WO2013160212A9 - Halbleiterlaserlichtquelle mit einem kantenemittierenden halbleiterkörper - Google Patents
Halbleiterlaserlichtquelle mit einem kantenemittierenden halbleiterkörper Download PDFInfo
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- WO2013160212A9 WO2013160212A9 PCT/EP2013/058217 EP2013058217W WO2013160212A9 WO 2013160212 A9 WO2013160212 A9 WO 2013160212A9 EP 2013058217 W EP2013058217 W EP 2013058217W WO 2013160212 A9 WO2013160212 A9 WO 2013160212A9
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
Definitions
- the present disclosure relates to a semiconductor laser light source having an edge-emitting semiconductor body.
- a semiconductor laser light source with an edge-emitting semiconductor body is known, for example, from the document WO 2009/080012 Al.
- a problem with conventional semiconductor laser light sources is that deviations of the far field of the emitted laser radiation from the Gaussian beam profile can lead to insufficient imaging properties.
- Specify semiconductor laser light source which has the lowest possible disturbances in the far field and can be operated efficiently with a particularly stable output.
- a semiconductor laser light source is indicated.
- Semiconductor laser light source comprises a semiconductor body.
- the semiconductor body includes a semiconductor layer stack having an n-type layer, an active layer, and a p-type layer. The direction in which the n conductive layer, the active layer and the p-type
- Each of these layers may be composed of a plurality of individual layers, for example, the n-type layer may also be an n-type semiconductor substrate and a n-type semiconductor substrate, in particular epitaxially grown
- the active layer contains, for example, a series of individual layers, by means of which a quantum well structure, in particular a single quantum well structure (SQW, single quantum well) or multiple quantum well structure (MQW, multiple quantum well), is formed.
- a quantum well structure in particular a single quantum well structure (SQW, single quantum well) or multiple quantum well structure (MQW, multiple quantum well
- the semiconductor layer stack is designed to generate an electromagnetic radiation which comprises a coherent component.
- the semiconductor laser light source preferably the semiconductor body, contains a resonator for this purpose.
- the coherent portion of the electromagnetic radiation is laser radiation, for example infrared, visible or ultraviolet
- the coherent component can be, for example, laser radiation in the fundamental mode of the
- the semiconductor body is based on the semi-conductor material ⁇ InGaN.
- it can emit electromagnetic radiation whose coherent component has an intensity maximum in the blue or green spectral range.
- the semiconductor layer stack may be based, for example, on the semiconductor material InGaAs.
- the coherent part has one
- the electromagnetic radiation emitted by the semiconductor layer stack during operation of the semiconductor laser light source contains, in particular, a further fraction not covered by the coherent component.
- Semiconductor layer stack another coherent portion of electromagnetic radiation and / or incoherent electromagnetic radiation.
- the further coherent component may, for example, be higher-order laser modes, for example parasitic substrate and / or waveguide modes.
- the semiconductor body is, in particular, an edge-emitting semiconductor body. This means that the semiconductor body has a coupling-out surface, sometimes also called "facet", which is inclined to the active layer, in particular perpendicular to the active layer.
- the semiconductor laser light source is designed to decouple the coherent component of the electromagnetic radiation from the coupling-out surface of the semiconductor body.
- the edge emitting is a laser. In one embodiment, the edge emitting is a laser.
- Semiconductor body one of the decoupling surface opposite lateral side surface.
- the transverse side surface is preferably mirrored and forms the resonator together with the decoupling surface.
- the semiconductor body may have two opposite longitudinal side surfaces, which
- the decoupling surface, the transverse side surface and / or the longitudinal side surfaces extend in particular from an upper-side outer surface to one - the p-side Outer surface opposite - n-side outer surface of the semiconductor body.
- the semiconductor body has a web, which is referred to below as a waveguide web.
- the waveguide ridge is formed from the semiconductor layer stack and has a main extension direction, which is preferential ⁇ example in the direction of a normal vector to the output coupling ⁇ surface.
- a "web" according to the present disclosure is, in particular, shaped in such a way that, in its main extension direction, it has at least twice, preferably at least five times, the extent as perpendicular to it in plan view of the p-side outer surface of the semiconductor body
- Decoupling surface to the transverse side surface of the semiconductor ⁇ body It is formed, for example, by structuring a p-side surface of the semiconductor body.
- the semiconductor body has an inclined to the decoupling surface, in particular one to the decoupling surface senk ⁇ right, another outer surface.
- the further outer surface is one or more of the following surfaces: longitudinal side surface, p-side outer surface, n-side outer surface.
- the semiconductor body has at least one light
- the light-scattering subarea diffuses the further coherent portion of the electromagnetic radiation and / or the incoherent one Proportion of the electromagnetic radiation at least partially in the direction of the other outer surface.
- the light-scattering subregion can generate electromagnetic radiation generated by the semiconductor layer stack
- electro-magnetic radiation from ⁇ parasitic substrate and / or waveguide modes by means of the light scattering portion can be directed away from the output surface.
- the semiconductor body has at least one light-scattering subarea.
- the semiconductor body can also have different light-scattering subregions which are provided to direct electromagnetic radiation emitted by the semiconductor layer stack to different further outer surfaces of the semiconductor body.
- the inventors have found that the intensity of the portion scattered by the at least one light-scattering portion in the direction of the further outer surface scattered part of Electromagnetic radiation varies linearly or at least approximately linearly with the intensity of the decoupled from the decoupling surface coherent component.
