WO2014015601A1 - Capteur et son procédé de fabrication - Google Patents

Capteur et son procédé de fabrication Download PDF

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Publication number
WO2014015601A1
WO2014015601A1 PCT/CN2012/085661 CN2012085661W WO2014015601A1 WO 2014015601 A1 WO2014015601 A1 WO 2014015601A1 CN 2012085661 W CN2012085661 W CN 2012085661W WO 2014015601 A1 WO2014015601 A1 WO 2014015601A1
Authority
WO
WIPO (PCT)
Prior art keywords
pattern
electrode
photodiode
type semiconductor
gate
Prior art date
Application number
PCT/CN2012/085661
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English (en)
Chinese (zh)
Inventor
徐少颖
谢振宇
陈旭
Original Assignee
北京京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京京东方光电科技有限公司 filed Critical 北京京东方光电科技有限公司
Publication of WO2014015601A1 publication Critical patent/WO2014015601A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Definitions

  • Embodiments of the present invention relate to a sensor and a method of fabricating the same. Background technique
  • CT computed tomography
  • the sensor 12 includes a plurality of scan lines 15, a plurality of data lines 16, and a plurality of sensing units, each of which includes a photodiode 13 and a field effect transistor ( Field Effect Transistor (FET) 14, the gate of the field effect transistor 14 is connected to a corresponding scan line 15 in the sensor 12, the drain of the field effect transistor 14 and the corresponding data line in the sensor 12 (Data Line) 16
  • FET Field Effect Transistor
  • the photodiode 13 is connected to the source of the field effect transistor 14.
  • One end of these data lines 16 is connected to the data readout circuit 18 via a connection pin 17.
  • the above sensor operates on the principle that the sensor 12 applies a drive scan signal through the scan line 15 to control the switching state of the field effect transistor 14 of each sense unit.
  • the photocurrent signal generated by the photodiode 13 is sequentially output through the data line 16 connected to the field effect transistor 14 and the data readout circuit 18, by controlling the timing of the signal on the scan line 15 and the data line 16.
  • the collecting function of the photocurrent signal is realized, that is, the control effect of the photocurrent signal generation generated by the photodiode 13 is realized by controlling the switching state of the FET 14.
  • the senor usually adopts a thin film transistor (TFT) flat plate structure, and the sensor may have multiple layers in a cross section.
  • each sensing unit includes: a substrate, a gate layer, a gate insulating layer, Active layer, source and drain layers, passivation layer, PIN junction and transparent electrode window layer of PIN photosensor, and bias line layer and light barrier layer.
  • TFT thin film transistor
  • each sensing unit includes: a substrate, a gate layer, a gate insulating layer, Active layer, source and drain layers, passivation layer, PIN junction and transparent electrode window layer of PIN photosensor, and bias line layer and light barrier layer.
  • the specific layers on the cross-section are not exactly the same due to the difference in specific structures.
  • Each layer of the sensor is typically formed by a patterning process, and each patterning process typically includes steps such as masking, exposure, development, etching, and stripping. That is, in order to achieve multiple sensors Layers require multiple patterning processes.
  • the above-mentioned sensor having a plurality of layers usually requires 9 to 11 patterning processes at the time of manufacture, so that 9 to 11 mask masks are required correspondingly, thereby making the manufacturing cost of the sensor high, and the manufacturing process is relatively high. Complex, and the production capacity is difficult to upgrade. Summary of the invention
  • a sensor comprising: a substrate, a set of gate lines and a set of data lines arranged in a cross, and an array defined by the set of gate lines and a set of data lines a plurality of sensing units arranged, each sensing unit comprising at least one sensing subunit composed of a thin film transistor device and a photodiode sensor device, wherein
  • the thin film transistor device includes: a source and a drain disposed above the substrate and oppositely forming a channel, the drain being connected to an adjacent data line, and being located above the source and the drain An ohmic layer, an active layer over the ohmic layer and covering the channel, a gate insulating layer over the active layer, and an overlying gate line and adjacent gate lines Connected gate
  • the photodiode sensing device includes: a receiving electrode disposed above the substrate and connected to the source, a photodiode over the receiving electrode, a transparent electrode above the photodiode, and the transparent A biasing electrode above the electrode.
  • a method of manufacturing a sensor includes: forming a pattern of a data line, a pattern of a drain connected to the data line, and a drain on a substrate by a first patterning process a pattern of a source forming a channel, a pattern of a receiving electrode connected to the source, and a pattern of an ohmic layer over the source and the drain;
  • a pattern of gate lines over the gate insulating layer, a pattern of gates connected to the gate lines, and a pattern of bias electrodes over the transparent electrodes are formed by a fifth patterning process.
  • the sensor having the structure can be fabricated with a fewer number of patterning processes, and the number of masks used is reduced compared with the prior art, and the number of masks is reduced. The manufacturing cost simplifies the production process and greatly increases the equipment production capacity and product yield.
  • FIG. 1 is a schematic perspective view of a conventional sensor
  • FIG. 2 is a top plan view of one of the sensing units of the sensor according to the embodiment of the present invention.
  • FIG. 3 is a top plan view of a plurality of sensing units arranged in an array of sensors according to an embodiment of the present invention
  • FIG. 4 is a cross-sectional view of the sensing unit along the line A-A of FIG. 2 after the first patterning process according to an embodiment of the present invention
  • FIG. 5 is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the first patterning process according to an embodiment of the present invention
  • FIG. 6 is a cross-sectional view of the sensing unit along the line A-A of FIG. 2 after the second patterning process according to an embodiment of the present invention
  • FIG. 7 is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the second patterning process according to an embodiment of the present invention
  • FIG. 8 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along line A-A of FIG. 2 after the third patterning process;
