WO2014015603A1 - Capteur et son procédé de fabrication - Google Patents

Capteur et son procédé de fabrication Download PDF

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Publication number
WO2014015603A1
WO2014015603A1 PCT/CN2012/085689 CN2012085689W WO2014015603A1 WO 2014015603 A1 WO2014015603 A1 WO 2014015603A1 CN 2012085689 W CN2012085689 W CN 2012085689W WO 2014015603 A1 WO2014015603 A1 WO 2014015603A1
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WO
WIPO (PCT)
Prior art keywords
pattern
electrode
layer
photodiode
bias
Prior art date
Application number
PCT/CN2012/085689
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English (en)
Chinese (zh)
Inventor
徐少颖
谢振宇
陈旭
Original Assignee
北京京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京京东方光电科技有限公司 filed Critical 北京京东方光电科技有限公司
Publication of WO2014015603A1 publication Critical patent/WO2014015603A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • Embodiments of the present invention relate to a sensor and a method of fabricating the same. Background technique
  • CT computed tomography
  • the sensor 12 includes a plurality of scan lines 15, a plurality of data lines 16, and a plurality of sensing units, each of which includes a photodiode 13 and a field effect transistor ( Field Effect Transistor (FET) 14, the gate of the field effect transistor 14 is connected to a corresponding scan line 15 in the sensor 12, the drain of the field effect transistor 14 and the corresponding data line in the sensor 12 (Data Line) 16
  • FET Field Effect Transistor
  • the photodiode 13 is connected to the source of the field effect transistor 14.
  • One end of these data lines 16 is connected to the data readout circuit 18 via a connection pin 17.
  • the above sensor operates on the principle that the sensor 12 applies a drive scan signal through the scan line 15 to control the switching state of the field effect transistor 14 of each sense unit.
  • the photocurrent signal generated by the photodiode 13 is sequentially output through the data line 16 connected to the field effect transistor 14 and the data readout circuit 18, by controlling the timing of the signal on the scan line 15 and the data line 16.
  • the collecting function of the photocurrent signal is realized, that is, the control effect of the photocurrent signal generation generated by the photodiode 13 is realized by controlling the switching state of the FET 14.
  • the senor usually adopts a thin film transistor (TFT) flat plate structure, and the sensor may have multiple layers in a cross section.
  • each sensing unit includes: a substrate, a gate layer, a gate insulating layer, Active layer, source and drain layers, passivation layer, PIN junction and transparent electrode window layer of PIN photosensor, and bias line layer and light barrier layer.
  • TFT thin film transistor
  • each sensing unit includes: a substrate, a gate layer, a gate insulating layer, Active layer, source and drain layers, passivation layer, PIN junction and transparent electrode window layer of PIN photosensor, and bias line layer and light barrier layer.
  • the specific layers on the cross-section are not exactly the same due to the difference in specific structures.
  • Each layer of the sensor is typically formed by a patterning process, and each patterning process typically includes steps such as masking, exposure, development, etching, and stripping. That is, in order to achieve multiple sensors Layers require multiple patterning processes.
  • the above-mentioned sensor having a plurality of layers usually requires 9 to 11 patterning processes at the time of manufacture, so that 9 to 11 mask masks are required correspondingly, thereby making the manufacturing cost of the sensor high, and the manufacturing process is relatively high. Complex, and the production capacity is difficult to upgrade. Summary of the invention
  • a sensor comprising: a substrate substrate, a set of gate lines and a set of data lines arranged in a cross, an array defined by the set of gate lines and a set of data lines a plurality of sensing units arranged in a row, and a set of bias lines extending through each of the sensing units, each sensing unit comprising at least one sensing subunit composed of a thin film transistor device and a photodiode sensing device, wherein
  • the thin film transistor device includes: a gate electrode over the substrate substrate and connected to an adjacent gate line; a gate insulating layer over the gate and covering the substrate substrate; An active layer above the gate insulating layer, above the gate; an ohmic layer over the active layer; a source and a drain over the ohmic layer and oppositely forming a channel, The drain is connected to an adjacent data line;
  • the photodiode sensor device includes: a receiving electrode connected to the source, a photodiode over the receiving electrode, a transparent electrode over the photodiode, and a bias on the transparent electrode a pressure electrode, the bias electrode being connected to an adjacent bias line.
