display screen difficult to enlarge, the yield of the display screen decreases exponentially with respect to size, and the material and operating costs increase due to the increase in equipment cost and low yield of the TFT array, resulting in manufacturing The cost increases exponentially with respect to display size. Therefore, low-cost, high-yield large-screen displays are still difficult to achieve, thus affecting the development and application of high-performance, large-screen display technology in conference rooms, home theater, outdoor advertising and other fields.
  • the prior art mostly adopts the multi-screen splicing technology, which mainly includes two types: the first one, directly splicing multiple display screens of the ultra-narrow bezel, which is common in the display wall, but due to the display frame The existence of the "seamless" splicing can not be realized, the smallest splicing gap of the large-size LCD screen is still greater than 5 Mm; the second, directly splicing the unpackaged liquid crystal display unit, and then uniformly encapsulating the front and support plates, but the size of the display is limited by the limitation of the liquid crystal panel sealant, and still cannot be seamlessly spliced. Moreover, the splicing method requires grinding the splicing surface of the liquid crystal panel, which is technically difficult and has high production cost.
  • the prior art uses an optical lens array to enlarge an image to a framing screen frame area for seamless display, and the large use and precise alignment of the optical lens increases the manufacturing cost of the display screen. Moreover, the alignment of the optical lens necessarily has an error, which inevitably reduces the yield rate, makes the preparation process of the large-sized display device more complicated, and has low production efficiency and higher cost.
  • the object of the present invention is to provide a large-sized display screen, which aims to solve the problem that the large-size display screen has large splicing gaps, high manufacturing cost, low production efficiency and low yield.
  • a large-sized display screen includes a display front panel and a thin film transistor substrate stacked on each other, and a support plate is disposed on a side of the thin film transistor substrate facing away from the display front panel,
  • the thin film transistor substrate is formed by splicing a plurality of thin film transistor substrate units and carried and fixed by the support plate.
  • Another object of the present invention is to provide a method of manufacturing a large-sized display screen comprising the following steps:
  • the display front panel and the support plate with the thin film transistor substrate are assembled into a display screen.
  • Another object of the present invention is to provide a method of manufacturing a large-sized liquid crystal display comprising the following steps:
  • It is still another object of the present invention to provide a method for fabricating large-sized active-driven organic electroluminescence ( The AMOLED) display method includes the following steps:
  • the drive circuit is assembled to obtain an active drive organic electroluminescent display.
  • the drive circuit is assembled to obtain an active drive organic electroluminescent display.
  • the thin-film transistor substrate used in the large-size display screen provided by the invention is formed by splicing a plurality of thin film transistor substrate units, and the display front plate and the support plate of the single structure (non-splicing structure) are not directly assembled and assembled as in the conventional method.
  • the display screen can avoid the splicing gap caused by the display frame border or the adhesive glue and the sealant when directly splicing the display screen; and the high-quality thin film transistor substrate has a high yield rate, so that the directly spliced large-size thin film transistor substrate
  • the yield rate is much higher than that of directly manufacturing a single-chip thin-film transistor substrate, so that the present invention can improve the production efficiency of a large-sized display screen and greatly reduce the cost; and, in addition, the conventional structure that uses various optical systems to eliminate the splicing gap. In comparison, the cost is saved, the influence of the lens alignment accuracy on the display effect is avoided, and the yield rate of the large-size splicing screen is improved.
  • the seamless splicing can be realized, on the other hand, the production efficiency and the yield rate can be improved, and the cost is saved, which is suitable for mass production of large-size display screens. .
  • Figure 1 is a cross-sectional view of a large-sized display screen provided by the present invention.
  • FIG. 2 is a flow chart showing the manufacture of a large-sized display screen provided by the present invention.
  • FIG. 3 is a schematic structural view of a large-size display manufacturing process in accordance with FIG. 2;
  • FIG. 4 is a cross-sectional view of a large-size liquid crystal display panel according to a first embodiment of the present invention
  • FIG. 5 is a flow chart of manufacturing a large-size liquid crystal display panel according to a first embodiment of the present invention
  • FIG. 6 is a cross-sectional view of a large-size AMOLED display screen according to a second embodiment of the present invention.
  • FIG. 7 is a flow chart showing the manufacture of a large-size AMOLED display screen according to a second embodiment of the present invention.
  • FIG. 8 is a cross-sectional view of a large-size AMOLED display screen according to a third embodiment of the present invention.
