WO2014010825A1

WO2014010825A1 - Silicon refining apparatus

Info

Publication number: WO2014010825A1
Application number: PCT/KR2013/004545
Authority: WO
Inventors: 이진석; 안영수; 장보윤; 김준수
Original assignee: 한국에너지기술연구원
Priority date: 2012-07-10
Filing date: 2013-05-23
Publication date: 2014-01-16
Also published as: KR20140008066A; KR101441856B1

Abstract

Disclosed is a silicon refining apparatus. The present invention provides a silicon refining apparatus for removing volatile impurities, the apparatus comprising: a vacuum chamber which maintains a vacuum atmosphere; one or more electron-guns which are formed in the vacuum chamber and which irradiate an electron beam; a raw material supply section which supplies silicon raw materials to the inside of the vacuum chamber; a silicon melting section which is disposed within the range of the irradiation of the electron beam and in which the silicon raw materials are charged and then melted with the electron beam, thereby forming a silicon melt; a unidirectional solidification section which solidifies the silicon melt supplied from the silicon melting section; a connected pathway section which is formed with a first channel section of the silicon melting section communicated with a second channel section of the unidirectional solidification section, wherein the central axis of the connected pathway section is in a different location from the central axis of an insert hole of the raw material supply section. Consequently, the efficiency of vacuum refining can be improved by extending the travel path of the silicon melt and thereby securing enough time and space for removing volatile impurities which exist therein.

Description

Silicon refining device

The present application relates to a silicon refining apparatus, and more specifically, in performing silicon casting based on an electron-beam melting method, polysilicon which can improve the silicon refining effect by using a one-way solidification technique. A refining apparatus for silicon for ingot production.

According to the recent international trend, solar power generation is widely used as an environmentally friendly power generation method worldwide. Such photovoltaic power generation takes place in a solar cell that serves to convert light energy into electrical energy. Such solar cells consist of small silicon crystals.

The purity of silicon constituting the solar cell is usually expressed as 5N, 6N, 9N. Here, N means the number of 9 in the weight unit, and 5N means 99.999% purity.

For silicon producing ultra high purity semiconductors, the purity reaches 11N. However, the silicon constituting the solar cell is known to be able to obtain a light conversion efficiency similar to the case of having a purity of 11N only by adding a simple gettering process even in the case of a purity of 5 ~ 7N does not require ultra high purity.

In addition, silicon for producing a semiconductor is manufactured through a chemical vapor deposition (CVD) process. However, this silicon manufacturing process is known to generate a large amount of contaminants, low production efficiency, and high production cost.

Accordingly, the metallurgical refining process, which can mass produce high purity silicon at low manufacturing cost, is being actively developed for silicon constituting the solar cell.

The manufacture of polycrystalline silicon ingots for solar cells is basically characterized by directional solidification.

When the silicon particles are charged in the crucible and melted at 1420 ° C. or higher, and the solidification heat of the silicon is removed in a predetermined direction of the lower side of the crucible, the solidification is spread from the lower part of the crucible to the upper direction.

Through the directional solidification process, the separation of the solid-liquid interface is formed to induce impurities toward the liquid phase, and impurities may be collected in the upper direction of the ingot.

Metallurgical refining of high-purity silicon for photovoltaic power generation has been developed such as vacuum refining, oxidation, and unidirectional solidification refining.

Among these metallurgical refining methods, silicon manufacturing technology by metal melting method such as vacuum refining method and unidirectional solidification refining method is easy to control characteristics, and there is little contamination by impurities during operation, and active research is being conducted.

Here, the vacuum refining method generally refers to a refining process of removing impurities having a higher vapor pressure than the silicon from the molten metal after melting the metal raw material, and may remove Al, Ca, Mn, and P, which are representative nonmetal impurities. .

In addition, the unidirectional solidification refining method refers to a refining process in which silicon is segregated with impurities along a solid-liquid interface during phase transition from liquid to solid. Fe, which is a representative metal impurity having a good segregation coefficient, is easily segregated. Ti, Cr, Cu, Ni, etc. can be removed.

On the other hand, in the past, solar cell ingots have been produced once by a batch method, and research has been pursued in the direction of increasing the size of the ingot by such a batch method, but it is difficult to infinitely enlarge the size of the ingots of the solar cell ingot. There was a problem with mass production.

The present application is to solve the problems of the prior art as described above, it is possible to continuously mass-produce the polysilicon ingot for solar cells, to remove volatile impurities that cost less in the refining process to produce silicon having a purity for solar cells To provide a refining device of silicon for.

Further, in melting silicon based on the electron beam melting method, a device for refining silicon for removing volatile impurities that improves silicon refining efficiency by securing a time and space for vacuum purification of volatile impurities in the molten silicon. I would like to.

According to an embodiment of the present invention to solve the above problems, a vacuum chamber for maintaining a vacuum atmosphere, at least one electron gun (gun-gun) for irradiating an electron beam provided in the vacuum chamber, a silicon raw material in the vacuum chamber A raw material supply unit for supplying a material, disposed in a region to which the electron beam is irradiated, the silicon raw material is charged and the silicon raw material is melted by the electron beam to form a silicon melt, supplied from the silicon melt portion The one-way solidification part for solidifying the molten silicon melt and the silicon melt part comprises a connection hot water portion formed by contacting the first channel portion of the silicon melt portion and the second channel portion of the one-way solidification portion, the central axis of the connection molten metal portion is the raw material Of silicon in a position different from the central axis of the inlet of the supply And to provide a device.

In addition, the first virtual line in which the central axis of the connection water passage is extended may be parallel to the second virtual line in which the central axis of the inlet of the raw material supply unit is extended.