  • a method of manufacturing a sensor comprising: forming a pattern of a gate line, a pattern of a gate connected to the gate line by a patterning process on a substrate;
  • a gate insulating layer covering the base substrate, and forming a pattern of an active layer above the gate, a pattern of an ohmic layer over the active layer, located at a location by a first patterning process a pattern of a source and a drain formed above the ohmic layer and oppositely formed, a pattern of a data line connected to the drain, a pattern of a receiving electrode connected to the source, and a receiving electrode a pattern of the photodiode above, a pattern of transparent electrodes on the photodiode; a pattern of the first passivation layer formed by the second patterning process, the first passivation layer not covering the bias electrode And the zone i of the bias line; and Forming a pattern of a bias electrode over the transparent electrode, a pattern of a bias line connected to the bias electrode, and a location over the source, drain, and channel by a third patterning process The pattern of the light barrier.
  • the thin film transistor device of the sensor according to the embodiment of the invention is of a bottom gate type, and the manufacturing of the sensor can be formed by using a lesser number of patterning processes. Compared with the prior art, the number of masks used is reduced, and the number of masks is reduced. Manufacturing costs simplify the production process and greatly increase the equipment capacity and product yield.
  • FIG. 1 is a schematic perspective view of a conventional sensor
  • FIG. 2 is a top plan view of one of the sensing units of the sensor according to the embodiment of the present invention.
  • FIG. 3 is a top plan view of a plurality of sensing units arranged in an array of sensors according to an embodiment of the present invention
  • FIG. 4 is a cross-sectional view of the sensing unit along the line A-A of FIG. 2 after the first patterning process according to an embodiment of the present invention
  • FIG. 5 is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the first patterning process according to an embodiment of the present invention
  • FIG. 6 is a cross-sectional view of the sensing unit along the line A-A of FIG. 2 after the second patterning process according to an embodiment of the present invention
  • FIG. 7 is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the second patterning process according to an embodiment of the present invention
  • FIG. 8 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along line A-A of FIG. 2 after the third patterning process;
  • FIG. 9 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line B-B of FIG. 2 after the third patterning process;
  • 10 is a cross-sectional view of the sensing unit along line AA of FIG. 2 after the fourth patterning process according to an embodiment of the present invention
  • 11 is a cross-sectional view of the sensing unit along line BB of FIG. 2 after the fourth patterning process according to an embodiment of the present invention
  • FIG. 12 is a cross-sectional view of the sensing unit taken along line A-A of FIG. 2 after the fifth patterning process according to an embodiment of the present invention
  • Figure 13 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line B-B of Figure 2 after the fifth patterning process.
  • the senor may be an X-ray sensor or other type of sensor, such as a sensor that transmits by photoelectric conversion.
  • a sensor that transmits by photoelectric conversion may be formed identically.
  • the embodiment of the present invention provides a sensor and a manufacturing method thereof.
  • the sensor includes: a substrate substrate 32, a set of gate lines 30 and a set of data lines 31 arranged in a cross, a set of gate lines 30 and a set of data a plurality of sensing units arranged in an array defined by line 31, and a set of bias lines 42b extending through each of the sensing units, each sensing unit comprising at least one of a thin film transistor device and a photodiode sensor device Sensing subunit, wherein
  • the thin film transistor device includes: a gate electrode 38 over the substrate substrate 32 and connected to the adjacent gate line 30; a gate insulating layer 37 over the gate electrode 38 and covering the substrate; and the gate insulating layer 37 Above, an active layer 36 over the gate 38; an ohmic layer 35 over the active layer 36; a source 33 and a drain 34 overlying the ohmic layer 35 and oppositely forming a channel, the drain The pole 34 is connected to the adjacent data line 31;
  • the photodiode sensor device includes: a receiving electrode 39 connected to the source 33, a photodiode 40 above the receiving electrode 39, a transparent electrode 41 above the photodiode 40, and a bias voltage over the transparent electrode 41.
