WO2013156702A1 - Capteur tactile photosensible - Google Patents

Capteur tactile photosensible Download PDF

Info

Publication number
WO2013156702A1
WO2013156702A1 PCT/FR2013/050672 FR2013050672W WO2013156702A1 WO 2013156702 A1 WO2013156702 A1 WO 2013156702A1 FR 2013050672 W FR2013050672 W FR 2013050672W WO 2013156702 A1 WO2013156702 A1 WO 2013156702A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
piezoresistive
touch sensor
photosensitive layer
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2013/050672
Other languages
English (en)
French (fr)
Inventor
Abdelkader Aliane
Mohammed Benwadih
Tiphaine CARD
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to KR1020147027051A priority Critical patent/KR20140146594A/ko
Priority to JP2015506279A priority patent/JP6125611B2/ja
Priority to US14/388,536 priority patent/US9228908B2/en
Priority to EP13719938.6A priority patent/EP2839361B1/fr
Publication of WO2013156702A1 publication Critical patent/WO2013156702A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/02Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/58Photometry, e.g. photographic exposure meter using luminescence generated by light
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/16Measuring force or stress, in general using properties of piezoelectric devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/96Touch switches
    • H03K17/9627Optical touch switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/96Touch switches
    • H03K17/964Piezoelectric touch switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/94Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated
    • H03K2217/941Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated using an optical detector
    • H03K2217/94102Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00 characterised by the way in which the control signal is generated using an optical detector characterised by the type of activation
    • H03K2217/94106Passive activation of light sensor, e.g. by ambient light

Definitions

  • the invention relates to the field of tactile sensors, especially tactile sensors by pressure detection, and is particularly applicable in screens, keyboards, and touch pads.
  • piezoelectric materials are usually sought which have both good mechanical properties and good piezoelectric qualities.
  • piezoelectric materials have either good mechanical properties or good piezoelectric properties.
  • piezoelectric materials commonly used for pressure sensors there are ceramics called “PZT” (acronym for lead titano-zirconate) and “PVDF” (acronym for polyvinylfluoride).
  • PZT acronym for lead titano-zirconate
  • PVDF acronym for polyvinylfluoride
  • a PZT ceramic is certainly provided with a high piezoelectric constant, but nevertheless has a very high Young's modulus, and therefore insufficient mechanical properties.
  • PVD has a low Young's modulus, and more generally good mechanical properties, but nevertheless has a low piezoelectric constant.
  • piezoelectric materials having good mechanical strength, and therefore a low Young's modulus, are usually preferred.
  • an electrical assembly called “capacity” is used to measure the amount of charges released.
  • the layer of piezoelectric material is in contact with electrodes and forms with them a capacitive circuit, the capacity of which varies as a function of the electric charges released.
  • a capacimeter connected to the electrodes, measures the capacitance of the capacitive circuit dynamically, in particular by imposing a variable voltage between the electrodes and / or by injecting into them a variable current of variable frequency.
  • An electrical capacitance arrangement therefore requires complex measuring means.
  • the object of the present invention is to provide a piezoresistive tactile sensor of increased sensitivity, not requiring the use of an electrical circuit in capacity to measure the presence of an object on its surface.
  • the subject of the invention is a tactile sensor comprising:
  • a piezoresistive layer whose electrical resistance varies as a function of mechanical stresses exerted thereon, the piezoresistive layer being at least partially transparent to light;
  • the touch sensor according to the invention combines two different physical phenomena and concomitant to detect the presence of an object on its surface. Indeed, when an object, for example a finger, approaches the sensor, it hides the ambient brightness, and thus causes a variation in brightness detected by the sensor.
  • a high variation of the electric resistance of the assembly is thus obtained when a finger presses the sensor and mask the light.
  • Such a variation can in particular be measured statically, for example by applying a constant electric current of known value in the sensor and by measuring the resulting voltage across the latter. The variation of the voltage beyond a predetermined threshold then makes it possible to characterize the pressure exerted on the sensor.
  • the piezoresistive layer and the photosensitive layer are separated by a more deformable medium than the piezoresistive layer, in particular by a fluid or viscous liquid, a gas such as air for example, a gas under a reduced pressure, vacuum, etc., which allows a large deformation of the piezoresistive layer, and therefore a large variation in its electrical resistance.
  • the piezoresistive layer is arranged on one side of an electrically insulating protective layer, at least partially transparent to light and deformable, and in which the stack formed of the piezoresistive layer and the protective layer has openings arranged in line with the photosensitive layer. The sensitivity of the sensor to changes in ambient light is thus increased substantially by the presence of the openings.
  • the piezoresistive layer is made in the form of a coil having a variable number of turns per unit area, and in particular a greater number of turns in a central zone of the sensor than the number of turns in peripheral areas of the sensor.
  • a coil has a width much smaller than its length. A deformation of the coil thus induces a high variation of its electrical resistance.
  • the number of turns per unit area provides a variable sensitivity of the sensor on its surface, including a greater sensitivity in a central area thereof.
  • the coil travels between openings formed in the protective layer, in particular between rows of openings.
  • the piezoresistive layer is made of PEDOT: PSS.
  • PEDOT: PSS is a mixture of poly (3,4-ethylenedioxythiophene), or "PEDOT", and poly (styrene sulfonate).
  • the PEDOT: PSS is a piezoresistive material, whose electrical resistance varies significantly depending on the constraints applied to it.
  • the PEDOT: PSS also has the advantage of being transparent to visible and near infrared radiation.
  • the photosensitive layer comprises a mixture of graphene and antimony-doped tin dioxide, or "ATO".
  • ATO antimony-doped tin dioxide
  • This material has the dual advantage of being sensitive to a broad spectrum of radiation, especially the red wavelength of the visible spectrum and the near-infrared spectrum, and of having an electrical resistance which decreases with the amount of radiation collected.
  • a finger which emits a large amount of infrared radiation, is detected by the photosensitive layer even if the ambient visible light is very low.
  • the piezoresistive materials generally exhibit an electrical resistance which increases when stressed. By connecting in parallel an electrical resistance which increases by the presence of an object and an electrical resistance which decreases due to this same presence, a strong variation of the electrical resistance of the assembly is obtained, and thus a very large sensor. sensitivity.
  • the proportion by weight of the doped tin dioxide in the mixture is greater than 20%. It has thus been noted that this proportion allows optimal collection of radiation. For lower percentages, it is observed that the detection sensitivity decreases.
  • the photosensitive layer is formed between the piezoresistive layer and a light reflecting layer.
  • the reflective layer makes it possible to send back to the light-sensitive layer the radiation that has passed through it, for example because of a small thickness of this layer. In this way, the sensitivity of the sensor is increased.
  • the reflective layer is able to reflect wavelengths in the visible and near-infrared range.
  • the photosensitive layer is separated from the reflective layer ⁇
  • the piezoresistive layer and the photosensitive layer are transferred to one another by means of metal balls connecting them electrically in parallel.
  • the balls make it possible to adjust the distance separating them, in particular to focus the incident light on the photosensitive layer.
  • the piezoresistive layer and the photosensitive layer are transferred to one another by means of stacks of at least two conductive balls secured to one another by an insert. In this way, it is possible to adjust the distance between the piezoresistive layer and the photosensitive layer by adjusting the number of stacked beads.
  • FIG. 1 is a schematic sectional view of a sensor according to the invention.
  • Figure 2 is a schematic top view of the Figure 1 sensor
  • FIG. 3 is a schematic top view of a variant of the Figure 2 sensor
  • FIG. 4 is an equivalent electrical diagram of the sensor according to the invention.
  • FIGS. 5 to 16 are schematic views illustrating a manufacturing process of a sensor according to the invention.
  • FIG. 17 is a schematic sectional view of a ball variant for hybridization of two parts of the sensor according to the invention.
  • a touch sensor 10 for example intended to be incorporated in a screen, a keyboard, or a touchpad, comprises a pressure sensor 12 and a sensor 14. The latter is disposed under the pressure sensor 12 and the right thereof, the two sensors 12, 14 being electrically connected in parallel.
  • the pressure sensor 12 comprises a piezoresistive layer 16, made of a piezoelectric material, whose electrical resistance varies as a function of the mechanical stresses that this material undergoes, sandwiched between protective layers, in particular a flexible substrate 18 defining a tactile surface, and an electrically insulating protective layer 20.
  • the piezoresistive layer 16 is advantageously made of PEDOT: PSS, for example with a thickness of between 10 nm and 5 ⁇ m.
  • the PEDOT: PSS is a piezoresistive material, that is to say a material whose electrical resistance varies greatly with the stresses it undergoes compared to other types of known piezoresistive materials.
  • the PEDOT: PSS is also sensitive to temperature, and its electrical resistance decreases with increasing temperature. In addition, this material is substantially transparent to visible radiation and near infrared.
  • the conductive elements 22 comprise two sets of metal tracks 24 in contact with the layer 16 and respectively connected to two metal areas 26.
  • the flexible substrate 18 is chosen to be deformable under the pressure exerted by an object on its surface, for example by a finger 28 or a stylus.
  • the flexible substrate 18 is for example made of a thin plastic layer with a thickness between 25 ⁇ and 200 ⁇ .
  • the pressure sensor 12 is also designed at least partially transparent to the radiation detected by the light sensor 14. The transparency is obtained by the choice of the constituent materials of the sensor 12, and / or the thickness of the constituent layers of that and / or by arranging in the sensor preferred passages for the light, for example openings.
  • the substrate 18 is made of a material at least partially transparent to visible light.
  • the substrate 18 is made of polyethylene naphthalate (“PEN”) or poly (ethylene terephthalate) (“PET”), which has the triple advantage of being flexible, transparent to the visible spectrum and the near infrared, and to be inexpensive ..
  • PEN polyethylene naphthalate
  • PET poly (ethylene terephthalate)
  • the protective layer 20 is preferably produced in a dielectric material which is at least partially transparent to the radiation detected by the sensor 14.
  • the layer 20 is a CYTOP-type fluoropolymer layer, which is transparent and has a low permittivity, with a thickness of between 10 nanometers and 500 nanometers.
  • Openings 30 are also made through the pressure sensor 12, and to the right of the light sensor 14, to increase the overall transparency of the sensor 12.
  • a two-dimensional network, in particular a periodic network, of openings is made through the substrate 18, the piezoresistive layer 16, and the protective layer 20.
  • the openings are, for example, of square and side cross-section between 50 nanometers and 5 micrometers.
  • the piezoresistive layer 16 is made in the form of a solid rectangular layer traversed by the openings 30.
  • the piezoresistive layer 20 alternatively takes the form of a serpentine running between rows of openings 30.
  • a coil has a length much greater than its width, so that it is obtained an increased variation of its electrical resistance as a function of the pressure exerted on its surface.
  • the coil has more turns in a central zone of the pressure sensor 12 than at the periphery thereof. In this way, the pressure sensor is more sensitive on this central zone than on its periphery due to the low resonance frequency which gives a maximum of stress to the center of the piezoresistive structure.
  • the light sensor 14 comprises a substrate 32 on which a reflective layer 34 rests.
  • the layer 34 is covered with a layer 36 of electrically insulating material and at least partially transparent to the radiation detected by the light sensor 14.
  • the latter also comprises a photosensitive layer 38 formed on the insulating layer 36.
  • Conductive elements 40 for example made of gold, platinum, nickel, copper, silver or aluminum , are furthermore made on the insulating layer 36 in contact with the photosensitive layer 38 in order to subject the latter to a voltage and / or to inject an electric current into it, as will be explained in more detail below.