In addition, the first virtual line and the second virtual line may be spaced apart maximum in the first silicon melted portion.

The silicon melting portion may have a rectangular parallelepiped shape, and the first virtual line in which the central axis of the connection water flow passage extends may be perpendicular to the second virtual line in which the central axis of the raw material supply portion extends.

In addition, a vertical point of the first virtual line and the second virtual line may be adjacent to a corner portion of the silicon melt portion to the maximum.

In addition, the connection flow passage portion includes a lower surface portion and a pair of side portions extending substantially in the vertical direction at both ends of the lower surface portion, the cross-sectional area of the lower surface portion may be reduced according to the direction in which the molten silicon is transferred.

According to another aspect of the invention, the silicon raw material having a first channel portion at one end, the one-way solidification portion having a second channel portion in contact with the first channel portion to form a connection flow path portion and the silicon raw material in the silicon melt portion And a raw material supply unit for supplying, and the inlet of the raw material supply unit may be disposed above the silicon melting unit such that the path of melting the silicon raw material to the silicon melting unit is supplied to the connection path to the connection channel. Can be.

The silicon melt portion may have a rectangular parallelepiped shape, and the first channel portion may be positioned at an edge portion of the silicon melt portion.

In addition, the inlet of the raw material supply unit may be disposed above the silicon melter such that the straight line connecting the first channel unit and the inlet of the raw material supply unit is the maximum.

In addition, the width of the channel consisting of the first channel portion and the second channel portion may be narrowed in accordance with the direction in which the molten silicon is transferred.

In addition, the silicon melting portion or the one-way solidification portion may have a copper material.

In addition, the silicon melt portion is disposed on the outside, and includes a flow path flows through the fluid, the flow path portion is extended to the first flow path portion and the first flow path portion including a plurality of flow paths formed by a plurality of slits, The flow paths may include a second flow path part connected to each other to form one flow path.

The one-way solidification part may include a first cooling channel part and a second cooling channel part through which a fluid provided at an outside flows, and the flow rate of the fluid flowing in the first cooling channel part is greater than the flow rate of the fluid flowing in the second cooling channel part. There can be many.

According to another aspect of the present invention, a first silicon melted portion in which silicon melt is stored, the first silicon melted portion has a first channel portion, and a second channel portion in contact with the first channel portion to form a first connection flow passage portion. The second silicon melted portion and the second silicon melted portion has a third channel portion, and includes a one-way solidification portion having a fourth channel portion in contact with the third channel portion to form a second connection hot water passage, The furnace unit may be provided with a silicon refining apparatus disposed so that the path of the silicon molten metal to the second connection molten metal is the maximum.

The second silicon melt portion may have a rectangular parallelepiped shape, and the third channel portion may be positioned at an edge portion of the second silicon melt portion.

In addition, the second channel portion may be disposed above the second silicon melted portion such that a straight line connecting the second channel portion and the third channel portion is the maximum.

In addition, the inlet of the raw material supply unit may be disposed so as to maximize the path that is melted at the position where the silicon raw material is supplied to the first silicon melting unit to move to the first connection water heater.

The first silicon melt portion may have a rectangular parallelepiped shape, and the first channel portion may be positioned at an edge portion of the first silicon melt portion.

The first connection channel may include a channel consisting of the first channel part and the second channel part, or the second connection channel part may include a width of a channel including the third channel part and the fourth channel part of the one-way solidification part. It can be narrowed down according to the direction in which the molten silicon is transferred.

In addition, the silicon melt part may include respective flow path parts disposed at each outer side, and the flow path parts disposed at the adjacent outer sides may be spatially connected to each other through the inside of the silicon melt part.

The silicon melting part may have a plurality of flow path parts disposed outside, and a flow path width of at least one flow path part of the plurality of flow path parts may be greater than a flow path width of the remaining flow path parts.

The one-way solidification part may have a plurality of cooling flow path parts disposed outside, and a flow path width of at least one cooling flow path part of the plurality of cooling flow path parts may be larger than the remaining flow path width.

According to the present invention to solve the above problems has the following effects.

First, volatile impurities in the molten silicon can be removed by supplying the silicon raw material to the silicon melt and irradiating an electron beam to melt the silicon first and lengthen the moving path of the molten silicon before the molten silicon is supplied to the one-way solidification part. This can increase the time and space available to improve the vacuum refining effect.

Second, since the silicon refining effect of the molten silicon is increased in the silicon melt, it is not necessary to remove volatile impurities in the silicon through a separate device or a chemical method, and thus polysilicon ingots can be continuously produced in large quantities. The manufacturing cost can be reduced.

Third, by lengthening the path for plural silicon melt parts and the molten silicon to move the plurality of silicon melt parts, time and space for removing volatile impurities from the silicon melt are increased, thereby further improving the refining effect.

1 is a view schematically showing a refining apparatus of silicon according to an embodiment of the present invention.

2 is a view schematically showing a refining apparatus of silicon according to another embodiment of the present invention.

Figure 3 is a perspective view schematically showing a silicon melt in accordance with an embodiment of the present invention.

4 is a view illustrating the outside of FIG. 3.

5 is a perspective view illustrating a state in which a fluid supply unit is disposed in a silicon melting unit according to an exemplary embodiment of the present invention.

FIG. 6 is a view illustrating a state seen from above and one side of FIG. 5.

7 is a perspective view schematically showing a second silicon melt according to another embodiment of the present invention.

FIG. 8 is a view illustrating the outside of FIG. 7.

FIG. 9 is a diagram illustrating a cut plane taken along a line A-A of FIG. 7.

