WO2014022950A1 - Led package structure having multilayer transparent electrode - Google Patents
Led package structure having multilayer transparent electrode Download PDFInfo
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- WO2014022950A1 WO2014022950A1 PCT/CN2012/001069 CN2012001069W WO2014022950A1 WO 2014022950 A1 WO2014022950 A1 WO 2014022950A1 CN 2012001069 W CN2012001069 W CN 2012001069W WO 2014022950 A1 WO2014022950 A1 WO 2014022950A1
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- layer
- light
- led package
- package structure
- electrode layer
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- 239000010410 layer Substances 0.000 claims abstract description 99
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000002086 nanomaterial Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000004308 accommodation Effects 0.000 claims 4
- 230000017525 heat dissipation Effects 0.000 claims 1
- 239000012780 transparent material Substances 0.000 abstract description 3
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
Definitions
- the present invention relates to an LED package structure having a plurality of transparent electrodes, and more particularly to an LED package structure having a plurality of transparent electrodes in which the electrode layer and the protective layer are both transparent materials.
- the electrode layer and the electrical connection layer are mostly formed of a non-transparent metal or semiconductor material, which often has a great influence on the light-emitting direction and the amount of light emitted by the LED, especially in the case of high demand. In the state where the ratio is light, the light extraction efficiency is often greatly reduced.
- the invention relates to an LED package structure with a plurality of transparent electrodes, which is an LED package structure with a plurality of transparent electrodes in which the electrode layer and the protective layer are both transparent materials.
- the LED package structure with a plurality of transparent electrodes of the present invention has a substrate, a light transmissive first electrode layer, a light transmissive second electrode layer, a light transmissive protective layer, and is electrically connected A connecting electrode layer of light.
- the light output of the LED can be prevented from being blocked by the necessary electrode and the electrical connection layer, thereby achieving a more perfect light-emitting effect.
- the present invention provides an LED package structure having a plurality of transparent electrodes, comprising: a substrate on an outer surface and formed with a first accommodating area and a second accommodating space; a first electrode layer formed on the first accommodating region; a second electrode layer formed on the second accommodating region and not connected to the first electrode layer; a light emitting chip formed on the first a protective layer formed on the periphery of the light emitting chip and extending to the top surface of the light emitting chip; and a connecting electrode layer formed on one side of the protective layer and electrically connected to the light emitting chip from the top surface of the light emitting chip And a second electrode layer.
- the light output of the LED can be blocked by the electrode and the electrical connection layer to achieve a more perfect light output.
- FIG. 1 is a view showing an embodiment of an LED package structure having a plurality of transparent electrodes according to an embodiment of the present invention.
- FIG. 2 is a diagram showing an embodiment of a light emitting chip of the embodiment of FIG. 1A.
- Fig. 3 is a view showing another embodiment of an LED package structure having a plurality of transparent electrodes according to an embodiment of the present invention.
- FIG. 4 is a diagram showing an embodiment of a light emitting chip of the embodiment of FIG. 3.
- FIG. 5 is a view showing another embodiment of an LED package structure having a plurality of nano structures combined with a plurality of transparent electrodes according to an embodiment of the present invention.
- FIG. 1 is a view showing an embodiment of an LED package structure having a plurality of transparent electrodes according to an embodiment of the present invention.
- 2 is a diagram showing an embodiment of a light emitting chip of the embodiment of FIG. 1A.
- 3 is a view showing another embodiment of an LED package structure having a plurality of transparent electrodes according to an embodiment of the present invention.
- 4 is a diagram showing an embodiment of a light emitting chip of the embodiment of FIG. 3.
- FIG. 5 is a view showing another embodiment of an LED package structure having a plurality of nano-structures combined with a plurality of transparent electrodes according to an embodiment of the present invention.
- an LED package structure 100 having a plurality of transparent electrodes includes: a substrate 10 , a first electrode layer 20 , a second electrode layer 30 , and a light emitting chip 40 .
- the substrate 10 is formed of an insulating heat dissipating material, and is a base plate body of the LED package structure 100 with a plurality of transparent electrodes, which is formed with a first accommodating area separated on an outer surface. 11 and a second accommodating area 12.