  • FIG. 9 is a flow chart showing the manufacture of a large-size AMOLED display screen according to a third embodiment of the present invention.
  • the large-size display screen mainly includes a display front panel 1 and a thin film transistor substrate 2 stacked on each other, and a support panel 3 is disposed on a side of the thin film transistor substrate 2 facing away from the display front panel 1 , wherein
  • the thin film transistor substrate 2 is formed by splicing a plurality of thin film transistor substrate units 21 and carried and fixed by the support plate 3.
  • the display front panel 1 in the large-sized display screen may have various types such as liquid crystal display, organic electroluminescence (OLED) display, and the like.
  • the light-emitting control unit 11 and a transparent front panel 12 are required, and the light-emitting control unit 11 may include a filter 111 (the liquid crystal display must be configured with a filter, and the OLED display may be based on Actually, it is necessary to configure or not to configure a filter for color and intensity distribution of the light emitted from the light-emitting control unit 11 to output an image.
  • the filter 111 is attached to the surface of the transparent front plate 12.
  • the filter 111 can be generally made large in size without splicing, but the filter 111 can also be spliced by a plurality of filter units as in the case of the thin film transistor substrate 2 as necessary.
  • the thin film transistor substrate 2 is a spliced structure, and other components such as the display front plate 1, the support plate 3, and the like are non-spliced structures, that is, a single structure.
  • other components such as the display front plate 1, the support plate 3, and the like are non-spliced structures, that is, a single structure.
  • a plurality of small-sized thin film transistor substrate units 21 are directly spliced into a thin film transistor substrate 2 of a desired size, and the display front panel 1 and the support panel 3 of a single structure are disposed, instead of directly splicing a complete display screen as in the conventional method.
  • the splicing gap generated by the display frame or the adhesive and the sealant can be effectively avoided when directly splicing the display screen; and the yield of the small-sized thin film transistor substrate is high, so that the large-sized thin film transistor substrate directly spliced has a good yield It is higher than directly manufacturing a single-chip thin-film transistor substrate, so that the invention can improve the production efficiency of a large-sized display screen and greatly reduce the cost; in addition, compared with the conventional structure using various optical systems to eliminate the splicing gap, the saving The cost avoids the influence of the lens alignment accuracy on the display effect, and improves the yield of the large-size splicing screen.
  • the large size display can be manufactured by the following method, as shown in Figures 2 and 3:
  • step S001 a substrate 211 is selected, and a plurality of thin film transistor arrays 212 are prepared on the substrate 211; as shown in the diagram (A) in FIG.
  • the thin film transistor array 212 of the corresponding size is prepared according to the size of the pre-spliced thin film transistor substrate unit 21, and the plurality of thin film transistor arrays 212 are independently attached to the substrate 211.
  • step S002 the substrate 211 is cut, and the dicing lines are aligned with the edges of the thin film transistor array 212 to be spliced, and a plurality of thin film transistor substrate units 21 each having a thin film transistor array 212 are obtained; as shown in FIG. B).
  • the substrate 211 is cut along the edge of the thin film transistor array 212 to be spliced by the dicing apparatus, and each of the obtained thin film transistor substrate units 21 is provided with a thin film transistor array 212.
  • the cutting device can select a laser cutting machine, and the laser cutting method can achieve the cutting precision of the order of micrometers without polishing, and the high-precision cutting surface will become the subsequent mosaic surface.
  • a support plate 3 is selected, and a plurality of thin film transistor substrate units 21 are spliced to each other along the cutting surface thereof on the support plate 3 to form a thin film transistor substrate 2; as shown in the diagram (C) in FIG.
  • the plurality of thin film transistor substrate units 21 can be spliced according to the actual required size, and the size of the spliced thin film transistor substrate 2 can meet the needs of a large-sized display screen.
  • step S004 the display front panel 1 is made
  • step S005 the display front panel 1 and the support plate 3 with the thin film transistor substrate 2 are assembled into a display screen.
  • Figure 1 the display front panel 1 and the support plate 3 with the thin film transistor substrate 2 are assembled into a display screen.
  • the display screen of a desired size can be cut by a suitable cutting process.
  • the order of the display front panel 1 and the fabrication of the large-sized thin film transistor substrate 2 may not be strictly limited, and the fabrication of the front panel 1 may be performed simultaneously or at the same time as the fabrication of the thin film transistor substrate 2, as long as step S001 ⁇
  • the method of 003 fabricates the thin film transistor substrate 2, which shows that the acquisition of the front plate 1 and its combination with the thin film transistor substrate 2 are not strictly limited.