10 is a perspective view illustrating a state in which a fluid supply unit is disposed in a silicon melting unit according to another exemplary embodiment of the present invention.

FIG. 11 is a view showing a view of FIG. 9 and a view from the outside.

12 is a perspective view schematically showing the outer side of the one-side solidification unit according to an embodiment of the present invention.

FIG. 13 is a cross-sectional view of FIG. 12.

14 is a cross-sectional view schematically showing a one-way solidification unit according to an embodiment of the present invention.

FIG. 15 is a view illustrating a state in which a fluid supply unit is disposed in a one-way solidification unit. FIG.

FIG. 16 is a view showing two types of connection baths each having a different shape.

FIG. 17 is a sectional view of the silicon molten metal held in the two kinds of connection furnaces shown in FIG.

FIG. 18 is a table showing experimental results qualitatively showing the thicknesses of the molten silicon held in the two kinds of connection furnaces shown in FIG. 16.

19 is a view showing a connection hot water unit according to another embodiment of the present invention.

20 is a cross-sectional view showing a connection hot water unit according to another embodiment of the present invention.

FIG. 21 is a diagram illustrating an arrangement of a raw material supply part and a connection hot water supply part of FIG. 1.

Fig. 22 is a view showing the arrangement of a raw material supply part and a connection hot water supply part applied to a refining apparatus of silicon according to another aspect of the present invention.

FIG. 23 is a view showing the arrangement of a raw material supply part and a connection hot water supply part applied to a refining apparatus of silicon according to another aspect of the present invention. FIG.

FIG. 24 is a view schematically illustrating a disposition of a raw material supply unit, a first connection furnace and a second connection furnace, and a movement path of the silicon molten metal applied to a refining apparatus of silicon according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the accompanying drawings are only described in order to more easily disclose the contents of the present invention, but the scope of the present invention is not limited to the scope of the accompanying drawings that will be readily available to those of ordinary skill in the art. You will know.

In addition, in describing the embodiments of the present invention, the same name and the same reference numerals are used for components having the same function, and it is revealed that they are not substantially the same as the conventional polysilicon manufacturing apparatus.

Also, the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Referring to FIG. 1, the silicon refining apparatus includes a vacuum chamber 100, an electron gun 200, a silicon melting part 300, and a one-way solidification part 400.

The vacuum chamber 100 maintains a vacuum atmosphere therein to allow impurities to evaporate in the molten silicon, which will be described later. The pressure inside the vacuum chamber 100 may be approximately 10-5 torr.

On the upper end of the vacuum chamber 100, a raw material input part 120 through which a silicon raw material in the form of particles may be supplied is installed.

The inside of the raw material input part 120 may be provided with a cooling water passage to prevent damage by heat by the electron beam to be described later.

In addition, the raw material input unit 120 may include a raw material supply line 122 and the raw material supply unit inlet 124, the raw material supply unit inlet 124 is a silicon raw material in the silicon melting unit 300 to be described later The position and angle at which the material is supplied can be adjusted.

Electron-gun 200 is installed in the vacuum chamber 100, it may be a plurality.

The electron gun 200 according to the present embodiment includes a first electron gun 210 and a second electron gun 220.

The first electron gun 210 is installed on the upper end of the vacuum chamber 100 so that the electron beam is irradiated into the vacuum chamber 100.

The silicon melter 300 is disposed in a region where the electron beam is irradiated by the first electron gun 210. In the silicon melting part 300, the silicon raw material in the form of particles is charged from the raw material input part 120, and the loaded silicon raw material is melted by the electron beam accelerated and integrated by the first electron gun 210. It is formed of the molten silicon (P2).

Meanwhile, the first electron gun 210 may accelerate and integrate the first electron beam to have an output energy of 30 to 35 kWh / cm 2.

However, the present invention is not limited thereto, and the first electron gun 210 may have an output energy for preventing the silicon melt from being unstable, such as the silicon melt splashing to the outside by an electron beam.

In addition, the silicon melter 300 preferably has a copper material in order to block inflow of impurities that may occur due to the material of the silicon melter itself. In addition, the silicon melt part 300 having a copper material may include a flow path part which can easily control the cooling efficiency in order to prevent damage by the electron beam. A detailed description of the silicon melt part including the flow path part will be described later.

The one-way coagulation part 400 is disposed in an area where the second electron beam is irradiated by the second electron gun 220, and is adjacent to the silicon melting part 300.

In addition, the one-way solidification unit 400 may have a copper material similarly to the silicon melting part 300.

The one-way solidification unit 400 may continuously cast the molten silicon P2 and at the same time induce segregation of metal impurities to improve silicon refining and high-purity polysilicon production efficiency.

The second electron gun 220 may accelerate and integrate the second electron beam to have an output energy of 8 to 14 kWh / cm 2.

However, the present invention is not limited thereto, and the second electron gun 210 maintains a molten state in the second electron beam and prevents the silicon melt from being unstable, such as splashing out of the silicon melt by an electron beam. Can have energy.

The connection bath 500 may be formed by contacting the first channel part 301 of the silicon melting part 300 and the second channel part 401 of the one-way solidification part 400 to each other. The unit 500 provides a channel through which the molten silicon may be supplied from the silicon melter 300 to the one-way solidifier 400.

The connection flow passage part 500 includes a lower surface portion 501 and a pair of side portions 502 extending in a substantially vertical direction at both ends of the lower surface portion 501.

Accordingly, the silicon molten metal stored in the silicon melting part 300 is supplied to the one-way solidification part 400 through the connection hot water supply part 500 as much as the silicon raw material is supplied through the raw material supply part 122. Can be.

