WO2014019384A1 - 电源模块和电源模块的封装方法 - Google Patents

电源模块和电源模块的封装方法 Download PDF

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Publication number
WO2014019384A1
WO2014019384A1 PCT/CN2013/073950 CN2013073950W WO2014019384A1 WO 2014019384 A1 WO2014019384 A1 WO 2014019384A1 CN 2013073950 W CN2013073950 W CN 2013073950W WO 2014019384 A1 WO2014019384 A1 WO 2014019384A1
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WIPO (PCT)
Prior art keywords
lead frame
electrical winding
semiconductor chip
power module
electrically connected
Prior art date
Application number
PCT/CN2013/073950
Other languages
English (en)
French (fr)
Inventor
段志华
侯召政
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to EP16184829.6A priority Critical patent/EP3174185B1/en
Priority to ES13824822.4T priority patent/ES2613004T3/es
Priority to EP13824822.4A priority patent/EP2802064B1/en
Publication of WO2014019384A1 publication Critical patent/WO2014019384A1/zh

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Definitions

  • Embodiments of the present invention relate to electronic technologies, and in particular, to a power module and a power module packaging method. Background technique
  • the main components of the power module include power switches, integrated circuits (ICs), and passive components.
  • passive components include magnetic devices, resistors and capacitors.
  • the magnetic device can be an inductor.
  • Metal oxide semiconductor field effect transistors are commonly used in power switches.
  • MOSFET Metallic Oxide Semiconductor Field Effect Transistor
  • IGBT Insulated Gate Bipolar Transistor
  • IC can be a driver chip or a PWM control chip, or a combination of the two.
  • power supply manufacturers and semiconductor manufacturers in the power module packaging integration solutions use integrated MOSFET, IC, passive device structure, PCB or other lead frame, using gold or copper wire bonding, MOSFET As a switch, controlled or driven by the IC, the pulse width modulation of the input power supply is completed, and the voltage required by the inductor, capacitor filter, and output load is obtained.
  • the magnetic devices in power modules are typically patch-type magnetic devices, or wound magnetic devices that contain magnetic core materials.
  • the chip type magnetic device has a small inductance value, which cannot meet the requirements of power density and power efficiency, and the reliability of the power module is lowered.
  • the wound magnetic component including the core material has a large inductance value, but the packaged winding magnetic device is used in the power module, the solder joint cracking risk is high, the failure probability is high, and the reliability is low.
  • Embodiments of the present invention provide a power module and a power module packaging method for reducing a failure probability of a wound magnetic device in a power module and improving reliability of the power module.
  • an embodiment of the present invention provides a power module, including:
  • a lead frame an integrated circuit, a passive device, and at least one semiconductor chip; at least one of the passive devices is assembled by a magnetic core and an electrical winding Separate magnetic device;
  • One end of the electrical winding is electrically connected to the lead frame, and one end of the electrical winding is electrically connected to the integrated circuit and a passive device other than all magnetic devices through the lead frame; One end is directly connected to the semiconductor chip.
  • an embodiment of the present invention further provides a method for packaging a power module, including: mounting at least one semiconductor chip and passive components other than the magnetic device and an integrated circuit on the lead frame;
  • a separate magnetic device assembled by a magnetic core and an electrical winding is mounted on the lead frame;
  • At least one magnetic device in the power module is a separate magnetic device assembled by a magnetic core and an electrical winding during the process of packaging the power module, and is not a separately packaged magnetic device.
  • the one end of the electrical winding of the separate magnetic device is directly connected to the semiconductor chip, and does not need to be electrically connected to the semiconductor chip through the lead frame.
  • the magnetic device in the power module provided by the embodiment of the invention is a separate magnetic device, which is reduced.
  • the mechanical stress of the magnetic device and the lead frame is electrically connected, which improves the heat dissipation performance and reduces the failure probability of the magnetic device.
  • one end of the electrical winding of the separate magnetic device is directly connected to the semiconductor chip, thereby reducing the connection between the internal components of the power module, reducing the impedance and improving the efficiency of the power module.
  • FIG. 1 is a schematic structural diagram of a power module according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of another power supply module provided by the implementation of the present invention.
  • FIG. 3 is a flowchart of a method for packaging a power module according to an embodiment of the present invention
  • FIG. 4 is a flowchart of step 32 in FIG. detailed description
  • the power module provided by the embodiment of the invention includes a lead frame, an integrated circuit, a passive device, and At least one semiconductor chip.
  • the semiconductor chip may be a MOSFET, an IGBT, or a combination of an IGBT and a MOSFET.
  • the power module provided by the embodiment of the invention can be mounted on the PCB mother board through a lead frame.
  • At least one of the above passive devices is a separate magnetic device including a magnetic core and an electrical winding.
  • the power module provided by the embodiment of the present invention has at least one separate magnetic device.
  • the separated magnetic device is a magnetic device assembled by a magnetic core and an electrical winding in a package power module, and the external is not packaged, and is not separately packaged magnetic.
  • the material of the above electrical winding may be metal such as gold, aluminum or copper, and may have any suitable width and thickness.
