WO2014015540A1 - 具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板 - Google Patents

具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列基板 Download PDF

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WO2014015540A1
WO2014015540A1 PCT/CN2012/079903 CN2012079903W WO2014015540A1 WO 2014015540 A1 WO2014015540 A1 WO 2014015540A1 CN 2012079903 W CN2012079903 W CN 2012079903W WO 2014015540 A1 WO2014015540 A1 WO 2014015540A1
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layer
photovoltaic
substrate
conductive
array substrate
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French (fr)
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张鑫狄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US13/698,084 priority Critical patent/US20140026935A1/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13324—Circuits comprising solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of liquid crystal display, and more particularly to a method for fabricating an array substrate having an embedded photovoltaic cell and an array substrate produced thereby. Background technique
  • Liquid crystal display has many advantages such as thin body, power saving, and no radiation, and has been widely used.
  • Most of the liquid crystal display devices on the market are backlight type liquid crystal display devices, which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates, control the liquid crystal molecules to change direction by energizing or not the glass substrate, and refract the light of the backlight module to produce a picture. Since the liquid crystal display panel itself does not emit light, the light source provided by the backlight module is required to display the image normally. Therefore, the backlight module becomes one of the key components of the liquid crystal display device.
  • the backlight module is divided into a side-in type backlight module and a direct-type backlight module according to different incident positions of the light source.
  • a light source such as a CCFL (Cold Cathode Fluorescent Lamp) or an LED (Light Emitting Diode) is disposed behind the liquid crystal display panel, and a surface light source is directly formed and supplied to the liquid crystal display panel.
  • the side-lit backlight module has a backlight LED strip (Light bar) disposed on the edge of the back panel behind the liquid crystal display panel, and the light emitted by the LED strip is from the side of the light guide plate (LGP, Light Guide Plate).
  • the smooth surface enters the light guide plate, is reflected and diffused, and is emitted from the light exit surface of the light guide plate, and then is supplied to the liquid crystal display panel through the optical film group to form a surface light source.
  • the smooth surface enters the light guide plate, is reflected and diffused, and is emitted from the light exit surface of the light guide plate, and then is supplied to the liquid crystal display panel through the optical film group to form a surface light source.
  • only about 6% of the light emitted by the backlight can pass through the liquid crystal display panel, which causes a lot of light energy to be wasted.
  • the liquid crystal display panel comprises a color filter substrate (CF, Color Filter), a color film substrate (TFT, Thin Film Transistor), a liquid crystal (LC, liquid crystal) sandwiched between the color film substrate and the color film substrate, and a sealant frame ( Sealant),
  • the molding process generally includes: front array (Array) process (film, yellow, etching and stripping), middle cell (cell) process (TFT substrate and CF substrate bonding) and rear module assembly Process (drive IC is pressed with printed circuit board).
  • the front Array process mainly forms a TFT substrate to control the movement of liquid crystal molecules;
  • the middle Cell process mainly adds liquid crystal between the TFT substrate and the CF substrate;
  • the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate, displaying images.
  • the first and second metal electrodes of the existing TFT substrate have a certain coverage of the light of the backlight module
  • the block makes the light emitted by the backlight module not fully utilized by the liquid crystal display panel, resulting in loss of light energy.
  • a photovoltaic cell is a device for directly converting light energy into electrical energy by a photoelectric effect or a photochemical effect.
  • a photovoltaic cell In order to improve the light utilization efficiency of a backlight in a liquid crystal display device, a person skilled in the art adds a photovoltaic cell to a liquid crystal display panel. Absorbs excess light energy, converts light energy into electrical energy, supplies power to components or accessories of the liquid crystal display panel, and fully utilizes the light energy emitted by the backlight to save external power consumption.
  • the object of the present invention is to provide a method for fabricating an array substrate with an embedded photovoltaic cell, which first forms a photovoltaic cell on the substrate, and then forms a TFT array on the photovoltaic cell, effectively utilizing the light energy of the backlight to reduce the external Power consumption reduces production costs.
