CN102790060B - 一种传感器及其制造方法 - Google Patents
一种传感器及其制造方法 Download PDFInfo
- Publication number
- CN102790060B CN102790060B CN201210262535.7A CN201210262535A CN102790060B CN 102790060 B CN102790060 B CN 102790060B CN 201210262535 A CN201210262535 A CN 201210262535A CN 102790060 B CN102790060 B CN 102790060B
- Authority
- CN
- China
- Prior art keywords
- electrode
- layer
- photodiode
- bias
- data wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000002161 passivation Methods 0.000 claims description 25
- 239000012212 insulator Substances 0.000 claims description 15
- 239000007772 electrode material Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000011149 active material Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000004380 ashing Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 15
- 230000005669 field effect Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 108010076504 Protein Sorting Signals Proteins 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- VVTQWTOTJWCYQT-UHFFFAOYSA-N alumane;neodymium Chemical compound [AlH3].[Nd] VVTQWTOTJWCYQT-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- -1 insulative Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210262535.7A CN102790060B (zh) | 2012-07-26 | 2012-07-26 | 一种传感器及其制造方法 |
PCT/CN2012/085689 WO2014015603A1 (zh) | 2012-07-26 | 2012-11-30 | 传感器及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210262535.7A CN102790060B (zh) | 2012-07-26 | 2012-07-26 | 一种传感器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102790060A CN102790060A (zh) | 2012-11-21 |
CN102790060B true CN102790060B (zh) | 2014-06-04 |
Family
ID=47155421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210262535.7A Active CN102790060B (zh) | 2012-07-26 | 2012-07-26 | 一种传感器及其制造方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102790060B (zh) |
WO (1) | WO2014015603A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102790060B (zh) * | 2012-07-26 | 2014-06-04 | 北京京东方光电科技有限公司 | 一种传感器及其制造方法 |
CN103560135B (zh) * | 2013-11-14 | 2015-12-02 | 北京京东方光电科技有限公司 | 一种x射线传感器的阵列基板及其制造方法 |
CN111312848A (zh) * | 2020-02-26 | 2020-06-19 | 光丰科技(浙江)有限公司 | 光电探测器、集成光电探测器及其制作方法 |
CN111753742A (zh) * | 2020-06-28 | 2020-10-09 | 上海天马微电子有限公司 | 光电感应基板、平板探测器、指纹识别装置及显示装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020069414A (ko) * | 2001-02-26 | 2002-09-04 | 삼성전자 주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
CN101567378A (zh) * | 2008-04-23 | 2009-10-28 | 爱普生映像元器件有限公司 | 固体拍摄装置及其制造方法 |
KR20110134226A (ko) * | 2010-06-08 | 2011-12-14 | 한국표준과학연구원 | 전자빔용 이미지 센서 및 그의 제조 방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7452782B2 (en) * | 2005-11-21 | 2008-11-18 | Hannstar Display Corp. | Image TFT array of a direct X-ray image sensor and method of fabricating the same |
CN102790060B (zh) * | 2012-07-26 | 2014-06-04 | 北京京东方光电科技有限公司 | 一种传感器及其制造方法 |
-
2012
- 2012-07-26 CN CN201210262535.7A patent/CN102790060B/zh active Active
- 2012-11-30 WO PCT/CN2012/085689 patent/WO2014015603A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020069414A (ko) * | 2001-02-26 | 2002-09-04 | 삼성전자 주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
CN101567378A (zh) * | 2008-04-23 | 2009-10-28 | 爱普生映像元器件有限公司 | 固体拍摄装置及其制造方法 |
KR20110134226A (ko) * | 2010-06-08 | 2011-12-14 | 한국표준과학연구원 | 전자빔용 이미지 센서 및 그의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
WO2014015603A1 (zh) | 2014-01-30 |
CN102790060A (zh) | 2012-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102790067B (zh) | 一种传感器及其制造方法 | |
CN110047880B (zh) | 显示面板 | |
CN102790069B (zh) | 一种传感器及其制造方法 | |
CN102790062B (zh) | 一种传感器的制造方法 | |
CN102790063A (zh) | 一种传感器及其制造方法 | |
CN102629613B (zh) | 一种x射线传感器的制作方法 | |
CN102790064B (zh) | 一种传感器及其制造方法 | |
CN102790060B (zh) | 一种传感器及其制造方法 | |
CN107104108A (zh) | 一种阵列基板及其制作方法、平板探测器及影像设备 | |
CN102790065B (zh) | 一种传感器及其制造方法 | |
CN102790061B (zh) | 一种传感器及其制造方法 | |
CN102790066A (zh) | 一种传感器及其制造方法 | |
CN102832222B (zh) | 一种传感器及其制造方法 | |
CN102800750B (zh) | 一种传感器的制造方法 | |
CN102790068B (zh) | 一种传感器的制造方法 | |
CN110854077B (zh) | 一种显示面板及其制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141208 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141208 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
|
TR01 | Transfer of patent right |
Effective date of registration: 20141208 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing city in Western Daxing District economic and Technological Development Zone, Road No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |