WO2014001006A1 - Procédé de formation d'une structure électriquement conductrice sur un élément support, système stratifié et utilisation de ce procédé ou de ce système stratifié - Google Patents

Procédé de formation d'une structure électriquement conductrice sur un élément support, système stratifié et utilisation de ce procédé ou de ce système stratifié Download PDF

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Publication number
WO2014001006A1
WO2014001006A1 PCT/EP2013/060909 EP2013060909W WO2014001006A1 WO 2014001006 A1 WO2014001006 A1 WO 2014001006A1 EP 2013060909 W EP2013060909 W EP 2013060909W WO 2014001006 A1 WO2014001006 A1 WO 2014001006A1
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WO
WIPO (PCT)
Prior art keywords
layer
carrier element
electromagnetic radiation
functional
arrangement according
Prior art date
Application number
PCT/EP2013/060909
Other languages
German (de)
English (en)
Inventor
Andreas Grohe
Roland Gauch
Torsten GEPPERT
Lutz Bornschein
Kamal KATKHOUDA
Tobias Wuetherich
Andreas Letsch
Mawuli AMETOWOBLA
Original Assignee
Robert Bosch Gmbh
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Filing date
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Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2014001006A1 publication Critical patent/WO2014001006A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/361—Removing material for deburring or mechanical trimming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/38—Fabrics, fibrous materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the invention relates to a method for forming an electrically conductive structure on a carrier element. Furthermore, the invention relates to a layer arrangement, in particular for carrying out a method according to the invention, in order to form an electrically conductive structure on a carrier element. Finally, the invention relates to the use of a method according to the invention or a layer arrangement according to the invention for the formation of electrical contacting areas on rear sides of solar cells.
  • Electrically conductive structures on carrier elements are known from the prior art in many ways. For example, printed circuit boards serving as circuit carriers have such electrically conductive structures. Electrically conductive structures are also required, for example, in the electrical contacting of solar cells. It is already known from the prior art to arrange the electrical connections to the solar cells only on the back of the silicon wafer designed as a doped and acting as a functional element support elements of the solar cells. For this purpose, electrically conductive structures must be formed, which are isolated or separated from each other.
  • these structures should have the required accuracy in order to ensure the mentioned electrical insulation between the elements of the structure, on the other hand it is desirable that when forming such a structure the carrier element and / or a functional layer arranged on the side of the structure of the carrier element (usually in shape a dielectric passivation layer) is not damaged because damaged areas cause a reduction of the generated electric current through the solar cell and thus reduce the efficiency of the solar cell.
  • a method that allows, for example, in solar cells to form an electrically conductive structure without affecting the function of the support element (passivated silicon) to be produced inexpensively in industrial production use.
  • the object of the invention is to provide a method for forming an electrically conductive structure on a carrier element, in which at least the functional layer connected to the first layer and arranged below the first layer and / or the Material of the support element during removal of the first layer by means of electromagnetic radiation is not damaged. Furthermore, the method should be used cost-effectively, especially in mass production and have a high process reliability.
  • This object is achieved according to the invention in a method for forming an electrically conductive structure on a carrier element, wherein the method comprises the following steps: a) coating the flat carrier element at least on the side facing the conductive structure with a functional layer
  • Layer thickness of the first layer, the functional layer arranged under the first layer or the material of the carrier element are not damaged upon direct contacting of the first layer with the material of the carrier element, since upon penetration of the electromagnetic radiation after the removal of the first layer in the functional layer or in the Material of the support element by the higher ablation or damage threshold of the material of the func- Ons Mrs or the material of the support element damage to the functional layer or the support member is avoided.
  • Damage to or impairment of the functionality of the functional layer or of the carrier element is understood to mean, in particular, an (undesired) material removal and / or a defective change in the material of the corresponding element.
  • a change which changes the physical properties or chemical composition of the corresponding element in such a way that desired physical or chemical reactions no longer take place in their entirety.
  • Such changes can e.g. in solar cells, the formation of amorphous silicon, which has arisen from a very rapidly solidifying melt of formerly monocrystalline material.
  • the second layer has a material-specific removal threshold, in which the second layer has a lower ablation threshold upon penetration of the first electromagnetic radiation than the first layer upon penetration of the first electromagnetic radiation, so that during removal of the second layer the first layer adjacent to the second layer is at least substantially not damaged or its function is not impaired.
  • a two-stage removal process takes place on the two layers, wherein first the second layer disposed above the first layer is removed in regions, wherein the selection of the material (and not the layer thickness as in the first layer) for the second layer it is ensured that the first layer arranged under the second layer is not removed.
