CN110854077B - 一种显示面板及其制作方法 - Google Patents

一种显示面板及其制作方法 Download PDF

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CN110854077B
CN110854077B CN201911034331.6A CN201911034331A CN110854077B CN 110854077 B CN110854077 B CN 110854077B CN 201911034331 A CN201911034331 A CN 201911034331A CN 110854077 B CN110854077 B CN 110854077B
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CN110854077A (zh
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刘念
卢马才
温雷
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本发明提供一种显示面板及其制作方法，该方法包括：在玻璃基板上制作间隔设置的主栅极和次栅极，其中至少部分所述次栅极具有透光区域；在所述主栅极、所述次栅极以及所述玻璃基板上制作栅绝缘层；在所述栅绝缘层上制作半导体层，对所述半导体层进行图案化处理得到主有源层和次有源层，所述次有源层的位置与所述透光区域的位置对应；在所述主有源层和所述次有源层以及栅绝缘层上制作第二金属层，对所述第二金属层进行图案化处理，得到主源漏极和次源漏极。本发明的显示面板及其制作方法，能够增大光电流，从而提高触控功能的灵敏性和准确性。

Description

一种显示面板及其制作方法
【技术领域】
本发明涉及显示技术领域，特别是涉及一种显示面板及其制作方法。
【背景技术】
目前的触控技术包括on-cell和in-cell两种，on-cel1是将触控、指纹识别对应的传感器独立安装在显示面板外，因而无法做到在显示面板上的定点感应。
而in-cell是将触摸功能嵌入到液晶像素中的触控技术，但是由于目前这种方式主要使用顶部照光(top)的方式，容易受到沟道面积及背沟道缺陷的影响，导致光电流较低，因此降低了触控功能的灵敏性和准确性。
因此，有必要提供一种显示面板及其制作方法，以解决现有技术所存在的问题。
【发明内容】
本发明的目的在于提供一种显示面板及其制作方法，能够增大光电流，从而提高了触控功能的灵敏性和准确性。
为解决上述技术问题，本发明提供一种显示面板的制作方法，包括：
在玻璃基板上制作间隔设置的主栅极和次栅极，其中至少部分所述次栅极具有透光区域；
在所述主栅极、所述次栅极以及所述玻璃基板上制作栅绝缘层；
在所述栅绝缘层上制作半导体层，对所述半导体层进行图案化处理得到主有源层和次有源层，所述次有源层的位置与所述透光区域的位置对应；
在所述主有源层、所述次有源层以及所述栅绝缘层上制作第二金属层，对所述第二金属层进行图案化处理，得到主源漏极和次源漏极。
本发明还提供一种显示面板，其包括：
玻璃基板；
间隔设置的主栅极和次栅极，均设于所述玻璃基板上；至少所述次栅极的部分具有透光区域；
栅绝缘层，设于所述主栅极、所述次栅极以及所述玻璃基板上；
主有源层和次有源层，均设于所述栅绝缘层上；所述次有源层的位置与所述透光区域的位置对应；
主源漏极，设于所述主有源层和所述栅绝缘层上；
次源漏极，设于所述次有源层和所述栅绝缘层上。