  • the electrode 42a, the bias electrode 42a is connected to an adjacent bias line 42b.
  • the base substrate 32 may be a substrate of a glass substrate, a plastic substrate or other materials; the gate line 30, the gate 38, the data line 31, the source 33, the drain 34, and the receiving electrode. 39.
  • the bias electrode 42a, the bias line 42b and the light blocking strip 52 (the function of which is to reduce the influence of light on the channel) can be made of the same material, such as aluminum-niobium alloy (AlNd), aluminum (A1).
  • a single layer film of copper (Cu), molybdenum (Mo), molybdenum-tungsten alloy (MoW) or chromium (Cr) may be a composite film composed of any combination of these metal elements or alloy materials.
  • the thickness of these single or composite films is, for example, between 150 nm and 450 nm.
  • the material of the ohmic layer 35 may be a doped semiconductor (n+a-Si); the material of the active layer 36 may be a semiconductor material, such as amorphous silicon (a-Si), and the thickness is, for example,
  • the material of the gate insulating layer 37 may be silicon nitride, and the thickness is, for example, between 300 nm and 500 nm; the material of the transparent electrode 41 may be, for example, indium tin oxide (ITO) or indium oxide. Transparent conductive material such as (IZO).
  • the photodiode may be a PIN type photodiode, including: an N-type semiconductor (n+a-Si) 40a located above the receiving electrode 39, and an I-type semiconductor located above the N-type semiconductor 40a ( a-Si) 40b, and a P-type semiconductor (p+a-Si) 40c over the I-type semiconductor 40b.
  • the PIN type photodiode works by the photovoltaic principle and has the advantages of small junction capacitance, short transit time, and high sensitivity.
  • photodiodes may also utilize other types of photodiodes such as MIS type photodiodes.
  • the senor may further include: under each of the data lines 31 and the receiving electrodes 39 of each of the photodiode sensing devices, sequentially located in the gate insulating layer An active material layer 55 and an ohmic material layer 56 above 37;
  • the senor may further include:
  • first passivation layer 43 over the transparent electrode material layer 54 and the transparent electrode 41.
  • the first passivation layer 43 does not cover the bias electrode 42a and the bias line 42b;
  • a light blocking strip located above the first passivation layer 43 and located above the source 33, the drain 34 and the channel
  • FIG. 12 and FIG. 13 are cross-sectional structures of one sensing unit, and thus are located on the substrate The surrounding signal guiding area vias are not shown in the figure).
  • the materials of the data line 31, the source 33, the drain 34, and the receiving electrode 39 are preferably the same.
  • the materials of the light blocking strip 52, the bias electrode 42a, and the bias line 42b are preferably the same.
  • the photodiode material layer 53, the transparent electrode material layer 54, the active material layer 55, and the ohmic material layer 56 are respectively connected to the photodiode 40, the transparent electrode 41, the active layer 36, and the ohmic layer 35.
  • the materials are the same.
  • the purpose of this structural design is to reduce the number of patterning processes, and the photodiode material layer 53, the transparent electrode material layer 54, the active material layer 55, and the ohmic material layer 56 do not play a practical role in the sensor.
  • the first passivation layer 43 (and the second passivation layer 57 hereinafter) may be an inorganic insulating film (for example, silicon nitride or the like) or an organic insulating film (for example, a photosensitive resin material or a non-photosensitive resin material, etc.), for example, in thickness Between 150 nm and 1500 nm.
  • an inorganic insulating film for example, silicon nitride or the like
  • an organic insulating film for example, a photosensitive resin material or a non-photosensitive resin material, etc.
  • the set of gate lines 30 includes two single gate lines 30a, and a plurality of sets of double gate lines 30b between the two single gate lines 30a (adjacent two double gate lines 30b constitute A group) .
  • Each of the sensing units includes two sensing subunits, each of which includes a thin film transistor device 50 and a photodiode device 51.