  • One end of the electrical winding of the above-described split magnetic device is electrically connected to the lead frame such that one end of the above-mentioned electrical winding is electrically connected to the integrated circuit and passive devices other than all of the magnetic devices through the lead frame.
  • the other end of the electrical winding of the separate magnetic device is directly electrically connected to the semiconductor chip, and does not need to be electrically connected to the semiconductor chip through the lead frame.
  • the electrical connection between the electrical winding and the lead frame and the semiconductor chip can be bonded by soldering, bonding or conductive bonding, and is not limited to the above three.
  • the electric winding is an aluminum strip, and one end of the electric winding is electrically connected to the lead frame by bonding or bonding, and the other end of the electric winding is directly connected to the semiconductor chip by bonding or bonding.
  • Electrical connection by bonding or bonding can reduce the connection between devices inside the power module, reduce parasitic parameters, reduce losses, and improve power efficiency.
  • the integrated circuit is connected to the semiconductor chip and the passive device through a lead frame.
  • the power module may include two semiconductor chips, wherein a source of one semiconductor chip is electrically connected to a gate of another semiconductor chip; and the other end of the electrical winding is directly connected to a source of a semiconductor chip. The other end of the electrical winding is also directly electrically coupled to the gate of another semiconductor chip.
  • At least one magnetic device is a separate magnetic device assembled by a magnetic core and an electrical winding during packaging of the power module, and is not a separately packaged magnetic device.
  • the one end of the electrical winding of the separate magnetic device is directly connected to the semiconductor chip, and does not need to be electrically connected to the semiconductor chip through the lead frame.
  • the magnetic device in the power module provided by the embodiment of the invention is a separate magnetic device, which is reduced.
  • the mechanical stress of the magnetic device and the lead frame is electrically connected, which improves the heat dissipation performance and reduces the failure probability of the magnetic device.
  • one end of the electrical winding of the separate magnetic device is directly connected to the semiconductor chip, because It also reduces the connection between the internal components of the power module, reduces the impedance, and improves the efficiency of the power module.
  • FIG. 1 is a schematic structural diagram of a power module according to an embodiment of the present invention.
  • the power module provided in this embodiment includes a magnetic device which is a separate magnetic device assembled by two half cores and an electrical winding.
  • the core of the split magnetic device comprises two opposing half cores, and the electrical windings are arranged in the space where the two half cores meet.
  • a projection is provided in the middle of one side of each of the semi-magnetic cores, for example, a projecting cylinder, and the two core halves are disposed by the intermediate projections.
  • the split type magnetic device in this embodiment includes a half core 21, a half core 22, and an electrical winding 23.
  • a projecting portion is provided in the middle of the half core 21 and the half core 22, and the half core 21 and the half core 22 are disposed to face each other by the projecting portion.
  • the electric winding 23 is disposed in a space where the half core 21 and the half core 22 are opposed, and therefore, the electric winding 23 is wrapped by the half core 21 and the half core 22.
  • One end 231 of the electrical winding 23 is electrically connected to the lead frame 1, that is, one end 231 of the electrical winding 23 is electrically connected to the integrated circuit 5 and a passive device other than the magnetic device through the lead frame 1.
  • the power module includes two cascaded semiconductor chip, and the source of the semiconductor chip 3 is electrically connected to the gate of the semiconductor chip 4.
  • the other end 232 of the electrical winding 23 is directly electrically connected to the semiconductor chip 3 and the semiconductor chip 4, that is, the other end of the electrical winding 23 is directly electrically connected to the source of the semiconductor chip 3, and directly to the semiconductor chip 4.
  • the gate is electrically connected.
  • the semiconductor chip 3 and the semiconductor chip 4 are also electrically connected to the integrated circuit 5 through a lead frame.
  • the separate magnetic device in this embodiment is not separately fabricated, but is assembled in a module packaging process.
  • a half core having a protruding portion in the middle is mounted on the lead frame, and a side of the half core having no protruding portion is disposed on the lead
  • the electrical windings are placed on the half core.
  • one end of the electrical winding is connected to the lead frame, and the other end is directly connected to the semiconductor chip.
  • the middle protruding portion of the other half core is placed on the protruding portion of the mounted half core, and the magnetic circuit of the electric winding is closed.
  • FIG. 2 is a schematic structural diagram of another power module according to an embodiment of the present invention.
  • the separated magnetic device is assembled by a magnetic core and an electrical winding, and the electrical winding is wound around the outside of the magnetic core.
  • the outer core of the magnetic core 61 is wound with an electrical winding 62, and the magnetic core wound with the electrical winding 62 is assembled into a separate magnetic device.
  • One end 621 of the electric winding 62 is electrically connected to the lead frame 1, that is, one end 621 of the electric winding 62 is electrically connected to the integrated circuit 5 and a passive device other than the magnetic device through the lead frame 1.
  • the power module includes two cascaded semiconductor chip, and the source of the semiconductor chip 3 is electrically connected to the gate of the semiconductor chip 4.
  • the other end 622 of the electrical winding 62 is directly electrically connected to the semiconductor chip 3 and the semiconductor chip 4, that is, the other end 622 of the electrical winding 62 is directly electrically connected to the source of the semiconductor chip 3, and directly to the semiconductor chip 4.