  • the above method obtains the large-sized thin film transistor substrate 2 by splicing the thin film transistor substrate unit 21, thereby avoiding direct splicing of the small-sized display screen, thereby avoiding the splicing gap caused by the display frame border or the adhesive glue and the sealant;
  • the method only needs to splicing the thin film transistor substrate unit 21, which is easier to implement than the process of directly splicing the display screen, and has high production efficiency; in addition, the yield is higher than the conventional method of eliminating the splicing gap by using the lens, and Reduced costs.
  • the display mode of the large-size display screen is various.
  • the core structure of the light-emitting control unit 11 is a liquid crystal layer.
  • the core structure of the light-emitting control unit 11 is an OLED light-emitting layer.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • Fig. 4 is a cross-sectional view showing a large-sized display screen according to a first embodiment of the present invention, and for convenience of explanation, only parts related to the present embodiment are shown.
  • the large-sized display panel includes a display front panel 1 and a thin film transistor substrate 2 which are laminated on each other, and the thin film transistor substrate 2 is formed by splicing a plurality of thin film transistor substrate units 21 and carried and fixed by a support plate 3.
  • the display front panel 1 adopts a liquid crystal display front panel, and includes a light-emitting control unit 11 composed of a filter 111, a lower alignment film 112, a liquid crystal layer 113, an upper alignment film 114, and a transparent conductive layer 115, on the light-emitting side of the light-emitting control unit 11.
  • a transparent front plate 12 is provided, and the filter 111 is attached to the light incident side of the transparent front plate 12.
  • the large-size display screen sequentially includes, in the direction of the image output, a lower polarizer-support plate-thin film transistor substrate-lower alignment film-liquid crystal layer-upward alignment film-transparent conductive layer-filter-transparent front plate- Upper polarizer.
  • the filter 111 can also be formed by splicing a plurality of filter units.
  • the large-size liquid crystal display splices a plurality of small-sized thin film transistor substrate units into a thin film transistor substrate of a desired size, and then assembled into a large-sized display with a liquid crystal display front plate and a support plate of a single structure.
  • the screen avoids the splicing gap generated by the adhesive of the liquid crystal panel when directly splicing the liquid crystal display; and directly splicing the small-sized thin film transistor substrate unit has a higher yield rate than directly preparing the single-thickness thin film transistor substrate of the same size, and further The yield and production efficiency of the large-size liquid crystal display are improved, and the cost is reduced.
  • the problem of low yield rate caused by low alignment accuracy of the optical lens when the optical system is used to eliminate the splicing gap is also solved.
  • the following provides a method of manufacturing a large-size liquid crystal display, as shown in FIG. 5:
  • step S101 a substrate is selected, and a plurality of thin film transistor arrays are prepared on the substrate;
  • step S102 the substrate is cut, and the dicing line is aligned with the edge of the thin film transistor array to be spliced, and a plurality of thin film transistor substrate units each having a thin film transistor array are obtained;
  • step S103 a support plate is selected, and a plurality of thin film transistor substrate units are spliced to each other along the cutting surface thereof on the support plate to form a thin film transistor substrate;
  • the substrate is preferably cut along the edge of the thin film transistor array to be spliced by a laser cutter without polishing, and the high-precision cutting surface is used as a subsequent splicing surface.
  • a support plate with a thin film transistor substrate of a desired size can be prepared, which is used to carry and fix the spliced thin film transistor substrate on the one hand, and is also used for assembly on the other hand.
  • the support plate of the rear display is also used for assembly on the other hand.
  • step S104 preparing a lower alignment film on the thin film transistor substrate
  • step S105 a transparent front plate is selected, and a filter, a transparent conductive layer and an upper alignment film are sequentially disposed on a surface of the transparent front plate;
  • step S106 a spacer is disposed on the upper alignment film or the lower alignment film;
  • step S107 the support plate and the transparent front plate are assembled, the upper alignment film and the lower alignment film are relatively bonded, and the liquid crystal is poured between the upward alignment film and the lower alignment film;
  • step S108 a polarizer is disposed on each of the transparent front plate and the support plate;
  • step S109 the driving circuit is assembled to obtain a liquid crystal display.
  • the preparation of the liquid crystal display front panel is completed, and finally, after step S109, a large-size liquid crystal display panel can be obtained.
  • the transparent front plate for fixing the filter can be used for the front plate of the display screen, and the transparent front plate and the support plate have a protective effect on the structure between the two.