  • the thin film transistor devices 50 of the two sensing subunits are diagonally distributed, and the gate of the thin film transistor device 50 is connected to an adjacent one of the single gate lines 30a or the adjacent double gate lines 30b.
  • both the gate line and the data line are arranged in a single line, and there is only one sensing unit in a region defined by two adjacent gate lines and two adjacent ones, and the sensing unit includes a thin film transistor
  • the device and a photodiode sensor device comprise only one sensing subunit. Therefore, compared with the conventional sensor, the arrangement of the double gate lines in the embodiment of the present invention doubles the total number of gate lines, but the number of data lines is reduced to half, and the cost of the gate line driving equipment is lower than the data. The cost of the line drive device, therefore, the use of this structure can further reduce the cost of the sensor.
  • the bias line 42b is located between two sensing subunits of the sensing unit, and is connected to the bias electrodes 42a of the two sensing subunits.
  • Cross-shaped which improves the uniformity of the voltage between the bias electrode and the transparent electrode compared to the conventional "in-line” bias line.
  • the thin film transistor device of the sensor is a bottom gate type, and the manufacturing of the sensor can be formed by using a five-time patterning process. Compared with the prior art, the number of masks used in the manufacturing process can be reduced, and the number of masks is reduced. Manufacturing costs simplify the production process and greatly increase the equipment capacity and product yield.
  • a method of manufacturing the above sensor comprising:
  • Step 101 A pattern of the gate line 30 and a pattern of the gate electrode 38 connected to the gate line 30 are formed on the base substrate 32 by one patterning process.
  • Figure 4 and Figure 5 for the cross-sectional structure after the first patterning process.
  • 3 and 4 are cross-sectional views of the base substrate after the first patterning process.
  • 2 and 12 and FIG. 12 are a plan view and a cross-sectional view, respectively, of the sensing unit obtained after five passes of the process. Therefore, the base substrate in FIGS. 3 and 4 is only cut along the direction of AA, line and BB shown in FIG. 2, which does not represent a cross-sectional view of the base substrate of FIG. 2.
  • FIGS. 5 to 11 are also shown in the same manner.
  • the one-time patterning process includes steps of substrate cleaning, film formation, photoresist coating, exposure, development, etching, photoresist removal, and the like.
  • Substrate cleaning includes cleaning with deionized water, organic cleaning solution, and the like.
  • the film forming process is used to form a structural layer to be patterned. For example, for a metal layer, a film is formed by physical vapor deposition (for example, magnetron sputtering), and a pattern is formed by wet etching.
  • a non-metal layer a film is formed by chemical vapor deposition, and dried. Etching forms a pattern.
  • the composition process in the following steps is the same as this, and will not be described again.
  • Step 102 forming a gate insulating layer 37 covering the substrate, and forming a pattern of the active layer 36 over the gate electrode 38, a pattern of the ohmic layer 35 over the active layer 36, in the ohmic layer 35 by one patterning process.
  • the pattern of the source 33 and the drain 34 forming the channel, the pattern of the data line 31 connected to the drain 34, the pattern of the receiving electrode 39 connected to the source 33, and the receiving electrode 39 are formed on the upper side.
  • the pattern of the photodiode 40, the pattern of the transparent electrode 41 above the photodiode 40 Please refer to Figure 6 and Figure 7 for the cross-sectional structure after the second patterning process;
  • the active layer is formed by one patterning process.
  • the pattern of 36, the pattern of the ohmic layer 35, the pattern of the source 33 and the drain 34, the pattern of the data line 31, the pattern of the receiving electrode 39, the pattern of the photodiode 40, and the pattern of the transparent electrode 41 include:
  • an active semiconductor layer depositing an active semiconductor layer, an ohmic semiconductor layer, a data line material layer, an N-type semiconductor layer, an I-type semiconductor layer, a P-type semiconductor layer, and a transparent conductive material layer;
  • the substrate Exposing the substrate with a mask having a fully transparent region, a semi-transmissive region, and an opaque region, wherein the opaque region correspondingly forms the receiving electrode 39, the PIN photodiode, the transparent electrode 41, the data line 31, and the drain a region of the pole 34 and the source 33, the semi-transmissive region corresponding to the region forming the channel;
  • the mask used in this step may be a gray tone mask or a halftone mask;
  • the substrate is etched and photoresist stripped to form a pattern of the ohmic layer 35 and a pattern of the drain 34 and the source 33, and the source 33 and the drain 34 are opposed to each other to form a channel.
