WO2014032415A1 - 功率开关管的驱动方法和装置 - Google Patents

功率开关管的驱动方法和装置 Download PDF

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Publication number
WO2014032415A1
WO2014032415A1 PCT/CN2013/071567 CN2013071567W WO2014032415A1 WO 2014032415 A1 WO2014032415 A1 WO 2014032415A1 CN 2013071567 W CN2013071567 W CN 2013071567W WO 2014032415 A1 WO2014032415 A1 WO 2014032415A1
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WO
WIPO (PCT)
Prior art keywords
driving
field effect
effect transistor
transformer
signal
Prior art date
Application number
PCT/CN2013/071567
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English (en)
French (fr)
Inventor
刘旭君
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to EP13731653.5A priority Critical patent/EP2725693B1/en
Publication of WO2014032415A1 publication Critical patent/WO2014032415A1/zh
Priority to US14/224,295 priority patent/US9680467B2/en
Priority to US15/595,569 priority patent/US10411700B2/en

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/689Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
    • H03K17/691Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H02M1/096Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the power supply of the control circuit being connected in parallel to the main switching element
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/28Modifications for introducing a time delay before switching
    • H03K17/288Modifications for introducing a time delay before switching in tube switches

Definitions

  • the present invention relates to the field of power supplies, and in particular, to a method and apparatus for driving a power switch tube. Background technique
  • the driving chip directly drives the power switch tube to make the loss of the driver chip very large.
  • FIG. 1 is a schematic diagram of the prior art driving the chip to drive the power switch tube, and the output end of the driving chip is connected to the gate of the power switch tube.
  • 1 (b) is a waveform diagram of a driving signal input by the driving chip for the power switching tube.
  • the disadvantage is that the driving chip has large loss and low reliability, which is disadvantageous for the power conversion frequency. Summary of the invention
  • the embodiment of the invention provides a driving method and device for a power switch tube, which solves the problems of large inrush current, large loss of driving chip and poor reliability in the prior art, realizes low loss driving of the power switch tube, and improves reliability.
  • an embodiment of the present invention provides a driving device for a power switch tube, where the device includes: the input unit is connected to the driving unit, and is configured to input a group of driving signals for the driving unit,
  • the set of driving signals includes a first driving signal, a second driving signal, a third driving signal, and a fourth driving signal, the first driving signal and the second driving signal are complementary signals, and the first driving a dead zone exists between the signal and the second driving signal, and the first FET driven by the first driving signal and the second FET driven by the second driving signal implement zero voltage switching;
  • the third driving signal and the fourth driving signal are complementary signals, and the a dead zone exists between the three driving signals and the fourth driving signal, and the third field effect transistor driven by the third driving signal and the fourth field effect transistor driven by the fourth driving signal realize zero voltage switching;
  • the phase difference between the first driving signal and the third driving signal is 180 degrees, and the first field effect transistor and the third field effect transistor are alternately turned on; the second driving signal and the The fourth driving signal has a phase difference
  • an embodiment of the present invention provides a driving device for a power switch tube, where the device includes: the input unit is connected to the driving unit, and is configured to input a set of driving signals for the driving unit;
  • the driving unit includes a plurality of field effect transistors for controlling states of the plurality of FETs according to the set of driving signals input by the input unit to power the field windings of the transformer; Transformer, connected to the driving unit and the rectifying unit, having a specified magnetizing inductance for storing energy, and inputting the excitation end of the transformer into the control end of the power switch tube according to the stored energy Driving a voltage signal, or inputting a driving voltage signal to the control terminal of the power switching tube through the rectifying unit by using an induced voltage induced by the output winding of the transformer to the field winding, and implementing zero voltage for the plurality of FETs
  • the rectifier unit includes at least one rectifier, and the rectifier includes a rectifier switch and the rectifier switch A control circuit for the output winding of the transformer to rectified
  • an embodiment of the present invention provides a driving method of a power switch tube, where the method includes: charging a field winding of a transformer according to an input driving signal, and storing energy for the transformer;
  • the excitation winding of the transformer inputs a driving voltage signal to the control end of the power switching tube, or the driving voltage induced by the output winding of the transformer to the excitation winding is a driving voltage signal of the control end of the power switching tube,
  • the transformer periodically stores and releases energy, and causes a zero voltage switch of the FET driven FET according to the change in the transformer energy and the change in the set of drive signals.
  • the method and apparatus provided by the embodiments of the present invention power up the excitation winding of the transformer according to the input set of driving signals; input the driving voltage signal to the control end of the power switching tube through the excitation winding of the transformer, or The induced voltage induced to the field winding by the output winding of the transformer inputs a drive voltage signal to the control terminal of the power switch.
  • FIG. 1 is a schematic diagram of a driving chip driving power switch tube and a waveform diagram of a driving signal in the prior art.
  • FIG. 2 is a schematic diagram of a driving device of a power switch tube according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a typical application of a power switch tube driving device according to an embodiment of the present invention
  • FIG. 4 is a timing diagram of driving signals of respective field effect transistors in a driving device for a power switch tube according to an embodiment of the present invention
  • FIG. 5 is a timing diagram of driving voltage signals provided for respective power switching tubes based on the driving signals shown in FIG. 3 in a driving device for a power switching tube according to an embodiment of the present invention
  • FIG. 6 is a schematic diagram of another driving device for a power switch tube according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram of a typical application of a driving device for a power switch tube according to an embodiment of the present invention
  • FIG. 8 is a timing diagram of driving voltage signals provided for respective power switching tubes based on the driving signals shown in FIG. 3 in a driving device for a power switching tube according to an embodiment of the present invention
  • FIG. 9 is a schematic diagram of a self-driven rectifying device for finishing output of an output winding in a driving device of a power switch tube according to an embodiment of the present invention.
  • FIG. 10 is a schematic diagram of a drive rectification device for rectifying an output of an output winding in a driving device of a power switch tube according to an embodiment of the present disclosure
  • FIG. 1 is a flowchart of a method for driving a power switch tube according to an embodiment of the present invention. detailed description
  • the invention discloses a driving method and device for a power switch tube, which powers a field winding of a transformer according to an input set of driving signals; and inputs a driving voltage to a control end of the power switch tube through the field winding of the transformer A signal, or an induced voltage induced to the field winding by an output winding of the transformer, inputs a drive voltage signal to a control terminal of the power switch. Therefore, the problem that the driving voltage signal has a large inrush current is solved, and the low-loss driving of the power switching tube is realized.
  • FIG. 2 is a schematic diagram of a driving device of a power switch tube according to an embodiment of the present invention. As shown in FIG. 2, the embodiment includes an input unit 201, a driving unit 202, a transformer 203, and a power switch tube 204.
  • the input unit 201 is connected to the driving unit 202, and a set of drivers can be input to the driving unit 202. Dynamic signal.
  • the set of driving signals may include: a first driving signal, a second driving signal, a third driving signal, and a fourth driving signal.
  • the first driving signal and the second driving signal are complementary signals, and there is a dead zone between the first driving signal and the second driving signal, that is, the time when the first driving signal and the second driving signal are simultaneously at a low level, Therefore, when the first driving signal or the second driving signal changes from a low level to a high level, the first field effect transistor controlled by the first driving signal or the second field effect transistor controlled by the second driving signal realizes zero voltage.
  • the switch greatly reduces the driving loss; the third driving signal and the fourth driving signal are complementary signals, and there is a dead zone between the third driving signal and the fourth driving signal, that is, the third driving signal and the fourth driving signal exist simultaneously When the time is low, it is ensured that the third driving signal or the fourth driving signal is controlled by the third driving signal when the third driving signal or the fourth driving signal changes from low level to high level.
  • the phase difference between the first driving signal and the third driving signal is 180 degrees, that is, the timing difference
  • the period of the first field effect transistor and the third field effect transistor are alternately turned on
  • the phase difference between the second driving signal and the fourth driving signal is 180 degrees, that is, the timing difference is half a cycle, and the second field effect transistor is used.
  • the fourth field effect transistor is alternately turned on.
  • the first driving signal is input to the gate of the first FET in the driving unit 202
  • the second driving signal is input to the gate of the second FET in the driving unit 202
  • the third driving signal is input into the driving unit 202.
  • the gate of the third FET, the fourth driving signal is input to the gate of the fourth FET of the driving unit 202; that is, the first driving signal, the second driving signal, the third driving signal, and the fourth input by the input unit 201
  • the driving signals are respectively used to control the on or off states of the first field effect transistor, the second field effect transistor, the third field effect transistor, and the fourth field effect transistor.
  • the driving unit 202 is configured to power the field winding of the transformer according to a set of driving signals input by the input unit 201.
  • the driving unit 102 includes: a first field effect transistor, a second field effect transistor, a third field effect transistor, and a fourth field effect transistor.
  • the driving unit 102 may further include: a DC power source and a capacitor.
  • the drain of the first FET is connected to the anode of the DC power source, and the first field effect transistor
  • the source is connected to the drain of the second field effect transistor and one end of the capacitor, and the gate of the first field effect transistor is connected to the input unit 201 for receiving the first driving signal output by the input unit 201;
  • the source of the effect transistor is grounded, the gate of the second FET is connected to the input unit 201, and is configured to receive the second driving signal output by the input unit 201;
  • the drain of the third FET is connected to the anode of the DC power supply
  • the source of the third field effect transistor is connected to the drain of the fourth field effect transistor and one end of the field winding of the transformer; the gate of the third field effect transistor is connected to the input unit 201 for receiving the output of the input unit 201
  • the third driving signal; the source of the fourth FET is grounded, the gate of the fourth FET is connected to the input unit 201, and is used for receiving the fourth driving signal output by the input unit 201; the
  • the driving unit 202 is a transformer according to the connection relationship between the excitation winding of the transformer and the driving unit.
  • the excitation winding is energized.
  • the first field effect transistor, the second field effect transistor, the third field effect transistor, and the fourth field effect transistor form a full bridge structure in a connection relationship, wherein one end of the excitation winding of the transformer is connected to a bridge of the full bridge structure At the midpoint of the arm, the other bridge arm is directly connected to the midpoint of the other bridge arm of the full bridge structure or to the midpoint of the other bridge arm of the full bridge structure by a capacitor.
  • the on or off states of the first field effect transistor, the second field effect transistor, the third field effect transistor, and the fourth field effect transistor also change, thereby flowing through the transformer The current in the field winding is changing, and the excitation winding of the transformer is energized.
  • a transformer 203 having a specified magnetizing inductance for storing energy, according to the stored energy, inputting a driving voltage signal to a control end of the power switching tube through the field winding of the transformer, or passing an output winding of the transformer
  • the induced voltage induced to the field winding is a drive voltage signal input to the control terminal of the power switch.
  • One end of the field winding of the transformer 203 is connected to the midpoint of one of the bridge arms of the full bridge structure in the drive unit 202, and the other end is connected to the midpoint of the other bridge arm of the full bridge structure in the drive unit 202.
  • the transformer 203 has a plurality of windings, at least one of the excitation windings L1, one Or multiple output windings, such as L2, L3 ... Ln, each end of the field winding can be connected with the control terminal of the power switch tube, that is, the two ends of each output winding can be directly connected to the power switch tube
  • the gate and the source are connected, whereby the first FET, the second FET, the third FET, and the fourth FET are guided by a change of a set of driving signals input by the input unit 201.
  • the voltage across the field winding of the transformer 203 also changes, and the current flowing through the field winding also changes, and the induced current and induced voltage generated by the output winding change. Therefore, the drive voltage signal of the power switch connected to the field winding and/or the output winding is also constantly changing;
  • a power switch tube 204 connected to the transformer, including a parasitic capacitor for forming a resonant circuit with the field winding, or the field winding and the output winding, for controlling the power switch
  • the drive voltage signal of the tube has a slow edge rate.
  • the power switch tube in this embodiment includes a power switch tube 1, a power switch tube 2, and a power switch tube n, due to the gate and source of each power switch tube.
  • a resonant circuit is formed between the output winding and the parasitic capacitance and parasitic resistance of the power switch tube, and the current in the field winding is not A sudden change occurs, so that the voltage across the output winding does not abruptly change, and the drive voltage signal supplied to the power switch connected to both ends of the output winding has a slower edge rate.
  • a resonant circuit is also formed between the parasitic capacitance and the parasitic resistance of the power switch tube connected to the excitation winding and the power switch tube.
  • the output winding is The resonant circuit can also be equivalent to the field winding, so that the driving voltage signal of the power switch connected to both ends of the field winding also has a slow edge rate, which greatly reduces the power consumption.
  • the driving device of the power switch tube energizes the excitation winding of the transformer according to the input set of driving signals; the excitation winding of the transformer is the control terminal input of the power switch tube
  • the drive voltage signal, or the induced voltage induced to the field winding by the output winding of the transformer, inputs a drive voltage signal to the control terminal of the power switch.