- the first electrode layer 20 is made of a metal conductive material and is formed on the first accommodating area 11.
- the second electrode layer 30, which is also a metal conductive layer, is formed on the second accommodating area 12, the second electrode layer 30 is not connected to the first electrode layer 20, and the first electrode layer 20 and the second electrode
- the layer 30 is a connecting portion of the LED package structure 100 with a plurality of transparent electrodes of the present invention and electrically connected to the outside.
- a light-emitting chip 40 is formed on the first electrode layer 20, and the light-emitting chip 40 includes: a conductive reflective layer 41 combined with the first electrode layer 20; The semiconductor layer 42 is grown on the conductive reflective layer 41; a light-emitting layer 43 is grown on the P-type semiconductor layer 42; an N-type semiconductor layer 44 is grown on the light-emitting layer 43; and a conductive anti-reflective layer 45 is provided. It grows on the N-type semiconductor layer 44.
- the conductive reflective layer 41 in the light-emitting chip 40 is composed of a plurality of light-transmissive conductive layers having different refractive indices and conductive metals, wherein the conductive metal mainly provides light reflection and does not affect electrical conduction.
- the conductive anti-reflective layer 45 is composed of a plurality of light-transmissive conductive layers having different refractive indices, and the light can be completely penetrated, and the transmitted light contains visible light and invisible light.
- the protective layer 50 is formed of a light-transmissive insulating material, which may be silicon dioxide or aluminum oxide or titanium dioxide or zinc oxide or other light-transmissive insulating material.
- the protective layer 50 is formed on the periphery of the light-emitting chip 40 and The edge extends to the top surface of the light-emitting chip 40, fixes and protects the light-emitting chip 40 and allows light to pass through, and the transmitted light contains visible light and invisible light.
- the connecting electrode layer 60 is a light-transmitting conductive material shield formed on one side of the protective layer 50, and electrically connected to the conductive anti-reflective layer 45 and the second electrode layer 30 of the light-emitting chip 40, and can penetrate the connecting electrode layer 60. Light also contains visible light and invisible light.
- the P-type semiconductor layer 42 of the light-emitting chip 40 is electrically connected to the external electrode via the connection conductive reflective layer 41, and the N-type semiconductor layer 44 is electrically connected.
- the second electrode layer 30 is connected to the external electrically connected via the conductive anti-reflective layer 45.
- the first electrode layer 20 of the LED package structure 100 with a plurality of transparent electrodes is connected to the second electrode layer 30 of the LED package structure 100 with another multilayer transparent electrode, so that multiple sets of series are connected to form A series structure of a plurality of LED package structures 100 having a plurality of transparent electrodes.
- another LED package structure 100 having a plurality of transparent electrodes further includes: a substrate 10, a first electrode layer 20, a second electrode layer 30, and a The light emitting chip 40', a protective layer 50, and a connecting electrode layer 60.
- the difference from the LED package structure 100 with a multilayer transparent electrode of the present invention shown in FIG. 1 is only that the position of the P-type semiconductor layer 42 and the N-type semiconductor layer 44 are replaced in the semiconductor process.
- the invention shown in 4 Another kind of light-emitting chip 40, .
- the embodiment shown in Figure 3 has the same efficacy as the embodiment shown in Figure 1.
- another LED package structure 100 with multiple transparent electrodes of the present invention can further combine a plurality of nanostructures 70, and a combination of the nanostructures 70 can add a device of the present invention.
- the light-emitting efficiency of the LED package structure 100' of the multilayer transparent electrode can be a plurality of micro-lens.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
An LED package structure having multilayer transparent electrodes, comprising a substrate (10), a first light-transmitting electrode layer (20), a second light-transmitting electrode layer (30), a light-transmitting protective layer (50), a light-emitting chip (40), and a light-transmitting connection electrode layer (60). The electrode layers (20, 30) and the protective layer (50) are all made of transparent materials, thus the light emitted by the LED will not be blocked.
Description
具多层透明电极的 LED封装体结构 技术领域 LED package structure with multilayer transparent electrodes
本发明涉及一种具多层透明电极的 LED封装体结构, 特别是涉及一种 电极层与保护层皆为透光材质的具多层透明电极的 LED封装体结构。 背景技术 The present invention relates to an LED package structure having a plurality of transparent electrodes, and more particularly to an LED package structure having a plurality of transparent electrodes in which the electrode layer and the protective layer are both transparent materials. Background technique
现有习知的 LED封装体结构中的电极层及电性连接层大多以非透光的 金属或半导体材质所形成, 其对 LED的出光方向及出光量经常造成甚大的 影响, 尤其在需要高比率出光的状态下, 其出光效率常常大打折扣。 In the conventional LED package structure, the electrode layer and the electrical connection layer are mostly formed of a non-transparent metal or semiconductor material, which often has a great influence on the light-emitting direction and the amount of light emitted by the LED, especially in the case of high demand. In the state where the ratio is light, the light extraction efficiency is often greatly reduced.
而现今针对出光量的提升的研究, 经常在电路结构及 LED半导体的形 成材质上着手, 其虽亦可达到增加出光量的效果, 但电极层及电性连接层 对出光的遮蔽却仍然存在。 Nowadays, research on the improvement of the amount of light is often carried out on the circuit structure and the formation of LED semiconductors. Although it can also increase the amount of light emitted, the shielding of the light from the electrode layer and the electrical connection layer still exists.
因此, 考虑从半导体材质、 电路结构的改良、 LED封装方法、 及电极 层与连接层遮光的排除等处全面性的考量增加出光效果, 便会形成本阶段 LED封装体发展的重点。 发明内容 Therefore, considering the comprehensive consideration of the semiconductor material, the improvement of the circuit structure, the LED packaging method, and the elimination of the shielding of the electrode layer and the connection layer, the light-emitting effect is increased, and the development of the LED package at this stage will be formed. Summary of the invention
本发明为一种具多层透明电极的 LED封装体结构, 其为电极层与保护 层皆为透光材质的具多层透明电极的 LED封装体结构。 本发明的一种具多 层透明电极的 LED封装体结构, 其具有一基板、 透光的第一电极层、 透光 的第二电极层、 透光的保护层、 与做为电性连接透光的一连接电极层。 借 由本发明的实施, LED 的出光可以不受必须具备的电极与电性连接层的阻 挡, 达到更完美的出光的功效。 The invention relates to an LED package structure with a plurality of transparent electrodes, which is an LED package structure with a plurality of transparent electrodes in which the electrode layer and the protective layer are both transparent materials. The LED package structure with a plurality of transparent electrodes of the present invention has a substrate, a light transmissive first electrode layer, a light transmissive second electrode layer, a light transmissive protective layer, and is electrically connected A connecting electrode layer of light. With the implementation of the present invention, the light output of the LED can be prevented from being blocked by the necessary electrode and the electrical connection layer, thereby achieving a more perfect light-emitting effect.
为达上述功效, 本发明提供一种具多层透明电极的 LED封装体结构, 其包括: 一基板, 其在一外表面上并形成有相分隔的一第一容置区及一第 二容置区; 一第一电极层, 形成于第一容置区上; 一第二电极层, 形成于 第二容置区上, 并不与第一电极层相连接; 一发光芯片, 形成于第一电极 层上; 一保护层, 形成于发光芯片的周边并延伸至发光芯片顶面边缘; 以 及一连接电极层, 形成于保护层的一側边, 并自发光芯片顶面电性连接发 光芯片与第二电极层。 In order to achieve the above effects, the present invention provides an LED package structure having a plurality of transparent electrodes, comprising: a substrate on an outer surface and formed with a first accommodating area and a second accommodating space; a first electrode layer formed on the first accommodating region; a second electrode layer formed on the second accommodating region and not connected to the first electrode layer; a light emitting chip formed on the first a protective layer formed on the periphery of the light emitting chip and extending to the top surface of the light emitting chip; and a connecting electrode layer formed on one side of the protective layer and electrically connected to the light emitting chip from the top surface of the light emitting chip And a second electrode layer.
借由本发明的实施, 至少可达到下列进步功效: By the implementation of the present invention, at least the following advancements can be achieved:
1、 LED的出光可以不受电极与电性连接层的阻挡, 达到更完美的出光 的功效。 1. The light output of the LED can be blocked by the electrode and the electrical connection layer to achieve a more perfect light output.