In addition, the distance of the side surface portion 502 facing each other in the upper direction from the lower surface portion 501, the connection hot water passage 500 may be widened. Accordingly, the electron beam may be irradiated onto the molten silicon flowing along the connection bath 500, thereby improving the silicon refining effect and reducing the area where the electron beam is irradiated to the peripheral portion of the connection bath 500. Durability of the connection passage 500 may be improved.

A detailed description of the connection water heater 500 will be described later with reference to the accompanying drawings.

As shown, since the refining apparatus of silicon according to another embodiment of the present invention is similar to the embodiment of the present invention described above, a description of the configuration having the same function according to it will be omitted.

Unlike the exemplary embodiment of the present invention, the silicon melt part includes a first silicon melt part 310 and a second silicon melt part 320.

The first silicon melter 310 is disposed in a region where the electron beam is irradiated, and the silicon raw material is charged to melt the silicon raw material by the electron beam to form a silicon melt.

In addition, the first silicon melt part 310 has a first channel part 311 and has a rectangular parallelepiped shape.

The second silicon melter 320 has a second channel portion 321 in contact with the first channel portion 311, and has a rectangular parallelepiped shape.

The first connection channel part 510 is formed by contacting the first channel part 311 and the second channel part 321, and the molten silicon is melted by the first silicon melt part 310 in the second silicon melt part 310. It provides a passageway to the portion 320.

The one-way solidification unit 400 may solidify the silicon melt supplied from the second silicon melter 320 and provide a space in which the polysilicon ingot is formed.

In addition, the second silicon melter 320 has a third channel portion 322, and the one-way solidification portion 400 has a fourth channel portion 402.

The second connection furnace 520 is formed by the third channel portion 322 and the fourth channel portion 402 contact with each other, the silicon melt is the one-way solidification portion in the second silicon melt portion 320 Provide a passageway to 400.

FIG. 3 is a perspective view schematically illustrating a silicon melt part according to an embodiment of the present invention, and FIG. 4 is a view illustrating the outside of FIG. 3.

3 and 4, a silicon melter applied to a refining apparatus of silicon according to an embodiment of the present invention will be described.

The silicon melt part 300 is disposed outside the silicon melt part 300 and includes a flow path part 340 through which a fluid flows.

The flow path part 340 includes a first flow path part 341 and a second flow path part 342.

The first flow path part 341 may have a plurality of flow paths formed by a plurality of slits.

That is, the first flow path part 341 having the plurality of slits serves to increase the surface area of the outside of the silicon melt part 300.

Accordingly, when the cooling fluid flows through the first flow path part 341, the area in contact with the outside of the silicon melting part 300 increases in the cooling fluid, thereby improving cooling efficiency.

In addition, when the silicon melt part 300 is exposed by an electron beam for a long time, it may prevent breakage due to heat.

The second flow path part 342 extends to the first flow path part 341, and the plurality of flow paths are connected to each other to form one flow path.

Cutting may be performed to have the first flow path part 341 and the second flow path part 342 outside the silicon melt part 300.

The second flow path part 342 has a structure extending from the first flow path part 341 and connected to each other, so that the outside of the silicon melt part 300 extends only to the first flow path part 341. There is no need to form the cutting process can be easy.

Meanwhile, the silicon melt part 300 has a channel part 360 that provides a channel through which the silicon melt can move.

The second flow path part 342 may be disposed closer to the channel part 360 than the first flow path part 341.

In addition, the second flow path part 342 is connected to the first flow path part 341 to form one flow path, so that the width of the flow path of the second flow path part 342 is increased.

In addition, the silicon melting part according to another aspect of the present invention includes a first flow path portion 341 and the second flow path portion 342, the flow rate flowing through the second flow path portion 342 is the first flow path portion 341 May be greater than the flow rate.

Accordingly, the second flow path part 342 may effectively remove heat around the channel part 360 by increasing the cooling rate of the cooling fluid.

Meanwhile, the silicon melt part 300 applied to the silicon refining apparatus according to another aspect of the present invention may have a plurality of flow path parts 340 disposed outside.

The flow path width of at least one flow path part 342 of the plurality of flow path parts 340 may be larger than the flow path width of the remaining flow path parts 341.

In addition, the at least one flow path part 343 may be disposed around the channel part 360 of the silicon melt part 300. Therefore, by having a structure in which the flow path width of the at least one flow path portion 343 is large, the cooling speed of the cooling fluid may be increased to effectively remove heat around the channel portion 360.

Accordingly, the channel width of the at least one flow path portion 343 is disposed around the channel portion 360, so that the channel portion 360 of the silicon melt portion 300, to which the electron beam can be directly irradiated, is heated. Can be prevented from being damaged.

FIG. 5 is a perspective view illustrating a state in which a fluid supply unit is disposed in a silicon melting unit according to an embodiment of the present invention, and FIG. 6 is a view illustrating a state seen from above and one side of FIG.

5 and 6 will be described where the fluid is supplied to the flow path unit.

The apparatus may further include a fluid supply part 370 supplying a fluid to the flow path part.

The fluid supply part 370 may be installed outside the silicon melt part 300 and supply fluid to the second flow path part 342.

The silicon melt part 300 applied to the refining apparatus of silicon according to another aspect of the present invention includes respective flow path parts 340 disposed on each outer side, and the flow path parts disposed on the adjacent outer sides are melted on the silicon. It may penetrate the interior of the unit 300 and be spatially connected to each other.

In addition, a region penetrating between the flow path parts 340 may be an edge part of the silicon melt part 300.

On the other hand, the fluid supply unit 370 for supplying the cooling fluid may be installed on each outside of the silicon melt portion 300, respectively, disposed on each outside of the silicon melt portion 300 according to another aspect of the present invention The flow path part 340 may be spatially connected to have a structure capable of cooling the silicon melt part 300 through one fluid supply part 370.

Accordingly, it is easy to control the supply amount of the cooling fluid through the fluid supply unit 370, and the structure for cooling the silicon melter 300 can be simplified and easy to maintain and manage.

FIG. 7 is a perspective view schematically illustrating a second silicon melter according to another exemplary embodiment of the present invention, and FIG. 8 is a view illustrating the outside of FIG. 7.

7 and 8, a flow path part disposed in a silicon melting part applied to a refining apparatus of silicon according to another aspect of the present invention will be described.

As described above, the silicon melter 300 includes the first silicon melter 310 and the second silicon melter 320.

Since the second silicon melter 320 shown in FIG. 7 includes a first connection funnel 510 and a second connection funnel 520, the second silicon melter 320 may be disposed outside the second silicon melter 320. The outer structure including the first connection water heater 510 is different from the silicon melt part 300, but the first flow path part 341 and the first flow path part 341 forming a plurality of flow paths. ) Is connected to the second flow path portion 342 is similar in structure.

FIG. 9 is a diagram illustrating a cut plane taken along a line A-A of FIG. 7.

Referring to FIG. 9, a second flow path part larger than a flow path width of the first flow path part 341 around the second channel part 321 or the third channel part 322 of the second silicon melt part 320. 344 may be disposed.

Accordingly, when the cooling fluid is supplied to the second flow path part 344, the periphery of the second channel part 321 or the third channel part 322 may be rapidly cooled.

FIG. 10 is a perspective view illustrating a state in which a fluid supply unit is disposed in a silicon melting unit according to another exemplary embodiment of the present invention, and FIG. 11 is a view illustrating a state of FIG.

As shown in FIG. 11, the fluid supply unit 351 may be disposed on an upper edge portion where the first connection channel part 510 and the second connection channel part 520 are not disposed.

The cooling fluid supplied to the fluid supply part 370 may flow along the flow path part 340 at the outside of the second silicon melt part 320 to increase the cooling efficiency for a long time.

In addition, when all of the supplied outside of the second silicon melt part 320 flows through the cooling fluid, an edge portion of the second silicon melt part 320 passes through an area penetrating between the flow path parts to an adjacent outer flow path part. Will move.

The cooling fluid passes through all of the flow path portion 340 of the peripheral portion 360 of the silicon melt portion, and then passes through the flow path portion provided on the lower surface portion of the silicon melt portion, and then the cooling fluid passes through the fluid discharge portion 380 to the outside. May be discharged.

Referring to FIG. 6 again, the positions of the first flow path part and the second flow path part according to another aspect of the present invention will be described in more detail.

The silicon melter 300 includes a central portion 361 forming a storage space of the molten silicon, a peripheral portion 362 partitioning the central portion 361, and a channel portion 360 formed on the peripheral portion 362. do.

The first flow path part 341 may be disposed to correspond to the central portion 361 of the silicon melt part 300.

The second flow path part 342 may be disposed to correspond to the peripheral part 362 of the silicon melt part 300.

In addition, the second flow path part 343 may be disposed adjacent to the channel part 360.

12 is a perspective view schematically showing the outer side of the one-way solidification unit according to an embodiment of the present invention, FIG. 13 is a cross-sectional view of FIG. 12, and FIG. 14 is a cross-sectional view schematically showing the one-way solidification unit according to an embodiment of the present invention. .

One-way solidification unit 400 according to an embodiment of the present invention may have a plurality of cooling passage 440 disposed on the outside.

The one-way solidification part 400 has a plurality of cooling flow path parts 440 to increase the surface area of the outer side of the one-way solidification part 400 to improve long-term cooling efficiency in the continuous refining process of silicon. You can.

The plurality of cooling channel parts 440 are formed by a plurality of slits on the outside of the one-way solidification part 400, and the flow path of at least one cooling channel part 450 of the plurality of cooling channel parts 440. The width may be greater than the remaining flow path width.

In addition, the at least one cooling channel portion 450 may be disposed on the outer upper portion of the one-way solidification portion.

According to another aspect of the present invention, the one-way solidification unit 400 includes a first cooling channel portion 450 and a second cooling channel portion 440 through which a fluid installed on the outside flows, and the first cooling channel portion ( The flow rate of the fluid flowing through the 450 may be greater than the flow rate of the fluid flowing in the second cooling channel 440.

In addition, the first cooling channel part 450 may be disposed on an outer upper portion of the one-way solidification part 400.

Accordingly, the first cooling channel portion 450 is disposed above the one-side solidification portion 400 where the electron beam may be directly exposed, thereby cooling more fluid than the second cooling channel portion 440. It can flow to the flow path portion 450 can improve the cooling rate of the outer upper portion of the one-way solidification portion 400.

The one-way solidification unit 400 has a center of the first cooling fluid supply unit 471 and the one-way solidification unit 400 connected to the upper cooling flow path 440 based on the center of the one-way solidification unit 400. It may further include a second cooling fluid supply unit 472 connected to the cooling channel 440 of the lower side as a reference.

Although not shown in the drawing, the first cooling fluid supply unit 471 and the second cooling fluid supply unit 472 may be controlled by one cooler.

Accordingly, by controlling the fluid supplied to the first cooling fluid supply unit 471 and the second cooling fluid supply unit 472 through the one cooler, it is possible to reduce the installation and maintenance costs.