  • the conductive elements 40 comprise two sets of metal tracks 42 in contact with the layer 38 and connected to two metal plates 44.
  • the assembly is optionally covered with an electrically insulating protective layer 48, except for the conductive pads 44 which remain open, and openings 50 are made in the layer 48 to the right of the openings 30 of the pressure sensor 12.
  • the substrate 32 is advantageously a flexible and transparent substrate, for example a plastic substrate, such as PEN or PET, with a thickness of between 25 ⁇ m and 200 ⁇ m.
  • the photosensitive layer 38 is advantageously constituted by a mixture of graphene and ATO (antimony doped tin dioxide (SnO2: Sb)), the proportion by weight of ATO in the mixture is advantageously greater than 20%.
  • ATO antimony doped tin dioxide
  • Such a material is capable of capturing in the visible spectrum (especially in the red) as well as in the near infrared and furthermore has an electrical resistance which decreases as a function of the amount of radiation captured.
  • the photosensitive layer 38 thus captures the ambient light variations induced by the presence of the finger 28, as well as the heat variations induced by the presence of the finger 28, these heat variations resulting in variations of the near-infrared radiation emitted by the finger .
  • the material of the insulating layer 36 as well as the distance separating the photosensitive layer 38 from the reflective layer 34 are chosen from ⁇ .
  • the reflecting layer 34 is made of a material having a significant reflection of the radiation detected by the photosensitive layer 38.
  • the reflective layer is a metallic layer of silver, aluminum or gold, these materials having a high reflectivity in the field visible and near infrared.
  • the insulating layer 36 is made of a material transparent to the radiation detected by the photosensitive layer 38, for example an organic polymer type dielectric or an inorganic oxide such as Si0 2 , Zr0 2 , Ti0 2 , etc. . These materials have a high transparency in the visible and near infrared range.
  • the pressure sensor 12 and the light sensor 14 are advantageously carried on one another by means of metal balls 52, each disposed between connection pads 26, 44 disposed facing the sensors 12, 14 respectively.
  • the sensors 12 and 14 are therefore electrically connected in parallel.
  • the balls 52 spacing them a distance di allowing the pressure sensor 12 to bend strongly under the pressure exerted on its surface, and therefore to undergo a large variation in its electrical resistance.
  • the space separating the pressure sensor 12 and the light sensor 14 is for example filled by a gas, such as air, under reduced pressure or not, vacuum, a fluid or viscous liquid, etc. Of course. these two functions can be implemented by separate elements.
  • FIG. 4 is an equivalent electrical diagram of the sensor according to the invention.
  • the piezoresistive 16 and photosensitive layers 38 being electrically connected in parallel, the
  • the sensor 10 is for example connected to an electric circuit 54 comprising a source of current or constant voltage making it possible to measure the resistance of the resistor or of an electrical quantity connected thereto, this measurement being analyzed by a circuit of analog or digital processing (not shown) to determine an event on the surface of the sensor, such as the presence of a finger for example.
  • the sensor 10 according to the invention thus combines three different detection modes, namely a piezoresistive tactile detection mode, a light detection mode, and a detection mode combining the tactile and light detection mode.
  • the piezoresistive detection mode the pressure exerted on the substrate 18 induces a piezoresistive effect, namely the variation of the electrical resistance of the piezoresistive layer 16 under the effect of the stress which it undergoes.
  • the fact of pressing on the substrate 18 causes a local deformation of the piezoresistive layer 16, which causes a variation in its electrical resistance, a variation which results in a corresponding variation of an electrical quantity, in particular a current or a electric tension.
  • the pressure exerted is then determined using, for example, a table of values of predetermined variations of the measured electrical quantity as a function of pressure values exerted.
  • the light detection mode when a face, or both faces of the sensor 10 are illuminated, the electrical resistance of the photoresistor formed of the photosensitive layer 38 varies as a function of the light intensity, and the variation of this resistance is translated into an electrical magnitude, current or voltage, which is read by a read circuit in a manner similar to that described above.
  • the light detection mode can also detect thermal waves in the near infrared, and thus allows the detection of a finger when the ambient light in the visible spectrum is of low intensity. It will also be noted that the materials and layers constituting the light sensor 14 allow detection of an incident light on the substrate 32, hence the possibility of detection only light if the application requires it.
  • an object exerting a pressure on the surface of the pressure sensor 12 also masks the ambient luminosity and thus causes a light variation sensed by the light sensor 14.
  • the object is a finger
  • thermal waves in the near infrared can be further detected by the latter. The combination of these phenomena generates a large variation in the overall electrical resistance of the sensor, allowing a high sensitivity detection.
  • the manufacture of the light sensor 14 begins with the production of a substrate 32 made of a flexible plastic bat cost of the PEN or PET type and with a thickness of between 25 and 200 micrometers, and continues with the deposition of a reflective metal layer. 34, for example silver, aluminum or gold, by means of a physical vapor deposition, a screen printing or an inkjet printing ( Figure 5).