  • Another object of the present invention is to provide an array substrate having an embedded photovoltaic cell, which can effectively utilize the light energy of the backlight, reduce external power consumption, and reduce production cost.
  • the present invention provides a method for fabricating an array substrate having an embedded photovoltaic cell, comprising the following steps:
  • Step 1 Providing a substrate
  • Step 2 forming a transparent conductive layer on the substrate
  • Step 3 forming a conductive enhancement layer on the transparent conductive layer
  • Step 4 forming a photovoltaic layer on the conductive enhancement layer
  • Step 5 forming a metal layer in the photovoltaic layer
  • Step 6 forming an opening on the metal layer, the photovoltaic layer, the conductive enhancement layer, and the transparent conductive layer by a mask process;
  • Step 7 forming a transparent insulating layer on the metal layer
  • Step 8 Form a TFT array on the transparent insulating layer.
  • the substrate is a glass substrate.
  • the transparent conductive layer is an indium tin oxide layer formed on a substrate by a sputtering process.
  • the conductive reinforcing layer is a 3,4-ethylenedioxythiophene monomer polymer layer formed on the transparent conductive layer by coating.
  • the photovoltaic layer is an organic polymer photovoltaic layer, an organic small molecule photovoltaic layer or a P-N junction photovoltaic layer, which is formed on the conductive enhancement layer by coating.
  • the metal layer is an aluminum layer that is formed on the photovoltaic layer by a sputtering process.
  • the reticle process includes an exposure, development, and etching process.
  • the transparent insulating layer is a silicon nitride layer formed on the metal layer by coating.
  • the invention also provides a method for fabricating an array substrate with an embedded photovoltaic cell, comprising the following steps:
  • Step 1 Providing a substrate
  • Step 2 forming a transparent conductive layer on the substrate
  • Step 3 forming a conductive enhancement layer on the transparent conductive layer
  • Step 4 forming a photovoltaic layer on the conductive enhancement layer
  • Step 5 forming a metal layer in the photovoltaic layer
  • Step 6 forming an opening on the metal layer, the photovoltaic layer, the conductive enhancement layer, and the transparent conductive layer by a mask process;
  • Step 7 forming a transparent insulating layer on the metal layer
  • Step 8 forming a TFT array on the transparent insulating layer
  • the substrate is a glass substrate
  • the transparent conductive layer is an indium tin oxide layer formed on a substrate by a sputtering process
  • the conductive reinforcing layer is a 3,4-ethylenedioxythiophene monomer polymer layer, which is formed on the transparent conductive layer by coating;
  • the photovoltaic layer is an organic polymer photovoltaic layer, an organic small molecule photovoltaic layer or a P-N junction photovoltaic layer, which is formed on the conductive enhancement layer by coating;
  • the metal layer is an aluminum layer formed on the photovoltaic layer by a sputtering process; wherein the photomask process includes an exposure, development, and etching process;
  • the transparent insulating layer is a silicon nitride layer formed on the metal layer by coating.
  • the invention also provides an array substrate with an embedded photovoltaic cell, comprising: a substrate, a photovoltaic cell disposed on the substrate, a TFT array disposed on the photovoltaic cell, and a transparent insulating layer disposed between the photovoltaic cell and the TFT array,
  • the photovoltaic cell includes a transparent conductive layer, a conductive enhancement layer formed on the transparent conductive layer, a photovoltaic layer formed on the conductive enhancement layer, and a metal layer formed on the photovoltaic layer.
  • the substrate is a glass substrate; the transparent conductive layer is an indium tin oxide layer; the conductive enhancement layer is a 3,4-ethylenedioxythiophene monomer polymer layer; the photovoltaic layer is an organic polymer photovoltaic layer, An organic small molecule photovoltaic layer or a PN junction photovoltaic layer; the metal layer is an aluminum layer; and the transparent insulating layer is a silicon nitride layer.
  • the present invention has an array substrate for an embedded photovoltaic cell And the array substrate prepared by the method, by forming a photovoltaic cell on the substrate, and forming a TFT array on the photovoltaic cell, the photovoltaic cell is embedded in the array substrate by a simple process, and then the light emitted by the backlight is used as a liquid crystal Display panel components or accessories supply power, making full use of the light energy emitted by the backlight, saving the consumption of external power.