  • FIG. 3 is a schematic diagram of a typical application of a driving device for a power switch tube according to an embodiment of the present invention.
  • typical applications for this drive include: an input unit, a drive unit for driving the power switch, a drive transformer, a set of power switches, and a load.
  • the input unit is configured to input a first driving signal Vgs11, a second driving signal Vgs21, a third driving signal Vgs31, and a fourth driving signal Vgs41 to the driving unit.
  • the driving unit includes a first field effect transistor Q1 and a second field effect transistor Q2.
  • the driving transformer includes a field winding L1, a plurality of output windings L2, L3, L4, L9; and a set of power switch tubes includes a plurality of power switch tubes Q5, Q6, Q7, Q8, Q10, Q11, the driving voltage signals of the plurality of power switching tubes are provided by the driving transformer; the load may include the capacitor C2, the resistor R1 and the like.
  • the gate of the first field effect transistor Q1, the gate of the second field effect transistor Q2, the gate of the third field effect transistor Q3, and the gate of the fourth field effect transistor Q4 are connected to a set of driving signals.
  • the set of driving signals includes a first driving signal Vgs11, a second driving signal Vgs21, a third driving signal Vgs31, and a fourth driving signal Vgs41.
  • the first driving signal Vgsll is input to the first field effect transistor Q1
  • the second driving signal Vgs21 is input to the second field effect transistor Q2
  • the third driving signal Vgs31 is input to the third field effect transistor Q3,
  • the fourth driving signal Vgs41 is input to the fourth field.
  • the effect transistor Q4, the set of drive signals periodically changes, thereby controlling the state of the field effect transistors Q1, Q2, Q3, Q4 to be on or off.
  • the first driving signal Vgs11 and the second driving signal Vgs21 are complementary signals, and there is a dead zone between the first driving signal Vgs11 and the second driving signal Vgs21, that is, the first driving signal Vgs11 and the second driving signal Vgs21 exist simultaneously
  • the time is low, it is thereby ensured that the first field effect transistor Q1 or the second driver controlled by the first driving signal Vgs11 when the first driving signal Vgs11 or the second driving signal Vgs21 changes from a low level to a high level
  • the second field effect transistor Q2 controlled by the signal Vgs21 realizes zero voltage switching, which greatly reduces the driving loss
  • the third driving signal Vgs31 and the fourth driving signal Vgs41 are complementary signals, and the third driving signal Vgs31 and the fourth driving signal Vgs41
  • the third field effect transistor Q3 controlled by the third driving signal Vgs31 or the fourth field effect transistor Q4 controlled by the fourth driving signal Vgs41 realizes zero voltage switching, which greatly reduces the driving loss;
  • the phase difference of the driving signal Vgs31 is 180 degrees, that is, the timings are different by half a period, and the first field effect transistor Q1 and the third field effect transistor Q3 are alternately turned on;
  • the phase difference between the second driving signal Vgs21 and the fourth driving signal Vgs41 It is 180 degrees, that is, the timings are different by half a cycle, and the second field effect transistor Q2 and the fourth field effect transistor Q4 are alternately turned on.
  • the first field effect transistor Q1, the second field effect transistor Q2, the third field effect transistor Q3, and the fourth field effect transistor Q4 form a full bridge structure, wherein the drain of the first field effect transistor Q1 and the anode of the DC power source VI Connected, the source of the first field effect transistor Q1 is connected to the drain of the second field effect transistor Q2, the gate of the first field effect transistor is used to receive the first driving signal Vgsll; the source of the second field effect transistor Q2
  • the pole of the second FET Q2 is for receiving the second driving signal Vgs21; the drain of the third FET Q3 is connected with the anode of the DC power source VI, and the source of the third FET Q3 is The drain of the four field effect transistor Q4 is connected to one end of the field winding L1 of the transformer; the gate of the third field effect transistor is used to receive the third driving signal Vgs3; the source of the fourth field effect transistor Q4 is grounded, fourth The gate of the FET Q4 is used to receive the fourth drive signal Vgs
  • the driving unit 202 may further include a capacitor, one end of the capacitor Cb is connected to the source of the first field effect transistor Q1, the drain of the second field effect transistor Q2, and the other end is connected to the other end of the field winding L1 of the transformer 203. connection.
  • the voltage signal of one end of the excitation winding L1 of the driving transformer is Vgs5, and is connected to the gate of the power switch tube Q8 for supplying the driving voltage signal to the power switch tube Q8, and the voltage signal of the other end is Vgs6, connected to the gate of the power switch tube Q6.
  • the pole is used to provide a driving voltage signal for the power switch tube Q6.
  • the voltage signals at both ends of the output winding L2 are Vgsl and swz respectively, connected to the gate and source of the power switch tube Q5, and Vgsl-swz is used to provide a driving voltage signal for the power switch tube Q5, thereby forming L2 and the power switch tube Q5.
  • a resonant circuit which can also be equivalent to the field winding L1 and the power switch tube Q5 The resonant circuit between.
  • the voltage signals at both ends of the output winding L3 are Vgs4 and 0, respectively, connected to the gate and source of the power switch tube Q10, and Vgs4-0 is used to provide a driving voltage signal for the power switch tube Q10, thereby L3, the power switch tube Q9
  • a resonant circuit is formed, which can also be equivalent to a resonant circuit between the field winding L1 and the power switch tube Q10.
  • both ends Vgs2 and swy of the output winding L4 are respectively connected to the gate and the source of the power switch tube Q7, and a resonant circuit between the L4 and the power switch tube Q7 is formed, the equivalent between the field windings L1 and Q7 is formed. Resonant circuit.
  • the power switch Q11 Since the voltage signals across the output winding L9 are Vgs3 and 0, respectively, connected to the gate and source of the power switch Q11, Vgs3-0 is used to provide a driving voltage signal for the power switch Q11, thereby L9, the power switch Q11 A resonant circuit is formed, which can also be equivalent to a resonant circuit between the exciting winding L1 and the power switching transistor Q11. Since the typical application of the driving device has the above working relationship in the working process, the driving voltage signal provided by the excitation winding of the transformer for the control terminal of the power switching tube cannot be abruptly changed, but a driving voltage signal with a slow edge rate. The output voltage of the transformer through the induced voltage induced by the field winding can not be abruptly changed by the driving voltage signal input to the control terminal of the power switch tube, but a driving voltage signal with a slow edge rate.
  • FIG. 4 is a timing diagram of driving signals of respective FETs in a driving device for a power switch tube according to an embodiment of the present invention
  • FIG. 5 is a power supply according to an embodiment of the present invention
  • the time of the level; the third driving signal and the fourth driving signal are complementary signals, and there is a dead zone between the third driving signal and the fourth driving signal, that is, the third driving signal and the fourth driving signal are simultaneously low level
  • the phase difference between the first driving signal and the third driving signal is 180 degrees, that is, the timings are different by half a period; the phase difference between the second driving signal and the fourth driving signal is 180 degrees, that is, the timings are different by half a period. It can be seen from FIG. 5 that the driving voltage signals of the respective power switching tubes have a gentle edge rate, and between the excitation time of the first driving signal and the second driving signal, the field winding L1 and the power switching tube are formed.
  • the driving voltage signal Vgs 5 reaches the highest value, that is, when the voltage value VI of the DC voltage is reached.
  • the field effect transistor is not divided, and when the drive signal Vg s 31 changes from a low level to a high level or the drive signal Vgs 41 changes from a low level to a high level, a zero voltage switch is formed. It can be seen that the driving voltage signal of each power switch tube is a driving voltage signal with a slow edge rate without abrupt changes, which greatly reduces power consumption.
  • a transformer can be used for voltage conversion, and the input power and output power of the transformer are theoretically Equal, that is, the transformer can theoretically achieve voltage conversion without loss of power, providing the required voltage for the load.
  • the excitation winding of the transformer is powered; the excitation winding of the transformer inputs the driving voltage signal to the control end of the power switching tube, or the induced voltage induced by the output winding of the transformer to the excitation winding is the power switching tube
  • the control terminal inputs the drive voltage signal.
  • FIG. 6 is a schematic diagram of another driving device of a power switch tube according to an embodiment of the present invention. As shown in FIG. 6, the embodiment includes: an input unit 601, a driving unit 602, a transformer 603, and a rectifying unit.
  • the input unit 601 is coupled to the drive unit 602, and a set of drive signals can be input to the drive unit 602.
  • the set of driving signals may include 4 driving signals, and may also include two driving signals. If the driving unit 602 includes a full bridge structure composed of 4 FETs, the set of driving signals may include 4 driving signals. , respectively for driving the four FETs; if the drive unit 602 Including a half bridge structure consisting of one field effect transistor, the set of driving signals may include one driving signal for driving the two field effect transistors respectively.
  • the driving signal includes four driving signals, which are respectively used to drive each field effect transistor in the driving unit 602 as an example to describe the driving device.
  • the case where the driving signal includes two driving signals is no longer used. Detailed.
  • the set of driving signals may include: a first driving signal, a second driving signal, a third driving signal, and a fourth driving signal.
  • the first driving signal and the second driving signal are complementary signals, and there is a dead zone between the first driving signal and the second driving signal, that is, the time when the first driving signal and the second driving signal are simultaneously at a low level, Therefore, when the first driving signal or the second driving signal changes from a low level to a high level, the first field effect transistor controlled by the first driving signal or the second field effect transistor controlled by the second driving signal realizes zero voltage.
  • the switch greatly reduces the driving loss; the third driving signal and the fourth driving signal are complementary signals, and there is a dead zone between the third driving signal and the fourth driving signal, that is, the third driving signal and the fourth driving signal exist simultaneously When the time is low, it is ensured that the third driving signal or the fourth driving signal is controlled by the third driving signal when the third driving signal or the fourth driving signal changes from low level to high level.
  • the phase difference between the first driving signal and the third driving signal is 180 degrees, that is, the timing difference
  • the period of the first field effect transistor and the third field effect transistor are alternately turned on
  • the phase difference between the second driving signal and the fourth driving signal is 180 degrees, that is, the timing difference is half a cycle, and the second field effect transistor is used.
  • the fourth field effect transistor is alternately turned on.
  • the first driving signal is input to the gate of the first FET in the driving unit 602
  • the second driving signal is input to the gate of the second FET in the driving unit 602
  • the third driving signal is input to the driving unit 602.
  • the gate of the third FET, the fourth driving signal is input to the gate of the fourth FET of the driving unit 602; that is, the first driving signal, the second driving signal, the third driving signal, and the fourth input by the input unit 601
  • the driving signals are respectively used to control the on or off states of the first field effect transistor, the second field effect transistor, the third field effect transistor, and the fourth field effect transistor.
  • the driving unit 602 is configured to input a set of driving signals according to the input unit 601, which is a transformer The field winding is energized.
  • the driving unit 602 includes: a first field effect transistor, a second field effect transistor, a third field effect transistor, and a fourth field effect transistor.
  • the driving unit 602 further includes: a DC power source and a capacitor.
  • the drain of the first FET is connected to the anode of the DC power source, and the source of the first FET is connected to the drain of the second FET and one end of the capacitor, and the gate of the first FET
  • the pole is connected to the input unit 601 for receiving the first driving signal output by the input unit 601; the source of the second FET is grounded, and the gate of the second FET is connected to the input unit 601 for receiving input a second driving signal outputted by unit 601;
  • a drain of the third field effect transistor is connected to a positive pole of the direct current power source, a source of the third field effect transistor is connected to a drain of the fourth field effect transistor, and one end of the field winding of the transformer Connecting;
  • the gate of the third FET is connected to the input unit 601 for receiving the third driving signal output by the input unit 601; the source of the fourth FET is grounded, and the gate and the input of the fourth FET
  • the unit 601 is connected to receive the fourth driving signal output by the input unit 601
  • the driving unit 602 is a transformer according to the connection relationship between the excitation winding of the transformer and the driving unit. The excitation winding is energized.
  • the first field effect transistor, the second field effect transistor, the third field effect transistor, and the fourth field effect transistor form a full bridge structure in a connection relationship, wherein one end of the excitation winding of the transformer is connected to a bridge of the full bridge structure At the midpoint of the arm, the other bridge arm is directly connected to the midpoint of the other bridge arm of the full bridge structure or to the midpoint of the other bridge arm of the full bridge structure by a capacitor.
  • the on or off states of the first field effect transistor, the second field effect transistor, the third field effect transistor, and the fourth field effect transistor also change, thereby flowing through the transformer The current in the field winding is changing, and the excitation winding of the transformer is energized.
  • the transformer 603 is connected to the rectifying unit 604 and the driving unit 602, has a specified magnetizing inductance for storing energy, and inputs a driving voltage to the control end of the power switching tube through the excitation winding of the transformer according to the stored energy. Signal, or the output winding of the transformer The induced voltage induced by the field winding is input to the control terminal of the power switch tube through the rectifying unit to input a driving voltage signal, and the plurality of FETs are used to implement zero voltage switching.