本发明的显示面板及其制作方法，通过在玻璃基板上制作间隔设置的主栅极和次栅极，其中至少部分所述次栅极具有透光区域；在所述主栅极、所述次栅极以及玻璃基板上制作栅绝缘层；在所述栅绝缘层上制作半导体层，对所述半导体层进行图案化处理得到主有源层和次有源层，所述次有源层的位置与所述透光区域的位置对应；在所述主有源层、所述次有源层以及所述栅绝缘层上制作第二金属层，对所述第二金属层进行图案化处理，得到主源漏极和次源漏极；由于与次有源层对应的栅极为透光区域，因此增加了次薄膜晶体管的感光面积，因而增大了光照电流，进而提高了触控功能的灵敏性和准确性。
【附图说明】
图1为本发明实施例一的显示面板的制作方法的第一步的第一分步结构示意图。
图2为本发明实施例一的显示面板的制作方法的第一步的第二分步结构示意图。
图3为本发明实施例一的显示面板的制作方法的第二步的第一分步的结构示意图。
图4为本发明实施例一的显示面板的制作方法的第二步的第二分步的结构示意图。
图5为本发明实施例一的显示面板的制作方法的第三步的结构示意图。
图6为本发明实施例一的显示面板的制作方法的第四步的结构示意图。
图7为本发明实施例一的显示面板的制作方法的第五步的结构示意图。
图8为本发明实施例一的显示面板的制作方法的第六步的结构示意图。
图9为本发明实施例一的显示面板的制作方法的第七步的结构示意图。
图10为本发明实施例二的显示面板的结构示意图。
图11为本发明实施例三的显示面板的结构示意图。
图12为本发明的次薄膜晶体管在不同光照下的电流与电压之间的曲线图。
【具体实施方式】
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1至11，本发明提供一种显示面板的制作方法包括：
S11、在玻璃基板上制作间隔设置的主栅极和次栅极，其中至少部分所述次栅极具有透光区域；
如图4所示，在一实施方式中，在玻璃基板11上制作间隔设置的主栅极和次栅极，在一实施方式中，其中所述主栅极包括第一栅极部131和主透光部121，所述次栅极部包括第二栅极部132和次透光部122，其中与所述次透光部122对应的位置形成透光区域(图中未示出)。当然可以理解的，如图10所示，主栅极也可不包括主透光部，也即整个主栅极都为不透光区域。如图11所示，整个次栅极可都为透光区域。
S12、在所述主栅极和所述次栅极上制作栅绝缘层；
如图5所示，在所述主栅极和所述次栅极上制作栅绝缘层14。栅极绝缘层14的材料可为SiNx、SiOx中的至少一种，也即可为单层或者SiOx/SiNx叠层。
S13、在所述栅绝缘层上制作半导体层，对所述半导体层进行图案化处理得到主有源层和次有源层，所述次有源层的位置与所述透光区域的位置对应；
例如，如图6所示，在所述栅绝缘层14上制作半导体层15，对所述半导体层15进行图案化处理得到主有源层151和次有源层152，所述次有源层152的位置与所述透光区域的位置对应；也即与次透光部的位置对应。
S14、在所述主有源层、所述次有源层以及栅绝缘层上制作第二金属层，对所述第二金属层进行图案化处理，得到主源漏极和次源漏极。
例如，如图7所示，在所述主有源层151、所述次有源层152和栅绝缘层14上制作第二金属层16，对所述第二金属层16进行图案化处理，得到主源漏极161和次源漏极162。第二金属层16的材料结构可为Mo/Al或者Mo/Cu叠层。
其中主栅极、主有源层以及主源漏极组成主薄膜晶体管，也即开关薄膜晶体管(左侧的TFT)；次栅极、次有源层以及次源漏极组成次薄膜晶体管(右侧的TFT)，也即相当于传感器。
请参照图1至8，图1为本发明实施例一的显示面板的制作方法的第一步的第一分步结构示意图。
本实施例的显示面板的制作方法包括：
S101、在玻璃基板上制作透明电极层，对所述透明电极层进行图案化处理，得到主透光部和次透光部；
例如，如图1和2所示，在玻璃基板11上制作整层透明导电层12，对所述透明电极层12进行图案化处理，得到主透光部121和次透光部122。其中为了增大光照电流，所述透明电极12的材料可包括氧化铟锡(ITO，Indium tin oxide)、Ag纳米线以及AZO(铝掺杂的氧化锌)中的至少一种。
