Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/005—Control means for lapping machines or devices
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B37/00—Lapping machines or devices; Accessories
  • B24B37/27—Work carriers
  • B24B37/30—Work carriers for single side lapping of plane surfaces
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B24—GRINDING; POLISHING
  • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
  • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
  • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
  • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents

Definitions

• the present disclosure relates to monitoring the thickness of a retaining ring, e.g., during chemical mechanical polishing.
• An integrated circuit is typically formed on a substrate by the sequential deposition of conductive, semiconductive, or insulative layers on a silicon wafer.
• One fabrication step involves depositing a filler layer over a non-planar surface and planarizing the filler layer.
• the filler layer is planarized until the top surface of a patterned layer is exposed.
• a conductive filler layer for example, can be deposited on a patterned insulative layer to fill the trenches or holes in the insulative layer.
• the portions of the conductive layer remaining between the raised pattern of the insulative layer form vias, plugs, and lines that provide conductive paths between thin film circuits on the substrate.
• the filler layer is planarized until a
• predetermined thickness is left over the non planar surface.
• planarization of the substrate surface is usually required for photolithography.
• CMP Chemical mechanical polishing
• This planarization method typically requires that the substrate be mounted on a carrier head.
• the exposed surface of the substrate is typically placed against a rotating polishing pad.
• the carrier head provides a controllable load on the substrate to push it against the polishing pad.
• a polishing liquid such as a slurry with abrasive particles, is typically supplied to the surface of the polishing pad.
• Some carrier heads include base and a membrane connected to the base that provides a pressurizable chamber.
• a substrate can be mounted on a lower surface of the membrane, and the pressure in the chamber above the membrane controls the load on the substrate during polishing.
• the carrier head typically includes a retaining ring to prevent the substrate from slipping out from below the carrier head during polishing. Due to the friction of the polishing pad on the bottom surface of the retaining ring, the retaining ring gradually wears away and needs to be replaced. Some retaining rings have included physical markings to show when the retaining ring should be replaced.
• a sensor can be used to determine the thickness of the wearable portion of the retaining ring.
• the distance between the base of the carrier head and the polishing pad changes.
• the distribution of pressure near the edge of the substrate can also change. Without being limited to any particular theory, this may be because the change in distance affects the distribution of force through the membrane.
• the thickness of the retaining ring as measured by the sensor can be used as an input to control a polishing parameter to compensate for the changes in polishing rate near the substrate edge.
• a chemical mechanical polishing apparatus includes a carrier head including a retaining ring having a plastic portion with a bottom surface to contact a polishing pad, an in-situ monitoring system including a sensor that generates a signal that depends on a thickness of the plastic portion, and a controller configured to receive the signal from the in-situ monitoring system and to adjust at least one polishing parameter in response to the signal to compensate for non-uniformity caused by changes in the thickness of the plastic portion of the retaining ring.
• the carrier head may include a plurality of chambers, and the at least one polishing parameter may include a pressure in at least one of the plurality of chambers.
• the at least one of the plurality of chambers may be a chamber that controls a pressure on an edge of a substrate held in the carrier head.
• the controller may be configured to decrease the pressure in the at least one of the plurality of chambers if the signal increases.
• the retaining ring may include a metal portion secured to a top surface of the plastic portion.
• the in-situ monitoring system comprises an eddy current monitoring system.
• a rotatable platen may support the polishing pad, and the sensor may be located in and rotate with the platen.
• the monitoring system may generate a sequence of measurements with each sweep, and the controller may be configured to identify one or more measurements made at one or more locations below the retaining ring.
• the controller may be configured to average measurements made at locations below the retaining ring.
• the controller may be configured to select a maximum or minimum measurement from a plurality of measurements made at locations below the retaining ring.
• a chemical mechanical polishing apparatus in another aspect, includes a carrier head including a retaining ring having a plastic portion with a bottom surface to contact a polishing pad, an in-situ monitoring system including a sensor that generates a signal that depends on a thickness of the plastic portion, and a controller configured to receive the signal from the in-situ monitoring system and to determine a thickness of the plastic portion from the signal.
• a method of controlling a polishing operation includes sensing a thickness of a plastic portion of a retaining ring in a carrier head used to hold a substrate against a polishing pad, and adjusting at least one polishing parameter in response to the sensed thickness to compensate for non-uniformity caused by changes in the thickness of the plastic portion of the retaining ring.
• a non-transitory computer program product tangibly embodied in a machine readable storage device, includes instructions to cause a polishing machine to carry out the method.
• Implementations may optionally include one or more of the following advantages.
• the thickness of a wearable portion of a retaining ring can be sensed, e.g., without visual inspection of the retaining ring.
• the thickness of the retaining ring as measured by the sensor can be used as an input to control a polishing parameter to compensate for the changes in polishing rate near the substrate edge.