  • One end of the field winding of the transformer 603 is connected to the midpoint of one of the bridge arms of the full bridge structure in the drive unit 602, and the other end is connected to the midpoint of the other bridge arm of the full bridge structure in the drive unit 602.
  • the transformer 603 has a plurality of windings, at least one of the field windings and one of the output windings. Each end of the field windings can be connected to the control terminal of the power switch tube, that is, the output ends of each output winding are rectified.
  • a rectifier of the unit 604 is connected to the gate and the source of the power switch tube.
  • the rectifier may be a rectifier switch for rectifying the voltage signal outputted from the output winding of the transformer 603, and using the rectified voltage signal as a a driving voltage signal of the power switching tube connected to the output winding.
  • a change of a set of driving signals input by the input unit 601, the first field effect transistor, the second field effect transistor, the third field effect transistor, and the fourth When the FET is turned on or off, the voltage across the field winding of the transformer 603 also changes, and the current flowing through the field winding also changes, and the induced current and induced voltage generated by the output winding occur. Variety. Therefore, the driving voltage signal of the power switching tube connected by the field winding is constantly changing, and the driving voltage signal of the power switching tube connected by the output winding through the rectifying unit 604 is constantly changing.
  • the rectifying unit 604 includes at least one rectifier, each rectifier includes a rectifying switch and a control circuit of the rectifying switch, and is used for rectifying an induced voltage induced by the output winding of the transformer to the exciting winding to obtain a driving voltage. signal.
  • the rectifying unit 604 includes one or more rectifiers, each of which is connected to the power switching tube via a rectifier.
  • the rectifier includes a rectifying switch and a control circuit of the rectifying switch.
  • the control circuit can control the on or off of the rectifying switch, thereby performing rectification processing on the induced voltage signal outputted from the output winding to obtain a unipolar driving voltage signal.
  • Driving a power switch with a unipolar drive voltage signal is less of a loss than driving a power switch with a bipolar drive voltage signal.
  • the method of rectifying the bipolar driving voltage signal into a unipolar driving voltage signal will be described in detail later, and will not be described here.
  • the power switch tube 605 is connected to the transformer and includes a parasitic capacitor, and the parasitic capacitor and the transformer form a resonant circuit for controlling the driving voltage signal of the power switch tube to have a slow edge rate.
  • the parasitic capacitance and parasitic capacitance of the output winding and the power switch tube are connected to the power switch tube connected to both ends of the output winding.
  • a resonant circuit is formed between the resistors, and the current in the field winding is not abruptly changed, so that the voltage across the output winding does not abruptly, and the driving voltage signal is supplied to the power switch tube connected to both ends of the output winding. There is a slower edge rate.
  • a resonant circuit is also formed between the parasitic capacitance and the parasitic resistance of the power switch tube connected to the excitation winding and the power switch tube.
  • the output winding is The resonant circuit can also be equivalent to the field winding, so that the driving voltage signal of the power switch connected to both ends of the field winding also has a slow edge rate, which greatly reduces the power consumption.
  • FIG. 7 is a schematic diagram of a typical application of a driving device for another power switch tube according to an embodiment of the present invention.
  • a typical application of the driving device includes a rectifying unit in addition to the input unit in FIG. 3, the driving unit for driving the power switching tube, a driving transformer, a set of power switching tubes, and a load.
  • the rectifying unit comprises a set of rectifiers, each set of rectifying switches comprises a rectifying switch, that is, the rectifying unit comprises a set of rectifying switches Q9, Q12, Q1 3, Q14 for outputting a voltage signal to an output winding of the driving transformer
  • the rectification process is performed, and the rectified voltage signal is used as a driving voltage signal of the power switch tube connected to the output winding.
  • the voltage signals at both ends of the output winding L2 of the driving transformer are Vg sl and swz, respectively, and the output of the output winding L2 is connected to a switch Q12 to rectify the output thereof, and the driving voltage signal obtained after the rectification process is connected
  • the gate and the source of the power switch tube Q5 are used to provide a driving voltage signal for the power switch tube Q5.
  • the diode of the Q12 is turned on, and the voltage across the L2 is applied to the power switch tube Q5.
  • the gate of the gate can be turned on by controlling the voltage at the gate of the input Q12.
  • the driving voltage signal of the power switch transistor Q5 is also lowered.
  • the Q12 cut-off can be controlled to provide a drive voltage signal to the power switch Q5 when the voltage of L1 is negative. This makes it possible to provide a unipolar driving voltage for the power switching transistor, which is lower than the loss of the bipolar driving voltage.
  • the output of the output winding L 3 can be rectified by a switch Q 1 3 , and the rectified driving voltage signal is connected to the gate and source of the power switch Q1 0 for power.
  • Switch Q1 0 provides a unipolar drive voltage signal to reduce losses.
  • the output of the output winding L4 can be rectified by a switch Q9, and the output of the output winding L9 can be rectified by a switch Q14, thereby providing a monopole for the power switch tubes Q7 and Q1 1 .
  • Sexual drive voltage signal can be provided.
  • FIG. 8 is a timing diagram of driving voltage signals provided for respective power switching tubes based on the driving signals shown in FIG. 4 in a driving device for a power switching tube according to an embodiment of the present invention. It can be seen from Fig. 8 that the driving voltage signals of the respective power switching tubes have a gentle edge rate, and the output voltage signals of the respective power switching tubes are unipolar by rectifying the output of the output windings. Driving the voltage signal greatly reduces power consumption.
  • the excitation winding of the transformer is energized according to a set of driving signals input, the driving voltage signal is input to the control terminal of the power switching tube through the excitation winding of the transformer, or the induced voltage is induced to the excitation winding through the output winding of the transformer. Input driving voltage for the control terminal of the power switch Signal.
  • the above embodiment describes a method for providing a unipolar driving voltage signal to a power switching tube by rectifying an output of an output winding of the driving transformer, and a rectifying method for rectifying the output of the output winding can be performed by self-driven
  • the mode or the mode of its driving is described below by a specific embodiment.
  • FIG. 9 is a schematic diagram of a self-driven rectifying device for finishing output of an output winding in a driving device of a power switch tube according to an embodiment of the present invention.
  • the self-driven rectifying device comprises a rectifying switch and a control circuit of the rectifying switch, wherein the rectifying switch is a switch K1, and the control circuit of the rectifying switch comprises a diode D8, a resistor R9, and a capacitor C5.
  • the anode of the diode D8 is connected to the upper end of the output winding L2, the end of R9, the gate of the power switch tube Qp, the cathode of the diode and the other end of the R9, and the capacitor C5.
  • One end of the switch K1 is connected to the gate; the other end of the capacitor C5 is connected to the source of the switch K1 and the source of the power switch Qp; and the drain of the switch K1 is connected to the lower end of the output winding L2.
  • the switch K1 is turned off, and the driving voltage is supplied to the power switch Qp when the voltage of the output winding L2 is blocked to a negative value. That is, the above-described self-driven rectifying means can realize that the output winding L2 supplies only the unipolar driving voltage to the power switching transistor Qp, and the power loss is drastically reduced.
  • FIG. 10 is a schematic diagram of a drive rectification device for rectifying an output of an output winding in a driving device of a power switch tube according to an embodiment of the present invention.
  • the self-driven rectifying device includes a rectifying switch and a control circuit of the rectifying switch, wherein the rectifying switch is a switch K1, and the control circuit of the rectifying switch is a control chip.
  • the control chip is connected to both ends of the output winding L2 and the gate of the switch K1; the upper end of the output winding L2 is connected to the gate of the power switch tube Qp; The drain is connected to the lower end of the output winding L2, and the source of the switch K1 is connected to the source of the power switch Qp.
  • the control chip detects the voltage across the output winding L2.
  • the control K1 When the upper end voltage is positive and the lower end voltage is negative, the control K1 is turned on; when the control chip detects that the upper end voltage of the output winding L2 is negative and the lower end voltage is positive
  • the control K1 is turned off, thereby enabling the output winding L2 to supply only the unipolar driving voltage to the power switching transistor Qp, which greatly reduces the power loss.
  • the driving switch in combination with the driving device for driving the self-driven rectifying device and the power switch tube provided by the present invention, can provide a unipolar driving voltage signal with a slow edge rate.
  • the power loss is reduced in magnitude and the reliability is improved.
  • FIG. 1 is a flowchart of a driving method of a power switch tube according to an embodiment of the present invention. As shown in FIG. 11, the embodiment specifically includes the following steps:
  • Step 1101 Apply power to a field winding of the transformer according to the input set of driving signals;
  • the set of driving signals includes a first driving signal, a second driving signal, a third driving signal, and a fourth driving signal, where the first The driving signal and the second driving signal are complementary signals, and there is a dead zone between the first driving signal and the second driving signal, and the first field effect transistor and the device driven by the first driving signal
  • the second FET driven by the second driving signal implements a zero voltage switch;
  • the third driving signal and the fourth driving signal are complementary signals, and the third driving signal and the a dead zone exists between the fourth driving signals, and the third FET driven by the third driving signal and the fourth FET driven by the fourth driving signal implement zero voltage switching;
  • the first driving The phase difference between the signal and the third driving signal is 180 degrees, and the first field effect transistor and the third field effect transistor are alternately turned on;
  • the second driving signal and the fourth driving signal are a phase difference of 180 degrees for alternately conducting a state of the second field effect transistor
  • the set of driving signals may include: a first driving signal, a second driving signal, a third driving signal, and a fourth driving signal.
  • the first driving signal and the second driving signal are complementary signals, and there is a dead zone between the first driving signal and the second driving signal, that is, the time when the first driving signal and the second driving signal are simultaneously at a low level, Therefore, when the first driving signal or the second driving signal changes from a low level to a high level, the first field effect transistor controlled by the first driving signal or the second field effect transistor controlled by the second driving signal realizes zero voltage.
  • the switch greatly reduces the driving loss; the third driving signal and the fourth driving signal are complementary signals, and there is a dead zone between the third driving signal and the fourth driving signal, that is, the third driving signal and the fourth driving signal exist simultaneously When the time is low, it is ensured that the third driving signal or the fourth driving signal is controlled by the third driving signal when the third driving signal or the fourth driving signal changes from low level to high level.
  • the phase difference between the first driving signal and the third driving signal is 180 degrees, that is, the timing difference
  • the period of the first field effect transistor and the third field effect transistor are alternately turned on
  • the phase difference between the second driving signal and the fourth driving signal is 180 degrees, that is, the timing difference is half a cycle, and the second field effect transistor is used.
  • the fourth field effect transistor is alternately turned on.
  • the first driving signal is input to the gate of the first FET
  • the second driving signal is input to the gate of the second FET
  • the third driving signal is input to the gate of the third FET
  • the fourth driving signal is input
  • the gate of the four field effect transistor that is, the first driving signal, the second driving signal, the third driving signal, and the fourth driving signal are respectively used to control the first field effect transistor, the second field effect transistor, the third field effect transistor, The on or off state of the fourth field effect transistor.
  • First field effect transistor, second field effect transistor, third field effect The upper tube and the fourth field effect tube form a full bridge structure in the connection relationship, wherein one end of the excitation winding of the transformer is connected to the midpoint of one bridge arm of the full bridge structure, and the other bridge arm is directly connected to the full bridge structure.
  • the midpoint of the other bridge arm is connected to the midpoint of the other bridge arm of the full bridge structure by a capacitor.
  • Step 1102 input a driving voltage signal to the control end of the power switching tube through the excitation winding of the transformer, or input a driving voltage signal to the control end of the power switching tube through the induced voltage induced by the output winding of the transformer to the excitation winding.
  • the transformer has a plurality of windings, wherein at least one of the field windings and one of the output windings, each end of the field windings can be connected to the control terminal of the power switch tube, that is, the two ends of each output winding can be directly Connected to the gate and source of the power switch tube, whereby the first field effect transistor, the second field effect transistor, the third field effect transistor, and the fourth field effect transistor are turned on according to a change of a set of driving signals Or the change of the off state, the voltage across the field winding of the transformer also changes, the current flowing through the field winding also changes, and the induced current and induced voltage generated by the output winding change. Therefore, the drive voltage signal of the power switch connected to the field winding and/or the output winding is also constantly changing.
  • the parasitic capacitance and parasitic capacitance of the output winding and the power switch tube are connected to the power switch tube connected to both ends of the output winding.
  • a resonant circuit is formed between the resistors, and the current in the field winding is not abruptly changed, so that the voltage across the output winding does not abruptly, and the driving voltage signal is supplied to the power switch tube connected to both ends of the output winding. There is a slower edge rate.
  • a resonant circuit is also formed between the parasitic capacitance and the parasitic resistance of the power switch tube connected to the excitation winding and the power switch tube.
  • the output winding is The resonant circuit can also be equivalent to the field winding, so that the driving voltage signal of the power switch tube connected to both ends of the field winding also has a slow edge rate, which is greatly Reduced power consumption.
