WO2014015603A1

WO2014015603A1 - Sensor and method for manufacturing same

Info

Publication number: WO2014015603A1
Application number: PCT/CN2012/085689
Authority: WO
Inventors: 徐少颖; 谢振宇; 陈旭
Original assignee: 北京京东方光电科技有限公司
Priority date: 2012-07-26
Filing date: 2012-11-30
Publication date: 2014-01-30
Also published as: CN102790060B; CN102790060A

Abstract

A sensor and a method for manufacturing same. The sensor comprises: a plurality of sensing units arranged in an array and defined by a group of gate lines and a group of data lines; and a group of bias lines passing through each sensing unit. Each sensing unit comprises at least one sensing subunit consisting of a thin film transistor element and a photodiode sensing element. The sensor is manufactured by adopting five patterning processes. Patterns of an active layer, an ohmic layer, a source, a drain, the data lines, a receiving electrode, a photodiode and a transparent electrode are formed through one patterning process.

Description

Sensor and method of manufacturing the same

Embodiments of the present invention relate to a sensor and a method of fabricating the same. Background technique

Due to the needs of health care, various non-invasive medical detection methods are gradually favored by people. Among the many non-invasive detection methods, computed tomography (CT) has been widely used. One of the indispensable parts of a computed tomography device is the sensor.

A basic structure of a sensor is shown in FIG. 1. The sensor 12 includes a plurality of scan lines 15, a plurality of data lines 16, and a plurality of sensing units, each of which includes a photodiode 13 and a field effect transistor ( Field Effect Transistor (FET) 14, the gate of the field effect transistor 14 is connected to a corresponding scan line 15 in the sensor 12, the drain of the field effect transistor 14 and the corresponding data line in the sensor 12 (Data Line) 16 The photodiode 13 is connected to the source of the field effect transistor 14. One end of these data lines 16 is connected to the data readout circuit 18 via a connection pin 17.

The above sensor operates on the principle that the sensor 12 applies a drive scan signal through the scan line 15 to control the switching state of the field effect transistor 14 of each sense unit. When the field effect transistor 14 is turned on, the photocurrent signal generated by the photodiode 13 is sequentially output through the data line 16 connected to the field effect transistor 14 and the data readout circuit 18, by controlling the timing of the signal on the scan line 15 and the data line 16. The collecting function of the photocurrent signal is realized, that is, the control effect of the photocurrent signal generation generated by the photodiode 13 is realized by controlling the switching state of the FET 14.

At present, the sensor usually adopts a thin film transistor (TFT) flat plate structure, and the sensor may have multiple layers in a cross section. For example, each sensing unit includes: a substrate, a gate layer, a gate insulating layer, Active layer, source and drain layers, passivation layer, PIN junction and transparent electrode window layer of PIN photosensor, and bias line layer and light barrier layer. Of course, the specific layers on the cross-section are not exactly the same due to the difference in specific structures.

Each layer of the sensor is typically formed by a patterning process, and each patterning process typically includes steps such as masking, exposure, development, etching, and stripping. That is, in order to achieve multiple sensors Layers require multiple patterning processes. For example, the above-mentioned sensor having a plurality of layers usually requires 9 to 11 patterning processes at the time of manufacture, so that 9 to 11 mask masks are required correspondingly, thereby making the manufacturing cost of the sensor high, and the manufacturing process is relatively high. Complex, and the production capacity is difficult to upgrade. Summary of the invention

It is an object of the present invention to provide a sensor and a method of manufacturing the same, which solves the technical problem of high manufacturing cost of the sensor existing in the prior art, complicated manufacturing process, and difficulty in improving production capacity. According to a first aspect of the present invention, a sensor is provided, comprising: a substrate substrate, a set of gate lines and a set of data lines arranged in a cross, an array defined by the set of gate lines and a set of data lines a plurality of sensing units arranged in a row, and a set of bias lines extending through each of the sensing units, each sensing unit comprising at least one sensing subunit composed of a thin film transistor device and a photodiode sensing device, wherein