- the scattering of the light portion to the outer surface toward steered scattered radiation can therefore measured with advantage and are preferably used for controlling or regulating an operation ⁇ current through the semiconductor layer stack.
- the proportion of higher-order laser modes is particularly low, so that the beam profile has a particularly small deviation from a Gaussian shape.
- the beam profile so no, or minor side peaks or waves (so-called "ripple") on.
- the light-scattering part ⁇ area with advantage, especially not a negative impact on typical laser characteristics such as lasing threshold and slope from.
- the Mirroring the lateral side surface which is opposite to the decoupling surface to be able to measure the intensity of the coherent portion of the electromagnetic radiation, as is common in conventional semiconductor laser light sources.
- the at least one light-scattering partial region extends from the p-conducting layer or from the n-conducting layer into the active layer or through the active layer. In this way, lateral disturbances of the beam profile can be reduced particularly effectively.
- the at least one light-scattering partial region extends at least in the p-conductive layer, it is laterally spaced from the waveguide web at least in the region of the p-conductive layer. The lateral distance is in a development ⁇ 20 ⁇ , preferably -S 5 ⁇ and particularly preferably -S 2 ⁇ . If the semiconductor laser light source has a plurality of light-scattering partial regions, in particular each of the partial regions extending at least in the p-conductive layer is laterally spaced from the waveguide web at least in the region of the p-conductive layer.
- the height of the waveguide ridge can be selected to be particularly large, as a result of which a particularly low p-side current widening can advantageously be achieved.
- the shape of the waveguide ridge would have to be chosen such that only the fundamental mode of the edge-emitting semiconductor body can oscillate.
- the waveguide walk should then only have a comparatively lower height.
- this can lead to an undesirably high threshold current due to a comparatively large p-side current widening.
- the use of absorber layers laterally of the waveguide web can be dispensed with, which also dampens the fundamental mode of the laser radiation.
- a particularly high efficiency can be achieved.
- the first light-scattering partial region extends, for example, at least in the p-conducting region
- Shift in a further development it runs from the p conductive layer into the active layer or through the active layer into the n-type layer.
- the second light-scattering portion extends in this embodiment, at least in the n-type layer. In a further development, it runs exclusively in the n-conducting layer, wherein it extends for example over at least 10%, preferably over at least 30% and particularly preferably over at least 50% of a thickness of the n-conducting layer.
- first light-scattering partial region and the second light-scattering partial region do not overlap or only partially overlap in plan view onto the coupling-out surface in the vertical direction.
- the second light-scattering portion overlap with the waveguide web and the first light-scattering portion may be laterally spaced from the waveguide web.
- the light scattering in the n-conductive layer portion contributes, for example, to the scattering of laser modes, which are guided in the n-type layer, in particular in the substrate, so that with the second light
- a cavity is formed in the semiconductor body to form the at least one light-scattering partial region.
- the cavity can be
- the cavity may, for example, be gas-filled, in particular air-filled. she is
- the at least one light-scattering portion is formed by means of a material composition and / or by means of a crystal structure, which of the material composition or crystal structure
- the light-scattering subarea may have a semiconductor composition or doping that differs from the adjacent region, or it may be provided with defects, for example by means of a so-called stealth dicing method.
- the at least one light-scattering portion by means of a transverse web is formed, which is applied to the side of the waveguide ridge on the semiconductor layer stack or is formed from the semiconductor layer ⁇ stack.
- the crossbar has one in particular
- Main extension direction which is different from the main extension direction of the waveguide web.
- the main extension directions of the waveguide web and the crosspiece are perpendicular to each other in a development. Lateral, the crosspiece is spaced in a further development of the waveguide web.
- the transverse web is formed by the semiconductor layer stack, it can - like the waveguide web itself - by means of a
- Etching process be prepared by structuring the p-side surface of the semiconductor layer stack.
- the material of the cross bar does not need to be a semiconductor material, it can also be applied to the semiconductor layer stack another material to form the transverse web.
- the crossbar preferably has a refractive index that is different from the refractive index of the
- the semiconductor laser light source has a plurality of transverse webs, which follow one another in the direction of the main extension direction of the waveguide web. Preference ⁇ as they follow periodically one another and form in particular a distributed Bragg reflector (distributed Bragg reflector, DBR).
- DBR distributed Bragg reflector
- Transverse webs arranged on both sides next to the waveguide web.
- two sides are next to the waveguide web.
- Waveguide ridge are arranged.
- the at least one light-scattering subarea has a main extension plane which runs inclined to the vertical direction in which the n-conducting layer, the active layer and the p-conducting layer follow one another.
- the main plane of extension is oblique to the vertical direction and parallel to the main extension direction of the waveguide web, which is in particular parallel to the normal vector on the decoupling surface.
- the light-scattering portion extends from the decoupling surface to the opposite transverse side surface.
- the main extension plane becomes the light scattering
- Part area is spanned in particular by the two directions in which it has its largest dimensions. If, for example, the light-scattering subregion has the shape of a cuboid, its main plane of extension becomes
- Main extension plane for example, at least twice as large, preferably at least five times as large as its dimension perpendicular to the main plane of extension.
- the at least one light-scattering subregion has a main extension plane which is inclined to the normal vector on the decoupling surface. In particular, it runs obliquely to the normal vector on the decoupling surface and parallel to the vertical direction.