  • the gate is electrically connected.
  • the other end 622 of the electrical winding 62 is connected to the top of the semiconductor chip, and the bottom of the semiconductor chip is connected to the lead frame by solder and connected to the bottom electrical winding of the magnetic core 61.
  • the separate magnetic devices in this embodiment are not fabricated separately, but are assembled in a module packaging process. First, an externally wound magnetic core is mounted on the lead frame, and then the exposed end of the electrical winding is connected to the lead frame, and the exposed end is directly electrically connected to the semiconductor chip.
  • the electrical winding may be a metal strip-shaped twisted wire, and the number of turns may be a single turn, and may be a plurality of turns.
  • the turns are connected in series or in parallel, and one end of each turn is electrically connected to the lead frame by mechanical pressing.
  • the electrical winding is an aluminum strip, and one end of the electrical winding is electrically connected to the lead frame by bonding or bonding, and the other end of the electrical winding is bonded or bonded.
  • the connection mode is directly connected to the semiconductor chip.
  • the semiconductor chip is a vertical semiconductor device.
  • the lead frame may be obtained by a stamping process known in the art, or may be obtained by a predetermined pattern obtained by etching a conductive plate or by a combination of a stamping process and an etching process. Therefore, the lead frame structure in this embodiment may be a continuous or discontinuous metal structure.
  • the leadframe structure comprises any suitable material, may have any suitable form and thickness, and also includes a metal plating such as a silver plating, a nickel gold plating, a nickel palladium gold plating, or the like on the lead frame.
  • Exemplary leadframe body materials include copper, aluminum and alloys thereof, iron-nickel alloys, and the like.
  • the leadframes are initially one of many units in a leadframe display that are joined together by tie bars.
  • the leadframe display can be cut or die cut to provide individual seals The equipment is separated from each other.
  • the leadframe structure can have a plurality of die pad regions (DAPs) that can form a die attach pad Die Attach Pad, and the leads can be coplanar or non-coplanar with the surface of the die attach pad DAP.
  • DAPs die pad regions
  • the molding material for packaging the power module may comprise a suitable material such as a multifunctional crosslinked epoxy resin composite or the like.
  • the mold-sealing material is softened into a colloidal state in which solid and liquid coexist in a fixed cake state, and is formed by a transfer injection mold combined with a lead frame placed in the mold, and is subjected to a crosslinking reaction to be solidified.
  • FIG. 3 is a flowchart of a method for packaging a power module according to an embodiment of the present invention.
  • the packaging method provided in this embodiment includes:
  • Step 31 Mounting at least one semiconductor chip and passive devices other than the magnetic device and the integrated circuit on the lead frame.
  • Step 32 Place the separate magnetic device assembled by the core and the electrical winding on the lead frame.
  • the discrete magnetic device is a magnetic device assembled by a magnetic core and an electrical winding in a packaged power module, and the external is not packaged, and is not a separately packaged magnetic device.
  • the material of the above electrical winding may be metal such as gold, aluminum or copper, and may have any suitable width and thickness.
  • Step 33 Electrically connect one end of the electrical winding to the lead frame, and electrically connect the other end of the electrical winding directly to the semiconductor chip.
  • One end of the electrical winding of the above-described split magnetic device is electrically connected to the lead frame such that one end of the above-mentioned electrical winding is electrically connected to the integrated circuit and a passive device other than the magnetic device through the lead frame.
  • the other end of the electrical winding of the separate magnetic device is directly electrically connected to the semiconductor chip, and does not need to be electrically connected to the semiconductor chip through the lead frame.
  • the electrical connection between the electrical winding and the lead frame and the semiconductor chip can be bonded by soldering, bonding or conductive bonding, and is not limited to the above three.
  • the electric winding is an aluminum strip, and one end of the electric winding is electrically connected to the lead frame by bonding or bonding, and the other end of the electric winding is directly connected to the semiconductor chip by bonding or bonding.
  • Electrical connection by bonding or bonding can reduce the connection between devices inside the power module, reduce parasitic parameters, reduce losses, and improve power efficiency.
  • Step 34 After molding the lead frame to which the component is mounted, it is cut into a single power module.
  • the electrical windings may be metal strips, and the number of turns may be a single turn, which may be multiple turns. When the number of turns of the electric winding is large, the turns are connected in series or in parallel, and one end of each turn is electrically connected to the lead frame by mechanical pressing.
  • the semiconductor chip is a vertical semiconductor device.
  • a separate magnetic device assembled by a magnetic core and an electrical winding is mounted on a lead frame, and the separately packaged magnetic device is not mounted on the lead frame.
  • the one end of the electrical winding of the separate magnetic device is directly connected to the semiconductor chip, and does not need to be electrically connected to the semiconductor chip through the lead frame.
  • the magnetic device in the power module provided by the embodiment of the invention is a separate magnetic device, which is reduced.
  • the mechanical stress of the magnetic device being electrically connected to the lead frame improves the heat dissipation performance.
  • one end of the electrical winding of the separate magnetic device is directly connected to the semiconductor chip, thereby reducing the connection between the internal components of the power module, reducing the impedance and improving the efficiency of the power module.