The thin film transistor device includes: a gate electrode over the substrate substrate and connected to an adjacent gate line; a gate insulating layer over the gate and covering the substrate substrate; An active layer above the gate insulating layer, above the gate; an ohmic layer over the active layer; a source and a drain over the ohmic layer and oppositely forming a channel, The drain is connected to an adjacent data line;

The photodiode sensor device includes: a receiving electrode connected to the source, a photodiode over the receiving electrode, a transparent electrode over the photodiode, and a bias on the transparent electrode a pressure electrode, the bias electrode being connected to an adjacent bias line.

According to a second aspect of the present invention, a method of manufacturing a sensor, comprising: forming a pattern of a gate line, a pattern of a gate connected to the gate line by a patterning process on a substrate;

Forming a gate insulating layer covering the base substrate, and forming a pattern of an active layer above the gate, a pattern of an ohmic layer over the active layer, located at a location by a first patterning process a pattern of a source and a drain formed above the ohmic layer and oppositely formed, a pattern of a data line connected to the drain, a pattern of a receiving electrode connected to the source, and a receiving electrode a pattern of the photodiode above, a pattern of transparent electrodes on the photodiode; a pattern of the first passivation layer formed by the second patterning process, the first passivation layer not covering the bias electrode And the zone i of the bias line; and Forming a pattern of a bias electrode over the transparent electrode, a pattern of a bias line connected to the bias electrode, and a location over the source, drain, and channel by a third patterning process The pattern of the light barrier.

The thin film transistor device of the sensor according to the embodiment of the invention is of a bottom gate type, and the manufacturing of the sensor can be formed by using a lesser number of patterning processes. Compared with the prior art, the number of masks used is reduced, and the number of masks is reduced. Manufacturing costs simplify the production process and greatly increase the equipment capacity and product yield. DRAWINGS

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly described below. It is obvious that the drawings in the following description relate only to some embodiments of the present invention, and are not intended to limit the present invention. .

1 is a schematic perspective view of a conventional sensor;

2 is a top plan view of one of the sensing units of the sensor according to the embodiment of the present invention;

3 is a top plan view of a plurality of sensing units arranged in an array of sensors according to an embodiment of the present invention;

4 is a cross-sectional view of the sensing unit along the line A-A of FIG. 2 after the first patterning process according to an embodiment of the present invention;

5 is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the first patterning process according to an embodiment of the present invention;

6 is a cross-sectional view of the sensing unit along the line A-A of FIG. 2 after the second patterning process according to an embodiment of the present invention;

7 is a cross-sectional view of the sensing unit along line B-B of FIG. 2 after the second patterning process according to an embodiment of the present invention;

8 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along line A-A of FIG. 2 after the third patterning process;

9 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line B-B of FIG. 2 after the third patterning process;

10 is a cross-sectional view of the sensing unit along line AA of FIG. 2 after the fourth patterning process according to an embodiment of the present invention; 11 is a cross-sectional view of the sensing unit along line BB of FIG. 2 after the fourth patterning process according to an embodiment of the present invention;

12 is a cross-sectional view of the sensing unit taken along line A-A of FIG. 2 after the fifth patterning process according to an embodiment of the present invention;

Figure 13 is a cross-sectional view of the sensing unit of the embodiment of the present invention taken along the line B-B of Figure 2 after the fifth patterning process.

Reference mark:

12-sensor 13-photodiode 14-field effect transistor

15-scan line 16-data line 17-connect pin

18-data readout circuit 30-gate line 31-data line

32-substrate substrate 33-source 34-drain

35-ohm layer 36-active layer 37-gate insulating layer

38-gate 39-receiving electrode 40-photodiode

41-transparent electrode 42a-bias electrode 40a-N type semiconductor

40b-I type semiconductor 40c-P type semiconductor 43-first passivation layer

30a-single gate line 30b-double gate line 50-thin film transistor device

42b-bias line 52-light barrier 57-second passivation layer

53-photodiode material layer 54-transparent electrode material layer 55-active material layer

56-ohm material layer

The technical solutions of the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings of the embodiments of the present invention. It is apparent that the described embodiments are part of the embodiments of the invention, rather than all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the described embodiments of the present invention without departing from the scope of the invention are within the scope of the invention.