- the light-scattering portion is U-shaped in plan view on its main extension plane. Such a configuration is particularly well suited for a light-scattering portion, whose
- Main extension plane oblique to the normal vector on the Decoupling surface and in particular runs parallel to the vertical direction.
- the U-shaped light-scattering portion surrounds a portion of the active layer.
- an undesired part of the electromagnetic radiation generated by the semiconductor layer stack can be particularly effectively shielded from the coupling-out surface and directed to the further outer surface.
- Decoupling surface is arranged. "In the vicinity of the decoupling surface” means in particular that the distance of the
- the semiconductor laser light source has a photodiode which is arranged on or above the further outer surface of the semiconductor body.
- the photodiode is monolithically integrated into the semiconductor body. The photodiode expediently generates an electrical signal in
- the photodiode may advantageously be arranged laterally next to the waveguide ridge, so that in the main extension direction of the waveguide ridge particularly small dimension of the semiconductor laser light source can be achieved.
- a monolithically integrated in the semiconductor body photodiode is particularly cost-effective and space-saving and requires after completion of the semiconductor body no further assembly steps.
- the semiconductor laser light source is particularly to be ⁇ forms to irradiate the photo diode with a part of the electromagnetic radiation generated by the semiconductor layer stack ⁇ .
- this is not a reduction of
- the photodiode is arranged on or over the further outer surface of the semiconductor body, then in one development, in plan view of the further outer surface, at least one region of the further outer surface overlapping with the photodiode is roughened or provided with macroscopic coupling-out structures.
- Decoupling structures are referred to in the present context as "macroscopic" if they have at least in one dimension a dimension of 10 ⁇ or more.
- a material is provided between the photodiode and the active layer according to a further arranged with a refractive index ⁇ which is greater than a refractive index of Photodiode and as a refractive index of the active layer.
- the material is in particular an insulator.
- the photodiode extends along the waveguide web over a majority of the semiconductor ⁇ body, so that their length in particular 80% or more of the length of the waveguide web - ie its dimension in the main extension direction - is.
- the photodiode is arranged in the vicinity of the decoupling surface, in particular it has to the opposite side of the decoupling surface a distance which is at least twice as large, preferably at least four times as large as the distance to the decoupling surface.
- a photodiode, which does not extend over much of the length of the semiconductor body, may due to their
- the semiconductor laser light source has an electrical circuit.
- the electrical circuit is provided, for example, to supply the semiconductor layer stack with an operating current.
- the electrical circuit is suitably electrically connected to the
- the semiconductor laser light source is provided for example for USAGE ⁇ dung in a laser projector, for which are particularly well suited for InGaN-based semiconductor body. It can also be used in a 3D scanner for what
- InGaAs based semiconductor bodies are particularly well suited.
- Laser projection applications and 3D scanning applications place high demands on the focusability and / or collimability of the laser light source.
- a good beam quality in particular a Gaussian-shaped or almost Gaussian-shaped beam profile, as it is achievable with the semiconductor laser ⁇ light source according to the present disclosure, particularly advantageous.
- the semiconductor laser light source with the photodiode and the electrical circuit advantageously has a particularly long service life.
- the service life refers in particular to the operating time of the semiconductor laser light source up to
- Figure 1A is a schematic plan view of a
- Figure 1B is a schematic cross-section through the
- Figure 2 is a schematic plan view of a
- Figure 3A is a schematic plan view of a
- Figure 3B is a schematic cross section through the
- Figure 3C is a schematic cross section through the
- Figure 4A shows a schematic cross section through a
- Figure 4B is a schematic plan view of the
- Figure 5A is a schematic plan view of a
- FIG. 5B shows a schematic cross section through the
- Figure 5C is a schematic cross section through a
- FIG. 6 shows a schematic perspective illustration of a sixth laser light source
- FIG. 7 shows a schematic cross section through a seventh
- FIG. 9 is a schematic perspective view of a ninth laser light source, FIG.
- Figure 11 is a schematic plan view of an eleventh
- Figure 12 is a schematic plan view of a twelfth
- LaserIichtario, 13 shows a section of the semiconductor body of the eleventh laser light source in a schematic plan view of its active layer
- FIG. 14 shows a schematic cross section through the eleventh
- Figure 1A shows a schematic plan view of a
- FIG. 1B shows a schematic cross section through the semiconductor body 10 of the laser light source according to the first exemplary embodiment in the plane B-B shown in FIG. 1A
- the semiconductor body 10 includes a semiconductor layer stack 110 formed of an n-type layer 111, an active layer 112, and a p-type layer 113 successively sequential in a direction V called a vertical direction.
- the n-type layer 111, the active layer 112 and / or the p-type layer 113 may each be formed as layer sequences.
- the n-type layer 111, a growth substrate and a subsequent epitaxially may be formed as layer sequences.
- the semiconductor layer stack contains waveguide layers, which include the active layer 112 for guiding the electromagnetic radiation generated therein.
- Such semiconductor layer stacks 110 are known in principle to the person skilled in the art and are therefore not explained in any more detail here.
- An example of the structure of such a semiconductor layer ⁇ stack 110 is described in the document WO 2009/080012 Al, the disclosure content of which is hereby incorporated by reference in the present application.