  • FIG. 4 is a flow chart of step 32 of Figure 3.
  • a two-part magnetic core and an electrical winding are used to assemble a separate magnetic device.
  • the packaging method provided in this embodiment is a method for packaging the power module provided in FIG. As shown in FIG. 4, step 32 includes:
  • Step 321 Mount a half core on the lead frame.
  • Step 322 Lay the electrical windings on the half core.
  • Step 323 Place the other half core pair on the half core that has been mounted on the lead frame.
  • the specific packaging process is as follows: Prepare the lead frame, print the solder paste on the lead frame, and mount the semiconductor chip and passive components other than the magnetic device on the lead frame for cleaning. Thereafter, an integrated circuit and a semi-magnetic core are mounted on the lead frame, and the integrated circuit and the projecting half core are mounted on the lead frame with the central portion of the half core facing upward. The integrated circuit and the bottom of the core are filled and cured with a filler. The electrical winding is laid on the half core, and the two ends of the electrical winding are respectively connected to the lead frame and the semiconductor chip. The integrated circuit and the semiconductor chip are bonded together.
  • step 32 may specifically be to mount a magnetic core externally wound with an electrical winding on the lead frame.
  • the specific packaging process is as follows: Prepare the lead frame, print the solder paste on the lead frame, The semiconductor chip and passive components other than the magnetic device are mounted on the lead frame for cleaning. Thereafter, the integrated circuit and the core are dispensed on the lead frame, and the integrated circuit and the externally wound magnetic core are mounted on the lead frame. The two ends of the electrical winding are respectively bonded to the lead frame and the semiconductor chip. The integrated circuit and the semiconductor chip are bonded and connected. After the lead frame to which the component is mounted is molded, it is cut into individual power modules.
  • the above packaging method may be a method of packaging the power module provided in FIG. 2.
  • a separate magnetic device assembled by a magnetic core and an electrical winding is mounted on a lead frame, and the separately packaged magnetic device is not mounted on the lead frame.