Unless otherwise defined, technical terms or scientific terms used herein shall be of ordinary meaning as understood by those of ordinary skill in the art to which the invention pertains. The term "connected" as used in the specification and claims of the present invention is not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "上", "下下", "左", "Right" or the like is only used to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship is also changed accordingly.

In the following embodiments of the invention, the sensor may be an X-ray sensor or other type of sensor, such as a sensor that transmits by photoelectric conversion. In the following description and illustration, for a single sensing unit, other sensing units may be formed identically.

In order to solve the technical problem that the manufacturing cost of the sensor existing in the prior art is high and the manufacturing process is complicated, the embodiment of the present invention provides a sensor and a manufacturing method thereof.

2 shows a top view of one of the sensing units of the sensor in accordance with one embodiment of the present invention. 12 and 13 are cross-sectional views of the sensing unit of Fig. 2 taken along line A-A, line and B-B. As shown in FIG. 2, FIG. 12 and FIG. 13, the sensor includes: a substrate substrate 32, a set of gate lines 30 and a set of data lines 31 arranged in a cross, a set of gate lines 30 and a set of data a plurality of sensing units arranged in an array defined by line 31, and a set of bias lines 42b extending through each of the sensing units, each sensing unit comprising at least one of a thin film transistor device and a photodiode sensor device Sensing subunit, wherein

The thin film transistor device includes: a gate electrode 38 over the substrate substrate 32 and connected to the adjacent gate line 30; a gate insulating layer 37 over the gate electrode 38 and covering the substrate; and the gate insulating layer 37 Above, an active layer 36 over the gate 38; an ohmic layer 35 over the active layer 36; a source 33 and a drain 34 overlying the ohmic layer 35 and oppositely forming a channel, the drain The pole 34 is connected to the adjacent data line 31;

The photodiode sensor device includes: a receiving electrode 39 connected to the source 33, a photodiode 40 above the receiving electrode 39, a transparent electrode 41 above the photodiode 40, and a bias voltage over the transparent electrode 41. The electrode 42a, the bias electrode 42a is connected to an adjacent bias line 42b.

In the embodiment of the present invention, the base substrate 32 may be a substrate of a glass substrate, a plastic substrate or other materials; the gate line 30, the gate 38, the data line 31, the source 33, the drain 34, and the receiving electrode. 39. The bias electrode 42a, the bias line 42b and the light blocking strip 52 (the function of which is to reduce the influence of light on the channel) can be made of the same material, such as aluminum-niobium alloy (AlNd), aluminum (A1). A single layer film of copper (Cu), molybdenum (Mo), molybdenum-tungsten alloy (MoW) or chromium (Cr) may be a composite film composed of any combination of these metal elements or alloy materials. The thickness of these single or composite films is, for example, between 150 nm and 450 nm. In the embodiment of the present invention, the material of the ohmic layer 35 may be a doped semiconductor (n+a-Si); the material of the active layer 36 may be a semiconductor material, such as amorphous silicon (a-Si), and the thickness is, for example, The material of the gate insulating layer 37 may be silicon nitride, and the thickness is, for example, between 300 nm and 500 nm; the material of the transparent electrode 41 may be, for example, indium tin oxide (ITO) or indium oxide. Transparent conductive material such as (IZO).