S102、在所述主透光部、次透光部和玻璃基板上制作第一金属层，对所述第一金属层进行图案化处理，得到第一栅极部和第二栅极部；
例如，如图3和4所示，在所述主透光部121和次透光部122上制作第一金属层13，对所述第一金属层13进行图案化处理，得到第一栅极部131和第二栅极部132。第一金属层13的材料结构可为Mo/Al、Mo/Cu等。
其中，所述第一栅极部131包覆所述主透光部121，以得到主栅极。为了简化制程工艺，所述第二栅极部132可位于所述次透光部122的两侧，以得到次栅极。其中所述第二栅极部132包括第一部分31和第二部分32，所述第一部分31和第二部分32分别位于所述次透光部122的两侧。与所述次透光部122对应的位置形成所述透光区域。
其中所述主栅极包括第一栅极部131和主透光部121，所述次栅极部包括第二栅极部132和次透光部122，其中与所述次透光部122对应的位置形成透光区域(图中未示出)。
S103、在所述主栅极和所述次栅极上制作栅绝缘层；
例如，如图5所示，在所述主栅极和所述次栅极上沉积栅绝缘层14。栅极绝缘层14的材料可为SiNx、SiOx中的至少一种，也即可为单层或者SiOx/SiNx叠层。
S104、在所述栅绝缘层上制作半导体层，对所述半导体层进行图案化处理得到主有源层和次有源层，所述次有源层的位置与所述透光区域的位置对应；
例如，如图6所示，在所述栅绝缘层14上制作半导体层15，对所述半导体层15进行图案化处理得到主有源层151和次有源层152，所述次有源层152的位置与所述透光区域的位置对应；也即与次透光部的位置对应。
其中，在一实施方式中，所述对所述透明电极层进行图案化处理中所采用的掩膜板与所述对所述半导体层进行图案化处理中所采用的掩膜板相同，进而使得主有源层151的位置可与主透光部121的位置对应，从而节省掩膜板的数量，降低生产成本。
其中所述半导体层15的材料可包括氧化物半导体、非晶硅、多晶硅以及有机物半导体中的至少一种。
S105、在所述主有源层、所述次有源层以及栅绝缘层上制作第二金属层，对所述第二金属层进行图案化处理，得到主源漏极和次源漏极。
例如，如图7所示，在所述主有源层151、所述次有源层152和栅绝缘层14上制作第二金属层16，对所述第二金属层16进行图案化处理，得到主源漏极161和次源漏极162。第二金属层16的材料结构可为Mo/Al或者Mo/Cu叠层。
其中主栅极、主有源层以及主源漏极组成主薄膜晶体管，也即开关薄膜晶体管(左侧的TFT)；次栅极、次有源层以及次源漏极组成次薄膜晶体管(右侧的TFT)，也即相当于传感器。
当对所述次薄膜晶体管的底部进行光照时，产生第一电流；当对所述次薄膜晶体管的顶部进行光照时，产生第二电流，所述第一电流大于所述第二电流。且第一电流大于等于第二电流的5倍。
上述方法还可包括：
S107、在所述主源漏极和所述次源漏极上形成钝化层，所述钝化层上设置有过孔；
如图8所示，在所述主源漏极161和所述次源漏极162上沉积钝化层17，所述钝化层17上设置有过孔(图中未示出)。钝化层17的材料结构可为SiNx、SiOx/SiNx叠层。
S108、在所述钝化层上以及所述过孔内制作像素电极，其中所述像素电极通过所述过孔与主漏极连接。
如图9所示，在所述钝化层17上以及所述过孔内制作沉积透明电极层，然后对其进行图案化处理得到像素电极18，其中所述像素电极18通过所述过孔与主漏极连接。
如图9所示，本实施例还提供一种显示面板，其包括玻璃基板11、主栅极和次栅极、栅绝缘层14、主有源层151和次有源层152、主源漏极161和次源漏极162。