  • FIG. 9 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line B-B of FIG. 2 after the third patterning process;
  • Figure 10 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along line A-A of Figure 2 after the fourth patterning process;
  • Figure 11 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line B-B of Figure 2 after the fourth patterning process;
  • FIG. 12 is a diagram showing the sensing unit of the embodiment of the present invention along the AA of FIG. 2 after the fifth patterning process. Cross-sectional view of the line;
  • FIG. 13 is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the fifth patterning process according to an embodiment of the present invention
  • FIG. 14 is a cross-sectional view of the sensing unit taken along line A-A of FIG. 2 after the sixth patterning process according to an embodiment of the present invention.
  • Figure 15 is a cross-sectional view of the sensing unit taken along line B-B of Figure 2 after the sixth patterning process in accordance with an embodiment of the present invention.
  • the senor may be an X-ray sensor or other type of sensor, such as a sensor that transmits by photoelectric conversion.
  • a sensor that transmits by photoelectric conversion may be formed identically.
  • the embodiment of the present invention provides a sensor and a manufacturing method thereof.
  • the sensor includes: a substrate 32, a set of gate lines 30 and a set of data lines 31 arranged in a cross, and a set of gate lines 30 and a set of data lines a plurality of sensing units arranged in an array, each of which includes at least one sensing subunit composed of a thin film transistor device and a photodiode sensor device, wherein
  • the thin film transistor device includes a source 33 and a drain 34 which are disposed above the substrate 32 and are oppositely formed with a channel, the drain 34 is connected to the adjacent data line 31, and is located at the source 33 and the drain.
  • the photodiode sensor device includes: a receiving electrode 39 located above the substrate 32 and connected to the source 33, a photodiode 40 above the receiving electrode 39, a transparent electrode 41 above the photodiode 40, and a transparent electrode Bias electrode 42 above 41.
  • the substrate 32 may be a substrate of a glass substrate, a plastic substrate or other materials; the data line 31, the source 33, the drain 34 and the receiving electrode 39 may be made of the same material, for example A single layer film of aluminum-niobium alloy (AlNd), aluminum (A1), copper (Cu), molybdenum (Mo), molybdenum-tungsten alloy (MoW) or chromium (Cr), or any combination of these metal elements or alloy materials A composite film composed.
  • the thickness of these single or composite films is, for example, between 150 nm and 450 nm.
  • the material of the ohmic layer 35 may be a doped semiconductor (n+a-Si), that is, an N-type semiconductor;
  • the material of the active layer 36 may be a semiconductor material, such as amorphous silicon (a- Si), the thickness is, for example, between 30 nm and 250 nm;
  • the material of the gate insulating layer 37 may be silicon nitride, and the thickness is, for example, between 300 nm and 500 nm;
  • the gate line 30, the gate 38, and the bias electrode 42 can The same material is used, preferably a heavy metal or a heavy metal alloy such as a copper-lead alloy;
  • the material of the transparent electrode 41 may be a transparent conductive material such as indium tin oxide (ITO) or indium oxide (IZO).
  • the photodiode may be a PIN type photodiode, comprising: an N-type semiconductor (n+a-Si) 40a located above the receiving electrode 39, and an I-type semiconductor located above the N-type semiconductor 40a. (a-Si) 40b and a P-type semiconductor (p+a-Si) 40c over the I-type semiconductor 40b.
  • the PIN type photodiode works by the photovoltaic principle and has the advantages of small junction capacitance, short transit time, and high sensitivity.
  • photodiodes may also utilize other types of photodiodes such as MIS type photodiodes.
  • the sensor may further include: located on a set of gate lines 30 , and a gate 38 and a bias electrode 42 of each sensing unit and Covering the passivation layer 43 of the substrate, the passivation layer 43 has a signal guiding area via hole (FIG. 14 and FIG. 15 are cross-sectional structures of one sensing unit, so the signal guiding area via hole located at the periphery of the substrate is not shown in the figure Out).
  • the passivation layer 43 may be an inorganic insulating film (e.g., silicon nitride or the like) or an organic insulating film (e.g., a photosensitive resin material or a non-photosensitive resin material, etc.) having a thickness of, for example, 150 nm to 1500 nm.
  • an inorganic insulating film e.g., silicon nitride or the like
  • an organic insulating film e.g., a photosensitive resin material or a non-photosensitive resin material, etc.
  • the set of gate lines 30 includes two single gate lines 30a, and a plurality of sets of double gate lines 30b between the two single gate lines 30a (the adjacent two double gate lines 30b constitute one Group).
  • Each of the sensing units includes two sensing subunits, each of which includes a thin film transistor device 50 and a photodiode device 51.
  • the thin film transistor devices 50 of the two sensing sub-units are diagonally distributed, and the gate of the thin film transistor device 50 is connected to one of the adjacent single gate lines 30a or the adjacent double gate lines 30b.
  • both the gate line and the data line are arranged in a single line, and there is only one sensing unit in a region defined by two adjacent gate lines and two adjacent ones, and the sensing unit includes a thin film transistor
  • the device and a photodiode sensor device comprise only one sensing subunit. Therefore, compared with the conventional sensor, the arrangement of the double gate lines in the embodiment of the present invention doubles the total number of gate lines, but the number of data lines is reduced to half, and the cost of the gate line driving equipment is lower than the data. The cost of the line drive device, therefore, the use of this structure can further reduce the cost of the sensor.
  • the thin film transistor device uses a top gate type structure
  • the sensor having the structure can be fabricated by using a six-time patterning process, and the mask is reduced compared with the prior art.
  • the use of quantity reduces manufacturing costs, simplifies the production process, and greatly increases the equipment capacity and product yield.
  • a method of manufacturing the above sensor comprising:
  • Step 101 forming a pattern of the data line 31 on the substrate 32 by one patterning process, a pattern of the drain 34 connected to the data line 31, a pattern of the source 33 formed to face the drain 34, and a source A pattern of 33 connected receiving electrodes 39, and a pattern of ohmic layers 35 over source 33 and drain 34.
  • a pattern of the data line 31 on the substrate 32 by one patterning process, a pattern of the drain 34 connected to the data line 31, a pattern of the source 33 formed to face the drain 34, and a source A pattern of 33 connected receiving electrodes 39, and a pattern of ohmic layers 35 over source 33 and drain 34.
  • FIG. 4 and 5 are cross-sectional views of the base substrate after the first patterning process.
  • FIG. 14 and FIG. 15 are respectively a plan view and a cross-sectional view of the sensing unit obtained after the final six processes. Therefore, the substrate of Figs. 3 and 4 is only A-A, line and B-B shown in Fig. 2, and the direction of the line is cut away, which does not represent a sectional view of the substrate of Fig. 2. Similarly, Figures 6 through 13 are also shown in the same manner.
  • the one-time patterning process includes steps of substrate cleaning, film formation, photoresist coating, exposure, development, etching, photoresist removal, and the like.
  • Substrate cleaning includes cleaning with deionized water, organic cleaning solution, and the like.
  • the film forming process is used to form a structural layer to be patterned. For example, for a metal layer, a film is formed by physical vapor deposition (for example, magnetron sputtering), and a pattern is formed by wet etching.
  • a non-metal layer a film is formed by chemical vapor deposition, and dried. Etching forms a pattern.
  • the composition process in the following steps is the same as this, and will not be described again.
  • the data line 31, the source 33, the drain 34, and the receiving electrode 39 may be patterned using a single patterning process using the same material.
  • Step 102 forming a pattern of the photodiode 40 over the receiving electrode 39 and a pattern of the transparent electrode 41 over the photodiode 40 by one patterning process.
  • Step 102 forming a pattern of the photodiode 40 over the receiving electrode 39 and a pattern of the transparent electrode 41 over the photodiode 40 by one patterning process.
  • the step 102 includes: sequentially depositing an N-type semiconductor layer, an I-type semiconductor layer, a P-type semiconductor layer, and a transparent electrode layer, and then forming a photodiode by one patterning process.
  • the pattern of 40 and the pattern of the transparent electrode 41 are sequentially depositing an N-type semiconductor layer, an I-type semiconductor layer, a P-type semiconductor layer, and a transparent electrode layer, and then forming a photodiode by one patterning process. The pattern of 40 and the pattern of the transparent electrode 41.
  • photodiode 40 is a PIN type photodiode, ohmic layer 35 (n+a-Si) of thin film transistor device 50, and N type of PIN type photodiode.
  • the material of the semiconductor 40a is the same.
  • step 101 the pattern of the N-type semiconductor 40a located above the receiving electrode 39 may be first formed in step 101; Then, step 102 is performed: the I-type semiconductor layer, the P-type semiconductor layer, and the transparent electrode layer are sequentially deposited, and the pattern of the photodiode 40 and the pattern of the transparent electrode 41 are formed by one patterning process.
  • the pattern of the transparent electrode 41 may be formed by, for example, wet etching alone, or may be formed by dry etching simultaneously with the I-type semiconductor 40b and the P-type semiconductor 40c.
  • Step 103 forming a pattern of the active layer 36 over the ohmic layer 35 and covering the trench by a patterning process. Please refer to Figure 8 and Figure 9 for the cross-sectional structure after the third patterning process;
  • Step 104 forming a pattern of the gate insulating layer 37 over the active layer 36 by one patterning process.
  • a portion of the gate insulating layer 37 over the transparent electrode 41 needs to be etched away so that the bias electrode formed in step 105 is formed. 42 is directly connected to the transparent electrode 41;
  • Step 105 forming a pattern of the gate line 30 over the gate insulating layer 37, a pattern of the gate electrode 38 connected to the gate line 30, and a pattern of the bias electrode 42 over the transparent electrode 41 by one patterning process,
  • the gate line 30, the gate electrode 38 and the bias electrode 42 can be patterned using a single patterning process using the same material. Refer to Figure 12 and Figure 13 for the cross-sectional structure after the fifth patterning process.
  • step 105 the method further includes:
  • Step 106 forming a pattern of the passivation layer 43 over the gate line 30, the gate 38 and the bias electrode 42 and covering the substrate by one patterning process, the passivation layer 43 having a signal guiding area around the substrate Hole (not shown).
  • the passivation layer 43 having a signal guiding area around the substrate Hole (not shown).
  • step 106 is optional because the purpose of the present invention can be achieved without performing step 105.
  • the method for fabricating a sensor may include only steps 101-105 described above.
  • the manufacturing method of the sensor of the invention can be produced by using a total of six patterning processes. Compared with the prior art, the number of masks used is reduced, the manufacturing cost is reduced, the production process is simplified, and the equipment capacity and products are greatly improved. Yield rate.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un capteur et un procédé de fabrication dudit capteur. Ce capteur comprend : un substrat (32) ; un groupe de lignes de grille (30) et un groupe de lignes de données (31), agencées selon un motif en croix ; et une pluralité d'unités de détection agencées en réseau et définies par le groupe de lignes de grille (30) et le groupe de lignes de données (31), chaque unité de détection comprenant au moins une sous-unité de détection constituée d'un élément transistor à couches minces et d'un élément de détection à photodiode, l'élément transistor à couches minces présentant une structure à grille supérieure. Le capteur présentant cette structure peut être fabriqué par mise en œuvre de six procédés de formation de motifs, et par rapport à l'art antérieur, le nombre de plaques de masque utilisées est réduit, le coût de fabrication est réduit, le processus de fabrication est simplifié et la capacité de l'équipement et le rendement du produit sont améliorés.
PCT/CN2012/085661 2012-07-26 2012-11-30 Capteur et son procédé de fabrication WO2014015601A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210262961.0 2012-07-26
CN201210262961.0A CN102790066B (zh) 2012-07-26 2012-07-26 一种传感器及其制造方法