- the semiconductor body 10 is of a plurality of
- Outer surfaces limited: a decoupling surface 101, one of the decoupling surface opposite, mirrored transverse side surface 103, two opposite longitudinal side surfaces 102A, a p-side outer surface 102B and an n-side outer surface 102C.
- the decoupling surface 101, the longitudinal side surface 102A and the lateral side surface 103 are, for example
- 102A adjoin the outcoupling surface 101 and the lateral side surface 103, and are particularly perpendicular to them.
- the longitudinal side surfaces 102A, the decoupling surface 101 and the lateral side surface 103 extend in particular from the p-side outer surface 102B to the n-side
- the semiconductor layer stack 110 is designed to generate electromagnetic radiation which comprises a coherent component 21.
- a resonator for the electromagnetic radiation is formed by the decoupling surface 101 together with the mirrored transverse side surface 103.
- the semiconductor layer stack ⁇ 110 may have one of the outcoupling surface 101 to the opposite lateral side surface 103 extending waveguide ridge 114.
- Waveguide ridge 114 is thus in particular parallel to the surface normal N on the decoupling surface 101 and perpendicular to the vertical direction V.
- the semiconductor body 10 is designed to decouple the coherent component 21 of the electromagnetic radiation generated by the semiconductor layer stack 110 from the decoupling surface 101.
- the decoupling surface 101 is in particular
- Semiconductor body may be a rupture method are used, in which the semiconductor body is separated while exposing the decoupling surface 101 of the wafer composite. In this method, it may happen that the breaking edge only
- Decoupling surface 110 is also the active layer 110th
- edge-emitting semiconductor bodies 10 are known in principle to the person skilled in the art-for example, from WO 2009/080012 A1 already incorporated herein by reference-and are therefore not explained in greater detail here.
- the semiconductor body 10 of the semiconductor laser light source according to the present first embodiment has a
- a plurality of light-scattering portions 12 are to
- Electromagnetic radiation in the direction of a different from the decoupling surface 101 further outer surface of the semiconductor body 10 - in the present case to the longitudinal side surfaces 102A - out to direct.
- the radiation scattered by one of the light-scattering subregions 12 towards one of the longitudinal side surfaces 102A is identified by reference numeral 22 in FIG. 1A.
- the outer contours of the light-scattering portions 12 may have different shapes. Is exemplary in the
- a second light-scattering portion 12B has, for example, in plan view of the p-type layer 113 has a rectangular outer contour, a third light-scattering portion 12C an oval, in particular elliptical, outer contour.
- Semiconductor laser light source for example, have dimensions - in particular lateral dimensions - of between 0.1 .mu.m and 1000 .mu.m, preferably between 1 .mu.m and 300 .mu.m.
- lateral dimensions - of between 0.1 .mu.m and 1000 .mu.m, preferably between 1 .mu.m and 300 .mu.m.
- Outer contour - in other words with beam-shaped light scattering portions 12B - preferably have the short sides of the rectangle dimensions between 1 ym and 50 ym and / or the long sides of the rectangle have dimensions between lym and 1000 ym, preferably between 5 ym and 300 ym.
- the long sides of the rectangle have in addition a greater length - preferably at least twice the length - as the short sides.
- the boundaries are included.
- the production of the light-scattering partial regions 12 can be effected, for example, by wet etching, whereby, for example, a shape of the light-scattering partial region 12 that tapers in the vertical direction V can be achieved, as shown by way of example in FIG. 1B on the basis of the first light-scattering partial region 12A.
- the light-scattering part regions 12 can also be essentially cuboid-shaped, such as, for example, based on the second light scattering
- Subareas 12 represent cavities in the semiconductor body 10 and generally have an opening on an outer surface of the semiconductor body 10, in this case on the p-side outer surface 102B. They are in particular filled with gas, preferably with air.
- Light-scattering subregions 12 can alternatively be produced by means of a method which is known to the person skilled in the art by the term "stealth dicing" in principle.
- the semiconductor body is illuminated with a focused laser beam, wherein the focal point of the laser beam is positioned within the semiconductor layer stack. In the region of the focal point in this way the crystal structure of the semiconductor material of the semiconductor layer stack 110
- Semiconductor body 10 can be made in this way a light scattering portion with the desired shape and size.
- using a stealth dicing Method produced light scattering portions 12th
- a main plane E of the light-scattering structures 12 extends at an angle to
- Main extension direction S of the waveguide web 114 is, in other words, preferably not parallel to each other.
- the main plane E extends parallel to the vertical direction V.
- the main plane E is the plane which is defined by the two direction, in which the light-scattering portion 12 has its two largest dimensions.
- the second light-scattering portion 12B it is shown in Figs. 1A and 1B
- the light-scattering portions in the vertical direction V have different dimensions.
- the first light-scattering portion 12A extends completely in the p-type layer 113
- the second light-scattering portion 12B extends from the p-type layer 113 into the active layer 112
- the third light-scattering portion 12C proceeds from the p-type
- the light-scattering partial regions 12 do not extend into the semiconductor body 10 from the p-side outer surface 102B, but from the n-side outer surface 102C. This variant is indicated in FIG. 1B by the dashed partial region 12. In this variant, the light-scattering portions are completely in the n-type, for example
- they can also be arranged below the waveguide web 114.
- they are manufactured with the above-explained stealth dicing method.
- Figure 2 shows a schematic plan view of a
- Semiconductor body 10 of a laser light source according to a second embodiment.