  • An electrically insulating and transparent layer 36 is then deposited, for example by means of a physical vapor deposition, a screen printing or an inkjet printing, on the assembly obtained.
  • the thickness of the layer 36 is chosen so as to maximize the reflection of the light flux on the photosensitive element, which will subsequently be deposited (FIG. 6).
  • the constituent material of the layer 36 is, for example, an organic polymer type dielectric or an inorganic passivation oxide such as SiO 2 , ZrO 2 , TiO 2 or the like.
  • Two connection electrodes 40 are then made on the layer 36 by means of a physical vapor deposition, a screen printing or an inkjet printing (FIG. 7).
  • the electrodes 40 are for example made of conductive graphene or a metal, especially gold, silver, aluminum, platinum, copper, or titanium.
  • the process is continued by the deposition of the photosensitive layer 38 consisting of a mixture of graphene and ATO with a minimum of 20% by weight of ATO (FIG. 8).
  • the deposition is carried out for example by means of a screen printing or an inkjet printing depositing a mixture of a conductive graphene ink and an ATO ink.
  • the solvents of the graphene ink and the ATO ink advantageously have an evaporation temperature close to each other to form a very uniform deposited layer.
  • the evaporation temperatures of the solvents are also advantageously chosen, compatible in terms of annealing, with a annealing temperature of the layers already formed during the deposition of the ink mixture, and in particular the evaporation temperatures below the glass transition temperature. of the plastic substrate 32.
  • the evaporation temperatures are between 110 and 180 ° C.
  • a dielectric layer 48 is then deposited on the assembly, for example by means of a physical vapor deposition, a screen printing or an inkjet printing, and openings 50 are made in the layer 48. to the photoresist layer 38 (FIGS. 9 and 10).
  • the openings are for example made by means of screen printing or lithography.
  • the manufacture of the pressure sensor 12 begins with the realization of a substrate 18 made of flexible plastic bat cost type PEN or PET, a thickness of between 25 and 200 micrometers, and continues with the realization of two electrodes 22, in particular by means of a full-plate deposit, for example a physical vapor deposition or by screen printing or by ink-jet printing, followed by a chemical, physical or laser etching, in order to define the electrodes 22 ( Figure 11).
  • the electrodes 22 consist for example of conductive graphene or a metal, especially gold, silver, aluminum, platinum, copper, or titanium.
  • the process continues with the deposition and definition of the geometry of the piezoresistive material.
  • the geometric shape of the piezoresistive layer 16 is advantageously chosen to increase the sensitivity of the pressure sensor 12 in the center thereof by defining the serpentine pattern with tight turns in the center of the sensor (FIG. 12).
  • the layer 20 is for example deposited by screen printing or by inkjet printing, and more generally by means of a low temperature deposition compatible with the plastic substrate 18.
  • An annealing is then applied to stiffen the layer 20.
  • Openings 30 are then produced in the substrate 18, for example by means of a laser etching, a plasma etching, or a chemical etching, through a lithography mask ( Figure 14).
  • the dimensions of the openings 30 in the thickness of the substrate 18, and therefore through the pressure sensor 12, are advantageously optimized to have a maximum of light transfer to the light sensor 14. In particular, the dimensions of the openings are chosen to limit or avoid diffraction phenomena by the layers forming the pressure sensor 12 for the wavelengths detected by the light sensor 14.
  • the pressure and light sensors 12 and 14 are preferably assembled using a conductive ink, for example based on silver.
  • a conductive ink of the epoxy or other type comprising silver is deposited on each of the connection pads 44 of the light sensor 12, for example by screen printing or by means of a micro-syringe.
  • the ink volume and the deposition conditions thereof make it possible to adjust the distance di separating the pressure sensor 12 from the light sensor 14 (FIG. 16).
  • Light annealing is then performed to solidify the surface of the ink drops and then the pressure sensor 12 is then transferred to the conductive balls 52.
  • a final annealing is then applied to solidify all the conductive balls.
  • a first drop of conductive ink 52 is deposited on each connection pad 44, then a superficial annealing of the drops is applied to solidify their upper surfaces.
  • a rigid metal insert 60, conductive, and having high adhesion properties with the conductive ink, is then inserted into each of the drops to mechanically support the structure of the final sensor and to prevent fatigue thereof following multiple tactile touch that it will undergo.
  • the inserts 60 are rods of conductive carbon nanotubes, tungsten, nickel, titanium nitride, or tungsten nitride.
  • a second drop 62 is then deposited on each of the first drops 52, and annealing is applied to stiffen the assembly.
  • Other types of transfer are of course possible, the transfer by means of a conductive ink having the advantage of not requiring temperatures incompatible with the plastic materials present in the sensor.
  • photosensitive layer consisting of a mixture of graphene and ATO has been described.
  • Other photosensitive materials are also possible.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
PCT/FR2013/050672 2012-04-20 2013-03-28 Capteur tactile photosensible Ceased WO2013156702A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020147027051A KR20140146594A (ko) 2012-04-20 2013-03-28 감광 촉각 센서
JP2015506279A JP6125611B2 (ja) 2012-04-20 2013-03-28 感光性触覚センサ
US14/388,536 US9228908B2 (en) 2012-04-20 2013-03-28 Photosensitive tactile sensor
EP13719938.6A EP2839361B1 (fr) 2012-04-20 2013-03-28 Capteur tactile photosensible