  • the pattern of the transparent electrode 41 may be formed by wet etching alone or by dry etching simultaneously with the pattern of the photodiode 40.
  • Step 103 forming a pattern of the first passivation layer 43 by one patterning process, the first passivation layer 43 not covering the region where the bias electrode 42a and the bias line 42b are formed, that is, the formation of 42a and 42b is reserved. Space. This is because the bias electrode 42a and the bias line 42b formed next need to be connected to the transparent electrode 41.
  • Step 104 forming a pattern of the bias electrode 42a over the transparent electrode 41 by one patterning process, and connecting with the bias electrode 42a The pattern of the bias line 42b, and the pattern of the light blocking strips 52 above the source 33, the drain 34 and the channel.
  • the light blocking strip 52, the bias electrode 42a, and the bias line 42b are made of the same material.
  • step 104 the method further includes:
  • Step 105 forming a pattern of the second passivation layer 57 covering the substrate by one patterning process, the second passivation layer 57 has a signal guiding area via hole, and the cross-sectional structure after the fifth patterning process is shown in FIG. 13 and 14 is shown.
  • step 105 is optional because the purpose of the present invention can be achieved without performing step 105.
  • the method for fabricating a sensor may include only steps 101-104 described above.
  • the manufacturing method of the sensor of the present invention can be fabricated by using four or five patterning processes in total, which reduces the use of the mask, reduces the manufacturing cost, simplifies the production process, and greatly improves the equipment production rate compared with the prior art. And the yield of the product.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un capteur et un procédé de fabrication dudit capteur. Ce capteur comprend : une pluralité d'unités de détection agencées en réseau et définies par un groupe de lignes de grille et un groupe de lignes de données ; et un groupe de lignes de polarisation passant à travers chaque unité de détection. Chaque unité de détection comprend au moins une sous-unité de détection constituée d'un élément transistor à couches minces et d'un élément de détection à photodiode. Le capteur est fabriqué par la mise en œuvre de cinq processus de formation de motifs. Des motifs d'une couche active, d'une couche ohmique, d'une source, d'un drain, des lignes de données, d'une électrode de réception, d'une photodiode et d'une électrode transparente sont formés par un processus de formation de motifs.
PCT/CN2012/085689 2012-07-26 2012-11-30 Capteur et son procédé de fabrication WO2014015603A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210262535.7A CN102790060B (zh) 2012-07-26 2012-07-26 一种传感器及其制造方法
CN201210262535.7 2012-07-26

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WO2014015603A1 true WO2014015603A1 (fr) 2014-01-30

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102790060B (zh) * 2012-07-26 2014-06-04 北京京东方光电科技有限公司 一种传感器及其制造方法
CN103560135B (zh) * 2013-11-14 2015-12-02 北京京东方光电科技有限公司 一种x射线传感器的阵列基板及其制造方法
CN115188855A (zh) * 2020-02-26 2022-10-14 光丰科技(浙江)有限公司 光电探测器、集成光电探测器及其制作方法
CN111753742A (zh) * 2020-06-28 2020-10-09 上海天马微电子有限公司 光电感应基板、平板探测器、指纹识别装置及显示装置

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US20070114625A1 (en) * 2005-11-21 2007-05-24 Chian-Chih Hsiao Image TFT array of a direct X-ray image sensor and method of fabricating the same
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US20070114625A1 (en) * 2005-11-21 2007-05-24 Chian-Chih Hsiao Image TFT array of a direct X-ray image sensor and method of fabricating the same
CN101567378A (zh) * 2008-04-23 2009-10-28 爱普生映像元器件有限公司 固体拍摄装置及其制造方法
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