  • the large-size liquid crystal display shown in FIG. 3 can be obtained by the above method, which realizes seamless splicing, and achieves the advantages of high yield, high yield, and low cost.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • Fig. 6 is a cross-sectional view showing a large-sized display screen (AMOLED display panel) according to a second embodiment of the present invention, and for convenience of explanation, only parts related to the present embodiment are shown.
  • the large-size AMOLED display panel includes a display front panel 1 and a thin film transistor substrate 2 which are superposed on each other.
  • the thin film transistor substrate 2 is formed by splicing a plurality of thin film transistor substrate units 21 and carried and fixed by a support plate 3.
  • the display front panel 1 uses an OLED display front panel, and includes a light-emitting control unit 11 including an OLED light-emitting layer 112 and a transparent front panel 12 disposed on the light-emitting side of the OLED light-emitting layer 112.
  • the light emitted by the OLED light-emitting layer is white light
  • the filter 111 can also be formed by splicing a plurality of filter units.
  • the OLED light emitting layer 112 is formed by splicing a plurality of OLED light emitting units 1121.
  • the OLED light emitting layer 112 and the thin film transistor substrate 2 are formed in the same cutting and splicing process, and the OLED light emitting unit 1121 and the thin film transistor substrate unit 21 are formed one by one. Registration setting.
  • a protective film 113 may be provided on the light-emitting side of the OLED light-emitting layer 112 and on the light-incident side of the transparent front plate 12.
  • the large-sized OLED display screen includes, in order of the image output direction, a support plate 3 - a thin film transistor substrate 2 - an OLED light emitting layer 112 - a protective film 113 - a filter 111 (optional) - a transparent front plate 12.
  • the large-size AMOLED display panel provided in this embodiment splices a plurality of thin film transistor substrate units 21 and OLED light emitting units 1121 into a thin film transistor and an OLED substrate of a desired size, and a transparent front plate 12 and a support plate 3 of a single structure.
  • the following provides a method of manufacturing a large-sized AMOLED display screen, as shown in FIG. 7:
  • step S201 a substrate is selected, a plurality of thin film transistor arrays are prepared on the substrate, and an OLED light emitting unit is disposed on each of the thin film transistor arrays;
  • step S202 the substrate is cut, and the cutting line is aligned with the edge of the thin film transistor array and the OLED light emitting unit to be spliced, and a plurality of substrate units each having one of the thin film transistor array and one OLED light emitting unit are obtained;
  • step S203 a support plate is selected, and a plurality of substrate units are spliced together along the cutting surface thereof on the support plate to form a thin film transistor and an OLED substrate;
  • the thin film transistor and the OLED substrate include the thin film transistor substrate 2 and the OLED light emitting layer 112 described above.
  • the substrate is preferably cut by the laser cutting machine along the edge of the thin film transistor array and the OLED light emitting unit to be spliced, without polishing after cutting, and the high-precision cutting surface is used as the subsequent splicing surface.
  • step S204 a transparent front plate is selected, and the support plate and the transparent front plate are assembled to make the thin film transistor and the OLED substrate and the transparent front plate relatively close to each other;
  • the thin film transistor and the OLED substrate are brought into close contact with the filter.
  • step S205 the driving circuit is assembled to obtain an AMOLED display screen.
  • the large-size AMOLED display screen shown in FIG. 6 can be obtained by the above method, thereby avoiding the splicing gap caused by the frame of the display screen when directly splicing the display unit, and achieving high yield, high yield and low cost. the goal of.
  • Embodiment 3 is a diagrammatic representation of Embodiment 3
  • Fig. 8 is a cross-sectional view showing a large-sized display screen (AMOLED display panel) according to a third embodiment of the present invention, and for convenience of explanation, only parts related to the present embodiment are shown.
  • the display panel includes a display front panel 1 and a thin film transistor substrate 2 which are superposed on each other.
  • the thin film transistor substrate 2 is formed by splicing a plurality of thin film transistor substrate units 21 and carried and fixed by a support plate 3.
  • the display front panel 1 still uses the OLED display front panel, and includes the light-emitting control unit 11 - the OLED light-emitting layer 112, and the transparent front panel 12 disposed on the light-emitting side of the OLED light-emitting layer 112.
  • the light emitted by the OLED light-emitting layer is white light, It is also necessary to provide a filter 111 on the light incident side of the transparent front plate.
  • the OLED light-emitting layer is a single-layer light-emitting layer formed on the thin film transistor substrate 2, and does not need to be cut and formed together with the thin film transistor substrate unit 21.