2、 进一步结合纳米结构更可增加 LED的出光效率。
上述说明仅是本发明技术方案的概述, 为了能够更清楚了解本发明的 技术手段, 而可依照说明书的内容予以实施, 并且为了让本发明的上述和 其他目的、 特征以及优点能够更明显易懂, 以下特举较佳实施例,并配合附 图,详细说明如下。 附图的简要说明 2. Further integration of nanostructures can increase the light extraction efficiency of LEDs. The above description is only an overview of the technical solutions of the present invention, and the technical means of the present invention can be more clearly understood, and can be implemented in accordance with the contents of the specification, and the above and other objects, features and advantages of the present invention can be more clearly understood. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
图 1为本发明实施例的一种具多层透明电极的 LED封装体结构实施例 图。 1 is a view showing an embodiment of an LED package structure having a plurality of transparent electrodes according to an embodiment of the present invention.
图 2为图 1A实施例的一种发光芯片实施例图。 2 is a diagram showing an embodiment of a light emitting chip of the embodiment of FIG. 1A.
图 3为本发明实施例的另一种具多层透明电极的 LED封装体结构实施 例图。 Fig. 3 is a view showing another embodiment of an LED package structure having a plurality of transparent electrodes according to an embodiment of the present invention.
图 4为图 3实施例的一种发光芯片实施例图。 4 is a diagram showing an embodiment of a light emitting chip of the embodiment of FIG. 3.
图 5 为本发明实施例的又一种结合有多个纳米结构的具多层透明电极 的 LED封装体结构实施例图。 FIG. 5 is a view showing another embodiment of an LED package structure having a plurality of nano structures combined with a plurality of transparent electrodes according to an embodiment of the present invention.
【主要元件符号说明】 [Main component symbol description]
100, 100, 100, , 具多层透明电极的 LED封装体结构 100, 100, 100, , LED package structure with multilayer transparent electrodes
10 基板 11 第一容置区 10 substrate 11 first accommodating area
12 第二容置区 20 第一电极层 12 second accommodating area 20 first electrode layer
30 第二电极层 40, 40, 发光芯片 30 second electrode layer 40, 40, light emitting chip
41 导电反射层 42 P型半导体层 41 conductive reflective layer 42 P-type semiconductor layer
43 发光层 44 N型半导体层 43 light-emitting layer 44 N-type semiconductor layer
45 导电抗反射层 50保护层 45 conductive anti-reflective layer 50 protective layer
60 连接电极层 70 纳米结构 实现发明的最佳方式 60 connecting electrode layer 70 nanostructures the best way to achieve the invention
图 1为本发明实施例的一种具多层透明电极的 LED封装体结构实施例 图。 图 2为图 1A实施例的一种发光芯片实施例图。 图 3为本发明实施例的 另一种具多层透明电极的 LED封装体结构实施例图。 图 4为图 3实施例的 一种发光芯片实施例图。 图 5 为本发明实施例的又一种结合有多个纳米结 构的具多层透明电极的 LED封装体结构实施例图。 1 is a view showing an embodiment of an LED package structure having a plurality of transparent electrodes according to an embodiment of the present invention. 2 is a diagram showing an embodiment of a light emitting chip of the embodiment of FIG. 1A. 3 is a view showing another embodiment of an LED package structure having a plurality of transparent electrodes according to an embodiment of the present invention. 4 is a diagram showing an embodiment of a light emitting chip of the embodiment of FIG. 3. FIG. 5 is a view showing another embodiment of an LED package structure having a plurality of nano-structures combined with a plurality of transparent electrodes according to an embodiment of the present invention.
如图 1所示, 为本发明的一种具多层透明电极的 LED封装体结构 100, 其 包括: 一基板 10、 一第一电极层 20、 一第二电极层 30、 一发光芯片 40、 一 保护层 50、 及一连接电极层 60。 As shown in FIG. 1 , an LED package structure 100 having a plurality of transparent electrodes according to the present invention includes: a substrate 10 , a first electrode layer 20 , a second electrode layer 30 , and a light emitting chip 40 . A protective layer 50 and a connection electrode layer 60.
基板 10, 其为绝缘散热材质所形成, 为本发明的一种具多层透明电极 的 LED封装体结构 100的基部板体, 其在一外表面上形成有相分隔的一第 一容置区 11及一第二容置区 12。
第一电极层 20, 其为金属导电材质, 并形成于第一容置区 11上。 第二电极层 30, 其亦为金属导电村质, 并形成于第二容置区 12上, 第 二电极层 30不与第一电极层 20相连接, 而且第一电极层 20与第二电极层 30为本发明的一种具多层透明电极的 LED封装体结构 100与外部电性相连 的两个连接部份。 The substrate 10 is formed of an insulating heat dissipating material, and is a base plate body of the LED package structure 100 with a plurality of transparent electrodes, which is formed with a first accommodating area separated on an outer surface. 11 and a second accommodating area 12. The first electrode layer 20 is made of a metal conductive material and is formed on the first accommodating area 11. The second electrode layer 30, which is also a metal conductive layer, is formed on the second accommodating area 12, the second electrode layer 30 is not connected to the first electrode layer 20, and the first electrode layer 20 and the second electrode The layer 30 is a connecting portion of the LED package structure 100 with a plurality of transparent electrodes of the present invention and electrically connected to the outside.
如图 2所示, 为本发明的一种发光芯片 40, 形成于笫一电极层 20之 上, 发光芯片 40包括有: 一导电反射层 41 , 其与第一电极层 20相结合; 一 P型半导体层 42 , 成长于导电反射层 41上; 一发光层 43, 成长于 P型半导 体层 42上; 一 N型半导体层 44 , 成长于发光层 43上; 及一导电抗反射层 45 , 其成长于 N型半导体层 44上。 As shown in FIG. 2, a light-emitting chip 40 is formed on the first electrode layer 20, and the light-emitting chip 40 includes: a conductive reflective layer 41 combined with the first electrode layer 20; The semiconductor layer 42 is grown on the conductive reflective layer 41; a light-emitting layer 43 is grown on the P-type semiconductor layer 42; an N-type semiconductor layer 44 is grown on the light-emitting layer 43; and a conductive anti-reflective layer 45 is provided. It grows on the N-type semiconductor layer 44.
发光芯片 40中的导电反射层 41由多层折射率不同的透光导电层与导 电金属所组成, 其中导电金属主要是提供光线反射且不影响电性导通。 而 导电抗反射层 45由多层折射率不同的透光导电层所组成, 光线对其可全部 穿透, 穿透的光线包含可见光及不可见光。 The conductive reflective layer 41 in the light-emitting chip 40 is composed of a plurality of light-transmissive conductive layers having different refractive indices and conductive metals, wherein the conductive metal mainly provides light reflection and does not affect electrical conduction. The conductive anti-reflective layer 45 is composed of a plurality of light-transmissive conductive layers having different refractive indices, and the light can be completely penetrated, and the transmitted light contains visible light and invisible light.
保护层 50, 为透光绝缘材质所形成, 此透光绝缘材质可为二氧化硅或 三氧化二铝或二氧化钛或氧化锌或其他透光绝缘材质, 保护层 50形成于发 光芯片 40的周边且延伸至发光芯片 40顶面的边缘, 固定及保护发光芯片 40并且可让光线穿透, 穿透的光线包含可见光及不可见光。 The protective layer 50 is formed of a light-transmissive insulating material, which may be silicon dioxide or aluminum oxide or titanium dioxide or zinc oxide or other light-transmissive insulating material. The protective layer 50 is formed on the periphery of the light-emitting chip 40 and The edge extends to the top surface of the light-emitting chip 40, fixes and protects the light-emitting chip 40 and allows light to pass through, and the transmitted light contains visible light and invisible light.
连接电极层 60, 为透光导电材盾, 形成于保护层 50的一侧边, 并电 性连接发光芯片 40的导电抗反射层 45与第二电极层 30, 可穿透连接电极 层 60的光线亦包含可见光及不可见光。 The connecting electrode layer 60 is a light-transmitting conductive material shield formed on one side of the protective layer 50, and electrically connected to the conductive anti-reflective layer 45 and the second electrode layer 30 of the light-emitting chip 40, and can penetrate the connecting electrode layer 60. Light also contains visible light and invisible light.