  • the output voltage signal can be first rectified to obtain a unipolar driving voltage signal.
  • Using a unipolar drive voltage signal driving the power switch tube consumes less power than driving the power switch tube with a bipolar drive voltage signal.
  • the driving method of the power switch tube applies power to the excitation winding of the transformer according to the input set of driving signals; the driving voltage signal is input to the control end of the power switching tube through the excitation winding of the transformer, or through the transformer
  • the induced voltage induced by the output winding to the field winding is a drive voltage signal input to the control terminal of the power switch.
  • the first field effect transistor (Q1), the second field effect transistor (Q2), the third field effect transistor (Q3), and the fourth field effect transistor (Q4) in the above embodiments are all N-type field effect transistors.
  • the driving signal When the driving signal is low, the first field effect transistor (Q1), the second field effect transistor (Q 2 ), the third field effect transistor (Q 3 ), and the fourth field effect transistor (Q4) are turned off; when the driving signal is When high, the first field effect transistor (Q1), the second field effect transistor (Q 2 ), the third field effect transistor (Q 3 ), and the fourth field effect transistor (Q 4 ) are turned on.
  • the type of the FET is not necessarily an N-type transistor or a P-type transistor. It should be noted that those skilled in the art can obtain the schematic diagram of the driving device obtained according to the schematic diagram of the driving device provided in the above embodiments without any creative work, which is within the protection scope of the present invention.
  • RAM random access memory
  • ROM read only memory
  • electrically programmable ROM electrically erasable programmable ROM
  • registers hard disk, removable disk, CD-ROM, or any other form of storage known in the art. In the medium.

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Abstract

一种功率开关管的驱动方法和装置。该装置包括:输入单元(201)、驱动单元(202)、变压器(203)和功率开关管(204)。输入单元(201)与驱动单元(202)相连接,用于输入一组驱动信号。该组驱动信号包括第一驱动信号、第二驱动信号、第三驱动信号和第四驱动信号,其中第一驱动信号和第二驱动信号为互补信号,并且存在死区,用于实现零电压开关;第三驱动信号和第四驱动信号为互补信号,并且存在死区,用于实现零电压开关;第一驱动信号和第三驱动信号的相位差为180度;第二驱动信号和第四驱动信号的相位差为180度。驱动单元(202)用于为变压器(203)的励磁绕组加电。变压器用于为功率开关管(204)提供驱动电压信号。该装置实现了功率开关管的低损耗驱动。

Description

功率开关管的驱动方法和装置 技术领域
本发明涉及电源领域, 尤其涉及一种功率开关管的驱动方法和装置。 背景技术
随着电子技术的发展, 功率转换频率越来越高, 对于用功率开关管进行 电路开关的场合, 用驱动芯片直接驱动功率开关管的方式使得驱动芯片的损 耗非常大。
在现有技术下, 驱动芯片可以使用矩形波驱动功率开关管, 图 1 ) 为 现有技术先驱动芯片驱动功率开关管的示意图, 驱动芯片的输出端与功率开 关管的栅极相连接, 图 1 ( b ) 为驱动芯片为该功率开关管输入的驱动信号的 波形图, 其缺点为驱动芯片损耗大, 可靠性低, 不利于功率转换频率的提高。 发明内容
本发明实施例提供了一种功率开关管的驱动方法和装置, 以解决现有技 术中冲击电流大、 驱动芯片损耗大、 可靠性差的问题, 实现了功率开关管的 低损耗驱动, 并且提高了可靠性。
第一方面, 本发明实施例提供了一种功率开关管的驱动装置, 所述装置 包括: 所述输入单元, 与所述驱动单元相连接, 用于为所述驱动单元输入一 组驱动信号, 所述一组驱动信号包括第一驱动信号、 第二驱动信号、 第三驱 动信号、 第四驱动信号, 所述第一驱动信号和所述第二驱动信号为互补信号, 并且所述第一驱动信号和所述第二驱动信号之间存在死区, 用以所述第一驱 动信号驱动的第一场效应管和所述第二驱动信号驱动的第二场效应管实现零 电压开关; 所述第三驱动信号和所述第四驱动信号为互补信号, 并且所述第 三驱动信号和所述第四驱动信号之间存在死区, 用以所述第三驱动信号驱动 的第三场效应管和所述第四驱动信号驱动的第四场效应管实现零电压开关; 所述第一驱动信号和所述第三驱动信号的相位差为 180度, 用以所述第一场 效应管和所述第三场效应管交替导通; 所述第二驱动信号和所述第四驱动信 号的相位差为 180度, 用以所述第二场效应管的状态和所述第四场效应管交 替导通; 所述驱动单元, 包括所述第一场效应管、 所述第二场效应管、 所述 第三场效应管、 所述第四场效应管, 用于根据所述输入单元输入的所述一组 驱动信号, 为所述变压器的励磁绕组加电; 所述变压器, 具有指定的磁化电 感, 用以存储能量, 根据所述存储的能量, 通过所述变压器的所述励磁绕组 为所述功率开关管的控制端输入驱动电压信号, 或者通过所述变压器的输出 绕组对所述励磁绕组感应的感应电压为功率开关管的控制端输入驱动电压信 号; 所述功率开关管, 与所述变压器相连接, 包括寄生电容, 所述寄生电容 与所述变压器组成谐振电路, 用以控制所述功率开关管的所述驱动电压信号 具有緩慢的边沿速率。
第二方面, 本发明实施例提供了一种功率开关管的驱动装置, 所述装置 包括: 所述输入单元, 与所述驱动单元相连接, 用于为所述驱动单元输入一 组驱动信号; 所述驱动单元, 包括多个场效应管, 用于根据所述输入单元输 入的所述一组驱动信号, 控制所述多个场效应管的状态, 为所述变压器的励 磁绕组加电; 所述变压器, 与所述驱动单元和所述整流单元相连接, 具有指 定的磁化电感, 用以存储能量, 根据所述存储的能量通过所述变压器的所述 励磁绕组为功率开关管的控制端输入驱动电压信号, 或者将所述变压器的输 出绕组对所述励磁绕组感应的感应电压经过所述整流单元为功率开关管的控 制端输入驱动电压信号, 用以所述多个场效应管实现零电压开关; 所述整流 单元, 包括至少一个整流器, 所述整流器包括整流开关及所述整流开关的控 制电路, 用于对所述变压器的输出绕组对所述励磁绕组感应的感应电压进行 整流处理, 得到驱动电压信号; 所述功率开关管, 与所述变压器相连接, 包 括寄生电容, 所述寄生电容与所述变压器组成谐振电路, 用以控制所述功率 开关管的所述驱动电压信号具有緩慢的边沿速率。
第三方面, 本发明实施例提供了一种功率开关管的驱动方法, 所述方法 包括: 根据输入的一组驱动信号, 为变压器的励磁绕组加电, 用以所述变压 器存储能量; 通过所述变压器的所述励磁绕组为功率开关管的控制端输入驱 动电压信号, 或者通过所述变压器的输出绕组对所述励磁绕组感应的感应电 压为功率开关管的控制端输入驱动电压信号, 用以所述变压器周期性地存储 和释放能量, 并且根据所述变压器能量的变化以及所述一组驱动信号的变化 使得所述驱动信号驱动的场效应管实现零电压开关。
因此, 本发明实施例提供的方法和装置, 根据输入的一组驱动信号, 为 变压器的励磁绕组加电; 通过所述变压器的所述励磁绕组为功率开关管的控 制端输入驱动电压信号, 或者通过所述变压器的输出绕组对所述励磁绕组感 应的感应电压为功率开关管的控制端输入驱动电压信号。 通过应用本发明实 施例提供的方法和装置, 可以实现功率开关管的低损耗驱动, 并且提高了可 靠性。 附图说明
图 1 为现有技术下驱动芯片驱动功率开关管的示意图及驱动信号的波形 图
图 2为本发明实施例提供的一种功率开关管的驱动装置示意图; 图 3为本发明实施例提供的一种功率开关管的驱动装置的典型应用示意 图;
图 4为本发明实施提提供的一种功率开关管的驱动装置中各个场效应管 的驱动信号的时序图;
图 5为本发明实施例提供的一种功率开关管的驱动装置中基于图 3所示 的驱动信号而为各个功率开关管提供的驱动电压信号的时序图; 图 6为本发明实施例提供的另一种功率开关管的驱动装置示意图; 图 7为本发明实施例提供的又一功率开关管的驱动装置的典型应用示意 图;
图 8为本发明实施例提供的一种功率开关管的驱动装置中基于图 3所示 的驱动信号而为各个功率开关管提供的驱动电压信号的时序图;
图 9为本发明实施例提供的一种功率开关管的驱动装置中对输出绕组的 输出进行整理处理的自驱整流装置示意图;
图 1 0为本发明实施例提供的一种功率开关管的驱动装置中对输出绕组的 输出进行整流处理的它驱整流装置示意图;
图 1 1为本发明实施例提供的一种功率开关管的驱动方法的流程图。 具体实施方式
为使本发明实施例的目的、 技术方案和优点更加清楚, 下面将结合本发 明实施例中的附图, 对本发明实施例中的技术方案进行清楚、 完整地描述, 显然, 所描述的实施例是本发明一部分实施例, 而不是全部的实施例。 基于 本发明中的实施例, 本领域普通技术人员在没有作出创造性劳动前提下所获 得的所有其他实施例, 都属于本发明保护的范围。
本发明公开了一种功率开关管的驱动方法和装置, 根据输入的一组驱动 信号, 为变压器的励磁绕组加电; 通过所述变压器的所述励磁绕组为功率开 关管的控制端输入驱动电压信号, 或者通过所述变压器的输出绕组对所述励 磁绕组感应的感应电压为功率开关管的控制端输入驱动电压信号。 由此解决 了驱动电压信号冲击电流大的问题, 实现了功率开关管的低损耗驱动。
图 2 为本发明实施例提供的一种功率开关管的驱动装置示意图。 如图 2 所示, 本实施例包括输入单元 201、 驱动单元 202、 变压器 203、 功率开关管 204。