• Within-wafer and wafer-to-wafer thickness non-uniformity (WIW U and WTW U) can be improved.
• the retaining ring can provide acceptable uniformity at lower thicknesses. Consequently the lifetime of the retaining ring can be increased, thereby reducing operating costs.
• FIG. 1 illustrates a schematic cross-sectional view of an example of a polishing apparatus.
• FIG. 2 illustrates a schematic top view of a substrate having multiple zones.
• FIG. 3 illustrates a top view of a polishing pad and shows locations where in- situ measurements are taken on a substrate.
• FIG. 4 illustrates a signal from the in-situ monitoring system as the sensor scans across the substrate.
• FIG. 5 illustrates a change in the signal due to wear of the retaining ring.
• FIG. 1 illustrates an example of a polishing apparatus 100.
• the polishing apparatus 100 includes a rotatable disk-shaped platen 120 on which a polishing pad 1 10 is situated.
• the platen is operable to rotate about an axis 125.
• a motor 121 can turn a drive shaft 124 to rotate the platen 120.
• the polishing pad 1 10 can be a two-layer polishing pad with an outer polishing layer 1 12 and a softer backing layer 114.
• the polishing apparatus 100 can include a port 130 to dispense polishing liquid 132, such as a slurry, onto the polishing pad 1 10 to the pad.
• the polishing apparatus can also include a polishing pad conditioner to abrade the polishing pad 1 10 to maintain the polishing pad 1 10 in a consistent abrasive state.
• the polishing apparatus 100 includes one or more carrier heads 140.
• Each carrier head 140 is operable to hold a substrate 10 against the polishing pad 110.
• Each carrier head 140 can have independent control of the polishing parameters, for example pressure, associated with each respective substrate.
• each carrier head 140 can include a flexible membrane 144 and a retaining ring 160 to retain the substrate 10 below the flexible membrane 144.
• Each carrier head 140 also includes a plurality of independently controllable pressurizable chambers defined by the membrane, e.g., three chambers 146a-146c, which can apply independently controllable pressurizes to associated zones 148a-148c on the flexible membrane 144 and thus on the substrate 10 (see FIG. 3).
• the center zone 148a can be substantially circular, and the remaining zones 148b-148e can be concentric annular zones around the center zone 148a.
• the retaining ring 160 includes a lower portion 162 and an upper portion 164.
• the lower portion 162 is a wearable plastic material, e.g., polyphenylene sulfide (PPS) or polyetheretherketone (PEEK), whereas the upper portion 164 is a metal, e.g., aluminum or stainless steel.
• the upper portion 164 is more rigid than the lower portion 162.
• a plurality of slurry-transport channels can be formed in the lower surface of the lower portion 162 to direct the polishing fluid inwardly to the substrate 10 being polished.
• the lower portion can have a thickness of about 0.1 to 1 inch, e.g., 100 to 150 mils. In operation, the lower portion 162 is pressed against the polishing pad 110, so the lower portion 162 tends to wear away.
• Each carrier head 140 is suspended from a support structure 150, e.g., a carousel or track, and is connected by a drive shaft 152 to a carrier head rotation motor 154 so that the carrier head can rotate about an axis 155.
• each carrier head 140 can oscillate laterally, e.g., by motion of a carriage on the carousel or track 150; or by rotational oscillation of the carousel itself.
• the platen is rotated about its central axis 125, and each carrier head is rotated about its central axis 155 and translated laterally across the top surface of the polishing pad.
• the number of carrier head assemblies adapted to hold substrates for a simultaneous polishing process can be based, at least in part, on the surface area of the polishing pad 110.
• the polishing apparatus also includes a monitoring system 170 configured to generate a signal that depends on a thickness of the lower portion 162 of the retaining ring 160.
• the monitoring system 170 is an eddy current monitoring system.
• the eddy current monitoring system can also be used to monitor the thickness of a conductive layer being polished on the substrate 10.
• FIG. 1 illustrates an eddy current monitoring system, other types of sensors could be used, e.g., acoustic, capacitive or optical sensors, that are capable of generating a signal that depends on the thickness of the lower portion 162.
• a sensor of the monitoring system 170 can be positioned in a recess 128 in the platen 120.
• the sensor can include a core 172 and drive and sense coils 174 wound around the core 172.
• the core 172 is a high magnetic permeability material, e.g., a ferrite.
• the drive and sense coils 174 are electrically connected to driving and sensing circuitry 176.
• the driving and sensing circuitry 176 can include an oscillator to drive the coil 174. Further details regarding an eddy current system and driving and sensing circuitry can be found in U.S. Patent 7, 1 12,960, U.S. Patent No. 6,924,641, and U.S. Patent Publication No. 2011-0189925, each of which is incorporated by reference.