Meanwhile, the fluid supplied to the first cooling fluid supply unit 471 and the second cooling fluid supply unit 472 may control the flow rate of the fluid by a plurality of coolers.

Accordingly, by separately controlling the flow rates of the fluid supplied to the first cooling fluid supply unit 471 and the second cooling fluid supply unit 472, the upper cooling channel portion 440 and the lower cooling channel portion The temperature of the fluid of 440 is individually controlled to increase the cooling efficiency.

As such, the one-way solidification part 400 is supplied with fluid through each of the first cooling fluid supply part 471 and the second cooling fluid supply part 472, thereby reducing the time and the path through which the fluid is supplied and discharged. Cooling efficiency can be improved.

Although not shown in the drawing, the one-way solidification unit 400 may include a third cooling fluid supply unit capable of cooling the graphite dummy bar installed in the one-way solidification unit 400.

With reference to Figures 16 to 18 will be described in more detail the hot water supply.

The lower surface portion of the connection water flow passage 500a shown in FIG. 16A is flat, and the side portions facing each other are parallel.

That is, the cross section of the lower surface portion of the connection hot water flow part 500a is constant along the direction in which the molten silicon is transferred from the silicon melt part 300 to the one-way solidification part 400.

Connection (b) 500b according to an aspect of the present invention shown in Figure 16 (b) is the direction in which the molten silicon (P2) is transferred from the silicon melt portion 300 to the one-way solidification portion 400 As a result, the cross-sectional area of the lower surface portion is reduced.

In addition, the width of the channel of the connection hot water pipe portion 500b according to another aspect of the present invention may be narrowed according to the direction in which the molten silicon is transferred.

As described above, the connection hot water flow part 500b according to an aspect of the present invention is not limited to a shape in which the cross-sectional area of the bottom surface is reduced, and the width of the channel of the connection hot water flow part 500b is a direction in which the silicon melt is transferred. By being narrowed according to, it is possible to secure the time that the silicon melt can be present in the connection bath (500b).

In addition, the lower surface portion of the connection passage 500b is flat.

That is, FIG. 17 is a view showing an experimental result for comparing the thicknesses of the molten silicon held in the two types of connection furnaces shown in FIG. 16 using the silicon refiner according to an aspect of the present invention.

FIG. 17A is a view showing a cross section of the connection water flow passage part shown in FIG. 16A. As shown in (a) of FIG. 17, it can be seen that the amount of the molten silicon decreases according to the conveying direction.

FIG. 17B is a view showing a cross section of the connection water passage according to FIG. 16B. As shown in (b) of FIG. 17, it can be seen that the amount of the molten silicon is relatively uniform according to the conveying direction.

FIG. 18 is an experimental result table quantitatively showing the thicknesses of the molten silicon held in the two kinds of connection furnaces shown in FIG. 16.

Comparing the experimental results for the two types of connection hot water flow shown in Figure 18, the average value of the thickness of the molten silicon held in the connection hot water flow passage 500b according to an aspect of the present invention is the largest, It can be seen that the thickness of the molten metal of silicon covering the lower surface portion of the connection hot water flow part 500b along the direction supplied from the silicon melt part 300 to the one-way solidification part 400 is the most uniform.

According to an aspect of the present invention, the connection hot water supply part 500b illustrated in FIG. 15B may maintain a predetermined amount of silicon molten metal on the connection hot water supply part 500b so that an electron beam is connected to the connection hot water supply part 500b. It is possible to prevent the direct injection into the 500b to prevent the upper end portions of the silicon melt portion and the one-way solidification portion from being damaged.

That is, the structure of the connection bath 500b shown in FIG. 16 (b) may continuously refine silicon by improving durability of the refining apparatus in order to manufacture ingots of polysilicon.

19, the inclination of one surface of the lower surface part is based on a horizontal direction according to a direction in which the molten silicon is transferred from the silicon melting part 300 to the one-way solidification part 400. It may have an increasing shape.

Accordingly, when the silicon melt is transferred from the silicon melt part 300 to the one-way solidification part 400, the silicon melt may be maintained in the connection bath 500c shown in FIG. 19.

According to another exemplary embodiment of the present invention, the connection hot water dropping part 500c maintains a predetermined amount of the molten silicon on the connection hot water dropping part 500c, so that the electron beam is directly injected into the connection hot water dropping part 500c. It is possible to prevent the upper end portions of the silicon melt portion and the one-way solidification portion from being damaged.

On the other hand, according to another embodiment of the present invention may have a shape in which the lower surface portion of the connection flow passage portion is small in cross section in the direction in which the molten silicon is transferred, and at the same time the slope of one surface of the lower surface portion increases.

Accordingly, even when the transfer amount of the molten silicon is small, the molten silicon may be maintained in the connection hot water supply part, thereby preventing the connection hot water part from being damaged by the electron beam.

Referring to FIG. 20, unlike the exemplary embodiment of the present disclosure, the lower surface portion of the connection tap 530 applied to the refining apparatus of silicon may have a curved portion 560 having a constant curvature.

Accordingly, the silicon melt may be prevented from being smoothly supplied from the silicon melter 300 to the one-way solidification part 400 due to the surface tension of the silicon melt.

With reference to Figure 21 will be described the arrangement of the raw material supply unit and the connection hot water applied to the refining apparatus according to an embodiment of the present invention.

The silicon raw material is supplied to the silicon melter 300 from the raw material supply part 120. The silicon raw material supplied to the silicon melter 300 is melted by the first electron gun 210 shown in FIG. 1 to form silicon melt.