主栅极和次栅极之间间隔设置，且主栅极和次栅极均设于所述玻璃基板11上；在一实施方式中，所述主栅极包括第一栅极部131和主透光部121，其中所述第一栅极部131可包覆所述主透光部121。
所述次栅极包括次透光部122和第二栅极部132，所述次透光部122与所述透光区域的位置对应。结合图4，其中所述第二栅极部132可包括第一部分31和第二部分32，所述第一部分31和第二部分32分别位于所述次透光部122的两侧。当然，所述第二栅极部132也可位于所述次透光部122的一侧。
栅绝缘层14设于所述主栅极、所述次栅极上。
主有源层和次有源层，均设于所述栅绝缘层14上；所述次有源层152的位置与所述透光区域的位置对应；
主源漏极161，设于所述主有源层151和栅绝缘层14上；
次源漏极162，设于所述次有源层152和栅绝缘层14上。
此外还可包括钝化层17和像素电极18。
由于次栅极的部分具有透光区域，且透光区域与次有源层的位置对应，也即该透光区域是采用透明导电层制作得到，因此可以增加了次薄膜晶体管的感光面积，因而增大了光照电流，进而提高触控功能的灵敏性和准确性。
请参照图10，图10为本发明实施例二的显示面板的结构示意图。
当然，如图10所示，在上一实施例的基础上，本实施例的制作方法与上一实施例的区别在于，主栅极的结构与上一实施例不同，具体是将上一实施例的第一步和第二步分别替换为：
S201、在玻璃基板上制作透明电极层，对所述透明电极层进行图案化处理，得到次透光部；
如图10所示，在玻璃基板11上制作透明电极层，对所述透明电极层12进行图案化处理，得到次透光部122。也即在本实施例中，左侧的薄膜晶体管不包括主透光部。也即本步骤中所采用的掩膜板与有源层制作过程中采用的掩膜板不同。
S202、在所述次透光部和玻璃基板上制作第一金属层，对所述第一金属层进行图案化处理，得到主栅极和第二栅极部。
例如，在所述次透光部122上制作第一金属层13，对所述第一金属层13进行图案化处理，得到第一栅极部131和第二栅极部132。第一金属层13的材料结构可为Mo/Al、Mo/Cu等。
其中，所述第一栅极部131形成主栅极。也即所述主栅极不包括主透光部，也即整个主栅极为不透区域。所述次栅极部包括第二栅极部132和次透光部122，其中与所述次透光部122对应的位置形成所述透光区域，换句话讲所述次透光部122与透光区域(图中未示出)的位置对应。
本实施例的显示面板与上一实施例的区别在于：本实施例的所述主栅极为第一栅极部131，也即不包括主透光部。
请参照图11，图11为本发明实施例三的显示面板的结构示意图。
当然，如图11所示，在第一实施例的基础上，本实施例的制作方法与第一实施例的区别在于，整个次栅极都为透光区域，上一实施例的第二步可替换为：
S302、在所述主透光部和次透光部上制作第一金属层，对所述第一金属层进行图案化处理，得到第一栅极部，其中所述主栅极包括第一栅极部和主透光部，所述次栅极为次透光部。
例如，如图11所示，在所述主透光部121和次透光部122上制作第一金属层13，对所述第一金属层13进行图案化处理，得到第一栅极部131，其中所述主栅极包括第一栅极部131和主透光部121，所述次栅极为次透光部122，其中与所述次透光部122对应的位置形成透光区域(图中未示出)。其中次透光部122覆盖次源漏极。也即本实施例的右侧的薄膜晶体管不包括第二栅极部。也即整个次栅极都为透光区域。
本实施例的显示面板与第一实施例的区别在于：本实施例的所述次栅极为次透光部122，也即不包括第二栅极部。
如图12所示，以有源层的材料为非晶硅为例，有源层的厚度为40nm，横坐标表示电压，纵坐标表示电流，其中101、102、103分别表示在底部光照、顶部光照以及无光照情况下的次薄膜晶体管的电流和电压之间的关系图，可见对所述次薄膜晶体管的底部进行光照时产生的电流大于对所述次薄膜晶体管的顶部进行光照时产生的电流。