  • the one end of the electrical winding of the separate magnetic device is directly connected to the semiconductor chip, and does not need to be electrically connected to the semiconductor chip through the lead frame.
  • the magnetic device in the power module provided by the embodiment of the invention is a separate magnetic device, which is reduced.
  • the mechanical stress of the magnetic device being electrically connected to the lead frame improves the heat dissipation performance.
  • one end of the electrical winding of the separate magnetic device is directly connected to the semiconductor chip, thereby reducing the connection between the internal components of the power module, reducing the impedance and improving the efficiency of the power module.

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Abstract

一种电源模块和电源模块的封装方法。电源模块包括引线框架（1）、集成电路（5）、无源器件和至少一个半导体裸芯片（3，4），无源器件中的至少一个磁性器件为通过磁芯（21，22）和电气绕组（23）组装成的分离式磁性器件；电气绕组的一端（231）与引线框架电连接，以使电气绕组的一端通过引线框架与集成电路和除磁性器件之外的无源器件电连接；电气绕组的另一端（232）直接与半导体裸芯片电连接。由此降低了电源模块中绕线磁性器件的失效概率，提高了电源模块的可靠性。

Description

电源模块和电源模块的封装方法
技术领域
本发明实施例涉及电子技术， 尤其涉及一种电源模块和电源模块的封 装方法。 背景技术
电源模块的主要元件包括功率开关、 集成电路（Integrated circuit, 简 称 IC )和无源器件。 其中， 无源器件包括磁性器件、 电阻和电容。 磁性器 件可以是电感。 功率开关常用的是金属氧化物半导体场效应晶体管
( MOSFET Metallic Oxide Semiconductor Field Effect Transistor , 简称 MOSFET ) 或绝缘栅极型晶体管 （Insulated Gate Bipolar Transistor, 简称 IGBT ) , IC可以是驱动芯片或 PWM控制芯片， 或两者的组合。 目前， 电源厂商和半导体厂商在电源模块方面的封装集成方案多釆用集成 MOSFET, IC、 无源器件的结构， PCB或其他引线框架， 釆用金丝或铜丝 键合的互连方式， MOSFET作为开关， 受 IC控制或驱动， 完成对输入电 源的脉宽调制， 经过电感、 电容滤波、 输出负载需要的电压。
目前， 电源模块中的磁性器件通常为贴片式磁性器件、 或包含磁芯材 料的绕线磁性器件。 贴片式磁性器件的电感值较小， 无法满足功率密度和 电源效率的需求， 电源模块的可靠性降低。 包含磁芯材料的绕线磁性器件 的电感值较大， 但电源模块中釆用的是已封装好的绕线磁性器件， 焊点开 裂风险较大， 失效概率较高， 可靠性较低。 发明内容 本发明实施例提供一种电源模块和电源模块的封装方法， 用于降低电 源模块中绕线磁性器件的失效概率， 提高电源模块的可靠性。
一方面， 本发明实施例提供一种电源模块， 包括：
引线框架、 集成电路、 无源器件和至少一个半导体棵芯片； 所述无源器件中的至少一个磁性器件为通过磁芯和电气绕组组装成 的分离式磁性器件；
所述电气绕组的一端与所述引线框架电连接， 所述电气绕组的一端通 过所述引线框架与所述集成电路和除所有磁性器件之外的无源器件电连 接； 所述电气绕组的另一端直接与所述半导体棵芯片电连接。
另一方面， 本发明实施例还提供一种电源模块的封装方法， 包括： 将至少一个半导体棵芯片和除磁性器件之外的无源器件以及集成电 路贴装在引线框架上；
将通过磁芯和电气绕组组装成的分离式磁性器件， 贴装在所述引线框 架上；
将所述电气绕组的一端与所述引线框架电连接， 将所述电气绕组的另 一端直接与所述半导体棵芯片电连接；
对贴装有元件的引线框架进行塑封后， 切割成单个电源模块。
本发明实施例提供的技术方案中， 电源模块中的至少一个磁性器件为 在封装电源模块过程中通过磁芯和电气绕组组装而成的分离式磁性器件， 不是单独封装好的封装式磁性器件。 该分离式磁性器件的电气绕组的一端 直接与半导体棵芯片电连接， 不需要通过引线框架与半导体棵芯片电连 接， 由于本发明实施例提供的电源模块中磁性器件为分离式磁性器件， 减 少了磁性器件与引线框架电连接的机械应力， 提高了散热性能， 降低了磁 性器件的失效概率。 同时该分离式磁性器件的电气绕组的一端直接与半导 体棵芯片电连接， 因而还减少了电源模块内部器件之间的连接线， 降低了 阻抗， 提高了电源模块的效率。 附图说明