  • Such a two-stage removal process takes place by temporally successive action of the electromagnetic radiation at the corresponding regions of the first and second layer.
  • An advantageous development of the method according to the invention provides that the two processing steps (for the removal of the first and second layer) takes place at least almost simultaneously by using a steel divider or a beam former of a single electromagnetic radiation. As a result, the required process time for removing the two layers and, as a result, the production costs can be further reduced.
  • a laser beam device is preferably used as the electromagnetic radiation source, wherein the laser beam generated by the laser beam device during the first processing step (removal of the second layer) when using a metallic layer, in particular nickel for the second layer has a wavelength of in particular less than 10.6 ⁇ " ⁇ , in particular less than 1, 6 ⁇ " ⁇ , and in the second processing step (removal of the first layer) when using aluminum for the first layer has a wavelength of more than 500nm, in particular between 1, ⁇ and 1, ⁇ .
  • these parameters must be adjusted when using other materials for the first and second layers such that the removal threshold of the second layer is less than the removal threshold for the first layer, which in turn is less than the damage threshold for the functional layer.
  • the first layer which is usually made of aluminum.
  • the second layer provided for this serves mainly as the basis for a galvanic thickening, in that in the areas in which the second layer has not been removed, the second layer is thickened by means of a third (metallic) layer.
  • This galvanic thickening usually has a thickness in the micrometer range.
  • the invention also encompasses a layer arrangement which is particularly suitable for carrying out a method according to the invention.
  • the layer arrangement comprises a planar functional or carrier element, a subsequent to the support element functional layer which is covered by a first conductive, preferably metallic layer, wherein the functional layer has exposed areas in which the first layer extends to the support element and, for example Produces solar cells makes electrical contact with the doped silicon substrate, as well as a second conductive, preferably metallic layer adjacent to the first layer, and wherein it is provided according to the invention that the layers are ablated by material removal, and in that the first layer has a layer thickness in which the first layer has a lower ablation or damage threshold when intruding ner electromagnetic radiation in the first layer than the functional layer or the material of the carrier element.
  • the second layer consists of a material in which the second layer has a lower ablation threshold upon penetration of electromagnetic radiation than the first layer upon penetration of this one electromagnetic radiation.
  • such a ablation threshold is achieved using a pulsed laser beam having a pulse duration of about 10 ps at the first layer at a layer thickness of less than 100 nm, preferably less than 50 nm, more preferably about 25 nm, if the first layer consists at least predominantly of aluminum.
  • This small layer thickness has the advantage that a laser beam with relatively low fluence can be used, whereby damage to the functional layer or the support element arranged under the aluminum layer can be avoided.
  • the suitable layer thickness can be determined by varying the layer thickness in experiments.
  • the second layer a variety of different metals or materials in question.
  • the second layer consists at least predominantly of titanium, nickel, nickel vanadium, nickel chromium, tungsten, nickel with alloy constituents, titanium nitride or electrically conductive oxide layers (TCO) such as doped aluminum zinc oxide or doped indium tin oxide.
  • TCO electrically conductive oxide layers
  • the layer thickness of the second layer is less than 500 nm, preferably less than 60 nm. Again, the layer thickness can be determined by means of test series.
  • silicon nitride silicon oxide or aluminum oxide are used, in particular for solar cells.
  • the functional layer is arranged on both sides of the (planar) support member.
  • the carrier element is subjected to the applied thereon first layer of a heat treatment. This heat treatment preferably takes place before the application of the second layer.
  • the invention is preferably used for the formation of electrical contact areas on rear sides of solar cells.
  • the invention should by no means be limited to such applications. Rather, the invention can also be used in microsystems technology, sensor technology or chip technology.
  • the invention is always advantageously applicable where a semiconductor material is to be electrically contacted with a metallic layer having a thickness of more than 50 nm, whereby a damage or functional impairment would result from a removal process on a metallic layer and / or where electrical interconnected areas to be made of a sheet metal layer.
  • Fig. 7 shows the manufacturing process for producing an inventive
  • Fig. 8 is a simplified representation of a device which makes it possible to make the removal process of two layers of a layer construction according to the invention at least almost simultaneously.
  • the carrier element 10 is provided on both sides with a functional layer 1 1 in the form of a dielectric passivation.
  • a functional layer 1 1 in the form of a dielectric passivation.
  • silicon nitride, silicon oxide, aluminum oxide or amorphous silicon with a layer thickness between 10 nm and 1 ⁇ m are used as the material for the functional layer 11.
  • the functional layer 1 which is arranged in the illustration of FIGS.
  • the recesses 12 are in particular as point or channel-like recesses 12 with a width of, for example, between 1 ⁇ up to a few hundred ⁇ formed, which extend in the representation of the figures also perpendicular to the plane of the figures.