  • FIG. 1 is a flow chart of a method for fabricating an array substrate with an embedded photovoltaic cell according to the present invention
  • FIG. 2 is a schematic structural view of an array substrate with an embedded photovoltaic cell according to the present invention.
  • the present invention provides a method for fabricating an array substrate having an embedded photovoltaic cell, comprising the following steps:
  • Step 1 Providing a substrate which is made of a light transmissive material, usually a glass substrate, a quartz substrate or a substrate of other suitable materials.
  • Step 2 Form a transparent conductive layer on the substrate.
  • the transparent conductive layer is an indium tin oxide (ITO) layer, and the transparent conductive layer is formed on the transparent conductive layer by a sputtering process.
  • ITO indium tin oxide
  • Step 3 Form a conductive enhancement layer on the transparent conductive layer.
  • the conductive enhancement layer is a polymer (PEDOT) layer of 3,4-ethylenedioxythiophene monomer (EDOT) which is formed on the transparent conductive layer by coating to enhance hole conductivity.
  • PEDOT polymer
  • EDOT 3,4-ethylenedioxythiophene monomer
  • Step 4 Form a photovoltaic layer on the conductive enhancement layer.
  • the photovoltaic layer is an organic polymer photovoltaic layer, an organic small molecule photovoltaic layer or a PN junction photovoltaic layer, which is formed on the conductive enhancement layer by coating, for absorbing light energy, and has the embedded photovoltaic cell of the invention.
  • the photovoltaic layer is a fullerene material layer, a fuel sensitizing material layer or polyphenylene Class of material layers.
  • Step 5 Form a metal layer in the photovoltaic layer.
  • the metal layer is an aluminum (A1) layer which is formed on the photovoltaic layer by a sputtering process and is a cathode electrode material of a photovoltaic cell.
  • Step 6 Form an opening on the metal layer, the photovoltaic layer, the conductive enhancement layer, and the transparent conductive layer by a mask process.
  • the opening is a pixel (pixel) opening position, without affecting the aperture ratio of the panel.
  • the photomask process includes an exposure, development, and etching process, and the process can be replaced with a dry engraving process, and the technical effects of the present invention can be achieved as well.
  • Step 7 Form a transparent insulating layer on the metal layer.
  • the transparent insulating layer is a silicon nitride layer, which is formed on the metal layer by coating, insulates the metal layer from the TFT layer, and has the function of planarizing the substrate, thereby reducing the influence of the fabrication of the photovoltaic device on the TFT device array. .
  • Step 8 Form a TFT array on the transparent insulating layer.
  • the TFT array can be implemented by any of the prior art techniques, and the technical effects of the present invention can be implemented.
  • the present invention further provides an array substrate having an embedded photovoltaic cell, comprising: a substrate 20, a photovoltaic cell 40 disposed on the substrate 20, a TFT array 60 disposed on the photovoltaic cell 40, and a photovoltaic cell disposed on the photovoltaic cell A transparent insulating layer 80 between the 40 and the TFT array 60.
  • the photovoltaic cell 40 includes: a transparent conductive layer 42, a conductive enhancement layer 44 formed on the transparent conductive layer 42, a photovoltaic layer 46 formed on the conductive enhancement layer 44, and a metal layer 48 formed on the photovoltaic layer 46.
  • the substrate 20 is a glass substrate;
  • the transparent insulating layer 80 is a silicon nitride layer for insulating and isolating the photovoltaic cell 40 from the TFT array 60.
  • the transparent conductive layer 42 is an indium tin oxide layer; the conductive enhancement layer 44 is a 3,4-ethylenedioxythiophene monomer polymer layer for enhancing hole conductivity; the photovoltaic layer 46 is organically polymerized.
  • the photovoltaic layer, the organic small molecule photovoltaic layer or the PN junction photovoltaic layer is used for absorbing light energy;
  • the metal layer 48 is an aluminum layer and is a cathode electrode material of the photovoltaic cell.