输入单元 201与驱动单元 202相连接, 可以为驱动单元 202输入一组驱 动信号。
具体地, 这一组驱动信号可包括: 第一驱动信号、 第二驱动信号、 第三 驱动信号、 第四驱动信号。 其中, 第一驱动信号和第二驱动信号为互补信号, 并且第一驱动信号和第二驱动信号之间存在死区, 即第一驱动信号和第二驱 动信号存在同时为低电平的时间, 由此可以保证在第一驱动信号或第二驱动 信号从低电平变为高电平时, 第一驱动信号控制的第一场效应管或第二驱动 信号控制的第二场效应管实现零电压开关, 大幅度地降低驱动损耗; 第三驱 动信号和第四驱动信号为互补信号, 并且第三驱动信号和第四驱动信号之间 存在死区, 即第三驱动信号和第四驱动信号存在同时为低电平的时间, 由此 可以保证在第三驱动信号或第四驱动信号从低电平变为高电平时, 第三驱动 信号控制的第三场效应管或第四驱动信号控制的第四场效应管实现零电压开 关, 大幅度地降低驱动损耗; 第一驱动信号和第三驱动信号的相位差为 180 度, 即时序相差半个周期, 用以第一场效应管和第三场效应管交替导通; 第 二驱动信号和第四驱动信号的相位差为 180度, 即时序相差半个周期, 用以 第二场效应管和第四场效应管交替导通。
其中, 第一驱动信号输入驱动单元 202 中的第一场效应管的栅极, 第二 驱动信号输入驱动单元 202 中的第二场效应管的栅极, 第三驱动信号输入驱 动单元 202 中的第三场效应管的栅极, 第四驱动信号输入驱动单元 202的第 四场效应管的栅极; 即输入单元 201 输入的第一驱动信号、 第二驱动信号、 第三驱动信号、 第四驱动信号分别用来控制第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管的导通或截止状态。
驱动单元 202用于根据输入单元 201输入的一组驱动信号, 为变压器的 励磁绕组加电。 其中, 驱动单元 1 02 包括: 第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管。
可选地, 驱动单元 1 02还可以包括: 直流电源、 电容。
具体地, 第一场效应管的漏极与直流电源的正极相连接, 第一场效应管 的源极与第二场效应管的漏极、 电容的一端相连接, 第一场效应管的栅极与 输入单元 201相连接, 用于接收输入单元 201输出的第一驱动信号; 第二场 效应管的源极接地, 第二场效应管的栅极与输入单元 201 相连接, 用于接收 输入单元 201 输出的第二驱动信号; 第三场效应管的漏极与直流电源的正极 相连接, 第三场效应管的源极与第四场效应管的漏极、 变压器的励磁绕组的 一端相连接; 第三场效应管的栅极与输入单元 201 相连接, 用于接收输入单 元 201 输出的第三驱动信号; 第四场效应管的源极接地, 第四场效应管的栅 极与输入单元 201相连接, 用于接收输入单元 201输出的第四驱动信号; 电 容的另一端与变压器的励磁绕组的另一端相连接。 由此, 驱动单元 202在第 一驱动信号、 第二驱动信号、 第三驱动信号、 第四驱动信号按照预设频率发 生变化时, 根据上述的变压器的励磁绕组与驱动单元的连接关系, 为变压器 的励磁绕组加电。
第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管在连接关 系上组成了一个全桥结构, 其中变压器的励磁绕组的一端连接在该全桥结构 的一个桥臂的中点, 另一个桥臂直接连接在全桥结构的另一个桥臂的中点或 者通过一个电容连接在全桥结构的另一个桥臂的中点。 随着一组驱动信号的 变化, 第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管的导通 或截止状态也在随之变化, 由此流过变压器的励磁绕组的电流在发生变化, 实现了为变压器的励磁绕组加电。
变压器 203 ,具有指定的磁化电感,用以存储能量,根据所述存储的能量, 通过所述变压器的所述励磁绕组为功率开关管的控制端输入驱动电压信号, 或者通过所述变压器的输出绕组对所述励磁绕组感应的感应电压为功率开关 管的控制端输入驱动电压信号。变压器 203的励磁绕组的一端接驱动单元 202 中全桥结构的一个桥臂的中点, 另一端接驱动单元 202 中全桥结构的另一个 桥臂的中点。
具体地, 该变压器 203拥有多个绕组, 其中至少一个励磁绕组 Ll、 一个 或多个输出绕组, 如 L2、 L 3 ... Ln , 励磁绕组的每一端都可以与功率开关管的 控制端即栅极相连接, 每个输出绕组的两端可以分别直接与功率开关管的栅 极和源极相连接, 由此随着输入单元 201 输入的一组驱动信号的变化, 第一 场效应管、 第二场效应管、 第三场效应管、 第四场效应管的导通或截止状态 的变化, 变压器 203 的励磁绕组两端的电压也在发生变化, 流过励磁绕组的 电流也在发生变化, 输出绕组所产生的感应电流、 感应电压都随之发生变化。 因此与励磁绕组和 /或输出绕组相连接的功率开关管的驱动电压信号也在不 断发生变化;
功率开关管 204 , 与所述变压器相连接, 包括寄生电容, 所述寄生电容用 于与所述励磁绕组、 或所述励磁绕组和所述输出绕组, 组成谐振电路, 用以 控制所述功率开关管的所述驱动电压信号具有緩慢的边沿速率。
具体地, 如图 2所示, 本实施例中的功率开关管包括功率开关管 1、 功率 开关管 2 ...、 功率开关管 n , 由于每个功率开关管的栅极和源极之间存在寄生 电容和寄生电阻, 对于与输出绕组的两端相连接的功率开关管, 由于输出绕 组与功率开关管的寄生电容和寄生电阻之间形成一个谐振电路, 而且励磁绕 组中的电流也不会发生突变, 因此输出绕组两端的电压也不会发生突变, 为 与输出绕组的两端相连接的功率开关管提供的驱动电压信号有较緩的边沿速 率。 由于励磁绕组两端分别接一个功率开关管, 励磁绕组与功率开关管的两 端所接的功率开关管的寄生电容和寄生电阻之间也组成了一个谐振电路, 除 此之外, 输出绕组所组成的谐振电路也可以等效到励磁绕组上, 由此分别与 励磁绕组的两端相连接的功率开关管的驱动电压信号也会有较緩的边沿速 率, 大幅度地降低了功耗。
当然, 也可以在变压器 203的励磁绕组的两端加一个电容, 该电容接在 所述谐振电路中, 用以调节所述谐振电路的谐振频率。
本发明实施例中, 功率开关管的驱动装置根据输入的一组驱动信号, 为 变压器的励磁绕组加电; 通过变压器的励磁绕组为功率开关管的控制端输入 驱动电压信号, 或者通过变压器的输出绕组对励磁绕组感应的感应电压为功 率开关管的控制端输入驱动电压信号。 通过应用本发明实施例提供的装置, 可以实现功率开关管的低损耗驱动, 并且提高了可靠性。
图 3为本发明实施例提供的一种功率开关管的驱动装置的典型应用示意 图。 如图 3 所示, 本驱动装置的典型应用包括: 一个输入单元、 一个用来驱 动功率开关管的驱动单元、 一个驱动变压器、 一组功率开关管、 负载。 其中, 输入单元用来向驱动单元输入第一驱动信号 Vgsll、 第二驱动信号 Vgs21、 第 三驱动信号 Vgs31、 第四驱动信号 Vgs41; 驱动单元包括第一场效应管 Ql、 第 二场效应管 Q2、 第三场效应管 Q3、 第四场效应管 Q4、 电容 Cb; 驱动变压器 包括励磁绕组 L1, 多个输出绕组 L2、 L3、 L4、 L9; 一组功率开关管包括多个 功率开关管 Q5、 Q6、 Q7、 Q8、 Q10、 Qll, 多个功率开关管的驱动电压信号由 驱动变压器提供; 负载可以包括电容 C2、 电阻 R1等。
如图 3所示, 第一场效应管 Q1的栅极、 第二场效应管 Q2的栅极、 第三 场效应管 Q3的栅极、 第四场效应管 Q4的栅极接一组驱动信号, 这一组驱动 信号包括第一驱动信号 Vgsll、 第二驱动信号 Vgs21、 第三驱动信号 Vgs31、 第四驱动信号 Vgs41。 其中, 第一驱动信号 Vgsll输入第一场效应管 Q1, 第 二驱动信号 Vgs21输入第二场效应管 Q2, 第三驱动信号 Vgs31输入第三场效 应管 Q3, 第四驱动信号 Vgs41输入第四场效应管 Q4, 这一组驱动信号周期性 地变化, 由此控制场效应管 Ql、 Q2、 Q3、 Q4的状态为导通或截止。
具体地, 第一驱动信号 Vgsll和第二驱动信号 Vgs21为互补信号, 并且 第一驱动信号 Vgsll和第二驱动信号 Vgs21之间存在死区, 即第一驱动信号 Vgsll和第二驱动信号 Vgs21存在同时为低电平的时间,由此可以保证在第一 驱动信号 Vgsll或第二驱动信号 Vgs21从低电平变为高电平时, 第一驱动信 号 Vgsll控制的第一场效应管 Q1或第二驱动信号 Vgs21控制的第二场效应管 Q2实现零电压开关, 大幅度地降低驱动损耗; 第三驱动信号 Vgs31和第四驱 动信号 Vgs41为互补信号, 并且第三驱动信号 Vgs31和第四驱动信号 Vgs41 之间存在死区, 即第三驱动信号 Vgs31和第四驱动信号 Vgs41存在同时为低 电平的时间, 由此可以保证在第三驱动信号 Vgs31或第四驱动信号 Vgs41从 低电平变为高电平时, 第三驱动信号 Vgs31控制的第三场效应管 Q3或第四驱 动信号 Vgs41控制的第四场效应管 Q4实现零电压开关, 大幅度地降低驱动损 耗; 第一驱动信号 Vgsll和第三驱动信号 Vgs31的相位差为 180度, 即时序 相差半个周期, 用以第一场效应管 Q1和第三场效应管 Q3交替导通; 第二驱 动信号 Vgs21和第四驱动信号 Vgs41的相位差为 180度, 即时序相差半个周 期, 用以第二场效应管 Q2和第四场效应管 Q4交替导通。
第一场效应管 Ql、 第二场效应管 Q2、 第三场效应管 Q3、 第四场效应管 Q4组成了一个全桥结构, 其中第一场效应管 Q1的漏极与直流电源 VI的正极 相连接, 第一场效应管 Q1的源极与第二场效应管 Q2的漏极相连接, 第一场 效应管的栅极用于接收第一驱动信号 Vgsll; 第二场效应管 Q2的源极接地, 第二场效应管 Q2的栅极用于接收第二驱动信号 Vgs21;第三场效应管 Q3的漏 极与直流电源 VI的正极相连接, 第三场效应管 Q3的源极与第四场效应管 Q4 的漏极、 变压器的励磁绕组 L1的一端相连接; 第三场效应管的栅极与用于接 收第三驱动信号 Vgs3; 第四场效应管 Q4的源极接地, 第四场效应管 Q4的栅 极用于接收第四驱动信号 Vgs4。 驱动单元 202还可以包括一个电容, 该电容 Cb的一端与第一场效应管 Q1的源极、 第二场效应管 Q2的漏极相连接, 另一 端与变压器 203的励磁绕组 L1的另一端相连接。
驱动变压器的励磁绕组 L1的一端的电压信号为 Vgs5,接功率开关管 Q8的 栅极, 用于为功率开关管 Q8提供驱动电压信号, 另一端的电压信号为 Vgs6, 接功率开关管 Q6的栅极, 用于为功率开关管 Q6提供驱动电压信号。 由此, 功率开关管 Q8、 励磁绕组、 功率开关管 Q6之间形成了一个谐振电路。 输出绕 组 L2的两端的电压信号分别为 Vgsl和 swz,接功率开关管 Q5的栅极和源极, Vgsl-swz用于为功率开关管 Q5提供驱动电压信号, 由此 L2、 功率开关管 Q5 形成一个谐振电路, 该谐振电路也可以等效为励磁绕组 L1 和功率开关管 Q5 之间的谐振电路。输出绕组 L3的两端的电压信号分别为 Vgs4和 0,接功率开 关管 Q10的栅极和源极, Vgs4-0用于为功率开关管 Q10提供驱动电压信号, 由此 L3、 功率开关管 Q9之间形成一个谐振电路, 该谐振电路也可以等效为励 磁绕组 L1和功率开关管 Q10之间的谐振电路。 同样, 由于输出绕组 L4的两 端 Vgs2和 swy分别接功率开关管 Q7的栅极和源极, 并且形成了 L4、 功率开 关管 Q7之间的谐振电路, 等效为励磁绕组 L1和 Q7之间的谐振电路。 由于输 出绕组 L9两端的电压信号分别为 Vgs3和 0,接功率开关管 Q11的栅极和源极, Vgs3-0用于为功率开关管 Q11提供驱动电压信号, 由此 L9、 功率开关管 Q11 之间形成一个谐振电路, 该谐振电路也可以等效为励磁绕组 L1和功率开关管 Q11之间的谐振电路。由于该驱动装置的典型应用在工作过程中存在上述工作 关系, 因此通过变压器的励磁绕组为功率开关管的控制端提供的驱动电压信 号不能发生突变, 而是一个有緩慢的边沿速率的驱动电压信号; 而变压器的 输出绕组通过对励磁绕组感应的感应电压为功率开关管的控制端输入的驱动 电压信号也不能发生突变, 而是一个有緩慢的边沿速率的驱动电压信号。
如图 4和图 5所示, 图 4为本发明实施提提供的一种功率开关管的驱动 装置中各个场效应管的驱动信号的时序图; 图 5 为本发明实施例提供的一种 功率开关管的驱动装置中基于图 3 所示的驱动信号而为各个功率开关管提供 的驱动电压信号的时序图。 通过图 4 可以看出, 第一驱动信号和第二驱动信 号为互补信号, 并且第一驱动信号和第二驱动信号之间存在死区, 即第一驱 动信号和第二驱动信号存在同时为低电平的时间; 第三驱动信号和第四驱动 信号为互补信号, 并且第三驱动信号和第四驱动信号之间存在死区, 即第三 驱动信号和第四驱动信号存在同时为低电平的时间; 第一驱动信号和第三驱 动信号的相位差为 180度, 即时序相差半个周期; 第二驱动信号和第四驱动 信号的相位差为 180度, 即时序相差半个周期。 通过图 5可以看出, 各个功 率开关管的驱动电压信号都有较緩的边沿速率, 而且在第一驱动信号和第二 驱动信号的死区时间内, 励磁绕组 L1与功率开关管之间形成谐振, 驱动电压 信号 Vg s 6达到最高值, 即达到直流电源的电压值 VI 时, 此时驱动单元 202 中的各个场效应管没有分压, 驱动信号 Vgs l l 从低电平变为高电平或驱动信 号 Vgs 21 从低电平变为高电平时, 形成了零电压开关。 在第三驱动信号和第 四驱动信号的死区时间内, 励磁绕组 L1与功率开关管之间形成谐振, 驱动电 压信号 Vgs 5达到最高值, 即达到直流电压的电压值 VI 时, 此时各个场效应 管没有分压, 驱动信号 Vg s 31从低电平变为高电平或驱动信号 Vgs 41从低电 平变为高电平时, 形成了零电压开关。 由此可以看出, 各个功率开关管的驱 动电压信号是一个没有发生突变的、 有较緩的边沿速率的驱动电压信号, 大 幅度地降低了功耗。
如图 3所示, 在通过功率开关管来驱动负载时, 存在输入电压 Vin与负 载的电压不一致的情况, 此时可以使用一个变压器来进行电压变换, 而且此 变压器的输入功率和输出功率理论上相等, 即该变压器理论上可以在不损耗 功率的情况下实现电压变换, 为负载提供需要的电压。 根据输入的一组驱动信号, 为变压器的励磁绕组加电; 通过变压器的励磁绕 组为功率开关管的控制端输入驱动电压信号, 或者通过变压器的输出绕组对 励磁绕组感应的感应电压为功率开关管的控制端输入驱动电压信号。 通过应 用本发明实施例提供的装置, 可以实现功率开关管的低损耗驱动, 并且提高 了可靠性。
图 6为本发明实施例提供的另一种功率开关管的驱动装置示意图。如图 6 所示, 本实施例包括: 输入单元 601、 驱动单元 602、 变压器 603、 整流单元
604、 功率开关管 605。
输入单元 601与驱动单元 602相连接, 可以为驱动单 602输入一组驱动 信号。 这一组驱动信号可以包括 4 个驱动信号, 也可以包括两个驱动信号, 如果驱动单元 602 包括一个由 4个场效应管组成的全桥结构, 则这一组驱动 信号可包括 4个驱动信号, 分别用于驱动这 4个场效应管; 如果驱动单元 602 包括一个由 1个场效应管组成的半桥结构, 则这一组驱动信号可包括 1个驱 动信号, 分别用于驱动这 2个场效应管。
本实施例以这一组驱动信号包括 4个驱动信号, 分别用来驱动驱动单元 602中的各个场效应管为例描述本驱动装置,关于这一组驱动信号包括两个驱 动信号的情况不再详述。
具体地, 这一组驱动信号可包括: 第一驱动信号、 第二驱动信号、 第三 驱动信号、 第四驱动信号。 其中, 第一驱动信号和第二驱动信号为互补信号, 并且第一驱动信号和第二驱动信号之间存在死区, 即第一驱动信号和第二驱 动信号存在同时为低电平的时间, 由此可以保证在第一驱动信号或第二驱动 信号从低电平变为高电平时, 第一驱动信号控制的第一场效应管或第二驱动 信号控制的第二场效应管实现零电压开关, 大幅度地降低驱动损耗; 第三驱 动信号和第四驱动信号为互补信号, 并且第三驱动信号和第四驱动信号之间 存在死区, 即第三驱动信号和第四驱动信号存在同时为低电平的时间, 由此 可以保证在第三驱动信号或第四驱动信号从低电平变为高电平时, 第三驱动 信号控制的第三场效应管或第四驱动信号控制的第四场效应管实现零电压开 关, 大幅度地降低驱动损耗; 第一驱动信号和第三驱动信号的相位差为 180 度, 即时序相差半个周期, 用以第一场效应管和第三场效应管交替导通; 第 二驱动信号和第四驱动信号的相位差为 180度, 即时序相差半个周期, 用以 第二场效应管和第四场效应管交替导通。
其中, 第一驱动信号输入驱动单元 602 中的第一场效应管的栅极, 第二 驱动信号输入驱动单元 602 中的第二场效应管的栅极, 第三驱动信号输入驱 动单元 602 中的第三场效应管的栅极, 第四驱动信号输入驱动单元 602的第 四场效应管的栅极; 即输入单元 601 输入的第一驱动信号、 第二驱动信号、 第三驱动信号、 第四驱动信号分别用来控制第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管的导通或截止状态。
驱动单元 602用于根据输入单元 601输入的一组驱动信号, 为变压器的 励磁绕组加电。 其中, 驱动单元 602 包括: 第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管。
可选地, 驱动单元 602还包括: 直流电源、 电容。
具体地, 第一场效应管的漏极与直流电源的正极相连接, 第一场效应管 的源极与第二场效应管的漏极、 电容的一端相连接, 第一场效应管的栅极与 输入单元 601相连接, 用于接收输入单元 601输出的第一驱动信号; 第二场 效应管的源极接地, 第二场效应管的栅极与输入单元 601 相连接, 用于接收 输入单元 601 输出的第二驱动信号; 第三场效应管的漏极与直流电源的正极 相连接, 第三场效应管的源极与第四场效应管的漏极、 变压器的励磁绕组的 一端相连接; 第三场效应管的栅极与输入单元 601 相连接, 用于接收输入单 元 601 输出的第三驱动信号; 第四场效应管的源极接地, 第四场效应管的栅 极与输入单元 601相连接, 用于接收输入单元 601输出的第四驱动信号; 电 容的另一端与变压器的励磁绕组的另一端相连接。 由此, 驱动单元 602在第 一驱动信号、 第二驱动信号、 第三驱动信号、 第四驱动信号按照预设频率发 生变化时, 根据上述的变压器的励磁绕组与驱动单元的连接关系, 为变压器 的励磁绕组加电。
第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管在连接关 系上组成了一个全桥结构, 其中变压器的励磁绕组的一端连接在该全桥结构 的一个桥臂的中点, 另一个桥臂直接连接在全桥结构的另一个桥臂的中点或 者通过一个电容连接在全桥结构的另一个桥臂的中点。 随着一组驱动信号的 变化, 第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管的导通 或截止状态也在随之变化, 由此流过变压器的励磁绕组的电流在发生变化, 实现了为变压器的励磁绕组加电。
变压器 603 ,与整流单元 604和驱动单元 602相连接,具有指定的磁化电 感, 用以存储能量, 根据所述存储的能量通过所述变压器的所述励磁绕组为 功率开关管的控制端输入驱动电压信号, 或者将所述变压器的输出绕组对所 述励磁绕组感应的感应电压经过所述整流单元为功率开关管的控制端输入驱 动电压信号, 用以所述多个场效应管实现零电压开关。 变压器 603 的励磁绕 组的一端接驱动单元 602 中全桥结构的一个桥臂的中点, 另一端接驱动单元 602中全桥结构的另一个桥臂的中点。
具体地, 该变压器 603拥有多个绕组, 其中至少一个励磁绕组、 一个输 出绕组, 励磁绕组的每一端都可以与功率开关管的控制端即栅极相连接, 每 个输出绕组的两端经过整流单元 604 的一个整流器与功率开关管的栅极和源 极相连接, 该整流器可以为一个整流开关, 用于对变压器 603 的输出绕组输 出的电压信号进行整流处理, 并将整流后的电压信号作为与输出绕组相连接 的功率开关管的驱动电压信号.由此随着输入单元 601输入的一组驱动信号的 变化, 第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管的导通 或截止状态的变化, 变压器 603 的励磁绕组两端的电压也在发生变化, 流过 励磁绕组的电流也在发生变化, 输出绕组所产生的感应电流、 感应电压都随 之发生变化。 因此由励磁绕组相连接的功率开关管的驱动电压信号在不断发 生变化, 由输出绕组经过整流单元 604 连接的功率开关管的驱动电压信号也 在不断发生变化。
整流单元 604 , 包括至少一个整流器,每个整流器包括一个整流开关及所 述整流开关的控制电路, 用于对所述变压器的输出绕组对所述励磁绕组感应 的感应电压进行整流处理, 得到驱动电压信号。
整流单元 604 包括一个或多个整流器, 变压器的每个输出绕组都经过一 个整流器与功率开关管相连接。 其中, 整流器包括一个整流开关和该整流开 关的控制电路, 该控制电路可以控制整流开关的导通或截止, 进而实现对输 出绕组输出的感应电压信号进行整流处理, 得到单极性驱动电压信号。 使用 单极性驱动电压信号驱动功率开关管比使用双极性驱动电压信号驱动功率开 关管的损耗更低。 后面将详细介绍将双极性驱动电压信号整流为单极性驱动 电压信号的方法, 此处不再叙述。 功率开关管 605 , 与所述变压器相连接, 包括寄生电容, 所述寄生电容与 所述变压器组成谐振电路, 用以控制所述功率开关管的所述驱动电压信号具 有緩慢的边沿速率。
需要说明的是, 由于功率开关管的栅极和源极之间存在寄生电容和寄生 电阻, 对于与输出绕组的两端相连接的功率开关管, 由于输出绕组与功率开 关管的寄生电容和寄生电阻之间形成一个谐振电路, 而且励磁绕组中的电流 也不会发生突变, 因此输出绕组两端的电压也不会发生突变, 为与输出绕组 的两端相连接的功率开关管提供的驱动电压信号有较緩的边沿速率。 由于励 磁绕组两端分别接一个功率开关管, 励磁绕组与功率开关管的两端所接的功 率开关管的寄生电容和寄生电阻之间也组成了一个谐振电路, 除此之外, 输 出绕组所组成的谐振电路也可以等效到励磁绕组上, 由此分别与励磁绕组的 两端相连接的功率开关管的驱动电压信号也会有较緩的边沿速率, 大幅度地 降低了功耗。
当然, 还可以在变压器励磁绕组的两侧接入一个电容, 该电容接在所述 谐振电路中, 用以调节所述谐振电路的谐振频率。
图 7 为本发明实施例提供的另一功率开关管的驱动装置的典型应用示意 图。 如图 7所示, 本驱动装置的典型应用除了包括图 3中的输入单元、 用来 驱动功率开关管的驱动单元、 一个驱动变压器、 一组功率开关管、 负载之外, 还包括一个整流单元, 该整流单元包括一组整流器, 每组整流开关包括一个 整流开关, 即该整流单元中包括一组整流开关 Q9、 Q12、 Q 1 3、 Q14 , 用于对驱 动变压器的输出绕组输出的电压信号进行整流处理, 并将整流后的电压信号 作为与输出绕组相连接的功率开关管的驱动电压信号。
由于本实施例提供的功率开关管的驱动装置的典型应用与上面的实施例 介绍的典型应用的主要区别在于, 驱动变压器的每一个输出绕组的输出都接 了一个整流开关对输出信号进行整流处理, 因此本实施例将只对此整流开关 的功能进行描述, 该驱动装置的典型应用的其他单元的工作过程和实现的功 能可以参考上面的实施例, 此处不再赘述。
其中, 驱动变压器的输出绕组 L2的两端的电压信号分别为 Vg s l和 swz , 并且输出绕组 L2的输出接了一个开关 Q12对其输出进行整流处理, 并将整流 处理后得到的驱动电压信号接在功率开关管 Q5的栅极和源极, 用于为功率开 关管 Q5提供驱动电压信号, 当 L2上端的电压为正时, Q12的题二极管导通, 使 L2 两端的电压加到功率开关管 Q5的栅极, 通过控制输入 Q12栅极的电压 可以使 Q1 1导通, 当 L2 的正电压降低时, 由于 Q12是导通的, 功率开关管 Q5 的驱动电压信号也随之降低, 在 L1 的电压降到零左右时, 可以通过控制 Q12截止, 来实现在 L1 的电压为负电压时, 不向功率开关管 Q5 提供驱动电 压信号。 由此可以实现为功率开关管提供单极性的驱动电压, 这样比用双极 性驱动电压的损耗更低。