  • the formation of the recesses 12 takes place in a manner known per se, for example with etching pastes or by means of a laser beam device by means of (ultra) short-pulse removal.
  • Associated steps for forming the functional layer 1 1 and the recesses 12, such as cleaning or annealing are known from the prior art and are therefore not further explained.
  • a first, electrically conductive layer 13 is applied as a component of the structure 16 to the upper side of the functional layer 1 1 provided with the recesses 12.
  • the first layer 13 is preferably made of aluminum and has in the areas in which no recesses 12 are present, a layer thickness di less than 100nm, preferably less than 50nm, most preferably about 25nm.
  • the application of the first layer 13 on the functional layer 1 1 is carried out by PVD method such as full surface sputtering or vapor deposition of the functional layer 1 1.
  • a second, preferably likewise metallic, layer 14 is then applied to the first layer 13 as part of the electrically conductive structure 16 in accordance with FIG. 4. This is preferably done by sputtering.
  • the second layer 14 consists of a metal which is either well suited as an electroplating starter layer or which allows at least good adhesion of a galvanically deposited layer on the second layer 14.
  • the second layer 14 Typically, for the second layer 14
  • the second layer has a lower ablation threshold for laser ablation than the underlying first layer 13, which consists in particular of aluminum
  • the layer thickness d 2 of the second layer 14 is preferably less than 500 nm, in particular less than 60 nm.
  • Layer 14 for example, titanium nitride or transparent conductive oxide layers (TCO) such as doped aluminum zinc oxide or doped indium tin oxide can be used.
  • TCO transparent conductive oxide layers
  • the layer arrangement 100 described so far is treated with electromagnetic radiation.
  • a pulsed laser beam 1 which is generated by means of a laser beam device, not shown, is directed perpendicular to the layer arrangement 100 on the second layer 14.
  • the laser beam 1 thereby becomes the layer arrangement
  • the radiation axis of the laser beam 1 between two recesses 12 in the functional layer 1 1 is located. Furthermore, the laser beam 1 is moved relative to the surface of the second layer 14.
  • the second layer 14 By irradiating the second layer 14 with the laser beam 1, preferably short or ultrashort laser pulses with a pulse duration of less than
  • the second layer 14 is removed to the level of the first layer 13. Due to the fact that the ablation threshold of the second layer 14 is less than the ablation threshold of the first layer 13 arranged below the second layer 14, according to the invention the first layer 13 is at least substantially not damaged when the second layer 14 is removed.
  • the first layer 14 is removed in the regions in which the second layer 14 was previously removed.
  • the laser beam 1 is also perpendicular to
  • Aligned layer arrangement 100 wherein this short, preferably ultrashort laser pulses with less than 30ps with a wavelength of more than 500nm, preferably between ⁇ , ⁇ and ⁇ , ⁇ , has. Due to the fact that the ablation threshold of the first layer 13 is selected as a result of the choice of the layer thickness of the first layer 13, that the damage threshold of the functional layer 1 1 arranged below the first layer 13 is higher, the removal of the first layer 13 takes place up to the level of the functional layer 1 1 at least almost, in particular no damage to the functional layer 1 1, and at least almost, in particular no damage to the below the functional layer 1 1 located material of the support member 10 instead.
  • a third layer 15 can be applied to the upper side of the second layer 14 in a further manufacturing process for thickening the structure 16 and achieving good electrical conductivity with a low ohmic resistance. This is preferably done in
  • the second layer 14 is thus selected or formed, in particular with regard to its suitability as the basis for the galvanic deposition of the layer 15 on the second layer 14.
  • the deposited layer 15 is preferably an order of magnitude thicker than the first and second layers 13, 14 arranged underneath.
  • the removal of the first and second layers 13, 14 respectively comprises layer arrangements comprising the first Layer 13, the second layer 14 and the third layer 15 transversely to the Abtragungsraum spaced apart. The spacing is preferably greater than the total layer thickness formed by the first, second and third layers 13, 14, 15.
  • FIG. 8 shows, in a greatly simplified representation, a production device 20 which is suitable for carrying out the two removal processes on the two layers 13, 14 at the same time.
  • the production device 20 has a beam splitter 21, which splits an incoming laser beam 1 into two separate laser beams 1 'and 1 ", which are directed onto the layer arrangement 100 via focusing optics 25.
  • the laser beams V and 1" are thereby in the direction of the arrow 26 is moved relative to the surface of the layer assembly 100.
  • movement of the laser beams V 1 'perpendicular to the drawing plane of Fig. 8 is also conceivable, this movement taking place in the form of two successive tracks arranged laterally offset in the drawing plane of Fig. 8.
  • the power of the laser beam 1 becomes divided in such a ratio that in each case the conditions necessary for the selective removal of the second layer 14 and for the selective removal of the first layer 13.
  • a beam shaper can be used which generates a laser beam 1 with regions of different fluence
  • devices can be used using two separately generated laser beams in compliance with the above conditions.
  • the layer arrangement 100 described so far or the method according to the invention can be modified or modified in many different ways without deviating from the idea of the invention.