图 1为本发明实施倒提供的一种电源模块结构示意图；
图 2为本发明实施倒提供的另一种电源模块结构示意图；
图 3为本发明实施例提供的一种电源模块的封装方法流程图； 图 4为图 3中步骤 32的一种流程图。 具体实施方式
本发明实施例提供的电源模块包括引线框架、 集成电路、 无源器件和 至少一个半导体棵芯片。 其中， 所述半导体棵芯片可以 MOSFET, 也可以 是 IGBT, 或者为 IGBT和 MOSFET的组合。 本发明实施例提供的电源模 块可通过引线框架安装在 PCB母板上。
上述无源器件中的至少一个磁性器件为包括磁芯和电气绕组的分离 式磁性器件。 本发明实施例提供的电源模块至少有一个分离式磁性器件， 分离式磁性器件为在封装电源模块中通过磁芯和电气绕组组装而成的磁 性器件， 外部没有经过封装， 不是单独封装好的磁性器件。 上述电气绕组 的材料可以是金， 铝或铜等金属， 可以具有任何适当的宽度和厚度。
上述分离式磁性器件的电气绕组的一端与引线框架电连接， 以使上述 电气绕组的一端通过引线框架与集成电路和除所有磁性器件之外的无源 器件电连接。 上述分离式磁性器件的电气绕组的另一端直接与半导体棵芯 片电连接， 不需要通过引线框架与半导体棵芯片电连接。
电气绕组与引线框架和半导体棵芯片的电连接， 可以釆用焊接， 键合 或导电胶粘接， 不限于以上三种。 优选地， 电气绕组为铝带， 电气绕组的 一端釆用键合方式或粘接方式与引线框架电连接， 电气绕组的另一端釆用 键合方式或粘接方式直接与半导体棵芯片电连接。 釆用键合或粘接方式进 行电连接， 可减少电源模块内部器件之间的连接线、 减少寄生参数、 减小 损耗， 提高电源效率。
集成电路通过引线框架与半导体棵芯片和无源器件连接。
进一步， 电源模块可包括两个半导体棵芯片， 其中， 一个半导体棵芯 片的源极与另一个半导体棵芯片的栅极电连接； 电气绕组的另一端直接与 一个半导体棵芯片的源极电连接， 电气绕组的另一端还直接与另一个半导 体棵芯片的栅极电连接。
本实施例提供的电源模块中， 至少有一个磁性器件为在封装电源模块 过程中通过磁芯和电气绕组组装而成的分离式磁性器件， 不是单独封装好 的封装式磁性器件。 该分离式磁性器件的电气绕组的一端直接与半导体棵 芯片电连接， 不需要通过引线框架与半导体棵芯片电连接， 由于本发明实 施例提供的电源模块中磁性器件为分离式磁性器件， 减少了磁性器件与引 线框架电连接的机械应力，提高了散热性能，降低了磁性器件的失效概率。 同时该分离式磁性器件的电气绕组的一端直接与半导体棵芯片电连接， 因 而还减少了电源模块内部器件之间的连接线， 降低了阻抗， 提高了电源模 块的效率。
图 1为本发明实施倒提供的一种电源模块结构示意图。 本实施例提供 的电源模块中包括一个磁性器件， 该磁性器件为通过两个半磁芯和电气绕 组组装而成的分离式磁性器件。 分离式磁性器件的磁芯包括两个对合设置 的半磁芯， 电气绕组设置在两个半磁芯对合的空间中。 优选地， 每个半磁 芯的一面的中间设置有突出部分， 例如突出圓柱， 两个半磁芯通过中突部 分对合设置。
如图 1所示， 本实施例中的分离式磁性器件包括半磁芯 21、 半磁芯 22和电气绕组 23。 半磁芯 21和半磁芯 22的中间均设置有突出部分， 半 磁芯 21和半磁芯 22通过中突部分对合设置。 电气绕组 23设置在半磁芯 21和半磁芯 22对合的空间中， 因此， 电气绕组 23被半磁芯 21和半磁芯 22包裹。 电气绕组 23的一端 231与引线框架 1电连接， 也就是， 电气绕 组 23的一端 231通过引线框架 1与集成电路 5和除磁性器件之外的无源 器件电连接。
如图 1所示， 电源模块中包括两个级联的半导体棵芯片， 半导体棵芯 片 3的源极与半导体棵芯片 4的栅极电连接。 电气绕组 23的另一端 232 直接与半导体棵芯片 3和半导体棵芯片 4电连接， 也就是， 电气绕组 23 的另一端直接与半导体棵芯片 3的源极电连接， 还直接与半导体棵芯片 4 的栅极电连接。 半导体棵芯片 3和半导体棵芯片 4还通过引线框架与集成 电路 5电连接。
本实施例中的分离式磁性器件不是单独制作， 而是在模块封装过程中 组装而成， 先在引线框架安装一个中间具有突出部分的半磁芯， 半磁芯没 有突出部分的一面设置在引线框架上， 再将电气绕组铺设在半磁芯上。 然 后将电气绕组的一端与引线框架连接， 另一端直接与半导体棵芯片电连 接。 之后再将另外一个半磁芯中间的中突部分对合在已安装好的半磁芯的 突出部分上， 将电气绕组的磁路闭合。
图 2为本发明实施倒提供的另一种电源模块结构示意图。 本实施例提 供的电源模块中， 分离式磁性器件通过一个磁芯和电气绕组装而成， 电气 绕组沿磁芯的外部盘绕。 如图 2所示， 磁芯 61的外部盘绕有电气绕组 62, 盘绕有电气绕组 62 的磁芯组装成了分离式磁性器件。 电气绕组 62的一端 621与引线框架 1 电连接， 也就是， 电气绕组 62的一端 621通过引线框架 1与集成电路 5 和除磁性器件之外的无源器件电连接。
如图 2所示， 电源模块中包括两个级联的半导体棵芯片， 半导体棵芯 片 3的源极与半导体棵芯片 4的栅极电连接。 电气绕组 62的另一端 622 直接与半导体棵芯片 3和半导体棵芯片 4电连接， 也就是， 电气绕组 62 的另一端 622直接与半导体棵芯片 3的源极电连接， 还直接与半导体棵芯 片 4的栅极电连接。 其中， 电气绕组 62的另一端 622连接半导体棵片的 顶部， 半导体棵芯片底部用焊锡与引线框架相连， 并与磁芯 61的底部电 气绕组相连。