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WO2014015601A1 true WO2014015601A1 (fr) 2014-01-30

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WO (1) WO2014015601A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102790066B (zh) * 2012-07-26 2016-12-21 北京京东方光电科技有限公司 一种传感器及其制造方法
CN102790064B (zh) * 2012-07-26 2015-04-08 北京京东方光电科技有限公司 一种传感器及其制造方法
CN103560135B (zh) * 2013-11-14 2015-12-02 北京京东方光电科技有限公司 一种x射线传感器的阵列基板及其制造方法

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JP2010245078A (ja) * 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置
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CN102544024A (zh) * 2010-12-29 2012-07-04 京东方科技集团股份有限公司 一种tft探测基板及其制作方法、x射线探测器
CN102790066A (zh) * 2012-07-26 2012-11-21 北京京东方光电科技有限公司 一种传感器及其制造方法

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Publication number Priority date Publication date Assignee Title
US20030201396A1 (en) * 2002-04-03 2003-10-30 Lee Ji Ung Imaging array and methods for fabricating same
CN101216649A (zh) * 2008-01-10 2008-07-09 京东方科技集团股份有限公司 液晶显示装置阵列基板及驱动方法
CN101567378A (zh) * 2008-04-23 2009-10-28 爱普生映像元器件有限公司 固体拍摄装置及其制造方法
JP2010245078A (ja) * 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置
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CN102790066A (zh) * 2012-07-26 2012-11-21 北京京东方光电科技有限公司 一种传感器及其制造方法

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CN102790066B (zh) 2016-12-21

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