- the basic structure of the semiconductor body 10 corresponds to that of the first embodiment.
- Subareas 12 are of the side surfaces (decoupling surface 101, longitudinal side surfaces 102A and transverse side surface 103) of the semiconductor body 10
- the light scattering extends
- the light-scattering partial regions 12 can also extend from the n-side surface 12 in the vertical direction V into the semiconductor body 10 and, for example, run completely within the n-conductive layer 111.
- the light-scattering subregions 12 are preferably produced before the decoupling surface 101 and the transverse side surface 103 of the semiconductor body 10 are exposed, preferably by means of the stealth dicing method described above.
- the uncovering of the decoupling surface 101 and the transverse side surface 103 takes place, for example, by means of a fracture method.
- Position and shape of the broken edges are influenced.
- the light-scattering portions 12 are laterally spaced from the waveguide ridge 114.
- the lateral distance D is in particular the distance perpendicular to the main extension direction S of the waveguide web 114 in plan view onto the p-side outer surface 102B.
- the lateral distance is less than 20 ⁇ , preferably less than 5 ⁇ and more preferably less than 2 ⁇ . In one embodiment, it is greater than 0.5 ⁇ .
- the light-scattering structures 12 are particularly well suited to suppress the radiation of laser modes of higher order than the fundamental mode of the decoupling surface 101.
- the laser light source makes use of the different spatial intensity distribution of the different modes within the semiconductor body 10.
- the light-scattering portions spread toward laser 12 ⁇ radiation 22 of these modes, for example, toward the direction perpendicular to the output surface 101 longitudinal side surfaces 102A.
- FIG. 3A shows a semiconductor body 10 of a laser light source according to a third exemplary embodiment in a schematic plan view.
- FIG. 3B shows the semiconductor body 10 in a schematic cross section in the sectional plane B-B, and
- FIG. 3C shows the semiconductor body 10 in one
- the light-diffusing portions 12 are also formed as projections of the p-type layer 113, such as the transverse webs 120A, or they are applied to a surface of the p-type layer 113, as the transverse webs 120B.
- the transverse webs 120A, 120B have a main extension direction Q, which in the present case in plan view of the p-type layer 113 perpendicular to the main extension direction S of
- Waveguide land 114 runs.
- the main extension plane the transverse webs 120A and 120B falls in the present case with the
- the transverse webs 120A are in particular by a
- the second transverse webs 120B are made, for example, by placing a material on the p-side outer surface 102B
- all transverse webs 120A, 120B are formed by structuring the p-type layer 113.
- all transverse webs 120A, 120B are formed on the p-type layer 113 by depositing a material different from the semiconductor material of the p-type layer.
- the refractive index is the
- Layer 113 different; in particular, it is lower than the refractive index of the p-type layer 113. This may be achieved, for example, by an ion implantation method.
- the refractive index of p-GaN for example, can be lowered from 2.46 to 2.26, in particular by implantation of protons (H + ).
- the transverse webs 120A, 120B are not necessarily protrusions of the p-type layer 113 educated. Instead, they may extend into the n-side outer surface 102C, at least into or through the p-conductive layer 113, in particular analogously to the rectangular light-scattering partial regions 12B of the first exemplary embodiment.
- Waveguide land 114 can be achieved.
- n-conducting substances such as Si
- p-conducting substances such as Mg, Zn, Be and / or insulating substances
- B He, N, H.
- Embodiment also follow more than two transverse webs 120 A, 120 B in the main extension direction S of the waveguide web 114.
- the transverse webs 120A, 120B following one another in this direction are arranged periodically in a preferred development of this variant.
- DBR distributed Bragg reflector
- the semiconductor body 10 in this and the other exemplary embodiments expediently has an electrode 140 for electrically connecting the semiconductor layer stack 110. Between the electrode 140 and the p-type layer 113, a passivation 130 is preferably attached. The passivation 130 has an opening that surrounds the
- Waveguide land 114 leaves free.
- FIGS. 4A and 4B show a schematic cross section (FIG. 4A) and a schematic plan view (FIG. 4B) of a semiconductor body 10 of a semiconductor laser light source according to a fourth exemplary embodiment.
- the semiconductor body 10 comprises first light-scattering member ⁇ portions 12a extending from the p-side outer surface 102B in the p-type layer 113 of the semiconductor layer ⁇ stack 110 in, through the active layer 112 and into the n-type layer 111 extend into it.
- Its main extension plane E is, unlike, for example, the first embodiment, not parallel to the vertical direction V, but it is inclined to this direction.
- the first light-scattering subareas 12A are formed such that they run laterally onto the waveguide web 114 in the course of the n-type layer 111 toward the p-type layer 113.
- the semiconductor body 10 contains according to the fourth embodiment, second light-scattering portions 12B which, starting from the waveguide ridge 114 against ⁇ overlying n-side outer surface 102C of the n-type layer 111 in the semiconductor body 10 in extend. In particular, they run obliquely toward the active layer 112, but run in particular completely within the n-type layer 111. In this case, they extend for example over at least 50% of the layer thickness, ie
- scattering portions each extend at an angle, ie in particular not parallel to the vertical direction V, but preferably parallel to the normal vector N to the decoupling surface 101 provided for coupling out the coherent portion 21 of the electromagnetic radiation.
- the first light-scattering subregions are presently spaced laterally from the waveguide web 14.
- at least a second light-scattering portion 12B overlaps the waveguide ridge 114 in plan view onto the p-side outer surface 102B.
- the light-scattering portions 12A, 12B are example ⁇ by means of incisions in the semiconductor body 10
- Subareas 12A, 12B extend in the present case from the Decoupling surface 101 to the opposite transverse side surface 103 over the entire length of the semiconductor body 10th
- the first light-diffusing portions 12A are particularly well suited to improve the beam quality in the lateral direction, i. in the main plane of extension of the active layer 112.
- the second light-scattering portions 12B are particularly well suited for improving the beam quality of the semiconductor laser light source in the vertical direction V.
- Each light scattering portion 12A, 12B is to pre ⁇ see generated by the active layer 112 of electromagnetic radiation ⁇ diagram to an outer surface or to several
- FIG. 5A shows a semiconductor body of a semiconductor laser light source according to a fifth exemplary embodiment.
- FIG. 5B shows a schematic cross section through the semiconductor body 10 of FIG. 5A in the sectional plane B-B.
- the semiconductor body 10 has a semiconductor layer stack 110 with an n-type layer 111, an active layer 112, and a p-type layer 113.
- the p-side surface 102B of the p-type layer 113 is patterned to form a waveguide ridge 114.
- the main extension direction S of the waveguide web coincides in particular with the other exemplary embodiments the normal vector N on the decoupling surface 101 of the
- Semiconductor body 10 which is provided for coupling out a coherent portion 21 of the electromagnetic radiation generated by the active layer 112.
- the semiconductor body 10 has a light-scattering subregion 12 which has a main extension plane E which runs parallel to the vertical direction V and obliquely to the main extension direction S of the waveguide web 114.
- the main extension plane E coincides with the sectional plane B-B of FIG. 5B.
- the light-scattering portion 12 has in plan view of its main extension plane E (and present in
- Top view of the decoupling surface 101 is a U-shaped
- the opening de U-shape is the p-side
- the legs of the U-shape are preferably parallel to the vertical direction V.
- the light-scattering portion 12 extends from the p-side surface 102B of the semiconductor layer stack 110 and at a lateral distance D from the waveguide ridge 114 into the p-type layer 113, through the active layer 112 and into the n-type layer 111 into it.
- the light-scattering portion 12 has a kink or a bend and passes under the waveguide ridge 114. In the further course, he kinks again or has another bend, so that he on the opposite
- the light-scattering portion 12 encloses a portion 1120 of the active layer 112.
- a distance between the light-scattering portion ⁇ portion 12 is smaller from the output surface 101 than the
- the latter distance is preferably at least twice as large, more preferably four times as large as the distance of the light scattering
- Partial region 12 to the decoupling surface 101. In this way, particularly much electromagnetic radiation can be coupled out of parasitic laser modes and possibly one
- the extent of the light-scattering portion 12 perpendicular to its main plane E is preferably at most half, more preferably at most 20% of its greatest extension in the main plane of extension E.
- the light-scattering portion 12 is a diagonal, light-scattering wall within the semiconductor body 10, which is "pierced" by the waveguide land 114.
- the wall has an extension between 5 ym and 500 ym parallel to its main extension plane E and an extension between 1 ym and 50 ym perpendicular to the main extension plane E, with the boundaries respectively included.
- the extension is parallel to the main extension plane E ⁇ preferably greater than the extent perpendicular thereto, in particular at least twice as large.
- FIG. 5C shows a variant of the semiconductor body according to the fifth exemplary embodiment in a schematic
- Subarea 12 in this variant, two first light-scattering portions 12A are formed, which extend completely within the p-type layer 113 and laterally spaced by a distance D from the waveguide web 114.
- a second light-scattering portion 12B is arranged, which extends completely within the n-type layer 111 and overlaps in plan view of the p-type layer 113 with the waveguide web 114 and the first light-scattering portions 12A.
- the outer contours of the first light which are remote from the waveguide web 114
- Subarea 12B are flush in particular in this plan view.
- the light-scattering subregions according to this variant can be produced particularly easily by structuring from the p-type layer 113 and from the n-type layer 111.
- the production of the light-scattering subregion of the fifth exemplary embodiment according to FIGS. 5A and 5B is more complex - it can take place, for example, by means of the stealth dicing method explained in more detail above.
- this light-scattering subarea 12 by means of this light-scattering subarea 12, a particularly efficient scattering of a for decoupling at the decoupling surface 101
- the extending in the n-type layer 111 portion of the light-scattering portion 12 of the fifth embodiment ⁇ example, or the second light-scattering portion 12B of the variant of the fifth embodiment preferably extend over 10% or more, more preferably over 30% or more , in particular more than 50% or more of the thickness of the n-type layer 111.
- FIG. 6 shows a schematic perspective view of a semiconductor laser light source according to a sixth embodiment.
- the semiconductor laser light source according to the present sixth exemplary embodiment has a semiconductor body 10 which is constructed as described in connection with the fifth exemplary embodiment with reference to FIGS. 5A and 5B or with the variant of the fifth exemplary embodiment with reference to FIGS. 5A and 5C.
- the semiconductor laser light source according to the sixth embodiment has a photodiode 13.