• FIG. 1 illustrates a single coil 174
• the eddy current monitoring system could use separate coils for driving and sensing the eddy currents.
• FIG. 1 illustrates a U-shaped core 172
• other core shapes are possible, e.g., a single shaft, or three or more prongs extending from a backing piece.
• a portion of the core 172 can extend upwardly above the top surface of the platen 120 and into a recess 1 18 in the bottom of the polishing pad 1 10.
• the recess 1 18 can be located in a transparent window in the polishing pad, a portion of the optical monitoring system can be located in the recess 128 in the platen, and the optical monitoring system can direct light through the window.
• the output of the circuitry 176 can be a digital electronic signal that passes through a rotary coupler 129, e.g., a slip ring, in the drive shaft 124 to a controller 190.
• the circuitry 176 could communicate with the controller 190 by a wireless signal.
• the controller 190 can include a central processing unit (CPU) 192, a memory 194, and support circuitry 196, e.g., input/output circuitry, power supplies, clock circuits, cache, and the like.
• the memory is connected to the CPU 192.
• the memory is a non-transitory computable readable medium, and can be one or more readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or other form of digital storage.
• RAM random access memory
• ROM read only memory
• floppy disk hard disk, or other form of digital storage.
• the controller 190 could be a distributed system, e.g., including multiple independently operating processors and memories.
• the senor of the in-situ monitoring system 160 is installed in and rotates with the platen 120. In this case, the motion of the platen 120 will cause the sensor to scan across each substrate.
• the controller 190 can sample the signal from the sensor, e.g., at a sampling frequency. The signal from the sensor can be integrated over a sampling period to generate measurements at the sampling frequency.
• each of points 201a-201k represents a location of a measurement by the monitoring system (the number of points is illustrative; more or fewer measurements can be taken than illustrated, depending on the sampling frequency).
• measurements are obtained from different radii on the substrate 10 and the retaining ring 160. That is, some measurements are obtained from locations closer to the center of the substrate 10, some measurements are obtained from locations closer to the edge of the substrate 10, and some measurements are obtained from locations over under the retaining ring.
• FIG. 4 illustrates a signal 220 from an eddy current sensor during scan across a substrate.
• the sensor In portions 222 of the signal 220, the sensor is not proximate to the wafer (the sensor is "off-wafer"). Because there is no conductive material nearby, the signal starts at a relatively low value SI.
• portions 224 of the signal 220 the sensor is proximate to the retaining ring. Because the retaining ring 160 includes a conductive upper portion 164, the amplitude of the signal 220 (relative to the off- wafer portion 222) increases to a relatively higher value S2.
• the sensor In the portions 226 of the signal, the sensor is proximate to the wafer (the sensor is "on-wafer").
• the signal will have an amplitude S3 that depends on the presence and thickness of a metal layer on the substrate.
• the substrate includes a relatively thick conductive layer, so that S3 is greater than S2.
• S3 might be higher or lower than the S2 depending on the presence and thickness of the metal layer.
• the controller 190 can be configured to determine which measurements are taken at locations below the retaining ring and to store the measurements.
• Which portion of the continuous signal from the sensor corresponds to the substrate, the retaining ring and the off-wafer zone can be determined based on the platen angular position and carrier head location, e.g., as measured by a position sensor and/or motor encoder. For example, for any given scan of the sensor of the sensor across the substrate, based on timing, motor encoder information, and/or optical detection of the edge of the substrate and/or retaining ring, the controller 190 can calculate the radial position (relative to the center of the substrate being scanned) for each measurement from the scan.
• the polishing system can also include a rotary position sensor, e.g., a flange attached to an edge of the platen that will pass through a stationary optical interrupter, to provide additional data for determination of the position of the measurements.
• a rotary position sensor e.g., a flange attached to an edge of the platen that will pass through a stationary optical interrupter
• the time of measurement of the spectrum can be used as a substitute for the exact calculation of the radial position. Determination of the radial position of a measurement is discussed in U.S. Patent No. 6, 159,073 and U.S. Patent No. 7,097,537, each of which is incorporated by reference.
• the controller 190 can associate measurements that fall within a
• predetermined radial zone which is known from the physical dimensions of the retaining ring 160, with the retaining ring.
• the portion of the signal corresponding to the retaining ring is determined based on the signal itself.
• the controller 190 can be configured with a signal processing algorithm to detect a sudden change in signal strength. This sudden change can be used as indicating the shift to a different portion of the signal.
• Other techniques for detecting a different portion of the signal include changes in slope and threshold values in amplitude.
• the measurements can be combined, e.g., averaged.
• a measurement from the multiple measurements can be selected, e.g., the highest or lowest measurement out of the multiple measurements can be used.