本发明的显示面板及其制作方法，通过在玻璃基板上制作间隔设置的主栅极和次栅极，其中至少部分所述次栅极具有透光区域；在所述主栅极、所述次栅极以及玻璃基板上制作栅绝缘层；在所述栅绝缘层上制作半导体层，对所述半导体层进行图案化处理得到主有源层和次有源层，所述次有源层的位置与所述透光区域的位置对应；在所述主有源层、所述次有源层以及所述栅绝缘层上制作第二金属层，对所述第二金属层进行图案化处理，得到主源漏极和次源漏极；由于与次有源层对应的栅极为透光区域，因此增加了次薄膜晶体管的感光面积，因而增大了光照电流，进而提高触控功能的灵敏性和准确性。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (6)

1.一种显示面板的制作方法，其特征在于，包括：
在玻璃基板上制作间隔设置的主栅极和次栅极，其中至少部分所述次栅极具有透光区域；
在所述主栅极、所述次栅极以及所述玻璃基板上制作栅绝缘层；
在所述栅绝缘层上制作半导体层，对所述半导体层进行图案化处理得到主有源层和次有源层，所述次有源层的位置与所述透光区域的位置对应；
在所述主有源层、所述次有源层以及所述栅绝缘层上制作第二金属层，对所述第二金属层进行图案化处理，得到主源漏极和次源漏极；
所述在玻璃基板上制作间隔设置的主栅极和次栅极的步骤包括：
在玻璃基板上制作透明电极层，采用掩膜板对所述透明电极层进行图案化处理，得到主透光部和次透光部；在所述主透光部、所述次透光部以及所述玻璃基板上制作第一金属层，对所述第一金属层进行图案化处理，得到第一栅极部和第二栅极部，其中所述主栅极包括第一栅极部和主透光部，所述次栅极包括第二栅极部和次透光部，其中与所述次透光部对应的位置形成所述透光区域；所述次透光部未覆盖所述第二栅极部；所述第一栅极部包覆所述主透光部；
所述在所述栅绝缘层上制作半导体层的步骤包括：
采用同一所述掩膜板在所述栅绝缘层上制作半导体层，所述主透光部与所述主有源层的位置对应，所述次透光部与所述次有源层的位置对应。
2.根据权利要求1所述的显示面板的制作方法，其特征在于，所述第二栅极部包括第一部分和第二部分，所述第一部分和第二部分分别位于所述次透光部的两侧。
3.根据权利要求1所述的显示面板的制作方法，其特征在于，其中次栅极、次有源层以及次源漏极组成次薄膜晶体管；
当对所述次薄膜晶体管的底部进行光照时，产生第一电流；当对所述次薄膜晶体管的顶部进行光照时，产生第二电流，所述第一电流大于所述第二电流。
4.根据权利要求1所述的显示面板的制作方法，其特征在于，所述方法还包括：
在所述主源漏极和所述次源漏极上形成钝化层，所述钝化层上设置有过孔；
在所述钝化层上以及所述过孔内制作像素电极，其中所述像素电极通过所述过孔与主漏极连接。
5.一种显示面板，其特征在于，包括：
玻璃基板；
间隔设置的主栅极和次栅极，均设于所述玻璃基板上；至少所述次栅极的部分具有透光区域；
栅绝缘层，设于所述主栅极、所述次栅极以及所述玻璃基板上；
主有源层和次有源层，均设于所述栅绝缘层上；所述次有源层的位置与所述透光区域的位置对应；
主源漏极，设于所述主有源层和所述栅绝缘层上；
次源漏极，设于所述次有源层和所述栅绝缘层上；
所述主栅极包括与所述主有源层对应的主透光部和第一栅极部，所述第一栅极部包覆所述主透光部；所述次栅极包括与所述次有源层对应的次透光部和第二栅极部，其中与所述次透光部对应的位置形成所述透光区域；所述次透光部未覆盖所述第二栅极部；用于形成所述主透光部和所述次透光部的掩模板与用于形成所述主有源层和所述次有源层的掩模板相同。
6.根据权利要求5所述的显示面板，其特征在于，所述第二栅极部包括第一部分和第二部分，所述第一部分和第二部分分别位于所述次透光部的两侧。
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