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1253649A FR2989829B1 (fr) 2012-04-20 2012-04-20 Capteur tactile photosensible
FR1253649 2012-04-20

Publications (1)

Publication Number Publication Date
WO2013156702A1 true WO2013156702A1 (fr) 2013-10-24

Family

ID=48237092

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2013/050672 Ceased WO2013156702A1 (fr) 2012-04-20 2013-03-28 Capteur tactile photosensible

Country Status (6)

Country Link
US (1) US9228908B2 (enExample)
EP (1) EP2839361B1 (enExample)
JP (1) JP6125611B2 (enExample)
KR (1) KR20140146594A (enExample)
FR (1) FR2989829B1 (enExample)
WO (1) WO2013156702A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3048562A1 (fr) * 2015-01-23 2016-07-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d'acquisition d'une image caractéristique d'un corps
CN106445239A (zh) * 2016-10-31 2017-02-22 厦门天马微电子有限公司 一种触控显示装置、触控显示面板及其压力检测方法
CN108871592A (zh) * 2018-05-08 2018-11-23 电子科技大学 一种低压电及温度干扰的柔性热释电红外热像仪像素阵列

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2989677B1 (fr) * 2012-04-20 2015-06-19 Commissariat Energie Atomique Materiau photosensible et thermoresistant, procede de preparation et utilisation
US10416031B2 (en) * 2015-09-25 2019-09-17 MedicusTek, Inc. Pressure sensing device
KR102381652B1 (ko) * 2015-09-30 2022-04-04 삼성디스플레이 주식회사 표시장치
CN106059557A (zh) * 2016-06-01 2016-10-26 郭利民 一种采用光敏元件的键及使用该键的键盘
US11054932B2 (en) * 2017-09-06 2021-07-06 Apple Inc. Electronic device having a touch sensor, force sensor, and haptic actuator in an integrated module
US11552240B2 (en) * 2017-10-24 2023-01-10 Purdue Research Foundation Machines and processes for producing polymer films and films produced thereby
US10794786B2 (en) 2018-09-24 2020-10-06 Honeywell International Inc. Miniature size force sensor with bubble detection capabilities
US10966007B1 (en) 2018-09-25 2021-03-30 Apple Inc. Haptic output system
US11024135B1 (en) 2020-06-17 2021-06-01 Apple Inc. Portable electronic device having a haptic button assembly