同样,可以在输出绕组 L 3的输出接一个开关 Q 1 3对其输出进行整流处理 , 并将整流处理后的驱动电压信号接在功率开关管 Q1 0 的栅极和源极, 用于为 功率开关管 Q1 0提供单极性的驱动电压信号, 降低损耗。 对于输出绕组 L4的 输出可以接一个开关 Q9对其输出进行整流处理, 对于输出绕组 L9的输出可 以接一个开关 Q14对其输出进行整流处理, 由此实现为功率开关管 Q7和 Q1 1 提供单极性的驱动电压信号。
图 8为本发明实施例提供的一种功率开关管的驱动装置中基于图 4所示 的驱动信号而为各个功率开关管提供的驱动电压信号的时序图。 通过图 8 可 以看出, 对各个功率开关管的驱动电压信号都有较緩的边沿速率, 而且通过 对输出绕组的输出进行整流处理, 使得各个功率开关管的驱动电压信号是一 个单极性的驱动电压信号, 大幅度地降低了功耗。 典型应用中, 根据输入的一组驱动信号, 为变压器的励磁绕组加电, 通过变 压器的励磁绕组为功率开关管的控制端输入驱动电压信号, 或者通过变压器 的输出绕组对励磁绕组感应的感应电压为功率开关管的控制端输入驱动电压 信号。 通过应用本发明实施例提供的装置, 可以实现功率开关管的低损耗驱 动, 并且提高了可靠性。
上面的实施例介绍了通过对驱动变压器的输出绕组的输出进行整流处理 而实现为功率开关管提供单极性驱动电压信号的方法, 而对输出绕组的输出 进行整流处理的整流方式可以使用自驱方式或它驱方式, 下面分别通过一个 具体的实施例进行介绍。
图 9为本发明实施例提供的一种功率开关管的驱动装置中对输出绕组的 输出进行整理处理的自驱整流装置示意图。 如图 9 所示, 该自驱整流装置包 括一个整流开关和该整流开关的控制电路, 其中该整流开关为开关 K1 , 整流 开关的控制电路包括二极管 D8、 一个电阻 R9、 一个电容 C5。
如图 9所示, 该自驱整流装置中, 二极管 D8的正极与输出绕组 L2的上 端、 R9的一端、 功率开关管 Qp的栅极相连接, 二极管的负极与 R9的另一端、 电容 C5的一端、 开关 K1的栅极相连接; 电容 C5的另一端与开关 K1的源极、 功率开关管 Qp的源极相连接; 开关 K1的漏极与输出绕组 L2的下端相连接。
具体地, 当输出绕组 L2的上端为正电压时, 开关 K1的题二极管导通, 输出绕组 L2两端的电压加到功率开关管 Qp的栅极作为驱动电压, 也通过二 极管 D8和电阻 R9加到开关 K1的栅极使得 K 1导通。 当输出绕组的正电压降 低时, 由于开关 K1是导通的, 功率开关管 Qp的驱动电压也随之降低。 由于 二极管 D8反向截止, 电容 C5的电荷通过电阻 R9释放。 通过调节电阻 R9和 电容 C5 , 可以实现在输出绕组的正电压降到 0左右时, 开关 K1截止, 进而实 现阻断输出绕组 L2的电压为负值时向功率开关管 Qp提供驱动电压。 也即, 通过上述自驱整流装置可以实现输出绕组 L2只向功率开关管 Qp提供单极性 的驱动电压, 大幅度地降低了功率损耗。
由此, 结合本实施例提供的自驱整流装置和本发明提供的功率开关管的 驱动装置, 可以实现为功率开关管提供单极性、 具有较緩的边沿速率的驱动 电压信号, 大幅度地降低了功率损耗, 而且提高了可靠性。 图 10为本发明实施例提供的一种功率开关管的驱动装置中对输出绕组的 输出进行整流处理的它驱整流装置示意图。 如图 10所示, 该自驱它驱整流装 置包括一个整流开关及该整流开关的控制电路, 其中整流开关为开关 K 1 , 该整流开关的控制电路为控制芯片。
如图 1 0所示, 该它驱整流装置中, 控制芯片与输出绕组 L2的两端、 开 关 K1的栅极相连接; 输出绕组 L2的上端与功率开关管 Qp的栅极相连接; 开 关 K1的漏极与输出绕组 L2的下端相连接, 开关 K1的源极与功率开关管 Qp 的源极相连接。
具体地, 控制芯片检测输出绕组 L2两端的电压, 当上端电压为正、 下端 电压为负时, 控制 K1使其导通; 当控制芯片检测到输出绕组 L2上端电压为 负、 下端电压为正时, 控制 K1使其截止, 由此可以实现输出绕组 L2只向功 率开关管 Qp提供单极性的驱动电压, 大幅度地降低了功率损耗。
由此, 结合本实施例提供的它驱自驱整流装置和本发明提供的功率开关 管的驱动装置, 可以实现为功率开关管提供单极性、 具有较緩的边沿速率的 驱动电压信号, 大幅度地降低了功率损耗, 而且提高了可靠性。
需要说明的是, 上面只是描述了本发明实施例提供的功率开关管的驱动 装置的一些具体实施例, 不用于限制本发明实施例提供的驱动装置的保护范 围。 本发明实施例还提供了一种功率开关管的驱动方法, 图 1 1为本发明实施 例提供的一种功率开关管的驱动方法的流程图。 如图 11所示, 本实施例具体 包括以下步骤:
步骤 1101 , 根据输入的一组驱动信号, 为变压器的励磁绕组加电; 所述 一组驱动信号包括第一驱动信号、 第二驱动信号、 第三驱动信号、 第四驱动 信号, 所述第一驱动信号和所述第二驱动信号为互补信号, 并且所述第一驱 动信号和所述第二驱动信号之间存在死区, 用以所述第一驱动信号驱动的第 一场效应管和所述第二驱动信号驱动的第二场效应管实现零电压开关; 所述 第三驱动信号和所述第四驱动信号为互补信号, 并且所述第三驱动信号和所 述第四驱动信号之间存在死区, 用以所述第三驱动信号驱动的第三场效应管 和所述第四驱动信号驱动的第四场效应管实现零电压开关; 所述第一驱动信 号和所述第三驱动信号的相位差为 180度, 用以所述第一场效应管和所述第 三场效应管交替导通;所述第二驱动信号和所述第四驱动信号的相位差为 180 度, 用以所述第二场效应管的状态和所述第四场效应管交替导通; 所述第一 场效应管、 所述第二场效应、 所述第三场效应管、 所述第四场效应管组成一 个全桥结构; 所述全桥结构和所述变压器相连接。
具体地, 这一组驱动信号可包括: 第一驱动信号、 第二驱动信号、 第三 驱动信号、 第四驱动信号。 其中, 第一驱动信号和第二驱动信号为互补信号, 并且第一驱动信号和第二驱动信号之间存在死区, 即第一驱动信号和第二驱 动信号存在同时为低电平的时间, 由此可以保证在第一驱动信号或第二驱动 信号从低电平变为高电平时, 第一驱动信号控制的第一场效应管或第二驱动 信号控制的第二场效应管实现零电压开关, 大幅度地降低驱动损耗; 第三驱 动信号和第四驱动信号为互补信号, 并且第三驱动信号和第四驱动信号之间 存在死区, 即第三驱动信号和第四驱动信号存在同时为低电平的时间, 由此 可以保证在第三驱动信号或第四驱动信号从低电平变为高电平时, 第三驱动 信号控制的第三场效应管或第四驱动信号控制的第四场效应管实现零电压开 关, 大幅度地降低驱动损耗; 第一驱动信号和第三驱动信号的相位差为 180 度, 即时序相差半个周期, 用以第一场效应管和第三场效应管交替导通; 第 二驱动信号和第四驱动信号的相位差为 180度, 即时序相差半个周期, 用以 第二场效应管和第四场效应管交替导通。
其中, 第一驱动信号输入第一场效应管的栅极, 第二驱动信号输入第二 场效应管的栅极, 第三驱动信号输入第三场效应管的栅极, 第四驱动信号输 入第四场效应管的栅极; 即第一驱动信号、 第二驱动信号、 第三驱动信号、 第四驱动信号分别用来控制第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管的导通或截止状态。 第一场效应管、 第二场效应管、 第三场效 应管、 第四场效应管在连接关系上组成了一个全桥结构, 其中变压器的励磁 绕组的一端连接在该全桥结构的一个桥臂的中点, 另一个桥臂直接连接在全 桥结构的另一个桥臂的中点或者通过一个电容连接在全桥结构的另一个桥臂 的中点。 随着一组驱动信号的变化, 第一场效应管、 第二场效应管、 第三场 效应管、 第四场效应管的导通或截止状态也在随之变化, 由此流过变压器的 励磁绕组的电流在发生变化, 实现了为变压器的励磁绕组加电。
步骤 1102 , 通过变压器的励磁绕组为功率开关管的控制端输入驱动电压 信号, 或者通过变压器的输出绕组对励磁绕组感应的感应电压为功率开关管 的控制端输入驱动电压信号。
具体地, 该变压器拥有多个绕组, 其中至少一个励磁绕组、 一个输出绕 组, 励磁绕组的每一端都可以与功率开关管的控制端即栅极相连接, 每个输 出绕组的两端可以分别直接与功率开关管的栅极和源极相连接, 由此随着一 组驱动信号的变化, 第一场效应管、 第二场效应管、 第三场效应管、 第四场 效应管的导通或截止状态的变化, 变压器的励磁绕组两端的电压也在发生变 化, 流过励磁绕组的电流也在发生变化, 输出绕组所产生的感应电流、 感应 电压都随之发生变化。 因此与励磁绕组和 /或输出绕组相连接的功率开关管的 驱动电压信号也在不断发生变化。
需要说明的是, 由于功率开关管的栅极和源极之间存在寄生电容和寄生 电阻, 对于与输出绕组的两端相连接的功率开关管, 由于输出绕组与功率开 关管的寄生电容和寄生电阻之间形成一个谐振电路, 而且励磁绕组中的电流 也不会发生突变, 因此输出绕组两端的电压也不会发生突变, 为与输出绕组 的两端相连接的功率开关管提供的驱动电压信号有较緩的边沿速率。 由于励 磁绕组两端分别接一个功率开关管, 励磁绕组与功率开关管的两端所接的功 率开关管的寄生电容和寄生电阻之间也组成了一个谐振电路, 除此之外, 输 出绕组所组成的谐振电路也可以等效到励磁绕组上, 由此分别与励磁绕组的 两端相连接的功率开关管的驱动电压信号也会有较緩的边沿速率, 大幅度地 降低了功耗。
输出绕组在为功率开关管提供驱动电压信号之前, 可以首先对输出的电 压信号进行整流处理, 得到单极性驱动电压信号。 使用单极性驱动电压信号 驱动功率开关管比使用双极性驱动电压信号驱动功率开关管的损耗更低。
本发明实施例提供的功率开关管的驱动方法,根据输入的一组驱动信号, 为变压器的励磁绕组加电; 通过变压器的励磁绕组为功率开关管的控制端输 入驱动电压信号, 或者通过变压器的输出绕组对励磁绕组感应的感应电压为 功率开关管的控制端输入驱动电压信号。 通过应用本发明实施例提供的方法 和装置, 可以实现功率开关管的低损耗驱动, 并且提高了可靠性。
上述各个实施例中的第一场效应管 (Q1 ) 、 第二场效应管 (Q2 ) 、 第三 场效应管 (Q 3 ) 、 第四场效应管 (Q4 )都为 N型场效应管, 当驱动信号为低 时, 第一场效应管 (Q1 ) 、 第二场效应管 (Q2 ) 、 第三场效应管 (Q 3 ) 、 第 四场效应管 (Q4 )截止; 当驱动信号为高时, 第一场效应管 (Q1 ) 、 第二场 效应管 (Q2 ) 、 第三场效应管 (Q 3 ) 、 第四场效应管 (Q4 )导通。 需要说明 的是, 上述场效应管的类型不是必须为 N型晶体管, 也可以为 P型晶体管。 需要说明的是, 本技术领域的人员在不付出创造性劳动的前提下, 根据上述 实施例中所提供的驱动装置示意图所得出的驱动装置示意图都在本发明的保 护范围内。
专业人员应该还可以进一步意识到, 结合本文中所公开的实施例描述的 各示例的单元及算法步骤, 能够以电子硬件、 计算机软件或者二者的结合来 实现, 为了清楚地说明硬件和软件的可互换性, 在上述说明中已经按照功能 一般性地描述了各示例的组成及步骤。 这些功能究竟以硬件还是软件方式来 执行, 取决于技术方案的特定应用和设计约束条件。 专业技术人员可以对每 个特定的应用来使用不同方法来实现所描述的功能, 但是这种实现不应认为 超出本发明的范围。
结合本文中所公开的实施例描述的方法或算法的步骤可以用硬件、 处理 器执行的软件模块, 或者二者的结合来实施。 软件模块可以置于随机存储器
( RAM ) 、 内存、 只读存储器(ROM ) 、 电可编程 R0M、 电可擦除可编程 R0M、 寄存器、 硬盘、 可移动磁盘、 CD-R0M、 或技术领域内所公知的任意其它形式 的存储介质中。
以上所述的具体实施方式, 对本发明的目的、 技术方案和有益效果进行 了进一步详细说明, 所应理解的是, 以上所述仅为本发明的具体实施方式而 已, 并不用于限定本发明的保护范围, 凡在本发明的精神和原则之内, 所做 的任何修改、 等同替换、 改进等, 均应包含在本发明的保护范围之内。

Claims

权 利 要 求 书 CP12214
1、 一种功率开关管的驱动装置,其特征在于,所述装置包括:输入单元、 驱动单元、 变压器、 功率开关管;