本发明的一种具多层透明电极的 LED封装体结构 100中发光芯片 40的 P型半导体层 42经由连接导电反射层 41再连接第一电极层 20与外部电性 相连, N型半导体层 44经由连接导电抗反射层 45再连接第二电极层 30与 外部电性相连。 In the LED package structure 100 of the present invention, the P-type semiconductor layer 42 of the light-emitting chip 40 is electrically connected to the external electrode via the connection conductive reflective layer 41, and the N-type semiconductor layer 44 is electrically connected. The second electrode layer 30 is connected to the external electrically connected via the conductive anti-reflective layer 45.
将多个具多层透明电极的 LED封装体结构 100的第一电极层 20彼此相 连, 且将上述具多层透明电极的 LED封装体结构 100的第二电极层 30彼此 相连时, 便形成多个具多层透明电极的 LED封装体结构 100的并联结构。 When the plurality of first electrode layers 20 of the LED package structure 100 having the plurality of transparent electrodes are connected to each other, and the second electrode layers 30 of the LED package structure 100 having the plurality of transparent electrodes are connected to each other, a plurality of layers are formed. A parallel structure of LED package structures 100 with multiple layers of transparent electrodes.
将一具多层透明电极的 LED封装体结构 100的第一电极层 20与另一具 多层透明电极的 LED封装体结构 100的第二电极层 30相连, 如此做多组串 接, 便形成多个具多层透明电极的 LED封装体结构 100的串联结构。 The first electrode layer 20 of the LED package structure 100 with a plurality of transparent electrodes is connected to the second electrode layer 30 of the LED package structure 100 with another multilayer transparent electrode, so that multiple sets of series are connected to form A series structure of a plurality of LED package structures 100 having a plurality of transparent electrodes.
又如图 3所示, 为本发明的另一种具多层透明电极的 LED封装体结构 100, , 其亦包括: 一基板 10、 一第一电极层 20、 一第二电极层 30、 一发 光芯片 40' 、一保护层 50、 及一连接电极层 60。 其与图 1所示本发明的一 种具多层透明电极的 LED封装体结构 100的差别,仅在于半导体制程中其 P 型半导体层 42与 N型半导体层 44的位置对换而形成如图 4所示的本发明
的另一种发光芯片 40, 。 如图 3所示的实施例, 其功效与如图 1所示的实 施例完全相同。 As shown in FIG. 3, another LED package structure 100 having a plurality of transparent electrodes according to the present invention further includes: a substrate 10, a first electrode layer 20, a second electrode layer 30, and a The light emitting chip 40', a protective layer 50, and a connecting electrode layer 60. The difference from the LED package structure 100 with a multilayer transparent electrode of the present invention shown in FIG. 1 is only that the position of the P-type semiconductor layer 42 and the N-type semiconductor layer 44 are replaced in the semiconductor process. The invention shown in 4 Another kind of light-emitting chip 40, . The embodiment shown in Figure 3 has the same efficacy as the embodiment shown in Figure 1.
再如图 5 所示, 本发明的又一种具多层透明电极的 LED封装体结构 100, , 进一步可结合多个纳米结构 70, 借由纳米结构 70的结合可增加本 发明的一种具多层透明电极的 LED封装体结构 100 ' , 的出光效率,这些纳 米结构 70可为多个微镜片(micro-lens)。 As shown in FIG. 5, another LED package structure 100 with multiple transparent electrodes of the present invention can further combine a plurality of nanostructures 70, and a combination of the nanostructures 70 can add a device of the present invention. The light-emitting efficiency of the LED package structure 100' of the multilayer transparent electrode can be a plurality of micro-lens.
以上所述, 仅是本发明的较佳实施例而已, 并非对本发明作任何形式 上的限制, 虽然本发明已以较佳实施例揭示如上, 然而并非用以限定本发 明,任何熟悉本专业的技术人员, 在不脱离本发明技术方案范围内,当可利 用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但 凡是未脱离本发明技术方案的内容, 依据本发明的技术实盾对以上实施例 所作的任何简单修改、 等同变化与修饰, 均仍属于本发明技术方案的范围 内。
The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Although the present invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. The skilled person can make some modifications or modifications to the equivalent embodiments by using the above-disclosed technical contents without departing from the technical scope of the present invention, but without departing from the technical solution of the present invention, according to the present invention. Any simple modifications, equivalent changes and modifications made to the above embodiments are still within the scope of the technical solutions of the present invention.