本实施例中的分离式磁性器件不是单独制作， 而是在模块封装过程中 组装而成。 先将外部盘绕有电气绕组的磁芯安装在引线框架上， 之后， 将 电气绕组露出的一端与引线框架连接， 露出的另一端直接与半导体棵芯片 电连接。
优选地， 图 1和图 2对应实施例中， 电气绕组可以是金属带状匝线， 匝数可为单匝， 可为多匝。 电气绕组的匝数多匝时， 各匝之间相互串联或 并联， 每匝的一端通过机械压合方式与引线框架电连接。
优选地， 图 1和图 2对应实施例中， 电气绕组为铝带， 电气绕组的一 端釆用键合方式或粘接方式与引线框架电连接， 电气绕组的另一端釆用键 合方式或粘接方式直接与半导体棵芯片电连接。
优选地， 图 1和图 2对应实施例中，半导体棵芯片为垂直半导体器件。 在上述各个实施例中， 引线框架可以是通过本领域已知的冲压工艺得 到， 也可以是釆用蚀刻导电板得到的预定图形或结合冲压工艺和蚀刻工艺 而得到。 因此， 本实施例中的引线框架结构可以是连续或者不连续的金属 结构。 引线框结构包含任何适当的材料， 可以具有任何适当的形式和厚度, 还包含引线框架上的金属镀层如银镀层， 镍金镀层， 镍钯金镀层等。 示例 性的引线框架本体材料包括铜， 铝及其合金， 铁镍合金等。 引线框架最初 是以通过系杆连接在一起的引线框架陈列中的许多单元中的一个。 在制造 半导体管芯封装的工艺期间， 引线框架陈列可以被切割或者冲切使各个封 装相互分离。 此外， 引线框架结构可以具有多个可形成管芯附联焊盘 Die Attach Pad的管芯焊盘区 （DAP ) ，引线可以与管芯附联焊盘 DAP的表面 共面或者不共面。
在上述各个实施例中， 用于封装电源模块的封模材料可以包含适合适 当的材料诸如多功能交联环氧树脂复合材料等。 封模材料以固定料饼形 态， 在高温下软化成固液共存的胶体状态， 通过转移注入模具与放置在模 具中的引线框架结合成型， 并发生交联反应后固化成型。
图 3为本发明实施例提供的一种电源模块的封装方法流程图。 本实施 例提供的封装方法包括：
步骤 31 :将至少一个半导体棵芯片和除磁性器件之外的无源器件以及 集成电路贴装在引线框架上。
步骤 32: 将通过磁芯和电气绕组组装成的分离式磁性器件， 贴装在引 线框架上。
分离式磁性器件为在封装电源模块中通过磁芯和电气绕组组装而成 的磁性器件， 外部没有经过封装， 不是单独封装好的磁性器件。 上述电气 绕组的材料可以是金， 铝或铜等金属， 可以具有任何适当的宽度和厚度。
步骤 33 : 将电气绕组的一端与引线框架电连接， 将电气绕组的另一端 直接与半导体棵芯片电连接。
上述分离式磁性器件的电气绕组的一端与引线框架电连接， 以使上述 电气绕组的一端通过引线框架与集成电路和除磁性器件之外的无源器件 电连接。 上述分离式磁性器件的电气绕组的另一端直接与半导体棵芯片电 连接， 不需要通过引线框架与半导体棵芯片电连接。
电气绕组与引线框架和半导体棵芯片的电连接， 可以釆用焊接， 键合 或导电胶粘接， 不限于以上三种。 优选地， 电气绕组为铝带， 电气绕组的 一端釆用键合方式或粘接方式与引线框架电连接， 电气绕组的另一端釆用 键合方式或粘接方式直接与半导体棵芯片电连接。 釆用键合或粘接方式进 行电连接， 可减少电源模块内部器件之间的连接线、 减少寄生参数、 减小 损耗， 提高电源效率。
步骤 34:对贴装有元件的引线框架进行塑封后，切割成单个电源模块。 优选地， 电气绕组可以是金属带状匝线， 匝数可为单匝， 可为多匝。 电气绕组的匝数多匝时， 各匝之间相互串联或并联， 每匝的一端通过机械 压合方式与引线框架电连接。
优选地， 半导体棵芯片为垂直半导体器件。
本实施例提供的封装方法， 将通过磁芯和电气绕组组装而成的分离式 磁性器件贴装在引线框架上， 并不是将单独封装后的磁性器件贴装在引线 框架上。 该分离式磁性器件的电气绕组的一端直接与半导体棵芯片电连 接， 不需要通过引线框架与半导体棵芯片电连接， 由于本发明实施例提供 的电源模块中磁性器件为分离式磁性器件， 减少了磁性器件与引线框架电 连接的机械应力， 提高了散热性能。 同时该分离式磁性器件的电气绕组的 一端直接与半导体棵芯片电连接， 因而还减少了电源模块内部器件之间的 连接线， 降低了阻抗， 提高了电源模块的效率。
图 4为图 3中步骤 32的流程图。 本实施例釆用两个半磁芯和电气绕 组组装分离式磁性器件， 本实施例提供的封装方法为封装图 1提供的电源 模块的方法。 如图 4所示， 步骤 32包括：
步骤 321 : 将一个半磁芯贴装在引线框架上。
步骤 322: 在半磁芯上铺设电气绕组。
步骤 323 : 将另一个半磁芯对合设置在已贴装在引线框架上的半磁芯 上。
具体封装过程如下： 准备引线框架， 在引线框架上印刷锡膏， 将半导 体棵芯片和除磁性器件之外的无源器件贴装在引线框架上， 进行清洗。 之 后， 在引线框架上安装集成电路和半磁芯的点胶， 将集成电路和中突的半 磁芯贴装在引线框架上， 其中半磁芯的中突部分朝上。 将集成电路和半磁 芯底部用填充胶填充并固化。 将电气绕组铺设在半磁芯上， 将电气绕组的 两端分别与引线框架和半导体棵芯片键合连接。 集成电路和半导体棵芯片 键合连接。 在已贴装在引线框架上的半磁芯的中突部分点胶， 将另一个半 磁芯的中突部分， 贴装在已贴装在引线框架上的中突部分上， 使两个半磁 芯对合设置。对贴装有元件的引线框架进行塑封后，切割成单个电源模块。