所述输入单元, 与所述驱动单元相连接, 用于为所述驱动单元输入一组 驱动信号, 所述一组驱动信号包括第一驱动信号、 第二驱动信号、 第三驱动 信号、 第四驱动信号, 所述第一驱动信号和所述第二驱动信号为互补信号, 并且所述第一驱动信号和所述第二驱动信号之间存在死区, 用以所述第一驱 动信号驱动的第一场效应管和所述第二驱动信号驱动的第二场效应管实现零 电压开关; 所述第三驱动信号和所述第四驱动信号为互补信号, 并且所述第 三驱动信号和所述第四驱动信号之间存在死区, 用以所述第三驱动信号驱动 的第三场效应管和所述第四驱动信号驱动的第四场效应管实现零电压开关; 所述第一驱动信号和所述第三驱动信号的相位差为 180度, 用以所述第一场 效应管和所述第三场效应管交替导通; 所述第二驱动信号和所述第四驱动信 号的相位差为 180度, 用以所述第二场效应管的状态和所述第四场效应管交 替导通;
所述驱动单元, 包括所述第一场效应管、 所述第二场效应管、 所述第三 场效应管、 所述第四场效应管, 用于根据所述输入单元输入的所述一组驱动 信号, 为所述变压器的励磁绕组加电;
所述变压器, 具有指定的磁化电感, 用以存储能量, 根据所述存储的能 量, 通过所述变压器的所述励磁绕组为所述功率开关管的控制端输入驱动电 压信号, 或者通过所述变压器的输出绕组对所述励磁绕组感应的感应电压为 功率开关管的控制端输入驱动电压信号;
所述功率开关管, 通过所述控制端与所述变压器相连接, 包括寄生电容, 所述寄生电容与所述变压器组成谐振电路, 用以控制所述功率开关管的所述 驱动电压信号具有緩慢的边沿速率。
2、 根据权利要求 1所述的功率开关管的驱动装置,其特征在于,所述第 一场效应管的漏极与所述直流电源的正极相连接, 所述第一场效应管的源极 与所述第二场效应管的漏极相连接, 所述第一场效应管的栅极与所述输入单 元相连接, 用于接收所述输入单元输出的所述第一驱动信号;
所述第二场效应管的源极接地, 所述第二场效应管的栅极与所述输入单 元相连接, 用于接收所述输入单元输出的所述第二驱动信号;
所述第三场效应管的漏极与所述直流电源的正极相连接, 所述第三场效 应管的源极与所述第四场效应管的漏极、 所述变压器的励磁绕组的一端相连 接; 所述第三场效应管的栅极与所述输入单元相连接, 用于接收所述输入单 元输出的所述第三驱动信号;
所述第四场效应管的源极接地, 所述第四场效应管的栅极与所述输入单 元相连接, 用于接收所述输入单元输出的所述第四驱动信号。
3、 根据权利要求 2所述的功率开关管的驱动装置,其特征在于,所述驱 动单元还包括: 第一电容; 所述第一电容的一端与所述第一场效应管的源极、 所述第二场效应管的漏极相连接, 所述第一电容的另一端与所述变压器的励 磁绕组的另一端相连接。
4、 根据权利要求 2所述的功率开关管的驱动装置,其特征在于,所述驱 动单元具体用于, 所述第一驱动信号、 所述第二驱动信号、 所述第三驱动信 号、 所述第四驱动信号按照预设频率发生变化时, 根据所述变压器的励磁绕 组与所述驱动单元的连接关系, 为所述变压器的励磁绕组加电。
5、 根据权利要求 1所述的功率开关管的驱动装置,其特征在于,所述变 压器具体用于: 所述功率开关管的控制端与所述变压器的励磁绕组的一端相 连接时, 所述变压器的励磁绕组的一端的端电压为所述功率开关管的控制端 提供驱动电压信号;
所述功率开关管的控制端与所述变压器的输出绕组相连接时, 所述变压 器的输出绕组对所述励磁绕组感应的感应电压为所述功率开关管的控制端提 供驱动电压信号。
6、 根据权利要求 1所述的功率开关管的驱动装置,其特征在于,所述装 置还包括: 第二电容, 所述第二电容接在所述谐振电路中, 用以调节所述谐 振电路的谐振频率。
7、 一种功率开关管的驱动装置,其特征在于,所述装置包括:输入单元、 驱动单元、 变压器、 整流单元、 功率开关管;
所述输入单元, 与所述驱动单元相连接, 用于为所述驱动单元输入一组 驱动信号;
所述驱动单元, 包括多个场效应管, 用于根据所述输入单元输入的所述 一组驱动信号, 控制所述多个场效应管的状态, 为所述变压器的励磁绕组加 电;
所述变压器, 与所述驱动单元和所述整流单元相连接, 具有指定的磁化 电感, 用以存储能量, 根据所述存储的能量通过所述变压器的所述励磁绕组 为功率开关管的控制端输入驱动电压信号, 或者将所述变压器的输出绕组对 所述励磁绕组感应的感应电压经过所述整流单元为功率开关管的控制端输入 驱动电压信号, 用以所述多个场效应管实现零电压开关;
所述整流单元, 包括至少一个整流器, 所述整流器包括整流开关及所述 整流开关的控制电路, 用于对所述变压器的输出绕组对所述励磁绕组感应的 感应电压进行整流处理, 得到驱动电压信号;
所述功率开关管, 与所述变压器相连接, 包括寄生电容, 所述寄生电容 与所述变压器组成谐振电路, 用以控制所述功率开关管的所述驱动电压信号 具有緩慢的边沿速率。
8、 根据权利要求 7所述的功率开关管的驱动装置,其特征在于,所述驱 动单元包括第一场效应管、 第二场效应管、 第三场效应管、 第四场效应管、 直流电源; 所述一组驱动信号包括第一驱动信号、 第二驱动信号、 第三驱动 信号、 第四驱动信号;
所述第一场效应管的漏极与所述直流电源的正极相连接, 所述第一场效 应管的源极与所述第二场效应管的漏极相连接, 所述第一场效应管的栅极与 所述输入单元相连接, 用于接收所述输入单元输出的所述第一驱动信号; 所述第二场效应管的源极接地, 所述第二场效应管的栅极与所述输入单 元相连接, 用于接收所述输入单元输出的所述第二驱动信号;
所述第三场效应管的漏极与所述直流电源的正极相连接, 所述第三场效 应管的源极与所述第四场效应管的漏极、 所述变压器的励磁绕组的一端相连 接; 所述第三场效应管的栅极与所述输入单元相连接, 用于接收所述输入单 元输出的所述第三驱动信号;
所述第四场效应管的源极接地, 所述第四场效应管的栅极与所述输入单 元相连接, 用于接收所述输入单元输出的所述第四驱动信号。
9、 根据权利要求 8所述的功率开关管的驱动装置,其特征在于,所述第 一驱动信号和所述第二驱动信号为互补信号, 并且所述第一驱动信号和所述 第二驱动信号之间存在死区, 用以所述第一场效应管和所述第二场效应管实 现零电压开关;
所述第三驱动信号和所述第四驱动信号为互补信号, 并且所述第三驱动 信号和所述第四驱动信号之间存在死区, 用以所述第三场效应管和所述第四 场效应管实现零电压开关;
所述第一驱动信号和所述第三驱动信号的相位差为 180度, 用以所述第 一场效应管和所述第三场效应管交替导通;
所述第二驱动信号和所述第四驱动信号的相位差为 180度, 用以所述第 二场效应管和所述第四场效应管交替导通。
10、 根据权利要求 8所述的功率开关管的驱动装置, 其特征在于, 所述 驱动单元还包括: 第一电容; 所述第一电容的一端与所述第一场效应管的源 极、 所述第二场效应管的漏极相连接, 所述第一电容的另一端与所述变压器 的励磁绕组的另一端相连接。
11、 根据权利要求 8所述的功率开关管的驱动装置, 其特征在于, 所述 驱动单元具体用于, 所述第一驱动信号、 所述第二驱动信号、 所述第三驱动 信号、 所述第四驱动信号按照预设频率发生变化时, 根据所述变压器的励磁 绕组与所述驱动单元的连接关系, 为所述变压器的励磁绕组加电。
12、 根据权利要求 7所述的功率开关管的驱动装置, 其特征在于, 所述 变压器具体用于: 所述功率开关管的控制端与所述变压器的励磁绕组的一端 相连接时, 所述变压器的励磁绕组的一端的端电压为所述功率开关管的控制 端提供驱动电压信号;
所述功率开关管的控制端经过所述整流单元与所述变压器的输出绕组相 连接时, 所述变压器的输出绕组对所述励磁绕组感应的感应电压经所述整流 单元处理后为所述功率开关管的控制端提供驱动电压信号。
1 3、 根据权利要求 7所述的功率开关管的驱动装置, 其特征在于, 所述 整流开关具体为第五场效应管, 所述第五场效应管的漏极与所述输出绕组的 一端相连接, 所述第五场效应管的源极与所述功率开关管的源极相连接。
14、 根据权利要求 1 3所述的功率开关管的驱动装置, 其特征在于, 所 述整流开关的控制电路具体包括: 一个二极管、 一个电阻、 第二电容;
所述第五场效应管的栅极与所述二极管的负极、 所述电阻的一端、 所述 第二电容的一端相连接; 所述二极管的正极、 所述电阻的另一端与所述输出 绕组的另一端相连接; 所述第二电容的另一端与所述第五场效应管的源极相 连接;
当所述第五场效应管导通时, 随着所述输出绕组两端的电压信号的降低, 所述第五场效应管的驱动电压信号也降低; 当所述输出绕组两端的电压降低 到一个门限值时, 所述第五场效应管从导通变为截止, 所述功率开关管的驱 动电压信号变为零。
15、 根据权利要求 1 3所述的功率开关管的驱动装置, 其特征在于, 所 述整流开关的控制电路具体包括一个控制芯片;
所述控制芯片与所述第五场效应管的栅极、 所述输出绕组两端相连接; 所述控制芯片用于检测所述输出绕组两端的电压值, 并根据所述电压值 的正负来控制所述第五场场效应管的导通或截止状态, 进而控制所述功率开 关管的驱动电压信号。
16、 根据权利要求 7所述的功率开光管的驱动装置, 其特征在于, 所述 装置还包括: 第二电容, 所述第二电容接在所述谐振电路中, 用以调节所述 谐振电路的谐振频率。
17、 一种功率开关管的驱动方法, 其特征在于, 所述方法包括: 根据输入的一组驱动信号, 为变压器的励磁绕组加电, 用以所述变压器 存储能量;
通过所述变压器的所述励磁绕组为功率开关管的控制端输入驱动电压信 号, 或者通过所述变压器的输出绕组对所述励磁绕组感应的感应电压为功率 开关管的控制端输入驱动电压信号, 用以所述变压器周期性地存储和释放能 量, 并且根据所述变压器能量的变化以及所述一组驱动信号的变化使得所述 驱动信号驱动的场效应管实现零电压开关。
18、 根据权利要求 17所述的功率开关管的驱动方法, 其特征在于, 所 述一组驱动信号具体包括: 第一驱动信号、 第二驱动信号、 第三驱动信号、 第四驱动信号;
所述第一驱动信号输入第一场效应管的栅极, 用以控制所述第一场效应 管的状态; 所述第二驱动信号输入第二场效应管的栅极, 用以控制所述第二 场效应管的状态; 所述第三驱动信号输入第三场效应管的栅极, 用以控制所 述第三场效应管的状态; 所述第四驱动信号输入第四场效应管的栅极, 用以 控制所述第四场效应管的状态;
所述第一场效应管、 所述第二场效应、 所述第三场效应管、 所述第四场 效应管组成一个全桥结构。
19、 根据权利要求 18所述的功率开关管的驱动方法, 其特征在于, 所 述第一驱动信号和所述第二驱动信号为互补信号, 并且所述第一驱动信号和 所述第二驱动信号之间存在死区, 用以所述第一场效应管和所述第二场效应 管实现零电压开关;
所述第三驱动信号和所述第四驱动信号为互补信号, 并且所述第三驱动 信号和所述第四驱动信号之间存在死区, 用以所述第三场效应管和所述第四 场效应管实现零电压开关;
所述第一驱动信号和所述第三驱动信号的相位差为 180度;
所述第二驱动信号和所述第四驱动信号的相位差为 180度。
20、 根据权利要求 19所述的功率开关管的驱动方法, 其特征在于, 所 述根据输入的一组驱动信号, 为变压器的励磁绕组加电具体为:
所述一组驱动信号按照预设频率发生变化时, 根据所述变压器的励磁绕 组与所述全桥结构的连接关系, 为所述变压器的励磁绕组加电; 所述变压器 的励磁绕组与所述全桥结构的连接关系为所述变压器的励磁绕组的一端与所 述全桥结构的一个桥臂中点连接, 所述变压器的励磁绕组的另一端与所述全 桥结构的另一个桥臂中点连接。
21、 根据权利要求 17所述的功率开关管的驱动方法, 其特征在于, 所 述通过所述变压器的所述励磁绕组为功率开关管的控制端输入驱动电压信 号, 或者通过所述变压器的输出绕组对所述励磁绕组感应的感应电压为功率 开关管的控制端输入驱动电压信号具体为:
所述功率开关管的控制端与所述变压器的励磁绕组的一端相连接时, 所 述变压器的励磁绕组的一端的端电压为所述功率开关管的控制端提供驱动电 压信号;
所述功率开关管的控制端与所述变压器的输出绕组相连接时, 所述变压 器的输出绕组对所述励磁绕组感应的感应电压为所述功率开关管的控制端提 供驱动电压信号。
22、 根据权利要求 20所述的功率开关管的驱动方法, 其特征在于, 所 述通过所述变压器的输出绕组对所述励磁绕组感应的感应电压为功率开关管 的控制端输入驱动电压信号之前还包括: 对所述变压器的输出绕组对所述励 磁绕组感应的感应电压进行整流处理, 得到驱动电压信号。
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