Non-metallic impurities present in the silicon melt also melt to reach a volatile state. Volatile impurities have a higher vapor pressure than silicon and can be removed by vacuum refining.

The central axis of the connection hot water supply unit 500 may be at a position different from the central axis of the inlet 124 of the raw material supply unit.

The silicon melt may move through various movement paths in the silicon melt part 300. However, since the molten silicon may move in a straight path when the central axis of the connection furnace 500 is the same as the central axis of the inlet 124 of the raw material supply part, the arrangement of the molten silicon may not sufficiently secure the refining time. You may not be able to.

The first virtual line L1 extending from the center axis of the connection water heater 500 may be substantially parallel to the second virtual line L2 from which the center axis of the inlet 124 of the raw material supply part extends. .

In addition, the first virtual line L1 and the second virtual line L2 may be spaced apart from each other in the first silicon melting part 300 to the maximum.

That is, the first virtual line L1 extending from the central axis of the connection water flow passage 500 is substantially parallel to the second virtual line L2 from which the central axis of the inlet 124 of the raw material supply part extends. The first imaginary line L1 and the second imaginary line L2 are inserted into the connection hot water supply unit 500 and the raw material supply unit 124 so as to be spaced apart in the first silicon melting unit 300 to the maximum. ) May be arranged.

The arrangement of the connection furnace 500 and the inlet 124 of the raw material supply unit may be a long path for the silicon molten metal to move in the silicon melt 300, the volatile impurities present in the silicon melt It is possible to secure the time and space for vacuum refining, thereby improving the refining efficiency of silicon.

The silicon melt part 300 may have a rectangular parallelepiped shape. However, the shape that can store the molten silicon can be applied without being limited to the rectangular parallelepiped shape.

The first virtual line L1 extending from the central axis of the connection water heater may be substantially perpendicular to the second virtual line L2 from which the central axis of the inlet 124 of the raw material supply part extends.

That is, the first imaginary line L1 extending from the center axis of the connection water supply unit is substantially perpendicular to the second imaginary line L2 from which the center axis of the inlet 124 of the raw material supply unit extends. The unit 501 and the inlet 124 of the raw material supply unit may be disposed.

The arrangement of the connection hot water 501 and the inlet 124 of the raw material supply unit may be a long path for the silicon melt to move in the silicon melt 300, the volatile impurities present in the silicon melt It is possible to secure the time and space for vacuum refining, thereby improving the refining efficiency of silicon.

The first channel part 301 may be located at an edge portion of the silicon melting part 300.

The inlet 124 of the raw material supply part is melted at the position where the silicon raw material is supplied to the silicon melt part 300, and the silicon melt part 300 is maximized so that the path of the raw material supply part is moved to the connection hot water supply part 501. ) May be disposed above.

In addition, the inlet 124 of the raw material supply part is disposed above the silicon melting part 300 such that the straight line L3 connecting the first channel part 301 and the inlet 124 of the raw material supply part is the maximum. Can be.

Therefore, the inlet 124 of the raw material supply part and the first channel part 301 may have a configuration spaced most maximally in the silicon melting part 300.

The inlet 124 of the raw material supply part is disposed above the silicon melting part 300 so that the straight line L3 has a maximum length, so that the silicon melt may exist in the silicon melting part 300. And space can be secured to improve the refining efficiency of silicon.

In addition, the polysilicon ingot can be continuously manufactured using the silicon refining apparatus according to the present embodiment, and manufacturing cost can be reduced.

With reference to FIG. 24, the arrangement of the raw material supply unit, the first connection water heater and the second connection water heater according to another embodiment of the present invention shown in FIG. 2 will be described in more detail.

The third channel part 322 may be located at an edge portion of the second silicon melting part 320.

The first connection hot water supply unit 510 may be disposed such that a path through which the silicon molten metal moves to the second connection hot water supply unit 520 is maximized.

In addition, the second channel part 321 is disposed on the upper portion of the second silicon melting part 320 such that a straight line L3 connecting the second channel part 321 and the third channel part 322 is maximized. Can be arranged.

In the arrangement of the first connection furnace 510 and the second connection furnace 520, a path through which the silicon melt moves in the second silicon melter 200 may be long, and the silicon melt It is possible to secure the time and space for the volatile impurities present in the vacuum refining can improve the refining efficiency of silicon.

Meanwhile, the first channel part 311 may be located at an edge portion of the first silicon melt part 300.

The inlet 124 of the raw material supply unit may be disposed to maximize the path of melting at the position where the silicon raw material is supplied to the first silicon melting unit 310 and moving to the first connection hot water unit 510. have.

The inlet 124 of the raw material supply part is disposed above the first silicon melting part 310 such that a straight line L4 connecting the first channel part 311 and the inlet 124 of the raw material supply part is the maximum. Can be.

As described above, the silicon refining apparatus for manufacturing a polysilicon ingot according to another embodiment of the present invention has a plurality of silicon melt parts and a silicon melt when the silicon melt moves through a first connection furnace 510 connecting the plurality of silicon melt parts. It can be seen that the moving path of the maximum in the first silicon melt portion 310 and the second silicon melt portion 320 as shown by the arrow shown.

Through the arrangement of the raw material supply unit 120, the first connection furnace 510 and the second connection furnace 520 it is possible to ensure a sufficient time and space to remove the volatile impurities in the molten silicon The silicon refining effect can be improved.

In addition, unlike producing the polysilicon ingot according to the prior art once in a batch method, the polysilicon ingot can be continuously manufactured using the silicon refining apparatus according to the present embodiment, and the manufacturing cost can be reduced. .