另外， 本发明还可以釆用一个外部盘绕有电气绕组的磁芯组装分离式 磁性器件。 此时， 步骤 32具体可为将外部盘绕有电气绕组的磁芯贴装在 引线框架上。具体封装过程如下： 准备引线框架， 在引线框架上印刷锡膏， 将半导体棵芯片和除磁性器件之外的无源器件贴装在引线框架上， 进行清 洗。 之后， 在引线框架上安装集成电路和磁芯的点胶， 将集成电路和外部 盘绕有电气绕组的磁芯贴装在引线框架上。 将电气绕组的两端分别与引线 框架和半导体棵芯片键合连接。 集成电路和半导体棵芯片键合连接。 对贴 装有元件的引线框架进行塑封后， 切割成单个电源模块。 上述封装方法可 为封装图 2提供的电源模块的方法。
本实施例提供的封装方法， 将通过磁芯和电气绕组组装而成的分离式 磁性器件贴装在引线框架上， 并不是将单独封装后的磁性器件贴装在引线 框架上。 该分离式磁性器件的电气绕组的一端直接与半导体棵芯片电连 接， 不需要通过引线框架与半导体棵芯片电连接， 由于本发明实施例提供 的电源模块中磁性器件为分离式磁性器件， 减少了磁性器件与引线框架电 连接的机械应力， 提高了散热性能。 同时该分离式磁性器件的电气绕组的 一端直接与半导体棵芯片电连接， 因而还减少了电源模块内部器件之间的 连接线， 降低了阻抗， 提高了电源模块的效率。
最后应说明的是： 以上实施例仅用以说明本发明的技术方案， 而非对 其限制； 尽管参照前述实施例对本发明进行了详细的说明， 本领域的普通 技术人员应当理解： 其依然可以对前述各实施例所记载的技术方案进行修 改， 或者对其中部分技术特征进行等同替换； 而这些修改或者替换， 并不 使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims

权 利 要 求 书
1、 一种电源模块， 包括引线框架、 集成电路、 无源器件和至少一个 半导体棵芯片， 其特征在于：
所述无源器件中的至少一个磁性器件为通过磁芯和电气绕组组装成 的分离式磁性器件；
所述电气绕组的一端与所述引线框架电连接， 以使所述电气绕组的 ― 端通过所述引线框架与所述集成电路和除所有磁性器件之外的无源器件 电连接； 所述电气绕组的另一端直接与所述半导体棵芯片电连接。
2、 根据权利要求 1所述的电源模块， 其特征在于， 所述磁芯包括两 个对合设置的半磁芯， 所述电气绕组设置在所述两个半磁芯对合的空间 中。
3、 根据权利要求 1所述的电源模块， 其特征在于， 所述电气绕组沿 所述磁芯的外部盘绕。
4、 根据权利要求 1至 3任一项所述的电源模块， 其特征在于， 所述 电源模块包括两个半导体棵芯片， 其中， 一个所述半导体棵芯片的源极与 另一个所述半导体棵芯片的栅极电连接； 所述电气绕组的另一端直接与一 个所述半导体棵芯片的源极电连接， 所述电气绕组的另一端还直接与另一 个所述半导体棵芯片的栅极电连接。
5、 根据权利要求 1至 4任一项所述的电源模块， 其特征在于， 所述 电气绕组为铝带， 所述电气绕组的一端釆用键合方式或粘接方式与所述引 线框架电连接， 所述电气绕组的另一端釆用键合方式或粘接方式直接与所 述半导体棵芯片电连接。
6、 根据权利要求 1至 5任一项所述的电源模块， 其特征在于， 所述 半导体棵芯片通过铝带键合方式或粘合方式与所述引线框架电连接。
7、 根据权利要求 1至 6任一项所述的电源模块， 其特征在于， 所述 电气绕组的匝数为单匝或多匝。
8、 根据权利要求 1至 6任一项所述的电源模块， 其特征在于， 所述 电气绕组的匝数为多匝时， 各匝之间相互串联或并联。
9、 根据权利要求 1至 8任一项所述的电源模块， 其特征在于， 所述 半导体棵芯片为垂直半导体器件。
10、 一种电源模块的封装方法， 其特征在于， 包括：
将至少一个半导体棵芯片和除磁性器件之外的无源器件以及集成电 路贴装在引线框架上；
将通过磁芯和电气绕组组装成的分离式磁性器件贴装在所述引线框 架上；
将所述电气绕组的一端与所述引线框架电连接， 将所述电气绕组的另 一端直接与所述半导体棵芯片电连接；
对贴装有元件的引线框架进行塑封后， 切割成单个电源模块。
1 1、 根据权利要求 10所述的方法， 其特征在于， 所述将通过磁芯和 电气绕组组装成的分离式磁性器件贴装在所述引线框架上包括：
将一个半磁芯贴装在所述引线框架上；
在所述半磁芯上铺设电气绕组，
将另一个半磁芯对合设置在已贴装在所述引线框架上的半磁芯上。
12、 根据权利要求 10所述的方法， 其特征在于， 所述将通过磁芯和 电气绕组组装成的分离式磁性器件贴装在所述引线框架上包括：
将外部盘绕有电气绕组的磁芯贴装在所述引线框架上。
13、 根据权利要求 10至 12任一项所述的方法， 其特征在于， 所述电 气绕组为铝带， 所述电气绕组的一端釆用键合方式或粘接方式与所述引线 框架电连接， 所述电气绕组的另一端釆用键合方式或粘接方式直接与所述 半导体棵芯片电连接。
14、 根据权利要求 10至 13任一项所述的方法， 其特征在于， 所述半 导体棵芯片通过铝带键合方式或粘合方式与所述引线框架电连接。
15、 根据权利要求 10至 14任一项所述的方法， 其特征在于， 所述电 气绕组的匝数为单匝或多匝。
16、 根据权利要求 10至 14任一项所述的方法， 其特征在于， 所述电 气绕组的匝数为多匝时， 各匝之间相互串联或并联。
17、 根据权利要求 10至 16任一项所述的方法， 其特征在于， 所述半 导体棵芯片为垂直半导体器件。
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EP3174185B1 (en) 2020-09-16
ES2613004T3 (es) 2017-05-19
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