- Photodiode 13 is present in addition to a longitudinal side surface
- the light-scattering portion 12 directs a portion 22 of the active
- Figure 7 shows a schematic cross section through a semiconductor laser light source according to a seventh
- the semiconductor laser light source according to the seventh exemplary embodiment has a semiconductor body 10 with a light scattering portion 12, which extends completely within the n-type layer 111 and has the shape of a straight prism with triangular base.
- the normal vectors N are parallel to the triangular base surface and to the decoupling surface 101, so that the prism extends along the waveguide web 114 and in plan view of the p-side outer surface preferably with this
- the light scattering portion 12 scatters a portion 22 of the
- Semiconductor layer stacks 110 generate electromagnetic radiation toward a longitudinal side surface 102A where it
- Such a prismatic light scattering portion 12 is particularly well suited for the irradiation of a longitudinally arranged photodiode 13.
- FIG. 8 shows a schematic cross section through a semiconductor laser light source according to FIG.
- the light-scattering portions 12A, 12B of the semiconductor body 10 of the semiconductor laser light source according to the eighth embodiment are analogous to those of the semiconductor ⁇ body 10 according to the fourth embodiment (see Figures 4A and 4B) is formed.
- the first light-diffusing portions 12A do not run in the course of the n-type layer 111 to the p-type layer 112 of the semiconductor layer stack 110 on the waveguide ridge 114, but away from it. They are laterally spaced from the waveguide ridge 114 and overlap in plan view on the p-side outer surface of the semiconductor body 10 with a photodiode 13, which is mounted laterally adjacent to the waveguide ridge 14 on the p-side outer surface 102B of the semiconductor body 10.
- the semiconductor body 10 also has second light-scattering subregions which are located completely within the n-conducting layer 110 and have main planes E extending obliquely to the vertical direction V and parallel to the normal vector N on the decoupling surface 101 (in FIG perpendicular to the paper plane).
- the second light-scattering subareas 12B also overlap in plan view onto the p-side outer surface 102B of the semiconductor body 10 with the photodiode 13 applied to this outer surface 102B. In this way, part 22 of the electromagnetic radiation generated by the active layer 112 becomes particularly efficient p-side outer surface 102 and in particular directed to the photodiode 13 out.
- FIG. 9 shows a schematic perspective illustration of a semiconductor laser light source according to a ninth
- the semiconductor laser light source according to this embodiment substantially corresponds to
- the longitudinal side surface 102A facing the photodiode 13 is light scattering structures 160 provided.
- a portion of the longitudinal side surface 102A overlapping the photodiode 13 in a plan view of the longitudinal side surface 102A is provided with the light diffusing structures 160, while a portion uncovered by the photodiode is free of the light scattering structures.
- the entire longitudinal side surface 102A may also be provided with the light-scattering structures.
- the light-scattering structures are macroscopic structures, in the present case structures being understood as "macroscopic structures" whose dimensions are at least in one dimension greater than 10 ⁇ m, preferably greater than 100 ⁇ m.
- structures may also be formed by a roughening, which is designed such that it is suitable for scattering electromagnetic radiation having a wavelength of an intensity maximum of the coherent component 21.
- a roughening which is designed such that it is suitable for scattering electromagnetic radiation having a wavelength of an intensity maximum of the coherent component 21.
- the roughening to structural units with lateral dimensions between 100 nm and 1 ⁇ , the limits are included.
- FIG. 10 shows a schematic cross section through a semiconductor laser light source according to a tenth
- Forming light-scattering portions 12 are bevelled.
- the oblique subareas of the longitudinal side surfaces 102A extend from the p-side outer surface 102B of the semiconductor body 10 in the vertical direction V beyond the active layer 112 into the n-conducting layer 111 inside.
- a part 22 of the electromagnetic radiation generated by the active layer 112 is directed in the direction of the n-side outer surface 102C of the semiconductor body.
- FIG. 11 shows a schematic plan view of a photodiode 13
- FIG. 14 shows a schematic cross section through the semiconductor laser light source of FIG. 11 in the sectional plane BB.
- This portion 1120 is contacted with the electrode 140, such as in connection with the third
- the active layer 112 is electrically separated from the portion 1120 by means of an insulator 170 and electrically contacted with another electrode 150.
- the passivation 130 applied to the p-side outer surface 102B extends as Isolator 170 in a along the waveguide ridge 114 in the semiconductor layer stack 110 formed trench, which cuts through the active layer 112, into it.
- the semiconductor body 10 comprises first light-scattering structural ⁇ structures 12A that are adapted to steer 112 generated electromagnetic radiation in the direction of the longitudinal side surfaces 102A of the part 1120 of the active layer, so that it particularly applies to the monolithically integrated photodiode. 13
- Second light-scattering portions 12B are formed in the n-type layer 111 and overlap in
- Waveguide ridge 114 over a majority of the length of the semiconductor body 10, for example, over 80% or more of the length of the semiconductor body 10th
- FIG. 12 shows a schematic plan view of one
- the semiconductor laser light source according to the present invention is a semiconductor laser light source.
- twelfth embodiment corresponds to that of the eleventh Embodiment, however, the photodiode 13 does not extend over a majority of the length of the semiconductor body 10, but it is in the vicinity of the decoupling surface 101st
- FIG. 13 shows a section of a longitudinal section running in the active layer 112 through the
- Semiconductor body 10 of a laser light source according to a
- the photodiode 13 has no rectangular or square geometry as in the eleventh or twelfth
- Embodiment but is shaped as an irregular polygon.