The invention is not limited to the embodiments described above, but is defined by the claims, and it is understood that those skilled in the art can make various modifications and adaptations within the scope of the claims. Self-explanatory

Claims

A vacuum chamber for maintaining a vacuum atmosphere;

At least one electron gun provided in the vacuum chamber to irradiate an electron beam;

A raw material supply unit supplying a silicon raw material to the vacuum chamber;

A silicon melting part disposed in a region where the electron beam is irradiated, wherein the silicon raw material is charged and the silicon raw material is melted by the electron beam to form a silicon melt;

A one-way solidifying unit for solidifying the silicon melt supplied from the silicon melting unit; And

A first hot water channel part of the silicon melting part and a second channel part of the one-way solidification part including a connection hot water part formed in contact with each other,

And the central axis of the connection hot water passage is different from the central axis of the inlet of the raw material supply unit.
The method of claim 1,

And a first virtual line in which the central axis of the connection hot water passage is extended is parallel to a second virtual line in which the central axis of the inlet of the raw material supply unit extends.
The method of claim 2,

And the first virtual line and the second virtual line are spaced apart at the maximum in the first silicon melted portion.
The method of claim 1,

The silicon melt has a rectangular parallelepiped shape,

And a first virtual line in which the central axis of the connection water passage is extended is perpendicular to a second virtual line in which the central axis of the raw material supply part is extended.
The method of claim 4, wherein

And a vertical point of the first virtual line and the second virtual line is adjacent to a corner portion of the silicon melt portion to the maximum.
The method of claim 1,

The connection flow passage portion includes a lower surface portion and a pair of side portions extending substantially in the vertical direction at both ends of the lower surface portion, and the cross-sectional area of the lower surface portion is reduced according to the direction in which the molten silicon is conveyed refinery.
A silicon melt having a first channel portion at one end;

A one-way solidification part having a second channel part in contact with the first channel part to form a connection bath; And

A raw material supply part for transferring a silicon raw material to the silicon melting part,

The inlet of the raw material supply unit is disposed in the upper part of the silicon melter so that the path to be melted at the position where the silicon raw material is supplied to the silicon melter to move to the connection hot water passage is the maximum .
The method of claim 7, wherein

The silicon melt has a rectangular parallelepiped shape,

And the first channel portion is located at an edge portion of the silicon melt portion.
The method of claim 7, wherein

Inlet of the raw material supply unit is silicon refining apparatus, characterized in that disposed on the upper part of the silicon melted portion so that the straight line connecting the first channel portion and the inlet of the raw material supply is the maximum.
The method of claim 7, wherein

And the connecting hot dividing unit narrows the width of the channel formed by the first channel unit and the second channel unit along the direction in which the molten silicon is transferred.
The method of claim 7, wherein

The silicon melting portion or the one-way solidification portion

Refining apparatus of silicon, characterized by having a copper material.
The method of claim 7, wherein

The silicon melt is disposed on the outside, and includes a flow path flows through the fluid,

The flow path part

A first flow path part including a plurality of flow paths formed by a plurality of slits;

And a second flow passage portion extending to the first flow passage portion, wherein the plurality of flow passages are connected to each other to form one flow passage.
The method of claim 7, wherein

The one-way solidification part includes a first cooling channel portion and a second cooling channel portion flowing through the fluid installed on the outside,

A flow rate of the fluid flowing in the first cooling channel portion is greater than the flow rate of the fluid flowing in the second cooling channel portion.
A first silicon melter in which silicon melt is stored;

A second silicon melting part having a first channel part and having a second channel part contacting with the first channel part to form a first connection bath; And

The second silicon melt part includes a one-way solidification part having a third channel part and having a fourth channel part contacting with the third channel part to form a second connection bath;

And the first connection hot water supply part is disposed so that the path of the silicon melt to the second connection hot water part is maximized.
The method of claim 14,

The second silicon melt portion has a rectangular parallelepiped shape,

And the third channel portion is located at an edge portion of the second silicon melt portion.
The method of claim 14,

And the second channel portion is disposed above the second silicon melt portion so that a straight line connecting the second channel portion and the third channel portion is the maximum.
The method of claim 14,

Inlet of the raw material supply unit is silicon refining apparatus, characterized in that arranged so that the path to be melted at the position where the silicon raw material is supplied to the first silicon melting portion to move to the first connection hot water passage portion to the maximum.
The method of claim 17,

The first silicon melt portion has a rectangular parallelepiped shape,

And the first channel portion is positioned at an edge portion of the first silicon melt portion.
The method of claim 18,

Inlet of the raw material supply unit is silicon refining apparatus, characterized in that disposed on the upper part of the silicon melted portion so that the straight line connecting the first channel portion and the inlet of the raw material supply is the maximum.
The method of claim 14,

The first connection hot water supply part includes a channel consisting of the first channel part and the second channel part, or the second connection hot water supply part has a width of a channel including the third channel part and the fourth channel part of the one-way solidification part. The refinement | purification apparatus of silicon characterized by narrowing according to the conveyance direction.
The method of claim 14,

The silicon melt portion includes a respective flow path portion disposed on each outside,

Refining apparatus of the silicon, characterized in that the flow path portion disposed in the adjacent outer side is spaced through each other through the inside of the silicon melt portion.
The method of claim 14,

The silicon melting part has a plurality of flow path parts disposed on the outside,

The flow path width of at least one flow path portion of the plurality of flow path portions is larger than the flow path width of the remaining flow path portions.
The method of claim 14,

The one-way solidification portion has a plurality of cooling flow path portion disposed outside,

A flow path width of at least one of the plurality of cooling flow path portions is greater than that of the remaining flow paths.