  • the method for fabricating an array substrate of an embedded photovoltaic cell and the array substrate produced thereby, by forming a photovoltaic cell on the substrate, and forming a TFT array on the photovoltaic cell is a simple process
  • the photovoltaic cell is embedded in the array substrate, and the light emitted by the backlight is used to supply power to the liquid crystal display panel component or the accessory, and the light energy emitted by the backlight is fully utilized, thereby saving external power consumption.

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Description

具有嵌入式光伏电池的阵列基板的制作方法及其制得的阵列 H 技术领域
本发明涉及液晶显示领域， 尤其涉及一种具有嵌入式光伏电池的阵列 基板的制作方法及其制得的阵列基板。 背景技术
液晶显示装置（LCD , Liquid Crystal Display )具有机身薄、 省电、 无 辐射等众多优点， 得到了广泛的应用。 现有市场上的液晶显示装置大部分 为背光型液晶显示装置， 其包括液晶显示面板及背光模组 （backlight module ) 。 液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液 晶分子， 通过玻璃基板通电与否来控制液晶分子改变方向， 将背光模组的 光线折射出来产生画面。 由于液晶显示面板本身不发光， 需要借由背光模 组提供的光源来正常显示影像， 因此， 背光模组成为液晶显示装置的关键 组件之一。 背光模组依照光源入射位置的不同分成侧入式背光模组与直下 式背光模组两种。 直下式背光模组是将发光光源例如 CCFL(Cold Cathode Fluorescent Lamp , 阴极萤光灯管)或 LED(Light Emitting Diode , 发光二极 管)设置在液晶显示面板后方， 直接形成面光源提供给液晶显示面板。 而侧 入式背光模组是将背光源 LED灯条（Light bar )设于液晶显示面板侧后方 的背板边缘， LED灯条发出的光线从导光板 ( LGP , Light Guide Plate )一 侧的入光面进入导光板， 经反射和扩散后从导光板出光面射出， 再经由光 学膜片组以形成面光源提供给液晶显示面板。 然而， 背光源发出的光只有 6%左右可以透过液晶显示面板， 这就造成大量光能被浪费。
通常液晶显示面板由彩膜基板 （ CF , Color Filter ) 、 彩膜基板 ( TFT , Thin Film Transistor)、 夹于彩膜基板与彩膜基板之间的液晶 ( LC , Liquid Crystal ) 及密封胶框 （Sealant ) 组成， 其成型工艺一般包 括： 前段阵列 （Array ) 制程 （薄膜、 黄光、 蚀刻及剥膜） 、 中段成盒 ( Cell )制程（TFT基板与 CF基板贴合）及后段模组组装制程（驱动 IC 与印刷电路板压合） 。 其中， 前段 Array制程主要是形成 TFT基板， 以便 于控制液晶分子的运动； 中段 Cell制程主要是在 TFT基板与 CF基板之间 添加液晶； 后段模组组装制程主要是驱动 IC压合与印刷电路板的整合， 进而驱动液晶分子转动， 显示图像。
现有的 TFT基板的第一与第二金属电极， 对背光模组的光有一定的遮 挡， 使得背光模组所发出的光线不能完全被液晶显示面板所利用， 造成了 光能损耗。
光伏电池是通过光电效应或者光化学效应直接把光能转化成电能的装 置， 为了提高液晶显示装置中的背光源的光的利用率， 本领域技术人员在 液晶显示面板中加入光伏电池， 该光伏电池吸收多余的光能， 并将光能转 化为电能， 为液晶显示面板的元件或配件供电， 充分利用背光源所发出的 光能， 节省了对外部电能的消耗。
然而， 现有技术中只是将制作好的光伏电池集成于液晶显示面板中， 制程较为复杂， 生产周期也较长， 进而增加了生产成本。 发明内容
本发明的目的在于提供一种具有嵌入式光伏电池的阵列基板的制作方 法， 其先在基板上形成一光伏电池， 再在该光伏电池上形成 TFT阵列， 有 效利用背光源的光能， 降低外部电能消耗， 降低了生产成本。
本发明的另一目的在于提供一种具有嵌入式光伏电池的阵列基板， 其 能有效利用背光源的光能， 降低外部电能消耗， 降低了生产成本。
为实现上述目的， 本发明提供一种具有嵌入式光伏电池的阵列基板的 制作方法， 包括以下步骤：
步骤 1、 提供基板；
步骤 2、 在基板上形成透明导电层；
步骤 3、 在透明导电层上形成导电增强层；
步骤 4、 在导电增强层上形成光伏层；
步骤 5、 在光伏层形成金属层；
步骤 6、 通过光罩制程在金属层、 光伏层、 导电增强层及透明导电层 上形成开口；
步骤 7、 在金属层上形成透明绝缘层；
步骤 8、 在透明绝缘层上形成 TFT阵列。
所述基板为玻璃基板。
所述透明导电层为氧化铟锡层， 其通过溅射工艺形成于基板上。
所述导电增强层为 3,4-乙撑二氧噻吩单体聚合物层， 其通过涂布方式 形成于透明导电层上。
所述光伏层为有机聚合物光伏层、 有机小分子光伏层或 P-N结型光伏 层， 其通过涂布方式形成于导电增强层上。
所述金属层为铝层， 其通过溅射工艺形成于光伏层上。 所述光罩制程包括曝光、 显影及蚀刻工艺。
所述透明绝缘层为氮化硅层， 其通过涂布方式形成于金属层上。
本发明还提供一种具有嵌入式光伏电池的阵列基板的制作方法， 包括 以下步骤：
步骤 1、 提供基板；
步骤 2、 在基板上形成透明导电层；
步骤 3、 在透明导电层上形成导电增强层；
步骤 4、 在导电增强层上形成光伏层；
步骤 5、 在光伏层形成金属层；
步骤 6、 通过光罩制程在金属层、 光伏层、 导电增强层及透明导电层 上形成开口；
步骤 7、 在金属层上形成透明绝缘层；
步骤 8、 在透明绝缘层上形成 TFT阵列；
其中， 所述基板为玻璃基板；
其中， 所述透明导电层为氧化铟锡层， 其通过溅射工艺形成于基板 上；
其中， 所述导电增强层为 3,4-乙撑二氧噻吩单体聚合物层， 其通过涂 布方式形成于透明导电层上；
其中， 所述光伏层为有机聚合物光伏层、 有机小分子光伏层或 P-N结 型光伏层， 其通过涂布方式形成于导电增强层上；
其中， 所述金属层为铝层， 其通过溅射工艺形成于光伏层上； 其中， 所述光罩制程包括曝光、 显影及蚀刻工艺；
其中， 所述透明绝缘层为氮化硅层， 其通过涂布方式形成于金属层 上。
本发明还提供一种具有嵌入式光伏电池的阵列基板， 包括： 基板、 设 于基板上的光伏电池、 设于光伏电池上的 TFT阵列及设于光伏电池与 TFT 阵列之间的透明绝缘层， 所述光伏电池包括透明导电层、 形成于透明导电 层上的导电增强层、 形成于导电增强层上的光伏层及形成于光伏层上的金 属层。
所述基板为玻璃基板； 所述透明导电层为氧化铟锡层； 所述导电增强 层为 3,4-乙撑二氧噻吩单体聚合物层； 所述光伏层为有机聚合物光伏层、 有机小分子光伏层或 P-N结型光伏层； 所述金属层为铝层； 所述透明绝缘 层为氮化硅层。
本发明的有益效果： 本发明具有嵌入式光伏电池的阵列基板的制作方 法及其制得的阵列基板， 通过在基板上形成一光伏电池， 再在该光伏电池 上形成 TFT阵列， 其以简单的制程将光伏电池嵌入阵列基板中， 进而利用 背光源发出的光线为液晶显示面板元件或配件供电， 充分利用背光源所发 出的光能， 节省了对外部电能的消耗。
为了能更进一步了解本发明的特征以及技术内容， 请参阅以下有关本 发明的详细说明与附图， 然而附图仅提供参考与说明用， 并非用来对本发 明加以限制。 附图说明
下面结合附图， 通过对本发明的具体实施方式详细描述， 将使本发明 的技术方案及其它有益效果显而易见。
附图中，
图 1为本发明具有嵌入式光伏电池的阵列基板的制作方法的流程图； 图 2为本发明具有嵌入式光伏电池的阵列基板的结构示意图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果， 以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 1 , 本发明提供一种具有嵌入式光伏电池的阵列基板的制作 方法， 包括以下步骤：
步骤 1、 提供基板， 该基板由可透光材质构成， 通常为玻璃基板、 石 英基板或其他合适的材料的基板。
步骤 2、 在基板上形成透明导电层。
所述透明导电层为氧化铟锡 （ITO ) 层， 该透明导电层通过溅射 ( Sputtering )制程形成于透明导电层上。
步骤 3、 在透明导电层上形成导电增强层。
所述导电增强层为 3,4-乙撑二氧噻吩单体 （ EDOT ) 的聚合物 ( PEDOT )层， 其通过涂布方式形成于透明导电层上， 用于增强空穴导电 能力。
步骤 4、 在导电增强层上形成光伏层。
所述光伏层为有机聚合物光伏层、 有机小分子光伏层或 P-N结型光伏 层， 其通过涂布方式形成于导电增强层上， 用于吸收光能， 为本发明具有 嵌入式光伏电池的阵列基板的光伏吸收层。
优选的， 所述光伏层为富勒稀类材料层、 燃料敏化类材料层或聚苯烯 类材料层。
步骤 5、 在光伏层形成金属层。
所述金属层为铝 （A1 )层， 其通过溅射（Sputtering )制程形成于所述 光伏层上， 为光伏电池的阴极电极材料。
步骤 6、 通过光罩制程在金属层、 光伏层、 导电增强层及透明导电层 上形成开口。
所述开口为像素 （pixel )开口位置， 进而不影响面板的开口率。
所述光罩制程包括曝光、 显影及蚀刻工艺， 本制程还可以替换成干刻 制程， 同样可以实现本发明的技术效果。
步骤 7、 在金属层上形成透明绝缘层。
所述透明绝缘层为氮化硅层， 其通过涂布方式形成于金属层上， 将金 属层与 TFT层绝缘隔离， 且有平坦化基板的作用， 减少光伏器件的制作对 TFT器件阵列的影响。
步骤 8、 在透明绝缘层上形成 TFT阵列。
所述 TFT 阵列可选用任何一种现有技术， 均可实现本发明的技术效 果， 在此步骤贅述。
请参阅图 2, 本发明还提供一种具有嵌入式光伏电池的阵列基板， 包 括： 基板 20、 设于基板 20上的光伏电池 40、 设于光伏电池 40上的 TFT 阵列 60及设于光伏电池 40与 TFT阵列 60之间的透明绝缘层 80。
所述光伏电池 40包括： 透明导电层 42、 形成于透明导电层 42上的导 电增强层 44、 形成于导电增强层 44上的光伏层 46及形成于光伏层 46上 的金属层 48。
在本实施例中， 所述基板 20为玻璃基板； 所述透明绝缘层 80为氮化 硅层， 用于绝缘隔离光伏电池 40与 TFT阵列 60。
所述透明导电层 42为氧化铟锡层； 所述导电增强层 44为 3,4-乙撑二 氧噻吩单体聚合物层， 用于增强空穴导电能力； 所述光伏层 46 为有机聚 合物光伏层、 有机小分子光伏层或 P-N结型光伏层， 用于吸收光能； 所述 金属层 48为铝层， 为光伏电池的阴极电极材料。
综上所述， 本发明具有嵌入式光伏电池的阵列基板的制作方法及其制 得的阵列基板， 通过在基板上形成一光伏电池， 再在该光伏电池上形成 TFT 阵列， 其以简单的制程将光伏电池嵌入阵列基板中， 进而利用背光源 发出的光线为液晶显示面板元件或配件供电， 充分利用背光源所发出的光 能， 节省了对外部电能的消耗。