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6522032B1 (en) * 1999-05-07 2003-02-18 Easter-Owen Electric Company Electrical switch and method of generating an electrical switch output signal

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06332607A (ja) * 1993-05-19 1994-12-02 Mitsubishi Electric Corp 表示一体型入力装置
JPH10249768A (ja) * 1997-03-12 1998-09-22 Tokai Rubber Ind Ltd 力センサー
KR100846305B1 (ko) * 2000-08-31 2008-07-16 가부시키가이샤 도쿄다이가쿠 티엘오 광학식 촉각센서
JP2004127073A (ja) * 2002-10-04 2004-04-22 Smk Corp 指示入力装置
JP2004139162A (ja) * 2002-10-15 2004-05-13 Fujitsu Component Ltd タッチパネルの製造方法と、該製造方法で製造されるタッチパネル
JP2006013407A (ja) * 2004-05-21 2006-01-12 Sanyo Electric Co Ltd 光量検出回路およびそれを用いた表示パネル
JP2006048548A (ja) * 2004-08-06 2006-02-16 Citizen Seimitsu Co Ltd タッチパネル
KR101365491B1 (ko) * 2006-11-17 2014-02-24 삼성디스플레이 주식회사 디스플레이장치
JP4450089B2 (ja) * 2007-10-12 2010-04-14 エプソンイメージングデバイス株式会社 タッチパネル及び電気光学装置
WO2009055767A2 (en) * 2007-10-26 2009-04-30 Trs Technologies, Inc. Micromachined piezoelectric ultrasound transducer arrays
JP5399799B2 (ja) * 2008-07-17 2014-01-29 三星ディスプレイ株式會社 ディスプレイ装置
US20100123686A1 (en) * 2008-11-19 2010-05-20 Sony Ericsson Mobile Communications Ab Piezoresistive force sensor integrated in a display
TWI376624B (en) * 2008-12-23 2012-11-11 Integrated Digital Tech Inc Force-sensing modules for light sensitive screens
JP5100670B2 (ja) * 2009-01-21 2012-12-19 株式会社半導体エネルギー研究所 タッチパネル、電子機器
AT508438B1 (de) * 2009-04-16 2013-10-15 Isiqiri Interface Tech Gmbh Anzeigefläche und eine damit kombinierte steuervorrichtung für eine datenverarbeitungsanlage
US8981213B1 (en) * 2009-05-20 2015-03-17 Joseph A. Micallef Piezoelectric ultracapacitive photovoltaic cell
TW201203052A (en) * 2010-05-03 2012-01-16 Flatfrog Lab Ab Touch determination by tomographic reconstruction
KR20130109090A (ko) * 2010-06-11 2013-10-07 쓰리엠 이노베이티브 프로퍼티즈 컴파니 힘 측정을 갖는 포지셔널 터치 센서
US9417141B2 (en) * 2011-09-16 2016-08-16 Sony Corporation Force sensitive touch sensor
TW201317839A (zh) * 2011-10-25 2013-05-01 Au Optronics Corp 觸控筆、觸控顯示系統以及觸控顯示方法
US9823781B2 (en) * 2011-12-06 2017-11-21 Nri R&D Patent Licensing, Llc Heterogeneous tactile sensing via multiple sensor types
WO2013105516A1 (ja) * 2012-01-13 2013-07-18 京セラ株式会社 電子機器及び電子機器の制御方法
WO2013115770A1 (en) * 2012-01-30 2013-08-08 Empire Technology Development Llc Systems, materials, and methods for a mechanical stress activated interface using piezo-optical components