- the semiconductor laser light sources according to the first to fifth embodiments may also each have a photodiode 13, for example, disposed on a longitudinal side surface 102A, on the p-side outer surface 102B or the n-side outer surface 102C of the semiconductor body 10 or adjacent one of these surfaces.
- the semiconductor laser ⁇ light source having an electrical circuit
- Portions 12, 12A, 12B, 12C of each execution ⁇ examples are combinable with each other in a semiconductor body 10th
- the invention includes any novel feature as well as any combination of features, particularly any combination of features in the claims and any combination of features in the embodiments, even if these
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JP2015507481A JP6033406B2 (ja) | 2012-04-23 | 2013-04-19 | 端面放射型の半導体ボディを備えている半導体レーザ光源 |
US14/396,729 US9214785B2 (en) | 2012-04-23 | 2013-04-19 | Semiconductor laser light source having an edge-emitting semiconductor body |
US14/968,845 US9385507B2 (en) | 2012-04-23 | 2015-12-14 | Semiconductor laser light source having an edge-emitting semiconductor body |
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US14/396,729 A-371-Of-International US9214785B2 (en) | 2012-04-23 | 2013-04-19 | Semiconductor laser light source having an edge-emitting semiconductor body |
US14/968,845 Division US9385507B2 (en) | 2012-04-23 | 2015-12-14 | Semiconductor laser light source having an edge-emitting semiconductor body |
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JP6098175B2 (ja) * | 2013-01-15 | 2017-03-22 | 日亜化学工業株式会社 | 半導体レーザ素子 |
DE102014207893A1 (de) | 2014-04-28 | 2015-10-29 | Robert Bosch Gmbh | 3D-Laserscanner |
DE102014207899A1 (de) * | 2014-04-28 | 2015-10-29 | Robert Bosch Gmbh | 3D Fein-Laserscanner |
DE102016106495A1 (de) | 2016-04-08 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Halbleiterlaser |
CN111801610B (zh) * | 2018-02-19 | 2022-11-29 | 三菱电机株式会社 | 半导体光集成器件 |
JP7336377B2 (ja) * | 2019-12-12 | 2023-08-31 | シャープ福山レーザー株式会社 | 半導体レーザ素子 |
DE102022117503A1 (de) * | 2022-07-13 | 2024-01-18 | Ams-Osram International Gmbh | Optoelektronisches halbleiterbauelement |
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JPS5871676A (ja) * | 1981-10-23 | 1983-04-28 | Nec Corp | 埋め込みへテロ構造半導体レ−ザ・フオトダイオ−ド光集積化素子 |
JPS59128756A (ja) | 1983-01-14 | 1984-07-24 | Toshiba Corp | 表示素子用低圧水銀蒸気放電灯 |
JPS59128756U (ja) * | 1983-02-18 | 1984-08-30 | 三洋電機株式会社 | 半導体レ−ザ装置 |
JPH067623B2 (ja) * | 1984-11-09 | 1994-01-26 | 日本電気株式会社 | 光双安定集積素子 |
JP2744455B2 (ja) * | 1989-02-14 | 1998-04-28 | キヤノン株式会社 | 光増幅器および光デバイス |
US5252513A (en) * | 1990-03-28 | 1993-10-12 | Xerox Corporation | Method for forming a laser and light detector on a semiconductor substrate |
JP2507685B2 (ja) | 1990-07-25 | 1996-06-12 | 株式会社東芝 | 半導体レ―ザ |
DE10201102A1 (de) * | 2002-01-09 | 2003-07-24 | Infineon Technologies Ag | Laservorrichtung |
GB2387481B (en) * | 2002-04-10 | 2005-08-31 | Intense Photonics Ltd | Integrated active photonic device and photodetector |
JP4721924B2 (ja) * | 2005-12-09 | 2011-07-13 | 富士通株式会社 | 光導波路を伝搬する光と回折格子とを結合させた光素子 |
DE102006046297A1 (de) | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterlaser |
US8368919B2 (en) * | 2007-09-26 | 2013-02-05 | Xerox Corporation | Enhancements to job ticket handling during multiple job submission |
DE102007060204B4 (de) | 2007-09-28 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
DE102008013896A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Laserlichtquelle |
DE102008012859B4 (de) | 2007-12-21 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserlichtquelle mit einer Filterstruktur |
DE102008058435B4 (de) * | 2008-11-21 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Kantenemittierender Halbleiterlaser |
JP2010212347A (ja) * | 2009-03-09 | 2010-09-24 | Seiko Epson Corp | 受発光装置 |
DE102010015197A1 (de) | 2010-04-16 | 2012-01-19 | Osram Opto Semiconductors Gmbh | Laserlichtquelle |
DE102010043693A1 (de) * | 2010-09-29 | 2012-03-29 | Robert Bosch Gmbh | Halbleiterlaseranordnung und Verfahren zur Herstellung einer Halbleiterlaseranordnung |
DE102011111604B4 (de) | 2011-08-25 | 2023-01-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes Halbleiterbauelement |
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US20160099547A1 (en) | 2016-04-07 |
US9214785B2 (en) | 2015-12-15 |
US20150085889A1 (en) | 2015-03-26 |
DE102012103549B4 (de) | 2020-06-18 |
US9385507B2 (en) | 2016-07-05 |
JP2015518280A (ja) | 2015-06-25 |
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DE102012103549A1 (de) | 2013-10-24 |
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