• measurements made over multiple sweeps can be combined, e.g., averaged, or a measurement from the multiple sweeps can be selected, e.g., the highest or lowest measurement out of the measurements from multiple sweeps can be used.
• measurements made over multiple substrates can be combined, e.g., averaged, or a measurement from the multiple substrates can be selected, e.g., the highest or lowest measurement out of the measurements from multiple substrates can be used.
• the retaining ring is monitored in less than all of the substrates being polished. For example, a
• measurement of the thickness of the lower portion of the retaining ring can be generated once every five substrates polished.
• the controller associates the various measurements that are interior to the predetermined radial zone with the controllable zones 148b-148e (see FIG. 2) on the substrate 10.
• the lower portion 162 of the retaining ring is worn away. Because the retaining ring 160 is pressed into contact with the polishing pad 110, as the retaining ring wears the metal upper portion 164 will gradually move closer to the platen 120. Consequently the strength of the signal as measured below the substrate will change, e.g., increase. For example, as shown in FIG.
• a portion 224 of the signal 220 where the sensor is proximate to a new retaining ring can have a signal intensity S2
• the portion of the signal where the sensor is proximate to a worn retaining ring can have a different, e.g., higher signal intensity S2'.
• the controller 190 can be configured to adjust one or more polishing parameters in order to compensate for effect of retaining ring wear on the polishing rate at the substrate edge.
• the signal intensity S2, S2' corresponding to the retaining ring can be used by the controller 190 as an input to a function that sets the polishing parameters.
• the controller 190 can be configured to adjust the pressure applied to the outermost region 148c, e.g., the pressure applied by the outermost chamber 146c. For example, if wear of the retaining ring results in an increase in the polishing rate at the substrate, the controller can reduce the pressure applied to the outermost region 148c of the substrate 10. In this case, the function that sets the pressure to the outermost region 148c takes the signal intensity S2 as an input, and the function is selected such that it outputs a desired pressure that decreases if S2 increases. Conversely, if wear of the retaining ring results in a decrease in the polishing rate at the substrate edge, the controller can increase the pressure applied to the outermost region 149c of the substrate 10. In this case, the function that sets the pressure to the outermost region 148c takes the signal intensity S2 as an input, and the function is selected such that it outputs a desired pressure that increases if S2 increases.
• the signal intensity can actually decrease as the retaining ring wears.
• the functions can be adjusted appropriately, e.g., if wear of the retaining ring results in an increase in the polishing rate at the substrate, then the function that sets the pressure is selected such that it outputs a desired pressure that decreases if S2 decreases.
• Whether wear of the retaining ring increases or decreases the polishing rate at the substrate edge, and the amount of the decrease relative to the signal intensity S2, can be determined by empirical measurement. For example, a set of test substrates can be polished without performing compensation but using retaining rings 160 with different thicknesses for the lower portion 162. The signal intensities S2 for the different thicknesses of the lower portion 162 can be monitored, the center versus edge thickness difference for the layer being polished can be measured, e.g., at an inline or separate metrology station. Presuming a Prestonian model in which the polishing rate is proportional to the pressure, the collected data can provide a function, e.g., a look-up table, that generates a correction for the pressure based on the signal intensity.
• a function e.g., a look-up table
• the term substrate can include, for example, a product substrate (e.g., which includes multiple memory or processor dies), a test substrate, a bare substrate, and a gating substrate.
• the substrate can be at various stages of integrated circuit fabrication, e.g., the substrate can be a bare wafer, or it can include one or more deposited and/or patterned layers.
• the term substrate can include circular disks and rectangular sheets.
• polishing apparatus and methods can be applied in a variety of polishing systems.
• Either the polishing pad, or the carrier heads, or both can move to provide relative motion between the polishing surface and the substrate.
• the platen may orbit rather than rotate.
• the polishing pad can be a circular (or some other shape) pad secured to the platen.
• Some aspects of the endpoint detection system may be applicable to linear polishing systems, e.g., where the polishing pad is a continuous or a reel-to-reel belt that moves linearly.
• the polishing layer can be a standard (for example, polyurethane with or without fillers) polishing material, a soft material, or a fixed-abrasive material. Terms of relative positioning are used; it should be understood that the polishing surface and substrate can be held in a vertical orientation or some other orientation.

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• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

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• 2013
  • 2013-03-08 US US13/791,761 patent/US9067295B2/en active Active
  • 2013-07-03 CN CN201380037623.XA patent/CN104471685B/zh active Active
  • 2013-07-03 JP JP2015524297A patent/JP2015526303A/ja active Pending
  • 2013-07-03 KR KR1020157001586A patent/KR101965475B1/ko active Active
  • 2013-07-03 WO PCT/US2013/049269 patent/WO2014018238A1/en not_active Ceased
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