以上所述， 对于本领域的普通技术人员来说， 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形 而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

权 利 要 求
1、 一种具有嵌入式光伏电池的阵列基板的制作方法， 包括以下步 骤：
步骤 1、 提供基板；
步骤 2、 在基板上形成透明导电层；
步骤 3、 在透明导电层上形成导电增强层；
步骤 4、 在导电增强层上形成光伏层；
步骤 5、 在光伏层形成金属层；
步骤 6、 通过光罩制程在金属层、 光伏层、 导电增强层及透明导电层 上形成开口；
步骤 7、 在金属层上形成透明绝缘层；
步骤 8、 在透明绝缘层上形成 TFT阵列。
2、 如权利要求 1 所述的具有嵌入式光伏电池的阵列基板的制作方 法， 其中， 所述基板为玻璃基板。
3、 如权利要求 1 所述的具有嵌入式光伏电池的阵列基板的制作方 法， 其中， 所述透明导电层为氧化铟锡层， 其通过溅射工艺形成于基板 上。
4、 如权利要求 1 所述的具有嵌入式光伏电池的阵列基板的制作方 法， 其中， 所述导电增强层为 3,4-乙撑二氧噻吩单体聚合物层， 其通过涂 布方式形成于透明导电层上。
5、 如权利要求 1 所述的具有嵌入式光伏电池的阵列基板的制作方 法， 其中， 所述光伏层为有机聚合物光伏层、 有机小分子光伏层或 P-N结 型光伏层， 其通过涂布方式形成于导电增强层上。
6、 如权利要求 1 所述的具有嵌入式光伏电池的阵列基板的制作方 法， 其中， 所述金属层为铝层， 其通过溅射工艺形成于光伏层上。
7、 如权利要求 1 所述的具有嵌入式光伏电池的阵列基板的制作方 法， 其中， 所述光罩制程包括曝光、 显影及蚀刻工艺。
8、 如权利要求 1 所述的具有嵌入式光伏电池的阵列基板的制作方 法， 其中， 所述透明绝缘层为氮化硅层， 其通过涂布方式形成于金属层 上。
9、 一种具有嵌入式光伏电池的阵列基板的制作方法， 包括以下步 骤： 步骤 1、 提供基板；
步骤 2、 在基板上形成透明导电层；
步骤 3、 在透明导电层上形成导电增强层；
步骤 4、 在导电增强层上形成光伏层；
步骤 5、 在光伏层形成金属层；
步骤 6、 通过光罩制程在金属层、 光伏层、 导电增强层及透明导电层 上形成开口；
步骤 7、 在金属层上形成透明绝缘层；
步骤 8、 在透明绝缘层上形成 TFT阵列；
其中， 所述基板为玻璃基板；
其中， 所述透明导电层为氧化铟锡层， 其通过溅射工艺形成于基板 上；
其中， 所述导电增强层为 3,4-乙撑二氧噻吩单体聚合物层， 其通过涂 布方式形成于透明导电层上；
其中， 所述光伏层为有机聚合物光伏层、 有机小分子光伏层或 P-N结 型光伏层， 其通过涂布方式形成于导电增强层上；
其中， 所述金属层为铝层， 其通过溅射工艺形成于光伏层上； 其中， 所述光罩制程包括曝光、 显影及蚀刻工艺；
其中， 所述透明绝缘层为氮化硅层， 其通过涂布方式形成于金属层 上。
10、 一种具有嵌入式光伏电池的阵列基板， 包括： 基板、 设于基板上 的光伏电池、 设于光伏电池上的 TFT 阵列及设于光伏电池与 TFT 阵列之 间的透明绝缘层， 所述光伏电池包括透明导电层、 形成于透明导电层上的 导电增强层、 形成于导电增强层上的光伏层及形成于光伏层上的金属层。
11、 如权利要求 10 所述的具有嵌入式光伏电池的阵列基板， 其中， 所述基板为玻璃基板； 所述透明导电层为氧化铟锡层； 所述导电增强层为 3,4-乙撑二氧噻吩单体聚合物层； 所述光伏层为有机聚合物光伏层、 有机 小分子光伏层或 P-N结型光伏层； 所述金属层为铝层； 所述透明绝缘层为 氮化硅层。
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