In the embodiment of the present invention, the photodiode may be a PIN type photodiode, including: an N-type semiconductor (n+a-Si) 40a located above the receiving electrode 39, and an I-type semiconductor located above the N-type semiconductor 40a ( a-Si) 40b, and a P-type semiconductor (p+a-Si) 40c over the I-type semiconductor 40b. The PIN type photodiode works by the photovoltaic principle and has the advantages of small junction capacitance, short transit time, and high sensitivity. The structure is equivalent to inserting a thicker intrinsic amorphous silicon layer in the middle of the PN junction, wherein the P-type material is formed by intrinsic material doping impurities which provide holes, and the N-type material is formed by intrinsic material doping impurities which provide electrons. In other embodiments of the invention, photodiodes may also utilize other types of photodiodes such as MIS type photodiodes.

Continuing to refer to FIG. 12 and FIG. 13, in one embodiment, the sensor may further include: under each of the data lines 31 and the receiving electrodes 39 of each of the photodiode sensing devices, sequentially located in the gate insulating layer An active material layer 55 and an ohmic material layer 56 above 37;

A layer of photodiode material 53 overlying a set of data lines 31 and a source 33 and a drain 34 of each thin film transistor device, a layer 54 of transparent electrode material over the layer of photodiode material 53.

In an embodiment, the sensor may further include:

a first passivation layer 43 over the transparent electrode material layer 54 and the transparent electrode 41. The first passivation layer 43 does not cover the bias electrode 42a and the bias line 42b;

a light blocking strip located above the first passivation layer 43 and located above the source 33, the drain 34 and the channel

52;

a second passivation layer 57 located above the light blocking strip 52 and covering the substrate, the second passivation layer 57 having a signal guiding area via hole (FIG. 12 and FIG. 13 are cross-sectional structures of one sensing unit, and thus are located on the substrate The surrounding signal guiding area vias are not shown in the figure).

In the embodiment of the present invention, the materials of the data line 31, the source 33, the drain 34, and the receiving electrode 39 are preferably the same. The materials of the light blocking strip 52, the bias electrode 42a, and the bias line 42b are preferably the same. The photodiode material layer 53, the transparent electrode material layer 54, the active material layer 55, and the ohmic material layer 56 are respectively connected to the photodiode 40, the transparent electrode 41, the active layer 36, and the ohmic layer 35. The materials are the same. The purpose of this structural design is to reduce the number of patterning processes, and the photodiode material layer 53, the transparent electrode material layer 54, the active material layer 55, and the ohmic material layer 56 do not play a practical role in the sensor. The first passivation layer 43 (and the second passivation layer 57 hereinafter) may be an inorganic insulating film (for example, silicon nitride or the like) or an organic insulating film (for example, a photosensitive resin material or a non-photosensitive resin material, etc.), for example, in thickness Between 150 nm and 1500 nm.

3 shows a top view of a plurality of sensing units of a sensor in accordance with an embodiment of the present invention. As shown in FIG. 3, the set of gate lines 30 includes two single gate lines 30a, and a plurality of sets of double gate lines 30b between the two single gate lines 30a (adjacent two double gate lines 30b constitute A group) . Each of the sensing units includes two sensing subunits, each of which includes a thin film transistor device 50 and a photodiode device 51. The thin film transistor devices 50 of the two sensing subunits are diagonally distributed, and the gate of the thin film transistor device 50 is connected to an adjacent one of the single gate lines 30a or the adjacent double gate lines 30b. In a conventional sensor, both the gate line and the data line are arranged in a single line, and there is only one sensing unit in a region defined by two adjacent gate lines and two adjacent ones, and the sensing unit includes a thin film transistor The device and a photodiode sensor device comprise only one sensing subunit. Therefore, compared with the conventional sensor, the arrangement of the double gate lines in the embodiment of the present invention doubles the total number of gate lines, but the number of data lines is reduced to half, and the cost of the gate line driving equipment is lower than the data. The cost of the line drive device, therefore, the use of this structure can further reduce the cost of the sensor.

In addition, as shown in FIG. 2, in the embodiment, the bias line 42b is located between two sensing subunits of the sensing unit, and is connected to the bias electrodes 42a of the two sensing subunits. "Cross-shaped", which improves the uniformity of the voltage between the bias electrode and the transparent electrode compared to the conventional "in-line" bias line.

In the embodiment of the invention, the thin film transistor device of the sensor is a bottom gate type, and the manufacturing of the sensor can be formed by using a five-time patterning process. Compared with the prior art, the number of masks used in the manufacturing process can be reduced, and the number of masks is reduced. Manufacturing costs simplify the production process and greatly increase the equipment capacity and product yield.

According to another embodiment of the present invention, a method of manufacturing the above sensor, comprising:

Step 101: A pattern of the gate line 30 and a pattern of the gate electrode 38 connected to the gate line 30 are formed on the base substrate 32 by one patterning process. Please refer to Figure 4 and Figure 5 for the cross-sectional structure after the first patterning process. 3 and 4 are cross-sectional views of the base substrate after the first patterning process. 2 and 12 and FIG. 12 are a plan view and a cross-sectional view, respectively, of the sensing unit obtained after five passes of the process. Therefore, the base substrate in FIGS. 3 and 4 is only cut along the direction of AA, line and BB shown in FIG. 2, which does not represent a cross-sectional view of the base substrate of FIG. 2. Also, FIGS. 5 to 11 are also shown in the same manner.

The one-time patterning process includes steps of substrate cleaning, film formation, photoresist coating, exposure, development, etching, photoresist removal, and the like. Substrate cleaning includes cleaning with deionized water, organic cleaning solution, and the like. The film forming process is used to form a structural layer to be patterned. For example, for a metal layer, a film is formed by physical vapor deposition (for example, magnetron sputtering), and a pattern is formed by wet etching. For a non-metal layer, a film is formed by chemical vapor deposition, and dried. Etching forms a pattern. The composition process in the following steps is the same as this, and will not be described again.

Step 102, forming a gate insulating layer 37 covering the substrate, and forming a pattern of the active layer 36 over the gate electrode 38, a pattern of the ohmic layer 35 over the active layer 36, in the ohmic layer 35 by one patterning process. The pattern of the source 33 and the drain 34 forming the channel, the pattern of the data line 31 connected to the drain 34, the pattern of the receiving electrode 39 connected to the source 33, and the receiving electrode 39 are formed on the upper side. The pattern of the photodiode 40, the pattern of the transparent electrode 41 above the photodiode 40. Please refer to Figure 6 and Figure 7 for the cross-sectional structure after the second patterning process;

In one embodiment, when the photodiode 40 is a PIN photodiode, and the materials of the data line 31, the source 33, the drain 34, and the receiving electrode 39 are the same, in step 102, the active layer is formed by one patterning process. The pattern of 36, the pattern of the ohmic layer 35, the pattern of the source 33 and the drain 34, the pattern of the data line 31, the pattern of the receiving electrode 39, the pattern of the photodiode 40, and the pattern of the transparent electrode 41 include:

Depositing an active semiconductor layer, an ohmic semiconductor layer, a data line material layer, an N-type semiconductor layer, an I-type semiconductor layer, a P-type semiconductor layer, and a transparent conductive material layer;

Coating a photoresist;

基板 Exposing the substrate with a mask having a fully transparent region, a semi-transmissive region, and an opaque region, wherein the opaque region correspondingly forms the receiving electrode 39, the PIN photodiode, the transparent electrode 41, the data line 31, and the drain a region of the pole 34 and the source 33, the semi-transmissive region corresponding to the region forming the channel; the mask used in this step may be a gray tone mask or a halftone mask;

Developing, removing the photoresist in the corresponding region of the entire transparent region; Etching the substrate to form a pattern of the receiving electrode 39, a pattern of the PIN photodiode, a pattern of the transparent electrode 41, a pattern of the data line 31, and a pattern of the active layer 36;

Ashing the substrate to remove the photoresist in the corresponding region of the semi-transmissive region;

The substrate is etched and photoresist stripped to form a pattern of the ohmic layer 35 and a pattern of the drain 34 and the source 33, and the source 33 and the drain 34 are opposed to each other to form a channel.

In the patterning process, the pattern of the transparent electrode 41 may be formed by wet etching alone or by dry etching simultaneously with the pattern of the photodiode 40.

Step 103, forming a pattern of the first passivation layer 43 by one patterning process, the first passivation layer 43 not covering the region where the bias electrode 42a and the bias line 42b are formed, that is, the formation of 42a and 42b is reserved. Space. This is because the bias electrode 42a and the bias line 42b formed next need to be connected to the transparent electrode 41. Referring to FIG. 8 and FIG. 9 for the cross-sectional structure after the third patterning process; Step 104, forming a pattern of the bias electrode 42a over the transparent electrode 41 by one patterning process, and connecting with the bias electrode 42a The pattern of the bias line 42b, and the pattern of the light blocking strips 52 above the source 33, the drain 34 and the channel. Refer to Figure 10 and Figure 11 for the cross-sectional structure after the fourth patterning process. In one embodiment, the light blocking strip 52, the bias electrode 42a, and the bias line 42b are made of the same material.

In addition, after step 104, the method further includes:

Step 105, forming a pattern of the second passivation layer 57 covering the substrate by one patterning process, the second passivation layer 57 has a signal guiding area via hole, and the cross-sectional structure after the fifth patterning process is shown in FIG. 13 and 14 is shown.

This step 105 is optional because the purpose of the present invention can be achieved without performing step 105. Thus, in one embodiment, the method for fabricating a sensor may include only steps 101-104 described above.

It can be seen that the manufacturing method of the sensor of the present invention can be fabricated by using four or five patterning processes in total, which reduces the use of the mask, reduces the manufacturing cost, simplifies the production process, and greatly improves the equipment production rate compared with the prior art. And the yield of the product.

The above is only an exemplary embodiment of the present invention, and is not intended to limit the scope of the present invention. The scope of the present invention is defined by the appended claims.

Claims

claims

1. A sensor, comprising: a substrate, a set of gate lines and a set of data lines arranged in a crosswise manner, and a plurality of sensors arranged in an array defined by the set of gate lines and a set of data lines. A sensing unit, and a set of bias lines running through each sensing unit, each sensing unit including at least one sensing subunit composed of a thin film transistor device and a photodiode sensing device, wherein,

The thin film transistor device includes: a gate located on the base substrate and connected to an adjacent gate line; a gate insulating layer located on the gate electrode and covering the base substrate; The active layer above the gate insulating layer and above the gate; the ohmic layer located above the active layer; the source and drain located above the ohmic layer and facing each other to form a channel, the The drain is connected to the adjacent data line;

The photodiode sensing device includes: a receiving electrode connected to the source, a photodiode located above the receiving electrode, a transparent electrode located above the photodiode, and a bias electrode located above the transparent electrode. A piezoelectric electrode, the bias electrode is connected to an adjacent bias line.

2. The sensor of claim 1, wherein the set of gate lines includes two single gate lines, and a plurality of sets of double gate lines located between the two single gate lines,

Each of the sensing units includes two sensing sub-units, the thin film transistor devices of the two sensing sub-units are distributed diagonally, and the gates of the thin film transistor devices are connected to adjacent single gate lines or adjacent double gates. The closer one of the wires is connected.

3. The sensor according to claim 2, wherein the bias line is located between two sensing sub-units of the sensing unit and is cross-connected with the bias electrodes of the two sensing sub-units.

4. The sensor according to any one of claims 1-3, further comprising:

Below each data line and the receiving electrode of each photodiode sensing device, there are active material layers and ohmic material layers located above the gate insulating layer;

A layer of photodiode material located over a set of data lines and the source and drain electrodes of each thin film transistor device. A layer of transparent electrode material located over the layer of photodiode material.

5. The sensor according to any one of claims 1-4, further comprising:

A first passivation layer located on the transparent electrode material layer and the transparent electrode, the first passivation layer does not cover the bias electrode and bias line;

A light blocking strip located above the first passivation layer and above the source, drain and channel; A second passivation layer is located above the light blocking strip and covers the base substrate, and the second passivation layer has a signal guide area via hole.