  • a protective film 113 may be provided on the light-emitting side of the OLED light-emitting layer 112 and on the light-incident side of the transparent front plate 12.
  • the large-sized OLED display screen includes, in order of the image output direction, a support plate 3 - a thin film transistor substrate 2 - an OLED light emitting layer 112 - a protective film 113 - a filter 111 (optional) - a transparent front plate 13.
  • the large-size AMOLED display panel provided in this embodiment splices a plurality of thin film transistor substrate units 21 into a thin film transistor substrate of a desired size, and is combined with the monolithic OLED light emitting layer 112, the transparent front plate 12, and the support plate 3.
  • the assembly is assembled into a large-sized display screen, which avoids the splicing gap generated by the display frame when directly splicing the display screen; and the yield rate is higher, the splicing precision is more easily controlled, the production efficiency and the yield rate are effectively improved, and the cost is reduced.
  • the following provides a method of manufacturing a large-sized AMOLED display screen, as shown in FIG. 9:
  • step S301 a substrate is selected, and a plurality of thin film transistor arrays are prepared on the substrate;
  • step S302 the substrate is cut, and the dicing line is aligned with the edge of the thin film transistor array to be spliced, and a plurality of thin film transistor substrate units each having one of the thin film transistor arrays are obtained;
  • step S303 a support plate is selected, and a plurality of thin film transistor substrate units are spliced to each other along the cutting surface thereof on the support plate to form a thin film transistor substrate;
  • step S304 preparing a monolithic OLED light-emitting layer on the thin film transistor substrate
  • step S305 a transparent front plate is selected, and the thin film transistor substrate with the OLED light emitting layer and the transparent front plate are assembled to make the OLED light emitting layer and the transparent front plate relatively close to each other;
  • step S306 the driving circuit is assembled to obtain an AMOLED display screen.
  • the large-size AMOLED display screen shown in FIG. 8 can be obtained by the above method, thereby avoiding the splicing gap caused by the frame of the display screen when directly splicing the display unit, and achieving high yield, high yield and low cost. the goal of.
  • the above embodiment only discloses a seamless splicing method of the liquid crystal display and the AMOLED display, but the invention is not limited to the liquid crystal display and the AMOLED display, as long as the spliced thin film transistor substrate and other single structural components are assembled.
  • the large size display screens are all within the scope of the present invention.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un écran d'affichage de grande taille et son procédé de fabrication. L'écran d'affichage comporte un panneau avant d'affichage (1) et un substrat TFT (2) qui se recouvrent l'un par rapport à l'autre. Une plaque de support (3) est disposée d'un côté, à l'opposé du panneau avant d'affichage (1), du substrat TFT (2). Le substrat TFT (2) est présenté en pavés par de multiples unités de substrat TFT (21) et est supporté et fixé par la plaque de support (3). Le panneau avant d'affichage (1) et la plaque de support (3) sont en une structure monomère. Le panneau d'affichage de grande taille évite les espaces de pavage causés par les bords de l'écran d'affichage ou les limites d'adhésif ou de produits d'étanchéité lors d'un affichage pavé direct. Le rendement des substrats TFT de grande taille en pavés est bien supérieur par rapport aux substrats TFT monoblocs qui ont la même taille et qui sont fabriqués directement, ceci améliorant considérablement le rendement de la production des écrans d'affichage de grande taille et réduisant les coûts. De plus, si l'on compare avec la structure dans laquelle les espaces de pavage sont éliminés en utilisant un système optique, le panneau d'affichage de grande taille réduit les coûts et augmente le rendement.
PCT/CN2012/081186 2012-09-10 2012-09-10 Écran d'affichage de grande taille et son procédé de fabrication WO2014036736A1 (fr)

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PCT/CN2012/081186 WO2014036736A1 (fr) 2012-09-10 2012-09-10 Écran d'affichage de grande taille et son procédé de fabrication
CN201280001478.5A CN103797531A (zh) 2012-09-10 2012-09-10 一种大尺寸显示屏及其制造方法

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CN107589578A (zh) * 2017-10-31 2018-01-16 武汉华星光电技术有限公司 拼接显示器及其制造方法
CN111048656A (zh) * 2017-09-04 2020-04-21 首尔半导体株式会社 显示装置及该显示装置的制造方法
CN111968499A (zh) * 2019-05-20 2020-11-20 元太科技工业股份有限公司 拼接显示装置及其制造方法

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