Claims
1、 一种具多层透明电极的 LED封装体结构, 其特征在于包括: 一基板, 其为绝缘散热材质所形成, 并在一外表面上形成有相分隔的 一第一容置区及一第二容置区; 1. An LED package structure with multi-layer transparent electrodes, characterized by including: a substrate, which is made of insulating heat dissipation material, and has a first accommodation area and a first accommodation area separated on an outer surface. Second containment area;
一第一电极层, 形成于该第一容置区上; A first electrode layer is formed on the first accommodation area;
一第二电极层, 形成于该第二容置区上, 并不与该第一电极层相连接; 一发光芯片, 形成于该第一电极层上, 该发光芯片包括: 一导电反射 层, 与该第一电极层相结合; 一 P型半导体层, 成长于该导电反射层上; 一 发光层, 成长于该 P型半导体层 J ; 一 N型半导体层, 成长于该发光层上; 及 一导电抗反射层, 其成长于该 N型半导体层上; A second electrode layer is formed on the second accommodation area and is not connected to the first electrode layer; a light-emitting chip is formed on the first electrode layer, the light-emitting chip includes: a conductive reflective layer, Combined with the first electrode layer; a P-type semiconductor layer, grown on the conductive reflective layer; a light-emitting layer, grown on the P-type semiconductor layer J; an N-type semiconductor layer, grown on the light-emitting layer; and A conductive anti-reflection layer grown on the N-type semiconductor layer;
一保护层,形成于该发光芯片的周边并延伸至该发光芯片顶面边缘; 以 及 A protective layer is formed around the periphery of the light-emitting chip and extends to the top edge of the light-emitting chip; and
一连接电极层, 形成于该保护层的一侧边, 并电性连接该导电抗反射 层与该第二电极层。 A connecting electrode layer is formed on one side of the protective layer and electrically connects the conductive anti-reflection layer and the second electrode layer.
2、 如权利要求 1所述的 LED封装体结构, 其特征在于其中该第一电极 层与该第二电极层皆为金属导电材盾所形成。 2. The LED package structure of claim 1, wherein the first electrode layer and the second electrode layer are both formed of metal conductive material shields.
3、如权利要求 1所述的 LED封装体结构, 其特征在于其中该导电反射 层由多层折射率不同的透光导电层与导电金属所组成。 3. The LED package structure of claim 1, wherein the conductive reflective layer is composed of multiple layers of light-transmitting conductive layers with different refractive indexes and conductive metal.
4、 如权利要求 1所述的 LED封装体结构, 其特征在于其中该导电抗反 射层由多层折射率不同的透光导电层所组成。 4. The LED package structure of claim 1, wherein the conductive anti-reflection layer is composed of multiple light-transmitting conductive layers with different refractive indexes.
5、如权利要求 1所述的 LED封装体结构, 其特征在于其中该保护层为 透光绝缘材质所形成。 5. The LED package structure of claim 1, wherein the protective layer is made of a light-transmitting insulating material.
6、 如权利要求 1所述的 LED封装体结构, 其特征在于其中该保护层为 二氧化硅或三氧化二铝或二氧化钛或氧化锌所形成。 6. The LED package structure of claim 1, wherein the protective layer is formed of silicon dioxide, aluminum oxide, titanium dioxide, or zinc oxide.
7、 如权利要求 1所述的 LED封装体结构, 其特征在于其中该連接电极 层为透光导电材质所形成。 7. The LED package structure of claim 1, wherein the connection electrode layer is made of a light-transmitting conductive material.
8、如权利要求 1所述的 LED封装体结构, 其特征在于其中该 LED封装 体结构的外表面进一步结合多个纳米结构。
8. The LED package structure of claim 1, wherein an outer surface of the LED package structure is further combined with a plurality of nanostructures.
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