6. The sensor according to any one of claims 1 to 5, wherein the data line, source electrode, drain electrode and receiving electrode are made of the same material.

7. The sensor according to claim 5 or 6, wherein the light blocking strip, bias electrode and bias line are made of the same material;

8. The sensor according to any one of claims 4 to 7, wherein the photodiode material layer, transparent electrode material layer, active material layer and ohmic material layer are respectively in contact with the photodiode, transparent electrode and active layer. The same material as the ohmic layer.

9. The sensor according to any one of claims 1-8, wherein the photodiode is

PIN-type photodiodes include: N-type semiconductor located on the receiving electrode, I-type semiconductor located on the N-type semiconductor, and P-type semiconductor located on the I-type semiconductor.

10. A method of manufacturing a sensor, including:

Forming a pattern of gate lines and a pattern of gate electrodes connected to the gate lines on the base substrate through a patterning process;

A gate insulating layer covering the base substrate is formed, and through a first patterning process, the pattern of the active layer located above the gate, the pattern of the ohmic layer located above the active layer, and the pattern of the ohmic layer located above the active layer are formed through the first patterning process. Patterns of source and drain electrodes forming a channel on the ohmic layer and facing each other, patterns of data lines connected to the drain electrodes, patterns of receiving electrodes connected to the source electrodes, and patterns located on the receiving electrodes. The pattern of the photodiode above, the pattern of the transparent electrode located above the photodiode;

The pattern of the first passivation layer is formed through a second patterning process, and the first passivation layer does not cover the area where the bias electrode and the bias line are formed; and

Through the third patterning process, the pattern of the bias electrode located above the transparent electrode, the pattern of the bias line connected to the bias electrode, and the pattern located above the source electrode, drain electrode and channel are formed. Graphics of light bars.

11. The manufacturing method according to claim 10, wherein after forming the pattern of the bias electrode, the pattern of the bias line and the pattern of the light blocking strip, further comprising:

A pattern of the second passivation layer covering the base substrate is formed through a fourth patterning process, and the second passivation layer has a signal guide area via hole.

12. The manufacturing method according to claim 10 or 11, wherein the photodiode is a PIN Type photodiodes include N-type semiconductors, I-type semiconductors and P-type semiconductors.

13. The manufacturing method according to any one of claims 10 to 12, wherein the data line, source electrode, drain electrode and receiving electrode are made of the same material; the light blocking strip, bias electrode and bias voltage The threads are made of the same material.

14. The manufacturing method according to any one of claims 10 to 12, wherein the pattern of the active layer, the pattern of the ohmic layer, the pattern of the source electrode and the drain electrode, and the pattern of the data line are formed through one patterning process. , the pattern of the receiving electrode, the pattern of the photodiode and the pattern of the transparent electrode, including:

Deposit the active semiconductor layer, the ohmic semiconductor layer, the data line material layer, the N-type semiconductor layer, the I-type semiconductor layer, the P-type semiconductor layer and the transparent conductive material layer in sequence, and coat the photoresist on the transparent conductive material layer;

The substrate is exposed using a mask plate having a fully transparent area, a semi-transparent area and an opaque area, wherein the opaque area corresponds to the receiving electrode, PIN photodiode, transparent electrode, data line and drain electrode. and the source area, the semi-transparent area corresponds to the area where the channel is formed;

Develop and etch the base substrate to form the pattern of the receiving electrode, the pattern of the PIN photodiode, the pattern of the transparent electrode, the pattern of the data line and the pattern of the active layer;

The base substrate is ashed, etched, and photoresist stripped to form the pattern of the ohmic layer and the patterns of the drain and source electrodes. The source electrode and the drain electrode are placed opposite to form a channel.

15. The manufacturing method according to any one of claims 10 to 14, wherein the pattern of the transparent electrode is formed by wet etching, or the pattern of the transparent electrode and the pattern of the photodiode are formed by dry etching at the same time. Formed by etching.