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  • Physics & Mathematics (AREA)
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  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
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  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un procédé de formation d'une structure électriquement conductrice (16) sur un élément support (10), comprenant les étapes suivantes : a) dépôt d'une couche fonctionnelle (11) sur l'élément support (10) plan, au moins sur la face dirigée vers la structure conductrice (16) ; b) élimination par zones de la couche fonctionnelle (11) jusqu'à atteindre la surface de l'élément support (10) ; c) dépôt sur la couche fonctionnelle (11) d'une première couche conductrice (13), de préférence métallique, qui va jusqu'à la surface des zones de l'élément support (10) dans lesquelles la couche fonctionnelle (11) a été éliminée ; d) dépôt d'une deuxième couche conductrice (14), de préférence métallique, sur la première couche (13) ; e) enlèvement par zones de la deuxième couche (14) au moyen d'un premier rayonnement électromagnétique dans une première étape de façonnage ; f) enlèvement par zones de la première couche (13) au moyen d'une deuxième rayonnement électromagnétique dans une deuxième étape de façonnage dans les zones où la deuxième couche (14) a été éliminée.
PCT/EP2013/060909 2012-06-28 2013-05-28 Procédé de formation d'une structure électriquement conductrice sur un élément support, système stratifié et utilisation de ce procédé ou de ce système stratifié WO2014001006A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012211161.1A DE102012211161A1 (de) 2012-06-28 2012-06-28 Verfahren zum Ausbilden einer elektrisch leitenden Struktur an einem Trägerelement, Schichtanordnung sowie Verwendung eines Verfahrens oder einer Schichtanordnung
DE102012211161.1 2012-06-28

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WO2014001006A1 true WO2014001006A1 (fr) 2014-01-03

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DE102015216797A1 (de) * 2015-09-02 2017-03-02 Robert Bosch Gmbh Verfahren zum Reinigen von Oberflächen sowie eine Gasglocke zum Durchführen des Verfahrens

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JIM BOVATSEK ET AL: "<title>Effects of pulse duration on the ns-laser pulse induced removal of thin film materials used in photovoltaics</title>", PROCEEDINGS OF SPIE, vol. 7201, 12 February 2009 (2009-02-12), pages 720116, XP055076489, ISSN: 0277-786X, DOI: 10.1117/12.809842 *

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