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6522032B1 (en) * 1999-05-07 2003-02-18 Easter-Owen Electric Company Electrical switch and method of generating an electrical switch output signal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3048562A1 (fr) * 2015-01-23 2016-07-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d'acquisition d'une image caractéristique d'un corps
FR3032042A1 (fr) * 2015-01-23 2016-07-29 Commissariat Energie Atomique Dispositif d'acquisition d'une image caracteristique d'un corps
CN106445239A (zh) * 2016-10-31 2017-02-22 厦门天马微电子有限公司 一种触控显示装置、触控显示面板及其压力检测方法
CN106445239B (zh) * 2016-10-31 2019-11-12 厦门天马微电子有限公司 一种触控显示装置、触控显示面板及其压力检测方法
CN108871592A (zh) * 2018-05-08 2018-11-23 电子科技大学 一种低压电及温度干扰的柔性热释电红外热像仪像素阵列

Also Published As

Publication number Publication date
EP2839361B1 (fr) 2016-03-23
EP2839361A1 (fr) 2015-02-25
KR20140146594A (ko) 2014-12-26
US20150049330A1 (en) 2015-02-19
JP2015515067A (ja) 2015-05-21
JP6125611B2 (ja) 2017-05-10
US9228908B2 (en) 2016-01-05
FR2989829A1 (fr) 2013-10-25
FR2989829B1 (fr) 2014-04-11

Similar Documents

Publication Publication Date Title
EP2839361B1 (fr) Capteur tactile photosensible
EP2385486B1 (fr) Transducteur de variation temporelle de température,puce électronique incorporant ce transducteur et procédé de fabrication de cette puce
EP2836896B1 (fr) Capteur tactile et procede de fabrication d'un tel capteur
EP2602598B1 (fr) Détecteur bolométrique d'un rayonnement électromagnetique dans le domaine du térahertz et dispositif de détection matriciel comportant de tels détecteurs
EP2836895B1 (fr) Dispositif d'interface utilisateur a electrodes transparentes
FR2979991A1 (fr) Capteur de pression piezoelectrique
EP2800957B1 (fr) Capteur de temperature capacitif comprenant deux condensateurs en pont diviseur de tension
WO2004092940A2 (fr) Dispositif de détection de position
EP1715315A1 (fr) Détecteur bolométrique, dispositif de détection d'ondes électromagnétiques submillimétriques et millimétriques mettant en oeuvre un tel détecteur
EP3775817A1 (fr) Capteur et écran tactile à compensation environnementale, notamment en température
EP2019301B1 (fr) Détecteur de rayonnement électromagnétique et procédé de fabrication d'un tel détecteur
EP3483787A1 (fr) Procédé de réalisation d'un empilement de couches pour un capteur thermique matriciel
EP3435285B1 (fr) Capteur thermique avec deux portions pyroélectriques superposées, pour la mesure d'un différentiel de charges
WO2023111344A1 (fr) Microcapteur à électrodes interdigitées
EP3640615B1 (fr) Capteur pyroelectrique avec revêtement amélioré de résistance contre l'abrasion
WO2012069771A1 (fr) Capteur tactile et procédé de fabrication associe
FR3034248A1 (fr) Dispositif a resistance thermosensible
EP2385485B1 (fr) Procédé de calibration d'une puce électronique et détecteur de motif thermique pour ce procédé
EP3502638A1 (fr) Capteur pyroelectrique avec blindage électro-magnétique comprenant un matériau composite
EP3757735B1 (fr) Dispositif a surface tactile
FR3075953A1 (fr) Capteur pyroelectrique avec blindage electro-magnetique ameliore.
FR3151735A1 (fr) Dispositif rectificateur à diode couplée à une antenne
EP3846209A1 (fr) Composant de détection incluant des pixels noirs et procédé de fabrication d'un tel composant
FR3087006A1 (fr) Dispositif de detection pyroelectrique a membrane suspendue
WO2018042115A1 (fr) Capteur de motifs thermiques par imagerie infrarouge d'une matrice d'éléments chauffants.

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13719938

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2015506279

Country of ref document: JP

Kind code of ref document: A

Ref document number: 20147027051

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 14388536

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2013719938

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE